JP2020042034A - 一貫性のあるセンサ表面積を有する化学センサ - Google Patents
一貫性のあるセンサ表面積を有する化学センサ Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
- B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
- B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
- B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
- B01L3/502761—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip specially adapted for handling suspended solids or molecules independently from the bulk fluid flow, e.g. for trapping or sorting beads, for physically stretching molecules
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2200/00—Solutions for specific problems relating to chemical or physical laboratory apparatus
- B01L2200/06—Fluid handling related problems
- B01L2200/0647—Handling flowable solids, e.g. microscopic beads, cells, particles
- B01L2200/0668—Trapping microscopic beads
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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- B01L2300/06—Auxiliary integrated devices, integrated components
- B01L2300/0627—Sensor or part of a sensor is integrated
- B01L2300/0636—Integrated biosensor, microarrays
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- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
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Abstract
Description
本出願は、2013年11月6日出願の米国仮特許出願第61/900,907号、及び2013年3月15日出願の同第61/790,866号に対する優先権を主張するものであり、その内容全体は参照によりそれらの全体が本明細書に組み込まれる。
Claims (19)
- 化学センサであって、
上面を有する浮遊ゲート導体を含む化学感応性電界効果トランジスタと、
前記浮遊ゲート導体の前記上面にまで延伸する開口部を画定する材料であって、第2の絶縁体の下にある第1の絶縁体を備える材料と、
前記浮遊ゲート導体の前記上面に接触し、かつ前記開口部の側壁に沿ってある距離を延伸する伝導性素子と、を備える、前記化学センサ。 - 前記開口部が、前記第1の絶縁体内に下部、及び前記第2の絶縁体内に上部を含む、請求項1に記載の前記化学センサ。
- 前記開口部の前記下部の幅が、前記上部の幅と実質的に同じである、請求項2に記載の前記化学センサ。
- 前記伝導性素子が、前記開口部の形状と共形である、請求項2に記載の前記化学センサ。
- 前記伝導性素子が、前記第2の絶縁体の上面にまで延伸する、請求項1に記載の前記化学センサ。
- 前記伝導性素子が、前記化学センサの反応領域の下部を画定する内面を含み、前記第2の絶縁体が、前記開口部の上部を画定する内面を含む、請求項1に記載の前記化学センサ。
- 前記伝導性素子が、導電性材料を備え、前記伝導性素子の内面が、前記導電性材料の酸化物を含む、請求項1に記載の前記化学センサ。
- 前記化学センサの検知表面が、前記伝導性素子の内面を含む、請求項1に記載の前記化学センサ。
- 前記化学感応性電界効果トランジスタが、前記伝導性素子に近接して発生する化学反応に応答してセンサ信号を生成する、請求項1に記載の前記化学センサ。
- 前記浮遊ゲート導体が、互いに電気的に連結され、かつ絶縁体層によって分離される複数の導体を含み、前記浮遊ゲート導体が、前記複数の導体内の一番上の導体である、請求項1に記載の前記化学センサ。
- 化学センサの製造方法であって、
上面を有する浮遊ゲート導体を含む化学感応性電界効果トランジスタを形成することと、
前記浮遊ゲート導体の前記上面にまで延伸する開口部を画定する材料を形成することであって、前記材料が第2の絶縁体の下にある第1の絶縁体を備える、形成することと、
前記浮遊ゲート導体の前記上面に接触し、かつ前記開口部の側壁に沿ってある距離を延伸する伝導性素子を形成することと、を含む、前記方法。 - 前記材料を形成すること及び前記伝導性素子を形成することが、
前記浮遊ゲート導体上に前記第1の絶縁体を形成することであって、前記第1の絶縁体が前記浮遊ゲート導体の前記上面にまで延伸する空洞を画定する、形成することと、
その上に前記第2の絶縁体を形成することと、
前記伝導性素子を曝露するために、前記第2の絶縁体をエッチングし、それによって開口部を画定することと、
前記開口部内に前記伝導性素子を形成することと、を含む、請求項11に記載の前記方法。 - 前記開口部内に前記伝導性素子を形成することが、
伝導性材料を前記開口部内かつ前記第1の絶縁体の上面上に堆積することと、
前記伝導性材料の少なくとも一部分を前記第2の絶縁体の前記上面から取り除くことと、を含む、請求項12に記載の前記方法。 - 前記伝導性材料の少なくとも前記一部分を取り除くことが、
前記開口部内のフォトレジストの層を堆積することと、
前記伝導性材料の少なくとも一部分を、前記フォトレジストと一緒に、前記第2の絶縁体の前記上面から取り除くことと、を含む、請求項13に記載の前記方法。 - 残りのフォトレジストを取り除くことをさらに含む、請求項14に記載の前記方法。
- 前記伝導性材料がチタンを含む、請求項11に記載の前記方法。
- 前記開口部がナノウェルである、請求項11に記載の前記方法。
- 伝導性素子を形成することが、前記開口部内に伝導性材料を共形に堆積することを含む、請求項11に記載の前記方法。
- 前記伝導性素子が、前記化学センサの反応領域の下部を画定する内面を含み、前記第2の絶縁体が、前記開口部の上部を画定する内面を含む、請求項11に記載の前記方法。
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US20160077045A1 (en) | 2016-03-17 |
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US9671363B2 (en) | 2017-06-06 |
CN105264366A (zh) | 2016-01-20 |
US20140264472A1 (en) | 2014-09-18 |
EP2972280A1 (en) | 2016-01-20 |
US10422767B2 (en) | 2019-09-24 |
US20180128773A1 (en) | 2018-05-10 |
JP2016510895A (ja) | 2016-04-11 |
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