JP3732914B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP3732914B2
JP3732914B2 JP04523597A JP4523597A JP3732914B2 JP 3732914 B2 JP3732914 B2 JP 3732914B2 JP 04523597 A JP04523597 A JP 04523597A JP 4523597 A JP4523597 A JP 4523597A JP 3732914 B2 JP3732914 B2 JP 3732914B2
Authority
JP
Japan
Prior art keywords
voltage
circuit
power supply
mosfet
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP04523597A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10242839A (ja
JPH10242839A5 (enExample
Inventor
清男 伊藤
弘之 水野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP04523597A priority Critical patent/JP3732914B2/ja
Priority to TW087102038A priority patent/TW388120B/zh
Priority to US09/027,212 priority patent/US6046627A/en
Priority to KR1019980005898A priority patent/KR100574301B1/ko
Publication of JPH10242839A publication Critical patent/JPH10242839A/ja
Priority to US09/495,957 priority patent/US6545525B2/en
Priority to US10/385,493 priority patent/US20030155962A1/en
Priority to US10/851,156 priority patent/US7176745B2/en
Publication of JPH10242839A5 publication Critical patent/JPH10242839A5/ja
Application granted granted Critical
Publication of JP3732914B2 publication Critical patent/JP3732914B2/ja
Priority to US11/649,766 priority patent/US7560975B2/en
Priority to US12/412,781 priority patent/US7772917B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
JP04523597A 1997-02-28 1997-02-28 半導体装置 Expired - Fee Related JP3732914B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP04523597A JP3732914B2 (ja) 1997-02-28 1997-02-28 半導体装置
TW087102038A TW388120B (en) 1997-02-28 1998-02-13 Semiconductor device
US09/027,212 US6046627A (en) 1997-02-28 1998-02-20 Semiconductor device capable of operating stably with reduced power consumption
KR1019980005898A KR100574301B1 (ko) 1997-02-28 1998-02-25 반도체장치
US09/495,957 US6545525B2 (en) 1997-02-28 2000-02-02 Semiconductor device including interface circuit, logic circuit, and static memory array having transistors of various threshold voltages and being supplied with various supply voltages
US10/385,493 US20030155962A1 (en) 1997-02-28 2003-03-12 Semiconductor device
US10/851,156 US7176745B2 (en) 1997-02-28 2004-05-24 Semiconductor device
US11/649,766 US7560975B2 (en) 1997-02-28 2007-01-05 Semiconductor device
US12/412,781 US7772917B2 (en) 1997-02-28 2009-03-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04523597A JP3732914B2 (ja) 1997-02-28 1997-02-28 半導体装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2003364042A Division JP3718512B2 (ja) 2003-10-24 2003-10-24 半導体装置
JP2005256930A Division JP3905909B2 (ja) 2005-09-05 2005-09-05 半導体装置

Publications (3)

Publication Number Publication Date
JPH10242839A JPH10242839A (ja) 1998-09-11
JPH10242839A5 JPH10242839A5 (enExample) 2004-11-04
JP3732914B2 true JP3732914B2 (ja) 2006-01-11

Family

ID=12713605

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04523597A Expired - Fee Related JP3732914B2 (ja) 1997-02-28 1997-02-28 半導体装置

Country Status (4)

Country Link
US (6) US6046627A (enExample)
JP (1) JP3732914B2 (enExample)
KR (1) KR100574301B1 (enExample)
TW (1) TW388120B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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US6046627A (en) 2000-04-04
US20040217802A1 (en) 2004-11-04
US6545525B2 (en) 2003-04-08
JPH10242839A (ja) 1998-09-11
US7176745B2 (en) 2007-02-13
US20030155962A1 (en) 2003-08-21
KR100574301B1 (ko) 2006-07-25
US20090179693A1 (en) 2009-07-16
US7772917B2 (en) 2010-08-10
US7560975B2 (en) 2009-07-14
TW388120B (en) 2000-04-21
KR19980071678A (ko) 1998-10-26
US20030016075A1 (en) 2003-01-23
US20070109034A1 (en) 2007-05-17

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