WO2013118536A1 - 処理方法及び処理装置 - Google Patents
処理方法及び処理装置 Download PDFInfo
- Publication number
- WO2013118536A1 WO2013118536A1 PCT/JP2013/050468 JP2013050468W WO2013118536A1 WO 2013118536 A1 WO2013118536 A1 WO 2013118536A1 JP 2013050468 W JP2013050468 W JP 2013050468W WO 2013118536 A1 WO2013118536 A1 WO 2013118536A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- separation layer
- adhesive layer
- layer
- protective film
- dicing tape
- Prior art date
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/006—Delaminating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/748—Releasability
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/10—Removing layers, or parts of layers, mechanically or chemically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1111—Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1153—Temperature change for delamination [e.g., heating during delaminating, etc.]
- Y10T156/1158—Electromagnetic radiation applied to work for delamination [e.g., microwave, uv, ir, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1168—Gripping and pulling work apart during delaminating
- Y10T156/1195—Delaminating from release surface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1911—Heating or cooling delaminating means [e.g., melting means, freezing means, etc.]
- Y10T156/1917—Electromagnetic radiation delaminating means [e.g., microwave, uv, ir, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1994—Means for delaminating from release surface
Definitions
- the present invention relates to a processing method and a processing apparatus.
- Patent Documents 1 and 2 describe a laser processing technique for irradiating a wafer with a laser beam and cutting the wafer into chips.
- a protective film is formed on the surface of the wafer at the time of cutting in order to prevent the influence of debris generated when the wafer is cut by a laser.
- a wafer support system that maintains the strength of the wafer by bonding a plate made of glass, hard plastic, or the like called a support (hereinafter referred to as a support plate) to the wafer to be ground, and prevents the occurrence of cracks and warpage of the wafer. has been developed. Since the wafer strength can be maintained by this wafer support system, conveyance of the thinned wafer can be automated.
- the wafer and the support plate are bonded together using an adhesive tape, a thermoplastic resin, an adhesive, or the like, and the support plate is peeled from the wafer before dicing the wafer.
- an adhesive tape is used for bonding the wafer and the support plate
- the wafer is peeled off by peeling off the support plate.
- a thermoplastic resin is used, the wafer is peeled off by heating and melting. And when using an adhesive agent, it peels by using a solution.
- the surface of the wafer opposite to the surface to which the support plate is bonded may be bonded to another support such as a dicing tape. is there. Since the wafer is supported by the dicing tape, the occurrence of cracks and the like can be suppressed even when the film thickness is thin and the strength is low.
- the adhering matter since dirt may adhere to the surface of the wafer during the manufacturing process, the adhering matter must be removed to clean the surface of the wafer.
- the adhesive or the like remains on the surface of the wafer.
- the adhesive is dissolved, a dissolved residue derived from a filler or the like in the adhesive may remain.
- a residue derived from each layer may be generated.
- Patent Documents 1 and 2 do not describe anything about cleaning a wafer without leaving deposits and dissolved residues.
- the present invention has been made to solve the above-described problems, and an object thereof is to provide a processing method and a processing apparatus capable of efficiently cleaning a substrate such as a wafer.
- a processing method includes a laminate in which a substrate, an adhesive layer, a separation layer that is altered by absorbing light, and a support are laminated in this order.
- a processing method for processing wherein the separation layer is irradiated with light to denature, and after removing the support from the laminate, a release liquid for removing the separation layer is applied to the separation layer, and
- the method includes a separation layer removing step for removing the separation layer, and an adhesive layer dissolving step for dissolving the adhesive layer by applying a solution for dissolving the adhesive layer to the adhesive layer.
- the wafer 1 is an object to be cleaned and is mounted on a dicing tape 2 described below.
- the wafer 1 is a substrate on which a circuit (element) is formed, and a conventionally known substrate such as a semiconductor can be used. Note that the processing method according to this embodiment can also be applied to the wafer 1 on which the dicing tape 2 is not mounted.
- the dicing tape 2 is larger than the outer diameter of the wafer 1, and when these are bonded, a part of the dicing tape 2 is exposed at the outer edge of the wafer 1.
- a dicing frame (frame portion) 3 for preventing the dicing tape 2 from bending may be provided on the outer periphery of the exposed surface of the dicing tape 2 attached to the wafer 1.
- the support is sometimes referred to as a support plate and supports the wafer 1 and is light transmissive. Therefore, when light is irradiated from the outside of the laminate toward the support, the light passes through the support and reaches the separation layer 11. Further, the support is not necessarily required to transmit all the light, but may be any light as long as it can transmit the light to be absorbed by the separation layer 11 (having a desired wavelength).
- the separation layer 11 is a layer formed of a material that changes in quality by absorbing light irradiated through the support.
- the “deterioration” of the separation layer 11 means a phenomenon that causes the separation layer 11 to be broken by receiving a slight external force, or a state in which the adhesive force with the layer in contact with the separation layer 11 is reduced. means.
- the alteration of the separation layer 11 includes decomposition (exothermic or non-exothermic), cross-linking, configuration change or dissociation of functional groups (and curing of the separation layer accompanying these, degassing). , Contraction or expansion) and the like.
- the alteration of the separation layer 11 occurs as a result of light absorption by the material constituting the separation layer 11. Therefore, the type of alteration of the separation layer 11 can be changed according to the type of material constituting the separation layer 11.
- the separation layer 11 is provided on the surface of the support on the side where the wafer 1 is bonded via the adhesive layer 10. That is, the separation layer 11 is provided between the support and the adhesive layer 10.
- the separation layer 11 is preferably formed only from a material having a structure that absorbs light, but the material does not have a structure that absorbs light as long as the essential characteristics of the present invention are not impaired. May be added to form the separation layer 11. Further, it is preferable that the surface of the separation layer 11 on the side facing the adhesive layer 10 is flat (unevenness is not formed), whereby the separation layer 11 can be easily formed, and even when pasted. It becomes possible to paste on.
- the separation layer 11 may be used by pasting a material that forms the separation layer 11 as shown below into a support in advance, or a material that forms the separation layer 11 on the support. You may use what was applied and solidified in the shape of a film.
- the method of applying the material constituting the separation layer 11 on the support can be appropriately selected from conventionally known methods according to the type of material constituting the separation layer 11.
- the separation layer 11 may contain a polymer containing a light-absorbing structure in its repeating unit.
- the polymer is altered by irradiation with light. The alteration of the polymer occurs when the structure absorbs the irradiated light.
- the separation layer 11 has lost strength or adhesiveness before being irradiated with light as a result of the alteration of the polymer. Therefore, by applying a slight external force (for example, lifting the support), the separation layer 11 is broken and the support and the wafer 1 can be easily separated.
- the said inorganic substance should just be the structure which changes in quality by absorbing light, for example, 1 or more types of inorganic substances selected from the group which consists of a metal, a metal compound, and carbon can be used conveniently.
- the metal compound refers to a compound containing a metal atom, and can be, for example, a metal oxide or a metal nitride.
- examples of such inorganic materials include, but are not limited to, gold, silver, copper, iron, nickel, aluminum, titanium, chromium, SiO 2 , SiN, Si 3 N 4 , TiN, and carbon.
- One or more inorganic substances selected from the group consisting of: Carbon is a concept that may include an allotrope of carbon, for example, diamond, fullerene, diamond-like carbon, carbon nanotube, and the like.
- the separation layer 11 may be formed of a compound having an infrared absorbing structure.
- the compound is altered by absorbing infrared rays.
- the separation layer 11 has lost its strength or adhesiveness before being irradiated with infrared rays as a result of the alteration of the compound. Therefore, by applying a slight external force (for example, lifting the support plate), the separation layer 11 is broken and the support and the wafer 1 can be easily separated.
- Examples of the compound having an infrared absorptive structure or a compound having an infrared absorptive structure include alkanes, alkenes (vinyl, trans, cis, vinylidene, trisubstituted, tetrasubstituted, conjugated, cumulene, Cyclic), alkyne (monosubstituted, disubstituted), monocyclic aromatic (benzene, monosubstituted, disubstituted, trisubstituted), alcohol and phenol (free OH, intramolecular hydrogen bond, intermolecular hydrogen bond, saturation) Secondary, saturated tertiary, unsaturated secondary, unsaturated tertiary), acetal, ketal, aliphatic ether, aromatic ether, vinyl ether, oxirane ring ether, peroxide ether, ketone, dialkylcarbonyl, Aromatic carbonyl, 1,3-diketone enol, o-
- the fluorocarbon constituting the separation layer 11 can be suitably formed by a plasma CVD method.
- fluorocarbons, C x F y (perfluorocarbon) and C x H y F z (x , y and z are natural numbers) include, but are not limited to, for example, CHF 3, CH 2 F 2 , C 2 It can be H 2 F 2 , C 4 F 8 , C 2 F 6 , C 5 F 8 or the like.
- the separation layer 11 may contain an infrared absorbing material.
- the separation layer 11 is configured to contain an infrared absorbing material, thereby being altered by absorbing light. As a result, the separation layer 11 loses strength or adhesiveness before being irradiated with light. Therefore, by applying a slight external force (for example, lifting the support), the separation layer 11 is broken and the support and the wafer 1 can be easily separated.
- the infrared absorbing material only needs to have a structure that is altered by absorbing infrared rays.
- carbon black, iron particles, or aluminum particles can be suitably used.
- the adhesive layer 10 adheres and fixes the wafer 1 to the support and simultaneously covers and protects the surface of the wafer 1.
- the adhesive layer 10 preferably has adhesiveness and strength for fixing the wafer 1 to the support and maintaining the covering of the surface to be protected of the wafer 1 when the wafer 1 is processed or transported.
- the wafer 1 need not be fixed to the support such as after the manufacturing process, and can be easily separated or removed from the wafer 1 after the support is separated from the laminate as shown in FIG. It is preferable that it can be done.
- the adhesive for forming the adhesive layer 10 is not particularly limited as long as it contains an adhesive resin. Furthermore, the adhesive layer 10 may contain a filler or the like in addition to the adhesive.
- the resin having adhesiveness examples include gelatin, cellulose, cellulose ester (for example, cellulose acetate, nitrocellulose), polyphenol, polyvinyl butyral, polyvinyl acetal, polycarbonate, polyurethane, polyester, polyorthoester, polyacetal, polyvinyl alcohol, polyvinyl. Pyrrolidone, a copolymer of vinylidene chloride and acrylonitrile, poly (meth) acrylate, polyvinyl chloride, a silicone resin, or a block copolymer containing a polyurethane unit can be used alone or in admixture of two or more.
- Examples of the filler include silica, alumina, zinc oxide, titanium oxide, calcium oxide, magnesium oxide, iron oxide, tin oxide, antimony oxide, ferrites, calcium hydroxide, magnesium hydroxide, aluminum hydroxide, and basic magnesium carbonate. , Calcium carbonate, Zinc carbonate, Barium carbonate, Dorsonite, Hydrotalcite, Calcium sulfate, Barium sulfate, Calcium silicate, Talc, Clay, Mica, Montmorillonite, Bentonite, Sepiolite, Imogolite, Sericite, Glass fiber, Glass beads, Silica Examples include balun, aluminum nitride, boron nitride, silicon nitride, carbon black, graphite, carbon fiber, carbon balun, zinc borate, and various magnetic powders.
- the adhesive can be prepared by mixing a resin and a filler using a known method. At this time, you may use the solution diluted with the organic solvent as needed.
- organic solvent examples include ketones such as acetone, methyl ethyl ketone, cyclohexanone, methyl isoamyl ketone, 2-heptanone; ethylene glycol, ethylene glycol monoacetate, diethylene glycol, diethylene glycol monoacetate, propylene glycol, propylene glycol monoacetate, dipropylene glycol Or polyhydric alcohols such as monomethyl ether, monoethyl ether, monopropyl ether, monobutyl ether or monophenyl ether of dipropylene glycol monoacetate and derivatives thereof; cyclic ethers such as dioxane; methyl lactate, ethyl lactate, methyl acetate , Ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, ethanol , And the like and terpene solvent, esters such as Shipuropion eth
- terpene solvents examples include ⁇ -pinene, camphene, pinane, myrcene, dihydromyrcene, p-menthane, 3-carene, p-menthadiene, ⁇ -terpinene, ⁇ -terpinene, ⁇ -ferrandrene, osymene, limonene.
- FIGS. 1A to 1F each step of the processing method according to the first embodiment will be described.
- the separation layer is removed by applying a stripping solution for removing the separation layer 11 from the nozzle 4 onto the wafer 1 (separation layer removal step).
- a stripping solution for removing the separation layer 11 from the nozzle 4 onto the wafer 1 separatation layer removal step.
- the mode of applying the release liquid to the separation layer 11 is not limited to spin coating, and can be applied by various methods such as spray coating and slit coating.
- the peeling liquid applied to the separation layer 11 may be a solution that can remove the separation layer 11, and need not be a material that can dissolve the adhesive layer 10.
- the stripping solution is preferably a material that does not dissolve the adhesive layer 10, that is, a material that does not substantially have compatibility with the adhesive layer 10. Thereby, it becomes easier to peel the separation layer 11.
- the stripping solution capable of reliably dissolving the separation layer 11 can be used without considering the material of the adhesive layer 10, the separation layer can be removed reliably. As a result, the dissolved residue of the separation layer 11 can be prevented from being generated on the wafer 1.
- the stripping solution is more preferably an alkaline solution. More preferably, the alkaline solution is an amine compound.
- the amine compound at least one compound selected from the group consisting of primary, secondary, and tertiary aliphatic amines, alicyclic amines, aromatic amines, and heterocyclic amines is used. be able to.
- Examples of the primary aliphatic amine include monomethanolamine, monoethanolamine (MEA), monoisopropanolamine, ethylenediamine, 2- (2-aminoethoxy) ethanol (DGA), and 2- (2-aminoethylamino) ethanol.
- Examples of secondary aliphatic amines include 2- (methylamino) ethanol (MMA), diethanolamine, iminobispropylamine, and 2-ethylaminoethanol.
- Examples of tertiary aliphatic amines include trimethylamine. Examples include ethanolamine, triisopropanolamine, and diethylaminoethanol.
- examples of the alicyclic amine include cyclohexylamine and dicyclohexylamine.
- examples of the aromatic amine include benzylamine, dibenzylamine, N-methylbenzylamine and the like.
- examples of the heterocyclic amine include N-hydroxyethylpiperidine and 1,8-diazabicyclo [5,4,0] -7-undecene.
- monoethanolamine, 2- (2-aminoethoxy) ethanol, 2-ethylaminoethanol, 2- (methylamino) ethanol (MMA), and other alkanolamines are particularly preferable.
- the stripping solution may be used by mixing with other solvents.
- the solvent that may be mixed in the above-described stripping solution include lactones such as ⁇ -butyrolactone, ketones such as acetone, methyl ethyl ketone, cyclohexanone, methyl-n-pentyl ketone, methyl isopentyl ketone, and 2-heptanone.
- examples include organic solvents of polyhydric alcohols such as ethylene glycol, diethylene glycol, propylene glycol, and dipropylene glycol, compounds having an ester bond such as ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, and dipropylene glycol monoacetate.
- the solvent that may be mixed with the above-described stripping solution includes at least one selected from aprotic organic solvents, polyhydric alcohols, compounds having an ester bond, or derivatives of polyhydric alcohols.
- the mixing ratio of the alkaline solution and the solvent that may be mixed with the stripping solution is 95: 5 to 5:95, preferably 80:20 to 5:95, and 8: It is more preferably 2 to 2: 8, and particularly preferably 5: 5 to 2: 8. Due to the mixing ratio, the peelability and handleability are excellent.
- the peeling liquid remaining on the adhesive layer 10 is removed from the nozzle 4 to the adhesive layer 10 as shown in FIG. 1 (c).
- a cleaning solution may be applied (cleaning step).
- the mode of applying the cleaning liquid to the separation layer 11 is not limited to spin coating, and can be applied by various methods such as spray coating and slit coating.
- the cleaning liquid removes the peeling liquid remaining on the adhesive layer 10 and the wafer 1 after removing the separation layer 11.
- the cleaning liquid is not particularly limited as long as it is a liquid that can wash away and remove the remaining stripping liquid from the adhesive layer 10 and the wafer 1, and includes, for example, pure water, alcohol having 1 to 6 carbon atoms, and the like. It is done.
- the wafer When the separation liquid remains after the separation layer 11 is peeled off, the wafer may be corroded, for example, when an alkaline peeling liquid adheres to the wafer 1.
- the remaining stripping solution is removed by cleaning with the cleaning solution after the separation layer 11 is stripped, so that the wafer is not corroded by the stripping solution. Further, since the remaining stripping solution is removed, the dissolution of the adhesive layer 10 by the solution applied later is not disturbed by the stripping solution, so that the solubility of the adhesive layer 10 is also improved.
- the drying method of the adhesive layer 10 is not particularly limited, but may be naturally dried, may be an oven or a hot plate, or may be dried by applying hot air. Further, the wafer 1 may be rotated and the adhesive layer 10 may be rotated and dried.
- a solution for dissolving the adhesive layer 10 is applied from the nozzle 4 to the adhesive layer 10 to dissolve the adhesive layer 10 (dissolution step).
- dissolving the adhesive layer 10 is applied from the nozzle 4 to the adhesive layer 10 to dissolve the adhesive layer 10 (dissolution step).
- the mode of applying the solution to the adhesive layer 10 is not limited to spin coating, and can be applied by various methods such as spray coating and slit coating.
- the solution applied to the adhesive layer 10 is not limited as long as it is a solution that can dissolve the adhesive layer 10.
- hexane, heptane, octane, nonane, methyloctane, decane, undecane, dodecane Linear hydrocarbon such as tridecane, branched hydrocarbon having 3 to 15 carbon atoms; geraniol, nerol, linalool, citral, citronellol, p-menthane, o-menthane, m-menthane, diphenylmenthane, menthol, iso Menthol, neomenthol, limonene, ⁇ -terpinene, ⁇ -terpinene, ⁇ -terpinene, ⁇ -terpineol, ⁇ -terpineol, terpinene-1-ol, terpinene-4-ol, 1,
- the stripping solution, the cleaning solution, and the dissolving solution may be discharged from the same nozzle 4 or may be discharged from different nozzles as described above. That is, a dedicated nozzle for discharging each solution may be used only for the type of solution.
- the nozzle 4 is fixed on the vicinity of the center of the target object to which the solution is to be applied, and even if the solution is discharged toward the center of the target object.
- the solution may be discharged while swinging from the center of the object to be processed onto the end of the object to be processed. By discharging the solution while the nozzle 4 swings on the object to be processed, the solution can be more reliably spread over the entire object to be processed.
- the adhesive layer 10 on the wafer 1 is removed by applying a solution as shown in (f) of FIG.
- the processing apparatus is a processing apparatus for processing a laminate formed by laminating a substrate, an adhesive layer, a separation layer that is altered by absorbing light, and a support in this order, The separation layer is irradiated with light to denature it, and after removing the support from the laminate, a separation liquid for removing the separation layer is applied to the separation layer, and the separation layer removing means for removing the separation layer and an adhesive layer are provided.
- An adhesive layer dissolving means for applying a dissolving solution to the adhesive layer to dissolve the adhesive layer is included.
- the processing apparatus according to the present embodiment is an embodiment of the apparatus used in the processing method according to the present embodiment. Therefore, the description of the processing apparatus according to the present embodiment is the processing apparatus according to the above-described embodiment. According to the explanation of
- the separation layer removing means may be provided with a nozzle 4 for discharging the peeling liquid shown in FIG. 1B, and the adhesive layer dissolving means is shown in FIG.
- the nozzle 4 for discharging the solution may be provided.
- the processing apparatus according to the present embodiment dries the cleaning means including the nozzle 4 for discharging the cleaning liquid shown in (c) of FIG. 1 and the adhesive layer 10 shown in (d) of FIG. You may provide the drying means to make.
- FIG. 2 is a diagram illustrating a processing flow of the processing method according to the second embodiment.
- This embodiment is different from the first embodiment in that it includes a protective film forming step of forming a protective film on the exposed surface of the dicing tape 2. Therefore, in this embodiment, a different point from 1st Embodiment is demonstrated in detail, and detailed description is abbreviate
- the layered product is irradiated with light from the support side to alter the separation layer 11, and after removing the support from the layered product, the wafer 1 is separated from the separation layer 11 as shown in FIG. For example, it is placed on a spin cup (not shown) so as to be exposed.
- the protective film prevents the peeling liquid applied when removing the separation layer 11 from adhering to the dicing tape 2 and prevents the dicing tape 2 from being contaminated by the peeling liquid. Moreover, it prevents that the melt
- the protective film is formed of a material that is hardly soluble or insoluble in the stripping solution.
- the material forming the protective film is preferably water-soluble, and examples of the water-soluble material include at least one selected from acrylic resins, vinyl resins, cellulose resins, and amide resins. A seed water-soluble resin can be used.
- acrylic resin examples include acrylic acid, methyl acrylate, methacrylic acid, methyl methacrylate, N, N-dimethylacrylamide, N, N-dimethylaminopropyl methacrylamide, N, N-dimethylaminopropylacrylamide, N- Examples thereof include polymers or copolymers containing monomers such as methyl acrylamide, diacetone acrylamide, N, N-dimethylaminoethyl methacrylate, N, N-diethylaminoethyl methacrylate, N, N-dimethylaminoethyl acrylate, and acryloylmorpholine.
- vinyl-based resin examples include polymers or copolymers having monomers such as N-vinyl pyrrolidone, vinyl imidazolidinone and vinyl acetate as constituent components.
- cellulose resin examples include hydroxypropylmethylcellulose phthalate, hydroxypropylmethylcellulose acetate phthalate, hydroxypropylmethylcellulose hexahydrophthalate, hydroxypropylmethylcellulose acetate succinate, hydroxypropylmethylcellulose, hydroxypropylcellulose, hydroxyethylcellulose, cellulose acetate hexa Hydrophthalate, carboxymethylcellulose, ethylcellulose, methylcellulose and the like can be mentioned.
- water-soluble amide resins can also be used.
- vinyl resins are preferable, and polyvinyl pyrrolidone or polyvinyl alcohol is particularly preferable.
- water-soluble resins may be used alone or in combination of two or more.
- a resin whose dicing tape on which the protective film is formed has an adhesive strength of 50% or less compared to the value of the adhesive strength before the protective film is formed. Is more preferable.
- the thickness of the protective film is preferably 0.1 ⁇ m to 5 ⁇ m, and more preferably 0.2 ⁇ m to 2 ⁇ m.
- the material for forming the protective film may be supplied so that the exposed surface of the dicing tape 2 is at least covered, but the protective film is formed so that the boundary surface between the dicing tape 2 and the dicing frame 3 is covered. It is preferable that a material for forming is supplied and a protective film is formed on the boundary surface. Thereby, when removing a separation layer, it can prevent that a peeling liquid or the melt
- the surface of the separation layer 11 may be masked in advance. Thereby, it can prevent that the protective film is formed in the surface of the separation layer 11, and the removal of the separation layer 11 with a peeling liquid cannot fully be performed.
- the object to be processed may be rotated while supplying the material for forming the protective film.
- the discharged material can be efficiently spread on the dicing tape 2.
- you may irradiate a dicing tape with an ultraviolet-ray, before supplying the said material with respect to a dicing tape.
- the wettability of the said material to a dicing tape can be improved.
- the protective film is formed by drying the material.
- the drying may be natural drying, but may be performed while rotating the object to be processed, for example.
- the drying method is not limited to this, For example, you may dry using oven, a hotplate, etc., and you may apply hot air and dry.
- a cleaning liquid is applied to the adhesive layer 10 from the nozzle 4 to clean the adhesive layer 10.
- the stripping solution remaining on the adhesive layer 10 is removed.
- the protective film is formed of a water-soluble material, the remaining peeling solution can be removed and the protective film can be removed from the dicing tape 2 by using a cleaning liquid such as pure water.
- cleaning is dried. Thereafter, although not shown, also in the present embodiment, the adhesive layer 10 can be dissolved through the dissolving step described in (e) in FIG. 1, and as a result, (f) in FIG. Can be obtained.
- a protective film is formed on the exposed surface of the dicing tape 2, and therefore, when the separation layer 11 is removed using the stripping solution, the stripping solution and the dissolved material of the separation layer 11 adhere to the dicing tape 2. In addition, the dicing tape 2 can be prevented from being contaminated.
- a dicing tape is bonded to the surface of the substrate opposite to the surface on which the adhesive layer is formed, and before the release liquid is applied by the separation layer removing means, It differs from the processing apparatus of the first embodiment in that it further includes a protective film forming means for forming a protective film on an exposed surface to which the substrate is bonded, on the surface to which the substrate is bonded.
- the processing apparatus according to the present embodiment is an embodiment of the apparatus used in the processing method according to the present embodiment
- the description of the processing apparatus according to the present embodiment is the processing according to the above-described embodiment.
- the protective film forming means may include, for example, a nozzle 7 for discharging a material for forming the protective film, as shown in FIG.
- the protective film forming means may further include an oven or a hot plate to dry the discharged material for forming the protective film.
- the exposed surface of the dicing tape 2 is insoluble in the solution.
- the second embodiment is different from the second embodiment in that it includes a step of forming a protective film containing an appropriate material. Therefore, in this embodiment, a different point from 2nd Embodiment is demonstrated in detail, and detailed description is abbreviate
- the protective film formed in the first protective film forming step is formed of a water-soluble material
- the cleaning step when pure water or the like is used as the cleaning liquid for removing the peeling liquid, the protective film is dissolved in the cleaning liquid. Then, the protective film is removed. Therefore, the outer peripheral part of the dicing tape 2 is exposed after the cleaning process.
- a protective film is formed on the exposed surface of the dicing tape 2 both before the separation layer 11 is removed and before the adhesive layer 10 is dissolved. It is possible to prevent the dicing tape 2 from being contaminated by the adhering lysate and the lysate of the dissolving liquid and the adhesive layer 10.
- processing apparatus used in the processing method according to the present embodiment is also included in the scope of the present invention.
- the protection liquid is supplied to the exposed surface of the dicing tape 2, thereby protecting the exposed surface of the dicing tape 2. That is, in the processing method according to the present embodiment, the release liquid is applied to the separation layer 11 while supplying the protective liquid to the exposed surface of the dicing tape 2. Can be prevented from being contaminated. In order to more reliably prevent contamination of the exposed surface of the dicing tape 2, the amount of the protective liquid supplied to the exposed surface of the dicing tape 2 may be increased.
- the solution may be applied to the adhesive layer 10 while supplying the protective solution to the exposed surface of the dicing tape 2.
- processing apparatus used in the processing method according to the present embodiment is also included in the scope of the present invention.
- Example 1 The laminated body was produced as follows.
- TZNR-3007 (trade name, manufactured by Tokyo Ohka Kogyo Co., Ltd.) as an adhesive composition is spin-coated on a 12-inch silicon wafer substrate (thickness: 775 ⁇ m) on the wafer substrate, and 3 minutes at 100 ° C., 160 ° C. and 220 ° C. Each was baked to form an adhesive layer (thickness 50 ⁇ m).
- a fluorocarbon film (thickness 1 ⁇ m) is supported on a support (12 inches) by CVD using C 4 F 8 as a reaction gas.
- a separation layer was formed on a glass substrate having a thickness of 700 ⁇ m.
- the wafer substrate and the support having the separation layer were bonded to each other through the adhesive layer to produce a laminate in which the wafer substrate, the adhesive layer, the separation layer, and the support were laminated in this order. Thereafter, the wafer substrate in the laminate was ground (thickness after grinding 50 ⁇ m).
- the separation layer and the adhesion layer were removed using 700 cc of p-menthane as a solution without changing the separation layer of the laminate produced under the same conditions as in Example 1 without using a peeling solution. did.
- the total processing time for removing the separation layer and the adhesive layer was 840 seconds. As a result, the material forming the separation layer was adhered on the wafer substrate.
- the time for removing the separation layer and the adhesive layer is shortened by applying the release liquid to the separation layer and removing the separation layer, and then applying the solution to the adhesion layer to dissolve the adhesion layer.
- the adhesive layer could be dissolved with a small amount of the solution. It can also be said that the adhesive layer could be efficiently dissolved because dissolution of the separation layer no longer hinders dissolution of the adhesive layer.
- Example 2 While supplying the protective liquid to the exposed surface of the dicing tape, the degree of contamination of the dicing tape when the release liquid was applied to the separation layer was examined.
- the adhesive layer and the separation layer were produced in the same manner as in Example 1.
- a dicing tape larger than the outer diameter was affixed to the wafer substrate so as to be exposed at the outer edge of the wafer, and a dicing frame was provided on the outer edge of the exposed surface of the dicing tape.
- the laminated body was formed like Example 1, the detailed description about preparation of a laminated body is abbreviate
- FIG. 3 is a diagram showing a difference in the degree of contamination of the exposed surface when the amount of pure water supplied to the exposed surface of the dicing tape is changed.
- FIG. 3 shows an overview photograph and a micrograph of the exposed surface after the separation layer is removed. It should be noted that, in order from the left photograph, the results of processing according to comparative examples and conditions (i) to (iii) are shown.
- the exposed surface of the dicing tape was contaminated as shown in both the overview photograph and the micrograph, but under the conditions (i) to (iii) of the example.
- the contamination of the exposed surface of the dicing tape was improved as shown in both the overview and micrographs. Furthermore, the contamination of the exposed surface was further improved by increasing the amount of pure water.
- Example 3 After forming a protective film on the exposed surface of the dicing tape, the degree of contamination of the dicing tape when the release liquid was applied to the separation layer was examined. The production of the laminate and the separation of the support were performed in the same manner as in Example 2.
- TPF trade name, manufactured by Tokyo Ohka Kogyo Co., Ltd.
- the application amount of TPF was changed, and the degree of contamination of the dicing tape was compared.
- the prepared TPF was applied to the exposed surface of the dicing tape under the following conditions (i) to (iv): (i) film thickness 0.4 ⁇ m, (ii) film thickness 1.4 ⁇ m, (iii) film thickness 2.6 ⁇ m, (iv) film thickness 0.7 ⁇ m. Under condition (iv), a protective film was formed, and a peeling solution was applied to the separation layer while supplying 250 cc of pure water onto the protective film. The thickest protective film is formed on the exposed surface under condition (iii), and the thinnest is formed under condition (i).
- FIG. 4 is a diagram showing a difference in the degree of contamination of the exposed surface when the amount of material forming the protective film applied to the exposed surface of the dicing tape is changed.
- FIG. 4 shows an overview photograph and a micrograph of the exposed surface after the separation layer is removed. The results of processing (i) to (iv) are shown in order from the left photograph.
- the degree of contamination of the exposed surface of the dicing tape was determined based on the overview photograph and the micrograph. The determination of the degree of contamination was performed in the same manner as in Example 2.
- the present invention can be suitably used, for example, in a semiconductor wafer manufacturing process.
Abstract
Description
以下、本発明の第1実施形態について、詳細に説明する。
本実施形態に係る処理方法は、基板と、接着層と、光を吸収することにより変質する分離層と、支持体とをこの順番に積層してなる積層体を処理する処理方法であって、分離層に光を照射して変質させ、上記積層体から上記支持体を除去した後に、分離層を除去する剥離液を分離層に塗布して、分離層を除去する分離層除去工程と、接着層を溶解する溶解液を接着層に塗布して、接着層を溶解させる接着層溶解工程とを含む方法である。
ウエハ1は、洗浄処理の対象となる被処理体であり、下記に記載するダイシングテープ2に装着されている。また、ウエハ1は回路(素子)が形成された基板であり、半導体など従来公知の材質の基板を用いることができる。なお、本実施形態に係る処理方法を、ダイシングテープ2が装着されていないウエハ1にも適用することができる。
ウエハ1には、さらにダイシングテープ2が貼り付けられていてもよい。ダイシングテープ2は、ウエハ1の強度を補強するためにウエハ1の接着層10が形成されている面とは反対側の面に接着される。ダイシングテープ2としては、例えば、ベースフィルムに粘着層が形成された構成のダイシングテープを用いることができる。ベースフィルムとしては、例えば、PVC(ポリ塩化ビニル)、ポリオレフィン又はポリプロピレン等の樹脂フィルムを用いることができる。
支持体は、サポートプレートと称されることもあり、ウエハ1を支持するものであり、かつ光透過性を有している。そのため、積層体の外から支持体に向けて光が照射されたときに、当該光が支持体を通過して分離層11に到達する。また、支持体は、必ずしも全ての光を透過させる必要はなく、分離層11に吸収されるべき(所望の波長を有している)光を透過させることができればよい。
分離層11は、支持体を介して照射される光を吸収することによって変質する材料から形成されている層である。本明細書において、分離層11が「変質する」とは、分離層11をわずかな外力を受けて破壊され得る状態、又は分離層11と接する層との接着力が低下した状態にさせる現象を意味する。また、分離層11の変質は、吸収した光のエネルギーによる(発熱性又は非発熱性の)分解、架橋、立体配置の変化又は官能基の解離(そして、これらにともなう分離層の硬化、脱ガス、収縮又は膨張)等であり得る。分離層11の変質は、分離層11を構成する材料による光の吸収の結果として生じる。よって、分離層11の変質の種類は、分離層11を構成する材料の種類に応じて変化し得る。
分離層11は、光吸収性を有している構造をその繰返し単位に含んでいる重合体を含有していてもよい。当該重合体は、光の照射を受けて変質する。当該重合体の変質は、上記構造が照射された光を吸収することによって生じる。分離層11は、重合体の変質の結果として、光の照射を受ける前の強度又は接着性を失っている。よって、わずかな外力を加える(例えば、支持体を持ち上げるなど)ことによって、分離層11が破壊されて、支持体とウエハ1とを容易に分離することができる。
分離層11は、無機物からなっていてもよい。分離層11は、無機物によって構成されることにより、光を吸収することによって変質するようになっており、その結果として、光の照射を受ける前の強度又は接着性を失う。よって、わずかな外力を加える(例えば、支持体を持ち上げる等)ことによって、分離層11が破壊されて、支持体とウエハ1とを容易に分離することができる。
分離層11は、赤外線吸収性の構造を有する化合物によって形成されていてもよい。当該化合物は、赤外線を吸収することにより変質する。分離層11は、化合物の変質の結果として、赤外線の照射を受ける前の強度又は接着性を失っている。よって、わずかな外力を加える(例えば、サポートプレートを持ち上げるなど)ことによって、分離層11が破壊されて、支持体とウエハ1とを容易に分離することができる。
分離層11は、フルオロカーボンからなっていてもよい。分離層11は、フルオロカーボンによって構成されることにより、光を吸収することによって変質するようになっており、その結果として、光の照射を受ける前の強度又は接着性を失う。よって、わずかな外力を加える(例えば、支持体を持ち上げるなど)ことによって、分離層11が破壊されて、支持体とウエハ1とを容易に分離することができる。
分離層11は、赤外線吸収物質を含有していてもよい。分離層11は、赤外線吸収物質を含有して構成されることにより、光を吸収することによって変質するようになっており、その結果として、光の照射を受ける前の強度又は接着性を失う。よって、わずかな外力を加える(例えば、支持体を持ち上げる等)ことによって、分離層11が破壊されて、支持体とウエハ1とを容易に分離することができる。
接着層10は、ウエハ1を支持体に接着固定すると同時に、ウエハ1の表面を覆って保護する。接着層10は、ウエハ1の加工又は搬送の際に、支持体に対するウエハ1の固定、及びウエハ1の保護すべき面の被覆を維持する接着性及び強度を有するものであることが好ましい。一方で、製造プロセス後など支持体に対するウエハ1の固定が不要になり、図1中の(a)のように、積層体から支持体を分離した後においては、ウエハ1から容易に分離又は除去され得るものであることが好ましい。
ここで、分離層11に塗布する剥離液としては、分離層11を除去することができる溶液であればよく、接着層10をも溶解させる材料である必要はない。言い換えると、剥離液は、接着層10を溶解させない材料、すなわち実質的に接着層10との相溶性を有さない材料であることが好ましい。これにより、分離層11をより剥離しやすくなる。
ここで、洗浄液は、分離層11を除去した後に、接着層10及びウエハ1上に残存する剥離液を除去する。洗浄液としては、接着層10及びウエハ1上から、残存する剥離液を洗い流して除去することができる液体であれば特に限定されず、例えば、純水、炭素数が1から6のアルコール等が挙げられる。
ここで、接着層10に塗布する溶解液としては、接着層10を溶解することができる溶液であれば限定されないが、例えば、ヘキサン、ヘプタン、オクタン、ノナン、メチルオクタン、デカン、ウンデカン、ドデカン、トリデカン等の直鎖状の炭化水素、炭素数3から15の分岐状の炭化水素;ゲラニオール、ネロール、リナロール、シトラール、シトロネロール、p-メンタン、o-メンタン、m-メンタン、ジフェニルメンタン、メントール、イソメントール、ネオメントール、リモネン、α-テルピネン、β-テルピネン、γ-テルピネン、α-テルピネオール、β-テルピネオール、γ-テルピネオール、テルピネン-1-オール、テルピネン-4-オール、1,4-テルピン、1,8-テルピン、カルボン、ヨノン、ツヨン、カンファー、ボルナン、ボルネオール、ノルボルナン、ピナン、α-ピネン、β-ピネン、ツジャン、α-ツジョン、β-ツジョン、カラン、ショウノウ、ロンギホレン、1,4-シネオール、1,8-シネオール等のモノテルペン類、アビエタン、アビエチン酸等のジテルペン類、等の環状の炭化水素(テルペン類)が挙げられる。
本実施形態に係る処理装置は、基板と、接着層と、光を吸収することによって変質する分離層と、支持体とをこの順番に積層してなる積層体を処理する処理装置であって、分離層に光を照射して変質させ、積層体から支持体を除去した後に、分離層を除去する剥離液を分離層に塗布して、分離層を除去する分離層除去手段と、接着層を溶解する溶解液を接着層に塗布して、接着層を溶解させる接着層溶解手段とを含む構成である。
〔処理方法〕
図2を参照して、本発明の第2実施形態に係る処理方法を説明する。図2は、第2実施形態に係る処理方法の処理の流れを示す図である。本実施形態においては、ダイシングテープ2の露出面に保護膜を形成する保護膜形成工程を含んでいる点で、第1実施形態と相違する。したがって、本実施形態においては、第1実施形態と異なる点について詳細に説明し、第1実施形態と同様点については詳細な説明を省略する。また、第1実施形態で用いた部材と同様の部材については、同一の番号を付し、その説明を省略する。
ここで、保護膜は、分離層11を除去する際に塗布される剥離液がダイシングテープ2に付着するのを防ぎ、剥離液によりダイシングテープ2が汚染されるのを防ぐ。また、剥離液が塗布されて溶解した分離層11の溶解物がダイシングテープ2に付着するのも防ぐ。
本実施形態に係る処理装置は、基板において、接着層が形成されている面とは反対側の面にダイシングテープが接着されており、分離層除去手段による剥離液の塗布前に、ダイシングテープの基板が接着されている側の面における、基板が接着されていない露出面に保護膜を形成する保護膜形成手段をさらに備えている点において、第1実施形態の処理装置と異なっている。
本実施形態においては、剥離液を除去する洗浄液を塗布する洗浄工程と、接着層10を溶解する溶解液を塗布する接着層溶解工程との間に、ダイシングテープ2の露出面に溶解液に不溶な材料を含む保護膜を形成する工程を含んでいる点で第2実施形態と相違する。したがって、本実施形態においては、第2実施形態と異なる点について詳細に説明し、第2実施形態と同様の点については詳細な説明を省略する。また、第2実施形態で用いた部材と同様の部材については、同一の番号を付し、その説明を省略する。
本実施形態においては、ダイシングテープ2の露出面に保護膜を形成する代わりに、剥離液が付着するのを防ぐ保護液を供給しながら、剥離液を分離層11に塗布している点で第2実施形態とは異なる。したがって、本実施形態においては、第2実施形態と異なる点について詳細に説明し、第2実施形態と同様の点については詳細な説明を省略する。また、第2実施形態で用いた部材と同様の部材については、同一の番号を付し、その説明を省略する。
ここで、保護液としては、ダイシングテープ2の露出面に剥離液が付着することを防止でき、かつダイシングテープ2を汚染しない液体であれば特に限定されないが、例えば、純水、炭素数1~6のアルコール等を使用することが可能であり、純水を使用することが好ましい。
積層体を以下のように作製した。
12インチシリコンウエハ基板(厚さ775μm)に接着剤組成物としてTZNR-3007(商品名、東京応化工業株式会社製)をウエハ基板にスピン塗布し、100℃、160℃および220℃にて3分間ずつベークして接着層(厚さ50μm)を形成した。次に、流量400sccm、圧力700mTorr、高周波電力2500Wおよび成膜温度240℃の条件下において、反応ガスとしてC4F8を使用したCVD法により、フルオロカーボン膜(厚さ1μm)を支持体(12インチガラス基板、厚さ700μm)上に形成し、分離層とした。
次に、532nmの波長を有するYVO4レーザーを、積層体における支持体側から分離層に向けて照射した。レーザーの照射により、分離層を変質させ、積層体から支持体を除去した。支持体を除去した後は、変質した分離層を形成していた材料が接着層上に残存していた。
ダイシングテープの露出面に保護液を供給しながら、分離層に剥離液を塗布した場合の、ダイシングテープの汚染の程度を調べた。
次に、532nmの波長を有するYVO4レーザーを、積層体における支持体側から分離層に向けて照射した。レーザーの照射により、分離層を変質させ、積層体から支持体を除去した。支持体を除去した後は、変質した分離層が接着層に残存していた。
次に、純水をダイシングテープの露出面に供給している状態で、分離層に、MMA:PGME=3:7(重量比)の混合溶剤を剥離液として10cc塗布して、分離層を除去した。なお、純水は以下の条件(i)~(iii)で露出面に供給した:(i)純水を100cc塗布(水ガード(100cc))、(ii)純水を250cc塗布(水ガード(250cc))、(iii)純水を1000cc塗布(水ガード1000cc)。なお、比較例(ガード無し処理)として、純水による露出面の保護せずに、分離層に剥離液を塗布した。分離層除去後、付着物によるダイシングテープの露出面の汚染の程度を、目視及び顕微鏡にてそれぞれ確認した。結果を図3に示す。
ダイシングテープの露出面に保護膜を形成した後、分離層に剥離液を塗布した場合の、ダイシングテープの汚染の程度を調べた。積層体の作製及び支持体の分離については、実施例2と同様に行った。
次に、支持体を分離した後、ダイシングテープの露出面に、TPF(商品名、東京応化工業株式会社製)を塗布して保護膜を作製した。TPFの塗布量を変化させ、ダイシングテープの汚染の程度を比較した。
実施例4~12において、剥離液として、以下の表1に示す組成の混合溶剤を用いて、分離層を形成していた材料を除去した。なお、積層体の作製及び支持体の分離については、実施例1~3と同様の条件にて行った。実施例4~12では、混合溶液を調製するために、2-(メチルアミノ)エタノール(MMA)、モノエタノールアミン(MEA)、2-(2-アミノエトキシ)エタノール(DGA)、プロピレングリコールモノメチルエーテル(PGME)、N-メチル-2-ピロリドン(NMP)、N-エチル-2-ピロリドン(NEP)及びジメチルスルホキシド(DMSO)を用いた。
2 ダイシングテープ
3 ダイシングフレーム(枠部)
4 ノズル
7 ノズル
10 接着層
11 分離層
Claims (16)
- 基板と、接着層と、光を吸収することにより変質する分離層と、支持体とをこの順番に積層してなる積層体を処理する処理方法であって、
上記分離層に光を照射して変質させ、上記積層体から上記支持体を除去した後に、上記分離層を除去する剥離液を上記分離層に塗布して、上記分離層を除去する分離層除去工程と、
上記接着層を溶解する溶解液を上記接着層に塗布して、上記接着層を溶解させる接着層溶解工程とを含むことを特徴とする処理方法。 - 上記分離層除去工程と上記接着層溶解工程との間に、上記分離層除去工程後に上記接着層上に残存する上記剥離液を除去する洗浄液を塗布する洗浄工程をさらに含むことを特徴とする請求項1に記載の処理方法。
- 上記洗浄工程と上記接着層溶解工程との間に、上記接着層を乾燥させる乾燥工程を含むことを特徴とする請求項2に記載の処理方法。
- 上記剥離液は上記接着層を溶解させない材料からなることを特徴とする請求項1~3のいずれか一項に記載の処理方法。
- 上記剥離液はアルカリ性であることを特徴とする請求項4に記載の処理方法。
- 上記剥離液はアミン系化合物であることを特徴とする請求項5に記載の処理方法。
- 上記アミン系化合物は、脂肪族アミン、脂環式アミン、芳香族アミン、及び複素環式アミンからなる群より選択される少なくとも1種のアミン系化合物であることを特徴とする請求項6に記載の処理方法。
- 上記基板において、上記接着層が形成されている面とは反対側の面にダイシングテープが接着されており、上記分離層除去工程の前に、上記ダイシングテープの上記基板が接着されている側の面における、上記基板が接着されていない露出面に保護膜を形成する保護膜形成工程をさらに含むことを特徴とする請求項1~7のいずれか一項に記載の処理方法。
- 上記保護膜は、上記剥離液に難溶または不溶な材料からなることを特徴とする請求項8に記載の処理方法。
- 上記材料が水溶性であることを特徴とする請求項9に記載の処理方法。
- 上記保護膜の厚さは0.1μm~5μmであることを特徴とする請求項8~10のいずれか一項に記載の処理方法。
- 上記ダイシングテープは、その外周に枠部を備えており、上記保護膜形成工程において、上記露出面、及び上記ダイシングテープと上記枠部との境界面に上記保護膜を形成することを特徴とする請求項8~11のいずれか一項に記載の処理方法。
- 上記分離層除去工程において、上記露出面に上記剥離液が付着するのを防ぐ保護液を供給しながら、上記剥離液を上記分離層に塗布することを特徴とする請求項8~11のいずれか一項に記載の処理方法。
- 上記基板において、上記接着層が形成されている面とは反対側の面にダイシングテープが接着されており、上記分離層除去工程の前に、上記ダイシングテープの上記基板が接着されている側の面における、上記基板が接着されていない露出面に、上記剥離液に不溶な材料を含む保護膜を形成する第1の保護膜形成工程と、
上記洗浄工程と上記接着層溶解工程との間に、上記露出面に上記溶解液に不溶な材料を含む保護膜を形成する第2の保護膜形成工程とを含むことを特徴とする請求項2に記載の処理方法。 - 基板と、接着層と、光を吸収することにより変質する分離層と、支持体とをこの順番に積層してなる積層体を処理する処理装置であって、
上記分離層に光を照射して変質させ、上記積層体から上記支持体を除去した後に、上記分離層を除去する剥離液を上記分離層に塗布して、上記分離層を除去する分離層除去手段と、
上記接着層を溶解する溶解液を上記接着層に塗布して、上記接着層を溶解させる接着層溶解手段とを含むことを特徴とする処理装置。 - 上記基板において、上記接着層が形成されている面とは反対側の面にダイシングテープが接着されており、上記分離層除去手段による上記剥離液の塗布前に、上記ダイシングテープの上記基板が接着されている側の面における、上記基板が接着されていない露出面に保護膜を形成する保護膜形成手段とを含むことを特徴とする請求項15に記載の処理装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013557442A JP5680229B2 (ja) | 2012-02-07 | 2013-01-11 | 処理方法及び処理装置 |
KR1020147024922A KR101511005B1 (ko) | 2012-02-07 | 2013-01-11 | 처리 방법 및 처리 장치 |
US14/376,772 US9352542B2 (en) | 2012-02-07 | 2013-01-11 | Processing method and processing apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012024472 | 2012-02-07 | ||
JP2012-024472 | 2012-02-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013118536A1 true WO2013118536A1 (ja) | 2013-08-15 |
Family
ID=48947305
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2013/050468 WO2013118536A1 (ja) | 2012-02-07 | 2013-01-11 | 処理方法及び処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9352542B2 (ja) |
JP (1) | JP5680229B2 (ja) |
KR (1) | KR101511005B1 (ja) |
TW (1) | TWI510369B (ja) |
WO (1) | WO2013118536A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015098565A (ja) * | 2013-11-20 | 2015-05-28 | 東京応化工業株式会社 | 処理方法 |
JP2017144615A (ja) * | 2016-02-16 | 2017-08-24 | 東京応化工業株式会社 | 積層体、積層体の製造方法、及び基板の処理方法 |
JP2019204832A (ja) * | 2018-05-22 | 2019-11-28 | ボンドテック株式会社 | 部品実装システム、基板接合システム、部品実装方法および基板接合方法 |
JP2020070394A (ja) * | 2018-11-01 | 2020-05-07 | 株式会社東芝 | 剥離液、剥離方法、及び電子部品の製造方法 |
JP2020191429A (ja) * | 2019-05-24 | 2020-11-26 | 東京応化工業株式会社 | 基板洗浄方法、基板洗浄装置及び基板洗浄用キット |
WO2023037660A1 (ja) * | 2021-09-13 | 2023-03-16 | 株式会社Screenホールディングス | 基板処理方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015118991A1 (de) * | 2015-11-05 | 2017-05-11 | Ev Group E. Thallner Gmbh | Verfahren zur Behandlung von Millimeter- und/oder Mikrometer- und/oder Nanometerstrukturen an einer Oberfläche eines Substrats |
KR20180069185A (ko) | 2016-12-14 | 2018-06-25 | 삼성전자주식회사 | 기판 가공 방법 및 접착층 세정 조성물 |
US10276440B2 (en) * | 2017-01-19 | 2019-04-30 | Honeywell International Inc. | Removable temporary protective layers for use in semiconductor manufacturing |
JP6927619B2 (ja) * | 2018-01-19 | 2021-09-01 | エムティーアイ カンパニー, リミテッドMti Co., Ltd. | ダイシング工程用保護コーティング剤剥離用剥離剤 |
TWI797154B (zh) * | 2018-01-31 | 2023-04-01 | 日商三星鑽石工業股份有限公司 | 膜剝離機構及基板裂斷系統 |
JP7227758B2 (ja) * | 2018-05-31 | 2023-02-22 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP7204389B2 (ja) * | 2018-09-18 | 2023-01-16 | 株式会社ディスコ | テープ貼着装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10125931A (ja) * | 1996-08-27 | 1998-05-15 | Seiko Epson Corp | 薄膜素子の転写方法,薄膜素子,薄膜集積回路装置,アクティブマトリクス基板および液晶表示装置 |
JP2004296935A (ja) * | 2003-03-27 | 2004-10-21 | Sharp Corp | 半導体装置の製造方法 |
JP2004322168A (ja) * | 2003-04-25 | 2004-11-18 | Disco Abrasive Syst Ltd | レーザー加工装置 |
JP2006140311A (ja) * | 2004-11-12 | 2006-06-01 | Tokyo Ohka Kogyo Co Ltd | レーザーダイシング用保護膜剤及び該保護膜剤を用いたウエーハの加工方法 |
JP2009095962A (ja) * | 2007-10-19 | 2009-05-07 | Seiko Epson Corp | 薄膜半導体装置の製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5476566A (en) * | 1992-09-02 | 1995-12-19 | Motorola, Inc. | Method for thinning a semiconductor wafer |
EP1758169A3 (en) | 1996-08-27 | 2007-05-23 | Seiko Epson Corporation | Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same |
JPH10126931A (ja) * | 1996-10-15 | 1998-05-15 | Asahi Electric Works Ltd | 電線引留クランプ |
US6127199A (en) | 1996-11-12 | 2000-10-03 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
USRE38466E1 (en) | 1996-11-12 | 2004-03-16 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
JP3821274B2 (ja) | 2001-09-11 | 2006-09-13 | 洋太郎 畑村 | 基板の貼り合わせ装置、並びに貼り合わせ基板及び電子部品の製造方法 |
JP4565804B2 (ja) * | 2002-06-03 | 2010-10-20 | スリーエム イノベイティブ プロパティズ カンパニー | 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置 |
JP2004188475A (ja) | 2002-12-13 | 2004-07-08 | Disco Abrasive Syst Ltd | レーザー加工方法 |
US7932123B2 (en) * | 2006-09-20 | 2011-04-26 | The Board Of Trustees Of The University Of Illinois | Release strategies for making transferable semiconductor structures, devices and device components |
JP2009096962A (ja) | 2007-10-19 | 2009-05-07 | Jsr Corp | インクジェット印刷用インクおよび電極の製造方法 |
JP5291392B2 (ja) * | 2008-06-18 | 2013-09-18 | 東京応化工業株式会社 | 支持板剥離装置 |
TWI419091B (zh) * | 2009-02-10 | 2013-12-11 | Ind Tech Res Inst | 可轉移的可撓式電子裝置結構及可撓式電子裝置的製造方法 |
US7989266B2 (en) * | 2009-06-18 | 2011-08-02 | Aptina Imaging Corporation | Methods for separating individual semiconductor devices from a carrier |
US8574398B2 (en) * | 2010-05-27 | 2013-11-05 | Suss Microtec Lithography, Gmbh | Apparatus and method for detaping an adhesive layer from the surface of ultra thin wafers |
-
2013
- 2013-01-11 JP JP2013557442A patent/JP5680229B2/ja active Active
- 2013-01-11 WO PCT/JP2013/050468 patent/WO2013118536A1/ja active Application Filing
- 2013-01-11 US US14/376,772 patent/US9352542B2/en active Active
- 2013-01-11 KR KR1020147024922A patent/KR101511005B1/ko active IP Right Grant
- 2013-01-24 TW TW102102658A patent/TWI510369B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10125931A (ja) * | 1996-08-27 | 1998-05-15 | Seiko Epson Corp | 薄膜素子の転写方法,薄膜素子,薄膜集積回路装置,アクティブマトリクス基板および液晶表示装置 |
JP2004296935A (ja) * | 2003-03-27 | 2004-10-21 | Sharp Corp | 半導体装置の製造方法 |
JP2004322168A (ja) * | 2003-04-25 | 2004-11-18 | Disco Abrasive Syst Ltd | レーザー加工装置 |
JP2006140311A (ja) * | 2004-11-12 | 2006-06-01 | Tokyo Ohka Kogyo Co Ltd | レーザーダイシング用保護膜剤及び該保護膜剤を用いたウエーハの加工方法 |
JP2009095962A (ja) * | 2007-10-19 | 2009-05-07 | Seiko Epson Corp | 薄膜半導体装置の製造方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015098565A (ja) * | 2013-11-20 | 2015-05-28 | 東京応化工業株式会社 | 処理方法 |
JP2017144615A (ja) * | 2016-02-16 | 2017-08-24 | 東京応化工業株式会社 | 積層体、積層体の製造方法、及び基板の処理方法 |
JP2019204832A (ja) * | 2018-05-22 | 2019-11-28 | ボンドテック株式会社 | 部品実装システム、基板接合システム、部品実装方法および基板接合方法 |
JP2020070394A (ja) * | 2018-11-01 | 2020-05-07 | 株式会社東芝 | 剥離液、剥離方法、及び電子部品の製造方法 |
CN111142340A (zh) * | 2018-11-01 | 2020-05-12 | 株式会社东芝 | 剥离液、剥离方法及电子部件的制造方法 |
JP7154955B2 (ja) | 2018-11-01 | 2022-10-18 | 株式会社東芝 | 剥離液、剥離方法、及び電子部品の製造方法 |
JP2020191429A (ja) * | 2019-05-24 | 2020-11-26 | 東京応化工業株式会社 | 基板洗浄方法、基板洗浄装置及び基板洗浄用キット |
JP7315376B2 (ja) | 2019-05-24 | 2023-07-26 | 東京応化工業株式会社 | 基板洗浄方法、基板洗浄装置及び基板洗浄用キット |
WO2023037660A1 (ja) * | 2021-09-13 | 2023-03-16 | 株式会社Screenホールディングス | 基板処理方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI510369B (zh) | 2015-12-01 |
JP5680229B2 (ja) | 2015-03-04 |
TW201347996A (zh) | 2013-12-01 |
JPWO2013118536A1 (ja) | 2015-05-11 |
US20150013917A1 (en) | 2015-01-15 |
US9352542B2 (en) | 2016-05-31 |
KR20140114904A (ko) | 2014-09-29 |
KR101511005B1 (ko) | 2015-04-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5680229B2 (ja) | 処理方法及び処理装置 | |
JP6446290B2 (ja) | 接着剤組成物、積層体及び剥離方法 | |
KR101795103B1 (ko) | 적층체의 형성 방법 | |
JP5977532B2 (ja) | 支持体分離方法及び支持体分離装置 | |
JP6216727B2 (ja) | 支持体分離方法 | |
JP2016011361A (ja) | 剥離用組成物及び剥離方法 | |
JP5687862B2 (ja) | 洗浄装置、洗浄方法及び組成物 | |
JP6214182B2 (ja) | 基板の処理方法 | |
JP5982180B2 (ja) | 洗浄装置及び洗浄方法 | |
JP6353662B2 (ja) | 接着剤積層体及びその利用 | |
WO2015029577A1 (ja) | 積層体の製造方法及び積層体 | |
JP6162976B2 (ja) | 基板の処理方法 | |
JP6006569B2 (ja) | 積層体及び積層体の製造方法 | |
JP6114610B2 (ja) | 処理方法及び処理装置 | |
JP6691816B2 (ja) | 封止体の製造方法 | |
JP6055354B2 (ja) | 基板の処理方法 | |
JP6244183B2 (ja) | 処理方法 | |
JP2015046514A (ja) | 積層体の製造方法及び積層体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13747053 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2013557442 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14376772 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20147024922 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 13747053 Country of ref document: EP Kind code of ref document: A1 |