JP5150138B2 - 表示装置の製造方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
前記樹脂材層の主表面側に表示回路を構成する複数の積層材料層を形成する工程と、
前記複数の積層材料層の表面に偏光板を形成する工程と、
前記偏光板の表面に配向膜を形成する工程と、
前記ガラス基板の前記積層材料層が形成された面と反対側の面から光を照射させ前記樹脂材層と前記ガラス基板の界面における剥離を生じさせる工程とを有し、
前記ガラス基板が取り除かれた前記樹脂材層を前記表示回路が形成された基板として用いることを特徴とする。
前記第2樹脂材層の主表面側に複数の積層材料層からなる表示回路を形成する工程と、
前記ガラス基板の前記表示回路が形成された面と反対側の面から光を照射させ前記第1樹脂材層と前記第2樹脂材層の界面あるいは第1樹脂材層中における剥離を生じさせる工程とを有し、
前記第1樹脂材層が被着された前記ガラス基板が取り除かれた前記第2樹脂材層を前記表示回路が形成された基板として用いることを特徴とする。
前記樹脂材層の主表面側に複数の積層材料層からなる表示回路を形成する工程と、
前記ガラス基板の前記表示回路が形成された面と反対側の面から光あるいはレーザを照射させ前記樹脂材層と前記導電膜の界面における剥離を生じさせる工程とを有し、
前記導電膜が被着された前記ガラス基板が取り除かれた前記樹脂材層を前記表示回路が形成された基板として用いることを特徴とする。
図1は、本発明による表示装置の製造方法の一実施例を示す工程図である。この実施例における表示装置はアクティブ・マトリックス型の液晶表示装置を対象とし、図1は液晶を介して対向配置される一対の基板SUB1、SUB2のうち各画素に薄膜トランジスタを備える側の基板SUB1の製造方法を示している。
図6は、本発明による表示装置の製造方法の他の実施例を示す工程図で、図1と対応させて描いている。
図7は、本発明による表示装置の製造方法の他の実施例を示す工程図で、図6と対向させて描いている。
上述した実施例では液晶表示装置を例に挙げて本発明を説明したものである。しかし、これに限定されることはなく、たとえば有機EL(Electro Luminescence)表示装置等の他の表示装置にも本発明を適用することができる。
Claims (9)
- ガラス基板の主表面に塗布した樹脂を硬化させることによって樹脂材層を形成する工程と、
前記樹脂材層の主表面側に表示回路を構成する複数の積層材料層を形成する工程と、
前記複数の積層材料層の表面に偏光板を形成する工程と、
前記偏光板の表面に配向膜を形成する工程と、
前記ガラス基板の前記積層材料層が形成された面と反対側の面から光を照射させ前記樹脂材層と前記ガラス基板の界面における剥離を生じさせる工程とを有し、
前記ガラス基板が取り除かれた前記樹脂材層を前記表示回路が形成された基板として用いることを特徴とする表示装置の製造方法。 - 前記樹脂材層は主鎖中にイミド環構造を有する材料から構成されていることを特徴とする請求項1に記載の表示装置の製造方法。
- 前記樹脂材層の主表面側に形成する前記表示回路は、前記樹脂材層側からの水あるいは酸素の侵入を回避させるバリア層を介在させて形成することを特徴とする請求項1に記載の表示装置の製造方法。
- 前記バリア層は、酸窒化シリコン膜、酸化シリコン膜、窒化シリコン膜、ポリシリラザン膜、有機材料膜のうちのいずれか、あるいはそれらのいくつかの積層体から構成されていることを特徴とする請求項3に記載の表示装置の製造方法。
- 前記表示回路は薄膜トランジスタを備えた回路であることを特徴とする請求項1に記載の表示装置の製造方法。
- ガラス基板の主表面に塗布した樹脂を硬化させることによって第1樹脂材層および該第1樹脂材層よりも光透過率の大きな第2樹脂材層を順次形成する工程と、
前記第2樹脂材層の主表面側に複数の積層材料層からなる表示回路を形成する工程と、
前記複数の積層材料層の表面に偏光板を形成する工程と、
前記偏光板の表面に配向膜を形成する工程と、
前記ガラス基板の前記表示回路が形成された面と反対側の面から光を照射させ前記第1樹脂材層と前記第2樹脂材層の界面あるいは第1樹脂材層中における剥離を生じさせる工程とを有し、
前記第1樹脂材層が被着された前記ガラス基板が取り除かれた前記第2樹脂材層を前記表示回路が形成された基板として用いる
ことを特徴とする表示装置の製造方法。 - 前記第1樹脂材層および第2樹脂材層のうち少なくとも一方は、主鎖中にイミド環構造を有する材料から構成されていることを特徴とする請求項6に記載の表示装置の製造方法。
- ガラス基板の主表面に導電膜および塗布した樹脂を硬化させることによって樹脂材層を順次形成する工程と、
前記樹脂材層の主表面側に複数の積層材料層からなる表示回路を形成する工程と、
前記複数の積層材料層の表面に偏光板を形成する工程と、
前記偏光板の表面に配向膜を形成する工程と、
前記ガラス基板の前記表示回路が形成された面と反対側の面から光あるいはレーザを照射させ前記樹脂材層と前記導電膜の界面における剥離を生じさせる工程とを有し、
前記導電膜が被着された前記ガラス基板が取り除かれた前記樹脂材層を前記表示回路が形成された基板として用いる
ことを特徴とする表示装置の製造方法。 - 前記導電膜は、ZnO、SnO、WOx、MoOx、GeOx、Ge、SiGeのうちのいずれか、あるいはそれらのいくつかの積層体で構成されていることを特徴とする請求項8に記載の表示装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2007136139A JP5150138B2 (ja) | 2007-05-23 | 2007-05-23 | 表示装置の製造方法 |
TW097118732A TW200915250A (en) | 2007-05-23 | 2008-05-21 | Method of manufacturing display device |
US12/153,568 US20080292786A1 (en) | 2007-05-23 | 2008-05-21 | Method of manufacturing display device |
KR1020080047647A KR100994870B1 (ko) | 2007-05-23 | 2008-05-22 | 표시 장치의 제조 방법 |
CNA2008101090480A CN101311789A (zh) | 2007-05-23 | 2008-05-23 | 显示装置的制造方法 |
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JP2007136139A JP5150138B2 (ja) | 2007-05-23 | 2007-05-23 | 表示装置の製造方法 |
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JP2008292608A JP2008292608A (ja) | 2008-12-04 |
JP2008292608A5 JP2008292608A5 (ja) | 2010-04-15 |
JP5150138B2 true JP5150138B2 (ja) | 2013-02-20 |
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US (1) | US20080292786A1 (ja) |
JP (1) | JP5150138B2 (ja) |
KR (1) | KR100994870B1 (ja) |
CN (1) | CN101311789A (ja) |
TW (1) | TW200915250A (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010032768A (ja) | 2008-07-29 | 2010-02-12 | Hitachi Displays Ltd | 表示装置およびその製造方法 |
JP2011227369A (ja) | 2010-04-22 | 2011-11-10 | Hitachi Displays Ltd | 画像表示装置及びその製造方法 |
US9142797B2 (en) | 2010-05-31 | 2015-09-22 | Industrial Technology Research Institute | Gas barrier substrate and organic electro-luminescent device |
US20110291544A1 (en) * | 2010-05-31 | 2011-12-01 | Industrial Technology Research Institute | Gas barrier substrate, package of organic electro-luminenscent device and packaging method thereof |
CN101980393A (zh) * | 2010-09-21 | 2011-02-23 | 福建钧石能源有限公司 | 大面积柔性光电器件的制造方法 |
KR101295705B1 (ko) * | 2011-04-25 | 2013-08-16 | 도레이첨단소재 주식회사 | 투명 플라스틱기판용 페녹시수지 조성물 및 이를 이용한 투명 플라스틱 기판소재 |
US20140170424A1 (en) * | 2011-07-15 | 2014-06-19 | Konica Minolta, Inc. | Gas barrier film and method for producing same |
CN102636898B (zh) * | 2012-03-14 | 2014-03-12 | 京东方科技集团股份有限公司 | 一种柔性显示装置的制备方法 |
JP5956867B2 (ja) * | 2012-08-21 | 2016-07-27 | 株式会社ジャパンディスプレイ | 表示装置の製造方法 |
JP5898328B6 (ja) * | 2012-09-27 | 2018-06-27 | 新日鉄住金化学株式会社 | 表示装置の製造方法 |
KR101445044B1 (ko) | 2012-11-30 | 2014-09-26 | 주식회사 엘지화학 | 플렉서블 기판을 포함하는 유기 발광 소자 및 이의 제조방법 |
JP2014186169A (ja) * | 2013-03-22 | 2014-10-02 | Toshiba Corp | 表示装置の製造方法及び表示装置 |
JP2015060780A (ja) * | 2013-09-20 | 2015-03-30 | 株式会社東芝 | 表示装置の製造方法及び製造システム |
KR102006728B1 (ko) * | 2013-12-02 | 2019-08-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 제조방법 |
JP2016004112A (ja) * | 2014-06-16 | 2016-01-12 | 株式会社ジャパンディスプレイ | 表示装置の製造方法 |
KR102410594B1 (ko) * | 2015-04-30 | 2022-06-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 구비하는 표시 패널 |
KR102288354B1 (ko) | 2015-08-10 | 2021-08-11 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치의 제조 방법 |
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CN109087936A (zh) * | 2018-08-24 | 2018-12-25 | 京东方科技集团股份有限公司 | 一种柔性显示基板的制备方法 |
JP7306835B2 (ja) * | 2019-02-19 | 2023-07-11 | 株式会社ジャパンディスプレイ | 樹脂基板を有する装置及びその製造方法 |
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JP4619462B2 (ja) * | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
KR100481994B1 (ko) * | 1996-08-27 | 2005-12-01 | 세이코 엡슨 가부시키가이샤 | 박리방법,박막디바이스의전사방법,및그것을이용하여제조되는박막디바이스,박막집적회로장치및액정표시장치 |
JPH1126733A (ja) * | 1997-07-03 | 1999-01-29 | Seiko Epson Corp | 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置,アクティブマトリクス基板、液晶表示装置および電子機器 |
TWI225556B (en) * | 2000-09-13 | 2004-12-21 | Au Optronics Corp | Manufacturing method of reflective liquid crystal display |
JP2003066858A (ja) * | 2001-08-23 | 2003-03-05 | Sony Corp | 薄膜デバイス基板の製造方法 |
US7230592B2 (en) * | 2002-03-04 | 2007-06-12 | Hitachi, Ltd. | Organic electroluminescent light emitting display device |
GB0208506D0 (en) * | 2002-04-12 | 2002-05-22 | Dupont Teijin Films Us Ltd | Film coating |
JP2004151561A (ja) * | 2002-10-31 | 2004-05-27 | Seiko Epson Corp | 電気光学装置の製造方法 |
US7102155B2 (en) * | 2003-09-04 | 2006-09-05 | Hitachi, Ltd. | Electrode substrate, thin film transistor, display device and their production |
JP4719156B2 (ja) * | 2003-11-06 | 2011-07-06 | 住友化学株式会社 | 配向した重合体の膜を含む二色性のゲスト−ホスト偏光子 |
GB0327093D0 (en) * | 2003-11-21 | 2003-12-24 | Koninkl Philips Electronics Nv | Active matrix displays and other electronic devices having plastic substrates |
KR100623694B1 (ko) * | 2004-08-30 | 2006-09-19 | 삼성에스디아이 주식회사 | 레이저 전사용 도너 기판 및 그 기판을 사용하여 제조되는유기 전계 발광 소자의 제조 방법 |
US20060244373A1 (en) * | 2005-04-28 | 2006-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method for manufacturing thereof |
KR100830341B1 (ko) * | 2005-09-30 | 2008-05-16 | 삼성에스디아이 주식회사 | 액정표시장치 |
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US20080292786A1 (en) | 2008-11-27 |
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JP2008292608A (ja) | 2008-12-04 |
CN101311789A (zh) | 2008-11-26 |
TW200915250A (en) | 2009-04-01 |
TWI375193B (ja) | 2012-10-21 |
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