TW201347996A - 處理方法及處理裝置 - Google Patents
處理方法及處理裝置 Download PDFInfo
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- TW201347996A TW201347996A TW102102658A TW102102658A TW201347996A TW 201347996 A TW201347996 A TW 201347996A TW 102102658 A TW102102658 A TW 102102658A TW 102102658 A TW102102658 A TW 102102658A TW 201347996 A TW201347996 A TW 201347996A
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Classifications
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Abstract
本發明係關於一種處理方法,其包含對依序層合晶圓(1)、接著層(10)、分離層(11)與支撐體所成之層合體的分離層(11)照射光使之變質,自層合體去除支撐體後,將去除分離層(11)之剝離液塗佈於分離層(11)而去除分離層(11)之分離層去除步驟,及將溶解接著層(10)之溶解液塗佈於接著層(10)而使接著層(10)溶解之接著層溶解步驟。
Description
本發明係關於處理方法及處理裝置。
作為加工晶圓技術之例,於專利文獻1及2中記載對晶圓照射雷射光線而切開成各晶片之雷射加工技術。該雷射加工技術為防止利用雷射切斷晶圓時產生之碎屑的影響,而在該切斷時於晶圓表面形成保護膜。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本公開專利公報「特開2004-188475號(2004年7月8日公開)」
[專利文獻2]日本公開專利公報「特開2004-322168號(2004年11月18日公開)」
隨著行動電話、數位AV設備及IC卡等高功能化,而使所搭載之半導體矽晶片(以下稱為晶片)小型化及薄板化,因此對封裝內之晶片高積體化的要求增高。為實現封裝內之晶片高積體化,有必要使晶片厚度薄至150μm以下。
然而,成為晶片之基底的半導體晶圓(以下稱為晶圓)由於藉由研磨使其薄化,故其強度變弱,晶圓容易產生龜裂或翹曲。且,因薄化所致之強度變弱難以自動搬送晶圓,因此不得不以人手搬送,使其作業繁雜。
因此,已開發出藉由對經研磨之晶圓貼合稱為支撐體(以下稱為支撐板)之由玻璃或硬質塑膠等所成之板以保持晶圓強度,防止龜裂產生及晶圓翹曲的晶圓支撐系統。由於藉由該晶圓支撐系統可維持晶圓強度,故可使薄化晶圓之搬送自動化。
晶圓與支撐板係使用黏著膠帶、熱可塑性樹脂或接著劑等貼合,且在切割晶圓之前自晶圓剝離支撐板。此時,例如晶圓與支撐板之貼合使用黏著膠帶時,係藉由將晶圓自支撐板剝落而剝離,於使用熱可塑性樹脂時,係藉由加熱樹脂使其熔融而剝離,於使用接著劑時,係藉由使用溶解液而剝離。
又,自晶圓剝離支撐板時,依據晶圓之膜厚,會有將晶圓之與接著有支撐板之面為相反側之面貼合切割膠帶等之其他支撐體之情況。晶圓利用切割膠帶予以支撐,藉此即使膜厚較薄且強度較低之情況仍可抑制龜裂
等之產生。
不過,由於晶圓表面在其製造步驟中會有附著污物之情況,故不得不去除該附著物並清潔晶圓表面。尤其,自晶圓剝離介隔接著劑而接著於晶圓上之支撐板時,晶圓表面會殘留接著劑等。且,溶解接著劑時亦會殘留源自接著劑中之填料等之溶解殘留物。而且,在晶圓與支撐板之間形成其他層時,有產生源自各層之殘留物之可能性。
然而,專利文獻1及2中關於不使附著物及溶解殘留物殘存、洗淨晶圓方面,並無任何記載。
因此,強烈要求開發不使附著物及溶解殘留物殘存而效率良好地洗淨晶圓之技術。
本發明係為解決上述課題而完成者,其目的係提供一種可效率良好地洗淨晶圓等基板之處理方法及處理裝置。
為解決上述課題,本發明之處理方法為處理依序層合基板、接著層、藉吸收光而變質之分離層及支撐體而成之層合體之處理方法,其特徵為包含對上述分離層照射光使之變質,自上述層合體去除上述支撐體後,將去除上述分離層之剝離液塗佈於上述分離層,而去除上述分離層之分離層去除步驟,及將溶解上述接著層之溶解液塗佈於上述接著層而使上述接著層溶解之接著層溶解步驟。
且,本發明之處理裝置為處理依序層合基板、接著層、藉吸收光而變質之分離層與支撐體而成之層合體之處理裝置,其特徵為包含下述之分離層去除手段及接著層溶解手段:分離層去除手段,係對上述分離層照射光使之變質,而自上述層合體去除上述支撐體後,將去除上述分離層之剝離液塗佈於上述分離層而去除上述分離層;接著層溶解手段,係將溶解上述接著層之溶解液塗佈於上述接著層,使上述接著層溶解。
依據本發明,自介隔接著層而接著於支撐體之基板剝離支撐體後,可不於基板上產生殘留物而效率良好地洗淨基板。
1‧‧‧晶圓
2‧‧‧切割膠帶
3‧‧‧晶片切割框架(框部)
4‧‧‧噴嘴
7‧‧‧噴嘴
10‧‧‧接著層
11‧‧‧分離層
圖1為顯示本發明第1實施形態之處理方法的處理流程圖。
圖2為顯示本發明第2實施形態之處理方法的處理流程圖。
圖3為顯示改變供給於切割膠帶之露出面的純水量時之露出面的污染程度差之圖。
圖4為顯示改變形成塗佈於切割膠帶的露出面之保護膜之材料量時之露出面的污染程度差之圖。
以下針對本發明第1實施形態加以詳細說明。
本實施形態之處理方法為處理依序層合基板、接著層、藉吸收光而變質之分離層及支撐體而成之層合體之處理方法,其為包含對分離層照射光使之變質,自上述層合體去除上述支撐體後,將去除分離層之剝離液塗佈於分離層而去除分離層之分離層去除步驟,及將溶解接著層之溶解液塗佈於接著層而使接著層溶解之接著層溶解步驟。
本實施形態之處理方法之處理對象的層合體為依序層合晶圓1、接著層10、藉吸收光而變質之分離層11與支撐體而成者。以下參照圖1針對本實施形態加以說明。圖1為顯示本發明第1實施形態之處理方法的處理流程圖。
如圖1中之(a)所示,本實施形態中,對上述層合體自支撐體側照射光使分離層11變質,自該層合體去除支撐體後,處理依序層合分離層11、接著層10及晶圓1而成之構造體。支撐體之去除可在與該構造體之處理同一裝置內進行,亦可在其他裝置內去除支撐體後,搬送到處理構造體之裝置中。
晶圓1為成為洗淨處理對象之被處理物,且安裝在下述記載之切割膠帶2上。且,晶圓1為形成有電路(元件)之基板,可使用半導體等過去習知之材質的基板。又,本實施形態之處理方法亦可應用於未安裝切割膠帶2之晶圓1中。
晶圓1亦可進而貼附切割膠帶2。切割膠帶2係用以補強晶圓1之強度而接著於晶圓1之與形成有接著層10之面為相反側之面上。作為切割膠帶2,可使用例如於基底膜上形成黏著層而構成之切割膠帶。至於基底薄膜可使用例如PVC(聚氯乙烯)、聚烯烴或聚丙烯等之樹脂膜。
切割膠帶2比晶圓1之外徑大,將該等接著時成為切割膠帶2之一部分露出於晶圓1之外緣的狀態。且,貼附於晶圓1之切割膠帶2之露出面之更外周,可設置用以防止切割膠帶2彎曲之晶片切割薄膜(框部)3。
支撐體有時亦稱為支撐板,為支撐晶圓1者,且具有光透過性。因此,自層合體外朝向支撐體照光時,該光通過支撐體到達分離層11。且,支撐體未必需使全部光透過,只要是可使分離層11欲吸收(具有所需波長)之光透過即可。
支撐體為支撐晶圓1者,只要是可使特定之光透過即無限制,例如支撐體列舉為由玻璃、矽、丙烯酸系樹脂所成者等。
分離層11係由藉由吸收透過支撐體照射之光而變質之材料所形成之層。本說明書中,所謂使分離層11「變質」意味著成為使分離層11稍承受外力即被破壞之狀態,或與分離層11接觸之層的接著力下降之狀態之現象。且,分離層11之變質可為藉由所吸收之光的能量(發熱性或非發熱性)而可分解、交聯、立體配置產生變化或官能基解離(接著,隨之分離層之硬化、脫氣、收縮或膨脹)等。分離層11之變質係因構成分離層11之材料吸收光之結果而產生。因此。分離層11變質之種類可依據構成分離層11之材料種類而變化
分離層11係設在支撐體中之介隔接著層10而貼合有晶圓1之側之表面上。亦即,分離層11係設置在支撐體與接著層10之間。
分離層11之厚度較好為例如0.05~50μm,更好為0.1~10μm之厚度。若使分離層11之厚度集中在0.05~50μm之範圍內,則藉由短時間之光照射及低能量之光照射,即可使分離層11變質為所需程度。另外,分離層11之厚度就生產性之觀點而言較好集中在1μm以下之範圍。
且,分離層11較好為僅由具有吸收光之構造的材料形成,但在不損及本發明之本質特性之範圍內,亦可添加不具有吸收光之構造的材料,形成分離層11。且,分離層11中之與接著層10對向側之面較好為平坦(未形成凹凸)。據此,可容易地進行分離層11之形成,且即使貼合亦可均一地貼合。
分離層11可如下所示使構成分離層11之材料預先形成為薄膜狀者貼合於支撐體上使用,亦可使用將構成分離層11之材料塗佈於支撐體上並經固化成薄膜狀者。將構成分離層11之材料塗佈於支撐體上之方法可依據構成分離層11之材料種類,自以往習知方法適當選擇。
分離層11亦可為藉由吸收自雷射照射之光而變質者。亦即,為使分離層11變質而照射至分離層11之光亦可為自雷射照射者。發射照射至分離層11之光的雷射之例列舉為YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等固態雷射,色素雷射等液態雷射,CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等氣體雷射、半導體雷射、自由電子雷射等雷射光,或非雷射光等。發射照射至分離層11之光之雷射可依據構成分離層11之材料適當選擇,只要選擇照射可使構成分離層11之材料變質之波長之光的雷射即可。
分離層11亦可含有其重複單位中包含具有光吸收性之構造之聚合物。該聚合物接受光之照射而變質。該聚合物之變質係因上述構造吸收所照射之光而產生。分離層11之聚合物變質之結果為喪失接受光照射前之強度或接著性。因此,藉由施加少許的外力(例如,將支撐體拉起等),可使分離層11被破壞,使支撐體與晶圓1輕易的分離。
具有光吸收性之上述構造為可吸收光且使含有作為重複單位之該構造之聚合物變質之化學構造。該構造為含有由例如經取代或未經取代之苯環、縮合環或雜環所成之共軛π電子系之原子團。更詳細而言,該構造可為卡多(cardo)構造、或存在於上述聚合物側鏈上之二苯甲酮構造、二苯基亞碸構造、二苯基碸構造(雙苯基碸構造)、二苯基構造或二苯基胺構造。
分離層11亦可由無機物組成。分離層11由無機物構成,藉此可藉由吸收光而變質,其結果,喪失掉接受光照射前之強度或接著性。因此,藉由施加少許外力(例如,將支撐體拉起等),即可破壞分離層11,可使支撐體與晶圓1輕易的分離。
上述無機物只要為藉由吸收光而變質之構成即可,例如可適當地使用由金屬、金屬化合物及碳所組成群組選出之一種以上之無機物。所謂金屬化合物意指含金
屬原子之化合物,例如,可為金屬氧化物、金屬氮化物。該種無機物之例示並無限定,但可列舉為例如由金、銀、銅、鐵、鎳、鋁、鈦、鉻、SiO2、SiN、Si3N4、TiN及碳所組成群組選出之一種以上之無機物。又,所謂碳亦為可包含碳之同位素之概念,例如可為鑽石、富勒烯、類鑽石碳、碳奈米管等。
分離層11亦可藉由具有紅外線吸收性之構造的化合物形成。該化合物係藉由吸收紅外線而變質。分離層11於化合物變質之結果,喪失了接受紅外線照射前之強度或接著性。因此,藉由施加少許外力(例如,將支撐板拉起等)即可破壞分離層11,可使支撐體與晶圓1輕易的分離。
具有紅外線吸收性之構造或包含具有紅外線吸收性之構造之化合物可為例如烷類、烯類(乙烯基、反式、順式、亞乙烯、三取代、四取代、共軛、累積多烯(cumulene)、環式)、炔類(單取代、二取代)、單環式芳香族(苯、單取代、二取代、三取代)、醇及酚類(自由OH、分子內氫鍵、分子間氫鍵、飽和二級、飽和三級、不飽和二級、不飽和三級)、乙縮醛、縮酮、脂肪族醚、芳香族醚、乙烯基醚、環氧乙烷環醚、過氧化物醚、酮類、二烷基羰基、芳香族羰基、1,3-二酮之烯醇、鄰-羥基芳基酮、二烷基醛、芳香族醛、碳酸(二聚物、
碳酸陰離子)、甲酸酯、乙酸酯、共軛酯、非共軛酯、芳香族酯、內酯(β-、γ-、δ-)、脂肪族鹽酸鹽、芳香族鹽酸鹽、酸酐(共軛、非共軛、環式、非環式)、一級醯胺、二級醯胺、內醯胺、一級胺(脂肪族、芳香族)、二級胺(脂肪族、芳香族)、三級胺(脂肪族、芳香族)、一級胺鹽、二級胺鹽、三級胺鹽、銨離子、脂肪族腈、芳香族腈、羧醯亞胺、脂肪族異腈、芳香族異腈、異氰酸酯、硫代氰酸酯、脂肪族異硫代氰酸酯、芳香族異硫代氰酸酯、脂肪族硝基化合物、芳香族硝基化合物、硝基胺、亞硝基胺、硝酸酯、亞硝酸酯、亞硝基鍵(脂肪族、芳香族、單體、二聚物)、硫醇及噻吩以及硫醇酸等硫化合物,硫代羰基、亞碸、碸、磺醯氯、一級磺醯胺、二級磺醯胺、硫酸酯、碳-鹵素鍵、Si-A1鍵(A1為H、C、O或鹵素)、P-A2鍵(A2為H、C或O)、或Ti-O鍵。
分離層11亦可由氟碳組成。分離層11藉由以氟碳構成,藉此可藉由吸收光而變質,其結果,喪失了接受光照射前之強度及接著性。因此,藉由施加少許外力(例如,將支撐體拉起等),即可破壞分離層11,可使支撐體與晶圓1輕易的分離。
另外,若就其一觀點而言,構成分離層11之氟碳可利用電漿CVD法較佳地成膜。又,氟碳包含CxFy(全氟碳)及CxHyFz(x、y及z為自然數),但並不限
於該等,可有例如CHF3、CH2F2、C2H2F2、C4F8、C2F6、C5F8等。
且,相對於用以構成分離層11之氟碳,亦可視需要添加氮、氦、氬等惰性氣體、氧、烷類、烯類等烴、及二氧化碳、氫。又,亦可複數種混合該等氣體而使用(氟碳、氫、氮之混合氣體等)。且,分離層11可由單一種氟碳構成,亦可由兩種以上之氟碳構成。
分離層11亦可含有紅外線吸收物質。分離層11藉由含有紅外線吸收物質而構成,可藉由吸收光而變質,其結果,喪失了接受光照射前之強度或接著性。因此,藉由施加少許外力(例如,將支撐體拉起等)即可破壞分離層11,使支撐體與晶圓1輕易的分離。
紅外線吸收物質只要為藉由吸收紅外線而變質之構成即可,可較好地使用例如碳黑、鐵粒子、或鋁粒子。
接著層10係將晶圓1接著固定於支撐體上,同時被覆且保護晶圓1之表面。接著層10較好具有在晶圓1之加工或搬送之際,將晶圓1固定於支撐體,及維持對晶圓1之欲保護面之被覆的接著性及強度者。另一方面,在製造製程後等之晶圓1不需要固定於支撐體上,如圖1中之
(a)般,使支撐體自層合體分離後,較好可自晶圓1輕易的分離或去除者。
形成接著層10之接著劑只要含有具有接著性之樹脂即無特別限制。而且,接著層10亦可包含接著劑以外之填料等。
具有接著性之樹脂可單獨或混合兩種以上使用例如明膠、纖維素、纖維素酯(例如,乙酸纖維素酯、硝基纖維素)、聚酚、聚乙烯丁縮醛、聚乙烯乙縮醛、聚碳酸酯、聚胺基甲酸酯、聚酯、聚原酯、聚乙縮醛、聚乙烯醇、聚乙烯吡咯烷銅、偏氯化乙烯與丙烯腈之共聚物、聚(甲基)丙烯酸酯、聚氯化乙烯、聚矽氧樹脂或含有聚胺基甲酸酯單位之嵌段聚合物等。
填料列舉為例如二氧化矽、氧化鋁、氧化鋅、氧化鈦、氧化鈣、氧化鎂、氧化鐵、氧化錫、氧化銻、鐵素體類、氫氧化鈣、氫氧化鎂、氫氧化鋁、鹼性碳酸鎂、碳酸鈣、碳酸鋅、碳酸鋇、片鈉鋁石(dawsonite)、鋁碳酸鎂(hydrotalcite)、硫酸鈣、硫酸鋇、矽酸鈣、滑石、灰石、雲母、蒙脫土、膨潤土、海泡石(Sepiolite)、依毛礦石(Imogolite)、絹雲母(sericite)、玻璃纖維、玻璃珠、二氧化矽球體、氮化鋁、氮化硼、氮化矽、碳黑、石墨、碳纖維、碳球體、硼酸鋅、各種磁性粉等。
另外,接著劑可使用習知方法,藉混合樹脂與填料而調製。此時,亦可視需要使用以有機溶劑稀釋之
溶液。
有機溶劑可列舉為例如丙酮、甲基乙基酮、環己酮、甲基異戊基酮、2-庚酮等酮類;乙二醇、乙二醇單乙酸酯、二乙二醇、二乙二醇單乙酸酯、丙二醇、丙二醇單乙酸酯、二丙二醇或二丙二醇單乙酸酯之單甲基醚、單乙基醚、單丙基醚、單丁基醚或單苯基醚等之多元醇類及其衍生物;二噁烷等之環式醚類;乳酸甲酯、乳酸乙酯、乙酸甲酯、乙酸乙酯、乙酸丁酯、丙酮酸甲酯、丙酮酸乙酯、甲氧基丙酸甲酯、乙氧基丙酸乙酯等酯類;及萜烯系溶劑等。該等可單獨使用,亦可混合兩種以上使用。
萜烯系溶劑列舉為例如α-蒎烯、樟腦烯(camphene)、蒎烷、香葉烯(myrcene)、二氫香葉烯、p-薄荷烷、3-蒈烯、p-薄荷二烯、α-松油烯(terpinene)、β-松油烯、α-水芹烯(phellandrene)、羅勒烯(ocimene)、檸檬烯(limonene)、p-異丙基甲苯(cymene)、γ-松油烯、萜品油烯(Terpinolene)、1,4-桉油醇(cineol)、1,8-桉油醇、氧化玫瑰(rose oxide)、氧化沉香醇、葑酮(fenchone)、α-環檸檬醛(cyclocitral)、羅勒醇(ocimenol)、四氫沉香醇、沉香醇、四氫目葛醇(tetrahydromugol)、異胡薄荷醇(isopulegol)、二氫沉香醇、異二氫薰衣草、β-環檸檬醛、香茅醛(citronellal)、L-薄荷酮、甲酸沉香酯、二氫松油醇、β-松油醇、薄荷醇、香葉烯醇(myrcenol)、L-薄荷醇、松香芹醇(pinocarveol)、α-松油醇、γ-松油
醇、諾普醇(Nopol)、桃銀娘烯醇(myrtenol)、二氫香芹醇、香茅醇(citronellol)、桃銀娘烯醛(myrtenal)、二氫香芹酮、d-長葉薄荷酮(pulegone)、攏牛兒基乙基醚、甲酸攏牛兒酯、甲酸橙花酯(neryl acetate)、甲酸萜品酯、乙酸異二氫薰衣酯、乙酸萜品酯、乙酸沉香醇(linalyl acetate)、乙酸香葉酯、乙酸冰片酯、丙酸薄荷酯、丙酸沉香酯、橙花醇、香芹醇、紫蘇醇(perillyl alcohol)、攏牛兒醇、藏花醛(safranal)、檸香醛、紫蘇醛、香茅氧基乙醛、羥基香茅醛、馬鞭草烯酮(verbenone)、d-香芹酮、L-香芹酮、辣薄荷酮(piperitone)、辣薄荷烯酮、甲酸香茅酯、乙酸異冰片酯、乙酸薄荷酯、乙酸香茅酯、乙酸香芹酯、乙酸二甲基辛酯、乙酸橙花酯、乙酸長葉薄荷酯、乙酸二氫香芹酯、乙酸諾普酯(nopyl acetate)、乙酸攏牛兒酯、丙酸冰片酯、丙酸橙花酯、丙酸香芹酯、丙酸萜品酯、丙酸香茅酯、丙酸異冰片酯、異丁酸沉香酯、異丁酸橙花酯、丁酸沉香酯、丁酸橙花酯、異丁酸萜品酯、丁酸萜品酯、異丁酸攏牛兒酯、丁酸香茅酯、己酸香茅酯、異戊酸薄荷酯、β-石竹烯(caryophyllene)、雪松烯(cedrene)、沒藥烯(bisabolene)、羥基香茅醇、金合歡醇(farnesol)及異丁酸玫瑰酯等。該等中,基於溶解性觀點,較好為檸檬烯及p-薄荷烷,最好為p-薄荷烷。
參照圖1中之(a)~(f),針對第1實施形態之處理方法之各步驟加以說明。
如圖1中之(a)所示,對層合體照射光使分離層11變質,去除支撐體後,使分離層11露出之方式,將晶圓1載置於例如旋轉杯(未圖示)上。
接著,如圖1中之(b)所示,自噴嘴4將去除分離層11之剝離液塗佈於晶圓1上,去除分離層(分離層去除步驟)。此時,為了使剝離液效率良好地行進遍及分離層11,較好藉由使載置有晶圓1之旋轉杯旋轉,邊旋轉晶圓1邊塗佈剝離液。將剝離液塗佈於分離層11上之樣態並不限於旋轉塗佈,亦可利用噴霧塗佈、狹縫塗佈等各種方法進行塗佈。
此處,塗佈於分離層11之剝離液只要是可去除分離層11之溶液即可,並不需要為亦使接著層10溶解之材料。換言之,剝離液較好為不溶解接著層10之材料,亦即實質上與接著層10不具有相溶性之材料。藉此,更容易剝離分離層11。
如此,由於不考慮接著層10之材質,而可使用可確實溶解分離層11之剝離液,故可確實地去除分離層。其結果,可防止晶圓1上產生分離層11之溶解殘留物。
剝離液更好為顯示鹼性之溶液。顯示鹼性之溶液更好為胺系化合物。作為胺系化合物可使用由一級、二級、三級之脂肪族胺、脂環式胺、芳香族胺或雜環式胺
所組成群組選出之至少一種化合物。
作為一級脂肪族胺列舉為例如單甲醇胺、單乙醇胺(MEA)、單異丙醇胺、乙二胺、2-(2-胺基乙氧基)乙醇(DGA)、2-(2-胺基乙基胺基)乙醇等,二級脂肪族胺列舉為例如2-(甲胺基)乙醇(MMA)、二乙醇胺、亞胺基雙丙基胺、2-乙基胺基乙醇等,三級脂肪族胺列舉為例如三乙醇胺、三異丙醇胺、二乙胺基乙醇等。
又,脂環式胺列舉為例如環己基胺、二環己基胺等。芳香族胺列舉為例如苄基胺、二苄基胺、N-甲基苄基胺等。雜環式胺列舉為例如N-羥基乙基哌啶、1,8-二氮雜雙環[5,4,0]-7-十一碳烯等。該等有機胺類之化合物中,尤其以單乙醇胺、2-(2-胺基乙氧基)乙醇及2-乙胺基乙醇、2-(甲胺基)乙醇(MMA)等烷醇胺較佳。
進而,剝離液亦可與其他溶劑混合使用。可混合於上述剝離液之溶劑列舉為例如γ-丁內酯等之內酯類,丙酮、甲基乙基酮、環己酮、甲基正戊基酮、甲基異戊基酮、2-庚酮等之酮類,乙二醇、二乙二醇、丙二醇、二丙二醇等之多元醇類,乙二醇單乙酸酯、二乙二醇單乙酸酯、丙二醇單乙酸酯或二丙二醇單乙酸酯等之具有酯鍵之化合物的有機溶劑,以及,前述多元醇類或前述具有酯鍵之化合物的單甲基醚、單乙基醚、單丙基醚、單丁基醚等之單烷基醚或單苯基醚等之具有醚鍵之化合物等的多元醇類之衍生物,二噁烷等之環式醚類、乳酸甲酯、乳酸乙酯(EL)、乙酸甲酯、乙酸乙酯、乙酸丁酯、丙酮酸甲
酯、丙酮酸乙酯、甲氧基丙酸甲酯、乙氧基丙酸乙酯等之酯類的有機溶劑,苯甲醚、乙基苄基醚、甲苯基甲基醚、二苯基醚、二苄基醚、苯乙醚、丁基苯基醚、乙基苯、二乙基苯、戊基苯、異丙基苯、甲苯、二甲苯、異丙基苯、均三甲苯等之芳香族系有機溶劑,N-甲基-2-吡咯烷酮(NMP)、N-乙基-2-吡咯烷酮(NEP)、二甲基亞碸(DMSO)等之非質子性有機溶劑。
另外,可混合於上述剝離液中之溶劑,在該等中以由非質子性有機溶劑、多元醇類、具有酯鍵之化合物、或多元醇類之衍生物選出之至少一種較佳,更好為由N-甲基-2-吡咯烷酮(NMP)、N-乙基-2-吡咯烷酮(NEP)、二甲基亞碸(DMSO)、二乙二醇單甲基醚、三乙二醇二甲基醚、二乙二醇二乙基醚、乙二醇單丁基醚、丙二醇單丙基醚、二乙二醇甲基乙基醚、二丙二醇單甲基醚、乙二醇單異丙基醚、乙二醇單異丁基醚、二乙二醇二甲基醚、丙二醇單乙基醚、丙二醇單甲基醚(PGME)、丁二甘醇、丙二醇單甲基醚乙酸酯(PGMEA)或丙二醇單乙基醚乙酸酯選出之至少一種。
前述顯示鹼性之溶液與可混合於前述剝離液中之溶劑之混合比例以重量比計為95:5~5:95,較好為80:20~5:95,更好為8:2~2:8,最好為5:5~2:8。藉由成為上述混合比例,使剝離性、作業性優異。
如圖1中之(b)所示之去除分離層11後,如圖1中之(c)所示,亦可自噴嘴4將去除殘留於接著
層10上之剝離液的洗淨液塗佈於接著層10上(洗淨步驟)。此時,為使洗淨液效率良好地行進遍及接著層10,較好藉由旋轉載置有晶圓1之旋轉杯,邊旋轉晶圓1邊塗佈洗淨液。將洗淨液塗佈於分離層11上之樣態並不限於噴嘴塗佈,亦可以噴霧塗佈、狹縫塗佈之各種方法塗佈。
此處,洗淨液為在去除分離層11後,去除殘留於接著層10及晶圓1上之剝離液。作為洗淨液,只要是可自接著層10及晶圓1上沖洗去除殘留之剝離液之液體即無特別限制,列舉為例如純水、碳數1至6之醇等。
分離層11剝離後,殘留剝離液時,會有例如鹼性剝離液附著於晶圓1上而腐蝕晶圓之虞。本實施形態中,分離層11剝離後藉由以洗淨液洗淨,去除殘留之剝離液,故不會因剝離液而腐蝕晶圓。且,由於去除殘留之剝離液,故之後利用所塗佈之溶解液之接著層10之溶解不會因剝離液而受到阻礙,故亦可提高接著層10之溶解性。
去除分離層11,洗淨殘留的剝離液後,如圖1中之(d)所示,亦可使接著層10乾燥(乾燥步驟)。藉由使接著層10乾燥,可防止洗淨液與形成接著層10之接著劑或後續塗佈之溶解液相互混合。
接著層10之乾燥方法並無特別限制,可為自
然乾燥,亦可使用烘箱或加熱板,亦可吹拂溫風乾燥。再者,亦可旋轉晶圓1,使接著層10旋轉乾燥。
接著,如圖1中之(e)所示,自噴嘴4將溶解接著層10之溶解液塗佈於接著層10上,使接著層10溶解(溶解步驟)。此時,為使溶解液效率良好地行進遍及接著層10上,故較好藉由旋轉載置有晶圓1之旋轉杯,邊旋轉晶圓1邊塗佈溶解液。將溶解液塗佈於接著層10上之樣態並不限於旋轉塗佈,亦可以噴霧塗佈、狹縫塗佈之各種方法塗佈。
此處,塗佈於接著層10上之溶解液只要是可溶解接著層10之溶液即無限制,列舉為例如己烷、庚烷、辛烷、壬烷、甲基辛烷、癸烷、十一烷、十二烷、十三烷等直鏈狀烴、碳數3至15之分支狀烴;攏牛兒醇、橙花醇、沉香醇、檸香醇、香茅醇、p-薄荷烷、o-薄荷烷、m-薄荷烷、二苯基薄荷烷、薄荷醇、異薄荷醇、新薄荷醇、檸檬烯、α-松油烯、β-松油烯、γ-松油烯、α-松油醇、β-松油醇、γ-松油醇、松油烯-1-醇、松油烯-4-醇、1,4-萜品、1,8-萜品、香芹酮、紫羅蘭銅、側柏酮、樟腦、冰片烷、冰片醇(borneol)、降冰片酮、蒎烷、α-蒎烯、β-蒎烯、檜烷、α-側柏酮、β-側柏酮、蒈烷、樟腦、長葉烯、1,4-桉油醇(cineol)、1,8-桉油醇等單萜烯類,松香烷(abietane)、松脂等二萜烯類等環狀烴(萜烯類)。
又,剝離液、洗淨液及溶解液係如上述,可自同一噴嘴4噴出,亦可自各不同噴嘴噴出。亦即,亦可噴出各溶液之專用噴嘴依溶液種類使用。
又,噴嘴4係如圖1中之(b)所示,可固定在成為塗佈溶液對象的被處理體中心附近上,朝向被處理體之中心噴出溶液,亦可如圖1中之(e)所示,自被處理體之中心上,邊旋轉移動到被處理體之端部上邊噴出溶液。噴嘴4係藉由邊旋轉移動到被處理體上邊噴出溶液,而可使溶液更確實地遍及被處理體整體。
如圖1中之(e)所示藉由塗佈溶解液,而如圖1中之(f)所示,去除晶圓1上之接著層10。
如上述,塗佈剝離液去除分離層11後,由於塗佈溶解液以去除接著層10,故可防止分離層11及接著層10之各溶解殘留物附著於晶圓1上,可效率良好地洗淨晶圓1。且,相較於如以往般,僅使用溶解接著劑之溶解液,去除接著層10及分離層11之情況,可減少用以去除各層所使用之液體量,同時可縮短去除處理所需之時間。
本實施形態之處理裝置為處理依序層合基板、接著層、藉吸收光而變質之分離層及支撐體而成之層合體之處理裝置,包含下述之分離層去除手段及接著層溶解手段之構成:分離層去除手段係對分離層照光而變質,且自層合
體去除支撐體後,將去除分離層之剝離液塗佈於分離層而去除分離層;接著層溶解手段係將溶解接著層之溶解液塗佈於接著層而使接著層溶解。
亦即,本實施形態之處理裝置由於為於本實施形態之處理方法中使用之裝置之一實施形態,故本實施形態之處理裝置的說明係依據上述本實施形態之處理裝置之說明為準。
例如,作為去除分離層之手段,係如圖1中之(b)所示,可為具備噴出剝離液之噴嘴4者,至於接著層溶解手段係如圖1中之(e)所示,可為具備噴出溶解液之噴嘴4者。另外,本實施形態之處理裝置係如圖1中之(c)所示,可具備噴出洗淨液之噴嘴4之洗淨手段,及如圖1中之(d)所示之具備使接著層10乾燥之乾燥手段。
參照圖2,說明本發明之第2實施形態之處理方法。圖2為顯示第2實施形態之處理方法的處理流程圖。本實施形態中,就包含於切割膠帶2之露出面形成保護膜之保護膜形成步驟方面,與第1實施形態不同。因此,本實施形態中,針對與第1實施形態不同之點加以詳細說明,且針對與第1實施形態相同點則省略詳細說明。且,關於與第1實施形態所用之構件相同之構件,給予同一編號,且
省略其說明。
首先,自支撐體側對層合體照光使分離層11變質,自層合體去除支撐體後,如圖2中之(a)所示,以使分離層11露出之方式將晶圓1載置於例如旋轉杯(未圖示)上。
接著,如圖2中之(b)所示,在去除分離層11之前,自噴嘴7將形成保護膜之材料噴出於切割膠帶2之露出面,形成保護膜(保護膜形成步驟)。保護膜係形成於切割膠帶2之安裝晶圓1側之面中未安裝晶圓1的露出面上。又,噴出形成保護膜之材料的噴嘴亦可為與噴出後述剝離液之噴嘴4同一噴嘴。另外,形成保護膜之材料亦可藉手塗於切割膠帶2之露出面上。
此處,保護膜可防止去除分離層11時塗佈之剝離液附著於切割膠帶2,防止因剝離液而污染切割膠帶2。另外,亦防止塗佈剝離液而溶解之分離層11的溶解物附著於切割膠帶2。
因此,保護膜較好為由難溶或不溶於剝離液中之材料形成。另外,形成保護膜之材料較好為水溶性,至於水溶性材料可使用由丙烯酸系樹脂、乙烯系樹脂、纖維素系樹脂及醯胺系樹脂中選出之至少一種水溶性樹脂。
至於丙烯酸系樹脂列舉為例如以丙烯酸、丙烯酸甲酯、甲基丙烯酸、甲基丙烯酸甲酯、N,N-二甲基丙
烯醯胺、N,N-二甲胺基丙基甲基丙烯醯胺、N,N-二甲胺基丙基丙烯醯胺、N-甲基丙烯醯胺、二丙酮丙烯醯胺、甲基丙烯酸N,N-二甲基胺基乙酯、甲基丙烯酸N,N-二乙胺基乙酯、丙烯酸N,N-二甲胺基乙酯、丙烯醯基嗎啉等單體作為構成成分之聚合物或共聚物。
至於乙烯系樹脂列舉為例如以N-乙烯吡咯烷酮、乙烯基咪唑啶酮、乙酸乙烯酯等單體作為構成成分之聚合物或共聚物。
至於纖維素系樹脂列舉為例如羥基丙基甲基纖維素苯二甲酸酯、羥基丙基甲基纖維素乙酸酯苯二甲酸酯、羥基丙基甲基纖維素六氫苯二甲酸酯、羥基丙基甲基纖維素乙酸酯琥珀酸酯、羥基丙基甲基纖維素、羥基丙基纖維素、羥基乙基纖維素、羥基乙酸酯六氫苯二甲酸酯、羧基甲基纖維素、乙基纖維素、甲基纖維素等。
另外,亦可使用醯胺系樹脂中之水溶性者。其中,以乙烯系樹脂較佳,最好為聚乙烯吡咯烷酮或聚乙烯醇。
該等水溶性樹脂可單獨使用,亦可混合兩種以上使用。上述樹脂中,只要使用形成保護膜之切割膠帶之接著強度相較於保護膜形成前之接著強度之值為50%以下之樹脂即可,更好使用為30%以下之樹脂。
另外,保護膜之厚度較好為0.1μm~5μm,更好為0.2μm~2μm。
又,形成保護膜之材料只要以至少被覆切割
膠帶2之露出面之方式供給即可,但較好以被覆切割膠帶2與切割膠帶3之交界面之方式供給形成保護膜之材料,而於上述交界面形成保護膜。據此,去除分離層時,可防止剝離液或分離層之溶解物附著於切割膠帶2與切割膠帶3之交界面。
又,供給形成保護膜之材料之前,亦可預先對分離層11之表面施以遮蔽處理。藉此,可防止無法充分地於分離層11之表面形成保護膜、以剝離液去除分離層11。
又,供給形成保護膜之材料時,亦可使被處理體旋轉。藉此,可使噴出之上述材料效率良好地遍及於切割膠帶2上。且,對切割膠帶供給上述材料之前,亦可對切割膠帶照射紫外線。據此,可提高上述材料對切割膠帶之潤濕性。
將形成保護膜之材料供給於露出面後,藉由使該材料乾燥而形成保護膜。乾燥可為自然乾燥,但亦可例如邊旋轉被處理體邊乾燥。又,乾燥方法並沒有限制,例如可使用烘箱或加熱板等進行乾燥,亦可吹拂溫風進行乾燥。
接著,如圖2中之(c)所示,自噴嘴4將剝離液塗佈於分離層11,而去除分離層11。此時,切割膠帶2由於以保護膜保護故可防止因剝離液或分離層11之溶解物附著造成之切割膠帶2之污染。
接著,如圖2中之(d)所示,自噴嘴4將洗
淨液塗佈於接著層10,而洗淨接著層10。藉此,去除接著層10上殘留之剝離液。此時,若由水溶性材料形成保護膜,則可藉使用純水等洗淨液,去除殘留之剝離液,同時可自切割膠帶2去除保護膜。
接著,如圖2中之(e)所示,使洗淨後之接著層10乾燥。隨後,雖未圖示,但在本實施形態中,藉由經過圖1中之(e)所記載之溶解步驟,可使接著層10溶解,其結果,可獲得圖1中之(f)所記載之經洗淨之晶圓1。
本實施形態之處理方法中,由於在切割膠帶2之露出面形成保護膜,故使用剝離液時去除分離層11時,可防止剝離液及分離層11之溶解物附著於切割膠帶2上,而污染切割膠帶2。
本實施形態之處理裝置於進一步具備保護膜形成手段方面,與第1實施形態之處理裝置不同,該保護膜形成手段係在基板中與形成有接著層之面為相反側之面上接著切割膠帶,在以分離層去除手段進行剝離液塗佈之前,在切割膠帶之接著有基板之側的面中未接著基板之露出面上形成保護膜。
亦即,本實施形態之處理裝置由於為本實施形態之處理方法中使用之裝置之一實施形態,故本實施形態之處理裝置的說明係依據上述本實施形態之處理裝置的
說明為準。
例如,保護膜形成手段係例如圖2中之(b)所示,可為具備噴出形成保護膜之材料的噴嘴7者。保護膜形成手段亦可進一步具備使形成吐出之保護膜之材料乾燥之烘箱或加熱板等。
本實施形態就塗佈去除剝離液之洗淨液之洗淨步驟,與塗佈溶解接著層10之溶解液之接著層溶解步驟之間,包含在切割膠帶2之露出面上形成含不溶於溶解液之材料的保護膜之步驟方面與第2實施形態不同。因此,本實施形態中,針對與第2實施形態不同之點加以詳細說明,針對與第2實施形態相同之點則省略詳細說明。又,關於與第2實施形態中使用之構件相同之構件,賦予同一編號,且省略其說明。
本實施形態之處理方法中,在分離層去除步驟之前,包含於切割膠帶之露出面形成包含不溶於剝離液之材料的保護膜之第一保護膜形成步驟(相當於第2實施形態之保護膜形成步驟),同時在洗淨步驟與接著層溶解步驟之間,進一步包含於切割膠帶之露出面形成包含不溶於溶解液之材料的保護膜之第二保護膜形成步驟。
於第一保護膜形成步驟中形成之保護膜以水溶性材料形成時,洗淨步驟中使用純水等作為去除剝離液之洗淨液時,該保護膜會溶解於洗淨液中,而去除保護
膜。因此,洗淨步驟之後,會使切割膠帶2之外周部露出。
接著,在使接著層10乾燥之乾燥步驟之後,在第二保護膜形成步驟中,於切割膠帶2之露出面形成包含不溶於溶解液之材料的保護膜。亦即,接著層溶解步驟之前,於切割膠帶2之露出面形成包含不溶於溶解液之材料的保護膜。藉此,可防止隨後之接著層溶解步驟中塗佈之溶解液及接著層之溶解物附著於切割膠帶2之露出面。又,第二保護膜形成步驟中之保護膜可利用與第一保護膜形成步驟(第2實施形態之保護膜形成步驟)相同之方法形成。
第二保護膜形成步驟中形成之保護膜只要含不溶於溶解液之材料即無限制。且,第二保護膜形成步驟中形成之保護膜可由與第一保護膜形成步驟中形成之保護膜相同之材料形成。
又,接著層溶解步驟之後,藉由將溶解保護膜之液體(保護膜若為水溶性,則為純水等)塗佈於保護膜上,而去除保護膜。
本實施形態之處理方法中,分離層11去除前及接著層10溶解前之二者中,由於在切割膠帶2之露出面形成保護膜,故可防止剝離液及分離層11之溶解物,以及溶解液及接著層10之溶解物附著於切割膠帶2而污染切割膠帶2。
又,本實施形態之處理方法中所用之處理裝
置亦包含在本發明範圍中。
本實施形態中,不在切割膠帶2之露出面上形成保護膜,而係邊供給防止剝離液附著之保護液,邊將剝離液塗佈於分離層11之方面與第2實施形態不同。因此,本實施形態中,針對與第2實施形態不同之點加以詳細說明,且針對與第2實施形態相同之點省略詳細說明。又,關於與第2實施形態所用之構件相同之構件,給予同一編號,且省略其說明。
本實施形態之處理方法係在分離層去除步驟中邊防止剝離液附著的保護液供給於切割膠帶之露出面,邊將剝離液塗佈於分離層上。
此處,保護液只要可防止剝離液附著於切割膠帶2之露出面,且不污染切割膠帶2之液體即無特別限制,可使用例如純水、碳數1~6之醇等,較好使用純水。
藉由將剝離液塗佈於分離層11而去除分離層11時,將保護液供給於切割膠帶2之露出面,藉此以保護液保護切割膠帶2之露出面。亦即,本實施形態之處理方法中,邊將保護液供給於切割膠帶2之露出面,邊將剝離液塗佈於分離層11,故可防止因剝離液及分離層11之溶解物污染到切割膠帶2。為更確實地防止切割膠帶2之
露出面的污染,只要增加供給於切割膠帶2之露出面之保護液量即可。
且,亦可邊將保護液供給於切割膠帶2之露出面,邊將溶解液塗佈於接著層10。
又,本實施形態之處理方法所用之處理裝置亦包含於本發明之範圍。
以下顯示實施例,針對本發明之實施形態加以詳細說明。當然,本發明並不限於以下之實施例,毫無疑問的,關於細節可有各種樣態。而且,本發明並不限於上述實施形態,可在申請專利範圍所示之範圍中進行各種變更,適當組合各揭示之技術手段獲得之實施形態亦包含於本發明之技術範圍中。且,本說明書中記載之文獻全文援用於本文供參考。
如下述製作層合體。
於12吋矽晶圓基板(厚度775μm)上,將作為接著劑組成物之TZNR-3007(商品名,東京應化工業股份有限公司製)旋轉塗佈於晶圓基板上,在100℃、160℃及220℃各烘烤3分鐘形成接著層(厚度50μm)。接著,在
流量400sccm、壓力700mTorr、高頻電力2500W及成膜溫度240℃之條件下,以使用C4F8作為反應氣體之CVD法,於支撐體(12吋玻璃基板,厚度700μm)上形成氟碳膜(厚度1μm)作為分離層。
接著,介隔接著層,貼合晶圓基板與具有分離層之支撐體,依序層合晶圓基板、接著層、分離層及支撐體而製作層合體。隨後,研磨該層合體中之晶圓基板(研磨後之厚度為50μm)。
接著,自層合體之支撐體側朝向分離層照射具有532nm波長之YVO4雷射。藉由雷射之照射使分離層變質,自層合體去除支撐體。去除支撐體後,於接著層上殘留有形成變質的分離層之材料。
接著,使用10cc之MMA:PGME=3:7(重量比)之混合溶劑作為剝離液,去除形成分離層的材料。接著,去除形成分離層之材料後,使用192cc之p-薄荷烷作為溶解液,使接著層溶解。用以溶解.去除分離層及接著層之處理時間合計為365秒。其結果,形成分離層之材料並未附著於晶圓基板上,可防止晶圓基板之污染。
為比較用,使以與實施例1相同之條件製作之層合體之分離層變質者,不使用剝離液,而使用700cc之作為溶解液之p-薄荷烷去除分離層及接著層。用以去除分離層及接著層之處理時間合計為840秒。其結果,形成
分離層之材料附著於晶圓基板上。
如此,將剝離液塗佈於分離層去除分離層後,藉由將溶解液塗佈於接著層上使接著層溶解,而縮短用以去除分離層及接著層之時間,同時可藉少量溶解液溶解接著層。且,由於不會因分離層之溶解物而妨礙接著層之溶解,故亦可說是可效率良好地溶解接著層。
調查邊將保護液供給於切割膠帶之露出面,邊將剝離液塗佈於分離層時之切割膠帶的污染程度。
製作依序層合12吋矽晶圓基板(厚度775μm)、接著層(厚度50μm)、分離層(厚度1μm)及支撐體(12吋玻璃基板,厚度700μm)而成之層合體。接著層及分離層係與實施例1同樣製作。以使晶圓之外緣露出之方式將比晶圓基板外徑大的切割膠帶貼合於晶圓基板上,且於切割膠帶之露出面之更外緣設置切割框架。又,由於與實施例1同樣形成層合體,故省略關於層合體製作之詳細說明。
接著,自層合體之支撐體側朝向分離層照射具有532nm波長之YVO4雷射。藉由雷射之照射使分離層變質,自層合體去除支撐體。去除支撐體後,接著層上殘存變質之分離層。
接著,以將純水供給於切割膠帶之露出面之狀態,將10cc之以MMA:PGME=3:7(重量比)之混合溶劑作為剝離液塗佈於分離層上,去除分離層。又,純水係以如下條件(i)~(iii)供給於露出面:(i)塗佈100cc之純水(AQUA-GUARD(100cc)),(ii)塗佈250cc之純水(AQUA-GUARD(250cc)),(iii)塗佈1000cc之純水(AQUA-GUARD(1000cc))。又,比較例(無防護處理)未以純水保護露出面,而將剝離液塗佈於分離層上。去除分離層後,以目視及顯微鏡分別觀察因附著物所致之切割膠帶露出面之污染程度。結果示於圖3。
圖3為顯示改變供給於切割膠帶之露出面的純水量時之露出面污染程度之差的圖。圖3中顯示去除分離層後之露出面之概觀照片及顯微鏡照片。又,自左邊之照片起依序分別顯示比較例、以(i)~(iii)之條件處理之結果。
基於概觀照片及顯微鏡照片,判定切割膠帶之露出面的污染程度。污染程度之判定以1~5之5階段進行評價,1為污染度最高,隨著自1至5之數字增加,表示污染度越低,5顯示污染度最低。
比較例中,去除分離層後,如概觀照片及顯微鏡照片二者所示,雖見到切割膠帶之露出面污染,但實施例之以(i)~(iii)之條件處理時,如概觀照片及顯微
鏡照片二者所示,切割膠帶之露出面的污染獲得改善。且,藉由增多純水量,可更改善露出面之污染。
調查於切割膠帶之露出面形成保護膜後,將剝離液塗佈於分離層時之切割膠帶的污染程度。關於層合體之製作及支撐體之分離係與實施例2同樣進行。
接著,分離支撐體後,於切割膠帶之露出面,塗佈TPF(商品名,東京應化工業股份有限公司製)而製作保護膜。改變TPF之塗佈量,並比較切割膠帶之污染程度。
接著,以下述條件(i)~(iv)於切割膠帶之露出面塗佈所調製之TPF:(i)膜厚0.4μm、(ii)膜厚1.4μm、(iii)膜厚2.6μm、(iv)膜厚0.7μm。關於條件(iv),形成保護膜之同時,於保護膜上供給純水250cc,同時將剝離液塗佈於分離層上。於露出面形成最厚保護膜者為條件(iii),形成最薄者為條件(i)。
接著,對於以條件(i)~(iv)分別形成保護膜之被處理體上,塗佈10cc之MMA:PGME=3:7(重量比)之混合溶劑作為剝離液,去除分離層。接著,對保護膜供給純水,使保護膜溶解。去除分離層後,以目視及顯微鏡分別確認切割膠帶露出面被附著物之污染程度。結果示於圖4。
圖4為顯示改變形成塗佈於切割膠帶露出面之保護膜的材料量時之露出面污染程度差之圖。圖4中,顯示去除分離層後之露出面之概觀照片及顯微鏡照片。且,自左邊之照片起依序分別顯示以(i)~(iv)處理之結果。
基於概觀照片及顯微鏡照片,判定切割膠帶露出面之污染度。污染度之判定係與實施例2同樣進行。
藉由以TPF於切割膠帶之露出面形成保護膜,可防止該露出面之污染,由概觀照片及顯微鏡照片兩者均觀察到。再者,藉由更厚地形成保護膜,直至以顯微鏡照片亦幾乎未見到露出面污染之程度,均可保護露出面。
關於實施例4~12,作為剝離液係使用下表1所示組成之混合溶劑,去除形成分離層之材料。且,關於層合體之製作及支撐體之分離,係使與實施例1~3同樣的條件進行。實施例4~12中,為調製混合溶液,而使用2-(甲胺基)乙醇(MMA)、單乙醇胺(MEA)、2-(2-胺基乙氧基)乙醇(DGA)、丙二醇單甲醚(PGME)、N-甲基-2-吡咯烷酮(NMP)、N-乙基-2-吡咯烷酮(NEP)及二甲基亞碸(DMSO)。
該結果,用以溶解.去除分離層及接著層之處理時間合計為365秒,可防止晶圓基板之污染。且,未見到切割膠帶之露出面污染。
本發明可較好地利用於例如半導體晶圓之製造步驟中。
1‧‧‧晶圓
2‧‧‧切割膠帶
3‧‧‧晶片切割框架(框部)
4‧‧‧噴嘴
10‧‧‧接著層
11‧‧‧分離層
Claims (16)
- 一種處理方法,其為處理依序層合基板、接著層、藉吸收光而變質之分離層及支撐體而成之層合體之處理方法,其特徵為包含對上述分離層照射光使之變質,自上述層合體去除上述支撐體後,將去除上述分離層之剝離液塗佈於上述分離層,而去除上述分離層之分離層去除步驟,及將溶解上述接著層之溶解液塗佈於上述接著層,而使上述接著層溶解之接著層溶解步驟。
- 如請求項1之處理方法,其係在上述分離層去除步驟與上述接著層溶解步驟之間,進而包含在上述分離層去除步驟後塗佈去除殘存於上述接著層上的上述剝離液之洗淨液之洗淨步驟。
- 如請求項2之處理方法,其係在上述洗淨步驟與上述接著層溶解步驟之間,包含使上述接著層乾燥之乾燥步驟。
- 如請求項1~3中任一項之處理方法,其中上述剝離液係由不使上述接著層溶解之材料所成。
- 如請求項4之處理方法,其中上述剝離液為鹼性。
- 如請求項5之處理方法,其中上述剝離液為胺系化合物。
- 如請求項6之處理方法,其中上述胺系化合物為由脂肪族胺、脂環式胺、芳香族胺及雜環式胺所組成群組選出之至少一種胺系化合物。
- 如請求項1~3中任一項之處理方法,其係進而包含於上述基板中,於與形成有上述接著層之面為相反側之面接著切割膠帶,在上述分離層去除步驟之前,於上述切割膠帶之接著著上述基板側的面中未接著上述基板之露出面形成保護膜之保護膜形成步驟。
- 如請求項8之處理方法,其中上述保護膜係由難溶或不溶於上述剝離液之材料所成。
- 如請求項9之處理方法,其中上述材料為水溶性。
- 如請求項8之處理方法,其中上述保護膜之厚度為0.1μm~5μm。
- 如請求項8之處理方法,其中上述切割膠帶係於其外周具備框部,且在上述保護膜形成步驟中,於上述露出面及上述切割膠帶與上述框部之交界面形成上述保護膜。
- 如請求項8之處理方法,其中上述分離層去除步驟中,係邊供給防止上述剝離液附著於上述露出面之保護液,邊將上述剝離液塗佈於上述分離層。
- 如請求項2之處理方法,其包含在上述基板中,於與形成有上述接著層之面為相反側之面接著切割膠帶,在上述分離層去除步驟之前,於上述切割膠帶之接著著上述基板側的面中未接著上述基板之露出面,形成包含不溶於上述剝離液之材料的保護膜之第一保護膜形成步驟,及在上述洗淨步驟與上述接著層溶解步驟之間,於上述 露出面形成包含不溶於上述溶解液之材料的保護膜之第二保護膜形成步驟。
- 一種處理裝置,其為處理依序層合基板、接著層、藉吸收光而變質之分離層與支撐體而成之層合體之處理裝置,其特徵為包含下述分離層去除手段與接著層溶解手段:分離層去除手段,係對上述分離層照射光使之變質,而自上述層合體去除上述支撐體後,將去除上述分離層之剝離液塗佈於上述分離層,而去除上述分離層;接著層溶解手段,係將溶解上述接著層之溶解液塗佈於上述接著層,使上述接著層溶解。
- 如請求項15之處理裝置,其中包含在上述基板中,於與形成有上述接著層之面為相反側之面接著切割膠帶,且在上述分離層去除手段之上述剝離液塗佈前,於上述切割膠帶之接著著上述基板側的面中未接著上述基板之露出面形成保護膜之保護膜形成手段。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI677543B (zh) * | 2018-01-19 | 2019-11-21 | 南韓商Mti股份有限公司 | 切片工藝用保護性塗層劑的剝離劑 |
TWI797154B (zh) * | 2018-01-31 | 2023-04-01 | 日商三星鑽石工業股份有限公司 | 膜剝離機構及基板裂斷系統 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6244183B2 (ja) * | 2013-11-20 | 2017-12-06 | 東京応化工業株式会社 | 処理方法 |
DE102015118991A1 (de) | 2015-11-05 | 2017-05-11 | Ev Group E. Thallner Gmbh | Verfahren zur Behandlung von Millimeter- und/oder Mikrometer- und/oder Nanometerstrukturen an einer Oberfläche eines Substrats |
JP6649111B2 (ja) * | 2016-02-16 | 2020-02-19 | 東京応化工業株式会社 | 積層体、積層体の製造方法、及び基板の処理方法 |
KR20180069185A (ko) | 2016-12-14 | 2018-06-25 | 삼성전자주식회사 | 기판 가공 방법 및 접착층 세정 조성물 |
US10276440B2 (en) * | 2017-01-19 | 2019-04-30 | Honeywell International Inc. | Removable temporary protective layers for use in semiconductor manufacturing |
JP2019204832A (ja) * | 2018-05-22 | 2019-11-28 | ボンドテック株式会社 | 部品実装システム、基板接合システム、部品実装方法および基板接合方法 |
JP7227758B2 (ja) * | 2018-05-31 | 2023-02-22 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP7204389B2 (ja) * | 2018-09-18 | 2023-01-16 | 株式会社ディスコ | テープ貼着装置 |
JP7154955B2 (ja) * | 2018-11-01 | 2022-10-18 | 株式会社東芝 | 剥離液、剥離方法、及び電子部品の製造方法 |
JP7315376B2 (ja) * | 2019-05-24 | 2023-07-26 | 東京応化工業株式会社 | 基板洗浄方法、基板洗浄装置及び基板洗浄用キット |
JP2023041310A (ja) * | 2021-09-13 | 2023-03-24 | 株式会社Screenホールディングス | 基板処理方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5476566A (en) * | 1992-09-02 | 1995-12-19 | Motorola, Inc. | Method for thinning a semiconductor wafer |
JP4619462B2 (ja) | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
EP1744365B1 (en) | 1996-08-27 | 2009-04-15 | Seiko Epson Corporation | Exfoliating method and transferring method of thin film device |
JPH10126931A (ja) * | 1996-10-15 | 1998-05-15 | Asahi Electric Works Ltd | 電線引留クランプ |
US6127199A (en) | 1996-11-12 | 2000-10-03 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
USRE38466E1 (en) | 1996-11-12 | 2004-03-16 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
JP3821274B2 (ja) | 2001-09-11 | 2006-09-13 | 洋太郎 畑村 | 基板の貼り合わせ装置、並びに貼り合わせ基板及び電子部品の製造方法 |
JP4565804B2 (ja) * | 2002-06-03 | 2010-10-20 | スリーエム イノベイティブ プロパティズ カンパニー | 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置 |
JP2004188475A (ja) | 2002-12-13 | 2004-07-08 | Disco Abrasive Syst Ltd | レーザー加工方法 |
JP4364535B2 (ja) * | 2003-03-27 | 2009-11-18 | シャープ株式会社 | 半導体装置の製造方法 |
JP2004322168A (ja) | 2003-04-25 | 2004-11-18 | Disco Abrasive Syst Ltd | レーザー加工装置 |
JP4571850B2 (ja) | 2004-11-12 | 2010-10-27 | 東京応化工業株式会社 | レーザーダイシング用保護膜剤及び該保護膜剤を用いたウエーハの加工方法 |
KR101430587B1 (ko) * | 2006-09-20 | 2014-08-14 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 전사가능한 반도체 구조들, 디바이스들 및 디바이스 컴포넌트들을 만들기 위한 릴리스 방안들 |
JP2009096962A (ja) | 2007-10-19 | 2009-05-07 | Jsr Corp | インクジェット印刷用インクおよび電極の製造方法 |
JP2009095962A (ja) | 2007-10-19 | 2009-05-07 | Seiko Epson Corp | 薄膜半導体装置の製造方法 |
JP5291392B2 (ja) * | 2008-06-18 | 2013-09-18 | 東京応化工業株式会社 | 支持板剥離装置 |
TWI419091B (zh) * | 2009-02-10 | 2013-12-11 | Ind Tech Res Inst | 可轉移的可撓式電子裝置結構及可撓式電子裝置的製造方法 |
US7989266B2 (en) * | 2009-06-18 | 2011-08-02 | Aptina Imaging Corporation | Methods for separating individual semiconductor devices from a carrier |
US8574398B2 (en) * | 2010-05-27 | 2013-11-05 | Suss Microtec Lithography, Gmbh | Apparatus and method for detaping an adhesive layer from the surface of ultra thin wafers |
-
2013
- 2013-01-11 US US14/376,772 patent/US9352542B2/en active Active
- 2013-01-11 WO PCT/JP2013/050468 patent/WO2013118536A1/ja active Application Filing
- 2013-01-11 JP JP2013557442A patent/JP5680229B2/ja active Active
- 2013-01-11 KR KR1020147024922A patent/KR101511005B1/ko active IP Right Grant
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI677543B (zh) * | 2018-01-19 | 2019-11-21 | 南韓商Mti股份有限公司 | 切片工藝用保護性塗層劑的剝離劑 |
TWI797154B (zh) * | 2018-01-31 | 2023-04-01 | 日商三星鑽石工業股份有限公司 | 膜剝離機構及基板裂斷系統 |
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KR101511005B1 (ko) | 2015-04-10 |
US20150013917A1 (en) | 2015-01-15 |
WO2013118536A1 (ja) | 2013-08-15 |
TWI510369B (zh) | 2015-12-01 |
KR20140114904A (ko) | 2014-09-29 |
US9352542B2 (en) | 2016-05-31 |
JP5680229B2 (ja) | 2015-03-04 |
JPWO2013118536A1 (ja) | 2015-05-11 |
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