|
US3576755A
(en)
|
1964-09-24 |
1971-04-27 |
American Cyanamid Co |
Photochromism in plastic film containing inorganic materials
|
|
US3513010A
(en)
|
1966-07-11 |
1970-05-19 |
Kalvar Corp |
Conversion foil
|
|
US3529963A
(en)
|
1966-08-23 |
1970-09-22 |
Du Pont |
Image-yielding elements and processes
|
|
US3720515A
(en)
|
1971-10-20 |
1973-03-13 |
Trw Inc |
Microelectronic circuit production
|
|
JPS52144972A
(en)
|
1976-05-28 |
1977-12-02 |
Hitachi Ltd |
Formation method of photo resist film
|
|
US4241165A
(en)
|
1978-09-05 |
1980-12-23 |
Motorola, Inc. |
Plasma development process for photoresist
|
|
US4328298A
(en)
|
1979-06-27 |
1982-05-04 |
The Perkin-Elmer Corporation |
Process for manufacturing lithography masks
|
|
US4314022A
(en)
|
1980-05-05 |
1982-02-02 |
Minnesota Mining And Manufacturing Company |
Photoresist developers and process
|
|
JPS5883847A
(ja)
|
1981-11-14 |
1983-05-19 |
Konishiroku Photo Ind Co Ltd |
金属画像形成材料用処理液
|
|
JPS60115222A
(ja)
|
1983-11-28 |
1985-06-21 |
Tokyo Ohka Kogyo Co Ltd |
微細パタ−ン形成方法
|
|
JPS62160981A
(ja)
|
1986-01-08 |
1987-07-16 |
Mitsubishi Heavy Ind Ltd |
石油タンカ−の改造法
|
|
JPH0778629B2
(ja)
|
1986-12-19 |
1995-08-23 |
ミノルタ株式会社 |
ポジ型レジスト膜及びそのレジストパターンの形成方法
|
|
US5077085A
(en)
|
1987-03-06 |
1991-12-31 |
Schnur Joel M |
High resolution metal patterning of ultra-thin films on solid substrates
|
|
US4814243A
(en)
*
|
1987-09-08 |
1989-03-21 |
American Telephone And Telegraph Company |
Thermal processing of photoresist materials
|
|
US4834834A
(en)
|
1987-11-20 |
1989-05-30 |
Massachusetts Institute Of Technology |
Laser photochemical etching using surface halogenation
|
|
US4845053A
(en)
|
1988-01-25 |
1989-07-04 |
John Zajac |
Flame ashing process for stripping photoresist
|
|
JP2841627B2
(ja)
|
1990-02-02 |
1998-12-24 |
日本電気株式会社 |
半導体ウェーハの洗浄方法
|
|
US5322764A
(en)
*
|
1991-05-21 |
1994-06-21 |
Mitsubishi Denki Kabushiki Kaisha |
Method for forming a patterned resist
|
|
JPH05142788A
(ja)
*
|
1991-05-21 |
1993-06-11 |
Mitsubishi Electric Corp |
レジストパターンの形成方法
|
|
JP2994501B2
(ja)
|
1991-09-13 |
1999-12-27 |
株式会社東芝 |
パターン形成方法
|
|
US5322765A
(en)
|
1991-11-22 |
1994-06-21 |
International Business Machines Corporation |
Dry developable photoresist compositions and method for use thereof
|
|
GEP20002074B
(en)
|
1992-05-19 |
2000-05-10 |
Westaim Tech Inc Ca |
Modified Material and Method for its Production
|
|
TW276353B
(enExample)
|
1993-07-15 |
1996-05-21 |
Hitachi Seisakusyo Kk |
|
|
JP3338134B2
(ja)
|
1993-08-02 |
2002-10-28 |
株式会社東芝 |
半導体ウエハ処理方法
|
|
JPH0757995A
(ja)
|
1993-08-16 |
1995-03-03 |
Toshiba Corp |
レジストパターン形成方法
|
|
JPH07106224A
(ja)
|
1993-10-01 |
1995-04-21 |
Hitachi Ltd |
パターン形成方法
|
|
JP3316078B2
(ja)
|
1994-03-04 |
2002-08-19 |
日本表面化学株式会社 |
レジスト剥離液
|
|
JPH0831781A
(ja)
|
1994-07-13 |
1996-02-02 |
Sony Corp |
洗浄薬液
|
|
US5534312A
(en)
|
1994-11-14 |
1996-07-09 |
Simon Fraser University |
Method for directly depositing metal containing patterned films
|
|
JPH08213304A
(ja)
|
1995-02-06 |
1996-08-20 |
Toshiba Corp |
レジストパタ−ンの形成方法
|
|
US5948570A
(en)
|
1995-05-26 |
1999-09-07 |
Lucent Technologies Inc. |
Process for dry lithographic etching
|
|
JPH08339950A
(ja)
|
1995-06-09 |
1996-12-24 |
Sony Corp |
フォトレジストパターン形成方法及びフォトレジスト処理装置
|
|
US6007963A
(en)
|
1995-09-21 |
1999-12-28 |
Sandia Corporation |
Method for extreme ultraviolet lithography
|
|
JPH09312247A
(ja)
*
|
1996-05-21 |
1997-12-02 |
Hitachi Ltd |
パターン形成方法及びパターン形成装置
|
|
JP2950785B2
(ja)
|
1996-12-09 |
1999-09-20 |
セントラル硝子株式会社 |
酸化膜のドライエッチング方法
|
|
US6261938B1
(en)
|
1997-02-12 |
2001-07-17 |
Quantiscript, Inc. |
Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography
|
|
JPH10301298A
(ja)
|
1997-02-28 |
1998-11-13 |
Toyobo Co Ltd |
感光性樹脂版の現像液および現像方法
|
|
JP3477077B2
(ja)
|
1997-07-01 |
2003-12-10 |
株式会社東芝 |
ネガ型感光性樹脂組成物、これを用いたパターン形成方法、および電子部品
|
|
US6290779B1
(en)
|
1998-06-12 |
2001-09-18 |
Tokyo Electron Limited |
Systems and methods for dry cleaning process chambers
|
|
US6348239B1
(en)
|
2000-04-28 |
2002-02-19 |
Simon Fraser University |
Method for depositing metal and metal oxide films and patterned films
|
|
DE69936727D1
(de)
|
1998-09-16 |
2007-09-13 |
Applied Materials Inc |
Verfahren zum aufbringen von silizium mit hoher rate bei niedrigen druck
|
|
JP3177973B2
(ja)
|
1999-01-28 |
2001-06-18 |
日本電気株式会社 |
半導体装置の製造方法
|
|
US7232742B1
(en)
|
1999-11-26 |
2007-06-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing a semiconductor device that includes forming a material with a high tensile stress in contact with a semiconductor film to getter impurities from the semiconductor film
|
|
US6582891B1
(en)
*
|
1999-12-02 |
2003-06-24 |
Axcelis Technologies, Inc. |
Process for reducing edge roughness in patterned photoresist
|
|
US6573030B1
(en)
|
2000-02-17 |
2003-06-03 |
Applied Materials, Inc. |
Method for depositing an amorphous carbon layer
|
|
JP2001250813A
(ja)
|
2000-03-06 |
2001-09-14 |
Hitachi Ltd |
プラズマ処理方法
|
|
US20040191423A1
(en)
|
2000-04-28 |
2004-09-30 |
Ruan Hai Xiong |
Methods for the deposition of silver and silver oxide films and patterned films
|
|
US20060001064A1
(en)
|
2000-04-28 |
2006-01-05 |
Hill Ross H |
Methods for the lithographic deposition of ferroelectric materials
|
|
EP1305824A4
(en)
|
2000-06-06 |
2007-07-25 |
Univ Fraser Simon |
METHOD FOR PRODUCING ELECTRONIC MATERIALS
|
|
KR100406174B1
(ko)
|
2000-06-15 |
2003-11-19 |
주식회사 하이닉스반도체 |
화학적 강화 화학 기상 증착 장비에 사용되는 샤워 헤드
|
|
JP2002015971A
(ja)
|
2000-06-27 |
2002-01-18 |
Matsushita Electric Ind Co Ltd |
パターン形成方法及び半導体装置の製造装置
|
|
KR100398312B1
(ko)
|
2000-06-30 |
2003-09-19 |
한국과학기술원 |
유기금속을 함유하고 있는 노르보넨 단량체, 이들의고분자 중합체를 함유하는 포토레지스트, 및 그제조방법과, 포토레지스트 패턴 형성방법
|
|
JP2002134402A
(ja)
|
2000-08-15 |
2002-05-10 |
Tokyo Electron Ltd |
基板処理方法及び基板処理装置
|
|
JP2005123651A
(ja)
|
2000-12-26 |
2005-05-12 |
Toshiba Corp |
レジスト膜の処理装置、およびレジストパターン形成方法
|
|
US6797439B1
(en)
|
2001-03-30 |
2004-09-28 |
Schott Lithotec Ag |
Photomask with back-side anti-reflective layer and method of manufacture
|
|
US6686132B2
(en)
*
|
2001-04-20 |
2004-02-03 |
The Regents Of The University Of California |
Method and apparatus for enhancing resist sensitivity and resolution by application of an alternating electric field during post-exposure bake
|
|
US6350689B1
(en)
|
2001-04-23 |
2002-02-26 |
Chartered Semiconductor Manufacturing Ltd. |
Method to remove copper contamination by using downstream oxygen and chelating agent plasma
|
|
US6933673B2
(en)
|
2001-04-27 |
2005-08-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Luminescent device and process of manufacturing the same
|
|
US6926957B2
(en)
|
2001-06-29 |
2005-08-09 |
3M Innovative Properties Company |
Water-based ink-receptive coating
|
|
JP2003213001A
(ja)
|
2001-11-13 |
2003-07-30 |
Sekisui Chem Co Ltd |
光反応性組成物
|
|
US6843858B2
(en)
|
2002-04-02 |
2005-01-18 |
Applied Materials, Inc. |
Method of cleaning a semiconductor processing chamber
|
|
JP3806702B2
(ja)
|
2002-04-11 |
2006-08-09 |
Ｈｏｙａ株式会社 |
反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法
|
|
US7390596B2
(en)
|
2002-04-11 |
2008-06-24 |
Hoya Corporation |
Reflection type mask blank and reflection type mask and production methods for them
|
|
DE10219173A1
(de)
|
2002-04-30 |
2003-11-20 |
Philips Intellectual Property |
Verfahren zur Erzeugung von Extrem-Ultraviolett-Strahlung
|
|
US6777173B2
(en)
|
2002-08-30 |
2004-08-17 |
Lam Research Corporation |
H2O vapor as a processing gas for crust, resist, and residue removal for post ion implant resist strip
|
|
CN1726431A
(zh)
|
2002-10-21 |
2006-01-25 |
纳米墨水公司 |
纳米级设计结构、其制造方法及设备以及在掩模修复、增强和制造上的应用
|
|
US20040121264A1
(en)
|
2002-12-04 |
2004-06-24 |
Bernhard Liegl |
Pattern transfer in device fabrication
|
|
JP4153783B2
(ja)
|
2002-12-09 |
2008-09-24 |
株式会社東芝 |
Ｘ線平面検出器
|
|
JP2006522480A
(ja)
|
2003-03-31 |
2006-09-28 |
東京エレクトロン株式会社 |
多層フォトレジストのドライ現像のための方法及び装置
|
|
GB0323805D0
(en)
|
2003-10-10 |
2003-11-12 |
Univ Southampton |
Synthesis of germanium sulphide and related compounds
|
|
US7126128B2
(en)
|
2004-02-13 |
2006-10-24 |
Kabushiki Kaisha Toshiba |
Flat panel x-ray detector
|
|
JP4202962B2
(ja)
|
2004-04-27 |
2008-12-24 |
株式会社東芝 |
基板処理方法及び半導体装置の製造方法
|
|
US20050250052A1
(en)
|
2004-05-10 |
2005-11-10 |
Nguyen Khe C |
Maskless lithography using UV absorbing nano particle
|
|
JP2006253282A
(ja)
|
2005-03-09 |
2006-09-21 |
Ebara Corp |
金属膜のパターン形成方法
|
|
US20060068173A1
(en)
|
2004-09-30 |
2006-03-30 |
Ebara Corporation |
Methods for forming and patterning of metallic films
|
|
WO2010059174A1
(en)
*
|
2008-08-07 |
2010-05-27 |
Pryog, Llc |
Metal compositions and methods of making same
|
|
JP4565194B2
(ja)
|
2004-12-17 |
2010-10-20 |
国立大学法人大阪大学 |
極端紫外光・ｘ線源用ターゲット及びその製造方法
|
|
KR100601979B1
(ko)
|
2004-12-30 |
2006-07-18 |
삼성전자주식회사 |
반도체 웨이퍼의 베이킹 장치
|
|
KR100607201B1
(ko)
|
2005-01-04 |
2006-08-01 |
삼성전자주식회사 |
극자외선 리소그래피 공정에서 웨이퍼 상의 임계 치수편차를 보정하는 방법
|
|
US7381633B2
(en)
|
2005-01-27 |
2008-06-03 |
Hewlett-Packard Development Company, L.P. |
Method of making a patterned metal oxide film
|
|
US7868304B2
(en)
|
2005-02-07 |
2011-01-11 |
Asml Netherlands B.V. |
Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
|
|
US7579497B2
(en)
|
2005-03-30 |
2009-08-25 |
Sumitomo Chemical Company, Limited |
Salt suitable for an acid generator and a chemically amplified resist composition containing the same
|
|
US7288514B2
(en)
|
2005-04-14 |
2007-10-30 |
The Clorox Company |
Polymer-fluorosurfactant associative complexes
|
|
JP4530933B2
(ja)
|
2005-07-21 |
2010-08-25 |
大日本スクリーン製造株式会社 |
基板熱処理装置
|
|
US7517640B2
(en)
|
2005-08-11 |
2009-04-14 |
Texas Instruments Incorporated |
Method for removing photoresist using a thermal bake in the presence of hydrogen and a semiconductor device manufactured using the same
|
|
JP4530980B2
(ja)
|
2005-08-26 |
2010-08-25 |
東京応化工業株式会社 |
膜形成用材料およびパターン形成方法
|
|
US7909960B2
(en)
|
2005-09-27 |
2011-03-22 |
Lam Research Corporation |
Apparatus and methods to remove films on bevel edge and backside of wafer
|
|
US8664124B2
(en)
|
2005-10-31 |
2014-03-04 |
Novellus Systems, Inc. |
Method for etching organic hardmasks
|
|
WO2007064376A2
(en)
|
2005-11-28 |
2007-06-07 |
Honeywell International Inc. |
Organometallic precursors and related intermediates for deposition processes, their production and methods of use
|
|
JP2007207530A
(ja)
|
2006-01-31 |
2007-08-16 |
Toshiba Corp |
異方性導電膜及びこれを用いたｘ線平面検出器、赤外線平面検出器及び表示装置
|
|
US7682659B1
(en)
|
2006-04-10 |
2010-03-23 |
The Regents Of The University Of California |
Fabrication of suspended carbon micro and nanoscale structures
|
|
US7578889B2
(en)
|
2007-03-30 |
2009-08-25 |
Lam Research Corporation |
Methodology for cleaning of surface metal contamination from electrode assemblies
|
|
KR101157938B1
(ko)
|
2007-05-15 |
2012-06-22 |
캐논 아네르바 가부시키가이샤 |
반도체 소자 제조 방법
|
|
JP5176423B2
(ja)
|
2007-08-10 |
2013-04-03 |
東京エレクトロン株式会社 |
石英製品のベーク方法及び記憶媒体
|
|
US20100275982A1
(en)
|
2007-09-04 |
2010-11-04 |
Malcolm Abbott |
Group iv nanoparticle junctions and devices therefrom
|
|
US8664513B2
(en)
|
2007-10-12 |
2014-03-04 |
OmniPV, Inc. |
Solar modules with enhanced efficiencies via use of spectral concentrators
|
|
US7976631B2
(en)
|
2007-10-16 |
2011-07-12 |
Applied Materials, Inc. |
Multi-gas straight channel showerhead
|
|
KR100921932B1
(ko)
|
2007-10-25 |
2009-10-15 |
포항공과대학교 산학협력단 |
다원자분자를 이용한 패터닝방법
|
|
US8236476B2
(en)
|
2008-01-08 |
2012-08-07 |
International Business Machines Corporation |
Multiple exposure photolithography methods and photoresist compositions
|
|
US20090197086A1
(en)
|
2008-02-04 |
2009-08-06 |
Sudha Rathi |
Elimination of photoresist material collapse and poisoning in 45-nm feature size using dry or immersion lithography
|
|
US8153348B2
(en)
|
2008-02-20 |
2012-04-10 |
Applied Materials, Inc. |
Process sequence for formation of patterned hard mask film (RFP) without need for photoresist or dry etch
|
|
US7985513B2
(en)
|
2008-03-18 |
2011-07-26 |
Advanced Micro Devices, Inc. |
Fluorine-passivated reticles for use in lithography and methods for fabricating the same
|
|
JP2009294439A
(ja)
|
2008-06-05 |
2009-12-17 |
Toshiba Corp |
レジストパターン形成方法
|
|
US20090325387A1
(en)
|
2008-06-26 |
2009-12-31 |
Applied Materials, Inc. |
Methods and apparatus for in-situ chamber dry clean during photomask plasma etching
|
|
WO2010007955A1
(ja)
|
2008-07-14 |
2010-01-21 |
旭硝子株式会社 |
Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
|
|
WO2010011974A1
(en)
|
2008-07-24 |
2010-01-28 |
Kovio, Inc. |
Aluminum inks and methods of making the same, methods for depositing aluminum inks, and films formed by printing and/or depositing an aluminum ink
|
|
US8435723B2
(en)
*
|
2008-09-11 |
2013-05-07 |
Nikon Corporation |
Pattern forming method and device production method
|
|
JP2010074065A
(ja)
|
2008-09-22 |
2010-04-02 |
Canon Anelva Corp |
酸化膜除去のための基板洗浄処理方法
|
|
US7977235B2
(en)
|
2009-02-02 |
2011-07-12 |
Tokyo Electron Limited |
Method for manufacturing a semiconductor device with metal-containing cap layers
|
|
JP5580546B2
(ja)
|
2009-04-07 |
2014-08-27 |
ルネサスエレクトロニクス株式会社 |
レジストパターン形成方法
|
|
JP5193121B2
(ja)
|
2009-04-17 |
2013-05-08 |
東京エレクトロン株式会社 |
レジスト塗布現像方法
|
|
US20100304027A1
(en)
|
2009-05-27 |
2010-12-02 |
Applied Materials, Inc. |
Substrate processing system and methods thereof
|
|
US7998359B2
(en)
|
2010-09-24 |
2011-08-16 |
Innovalight, Inc. |
Methods of etching silicon-containing films on silicon substrates
|
|
JP2011099956A
(ja)
|
2009-11-05 |
2011-05-19 |
Toppan Printing Co Ltd |
レジストのベーク方法及びベーク装置
|
|
TWI494682B
(zh)
|
2009-11-18 |
2015-08-01 |
Ｈｏｙａ股份有限公司 |
基板之再生方法、光罩基底之製造方法、附多層反射膜基板之製造方法及反射型光罩基底之製造方法
|
|
CN102656517B
(zh)
|
2009-12-28 |
2014-05-14 |
旭硝子株式会社 |
感光性组合物、间隔壁、彩色滤光片及有机el元件
|
|
US8343371B2
(en)
|
2010-01-15 |
2013-01-01 |
Tokyo Electron Limited |
Apparatus and method for improving photoresist properties using a quasi-neutral beam
|
|
JP5068831B2
(ja)
|
2010-02-05 |
2012-11-07 |
信越化学工業株式会社 |
レジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法
|
|
US8338086B2
(en)
|
2010-03-31 |
2012-12-25 |
Tokyo Electron Limited |
Method of slimming radiation-sensitive material lines in lithographic applications
|
|
US9176377B2
(en)
|
2010-06-01 |
2015-11-03 |
Inpria Corporation |
Patterned inorganic layers, radiation based patterning compositions and corresponding methods
|
|
SG177021A1
(en)
|
2010-06-16 |
2012-01-30 |
Univ Nanyang Tech |
Micoelectrode array sensor for detection of heavy metals in aqueous solutions
|
|
TW201224190A
(en)
|
2010-10-06 |
2012-06-16 |
Applied Materials Inc |
Atomic layer deposition of photoresist materials and hard mask precursors
|
|
WO2012058557A2
(en)
|
2010-10-28 |
2012-05-03 |
The Procter & Gamble Company |
Personal care compositions comprising a pyrithione and an iron chelator
|
|
US20120192605A1
(en)
|
2010-12-23 |
2012-08-02 |
The Ohio State University |
Fertilizer composition and method
|
|
US8778816B2
(en)
|
2011-02-04 |
2014-07-15 |
Applied Materials, Inc. |
In situ vapor phase surface activation of SiO2
|
|
JP5708522B2
(ja)
|
2011-02-15 |
2015-04-30 |
信越化学工業株式会社 |
レジスト材料及びこれを用いたパターン形成方法
|
|
US9281207B2
(en)
|
2011-02-28 |
2016-03-08 |
Inpria Corporation |
Solution processible hardmasks for high resolution lithography
|
|
WO2012173699A1
(en)
|
2011-06-15 |
2012-12-20 |
Applied Materials, Inc. |
Methods and apparatus for performing multiple photoresist layer development and etching processes
|
|
KR101909567B1
(ko)
|
2011-07-08 |
2018-10-18 |
에이에스엠엘 네델란즈 비.브이. |
리소그래피 패터닝 공정 및 상기 공정에 사용하기 위한 레지스트
|
|
CN102610516B
(zh)
|
2011-07-22 |
2015-01-21 |
上海华力微电子有限公司 |
一种提高光刻胶与金属/金属化合物表面之间粘附力的方法
|
|
JP6592243B2
(ja)
|
2011-11-21 |
2019-10-16 |
ブルーワー サイエンス アイ エヌ シー． |
Ｅｕｖリソグラフィのためのアシスト層
|
|
US8691476B2
(en)
|
2011-12-16 |
2014-04-08 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
EUV mask and method for forming the same
|
|
JP5705103B2
(ja)
|
2011-12-26 |
2015-04-22 |
株式会社東芝 |
パターン形成方法
|
|
KR101920711B1
(ko)
|
2012-01-16 |
2018-11-22 |
삼성전자주식회사 |
박막 패터닝 방법 및 이를 이용한 반도체소자의 제조방법
|
|
SG193093A1
(en)
|
2012-02-13 |
2013-09-30 |
Novellus Systems Inc |
Method for etching organic hardmasks
|
|
US8703386B2
(en)
|
2012-02-27 |
2014-04-22 |
International Business Machines Corporation |
Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications
|
|
WO2013172359A1
(ja)
|
2012-05-14 |
2013-11-21 |
コニカミノルタ株式会社 |
ガスバリア性フィルム、ガスバリア性フィルムの製造方法及び電子デバイス
|
|
SG195494A1
(en)
|
2012-05-18 |
2013-12-30 |
Novellus Systems Inc |
Carbon deposition-etch-ash gap fill process
|
|
US9547238B2
(en)
|
2012-10-16 |
2017-01-17 |
Eugen Pavel |
Photoresist with rare-earth sensitizers
|
|
US9362133B2
(en)
|
2012-12-14 |
2016-06-07 |
Lam Research Corporation |
Method for forming a mask by etching conformal film on patterned ashable hardmask
|
|
JP5913077B2
(ja)
|
2012-12-18 |
2016-04-27 |
信越化学工業株式会社 |
ポジ型レジスト材料及びこれを用いたパターン形成方法
|
|
US9017568B2
(en)
|
2013-01-22 |
2015-04-28 |
Tel Fsi, Inc. |
Process for increasing the hydrophilicity of silicon surfaces following HF treatment
|
|
JP6134522B2
(ja)
|
2013-01-30 |
2017-05-24 |
株式会社ニューフレアテクノロジー |
気相成長装置および気相成長方法
|
|
US9057960B2
(en)
*
|
2013-02-04 |
2015-06-16 |
International Business Machines Corporation |
Resist performance for the negative tone develop organic development process
|
|
US9304396B2
(en)
|
2013-02-25 |
2016-04-05 |
Lam Research Corporation |
PECVD films for EUV lithography
|
|
US9607904B2
(en)
|
2013-03-11 |
2017-03-28 |
Intermolecular, Inc. |
Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devices
|
|
US9632411B2
(en)
|
2013-03-14 |
2017-04-25 |
Applied Materials, Inc. |
Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
|
|
US9223220B2
(en)
|
2013-03-12 |
2015-12-29 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Photo resist baking in lithography process
|
|
WO2014159427A1
(en)
|
2013-03-14 |
2014-10-02 |
Applied Materials, Inc |
Resist hardening and development processes for semiconductor device manufacturing
|
|
US10074544B2
(en)
|
2013-04-23 |
2018-09-11 |
Massachusetts Institute Of Technology |
Developer free positive tone lithography by thermal direct write
|
|
CN105229776B
(zh)
|
2013-05-24 |
2019-05-03 |
三井化学株式会社 |
防护膜组件及含有其的euv曝光装置
|
|
US10197912B2
(en)
|
2013-05-24 |
2019-02-05 |
Boe Technology Group Co., Ltd. |
Method for manufacturing color photoresist pattern in color filter
|
|
US9310684B2
(en)
|
2013-08-22 |
2016-04-12 |
Inpria Corporation |
Organometallic solution based high resolution patterning compositions
|
|
US9372402B2
(en)
|
2013-09-13 |
2016-06-21 |
The Research Foundation For The State University Of New York |
Molecular organometallic resists for EUV
|
|
JP5917477B2
(ja)
|
2013-11-29 |
2016-05-18 |
株式会社日立国際電気 |
基板処理装置、半導体装置の製造方法及びプログラム
|
|
KR102306612B1
(ko)
|
2014-01-31 |
2021-09-29 |
램 리써치 코포레이션 |
진공-통합된 하드마스크 프로세스 및 장치
|
|
JP6364361B2
(ja)
|
2014-02-21 |
2018-07-25 |
東京エレクトロン株式会社 |
光増感化学増幅型レジスト材料及びこれを用いたパターン形成方法、並びに、半導体デバイス、リソグラフィ用マスク及びナノインプリント用テンプレートの製造方法
|
|
WO2015127459A1
(en)
|
2014-02-24 |
2015-08-27 |
Tokyo Electron Limited |
Methods and techniques to use with photosensitized chemically amplified resist chemicals and processes
|
|
CN106232345A
(zh)
|
2014-04-22 |
2016-12-14 |
沙特基础工业全球技术有限公司 |
集成的柔性透明导电膜
|
|
WO2015178464A1
(ja)
|
2014-05-21 |
2015-11-26 |
国立大学法人大阪大学 |
レジストパターン形成方法、レジスト潜像形成装置およびレジスト材料
|
|
JP2017521715A
(ja)
|
2014-07-08 |
2017-08-03 |
東京エレクトロン株式会社 |
ネガティブトーン現像剤相溶性フォトレジスト組成物及び使用方法
|
|
GB201412201D0
(en)
|
2014-07-09 |
2014-08-20 |
Isis Innovation |
Two-step deposition process
|
|
KR101994793B1
(ko)
|
2014-09-02 |
2019-07-01 |
후지필름 가부시키가이샤 |
패턴 형성 방법, 전자 디바이스의 제조 방법, 레지스트 조성물, 및 레지스트막
|
|
US20160086864A1
(en)
|
2014-09-24 |
2016-03-24 |
Lam Research Corporation |
Movable gas nozzle in drying module
|
|
MX2017003974A
(es)
|
2014-09-25 |
2017-06-30 |
Procter & Gamble |
Composiciones detergentes y de limpieza para lavanderia que comprenden polimeros que contienen grupos sulfonato.
|
|
CN105489635B
(zh)
|
2014-10-13 |
2018-09-21 |
中芯国际集成电路制造(上海)有限公司 |
一种半导体器件及其制备方法、电子装置
|
|
KR102319630B1
(ko)
|
2014-10-23 |
2021-10-29 |
인프리아 코포레이션 |
유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법
|
|
US9551924B2
(en)
|
2015-02-12 |
2017-01-24 |
International Business Machines Corporation |
Structure and method for fixing phase effects on EUV mask
|
|
CN104637792A
(zh)
|
2015-02-12 |
2015-05-20 |
武汉新芯集成电路制造有限公司 |
一种改善光刻胶剥离缺陷的方法
|
|
US20180047898A1
(en)
|
2015-03-09 |
2018-02-15 |
Versum Materials Us, Llc |
Process for depositing porous organosilicate glass films for use as resistive random access memory
|
|
JP6404757B2
(ja)
|
2015-03-27 |
2018-10-17 |
信越化学工業株式会社 |
レジスト下層膜材料用重合体、レジスト下層膜材料、及びパターン形成方法
|
|
US9829790B2
(en)
*
|
2015-06-08 |
2017-11-28 |
Applied Materials, Inc. |
Immersion field guided exposure and post-exposure bake process
|
|
WO2017002497A1
(ja)
|
2015-06-30 |
2017-01-05 |
富士フイルム株式会社 |
パターン形成方法、及び電子デバイスの製造方法
|
|
US10468249B2
(en)
|
2015-09-28 |
2019-11-05 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Patterning process of a semiconductor structure with a middle layer
|
|
KR20260059663A
(ko)
|
2015-10-13 |
2026-04-30 |
인프리아 코포레이션 |
유기주석 옥사이드 하이드록사이드 패터닝 조성물, 전구체 및 패터닝
|
|
US9996004B2
(en)
|
2015-11-20 |
2018-06-12 |
Lam Research Corporation |
EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
|
|
US11187984B2
(en)
|
2015-11-25 |
2021-11-30 |
Osaka University |
Resist patterning method and resist material
|
|
JP6603115B2
(ja)
|
2015-11-27 |
2019-11-06 |
信越化学工業株式会社 |
ケイ素含有縮合物、ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法
|
|
US10503070B2
(en)
|
2015-12-10 |
2019-12-10 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Photosensitive material and method of lithography
|
|
NL2018040A
(en)
|
2015-12-23 |
2017-06-28 |
Asml Netherlands Bv |
Method for removing photosensitive material on a substrate
|
|
CN108700826B
(zh)
|
2016-02-23 |
2021-04-27 |
Asml荷兰有限公司 |
控制图案化工艺的方法、光刻设备、量测设备光刻单元和相关联的计算机程序
|
|
US10018920B2
(en)
*
|
2016-03-04 |
2018-07-10 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Lithography patterning with a gas phase resist
|
|
US10649328B2
(en)
|
2016-03-11 |
2020-05-12 |
Inpria Corporation |
Pre-patterned lithography templates, processes based on radiation patterning using the templates and processes to form the templates
|
|
US10825684B2
(en)
*
|
2016-03-18 |
2020-11-03 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Material composition and methods thereof
|
|
CN109154772B
(zh)
|
2016-05-19 |
2023-11-07 |
Asml荷兰有限公司 |
抗蚀剂组合物
|
|
US9824893B1
(en)
|
2016-06-28 |
2017-11-21 |
Lam Research Corporation |
Tin oxide thin film spacers in semiconductor device manufacturing
|
|
WO2018004551A1
(en)
|
2016-06-28 |
2018-01-04 |
Intel Corporation |
Polysilane-, polygermane-, and polystannane-based materials for euv and ebeam lithography
|
|
US10866516B2
(en)
|
2016-08-05 |
2020-12-15 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Metal-compound-removing solvent and method in lithography
|
|
US10627719B2
(en)
|
2016-08-12 |
2020-04-21 |
Inpria Corporation |
Methods of reducing metal residue in edge bead region from metal-containing resists
|
|
JP7323737B2
(ja)
|
2016-09-29 |
2023-08-09 |
ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア |
液－液抽出による金属イオンの分離
|
|
WO2018061670A1
(ja)
|
2016-09-29 |
2018-04-05 |
富士フイルム株式会社 |
処理液、および積層体の処理方法
|
|
KR102614850B1
(ko)
|
2016-10-05 |
2023-12-18 |
삼성전자주식회사 |
반도체 소자 제조방법
|
|
US10755942B2
(en)
|
2016-11-02 |
2020-08-25 |
Massachusetts Institute Of Technology |
Method of forming topcoat for patterning
|
|
US10520821B2
(en)
|
2016-11-29 |
2019-12-31 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Lithography process with enhanced etch selectivity
|
|
JP6781031B2
(ja)
*
|
2016-12-08 |
2020-11-04 |
東京エレクトロン株式会社 |
基板処理方法及び熱処理装置
|
|
JP6955073B2
(ja)
|
2016-12-08 |
2021-10-27 |
東京エレクトロン株式会社 |
熱処理方法及び熱処理装置
|
|
US9929012B1
(en)
|
2016-12-14 |
2018-03-27 |
International Business Machines Corporation |
Resist having tuned interface hardmask layer for EUV exposure
|
|
US10866511B2
(en)
|
2016-12-15 |
2020-12-15 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Extreme ultraviolet photolithography method with developer composition
|
|
KR102047538B1
(ko)
|
2017-02-03 |
2019-11-21 |
삼성에스디아이 주식회사 |
레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
|
|
US10096477B2
(en)
|
2017-02-15 |
2018-10-09 |
International Business Machines Corporation |
Method to improve adhesion of photoresist on silicon substrate for extreme ultraviolet and electron beam lithography
|
|
US20200002568A1
(en)
|
2017-03-16 |
2020-01-02 |
Merck Patent Gmbh |
Lithographic compositions and methods of use thereof
|
|
US10832909B2
(en)
|
2017-04-24 |
2020-11-10 |
Lam Research Corporation |
Atomic layer etch, reactive precursors and energetic sources for patterning applications
|
|
US20180308687A1
(en)
|
2017-04-24 |
2018-10-25 |
Lam Research Corporation |
Euv photopatterning and selective deposition for negative pattern mask
|
|
US10796912B2
(en)
|
2017-05-16 |
2020-10-06 |
Lam Research Corporation |
Eliminating yield impact of stochastics in lithography
|
|
US10545408B2
(en)
|
2017-08-18 |
2020-01-28 |
Varian Semiconductor Equipment Associates, Inc. |
Performance improvement of EUV photoresist by ion implantation
|
|
KR20200053495A
(ko)
|
2017-09-19 |
2020-05-18 |
제이에스알 가부시끼가이샤 |
레지스트 패턴 형성 방법 및 기판의 처리 방법
|
|
KR102067081B1
(ko)
|
2017-11-01 |
2020-01-16 |
삼성에스디아이 주식회사 |
레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
|
|
US11300878B2
(en)
|
2017-11-13 |
2022-04-12 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Photoresist developer and method of developing photoresist
|
|
KR102918243B1
(ko)
|
2017-11-20 |
2026-01-26 |
인프리아 코포레이션 |
유기주석 클러스터, 유기주석 클러스터의 용액, 및 고해상도 패턴화에 대한 적용
|
|
US11022879B2
(en)
|
2017-11-24 |
2021-06-01 |
Asm Ip Holding B.V. |
Method of forming an enhanced unexposed photoresist layer
|
|
JP7010195B2
(ja)
|
2017-11-29 |
2022-01-26 |
信越化学工業株式会社 |
パターン形成方法
|
|
WO2019125952A1
(en)
|
2017-12-18 |
2019-06-27 |
Tokyo Electron Limited |
Plasma treatment method to enhance surface adhesion for lithography
|
|
JP7024744B2
(ja)
|
2018-02-22 |
2022-02-24 |
信越化学工業株式会社 |
レジスト材料及びこれを用いたパターン形成方法
|
|
TWI778248B
(zh)
|
2018-04-05 |
2022-09-21 |
美商英培雅股份有限公司 |
錫十二聚物及具有強euv吸收的輻射可圖案化塗層
|
|
US10787466B2
(en)
|
2018-04-11 |
2020-09-29 |
Inpria Corporation |
Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
|
|
US11673903B2
(en)
|
2018-04-11 |
2023-06-13 |
Inpria Corporation |
Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
|
|
US20190348292A1
(en)
|
2018-05-10 |
2019-11-14 |
International Business Machines Corporation |
Transferring euv resist pattern to eliminate pattern transfer defectivity
|
|
WO2019217749A1
(en)
|
2018-05-11 |
2019-11-14 |
Lam Research Corporation |
Methods for making euv patternable hard masks
|
|
EP3809206A4
(en)
|
2018-06-14 |
2021-08-18 |
Osaka University |
METHOD OF MANUFACTURING A RESIST PATTERN
|
|
US11016386B2
(en)
|
2018-06-15 |
2021-05-25 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Photoresist composition and method of forming photoresist pattern
|
|
TWI796816B
(zh)
|
2018-06-21 |
2023-03-21 |
美商英培雅股份有限公司 |
單烷基錫烷氧化物的穩定溶液及其水解與縮合產物
|
|
KR102306444B1
(ko)
|
2018-07-31 |
2021-09-28 |
삼성에스디아이 주식회사 |
반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
|
|
US10838304B2
(en)
|
2018-08-13 |
2020-11-17 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Priming material for organometallic resist
|
|
JP7241486B2
(ja)
|
2018-08-21 |
2023-03-17 |
東京エレクトロン株式会社 |
マスクの形成方法
|
|
TWI884927B
(zh)
|
2018-10-17 |
2025-06-01 |
美商英培雅股份有限公司 |
圖案化有機金屬光阻及圖案化的方法
|
|
US11921427B2
(en)
|
2018-11-14 |
2024-03-05 |
Lam Research Corporation |
Methods for making hard masks useful in next-generation lithography
|
|
US12025919B2
(en)
|
2018-11-30 |
2024-07-02 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Method of storing photoresist coated substrates and semiconductor substrate container arrangement
|
|
CN113227909B
(zh)
|
2018-12-20 |
2025-07-04 |
朗姆研究公司 |
抗蚀剂的干式显影
|
|
US11498934B2
(en)
|
2019-01-30 |
2022-11-15 |
Inpria Corporation |
Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with particulate contamination and corresponding methods
|
|
US11966158B2
(en)
|
2019-01-30 |
2024-04-23 |
Inpria Corporation |
Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with low metal contamination and/or particulate contamination, and corresponding methods
|
|
JP7208813B2
(ja)
|
2019-02-08 |
2023-01-19 |
東京エレクトロン株式会社 |
基板処理装置及び基板処理方法
|
|
TW202514246A
(zh)
|
2019-03-18 |
2025-04-01 |
美商蘭姆研究公司 |
基板處理方法與設備
|
|
EP3953767A4
(en)
|
2019-04-12 |
2023-06-07 |
Inpria Corporation |
ORGANOMETALLIC PHOTORESIN DEVELOPER COMPOSITIONS AND METHODS OF TREATMENT
|
|
TWI837391B
(zh)
|
2019-06-26 |
2024-04-01 |
美商蘭姆研究公司 |
利用鹵化物化學品的光阻顯影
|
|
EP3990984A4
(en)
|
2019-06-27 |
2023-07-26 |
Lam Research Corporation |
DEVICE FOR DRY DEPOSITION OF PHOTOVARNISH
|
|
JP7589179B2
(ja)
|
2019-06-28 |
2024-11-25 |
ラム リサーチ コーポレーション |
金属含有レジストのリソグラフィ性能を向上させるためのベーキング方法
|
|
TW202536930A
(zh)
|
2019-06-28 |
2025-09-16 |
美商蘭姆研究公司 |
光阻膜的乾式腔室清潔
|
|
TWI862621B
(zh)
|
2019-07-09 |
2024-11-21 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
包括光阻底層之結構及其形成方法
|
|
US11782345B2
(en)
|
2019-08-05 |
2023-10-10 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Bottom antireflective coating materials
|
|
KR20220076498A
(ko)
|
2019-10-08 |
2022-06-08 |
램 리써치 코포레이션 |
Cvd euv 레지스트 막들의 포지티브 톤 현상 (positive tone development)
|
|
TWI846966B
(zh)
|
2019-10-10 |
2024-07-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
形成光阻底層之方法及包括光阻底層之結構
|
|
EP4651192A3
(en)
|
2020-01-15 |
2026-03-04 |
Lam Research Corporation |
Underlayer for photoresist adhesion and dose reduction
|
|
US20230031955A1
(en)
|
2020-02-04 |
2023-02-02 |
Lam Research Corporation |
Post application/exposure treatments to improve dry development performance of metal-containing euv resist
|
|
EP4115242A4
(en)
|
2020-03-02 |
2024-03-13 |
Inpria Corporation |
PROCESSING ENVIRONMENT FOR THE FORMATION OF INORGANIC RESERVE PATTERNS
|
|
US11822237B2
(en)
|
2020-03-30 |
2023-11-21 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method of manufacturing a semiconductor device
|
|
CN115398336A
(zh)
|
2020-03-31 |
2022-11-25 |
朗姆研究公司 |
用气相注入敏化剂对euv干式抗蚀剂进行敏化的装置和工艺
|
|
WO2021202681A1
(en)
|
2020-04-03 |
2021-10-07 |
Lam Research Corporation |
Pre-exposure photoresist curing to enhance euv lithographic performance
|
|
KR20230005970A
(ko)
|
2020-05-06 |
2023-01-10 |
인프리아 코포레이션 |
중간 고정 단계가 있는 유기금속 광패턴가능 층을 사용한 다중 패터닝
|
|
KR20230041688A
(ko)
|
2020-06-22 |
2023-03-24 |
램 리써치 코포레이션 |
금속-함유 포토레지스트 (photoresist) 증착을 위한 표면 개질
|
|
WO2021262529A1
(en)
|
2020-06-22 |
2021-12-30 |
Lam Research Corporation |
Dry backside and bevel edge clean of photoresist
|
|
US20230178364A1
(en)
|
2020-07-02 |
2023-06-08 |
Lam Research Corporation |
Removable cvd polymer film for surface protection and queue period extension
|
|
CN116134380A
(zh)
|
2020-07-17 |
2023-05-16 |
朗姆研究公司 |
光敏混合膜的形成方法
|
|
CN116134383A
(zh)
|
2020-07-17 |
2023-05-16 |
朗姆研究公司 |
用于含金属光致抗蚀剂的显影的金属螯合剂
|
|
US20220037152A1
(en)
|
2020-07-30 |
2022-02-03 |
Tokyo Electron Limited |
Plasma Pre-Treatment Method To Improve Etch Selectivity And Defectivity Margin
|
|
US11079682B1
(en)
|
2020-11-13 |
2021-08-03 |
Tokyo Electron Limited |
Methods for extreme ultraviolet (EUV) resist patterning development
|
|
TW202544569A
(zh)
|
2021-04-02 |
2025-11-16 |
美商蘭姆研究公司 |
來自含金屬光阻之金屬汙染物的控制
|
|
CN117730281A
(zh)
|
2021-07-26 |
2024-03-19 |
朗姆研究公司 |
用于改善含金属抗蚀剂的干式显影性能的多步骤暴露后处理
|
|
CN118020031A
(zh)
|
2021-07-29 |
2024-05-10 |
朗姆研究公司 |
含金属光致抗蚀剂的再加工
|
|
US20230146910A1
(en)
|
2021-11-11 |
2023-05-11 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Methods and compositions for improved patterning of photoresist
|
|
US20230152705A1
(en)
|
2021-11-17 |
2023-05-18 |
Tokyo Electron Limited |
UV Treatment of EUV Resists
|
|
TW202340858A
(zh)
|
2021-12-13 |
2023-10-16 |
美商蘭姆研究公司 |
混合有機錫氧化物光阻的顯影
|
|
KR20250003664A
(ko)
|
2022-05-04 |
2025-01-07 |
램 리써치 코포레이션 |
금속-함유 포토레지스트의 현상-후 처리
|