JP4463493B2 - 表示装置及びその作製方法 - Google Patents

表示装置及びその作製方法 Download PDF

Info

Publication number
JP4463493B2
JP4463493B2 JP2003109613A JP2003109613A JP4463493B2 JP 4463493 B2 JP4463493 B2 JP 4463493B2 JP 2003109613 A JP2003109613 A JP 2003109613A JP 2003109613 A JP2003109613 A JP 2003109613A JP 4463493 B2 JP4463493 B2 JP 4463493B2
Authority
JP
Japan
Prior art keywords
film
insulating film
opening
nitride insulating
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003109613A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004004757A (ja
JP2004004757A5 (enExample
Inventor
昌彦 早川
智史 村上
舜平 山崎
健吾 秋元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2003109613A priority Critical patent/JP4463493B2/ja
Publication of JP2004004757A publication Critical patent/JP2004004757A/ja
Publication of JP2004004757A5 publication Critical patent/JP2004004757A5/ja
Application granted granted Critical
Publication of JP4463493B2 publication Critical patent/JP4463493B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2003109613A 2002-04-15 2003-04-14 表示装置及びその作製方法 Expired - Fee Related JP4463493B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003109613A JP4463493B2 (ja) 2002-04-15 2003-04-14 表示装置及びその作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002111745 2002-04-15
JP2003109613A JP4463493B2 (ja) 2002-04-15 2003-04-14 表示装置及びその作製方法

Publications (3)

Publication Number Publication Date
JP2004004757A JP2004004757A (ja) 2004-01-08
JP2004004757A5 JP2004004757A5 (enExample) 2006-06-01
JP4463493B2 true JP4463493B2 (ja) 2010-05-19

Family

ID=28786654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003109613A Expired - Fee Related JP4463493B2 (ja) 2002-04-15 2003-04-14 表示装置及びその作製方法

Country Status (5)

Country Link
US (3) US7411215B2 (enExample)
JP (1) JP4463493B2 (enExample)
KR (1) KR100968496B1 (enExample)
CN (1) CN100357992C (enExample)
TW (1) TWI270919B (enExample)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6822629B2 (en) * 2000-08-18 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7038239B2 (en) * 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
JP4463493B2 (ja) 2002-04-15 2010-05-19 株式会社半導体エネルギー研究所 表示装置及びその作製方法
JP3989763B2 (ja) 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7242021B2 (en) * 2002-04-23 2007-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display element using semiconductor device
TWI272556B (en) * 2002-05-13 2007-02-01 Semiconductor Energy Lab Display device
TWI263339B (en) * 2002-05-15 2006-10-01 Semiconductor Energy Lab Light emitting device and method for manufacturing the same
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
US7452257B2 (en) * 2002-12-27 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a display device
KR100552975B1 (ko) * 2003-11-22 2006-02-15 삼성에스디아이 주식회사 능동 매트릭스 유기전계발광표시장치 및 그의 제조방법
JP4574158B2 (ja) * 2003-10-28 2010-11-04 株式会社半導体エネルギー研究所 半導体表示装置及びその作製方法
JP2005134755A (ja) * 2003-10-31 2005-05-26 Seiko Epson Corp 電気光学装置及びその製造方法、並びに電子機器
US7274044B2 (en) * 2004-01-26 2007-09-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2005242338A (ja) * 2004-01-26 2005-09-08 Semiconductor Energy Lab Co Ltd 発光装置
KR100615222B1 (ko) * 2004-06-17 2006-08-25 삼성에스디아이 주식회사 전계 발광 디스플레이 장치 및 이의 제조 방법
KR100611652B1 (ko) * 2004-06-28 2006-08-11 삼성에스디아이 주식회사 유기 전계 발광 표시 소자 및 그 제조방법
US8217396B2 (en) 2004-07-30 2012-07-10 Semiconductor Energy Laboratory Co., Ltd. Display device comprising electrode layer contacting wiring in the connection region and extending to pixel region
KR100699998B1 (ko) 2004-09-23 2007-03-26 삼성에스디아이 주식회사 유기 전계 발광 소자 및 그의 제조 방법
KR101125252B1 (ko) * 2004-12-31 2012-03-21 엘지디스플레이 주식회사 폴리 액정 표시 패널 및 그 제조 방법
JP2006251049A (ja) * 2005-03-08 2006-09-21 Toshiba Matsushita Display Technology Co Ltd 表示装置及びアレイ基板
JP2008204966A (ja) * 2005-05-23 2008-09-04 Sharp Corp 半導体装置及びその製造方法並びに液晶表示装置
US7414262B2 (en) * 2005-09-30 2008-08-19 Lexmark International, Inc. Electronic devices and methods for forming the same
US7615495B2 (en) * 2005-11-17 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
JP5135709B2 (ja) * 2006-04-28 2013-02-06 凸版印刷株式会社 薄膜トランジスタ及びその製造方法
JP5170985B2 (ja) 2006-06-09 2013-03-27 株式会社ジャパンディスプレイイースト 液晶表示装置
JP5512931B2 (ja) * 2007-03-26 2014-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5512930B2 (ja) 2007-03-26 2014-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5142831B2 (ja) * 2007-06-14 2013-02-13 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
WO2009052089A1 (en) * 2007-10-15 2009-04-23 E.I. Du Pont De Nemours And Company Backplane structures for solution processed electronic devices
WO2009079327A1 (en) 2007-12-14 2009-06-25 E. I. Du Pont De Nemours And Company Backplane structures for electronic devices
JP2011003522A (ja) 2008-10-16 2011-01-06 Semiconductor Energy Lab Co Ltd フレキシブル発光装置、電子機器及びフレキシブル発光装置の作製方法
KR102246529B1 (ko) 2009-09-16 2021-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20120129592A (ko) * 2011-05-20 2012-11-28 삼성디스플레이 주식회사 평판 표시 장치용 백플레인, 이를 포함하는 평판 표시 장치, 및 그 제조 방법
TWI613822B (zh) * 2011-09-29 2018-02-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5862204B2 (ja) * 2011-10-31 2016-02-16 セイコーエプソン株式会社 電気光学装置および電子機器
KR20130136063A (ko) * 2012-06-04 2013-12-12 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 그 제조 방법
JP6186697B2 (ja) * 2012-10-29 2017-08-30 セイコーエプソン株式会社 有機ｅｌ装置の製造方法、有機ｅｌ装置、電子機器
KR102138280B1 (ko) * 2013-04-30 2020-07-28 삼성디스플레이 주식회사 표시 패널 및 이를 구비하는 표시 장치
JP2017191183A (ja) * 2016-04-12 2017-10-19 株式会社ジャパンディスプレイ 表示装置及びその製造方法
KR102723296B1 (ko) * 2016-12-29 2024-10-28 엘지디스플레이 주식회사 전계발광 표시장치
KR102349279B1 (ko) * 2017-09-08 2022-01-11 삼성디스플레이 주식회사 디스플레이 장치
CN111856832B (zh) * 2019-04-23 2024-09-10 元太科技工业股份有限公司 反射式主动元件阵列基板及其制作方法与反射式显示设备
TWI702457B (zh) * 2019-04-23 2020-08-21 元太科技工業股份有限公司 反射式主動元件陣列基板及其製作方法與反射式顯示裝置及其製作方法
CN111863857B (zh) * 2020-06-30 2024-01-23 京东方科技集团股份有限公司 Led显示基板及其制备方法显示面板
CN114497315A (zh) * 2022-02-15 2022-05-13 中国科学院半导体研究所 Led芯片结构及其制备方法

Family Cites Families (232)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3437863B2 (ja) * 1993-01-18 2003-08-18 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
US3597667A (en) 1966-03-01 1971-08-03 Gen Electric Silicon oxide-silicon nitride coatings for semiconductor devices
JPS606040B2 (ja) 1979-06-07 1985-02-15 日本電気株式会社 集積回路
US4313782A (en) * 1979-11-14 1982-02-02 Rca Corporation Method of manufacturing submicron channel transistors
JPS56120166A (en) * 1980-02-27 1981-09-21 Hitachi Ltd Semiconductor ic device and manufacture thereof
US4400319A (en) 1980-10-03 1983-08-23 Ciba-Geigy Corporation Monoazo pigments containing heterocycles, and high-molecular organic materials dyed therewith
US4409724A (en) 1980-11-03 1983-10-18 Texas Instruments Incorporated Method of fabricating display with semiconductor circuits on monolithic structure and flat panel display produced thereby
US4342617A (en) 1981-02-23 1982-08-03 Intel Corporation Process for forming opening having tapered sides in a plasma nitride layer
DE3146981A1 (de) * 1981-11-26 1983-06-01 Siemens AG, 1000 Berlin und 8000 München Fototransistor in mos-duennschichttechnik, verfahren zu seiner herstellung und verfahren zu seinem betrieb.
US5365079A (en) 1982-04-30 1994-11-15 Seiko Epson Corporation Thin film transistor and display device including same
US4566175A (en) * 1982-08-30 1986-01-28 Texas Instruments Incorporated Method of making insulated gate field effect transistor with a lightly doped drain using oxide sidewall spacer and double implantations
US4447272A (en) * 1982-11-22 1984-05-08 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating MNOS structures utilizing hydrogen ion implantation
US4727044A (en) 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
FR2585167B1 (fr) * 1985-07-19 1993-05-07 Gen Electric Structures conductrices redondantes pour affichages a cristaux liquides commandes par des transistors a effet de champ en couche mince
JPS62130018A (ja) * 1985-12-02 1987-06-12 Hitachi Ltd 半導体電子回路
JPH0740711B2 (ja) 1986-06-20 1995-05-01 キヤノン株式会社 光センサの駆動方法及び画像入力装置
KR100212098B1 (ko) * 1987-09-19 1999-08-02 가나이 쓰도무 반도체 집적회로 장치 및 그 제조 방법과 반도체 집적 회로 장치의 배선기판 및 그 제조 방법
JPH0654774B2 (ja) 1987-11-30 1994-07-20 株式会社東芝 半導体装置及びその製造方法
JPH01156725A (ja) 1987-12-15 1989-06-20 Seiko Epson Corp 表示装置
US4851370A (en) 1987-12-28 1989-07-25 American Telephone And Telegraph Company, At&T Bell Laboratories Fabricating a semiconductor device with low defect density oxide
NL8801379A (nl) * 1988-05-30 1989-12-18 Imec Inter Uni Micro Electr Werkwijze voor het vervaardigen van een dunne-filmtransistor en een dergelijke dunne-filmtransistor.
JPH02234134A (ja) 1989-03-07 1990-09-17 Nec Corp 液晶表示装置用アクティブマトリクス基板
JPH0766946B2 (ja) 1989-03-31 1995-07-19 株式会社東芝 半導体装置及びその製造方法
US5113511A (en) * 1989-06-02 1992-05-12 Atari Corporation System for dynamically providing predicted high/slow speed accessing memory to a processing unit based on instructions
US4951100A (en) 1989-07-03 1990-08-21 Motorola, Inc. Hot electron collector for a LDD transistor
JP3009438B2 (ja) 1989-08-14 2000-02-14 株式会社日立製作所 液晶表示装置
US5191373A (en) * 1989-08-31 1993-03-02 Asahi Kogaku Kogyo Kabushiki Kaisha Display system of a camera selective display system for a camera
JP2714993B2 (ja) 1989-12-15 1998-02-16 セイコーエプソン株式会社 液晶表示装置
US5063378A (en) 1989-12-22 1991-11-05 David Sarnoff Research Center, Inc. Scanned liquid crystal display with select scanner redundancy
JP2622183B2 (ja) * 1990-04-05 1997-06-18 シャープ株式会社 アクティブマトリクス表示装置
DE69127395T2 (de) * 1990-05-11 1998-01-02 Asahi Glass Co Ltd Verfahren zum Herstellen eines Dünnfilm-Transistors mit polykristallinem Halbleiter
US5198685A (en) * 1990-08-01 1993-03-30 Canon Kabushiki Kaisha Photoelectric conversion apparatus with shock-absorbing layer
US5234850A (en) 1990-09-04 1993-08-10 Industrial Technology Research Institute Method of fabricating a nitride capped MOSFET for integrated circuits
DE69126949T2 (de) 1990-11-15 1998-02-12 Canon Kk Verfahren zur Herstellung einer einkristallinen Schicht
KR930009549B1 (ko) * 1990-11-28 1993-10-06 현대전자산업 주식회사 고저항용 다결정 실리콘의 저항치 유지방법
US5424752A (en) 1990-12-10 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Method of driving an electro-optical device
JPH04261017A (ja) * 1991-02-14 1992-09-17 Mitsubishi Electric Corp 薄膜トランジスタアレイ基板の製造方法
US5521107A (en) * 1991-02-16 1996-05-28 Semiconductor Energy Laboratory Co., Ltd. Method for forming a field-effect transistor including anodic oxidation of the gate
JP2794678B2 (ja) * 1991-08-26 1998-09-10 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
US5468987A (en) * 1991-03-06 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US5946561A (en) * 1991-03-18 1999-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JPH0824104B2 (ja) * 1991-03-18 1996-03-06 株式会社半導体エネルギー研究所 半導体材料およびその作製方法
US6562672B2 (en) * 1991-03-18 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
JP3071851B2 (ja) * 1991-03-25 2000-07-31 株式会社半導体エネルギー研究所 電気光学装置
US5680147A (en) 1991-05-20 1997-10-21 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US5280280A (en) 1991-05-24 1994-01-18 Robert Hotto DC integrating display driver employing pixel status memories
US5414442A (en) * 1991-06-14 1995-05-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US5414278A (en) * 1991-07-04 1995-05-09 Mitsushibi Denki Kabushiki Kaisha Active matrix liquid crystal display device
JP2845303B2 (ja) * 1991-08-23 1999-01-13 株式会社 半導体エネルギー研究所 半導体装置とその作製方法
KR960000225B1 (ko) 1991-08-26 1996-01-03 가부시키가이샤 한도오따이 에네루기 겐큐쇼 절연게이트형 반도체장치의 제작방법
US5650338A (en) 1991-08-26 1997-07-22 Semiconductor Energy Laboratory Co., Ltd. Method for forming thin film transistor
US6556257B2 (en) * 1991-09-05 2003-04-29 Sony Corporation Liquid crystal display device
JP3116478B2 (ja) * 1991-10-29 2000-12-11 ソニー株式会社 半導体メモリ装置
US5576655A (en) 1991-11-29 1996-11-19 Fuji Electric Co., Ltd. High-withstand-voltage integrated circuit for driving a power semiconductor device
JP2564725B2 (ja) * 1991-12-24 1996-12-18 株式会社半導体エネルギー研究所 Ｍｏｓ型トランジスタの作製方法
JPH05249478A (ja) 1991-12-25 1993-09-28 Toshiba Corp 液晶表示装置
US5485019A (en) 1992-02-05 1996-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6078316A (en) 1992-03-16 2000-06-20 Canon Kabushiki Kaisha Display memory cache
TW231343B (enExample) * 1992-03-17 1994-10-01 Hitachi Seisakusyo Kk
GB9206086D0 (en) 1992-03-20 1992-05-06 Philips Electronics Uk Ltd Manufacturing electronic devices comprising,e.g.tfts and mims
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
TW223178B (en) 1992-03-27 1994-05-01 Semiconductor Energy Res Co Ltd Semiconductor device and its production method
US5343066A (en) 1992-03-30 1994-08-30 Sony Corporation Semiconductor device and method of manufacturing same
US5674771A (en) 1992-04-20 1997-10-07 Nippon Telegraph And Telephone Corporation Capacitor and method of manufacturing the same
JPH05308128A (ja) 1992-04-30 1993-11-19 Fuji Electric Co Ltd 半導体装置およびその製造方法
US5612254A (en) * 1992-06-29 1997-03-18 Intel Corporation Methods of forming an interconnect on a semiconductor substrate
CN100442532C (zh) * 1992-07-06 2008-12-10 株式会社半导体能源研究所 有源矩阵显示器件
US5808315A (en) 1992-07-21 1998-09-15 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having transparent conductive film
JP3013624B2 (ja) 1992-09-01 2000-02-28 日本電気株式会社 半導体集積回路装置
EP0592063A3 (en) * 1992-09-14 1994-07-13 Toshiba Kk Active matrix liquid crystal display device
US5292677A (en) * 1992-09-18 1994-03-08 Micron Technology, Inc. Reduced mask CMOS process for fabricating stacked capacitor multi-megabit dynamic random access memories utilizing single etch stop layer for contacts
JP2924506B2 (ja) * 1992-10-27 1999-07-26 日本電気株式会社 アクティブマトリックス型液晶表示装置の画素構造
JP3587537B2 (ja) 1992-12-09 2004-11-10 株式会社半導体エネルギー研究所 半導体装置
JP3158749B2 (ja) * 1992-12-16 2001-04-23 ヤマハ株式会社 半導体装置
EP0603866B1 (en) 1992-12-25 2002-07-24 Sony Corporation Active matrix substrate
TW403972B (en) 1993-01-18 2000-09-01 Semiconductor Energy Lab Method of fabricating mis semiconductor device
JP2897095B2 (ja) 1993-02-02 1999-05-31 富士通株式会社 キャパシタの製造方法
JPH06296023A (ja) * 1993-02-10 1994-10-21 Semiconductor Energy Lab Co Ltd 薄膜状半導体装置およびその作製方法
JP3355181B2 (ja) 1993-02-10 2002-12-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5563427A (en) 1993-02-10 1996-10-08 Seiko Epson Corporation Active matrix panel and manufacturing method including TFTs having variable impurity concentration levels
US6413805B1 (en) 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
US5747355A (en) * 1993-03-30 1998-05-05 Semiconductor Energy Laboratory Co., Ltd. Method for producing a transistor using anodic oxidation
US5498562A (en) * 1993-04-07 1996-03-12 Micron Technology, Inc. Semiconductor processing methods of forming stacked capacitors
US6150692A (en) * 1993-07-13 2000-11-21 Sony Corporation Thin film semiconductor device for active matrix panel
US5663077A (en) 1993-07-27 1997-09-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
JPH07142743A (ja) * 1993-09-22 1995-06-02 Sharp Corp 薄膜トランジスタの製造方法
JP3030368B2 (ja) * 1993-10-01 2000-04-10 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US5719065A (en) * 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
US5426315A (en) 1993-10-04 1995-06-20 Motorola Inc. Thin-film transistor having an inlaid thin-film channel region
JPH07135323A (ja) * 1993-10-20 1995-05-23 Semiconductor Energy Lab Co Ltd 薄膜状半導体集積回路およびその作製方法
US5576231A (en) 1993-11-05 1996-11-19 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating an insulated gate field effect transistor with an anodic oxidized gate electrode
SG63572A1 (en) * 1993-11-12 1999-03-30 Seiko Epson Corp Structure and method for mounting semiconductor devices and liquid crystal display
JP3325992B2 (ja) 1994-01-08 2002-09-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5616935A (en) * 1994-02-08 1997-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit having N-channel and P-channel transistors
JPH07273191A (ja) 1994-03-28 1995-10-20 Toyota Motor Corp 半導体装置及びその製造方法
JP3312083B2 (ja) * 1994-06-13 2002-08-05 株式会社半導体エネルギー研究所 表示装置
US5789762A (en) 1994-09-14 1998-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor active matrix circuit
JP3059915B2 (ja) * 1994-09-29 2000-07-04 三洋電機株式会社 表示装置および表示装置の製造方法
JP3097945B2 (ja) 1994-10-03 2000-10-10 シャープ株式会社 反射型液晶表示装置の製造方法
US5635423A (en) 1994-10-11 1997-06-03 Advanced Micro Devices, Inc. Simplified dual damascene process for multi-level metallization and interconnection structure
JP3240858B2 (ja) * 1994-10-19 2001-12-25 ソニー株式会社 カラー表示装置
JPH08181214A (ja) * 1994-12-26 1996-07-12 Nkk Corp 半導体装置
JP2900229B2 (ja) * 1994-12-27 1999-06-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法および電気光学装置
US5814529A (en) 1995-01-17 1998-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor
JP3665095B2 (ja) 1995-01-27 2005-06-29 沖電気工業株式会社 パターン形成方法
TW345654B (en) * 1995-02-15 1998-11-21 Handotai Energy Kenkyusho Kk Active matrix display device
JPH08250743A (ja) * 1995-03-07 1996-09-27 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US5706064A (en) * 1995-03-31 1998-01-06 Kabushiki Kaisha Toshiba LCD having an organic-inorganic hybrid glass functional layer
KR100303134B1 (ko) * 1995-05-09 2002-11-23 엘지.필립스 엘시디 주식회사 액정표시소자및그제조방법.
US6372534B1 (en) * 1995-06-06 2002-04-16 Lg. Philips Lcd Co., Ltd Method of making a TFT array with photo-imageable insulating layer over address lines
US5771110A (en) 1995-07-03 1998-06-23 Sanyo Electric Co., Ltd. Thin film transistor device, display device and method of fabricating the same
KR0171102B1 (ko) * 1995-08-29 1999-03-20 구자홍 액정표시장치 구조 및 제조방법
US5728608A (en) * 1995-10-11 1998-03-17 Applied Komatsu Technology, Inc. Tapered dielectric etch in semiconductor devices
US5917563A (en) 1995-10-16 1999-06-29 Sharp Kabushiki Kaisha Liquid crystal display device having an insulation film made of organic material between an additional capacity and a bus line
JPH09134973A (ja) * 1995-11-07 1997-05-20 Mitsubishi Electric Corp 半導体装置およびその製造方法
TW384412B (en) * 1995-11-17 2000-03-11 Semiconductor Energy Lab Display device
US5847410A (en) 1995-11-24 1998-12-08 Semiconductor Energy Laboratory Co. Semiconductor electro-optical device
US6294799B1 (en) * 1995-11-27 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
US5940732A (en) * 1995-11-27 1999-08-17 Semiconductor Energy Laboratory Co., Method of fabricating semiconductor device
TW309633B (enExample) * 1995-12-14 1997-07-01 Handotai Energy Kenkyusho Kk
KR100192370B1 (ko) 1996-01-10 1999-06-15 구자홍 액정표시장치의 제조방법
KR100386203B1 (ko) 1996-02-29 2003-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전기광학장치및그제조방법
TW334581B (en) 1996-06-04 1998-06-21 Handotai Energy Kenkyusho Kk Semiconductor integrated circuit and fabrication method thereof
JP3302262B2 (ja) * 1996-06-10 2002-07-15 ティーディーケイ株式会社 有機エレクトロ・ルミネッセンス表示装置及びその製造方法
US6037712A (en) * 1996-06-10 2000-03-14 Tdk Corporation Organic electroluminescence display device and producing method thereof
US6288764B1 (en) * 1996-06-25 2001-09-11 Semiconductor Energy Laboratory Co., Ltd. Display device or electronic device having liquid crystal display panel
JP3126661B2 (ja) * 1996-06-25 2001-01-22 株式会社半導体エネルギー研究所 液晶表示装置
JPH1039334A (ja) * 1996-07-24 1998-02-13 Toshiba Corp アレイ基板および液晶表示装置
JP3410296B2 (ja) * 1996-08-02 2003-05-26 シャープ株式会社 液晶表示装置及びその製造方法
JP3284262B2 (ja) * 1996-09-05 2002-05-20 セイコーエプソン株式会社 液晶表示装置及びそれを用いた電子機器
KR100198634B1 (ko) 1996-09-07 1999-06-15 구본준 반도체 소자의 배선구조 및 제조방법
KR100225097B1 (ko) * 1996-10-29 1999-10-15 구자홍 액정표시장치 및 그 제조방법
JP3123450B2 (ja) * 1996-11-26 2001-01-09 日本電気株式会社 半導体装置およびその製造方法
JP3264364B2 (ja) * 1997-01-21 2002-03-11 シャープ株式会社 液晶表示装置の製造方法
JPH10221712A (ja) * 1997-02-04 1998-08-21 Sharp Corp 液晶表示装置の製造方法
JPH10229197A (ja) * 1997-02-17 1998-08-25 Sanyo Electric Co Ltd 薄膜トランジスタ、薄膜トランジスタの製造方法
TW477907B (en) * 1997-03-07 2002-03-01 Toshiba Corp Array substrate, liquid crystal display device and their manufacturing method
JPH10307305A (ja) 1997-03-07 1998-11-17 Toshiba Corp アレイ基板、液晶表示装置及びそれらの製造方法
JPH10268360A (ja) * 1997-03-26 1998-10-09 Semiconductor Energy Lab Co Ltd 表示装置
JP2869721B2 (ja) 1997-05-12 1999-03-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6069443A (en) * 1997-06-23 2000-05-30 Fed Corporation Passive matrix OLED display
JPH1068972A (ja) 1997-07-04 1998-03-10 Semiconductor Energy Lab Co Ltd 電気光学装置
KR100254567B1 (ko) 1997-07-16 2000-05-01 윤종용 반도체 장치의 콘택 플러그 형성 및 절연막 평탄화 방법
JP3599964B2 (ja) * 1997-07-29 2004-12-08 パイオニア株式会社 発光ディスプレイ及びその製造方法
JP3156765B2 (ja) * 1997-08-29 2001-04-16 日本電気株式会社 半導体装置、および半導体装置の製造方法
TW408246B (en) 1997-09-12 2000-10-11 Sanyo Electric Co Semiconductor device and display device having laser-annealed semiconductor element
US6274516B1 (en) * 1997-10-27 2001-08-14 Canon Kabushiki Kaisha Process for manufacturing interlayer insulating film and display apparatus using this film and its manufacturing method
JPH11183929A (ja) * 1997-12-24 1999-07-09 Toshiba Corp 液晶表示素子
JP3980156B2 (ja) * 1998-02-26 2007-09-26 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
JP3941901B2 (ja) * 1998-04-28 2007-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6310066B1 (en) * 1998-04-29 2001-10-30 American Home Products Corp. Antipsychotic indolyl derivatives
KR100289490B1 (ko) 1998-07-01 2001-11-22 박종섭 단차성 절연막을 가지는 반도체 장치의 형성 방법
US6372558B1 (en) * 1998-08-18 2002-04-16 Sony Corporation Electrooptic device, driving substrate for electrooptic device, and method of manufacturing the device and substrate
CN1139837C (zh) * 1998-10-01 2004-02-25 三星电子株式会社 液晶显示器用薄膜晶体管阵列基板及其制造方法
JP2000111952A (ja) * 1998-10-07 2000-04-21 Sony Corp 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
US6274887B1 (en) * 1998-11-02 2001-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US7141821B1 (en) * 1998-11-10 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an impurity gradient in the impurity regions and method of manufacture
US6909114B1 (en) 1998-11-17 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having LDD regions
TW514757B (en) * 1998-11-26 2002-12-21 Seiko Epson Corp Electro-optical device and production method thereof and electronic equipment
JP3424234B2 (ja) * 1998-11-30 2003-07-07 セイコーエプソン株式会社 電気光学装置及びその製造方法
TW413949B (en) * 1998-12-12 2000-12-01 Samsung Electronics Co Ltd Thin film transistor array panels for liquid crystal displays and methods of manufacturing the same
US6306559B1 (en) * 1999-01-26 2001-10-23 Mitsubishi Chemical Corporation Organic electroluminescent device comprising a patterned photosensitive composition and a method for producing same
JP4372943B2 (ja) 1999-02-23 2009-11-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US7821065B2 (en) * 1999-03-02 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same
JP3683463B2 (ja) * 1999-03-11 2005-08-17 シャープ株式会社 アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ
US6306694B1 (en) * 1999-03-12 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Process of fabricating a semiconductor device
US6281552B1 (en) * 1999-03-23 2001-08-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having ldd regions
US6475836B1 (en) 1999-03-29 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TW517260B (en) * 1999-05-15 2003-01-11 Semiconductor Energy Lab Semiconductor device and method for its fabrication
JP3065077B2 (ja) * 1999-05-19 2000-07-12 セイコーエプソン株式会社 半導体装置の製造方法
TW527735B (en) 1999-06-04 2003-04-11 Semiconductor Energy Lab Electro-optical device
JP3844913B2 (ja) * 1999-06-28 2006-11-15 アルプス電気株式会社 アクティブマトリックス型液晶表示装置
TW480554B (en) * 1999-07-22 2002-03-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP2001119029A (ja) * 1999-10-18 2001-04-27 Fujitsu Ltd 薄膜トランジスタ及びその製造方法及びそれを備えた液晶表示装置
JP4727029B2 (ja) * 1999-11-29 2011-07-20 株式会社半導体エネルギー研究所 Ｅｌ表示装置、電気器具及びｅｌ表示装置用の半導体素子基板
US6348420B1 (en) * 1999-12-23 2002-02-19 Asm America, Inc. Situ dielectric stacks
US6573162B2 (en) * 1999-12-24 2003-06-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method of fabricating a semiconductor device
JP3806596B2 (ja) 1999-12-27 2006-08-09 三洋電機株式会社 表示装置およびその製造方法
JP5408829B2 (ja) * 1999-12-28 2014-02-05 ゲットナー・ファンデーション・エルエルシー アクティブマトリックス基板の製造方法
US7060153B2 (en) * 2000-01-17 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
US20010053559A1 (en) * 2000-01-25 2001-12-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating display device
US6639265B2 (en) * 2000-01-26 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
JP3365554B2 (ja) 2000-02-07 2003-01-14 キヤノン販売株式会社 半導体装置の製造方法
TW525305B (en) 2000-02-22 2003-03-21 Semiconductor Energy Lab Self-light-emitting device and method of manufacturing the same
US7023021B2 (en) * 2000-02-22 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
WO2001062275A1 (en) * 2000-02-24 2001-08-30 The Board Of Trustees Of The Leland Stanford Junior University Adjuvant treatment by in vivo activation of dendritic cells
TW521303B (en) * 2000-02-28 2003-02-21 Semiconductor Energy Lab Electronic device
JP4776792B2 (ja) * 2000-02-28 2011-09-21 株式会社半導体エネルギー研究所 発光装置および電気器具
JP2001267578A (ja) 2000-03-17 2001-09-28 Sony Corp 薄膜半導体装置及びその製造方法
TWI226205B (en) * 2000-03-27 2005-01-01 Semiconductor Energy Lab Self-light emitting device and method of manufacturing the same
TW521226B (en) 2000-03-27 2003-02-21 Semiconductor Energy Lab Electro-optical device
US7525165B2 (en) * 2000-04-17 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
JP4889872B2 (ja) 2000-04-17 2012-03-07 株式会社半導体エネルギー研究所 発光装置及びそれを用いた電気器具
TW493282B (en) * 2000-04-17 2002-07-01 Semiconductor Energy Lab Self-luminous device and electric machine using the same
TW531901B (en) * 2000-04-27 2003-05-11 Semiconductor Energy Lab Light emitting device
US6580475B2 (en) 2000-04-27 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
TW536836B (en) * 2000-05-22 2003-06-11 Semiconductor Energy Lab Light emitting device and electrical appliance
JP4581187B2 (ja) 2000-06-13 2010-11-17 ソニー株式会社 表示装置の製造方法
JP4519278B2 (ja) 2000-07-06 2010-08-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6828950B2 (en) * 2000-08-10 2004-12-07 Semiconductor Energy Laboratory Co., Ltd. Display device and method of driving the same
US6605826B2 (en) * 2000-08-18 2003-08-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and display device
US6822629B2 (en) * 2000-08-18 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US6739931B2 (en) * 2000-09-18 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating the display device
US6774578B2 (en) * 2000-09-19 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. Self light emitting device and method of driving thereof
US6599818B2 (en) * 2000-10-10 2003-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device manufacturing method, heat treatment apparatus, and heat treatment method
US6664732B2 (en) * 2000-10-26 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
JP4831874B2 (ja) * 2001-02-26 2011-12-07 株式会社半導体エネルギー研究所 発光装置及び電子機器
SG179310A1 (en) 2001-02-28 2012-04-27 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP2002258810A (ja) * 2001-03-05 2002-09-11 Hitachi Ltd 液晶表示装置
US6830994B2 (en) * 2001-03-09 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having a crystallized semiconductor film
US6737653B2 (en) * 2001-03-12 2004-05-18 Lg. Philips Lcd Co., Ltd. X-ray detector and method of fabricating therefore
JP2004523924A (ja) 2001-03-21 2004-08-05 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 電子デバイス
JP3977997B2 (ja) * 2001-05-11 2007-09-19 松下電器産業株式会社 半導体装置およびその製造方法
JP2003017273A (ja) 2001-07-05 2003-01-17 Sony Corp 表示装置および表示装置の製造方法
JP4876341B2 (ja) * 2001-07-13 2012-02-15 日本電気株式会社 アクティブマトリクス基板及びその製造方法
KR100924739B1 (ko) * 2001-09-21 2009-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 그 구동방법
US6842660B2 (en) * 2001-10-31 2005-01-11 Brooks Automation, Inc. Device and method for communicating data in a process control system
CN100380673C (zh) * 2001-11-09 2008-04-09 株式会社半导体能源研究所 发光设备及其制造方法
US20050132549A1 (en) 2001-11-16 2005-06-23 Wong-Cheng Shih Method for making metal capacitors with low leakage currents for mixed-signal devices
JP2003255562A (ja) 2002-03-04 2003-09-10 Sharp Corp パターン形成方法及びその方法を用いた表示装置
US7038239B2 (en) * 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989761B2 (ja) * 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
JP3989763B2 (ja) 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
JP4463493B2 (ja) 2002-04-15 2010-05-19 株式会社半導体エネルギー研究所 表示装置及びその作製方法
US7242021B2 (en) 2002-04-23 2007-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display element using semiconductor device
TWI272556B (en) * 2002-05-13 2007-02-01 Semiconductor Energy Lab Display device
TWI263339B (en) * 2002-05-15 2006-10-01 Semiconductor Energy Lab Light emitting device and method for manufacturing the same
US7256421B2 (en) * 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
US20040115934A1 (en) 2002-12-13 2004-06-17 Jerry Broz Method of improving contact resistance
TWI380080B (en) * 2003-03-07 2012-12-21 Semiconductor Energy Lab Liquid crystal display device and method for manufacturing the same
JP4574158B2 (ja) * 2003-10-28 2010-11-04 株式会社半導体エネルギー研究所 半導体表示装置及びその作製方法
US7494923B2 (en) 2004-06-14 2009-02-24 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of wiring substrate and semiconductor device

Also Published As

Publication number Publication date
KR100968496B1 (ko) 2010-07-07
US8709847B2 (en) 2014-04-29
US20030193054A1 (en) 2003-10-16
US20090020762A1 (en) 2009-01-22
US20130157398A1 (en) 2013-06-20
US8368072B2 (en) 2013-02-05
JP2004004757A (ja) 2004-01-08
KR20030082413A (ko) 2003-10-22
US7411215B2 (en) 2008-08-12
TWI270919B (en) 2007-01-11
TW200305920A (en) 2003-11-01
CN100357992C (zh) 2007-12-26
CN1452142A (zh) 2003-10-29

Similar Documents

Publication Publication Date Title
JP4463493B2 (ja) 表示装置及びその作製方法
JP4652470B2 (ja) 表示装置
JP4409196B2 (ja) 半導体装置及びそれを用いた表示装置、並びに半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060406

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060406

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090105

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091110

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091223

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100216

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100217

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130226

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4463493

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130226

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130226

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140226

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees