JP7304433B2 - 基板処理方法及び基板処理装置 - Google Patents
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
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Description
100 チャック
110 レーザ照射部
D1、D2 デバイス層
P レーザ吸収層
T 重合ウェハ
W1 第1のウェハ
W2 第2のウェハ
Claims (12)
- 第1の基板と第2の基板が接合された重合基板において、前記第2の基板の表面に形成されたデバイス層を前記第1の基板に転写する基板処理方法であって、
前記第2の基板と前記デバイス層の間に形成されたレーザ吸収層に対して、当該第2の基板の裏面側からレーザ光をパルス状に照射し、
前記レーザ吸収層の外周部において、前記重合基板を回転させながら前記レーザ光を照射し、
前記外周部の径方向内側の中央部において、前記重合基板の回転を停止させた状態で、前記レーザ光を走査させる、基板処理方法。 - 前記レーザ吸収層の外周部において、前記重合基板の回転速度は、前記レーザ光が前記レーザ吸収層の径方向外側に照射される場合に比べて内側に照射される場合の方が速い、請求項1に記載の基板処理方法。
- 前記レーザ吸収層の外周部において、前記レーザ吸収層の径方向外側に照射される前記レーザ光の周波数は、内側に照射される前記レーザ光の周波数よりも大きい、請求項1又は2に記載の基板処理方法。
- 前記第2の基板の外周端と、前記重合基板における前記第1の基板と前記第2の基板の接合端との間から、前記レーザ光の照射を開始する、請求項1~3のいずれか一項に記載の基板処理方法。
- 前記レーザ光のエネルギー密度を制御して、前記レーザ吸収層におけるレーザ光の吸光位置を調整する、請求項1~4のいずれか一項に記載の基板処理方法。
- 前記レーザ吸収層に前記レーザ光を照射する際、レーザ発振器から光学素子に向けてパルス状のレーザ光を発振し、前記光学素子においてレーザ光の周波数を調整する、請求項1~5のいずれか一項に記載の基板処理方法。
- 前記レーザ吸収層において、前記レーザ光の入射面と反対側の面に反射膜が形成され、
前記レーザ吸収層に照射された前記レーザ光のうち、当該レーザ吸収層で吸収されない前記レーザ光は前記反射膜で反射され、
前記反射膜で反射された前記レーザ光は、前記レーザ吸収層に吸収される、請求項1~6のいずれか一項に記載の基板処理方法。 - 第1の基板と第2の基板が接合された重合基板において、前記第2の基板の表面に形成されたデバイス層を前記第1の基板に転写する基板処理装置であって、
前記第1の基板の裏面を保持する保持部と、
前記保持部が前記第1の基板を保持した状態で、前記第2の基板と前記デバイス層の間に形成されたレーザ吸収層に対して、当該第2の基板の裏面側からレーザ光をパルス状に照射するレーザ照射部と、
前記保持部を回転させる回転機構と、
前記保持部を移動させる移動機構と、
前記回転機構、前記移動機構及び前記レーザ照射部を制御する制御部と、を有し、
前記レーザ照射部は、前記レーザ吸収層に対して前記レーザ光を走査させて照射し、
前記制御部は、
前記レーザ吸収層の外周部において、前記重合基板を回転させながら前記レーザ光を照射し、
前記外周部の径方向内側の中央部において、前記重合基板の回転を停止させた状態で、前記レーザ光を走査させるように、前記回転機構、前記移動機構及び前記レーザ照射部を制御する、基板処理装置。 - 前記制御部は、前記レーザ吸収層の外周部において、前記重合基板の回転速度が、前記レーザ光を前記レーザ吸収層の径方向外側に照射する場合に比べて内側に照射する場合の方が速くなるように、前記回転機構と前記レーザ照射部を制御する、請求項8に記載の基板処理装置。
- 前記制御部は、前記レーザ吸収層の外周部において、前記レーザ吸収層の径方向外側に照射される前記レーザ光の周波数が、内側に照射される前記レーザ光の周波数よりも大きくなるように、前記回転機構と前記レーザ照射部を制御する、請求項8又は9に記載の基板処理装置。
- 前記レーザ照射部を制御する制御部を有し、
前記制御部は、前記レーザ光のエネルギー密度を制御して、前記レーザ吸収層におけるレーザ光の吸光位置を調整する、請求項8~10のいずれか一項に記載の基板処理装置。 - 前記レーザ照射部を制御する制御部を有し、
前記レーザ照射部は、
レーザ光をパルス状に発振するレーザ発振器と、
前記レーザ発振器からのレーザ光を異なる方向に変向させる光学素子と、を有し、
前記制御部は、前記光学素子を制御して、前記レーザ吸収層に照射されるレーザ光の周波数を調整する、請求項8~11のいずれか一項に記載の基板処理装置。
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