JP4534062B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4534062B2 JP4534062B2 JP2006096999A JP2006096999A JP4534062B2 JP 4534062 B2 JP4534062 B2 JP 4534062B2 JP 2006096999 A JP2006096999 A JP 2006096999A JP 2006096999 A JP2006096999 A JP 2006096999A JP 4534062 B2 JP4534062 B2 JP 4534062B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor chip
- film
- wiring
- wiring board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/63—Vias, e.g. via plugs
- H10W70/635—Through-vias
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/10—Arrangements for heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/25—Arrangements for cooling characterised by their materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W42/00—Arrangements for protection of devices
- H10W42/121—Arrangements for protection of devices protecting against mechanical damage
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/69—Insulating materials thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/011—Apparatus therefor
- H10W72/0113—Apparatus for manufacturing die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/0366—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement reinforced, e.g. by fibres, fabrics
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0275—Fibers and reinforcement materials
- H05K2201/029—Woven fibrous reinforcement or textile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
- H10W70/654—Top-view layouts
- H10W70/655—Fan-out layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
- H10W70/654—Top-view layouts
- H10W70/656—Fan-in layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01204—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07231—Techniques
- H10W72/07232—Compression bonding, e.g. thermocompression bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07231—Techniques
- H10W72/07232—Compression bonding, e.g. thermocompression bonding
- H10W72/07233—Ultrasonic bonding, e.g. thermosonic bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07231—Techniques
- H10W72/07236—Soldering or alloying
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
- H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/853—On the same surface
- H10W72/856—Bump connectors and die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/877—Bump connectors and die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/922—Bond pads being integral with underlying chip-level interconnections
- H10W72/9223—Bond pads being integral with underlying chip-level interconnections with redistribution layers [RDL]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/922—Bond pads being integral with underlying chip-level interconnections
- H10W72/9226—Bond pads being integral with underlying chip-level interconnections with via interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/923—Bond pads having multiple stacked layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/942—Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/944—Dispositions of multiple bond pads
- H10W72/9445—Top-view layouts, e.g. mirror arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Wire Bonding (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Priority Applications (16)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006096999A JP4534062B2 (ja) | 2005-04-19 | 2006-03-31 | 半導体装置 |
| US11/406,337 US7521799B2 (en) | 2005-04-19 | 2006-04-19 | Semiconductor device and method of manufacturing the same |
| US12/401,193 US7791204B2 (en) | 2005-04-19 | 2009-03-10 | Semiconductor device and method of manufacturing the same |
| US12/753,521 US8018066B2 (en) | 2005-04-19 | 2010-04-02 | Semiconductor device and method of manufacturing the same |
| US13/183,196 US20110269273A1 (en) | 2005-04-19 | 2011-07-14 | Semiconductor device and method of manufacturing the same |
| US13/367,029 US8314495B2 (en) | 2005-04-19 | 2012-02-06 | Semiconductor device and method of manufacturing the same |
| US13/648,876 US8575757B2 (en) | 2005-04-19 | 2012-10-10 | Semiconductor device and method of manufacturing the same |
| US13/863,241 US8581410B2 (en) | 2005-04-19 | 2013-04-15 | Semiconductor device and method of manufacturing the same |
| US14/044,497 US8822269B2 (en) | 2005-04-19 | 2013-10-02 | Semiconductor device and method of manufacturing the same |
| US14/338,175 US8928147B2 (en) | 2005-04-19 | 2014-07-22 | Semiconductor device and method of manufacturing the same |
| US14/569,423 US9299681B2 (en) | 2005-04-19 | 2014-12-12 | Semiconductor device and method of manufacturing |
| US15/045,978 US9496153B2 (en) | 2005-04-19 | 2016-02-17 | Semiconductor device and method of manufacturing the same |
| US15/241,777 US9576890B2 (en) | 2005-04-19 | 2016-08-19 | Semiconductor device and method of manufacturing the same |
| US15/398,444 US9831166B2 (en) | 2005-04-19 | 2017-01-04 | Semiconductor device |
| US15/796,746 US10283444B2 (en) | 2005-04-19 | 2017-10-27 | Semiconductor device and method of manufacturing the same |
| US16/359,485 US10714415B2 (en) | 2005-04-19 | 2019-03-20 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005121063 | 2005-04-19 | ||
| JP2006096999A JP4534062B2 (ja) | 2005-04-19 | 2006-03-31 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009168196A Division JP5293477B2 (ja) | 2005-04-19 | 2009-07-16 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006324642A JP2006324642A (ja) | 2006-11-30 |
| JP2006324642A5 JP2006324642A5 (https=) | 2009-09-03 |
| JP4534062B2 true JP4534062B2 (ja) | 2010-09-01 |
Family
ID=37233663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006096999A Expired - Fee Related JP4534062B2 (ja) | 2005-04-19 | 2006-03-31 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (15) | US7521799B2 (https=) |
| JP (1) | JP4534062B2 (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8890001B2 (en) | 2012-01-27 | 2014-11-18 | Kyocera Slc Technologies Corporation | Wiring board and mounting structure using the same |
| US8957321B2 (en) | 2011-09-26 | 2015-02-17 | Kyocera Slc Technologies Corporation | Printed circuit board, mount structure thereof, and methods of producing these |
Families Citing this family (71)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4534062B2 (ja) | 2005-04-19 | 2010-09-01 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| KR101464008B1 (ko) * | 2006-12-05 | 2014-11-20 | 스미또모 베이크라이트 가부시키가이샤 | 반도체 패키지, 코어층 재료, 빌드업층 재료 및 시일링 수지 조성물 |
| JP5018182B2 (ja) * | 2007-03-30 | 2012-09-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| TWI416673B (zh) * | 2007-03-30 | 2013-11-21 | 住友電木股份有限公司 | 覆晶半導體封裝用之接續構造、增層材料、密封樹脂組成物及電路基板 |
| US8258620B2 (en) * | 2007-08-10 | 2012-09-04 | Sanyo Electric Co., Ltd. | Circuit device, method of manufacturing the circuit device, device mounting board and semiconductor module |
| US20100043694A1 (en) * | 2008-08-20 | 2010-02-25 | Patel Gordhanbhai N | Tamper evident indicating devices |
| US20100044093A1 (en) * | 2008-08-25 | 2010-02-25 | Wilinx Corporation | Layout geometries for differential signals |
| KR101627574B1 (ko) * | 2008-09-22 | 2016-06-21 | 쿄세라 코포레이션 | 배선 기판 및 그 제조 방법 |
| CN102047404B (zh) * | 2008-12-16 | 2013-07-10 | 松下电器产业株式会社 | 半导体装置和倒装芯片安装方法及倒装芯片安装装置 |
| JPWO2010086952A1 (ja) * | 2009-01-30 | 2012-07-26 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| US9420707B2 (en) | 2009-12-17 | 2016-08-16 | Intel Corporation | Substrate for integrated circuit devices including multi-layer glass core and methods of making the same |
| US8207453B2 (en) | 2009-12-17 | 2012-06-26 | Intel Corporation | Glass core substrate for integrated circuit devices and methods of making the same |
| US8381965B2 (en) | 2010-07-22 | 2013-02-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermal compress bonding |
| US8946904B2 (en) * | 2010-08-27 | 2015-02-03 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Substrate vias for heat removal from semiconductor die |
| US8104666B1 (en) | 2010-09-01 | 2012-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermal compressive bonding with separate die-attach and reflow processes |
| JP5581933B2 (ja) * | 2010-09-22 | 2014-09-03 | ソニー株式会社 | パッケージ基板及びこれを用いたモジュール並びに電気・電子機器 |
| US8177862B2 (en) * | 2010-10-08 | 2012-05-15 | Taiwan Semiconductor Manufacturing Co., Ltd | Thermal compressive bond head |
| US20120090883A1 (en) * | 2010-10-13 | 2012-04-19 | Qualcomm Incorporated | Method and Apparatus for Improving Substrate Warpage |
| CN102034721B (zh) * | 2010-11-05 | 2013-07-10 | 南通富士通微电子股份有限公司 | 芯片封装方法 |
| CN102034720B (zh) | 2010-11-05 | 2013-05-15 | 南通富士通微电子股份有限公司 | 芯片封装方法 |
| US8643154B2 (en) * | 2011-01-31 | 2014-02-04 | Ibiden Co., Ltd. | Semiconductor mounting device having multiple substrates connected via bumps |
| JP5853389B2 (ja) * | 2011-03-28 | 2016-02-09 | ソニー株式会社 | 半導体装置及び半導体装置の製造方法。 |
| JP2012256675A (ja) * | 2011-06-08 | 2012-12-27 | Shinko Electric Ind Co Ltd | 配線基板、半導体装置及びその製造方法 |
| TWI473551B (zh) * | 2011-07-08 | 2015-02-11 | 欣興電子股份有限公司 | 封裝基板及其製法 |
| US20130026660A1 (en) * | 2011-07-29 | 2013-01-31 | Namics Corporation | Liquid epoxy resin composition for semiconductor encapsulation, and semiconductor device using the same |
| JP5820673B2 (ja) | 2011-09-15 | 2015-11-24 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
| US8633588B2 (en) * | 2011-12-21 | 2014-01-21 | Mediatek Inc. | Semiconductor package |
| WO2013101243A1 (en) | 2011-12-31 | 2013-07-04 | Intel Corporation | High density package interconnects |
| US9257276B2 (en) * | 2011-12-31 | 2016-02-09 | Intel Corporation | Organic thin film passivation of metal interconnections |
| US8497579B1 (en) * | 2012-02-16 | 2013-07-30 | Chipbond Technology Corporation | Semiconductor packaging method and structure thereof |
| WO2013133827A1 (en) | 2012-03-07 | 2013-09-12 | Intel Corporation | Glass clad microelectronic substrate |
| KR101382811B1 (ko) * | 2012-03-14 | 2014-04-08 | 엘지이노텍 주식회사 | 인쇄회로기판 및 그의 제조 방법 |
| US9001520B2 (en) | 2012-09-24 | 2015-04-07 | Intel Corporation | Microelectronic structures having laminated or embedded glass routing structures for high density packaging |
| US9615453B2 (en) | 2012-09-26 | 2017-04-04 | Ping-Jung Yang | Method for fabricating glass substrate package |
| US10622310B2 (en) | 2012-09-26 | 2020-04-14 | Ping-Jung Yang | Method for fabricating glass substrate package |
| JP2015038911A (ja) * | 2012-09-27 | 2015-02-26 | イビデン株式会社 | プリント配線板及びプリント配線板の製造方法 |
| EP2743972A1 (en) * | 2012-12-17 | 2014-06-18 | Imec | Method for bonding semiconductor substrates and devices obtained thereby |
| JP5941847B2 (ja) * | 2013-01-17 | 2016-06-29 | 信越化学工業株式会社 | シリコーン・有機樹脂複合積層板及びその製造方法、並びにこれを使用した発光半導体装置 |
| JP2014168007A (ja) * | 2013-02-28 | 2014-09-11 | Kyocer Slc Technologies Corp | 配線基板およびその製造方法 |
| TWI524487B (zh) * | 2013-03-06 | 2016-03-01 | 穩懋半導體股份有限公司 | 結合基板通孔與金屬凸塊之半導體晶片之製程方法 |
| US9704829B2 (en) | 2013-03-06 | 2017-07-11 | Win Semiconductor Corp. | Stacked structure of semiconductor chips having via holes and metal bumps |
| WO2014174827A1 (ja) * | 2013-04-26 | 2014-10-30 | 株式会社デンソー | 多層基板、多層基板を用いた電子装置、多層基板の製造方法、基板、および基板を用いた電子装置 |
| US20150101846A1 (en) * | 2013-10-14 | 2015-04-16 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board and method of manufacturing the same |
| KR101548816B1 (ko) * | 2013-11-11 | 2015-08-31 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조방법 |
| US9799626B2 (en) * | 2014-09-15 | 2017-10-24 | Invensas Corporation | Semiconductor packages and other circuit modules with porous and non-porous stabilizing layers |
| KR102411998B1 (ko) * | 2015-06-25 | 2022-06-22 | 삼성전기주식회사 | 회로 기판 및 그 제조방법 |
| KR102458034B1 (ko) | 2015-10-16 | 2022-10-25 | 삼성전자주식회사 | 반도체 패키지, 반도체 패키지의 제조방법, 및 반도체 모듈 |
| JP2017108070A (ja) * | 2015-12-11 | 2017-06-15 | 新光電気工業株式会社 | 配線基板、半導体装置及び配線基板の製造方法 |
| US9812446B2 (en) * | 2016-03-30 | 2017-11-07 | Toyota Motor Engineering & Manufacturing North America, Inc. | Electronic apparatus with pocket of low permittivity material to reduce electromagnetic interference |
| JP6751910B2 (ja) | 2016-10-05 | 2020-09-09 | パナソニックIpマネジメント株式会社 | 多層プリント配線板、多層プリント配線板の製造方法 |
| US11276667B2 (en) * | 2016-12-31 | 2022-03-15 | Intel Corporation | Heat removal between top and bottom die interface |
| US20180226271A1 (en) * | 2017-01-31 | 2018-08-09 | Skyworks Solutions, Inc. | Control of under-fill using a film during fabrication for a dual-sided ball grid array package |
| DE102017205247A1 (de) * | 2017-03-28 | 2018-10-04 | Robert Bosch Gmbh | Elektronikmodul |
| CA3145014C (en) | 2017-05-15 | 2025-07-08 | Apex Industrial Technologies Llc | SET OF MOTORIZED DOORS WITH SECURITY FEATURES FOR HEATED CABINET |
| KR20190018812A (ko) | 2017-08-16 | 2019-02-26 | 삼성전기주식회사 | 반도체 패키지와 이를 구비하는 전자 기기 |
| DE112018006764T5 (de) * | 2018-01-05 | 2020-09-10 | Sony Semiconductor Solutions Corporation | Halbleitervorrichtung |
| CN108649023B (zh) * | 2018-03-28 | 2020-03-03 | 宁波市鄞州路麦电子有限公司 | 一种引线框架及其制备方法 |
| JP7139862B2 (ja) * | 2018-10-15 | 2022-09-21 | 株式会社デンソー | 半導体装置 |
| JP7225787B2 (ja) * | 2018-12-25 | 2023-02-21 | Tdk株式会社 | 半導体ic内蔵回路基板及びその製造方法 |
| JP7163205B2 (ja) * | 2019-01-18 | 2022-10-31 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| KR102764370B1 (ko) * | 2019-12-26 | 2025-02-07 | 삼성전자주식회사 | 반도체 패키지 |
| US20230095332A1 (en) * | 2020-03-17 | 2023-03-30 | Sony Semiconductor Solutions Corporation | Imaging element and semiconductor chip |
| US20220069489A1 (en) * | 2020-08-28 | 2022-03-03 | Unimicron Technology Corp. | Circuit board structure and manufacturing method thereof |
| US11545425B2 (en) * | 2020-10-08 | 2023-01-03 | Qualcomm Incorporated | Substrate comprising interconnects embedded in a solder resist layer |
| JP7566652B2 (ja) * | 2021-02-02 | 2024-10-15 | キオクシア株式会社 | 半導体装置および基板 |
| JP7534243B2 (ja) | 2021-03-19 | 2024-08-14 | Necプラットフォームズ株式会社 | 多層基板、集積型磁性デバイス、電源装置及び多層基板の製造方法 |
| US11823983B2 (en) | 2021-03-23 | 2023-11-21 | Qualcomm Incorporated | Package with a substrate comprising pad-on-pad interconnects |
| CN113709972A (zh) * | 2021-09-27 | 2021-11-26 | 合肥移瑞通信技术有限公司 | 一种电路板及其制造方法、封装件 |
| US12494421B2 (en) * | 2021-10-07 | 2025-12-09 | Nepes Co., Ltd. | Semiconductor package including redistribution structure, and method of manufacturing the same |
| US20240332155A1 (en) * | 2023-03-31 | 2024-10-03 | Intel Corporation | Substrates with a glass core and glass buildup layers |
| KR102737071B1 (ko) * | 2024-01-02 | 2024-12-03 | 엘지이노텍 주식회사 | 회로기판 및 이를 포함하는 반도체 패키지 기판 |
Family Cites Families (84)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5917707A (en) * | 1993-11-16 | 1999-06-29 | Formfactor, Inc. | Flexible contact structure with an electrically conductive shell |
| JPH02278821A (ja) | 1989-04-20 | 1990-11-15 | Fuji Electric Co Ltd | 多結晶シリコンのパターニング方法 |
| JPH02278831A (ja) | 1989-04-20 | 1990-11-15 | Fujitsu Ltd | はんだバンプの形成方法 |
| JP2830504B2 (ja) | 1991-05-16 | 1998-12-02 | 松下電工株式会社 | 半導体装置実装用基板 |
| JPH05251596A (ja) | 1992-03-06 | 1993-09-28 | Sony Corp | フリップチップ方式icチップ実装構造 |
| US5677045A (en) * | 1993-09-14 | 1997-10-14 | Hitachi, Ltd. | Laminate and multilayer printed circuit board |
| JPH07221125A (ja) | 1994-01-27 | 1995-08-18 | Toyota Autom Loom Works Ltd | 半導体部品の実装構造及び絶縁性接着剤 |
| US5753975A (en) | 1994-09-01 | 1998-05-19 | Kabushiki Kaisha Toshiba | Semiconductor device with improved adhesion between titanium-based metal wiring layer and insulation film |
| US6004887A (en) | 1994-09-01 | 1999-12-21 | Kabushiki Kaisha Toshiba | Semiconductor device with improved adhesion between titanium-based metal wiring layer and insulation film |
| JP4295943B2 (ja) | 1994-09-01 | 2009-07-15 | 株式会社東芝 | 半導体装置 |
| JPH08162455A (ja) | 1994-12-06 | 1996-06-21 | Toshiba Corp | 球状電極形成方法および形成装置 |
| JP3274314B2 (ja) | 1995-06-08 | 2002-04-15 | 東芝マイクロエレクトロニクス株式会社 | 樹脂封止型半導体装置及びその製造方法 |
| JPH0982882A (ja) | 1995-09-20 | 1997-03-28 | Nec Corp | マルチチップモジュール |
| US6008071A (en) | 1995-09-20 | 1999-12-28 | Fujitsu Limited | Method of forming solder bumps onto an integrated circuit device |
| US5956605A (en) | 1996-09-20 | 1999-09-21 | Micron Technology, Inc. | Use of nitrides for flip-chip encapsulation |
| JP3629345B2 (ja) | 1996-12-12 | 2005-03-16 | 新光電気工業株式会社 | フリップチップ実装方法 |
| JP2001510944A (ja) | 1997-07-21 | 2001-08-07 | アギラ テクノロジーズ インコーポレイテッド | 半導体フリップチップ・パッケージおよびその製造方法 |
| JP3152209B2 (ja) | 1998-07-07 | 2001-04-03 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| JP2000022040A (ja) | 1998-07-07 | 2000-01-21 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP3116926B2 (ja) | 1998-11-16 | 2000-12-11 | 日本電気株式会社 | パッケージ構造並びに半導体装置、パッケージ製造方法及び半導体装置製造方法 |
| JP2000260817A (ja) | 1999-03-11 | 2000-09-22 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP2000307225A (ja) | 1999-04-21 | 2000-11-02 | Ibiden Co Ltd | 半田印刷用マスク、プリント配線板及びプリント配線板の製造方法 |
| US6184142B1 (en) * | 1999-04-26 | 2001-02-06 | United Microelectronics Corp. | Process for low k organic dielectric film etch |
| JP4275806B2 (ja) | 1999-06-01 | 2009-06-10 | 株式会社ルネサステクノロジ | 半導体素子の実装方法 |
| US6373717B1 (en) * | 1999-07-02 | 2002-04-16 | International Business Machines Corporation | Electronic package with high density interconnect layer |
| EP2265101B1 (en) * | 1999-09-02 | 2012-08-29 | Ibiden Co., Ltd. | Printed circuit board and method of manufacturing printed circuit board |
| JP3334693B2 (ja) | 1999-10-08 | 2002-10-15 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP3367554B2 (ja) | 1999-10-13 | 2003-01-14 | 日本電気株式会社 | フリップチップパッケージ |
| JP2001127095A (ja) | 1999-10-29 | 2001-05-11 | Shinko Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| TW512653B (en) * | 1999-11-26 | 2002-12-01 | Ibiden Co Ltd | Multilayer circuit board and semiconductor device |
| JP3397313B2 (ja) * | 1999-12-20 | 2003-04-14 | 富士通株式会社 | 半導体装置の製造方法及び電子部品の実装方法 |
| US6710446B2 (en) * | 1999-12-30 | 2004-03-23 | Renesas Technology Corporation | Semiconductor device comprising stress relaxation layers and method for manufacturing the same |
| JP2001217514A (ja) * | 2000-02-03 | 2001-08-10 | Denso Corp | 多層配線基板 |
| JP2001230341A (ja) * | 2000-02-18 | 2001-08-24 | Hitachi Ltd | 半導体装置 |
| JP3677429B2 (ja) * | 2000-03-09 | 2005-08-03 | Necエレクトロニクス株式会社 | フリップチップ型半導体装置の製造方法 |
| JP2001274556A (ja) * | 2000-03-23 | 2001-10-05 | Nec Corp | プリント配線板 |
| DE60110794T2 (de) * | 2000-05-26 | 2005-10-06 | Dow Global Technologies, Inc., Midland | Pelyethylene-reiche mischungen mit polypropylene und ihre verwendung |
| TW575632B (en) * | 2000-07-13 | 2004-02-11 | Ngk Spark Plug Co | Paste for filling throughhole and printed wiring board using same |
| JP4447143B2 (ja) * | 2000-10-11 | 2010-04-07 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
| JP4421118B2 (ja) | 2001-01-05 | 2010-02-24 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置製造方法 |
| JP2002232135A (ja) * | 2001-01-30 | 2002-08-16 | Matsushita Electric Ind Co Ltd | 積層用両面回路基板とその製造方法及びそれを用いた多層プリント配線板 |
| JP2002232102A (ja) | 2001-01-31 | 2002-08-16 | Ngk Spark Plug Co Ltd | 配線基板 |
| JP2002261214A (ja) | 2001-03-01 | 2002-09-13 | Toshiba Corp | 半導体装置、半導体装置の製造方法、リッド部材 |
| JP2002270717A (ja) * | 2001-03-12 | 2002-09-20 | Rohm Co Ltd | 半導体装置 |
| JP2002311084A (ja) | 2001-04-11 | 2002-10-23 | Nec Corp | フリップチップlsiおよびフリップチップlsiの解析方法 |
| CN1229002C (zh) * | 2001-07-18 | 2005-11-23 | 松下电器产业株式会社 | 电路形成基板及电路形成基板的制造方法 |
| JP2003051568A (ja) | 2001-08-08 | 2003-02-21 | Nec Corp | 半導体装置 |
| US6861757B2 (en) * | 2001-09-03 | 2005-03-01 | Nec Corporation | Interconnecting substrate for carrying semiconductor device, method of producing thereof and package of semiconductor device |
| US6617683B2 (en) * | 2001-09-28 | 2003-09-09 | Intel Corporation | Thermal performance in flip chip/integral heat spreader packages using low modulus thermal interface material |
| JP2003204171A (ja) | 2002-01-04 | 2003-07-18 | Karentekku:Kk | ビルドアップ多層板 |
| JP2003273482A (ja) | 2002-03-15 | 2003-09-26 | Fujitsu Ltd | 回路基板及びその製造方法及び電子装置 |
| US6815486B2 (en) * | 2002-04-12 | 2004-11-09 | Dow Corning Corporation | Thermally conductive phase change materials and methods for their preparation and use |
| US6794273B2 (en) * | 2002-05-24 | 2004-09-21 | Fujitsu Limited | Semiconductor device and manufacturing method thereof |
| TWI234253B (en) | 2002-05-31 | 2005-06-11 | Fujitsu Ltd | Semiconductor device and manufacturing method thereof |
| US6791839B2 (en) * | 2002-06-25 | 2004-09-14 | Dow Corning Corporation | Thermal interface materials and methods for their preparation and use |
| US7078822B2 (en) * | 2002-06-25 | 2006-07-18 | Intel Corporation | Microelectronic device interconnects |
| JP4393817B2 (ja) * | 2002-08-07 | 2010-01-06 | 東レ・ダウコーニング株式会社 | 熱伝導性充填剤、熱伝導性シリコーンエラストマー組成物および半導体装置 |
| US6936919B2 (en) | 2002-08-21 | 2005-08-30 | Texas Instruments Incorporated | Heatsink-substrate-spacer structure for an integrated-circuit package |
| JP4119205B2 (ja) | 2002-08-27 | 2008-07-16 | 富士通株式会社 | 多層配線基板 |
| JP2004095582A (ja) | 2002-08-29 | 2004-03-25 | Dainippon Printing Co Ltd | コア基板およびその製造方法 |
| JP3822549B2 (ja) | 2002-09-26 | 2006-09-20 | 富士通株式会社 | 配線基板 |
| JP2004134679A (ja) * | 2002-10-11 | 2004-04-30 | Dainippon Printing Co Ltd | コア基板とその製造方法、および多層配線基板 |
| JP3894097B2 (ja) | 2002-10-25 | 2007-03-14 | 松下電器産業株式会社 | 半導体装置 |
| KR100629764B1 (ko) | 2002-10-25 | 2006-09-28 | 마쯔시다덴기산교 가부시키가이샤 | 반도체 디바이스 및 반도체 디바이스를 조립하기 위한수지 바인더 |
| US7059512B2 (en) * | 2002-11-06 | 2006-06-13 | Ricoh Company, Ltd. | Solder alloy material layer composition, electroconductive and adhesive composition, flux material layer composition, solder ball transferring sheet, bump and bump forming process, and semiconductor device |
| JP2004158671A (ja) | 2002-11-07 | 2004-06-03 | Eito Kogyo:Kk | 多層基板およびその製造方法 |
| US6949404B1 (en) * | 2002-11-25 | 2005-09-27 | Altera Corporation | Flip chip package with warpage control |
| JP2004179545A (ja) | 2002-11-28 | 2004-06-24 | Kyocera Corp | 配線基板 |
| JP2004207338A (ja) | 2002-12-24 | 2004-07-22 | Kyocera Corp | 配線基板 |
| JP4149289B2 (ja) * | 2003-03-12 | 2008-09-10 | 株式会社ルネサステクノロジ | 半導体装置 |
| JP4116911B2 (ja) | 2003-03-25 | 2008-07-09 | 富士通株式会社 | 導電性ボールの搭載治具及び導電性ボールの搭載方法 |
| JP3778445B2 (ja) * | 2003-03-27 | 2006-05-24 | 富士通株式会社 | 半導体装置 |
| JP4873827B2 (ja) | 2003-04-28 | 2012-02-08 | イビデン株式会社 | 多層プリント配線板 |
| TWI300261B (en) * | 2003-07-02 | 2008-08-21 | Advanced Semiconductor Eng | Chip package structur |
| TWI229434B (en) * | 2003-08-25 | 2005-03-11 | Advanced Semiconductor Eng | Flip chip stacked package |
| JP2005093556A (ja) | 2003-09-12 | 2005-04-07 | Matsushita Electric Ind Co Ltd | プリント配線基板とその製造方法 |
| US7067902B2 (en) * | 2003-12-02 | 2006-06-27 | International Business Machines Corporation | Building metal pillars in a chip for structure support |
| US20050174738A1 (en) * | 2004-02-06 | 2005-08-11 | International Business Machines Corporation | Method and structure for heat sink attachment in semiconductor device packaging |
| US7119432B2 (en) * | 2004-04-07 | 2006-10-10 | Lsi Logic Corporation | Method and apparatus for establishing improved thermal communication between a die and a heatspreader in a semiconductor package |
| CN100499056C (zh) * | 2004-06-09 | 2009-06-10 | 株式会社瑞萨科技 | 半导体集成电路器件的制造方法 |
| JP2006019636A (ja) * | 2004-07-05 | 2006-01-19 | Renesas Technology Corp | 半導体装置 |
| WO2006065282A1 (en) * | 2004-12-16 | 2006-06-22 | Dow Corning Corporation | Amide-substituted silicones and methods for their preparation and use |
| JP4534062B2 (ja) * | 2005-04-19 | 2010-09-01 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP5035997B2 (ja) | 2008-05-29 | 2012-09-26 | ルネサスエレクトロニクス株式会社 | A/d変換器 |
-
2006
- 2006-03-31 JP JP2006096999A patent/JP4534062B2/ja not_active Expired - Fee Related
- 2006-04-19 US US11/406,337 patent/US7521799B2/en active Active
-
2009
- 2009-03-10 US US12/401,193 patent/US7791204B2/en not_active Expired - Lifetime
-
2010
- 2010-04-02 US US12/753,521 patent/US8018066B2/en not_active Expired - Lifetime
-
2011
- 2011-07-14 US US13/183,196 patent/US20110269273A1/en not_active Abandoned
-
2012
- 2012-02-06 US US13/367,029 patent/US8314495B2/en not_active Expired - Lifetime
- 2012-10-10 US US13/648,876 patent/US8575757B2/en not_active Expired - Fee Related
-
2013
- 2013-04-15 US US13/863,241 patent/US8581410B2/en not_active Expired - Fee Related
- 2013-10-02 US US14/044,497 patent/US8822269B2/en not_active Expired - Lifetime
-
2014
- 2014-07-22 US US14/338,175 patent/US8928147B2/en not_active Expired - Lifetime
- 2014-12-12 US US14/569,423 patent/US9299681B2/en not_active Expired - Lifetime
-
2016
- 2016-02-17 US US15/045,978 patent/US9496153B2/en not_active Expired - Lifetime
- 2016-08-19 US US15/241,777 patent/US9576890B2/en not_active Expired - Lifetime
-
2017
- 2017-01-04 US US15/398,444 patent/US9831166B2/en not_active Expired - Fee Related
- 2017-10-27 US US15/796,746 patent/US10283444B2/en not_active Expired - Lifetime
-
2019
- 2019-03-20 US US16/359,485 patent/US10714415B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8957321B2 (en) | 2011-09-26 | 2015-02-17 | Kyocera Slc Technologies Corporation | Printed circuit board, mount structure thereof, and methods of producing these |
| US8890001B2 (en) | 2012-01-27 | 2014-11-18 | Kyocera Slc Technologies Corporation | Wiring board and mounting structure using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| US7791204B2 (en) | 2010-09-07 |
| US10283444B2 (en) | 2019-05-07 |
| US20190221509A1 (en) | 2019-07-18 |
| US20160358846A1 (en) | 2016-12-08 |
| US20130037947A1 (en) | 2013-02-14 |
| JP2006324642A (ja) | 2006-11-30 |
| US8581410B2 (en) | 2013-11-12 |
| US20060244128A1 (en) | 2006-11-02 |
| US9299681B2 (en) | 2016-03-29 |
| US10714415B2 (en) | 2020-07-14 |
| US20150099331A1 (en) | 2015-04-09 |
| US9496153B2 (en) | 2016-11-15 |
| US20160196987A1 (en) | 2016-07-07 |
| US20110269273A1 (en) | 2011-11-03 |
| US8314495B2 (en) | 2012-11-20 |
| US8822269B2 (en) | 2014-09-02 |
| US9831166B2 (en) | 2017-11-28 |
| US20180068936A1 (en) | 2018-03-08 |
| US8928147B2 (en) | 2015-01-06 |
| US20100187679A1 (en) | 2010-07-29 |
| US9576890B2 (en) | 2017-02-21 |
| US8575757B2 (en) | 2013-11-05 |
| US20120133045A1 (en) | 2012-05-31 |
| US20140327137A1 (en) | 2014-11-06 |
| US7521799B2 (en) | 2009-04-21 |
| US20170117216A1 (en) | 2017-04-27 |
| US20130228913A1 (en) | 2013-09-05 |
| US8018066B2 (en) | 2011-09-13 |
| US20140038361A1 (en) | 2014-02-06 |
| US20090174065A1 (en) | 2009-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4534062B2 (ja) | 半導体装置 | |
| JP4108643B2 (ja) | 配線基板及びそれを用いた半導体パッケージ | |
| CN101226920B (zh) | 使用具有降低布线断开的布线结构的布线衬底的半导体器件 | |
| JP6123836B2 (ja) | 半導体装置の製造方法 | |
| JP2003007916A (ja) | 回路装置の製造方法 | |
| JP2003007922A (ja) | 回路装置の製造方法 | |
| JP4599121B2 (ja) | 電気中継板 | |
| JP5309472B2 (ja) | 半導体装置の製造方法 | |
| JP2001185642A (ja) | 半導体実装用パッケージ基板 | |
| JP2004134821A (ja) | 半導体装置 | |
| JP2003133656A (ja) | 半導体素子の実装構造 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090212 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090716 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20090716 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20091001 |
|
| A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20091023 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091104 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091224 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100406 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100412 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100518 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20100521 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100524 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130625 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4534062 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130625 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140625 Year of fee payment: 4 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |