JP4637512B2 - 半導体集積回路装置 - Google Patents
半導体集積回路装置 Download PDFInfo
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- JP4637512B2 JP4637512B2 JP2004185475A JP2004185475A JP4637512B2 JP 4637512 B2 JP4637512 B2 JP 4637512B2 JP 2004185475 A JP2004185475 A JP 2004185475A JP 2004185475 A JP2004185475 A JP 2004185475A JP 4637512 B2 JP4637512 B2 JP 4637512B2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/3181—Functional testing
- G01R31/3185—Reconfiguring for testing, e.g. LSSD, partitioning
- G01R31/318533—Reconfiguring for testing, e.g. LSSD, partitioning using scanning techniques, e.g. LSSD, Boundary Scan, JTAG
- G01R31/318572—Input/Output interfaces
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/3562—Bistable circuits of the master-slave type
- H03K3/35625—Bistable circuits of the master-slave type using complementary field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Computing Systems (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Static Random-Access Memory (AREA)
- Logic Circuits (AREA)
Description
T. Yamada et al., "A 133MHz 170mW 10μA Standby Application Processor for 3G Cellular Phones", ISSCC 2002, February, pp.370-371 S. Mutoh, et al.,"A 1V Multi-Threshold Voltage CMOS DSP with an Efficient Power Management Technique for Mobile Phone Application, ISSCC 1996,February, pp. 168-169 V. Zyuban, et al.,"Low Power Integrates Scan-Retention Mechanism", ISLPED 2002,August, pp.98-102
Claims (8)
- 複数のフリップフロップと、上記複数のフリップフロップの出力ノードに接続される複数の論理回路と、第1乃至第3電源線とを有する半導体集積回路装置であって、
上記フリップフロップは、その出力ノードが上記フリップフロップの出力ノードに接続された第1ラッチ回路と、その入力ノードが上記第1ラッチ回路の出力ノードまたは入力ノードに接続された第2ラッチ回路とを有し、
上記第1ラッチ回路及び上記論理回路の動作電圧は、上記第1及び上記第2電源線により供給され、
上記第2ラッチ回路の動作電圧は、上記第1及び上記第3電源線により供給され、
上記第1及び第2電源線は第1の配線幅を有し、
上記第3電源線は第2の配線幅を有し、
上記第2ラッチ回路の入力ノードと上記第1ラッチ回路の出力ノードまたは入力ノードとを接続する配線は第3の配線幅を有し、
上記第1の配線幅と上記第2の配線幅の差は、上記第2の配線幅と上記第3の配線幅の差よりも大きく、
上記半導体集積回路装置は第1モードと第2モードとをさらに有し、
上記第1モードにおいて上記論理回路及び上記フリップフロップの動作電圧が供給され、
上記第2モードにおいて上記論理回路及び上記フリップフロップの上記第1ラッチ回路の動作電圧の供給が停止され、上記フリップフロップの上記第2ラッチ回路の動作電圧の供給が継続される半導体集積回路装置。 - 請求項1において、
上記第1電源線と上記第3電源線との間にソース・ドレイン経路を有する第1MISFETを有し、
上記第1MISFETは上記第1モードにおいてはオン状態に制御され、上記第1MISFETは上記第2モードにおいてはオフ状態に制御される半導体集積回路装置。 - 請求項2において、
上記第1ラッチ回路及び上記論理回路は第2MISFETを含み、
上記第2ラッチ回路は第3MISFETを含み、
上記第3MISFETのしきい値電圧の絶対値は上記第2MISFETのしきい値電圧の絶対値よりも大きい半導体集積回路装置。 - 請求項3において、
上記第1MISFETのしきい値電圧の絶対値は上記第3MISFETのしきい値電圧よりも大きい半導体集積回路装置。 - 請求項1において、
上記第2ラッチ回路と上記第2電源線とを接続する第4MISFETを有し、
上記第1モードにおいて上記第4MISFETがオンとなり、上記第2モードにおいて上記第4MISFETがオフとなる半導体集積回路装置。 - 請求項5において、
上記第2ラッチ回路と上記第3電源線とを接続する第5MISFETを有し、
上記第1モードにおいて上記第5MISFETがオフとなり、上記第2モードにおいて上記第5MISFETがオンとなる半導体集積回路装置。 - 請求項1において、
上記第2モードにおいて上記第2ラッチ回路に供給される動作電圧は、上記第1モードにおいて上記第2ラッチ回路に供給される動作電圧よりも低くされる半導体集積回路装置。 - 請求項1において、
上記第2ラッチ回路は容量素子を有する半導体集積回路装置。
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004185475A JP4637512B2 (ja) | 2003-11-13 | 2004-06-23 | 半導体集積回路装置 |
TW093121042A TW200516714A (en) | 2003-11-13 | 2004-07-14 | Semiconductor integrated circuit device |
KR1020040065397A KR101117886B1 (ko) | 2003-11-13 | 2004-08-19 | 반도체 집적 회로 장치 |
US10/921,854 US7023058B2 (en) | 2003-11-13 | 2004-08-20 | Semiconductor integrated circuit device |
CN2008101713602A CN101388245B (zh) | 2003-11-13 | 2004-08-20 | 半导体集成电路装置 |
CNB2004100576084A CN100481451C (zh) | 2003-11-13 | 2004-08-20 | 半导体集成电路装置 |
US11/320,751 US7217963B2 (en) | 2003-11-13 | 2005-12-30 | Semiconductor integrated circuit device |
US11/797,034 US7428720B2 (en) | 2003-11-13 | 2007-04-30 | Standard cell for a CAD system |
US12/236,170 US7612391B2 (en) | 2003-11-13 | 2008-09-23 | Semiconductor integrated circuit device |
KR1020110053983A KR101087307B1 (ko) | 2003-11-13 | 2011-06-03 | 반도체 집적 회로 장치 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2003384237 | 2003-11-13 | ||
JP2004185475A JP4637512B2 (ja) | 2003-11-13 | 2004-06-23 | 半導体集積回路装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010233194A Division JP2011054980A (ja) | 2003-11-13 | 2010-10-18 | 半導体集積回路装置 |
Publications (2)
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JP2005167184A JP2005167184A (ja) | 2005-06-23 |
JP4637512B2 true JP4637512B2 (ja) | 2011-02-23 |
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Application Number | Title | Priority Date | Filing Date |
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JP2004185475A Expired - Fee Related JP4637512B2 (ja) | 2003-11-13 | 2004-06-23 | 半導体集積回路装置 |
Country Status (5)
Country | Link |
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US (4) | US7023058B2 (ja) |
JP (1) | JP4637512B2 (ja) |
KR (2) | KR101117886B1 (ja) |
CN (1) | CN100481451C (ja) |
TW (1) | TW200516714A (ja) |
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JP4129381B2 (ja) * | 2002-09-25 | 2008-08-06 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
JP4683833B2 (ja) * | 2003-10-31 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 機能回路及びその設計方法 |
JP4491267B2 (ja) * | 2004-04-09 | 2010-06-30 | パナソニック株式会社 | 不揮発性半導体記憶装置 |
US7247894B2 (en) * | 2004-04-28 | 2007-07-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Very fine-grain voltage island integrated circuit |
KR100604904B1 (ko) | 2004-10-02 | 2006-07-28 | 삼성전자주식회사 | 스캔 입력을 갖는 플립 플롭 회로 |
JP2006121197A (ja) * | 2004-10-19 | 2006-05-11 | Matsushita Electric Ind Co Ltd | レジスタ回路、レジスタ回路を含む同期式集積回路 |
JP4846272B2 (ja) | 2005-06-07 | 2011-12-28 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
US20070014137A1 (en) * | 2005-07-18 | 2007-01-18 | Mellinger Todd W | Banked cache with multiplexer |
JP4829645B2 (ja) * | 2006-03-08 | 2011-12-07 | パナソニック株式会社 | 半導体集積回路装置 |
JP4986114B2 (ja) * | 2006-04-17 | 2012-07-25 | ルネサスエレクトロニクス株式会社 | 半導体集積回路及び半導体集積回路の設計方法 |
JP4705880B2 (ja) * | 2006-05-09 | 2011-06-22 | Okiセミコンダクタ株式会社 | 半導体集積回路とそのテスト方法 |
KR100780750B1 (ko) * | 2006-05-11 | 2007-11-30 | 한국과학기술원 | 표준 셀과 파워 게이팅 셀을 이용한 파워 네트워크 및 이를가지는 반도체 장치 |
KR101352344B1 (ko) * | 2006-09-13 | 2014-01-15 | 삼성디스플레이 주식회사 | 신호전송 부재 및 이를 갖는 표시장치 |
JP4832232B2 (ja) * | 2006-09-20 | 2011-12-07 | パナソニック株式会社 | 半導体集積回路装置及び電子装置 |
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US7694242B1 (en) * | 2006-12-11 | 2010-04-06 | Cadence Design Systems, Inc. | System and method of replacing flip-flops with pulsed latches in circuit designs |
US7646210B2 (en) * | 2007-01-05 | 2010-01-12 | International Business Machines Corporation | Method and system for low-power level-sensitive scan design latch with power-gated logic |
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KR20050046532A (ko) | 2005-05-18 |
JP2005167184A (ja) | 2005-06-23 |
US7023058B2 (en) | 2006-04-04 |
CN100481451C (zh) | 2009-04-22 |
KR101117886B1 (ko) | 2012-03-20 |
US7217963B2 (en) | 2007-05-15 |
TWI356468B (ja) | 2012-01-11 |
US20060102934A1 (en) | 2006-05-18 |
US20050104133A1 (en) | 2005-05-19 |
CN1617336A (zh) | 2005-05-18 |
TW200516714A (en) | 2005-05-16 |
US20090027097A1 (en) | 2009-01-29 |
KR101087307B1 (ko) | 2011-11-25 |
US20070284619A1 (en) | 2007-12-13 |
US7428720B2 (en) | 2008-09-23 |
US7612391B2 (en) | 2009-11-03 |
KR20110074963A (ko) | 2011-07-05 |
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