CN103168341B - 具有轻度掺杂的排出装置的化学敏感的传感器 - Google Patents

具有轻度掺杂的排出装置的化学敏感的传感器 Download PDF

Info

Publication number
CN103168341B
CN103168341B CN201180040544.5A CN201180040544A CN103168341B CN 103168341 B CN103168341 B CN 103168341B CN 201180040544 A CN201180040544 A CN 201180040544A CN 103168341 B CN103168341 B CN 103168341B
Authority
CN
China
Prior art keywords
region
electrode
chemosensitive
lightly doped
doped region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201180040544.5A
Other languages
English (en)
Other versions
CN103168341A (zh
Inventor
K.G.法伊夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Life Technologies Corp
Original Assignee
Life Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Life Technologies Corp filed Critical Life Technologies Corp
Publication of CN103168341A publication Critical patent/CN103168341A/zh
Application granted granted Critical
Publication of CN103168341B publication Critical patent/CN103168341B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Electrochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Biochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Micromachines (AREA)

Abstract

一种具有轻度掺杂的区域的化学敏感的传感器，所述轻度掺杂的区域会影响化学敏感的传感器的栅和电极之间的重叠电容。所述轻度掺杂的区域在化学敏感的传感器的栅区域的下面且邻近地延伸。通过操纵在电极下面的轻度掺杂的区域，实现对化学敏感的传感器的增益的修改。

Description

具有轻度掺杂的排出装置的化学敏感的传感器
相关申请
本申请要求2010年7月3日提交的美国临时专利申请系列号61/361,403的权益，其内容通过引用整体并入本文。
背景技术
电子装置和组件已经在化学和生物学（更一般地，“生命科学”）中得到众多应用，特别是用于检测和测量不同的化学和生物反应，以及鉴别、检测和测量不同的化合物。一种这样的电子装置被称作离子敏感的场效应晶体管，在相关文献中经常表示为ISFET（或pHFET）。ISFET常规地主要在科学和研究团体中采用，用于便利溶液的氢离子浓度（通常表示为“pH”）的测量。
更具体地，ISFET是一种阻抗转化装置，其以类似于MOSFET（金属氧化物半导体场效应晶体管）的方式运行，且为选择性地测量溶液中的离子活性而特别构建（例如，溶液中的氢离子是“分析物”）。在“Thirty years of ISFETOLOGY:what happened in the past30 years and what may happen in the next 30 years,”P. Bergveld, Sens.Actuators, 88（2003）, 第1–20页（所述出版物通过引用整体并入本文）中，给出了ISFET的详细运行理论。
使用常规CMOS（互补金属氧化物半导体）方法来制造ISFET的细节，可以参见：Rothberg, 等人, 美国专利公开号2010/0301398, Rothberg, 等人, 美国专利公开号2010/0282617,和Rothberg等人, 美国专利公开2009/0026082；这些专利公开统称为“Rothberg”，并且都通过引用整体并入本文。但是，除了CMOS以外，也可以使用biCMOS（即，两极的和CMOS）加工，诸如包括PMOS FET阵列的方法，所述阵列具有在外围上的两极结构。可替换地，可以采用其它技术，其中敏感元件可以用三端装置来制作，其中感知的离子会导致信号的形成，所述信号控制3个终端之一；这样的技术还可以包括，例如，GaAs和碳纳米管技术。
以CMOS为例，P-型ISFET制造是基于p-型硅基质，其中形成N-型孔，它构成晶体管“主体”。在N-型孔内形成高度掺杂的P-型（P +）区域S和D，它们构成ISFET的源和排出装置。在N-型孔内还形成高度掺杂的N-型（N +）区域B，以提供与N-型孔的传导体（或“块”）的连接。氧化物层可以安置在源、排出装置和主体接头区上面，穿过它们制作开口，以提供与这些区域的电连接（通过电导体）。在源和排出装置之间，在N-型孔区域上面的位置，可以在氧化物层上面形成多晶硅栅。因为它安置在多晶硅栅和晶体管主体（即，N-型孔）之间，所述氧化物层经常被称作“栅氧化物”。
类似于MOSFET，ISFET的运行是基于由MOS（金属氧化物半导体）电容造成的电荷浓度（和因而通道电导）的调节，所述电容由多晶硅栅、栅氧化物和在源和排出装置之间的孔（例如，N-型孔）区域组成。当在栅和源区域之间施加负电压时，通过剥夺该区域的电子，在该区域和栅氧化物的界面处建立通道。就N-孔而言，所述通道是P-通道（反之亦然）。在N-孔的情况下，所述P-通道在源和排出装置之间延伸，且当栅-源负电势足以从源吸收孔进入通道时，传导电流穿过P-通道。通道开始传导电流时的栅-源电势称作晶体管的阈值电压VTH（当VGS具有大于阈值电压VTH的绝对值时，晶体管传导）。源因此得名，因为它是流过通道的电荷载体（p-通道的孔）的源；类似地，排出装置是电荷载体离开通道的地方。
如Rothberg所述，可以制造具有浮动栅结构的ISFET，所述浮动栅结构如下形成：将多晶硅栅联接到多个金属层上，所述金属层安置在一个或多个额外的氧化物层内，所述氧化物层安置在栅氧化物的上面。浮动栅结构由此得名，因为它与其它的ISFET相关导体在电学上分离；也就是说，它夹在栅氧化物和钝化层之间，所述钝化层安置在浮动栅的金属层（例如，顶金属层）的上面。
如Rothberg进一步所述，ISFET钝化层构成离子敏感的膜，其产生装置的离子灵敏度。与钝化层（尤其可以位于浮动栅结构上面的敏感区域）相接触的分析物溶液（即，含有目标分析物（包括离子）的溶液，或被测试目标分析物存在的溶液）中的分析物（诸如离子）的存在，会改变ISFET的电特征，从而调节流过ISFET的源和排出装置之间的通道的电流。钝化层可以包含多种不同材料中的任一种，以促进对特定离子的灵敏度；例如，包含氮化硅或氮氧化硅以及金属氧化物（诸如硅、铝或钽的氧化物）的钝化层通常会提供对分析物溶液中氢离子浓度（pH）的灵敏度，而包含聚氯乙烯（含有缬氨霉素）的钝化层会提供对分析物溶液中钾离子浓度的灵敏度。适用于钝化层且对其它离子（诸如钠、银、铁、溴、碘、钙和硝酸盐）敏感的物质是已知的，且钝化层可以包含多种材料（例如，金属氧化物、金属氮化物、金属氮氧化物）。关于在分析物溶液/钝化层界面处的化学反应，用于ISFET的钝化层的特定材料的表面可以包括这样的化学基团：其可以为分析物溶液捐献质子，或接受来自分析物溶液的质子，在任意给定的时间在分析物溶液界面处的钝化层的表面上剩下带负电荷的、带正电荷的和中性的位点。
关于离子灵敏度，通常称作“表面电势”的电势差出现在钝化层和分析物溶液的固/液界面处，随敏感区域中的离子浓度而变化，这是由于化学反应（例如，通常包含在敏感区域附近的分析物溶液中的离子对氧化物表面基团的解离）。该表面电势又影响ISFET的阈值电压；因而，ISFET的阈值电压随着在敏感区域附近的分析物溶液中的离子浓度的变化而变化。如Rothberg所述，由于ISFET的阈值电压VTH对离子浓度敏感，源电压VS提供与在ISFET的敏感区域附近的分析物溶液中的离子浓度直接有关的信号。
化学敏感的FET（“chemFET”）的阵列或更具体地ISFET，可以用于监测反应——包括例如核酸（例如，DNA）测序反应，这基于监测在反应过程中存在的、产生的或使用的分析物。更通常地，包括chemFET的大阵列在内的阵列可以用于检测和测量在众多化学和/或生物学过程（例如，生物学或化学反应、细胞或组织培养或监测、神经活性、核酸测序等）中的多种分析物（例如，氢离子、其它离子、非离子型分子或化合物等）的静态和/或动态量或浓度，其中基于这样的分析物测量可以得到有价值的信息。这样的chemFET阵列可以用于检测分析物的方法中和/或通过在chemFET表面处的电荷的变化而监测生物学或化学过程的方法中。ChemFET（或ISFET）阵列的这种用途包括：检测溶液中的分析物，和/或检测在chemFET表面（例如ISFET钝化层）上结合的电荷的变化。
关于ISFET阵列制造的研究记载在下述出版物中：“A large transistor-basedsensor array chip for direct extracellular imaging,”M. J. Milgrew, M. O.Riehle, and D. R. S. Cumming, Sensors and Actuators, B: Chemical, 111-112,(2005), 第347-353页, 和“The development of scalable sensor arrays usingstandard CMOS technology,”M.J. Milgrew, P.A. Hammond, 和D.R.S. Cumming,Sensors and Actuators, B: Chemical，103, (2004), 第37-42页，所述出版物通过引用并入本文，且在下文中共同称作“Milgrew等人”。在Rothberg中，含有关于制造和使用ChemFET或ISFET阵列的描述，所述阵列用于化学检测，包括与DNA测序有关的离子的检测。更具体地，Rothberg描述了使用chemFET阵列（特别是ISFET）来对核酸测序，其包括：将已知的核苷酸掺入反应室中的多个相同核酸中，所述反应室与chemFET接触或电容式联接，其中所述核酸与反应室中的单个珠子结合，并检测在chemFET处的信号，其中信号的检测指示一个或多个氢离子的释放，所述氢离子源自已知的三磷酸核苷酸向合成的核酸中的掺入。
离子敏感的金属氧化物场效应晶体管（ISFET）是已知的。由这些类型的晶体管感知的化学反应会产生强度非常小的电信号，因此可能需要由额外电路进行放大以提供信号增益，使得所述信号可以得到有效处理。所述额外电路在半导体基质上占据可以为其它传感器元件（而不是放大电路）使用的空间。如果化学敏感的传感器具有改进增益以消除对额外增益电路的需求，将是有益的。发明人认识到下述实施方案的益处。
附图说明
图1A-D解释了根据本发明的一个实施方案的半导体基质的构建。
图2A-D解释了根据本发明的一个实施方案，经过掺杂以提供轻度掺杂的排出装置的半导体。
图3解释了在本发明的一个实施方案中，由化学敏感的传感器的各个掺杂区域产生的电容的简图。
图4解释了根据本发明的一个实施方案的化学敏感的传感器的一种示例性结构。
图5解释了根据本发明的一个实施方案的化学敏感的传感器的另一种示例性结构。
具体实施方式
实施方案提供了具有改进增益的化学敏感的传感器。所述化学敏感的传感器可以包括：微孔、浮动栅终端、排出装置终端、源终端和在基质中的一对掺杂区域。所述微孔可以接收在化学反应中使用的样品。所述浮动栅可以与在基质上的栅电极电联接。所述排出装置终端连接和所述源终端连接可以是在所述化学敏感的传感器上的电终端。所述基质中的一对掺杂区域可以各自包括轻度掺杂的区域和高度掺杂的区域。每个轻度掺杂的区域可以在基质上的栅电极之下延伸，且每个高度掺杂的区域可以延伸以分别与所述排出装置终端和所述源终端联接。
另一个实施方案还可以提供具有改进增益的化学敏感的传感器。所述化学敏感的传感器可以包括：微孔、浮动栅终端、排出装置终端、源终端、在基质中的一对电极和一对掺杂区域。所述微孔可以接收在化学反应中使用的样品。所述浮动栅可以与在基质上的栅电极电联接。所述排出装置终端连接和所述源终端连接可以是在所述化学敏感的传感器上的电终端。所述一对电极可以形成在基质上，且所述一对电极中的一个电极在栅电极的任一侧。所述一对掺杂区域中的一个掺杂区域可以包括轻度掺杂的区域和高度掺杂的区域，同时所述一对掺杂区域中的另一个掺杂区域可以仅包括高度掺杂的区域。所述轻度掺杂的区域可以在电极的相应一个电极之下延伸，且每对的高度掺杂的区域延伸以分别与所述排出装置终端或所述源终端联接。
一个实施方案还可以提供一种构建根据本发明的一个实施方案的化学敏感的传感器的方法。所述方法可以形成具有第一电导类型的掺杂剂的基质。可以使用与用于形成基质相同电导类型的掺杂剂来构建外延层，但是以比基质上的掺杂剂更低的密度来制备。电极层可以形成在外延层上，该电极层由与用于形成基质的第一电导类型的掺杂剂不同的第二电导类型的掺杂剂形成。在电极层和基质上的掺杂剂的密度可以是类似的。可以掩蔽和蚀刻所述电极层，以生成栅和电极。使用多向植入技术，可以在所述电极之一附近建立第一轻度掺杂的区域，其中所述第一轻度掺杂的区域由与外延层掺杂剂不同电导类型的掺杂剂形成。可以生产与邻近栅的电极自对齐的扩散结，所述扩散结中的第一个与第一轻度掺杂的区域邻接，其由与栅、电极和轻度掺杂的区域类似的电导类型的掺杂剂形成。通过绝缘层、电介质层、传导层和金属层的交替层，可以形成浮动栅电极、在扩散区上面的电极和电极的触点。
图1A-D解释了根据本发明的一个实施方案的半导体基质的构建。在该实施方案中，可以在多晶硅基质110上制造化学敏感的传感器100，其中如图1A所示形成半导体掺杂，在该实施例中，所述半导体掺杂是P或（P +）-型掺杂剂。如图1B所示，可以在P + 型基质110上形成外延层（P-epi）120，其具有与P + 型基质110类似的电导类型（即，P-型）的掺杂，但是具有更低的密度。当然，可以使用其它掺杂诸如N-型掺杂。
可以在密集掺杂水平，用具有与基质（P +）110和外延层120不同的电导类型（即，N+）的掺杂剂，预掺杂要形成电荷耦合的传感器池的区域。在图1C中，N + 掺杂水平层130可以构建在P-型外延层120和P + 型基质110上面。N + 掺杂水平层130可以用在电荷耦合的化学传感器区域内。使用掩蔽和蚀刻操作，可以在N + 掺杂水平层130的预掺杂区域中形成化学敏感的传感器100的栅133和电极134、136，如图1D所示。本领域普通技术人员会理解，在所述的实施方案中，可以反转所述掺杂水平层。
上面公开的实施方案描述了晶体管的制造，基于施加于栅电极133的信号，所述晶体管可以为电极134、136之间的任意信号提供第一增益。通过将额外掺杂材料插入在基质110内与电极134、136或栅133邻近的位置处，可以修改化学敏感的传感器100的增益。所述额外掺杂材料可以影响晶体管100的电容，这从而修改晶体管100的增益。将结合图3更详细地解释增益修改的细节。
图2A解释了根据本发明的一个实施方案，额外掺杂在与栅电极邻近的外延层中的近似位置。图2A的装置可以具有与图1C的装置类似的基质结构。化学敏感的传感器200可以包括：第一电导类型的掺杂剂（即，P-型）的外延层220，从第二电导类型的掺杂剂（即，N-型）形成的栅电极215，和轻度掺杂的区域223、225。轻度掺杂的区域223、225也称作轻度掺杂的排出装置（LDD），它们可以具有与栅电极215相同电导类型的掺杂剂（即，P-型）。通过在轻度掺杂的区域223、225中注射比栅电极215更低密度的掺杂剂，可以修改化学敏感的传感器200的增益。所述轻度掺杂的区域223、225可以如下形成：例如，使用多向注射技术，将更低密度的掺杂剂注射进轻度掺杂的区域223、225中，在栅电极215的下面。当然，也可以使用其它技术。可以在轻度掺杂的区域之前或之后，添加所述晶体管的源和排出装置终端的高度掺杂的区域。图2B解释了扩散结223、225的布局，所述扩散结可以是高度掺杂的区域，用于与化学敏感的传感器220的源和排出装置终端联接，针对栅电极215和轻度掺杂的区域223、225。使用已知的掺杂技术，可以用高密度掺杂剂（其属于与栅电极215相同电导类型的掺杂剂）构建高度掺杂的区域223、225。
图2C和2D解释了具有改进掺杂的化学敏感的传感器的一个替代实施方案。图2C解释了这样的化学敏感的传感器202：其除了具有栅210以外，还可以具有电极214、216。在图2C中，可以掩蔽化学敏感的传感器202的栅210和电极214、216，以使多向掺杂植入物插入各个电极214、216附近，从而建立轻度掺杂的区域227、229或轻度掺杂的排出装置（LDD）。所述LDD 227和229可以由与外延层不同的电导类型（即，N +）形成。在所解释的实施方案中，所述LDD 227、229可以形成在化学敏感的传感器202内，在电极214、216的下面。可替换地，使用本领域已知的替代性的植入方法，可以植入LDD 227、229。
光致抗蚀剂层可以用于掩蔽所需区域，并形成扩散结235、237，所述扩散结可以与邻近栅210的电极214、216自对齐，且与LDD 227、229邻近。所述扩散区235和237可以由与栅210、电极214、216和LDD 227、229类似的电导类型形成，且不同于外延层221的电导类型。在图2D中，N + 扩散结237和239可以是高度掺杂的区域，且可以使用半导体领域已知的任意常规技术形成。另外，也可以形成其它结。可以在这样的掺杂剂密度水平掺杂所述轻度掺杂的区域227、229：所述掺杂剂密度水平小于扩散结237和239的掺杂剂密度水平。
图3的简图解释了与根据本发明的一个实施方案的化学敏感的传感器的各个掺杂区域有关的电容。解释的化学敏感的传感器300可以包括：栅电极384和扩散区391和395，它们构建在外延层397上。栅电极384和扩散区391、395的掺杂显示为N-型掺杂，而外延层397显示为P-型。当然，可以反转所述掺杂。所述扩散区391和395可以在高密度掺杂。所述扩散区391可以与化学敏感的传感器300的源终端接触，所述扩散区395可以与化学敏感的传感器300的排出装置终端接触。当然，所述源终端和所述排出装置终端可以互换。所述栅电极384可以与将来提供信号的浮动栅（未显示）连接。取决于来自浮动栅的信号的强度，可以根据已知的晶体管原理诱导通道396来传导。在排出装置扩散区395上的信号可以穿过通道396到达源扩散区391。另外，由于传感器300的制造，栅-至-排出装置电容Cgd可以存在于栅电极384和排出装置扩散区395之间。类似地，栅-至-源电容Cgs可以存在于栅电极384和源扩散区391之间。这些电容Cgd和Cgs的值可以影响传感器300的信号增益。所述电容Cgd和Cgs可以是扩散区391和395的掺杂与栅电极384之间的接头区的结果。电容Cgd和Cgs的一部分可以归于在扩散区和栅电极384的接头处的寄生电容。通过将轻度掺杂的区域394和392分别加入排出装置和源扩散区395和391，可以调节寄生电容的量。所述轻度掺杂的区域394和392可以在比高度掺杂的扩散区391和395更低的密度掺杂，但是可以将额外区域添加在扩散区395和391与栅电极384的接头处。由于所述额外区域，额外寄生电容Cpara1和/或Cpara2可以存在于接头区处。所述轻度掺杂的区域中的掺杂密度将会影响建立的寄生电容Cpara1和/或Cpara2的量。因此，在栅384/排出装置扩散区395处的总电容可以大致等于Cgd+ Cpara1，而在栅384/源扩散区391处的总电容可以大致等于Cgs + Cpara2。
寄生电容值Cpara1和/或Cpara2的存在，可以改变传感器300的增益。在具有化学敏感的传感器（例如，ISFET）和行选晶体管的像素中，可以以源极跟随器构型或以公共源构型读出像素。所述寄生电容值可以以不同方式影响像素的增益，所述方式取决于使用哪种构型。在源极跟随器构型中，整体（1）的增益是最大增益。寄生电容器用于减弱增益。这是因为，在流体界面处的信号与化学敏感的传感器的浮动栅电容式联接。所述寄生电容器产生电容式分压器，后者会减少在所述栅处发生的电荷至电压转换。因此，在源极跟随器构型中，消除LDD区域和使寄生电容最小化会提供最大增益。在公共源构型中，希望控制寄生电容以便建立负反馈，从而建立系统性增益值。在没有任何寄生电容的情况下，所述像素将在读出期间开环运行，非常大的增益没有得到过程参数的控制。因此，因为LDD区域可以被较好地控制和在装置之间一致地匹配，所述增益可以由这些建立的电容值来控制。在公共源构型中，最重要的重叠电容器是Cgd。所述像素的增益大致等于双层电容除以Cgd。作为实例，如果所述双层电容是3fF且Cgd的值是0.3fF，那么所述像素的增益是大约10。当它受到LDD控制时，这会变成较好地控制的参数。为了减少增益，Cgd随着LDD延伸增大而增加。为了增加增益，将LDD延伸减少至更低的Cgd。不希望具有小至不能得到较好控制的Cgd。因此，希望控制LDD区域以实现在1-20范围内的增益。
例如，在另一个实施方案中，可以消除与排出装置扩散区395结合的轻度掺杂的区域394，在传感器300上可以仅存在轻度掺杂的区域392。在该情况下，归因于源终端391的电容可以等于Cgs + Cpara2，而归因于排出装置终端395的电容可以仅等于Cds。在该实施方案中的传感器300的增益不同于上述存在寄生电容Cpara 1和Cpara 2的实施方案。因此，轻度掺杂的区域392和/或394的添加，可以用于改变传感器300的增益，并从而消除放大传感器300信号可能需要的额外电路。
根据本发明的一个实施方案的化学敏感的传感器的结构的一个示例性图示可以参见图4。所述化学敏感的传感器400可以包括：微孔部分401、堆积部分403和基质部分405。所述微孔部分401可以包括微孔410，所述微孔410可以具有在微孔410底部附近的钝化层，诸如氧化物层415。要检测的化学反应可以在微孔410中发生，且被堆积部分403中的浮动栅电极420检测到。
所述堆积部分403可以包括：浮动栅电极420，其堆积在绝缘层和电介质层432、434、436、461、465、469的交替层上面；传导层和金属层430、452、454、456、471、475和479；和栅电极484。所述基质部分405可以包括：可以用P + 掺杂剂掺杂的基质499、也可以是P-型掺杂剂的外延层497、和N + 掺杂区域491（源）和493（排出装置）。所述N + 掺杂区域491（源）和493（排出装置）可以是高度掺杂的区域，且所述用491’和493’标记的区域可以是轻度掺杂的区域。所述通道494可以变成传导性的，这基于从浮动栅420施加于栅484上的信号。当然，可以反转在基质405中、在区域491和493中、在外延层497中和在栅484中的掺杂。
根据运行模式，所述化学敏感的传感器400可以具有这样的信号增益：所述信号增益部分地依赖于由轻度掺杂的区域491’和/或493’（如果存在的话）提供的额外寄生电容。化学敏感的传感器400的实施方案可以是NMOS或PMOS装置，例如，形成为具有在浮动栅上面的微孔的标准NMOS或PMOS装置。所述微孔结构410可以含有氧化物或其它材料415，它们可以运输化学样品（例如，特定离子），以感知在化学敏感的传感器400的浮动栅420上的电荷。该电荷转移然后可以由与化学敏感的传感器400联接的读电路（未显示）解读，且电荷转移量可以代表在微孔410中的样品内所含有的离子的量。以此方式，阵列中的每个化学敏感的传感器400可以用于检测微孔410中的样品内的局部变异，例如，样品液体的离子浓度，其呈现在化学敏感的传感器400的阵列（未显示）上面。
将参照图5描述根据本发明另一个实施方案的化学敏感的传感器的另一种示例性结构。所述化学敏感的传感器500可以包括：微孔部分501、堆积部分503和基质部分505。所述微孔部分501可以包括微孔510，所述微孔510可以具有在微孔510底部附近的钝化层，诸如氧化物层515。要检测的化学反应可以在微孔510中发生，且被堆积部分503中的浮动栅电极520检测到。
所述堆积部分503可以包括：浮动栅电极520，其堆积在绝缘层和电介质层542、545、546、561、565、569以及传导层和金属层552、555、556、571、574、575、577和579的交替层上面。可以为电极581和585形成栅电极584和触电564、567。所述基质部分505可以包括：可以用P + 掺杂剂掺杂的基质599、也可以是P-型掺杂剂的外延层597、和N + 掺杂区域591（源）和595（排出装置）。当然，可以反转在基质505中的掺杂。所述电极581和585可以积累来自栅电极584的电荷，以促进限制和分离。电极581和585与栅电极584的电荷耦合可以形成像素，所述像素可以放入阵列中用于可寻址读出。从栅电极584至电极581和585的电荷转移，可以增加晶体管增益。此外，寄生电容的操纵也可以影响电荷转移，如上面结合图3所解释的，其也会影响晶体管增益。通过添加轻度掺杂的区域591’和/或595’（它们可以在比高度掺杂的区域591和595更低的密度掺杂），可以操纵寄生电容。另外，VR终端563和Tx终端585也可以影响电荷转移，所述终端可以起电荷包的屏障或孔的作用。
应当指出，预见到使用更多或更少金属层和绝缘层的实施方案，前述实施方案仅仅是示例性的实施例。另外，电极的数目可以随不同的实施方案有很大变化。在形成浮动栅电极以后，可以如下形成任意额外的电极和电极触点、化学敏感的传感器（包括离子）：用原硅酸四乙酯（TEOS）或氧化物建立绝缘层或电介质层，并在浮动栅电极上面蚀刻微孔。所述微孔然后可以具有钝化层，所述钝化层至少放置在所述微孔的底部中。使用下述的技术，使用从与上述那些类似的方法制备的结构，可以感知化学试剂和离子。前述结构的变化实施方案是可能的。例如，可以使用单层多晶硅形成栅电极。可以使用N +或P + 电极制作所述结构。还预见到，使用单一电极多晶硅间隙间隔的实施方案，会使得在足够小的过程节点（诸如0.13 um和以下）对电极进行电荷耦合成为可能。0.13 um和以下的过程节点会使电荷耦合结构能够在当前的CMOS工艺中工作。但是，应当指出，所述过程节点不限于这样小，可以容易地更大。还预见到这样的实施方案：其采用表面通道、埋藏的通道，和使用离子植入来形成通道堵塞。
另外，预见到这样的实施方案：其使用埋藏的电荷转移，具有多种N-型植入物以建立希望的电势特性，从而避免界面态和避免闪烁噪音。
应当指出，前面的描述仅仅提供了示例性的实施方案，本领域技术人员会容易地明白用于制造本文公开的化学敏感的传感器的不同方法。例如，使用掩蔽技术，可以在栅和电极之前形成轻度掺杂的排出装置。因此，本文讨论的步骤不一定以任何特定次序执行，且可以使用本领域已知的任意半导体技术来执行。
本文具体地解释和描述了本发明的几个实施方案。但是，应当理解，上述教导覆盖本发明的改进和变体。在其它情况下，没有详细描述公知的操作、组件和电路，以免影响对实施例的理解。可以理解，本文所公开的具体结构和功能细节可以是代表性的，而不一定限制实施方案的范围。
本领域技术人员从前面的描述可以理解，本发明可以以多种形式实现，且各个实施方案可以单独地或组合地实现。因此，尽管已经结合其具体实施例描述了本发明的实施方案，不应如此限制本发明的实施方案和/或方法的真实范围，因为熟练的从业人员在研究附图、说明书和下述权利要求以后会明白其它修改。
各个实施方案可使用硬件元件、软件元件或者它们的结合来实现。硬件元件的实例可以包括：处理器、微处理器、电路、电路元件(例如晶体管、电阻器、电容器、电感器等)、集成电路、专用集成电路(ASIC)、可编程逻辑装置(PLD)、数字信号处理器(DSP)、现场可编程门阵列(FPGA)、逻辑门、寄存器、半导体器件、芯片、微芯片、芯片组等。软件的实例可以包括：软件组件、程序、应用、计算机程序、应用程序、系统程序、机器程序、操作系统软件、中间件、固件、软件模块、例程、子例程、函数、方法、过程、软件接口、应用程序接口(API)、指令集、计算代码、计算机代码、代码段、计算机代码段、字、值、符号或者它们的任何结合。确定实施方案是否使用硬件元件和/或软件元件来实现，可根据任何数量的因素而改变，所述因素例如希望的计算速率、功率级、耐热性、处理周期预算、输入数据速率、输出数据速率、存储器资源、数据总线速度以及其它设计或性能限制。
一些实施方案可以例如使用计算机可读介质或产品来实现，所述介质或产品可存储指令或指令集，所述指令或指令集如果被机器执行，会使所述机器执行根据实施方案的方法和/或操作。这样的机器可包括例如：任何适当的处理平台、计算平台、计算装置、处理装置、计算系统、处理系统、计算机、处理器等，并且可使用硬件和/或软件的任何适当组合来实现。所述计算机可读介质或产品可包括例如：任何适当类型的存储器单元、存储器装置、存储器产品、存储器介质、存储装置、存储产品、存储介质和/ 或存储单元，例如存储器、可移动或不可移动介质、可擦除或不可擦除介质、可写或可重写介质、数字或模拟介质、硬盘、软盘、光盘只读存储器(CD-ROM)、可记录光盘(CD-R)、可重写光盘(CD-RW)、光盘、磁介质、磁光介质、可移动存储卡或盘、各种类型的数字多功能光盘(DVD)、磁带、盒式磁带等。所述指令可以包括任何适当类型的代码，例如源代码、编译代码、解释代码、可执行代码、静态代码、动态代码、加密代码等，所述代码使用任何适当的高级的、低级的、面向对象的、可视的、编译的和/或解释的编程语言来实现。

Claims (23)

1.一种化学敏感的传感器，其包括：
与基质上的栅电极电联接的浮动栅；
排出装置终端连接；
源终端连接；
在所述基质中的一对掺杂区域，每个掺杂区域包括轻度掺杂的区域和高度掺杂的区域，其中每个所述轻度掺杂的区域在所述基质上的所述栅电极之下延伸，且每个所述高度掺杂的区域延伸以分别与所述排出装置终端和所述源终端联接。
2.根据权利要求1所述的化学敏感的传感器，其另外包括：
用于接收样品的微孔。
3.根据权利要求2所述的化学敏感的传感器，其中所述微孔具有在孔底部处与所述浮动栅邻近的氧化物层。
4.根据权利要求1所述的化学敏感的传感器，其中寄生电容存在于所述栅电极和轻度掺杂的区域下面之间。
5.根据权利要求1所述的化学敏感的传感器，其中根据在所述轻度掺杂的区域中使用的掺杂剂的量，修改所述化学敏感的传感器的增益。
6.根据权利要求1所述的化学敏感的传感器，其中在比所述高度掺杂的区域的掺杂剂密度水平更小的掺杂剂密度水平，掺杂所述轻度掺杂的区域。
7.一种化学敏感的传感器，其包括：
与基质上的栅电极电联接的浮动栅；
排出装置终端连接；
源终端连接；
形成在所述基质上的一对电极，且所述一对电极中的一个电极在所述栅电极的任一侧；
在所述基质中的一对掺杂区域，所述一对掺杂区域中的一个掺杂区域包括轻度掺杂的区域和高度掺杂的区域，其中所述轻度掺杂的区域在所述电极的相应一个电极之下延伸，且每对的高度掺杂的区域延伸以分别与所述排出装置终端和所述源终端联接。
8.根据权利要求7所述的化学敏感的传感器，其另外包括：
用于接收生物材料的微孔。
9.根据权利要求8所述的化学敏感的传感器，其中所述微孔具有在孔底部处与所述浮动栅邻近的氧化物层。
10.根据权利要求7所述的化学敏感的传感器，其中所述一对电极中的一个电极用作参比电极和用作电荷包的屏障或孔。
11.根据权利要求7所述的化学敏感的传感器，其中所述一对电极中的一个电极用作扩散电极并且促进电荷包。
12.一种化学敏感的传感器，其包括：
与栅电极电联接的浮动栅；
用轻度掺杂的区域和高度掺杂的区域形成的源；和
用轻度掺杂的区域和高度掺杂的区域形成的排出装置；
其中所述源的轻度掺杂的区域和所述排出装置的轻度掺杂的区域在所述浮动栅附近向彼此延伸进入通道区域中。
13.根据权利要求12所述的化学敏感的传感器，所述源和所述排出装置的高度掺杂的区域包括：
比所述源和所述排出装置的轻度掺杂的区域更大的掺杂剂浓度。
14.根据权利要求12所述的化学敏感的传感器，其中所述源和所述排出装置的高度掺杂的区域远离所述通道区域和邻近所述浮动栅的区域地延伸。
15.根据权利要求12所述的化学敏感的传感器，其中所述源的高度掺杂的区域与金属触点联接。
16.根据权利要求12所述的化学敏感的传感器，其中所述排出装置的高度掺杂的区域与金属触点联接。
17.根据权利要求12所述的化学敏感的传感器，其中所述源的轻度掺杂的区域的体积大于所述排出装置的轻度掺杂的区域。
18.根据权利要求12所述的化学敏感的传感器，其中所述源和所述排出装置的轻度掺杂的区域造成增加的电容，所述增加的电容限制所述化学敏感的传感器的增益。
19.一种制作化学敏感的传感器的方法，所述方法包括：
形成具有第一电导类型的掺杂剂的基质；
使用与用于形成所述基质相同电导类型的掺杂剂来构建外延层，但是以比所述基质上的掺杂剂更低的密度来制备；
在所述外延层上形成电极层，所述电极层由与用于形成所述基质的第一电导类型的掺杂剂不同的第二电导类型的掺杂剂形成，其中在所述电极层和所述基质上的掺杂剂均为密集掺杂水平或轻度掺杂水平；
掩蔽和蚀刻所述电极层，以生成栅和电极；
使用多向植入技术，在所述电极之一附近建立第一轻度掺杂的区域，其中所述第一轻度掺杂的区域由与外延层掺杂剂不同电导类型的掺杂剂形成；
生产与邻近所述栅的电极自对齐的扩散结，所述扩散结中的第一个与第一轻度掺杂的区域邻接，其由与所述栅、电极和轻度掺杂的区域类似的电导类型的掺杂剂形成；和
通过绝缘层、电介质层、传导层和金属层的交替层，形成浮动栅电极、在扩散区上面的电极和电极的触点。
20.根据权利要求19所述的方法，其另外包括：
使用多向植入技术，在所述电极之一附近建立第二轻度掺杂的区域，其中所述第二轻度掺杂的区域由与外延层掺杂剂不同电导类型的掺杂剂形成。
21.根据权利要求20所述的方法，其中所述扩散结中的第二个与第二轻度掺杂的区域邻接。
22.根据权利要求19所述的方法，其另外包括：
在扩散区上形成额外电极。
23.根据权利要求19所述的方法，其另外包括：
形成微孔，以容纳样品在所述浮动栅上面。
CN201180040544.5A 2010-07-03 2011-06-30 具有轻度掺杂的排出装置的化学敏感的传感器 Expired - Fee Related CN103168341B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US36140310P 2010-07-03 2010-07-03
US61/361403 2010-07-03
PCT/US2011/042665 WO2012006222A1 (en) 2010-07-03 2011-06-30 Chemically sensitive sensor with lightly doped drains

Publications (2)

Publication Number Publication Date
CN103168341A CN103168341A (zh) 2013-06-19
CN103168341B true CN103168341B (zh) 2016-10-05

Family

ID=45399045

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180040544.5A Expired - Fee Related CN103168341B (zh) 2010-07-03 2011-06-30 具有轻度掺杂的排出装置的化学敏感的传感器

Country Status (6)

Country Link
US (3) US8653567B2 (zh)
EP (1) EP2589065B1 (zh)
JP (1) JP5876044B2 (zh)
CN (1) CN103168341B (zh)
TW (1) TWI527245B (zh)
WO (1) WO2012006222A1 (zh)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11339430B2 (en) 2007-07-10 2022-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
EP4134667A1 (en) 2006-12-14 2023-02-15 Life Technologies Corporation Apparatus for measuring analytes using fet arrays
US8349167B2 (en) 2006-12-14 2013-01-08 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
US8262900B2 (en) 2006-12-14 2012-09-11 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US8470164B2 (en) 2008-06-25 2013-06-25 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US20100301398A1 (en) 2009-05-29 2010-12-02 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US20100137143A1 (en) 2008-10-22 2010-06-03 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US20120261274A1 (en) 2009-05-29 2012-10-18 Life Technologies Corporation Methods and apparatus for measuring analytes
US8673627B2 (en) 2009-05-29 2014-03-18 Life Technologies Corporation Apparatus and methods for performing electrochemical reactions
US8776573B2 (en) 2009-05-29 2014-07-15 Life Technologies Corporation Methods and apparatus for measuring analytes
CN109449171A (zh) 2010-06-30 2019-03-08 生命科技公司 用于检测和测量化学反应和化合物的晶体管电路
EP2588851B1 (en) 2010-06-30 2016-12-21 Life Technologies Corporation Ion-sensing charge-accumulation circuit and method
JP5952813B2 (ja) 2010-06-30 2016-07-13 ライフ テクノロジーズ コーポレーション Ｉｓｆｅｔアレイをテストする方法及び装置
US11307166B2 (en) 2010-07-01 2022-04-19 Life Technologies Corporation Column ADC
WO2012006222A1 (en) 2010-07-03 2012-01-12 Life Technologies Corporation Chemically sensitive sensor with lightly doped drains
CN106198656B (zh) 2010-08-18 2018-12-11 生命科技股份有限公司 用于电化学检测装置的微孔的化学涂层
EP2617061B1 (en) 2010-09-15 2021-06-30 Life Technologies Corporation Methods and apparatus for measuring analytes
EP2619564B1 (en) 2010-09-24 2016-03-16 Life Technologies Corporation Matched pair transistor circuits
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US8747748B2 (en) 2012-01-19 2014-06-10 Life Technologies Corporation Chemical sensor with conductive cup-shaped sensor surface
US9194840B2 (en) * 2012-01-19 2015-11-24 Life Technologies Corporation Sensor arrays and methods for making same
US8821798B2 (en) 2012-01-19 2014-09-02 Life Technologies Corporation Titanium nitride as sensing layer for microwell structure
US8786331B2 (en) 2012-05-29 2014-07-22 Life Technologies Corporation System for reducing noise in a chemical sensor array
US9080968B2 (en) 2013-01-04 2015-07-14 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US8962366B2 (en) 2013-01-28 2015-02-24 Life Technologies Corporation Self-aligned well structures for low-noise chemical sensors
US8841217B1 (en) 2013-03-13 2014-09-23 Life Technologies Corporation Chemical sensor with protruded sensor surface
US8963216B2 (en) 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
CN105051525B (zh) 2013-03-15 2019-07-26 生命科技公司 具有薄导电元件的化学设备
US20140264472A1 (en) 2013-03-15 2014-09-18 Life Technologies Corporation Chemical sensor with consistent sensor surface areas
US9116117B2 (en) 2013-03-15 2015-08-25 Life Technologies Corporation Chemical sensor with sidewall sensor surface
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
WO2014149778A1 (en) 2013-03-15 2014-09-25 Life Technologies Corporation Chemical sensors with consistent sensor surface areas
US20140336063A1 (en) 2013-05-09 2014-11-13 Life Technologies Corporation Windowed Sequencing
US10458942B2 (en) 2013-06-10 2019-10-29 Life Technologies Corporation Chemical sensor array having multiple sensors per well
US9476853B2 (en) 2013-12-10 2016-10-25 Life Technologies Corporation System and method for forming microwells
US9618474B2 (en) 2014-12-18 2017-04-11 Edico Genome, Inc. Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
US10020300B2 (en) 2014-12-18 2018-07-10 Agilome, Inc. Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
US9859394B2 (en) 2014-12-18 2018-01-02 Agilome, Inc. Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
US11782057B2 (en) 2014-12-18 2023-10-10 Cardea Bio, Inc. Ic with graphene fet sensor array patterned in layers above circuitry formed in a silicon based cmos wafer
US11921112B2 (en) 2014-12-18 2024-03-05 Paragraf Usa Inc. Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
TWI794007B (zh) 2014-12-18 2023-02-21 美商生命技術公司 積體電路裝置、感測器裝置及積體電路
EP3235010A4 (en) 2014-12-18 2018-08-29 Agilome, Inc. Chemically-sensitive field effect transistor
US10006910B2 (en) 2014-12-18 2018-06-26 Agilome, Inc. Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
KR20170097712A (ko) 2014-12-18 2017-08-28 라이프 테크놀로지스 코포레이션 대형 fet 어레이를 사용한 분석물 측정을 위한 방법과 장치
US9857328B2 (en) 2014-12-18 2018-01-02 Agilome, Inc. Chemically-sensitive field effect transistors, systems and methods for manufacturing and using the same
EP3268496A4 (en) * 2015-03-09 2018-09-05 Agilome, Inc. Graphene fet devices, systems, and methods of using the same for sequencing nucleic acids
WO2016147798A1 (ja) * 2015-03-19 2016-09-22 国立大学法人豊橋技術科学大学 化学・物理現象検出装置
CN113945621A (zh) * 2015-08-25 2022-01-18 生命技术公司 深微阱设计及其制造方法
CN108369200B (zh) * 2015-12-16 2020-10-27 松下知识产权经营株式会社 气体传感器以及气体传感系统
WO2017201081A1 (en) 2016-05-16 2017-11-23 Agilome, Inc. Graphene fet devices, systems, and methods of using the same for sequencing nucleic acids
RU2634324C1 (ru) * 2016-05-18 2017-10-25 Публичное акционерное общество "Интерсофт Евразия", ПАО "Интерсофт Евразия" Сенсор ионизирующего излучения на основе кремния бестигельной зонной плавки р-типа проводимости
US20180052106A1 (en) * 2016-08-17 2018-02-22 Kerry Gunning Dual detection scheme for dna sequencing
EP3296727B1 (en) * 2016-09-19 2019-04-17 Murata Integrated Passive Solutions Electrical stimulation and monitoring device
US10739302B2 (en) 2017-11-02 2020-08-11 International Business Machines Corporation Bio and chemical sensor with increased sensitivity
FR3077926B1 (fr) 2018-02-15 2023-04-14 St Microelectronics Crolles 2 Sas Dispositif de detection, en particulier incorpore dans un ph-metre, et procede de realisation correspondant.
US10900927B2 (en) * 2018-03-21 2021-01-26 University Of South Carolina Graphene field effect transistors for detection of ions
US10788446B1 (en) 2019-04-09 2020-09-29 International Business Machines Corporation Ion-sensitive field-effect transistor with micro-pillar well to enhance sensitivity
US11741329B2 (en) 2019-09-26 2023-08-29 Best Theratronics, Ltd. Low power non-volatile non-charge-based variable supply RFID tag memory
US11604290B2 (en) * 2019-09-26 2023-03-14 Best Theratronics, Ltd. Low power dual-sensitivity FG-MOSFET sensor for a wireless radiation dosimeter
KR20220030802A (ko) * 2020-09-03 2022-03-11 에스케이하이닉스 주식회사 이미지 센싱 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5151759A (en) * 1989-03-02 1992-09-29 Thunderbird Technologies, Inc. Fermi threshold silicon-on-insulator field effect transistor
US5439839A (en) * 1994-07-13 1995-08-08 Winbond Electronics Corporation Self-aligned source/drain MOS process

Family Cites Families (492)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3531258A (en) 1967-11-16 1970-09-29 Us Health Education & Welfare Apparatus for the automated synthesis of peptides
DE2413703C3 (de) 1974-03-21 1979-01-04 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V., 3400 Goettingen Ventilanordnung für die Zuführung flüssiger oder gasförmiger Substanzen zu einem Verarbeitungsgefäß
JPS5530312B2 (zh) 1975-01-16 1980-08-09
JPS57136158A (en) 1981-02-17 1982-08-23 Sumitomo Electric Ind Ltd Ph electrode
GB2096824A (en) 1981-04-09 1982-10-20 Sibbald Alastair Chemically sensitive field effect transistor
DE3269784D1 (en) 1981-05-15 1986-04-17 Licentia Gmbh Method for measuring ionic concentrations
FR2510260A1 (fr) 1981-07-24 1983-01-28 Suisse Fond Rech Microtech Dispositif semiconducteur sensible aux ions
US4438354A (en) 1981-08-14 1984-03-20 American Microsystems, Incorporated Monolithic programmable gain-integrator stage
US4411741A (en) 1982-01-12 1983-10-25 University Of Utah Apparatus and method for measuring the concentration of components in fluids
US4558845A (en) 1982-09-22 1985-12-17 Hunkapiller Michael W Zero dead volume valve
NL8302964A (nl) 1983-08-24 1985-03-18 Cordis Europ Inrichting voor het bepalen van de aktiviteit van een ion (pion) in een vloeistof.
NL8303792A (nl) 1983-11-03 1985-06-03 Cordis Europ Inrichting voorzien van een op een isfet gebaseerd meetcircuit; voor toepassing in het meetcircuit geschikte isfet en werkwijze ter vervaardiging van een in het meetcircuit toe te passen isfet.
JPS60128345A (ja) 1983-12-15 1985-07-09 Olympus Optical Co Ltd イオン濃度測定装置
US4660063A (en) 1985-03-18 1987-04-21 General Electric Company Immersion type ISFET
DE3513168A1 (de) 1985-04-12 1986-10-16 Thomas 8000 München Dandekar Biosensor bestehend aus einem halbleiter auf silizium oder kohlenstoffbasis (elektronischer teil) und nukleinbasen (od. anderen biol. monomeren)
US4743954A (en) 1985-06-07 1988-05-10 University Of Utah Integrated circuit for a chemical-selective sensor with voltage output
US4863849A (en) 1985-07-18 1989-09-05 New York Medical College Automatable process for sequencing nucleotide
EP0213825A3 (en) 1985-08-22 1989-04-26 Molecular Devices Corporation Multiple chemically modulated capacitance
GB8522785D0 (en) 1985-09-14 1985-10-16 Emi Plc Thorn Chemical-sensitive semiconductor device
US5140393A (en) 1985-10-08 1992-08-18 Sharp Kabushiki Kaisha Sensor device
US4822566A (en) 1985-11-19 1989-04-18 The Johns Hopkins University Optimized capacitive sensor for chemical analysis and measurement
JPS62237349A (ja) 1986-04-08 1987-10-17 Nec Corp 水素イオン濃度分布測定装置
US4864229A (en) 1986-05-03 1989-09-05 Integrated Ionics, Inc. Method and apparatus for testing chemical and ionic sensors
US4722830A (en) 1986-05-05 1988-02-02 General Electric Company Automated multiple stream analysis system
US5082788A (en) 1986-08-27 1992-01-21 Porton Instruments, Inc. Method of sequencing peptides and proteins using a valve block assembly
DE3639949A1 (de) 1986-11-22 1988-06-09 Diagen Inst Molekularbio Verfahren zur trennung von langkettigen nukleinsaeuren
US5113870A (en) 1987-05-01 1992-05-19 Rossenfeld Joel P Method and apparatus for the analysis, display and classification of event related potentials by interpretation of P3 responses
US4927736A (en) 1987-07-21 1990-05-22 Hoechst Celanese Corporation Hydroxy polyimides and high temperature positive photoresists therefrom
JP2825206B2 (ja) 1988-02-08 1998-11-18 アイースタット コーポレーション 金属酸化物電極
US4971903A (en) 1988-03-25 1990-11-20 Edward Hyman Pyrophosphate-based method and apparatus for sequencing nucleic acids
US4874499A (en) 1988-05-23 1989-10-17 Massachusetts Institute Of Technology Electrochemical microsensors and method of making such sensors
US5200051A (en) 1988-11-14 1993-04-06 I-Stat Corporation Wholly microfabricated biosensors and process for the manufacture and use thereof
US4893088A (en) 1988-11-16 1990-01-09 Harris Corporation Transimpedance focal plane processor
US5237016A (en) 1989-01-05 1993-08-17 Siska Diagnostics, Inc. End-attachment of oligonucleotides to polyacrylamide solid supports for capture and detection of nucleic acids
JPH02250331A (ja) * 1989-03-24 1990-10-08 Hitachi Ltd 半導体装置およびその製造方法
EP0394598B1 (en) 1989-04-28 1996-03-06 International Business Machines Corporation An improved gate array cell having FETS of different and optimized sizes
JP2789109B2 (ja) * 1989-05-25 1998-08-20 三菱電機株式会社 半導体装置およびその製造方法
US5143854A (en) 1989-06-07 1992-09-01 Affymax Technologies N.V. Large scale photolithographic solid phase synthesis of polypeptides and receptor binding screening thereof
US6919211B1 (en) 1989-06-07 2005-07-19 Affymetrix, Inc. Polypeptide arrays
JP3001104B2 (ja) 1989-10-04 2000-01-24 オリンパス光学工業株式会社 センサー構造体及びその製造法
IT1238117B (it) 1989-10-16 1993-07-07 Marelli Autronica Circuito a condensatori commutati, integrabile in tecnologia mos, con funzione di raddrizzatore a doppia semionda e di integratore
US5110441A (en) 1989-12-14 1992-05-05 Monsanto Company Solid state ph sensor
JP3120237B2 (ja) 1990-01-10 2000-12-25 セイコーインスツルメンツ株式会社 イメージセンサ
US5126759A (en) 1990-06-26 1992-06-30 Eastman Kodak Company Non-impact printer with token bit control of data and current regulation signals
US5202576A (en) 1990-08-29 1993-04-13 Texas Instruments Incorporated Asymmetrical non-volatile memory cell, arrays and methods for fabricating same
US5317407A (en) 1991-03-11 1994-05-31 General Electric Company Fixed-pattern noise correction circuitry for solid-state imager
KR940010562B1 (ko) 1991-09-06 1994-10-24 손병기 Ta_2O_5수소이온 감지막을 갖는 감이온 전계효과 트랜지스터의 제조방법
JPH0580115A (ja) 1991-09-19 1993-04-02 Fujitsu Ltd 不揮発性ランダムアクセスメモリ装置及び不揮発性ランダムアクセスメモリ装置における浮遊ゲート電圧レベルの検出方法
WO1993008464A1 (en) 1991-10-21 1993-04-29 Holm Kennedy James W Method and device for biochemical sensing
US5846708A (en) 1991-11-19 1998-12-08 Massachusetts Institiute Of Technology Optical and electrical methods and apparatus for molecule detection
US5637469A (en) 1992-05-01 1997-06-10 Trustees Of The University Of Pennsylvania Methods and apparatus for the detection of an analyte utilizing mesoscale flow systems
JPH0645875A (ja) 1992-07-24 1994-02-18 Nec Corp スイッチトキャパシタ回路
DE4232532A1 (de) 1992-09-29 1994-04-28 Ct Fuer Intelligente Sensorik Anordnung und Verfahren zur Erhöhung der Zuverlässigkeit von ionensensitiven Feldeffekttransistoren
US5284566A (en) 1993-01-04 1994-02-08 Bacharach, Inc. Electrochemical gas sensor with wraparound reference electrode
US5436149A (en) 1993-02-19 1995-07-25 Barnes; Wayne M. Thermostable DNA polymerase with enhanced thermostability and enhanced length and efficiency of primer extension
WO1994026029A1 (en) 1993-04-26 1994-11-10 Unifet Incorporated Method and apparatus for multiplexing devices having long thermal time constants
DE69333722T2 (de) 1993-05-31 2005-12-08 Stmicroelectronics S.R.L., Agrate Brianza Verfahren zur Verbesserung der Haftung zwischen Dielektrikschichten, an ihrer Grenzfläche, in der Herstellung von Halbleiterbauelementen
JP3413664B2 (ja) 1993-08-12 2003-06-03 ソニー株式会社 電荷転送装置
US5965452A (en) 1996-07-09 1999-10-12 Nanogen, Inc. Multiplexed active biologic array
GB9323305D0 (en) 1993-11-11 1994-01-05 Medinnova Sf Isoaltion of nucleic acid
US5414284A (en) * 1994-01-19 1995-05-09 Baxter; Ronald D. ESD Protection of ISFET sensors
US6021172A (en) 1994-01-28 2000-02-01 California Institute Of Technology Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter
JP3351088B2 (ja) 1994-03-28 2002-11-25 松下電工株式会社 電源装置
DE4430811C1 (de) 1994-08-30 1995-09-07 Fraunhofer Ges Forschung Verfahren zum Herstellen eines integrierten ionensensitiven Feldeffekttransistors in CMOS-Silizium-Planartechnologie
US6654505B2 (en) 1994-10-13 2003-11-25 Lynx Therapeutics, Inc. System and apparatus for sequential processing of analytes
US5631704A (en) 1994-10-14 1997-05-20 Lucent Technologies, Inc. Active pixel sensor and imaging system having differential mode
US5490971A (en) 1994-10-25 1996-02-13 Sippican, Inc. Chemical detector
US5585069A (en) 1994-11-10 1996-12-17 David Sarnoff Research Center, Inc. Partitioned microelectronic and fluidic device array for clinical diagnostics and chemical synthesis
US5538909A (en) * 1995-01-19 1996-07-23 United Microelectronics Corporation Method of making a shallow trench large-angle-tilt implanted drain device
DE19512117A1 (de) 1995-04-04 1996-10-10 Itt Ind Gmbh Deutsche Meßeinrichtung
US5932450A (en) 1995-06-07 1999-08-03 Gen-Probe Incorporated Enzymatic synthesis of oligonucleotides using digestible templates
US5856174A (en) 1995-06-29 1999-01-05 Affymetrix, Inc. Integrated nucleic acid diagnostic device
FR2736205B1 (fr) 1995-06-30 1997-09-19 Motorola Semiconducteurs Dispositif detecteur a semiconducteur et son procede de formation
US5646558A (en) 1995-09-27 1997-07-08 Intel Corporation Plurality of distinct multiplexers that operate as a single multiplexer
US5702964A (en) 1995-10-17 1997-12-30 Lg Semicon, Co., Ltd. Method for forming a semiconductor device having a floating gate
US6825047B1 (en) 1996-04-03 2004-11-30 Applera Corporation Device and method for multiple analyte detection
EP1007966A4 (en) 1996-08-21 2001-10-17 Smithkline Beecham Corp QUICK PROCESS FOR LAYING BALL-BASED COMBINATORIAL BANKS
JPH1078827A (ja) 1996-09-02 1998-03-24 Yokogawa Electric Corp Ｉｃのスタート回路
GB9620209D0 (en) 1996-09-27 1996-11-13 Cemu Bioteknik Ab Method of sequencing DNA
US5894284A (en) 1996-12-02 1999-04-13 Motorola, Inc. Common-mode output sensing circuit
US5958703A (en) 1996-12-03 1999-09-28 Glaxo Group Limited Use of modified tethers in screening compound libraries
WO1998026277A2 (en) 1996-12-12 1998-06-18 Prolume, Ltd. Apparatus and method for detecting and identifying infectious agents
DE19653439A1 (de) 1996-12-20 1998-07-02 Svante Dr Paeaebo Verfahren zur direkten, exponentiellen Amplifikation und Sequenzierung von DNA Molekülen und dessen Anwendung
US6605428B2 (en) 1996-12-20 2003-08-12 Roche Diagnostics Gmbh Method for the direct, exponential amplification and sequencing of DNA molecules and its application
US20030215857A1 (en) 1996-12-20 2003-11-20 Roche Diagnostics Gmbh Method for the direct, exponential amplification and sequencing of DNA molecules and its application
US5912560A (en) 1997-02-25 1999-06-15 Waferscale Integration Inc. Charge pump circuit for voltage boosting in integrated semiconductor circuits
US5793230A (en) 1997-02-26 1998-08-11 Sandia Corporation Sensor readout detector circuit
US6197557B1 (en) 1997-03-05 2001-03-06 The Regents Of The University Of Michigan Compositions and methods for analysis of nucleic acids
US6327410B1 (en) 1997-03-14 2001-12-04 The Trustees Of Tufts College Target analyte sensors utilizing Microspheres
US7622294B2 (en) 1997-03-14 2009-11-24 Trustees Of Tufts College Methods for detecting target analytes and enzymatic reactions
US6391622B1 (en) 1997-04-04 2002-05-21 Caliper Technologies Corp. Closed-loop biochemical analyzers
US6872527B2 (en) 1997-04-16 2005-03-29 Xtrana, Inc. Nucleic acid archiving
US5944970A (en) 1997-04-29 1999-08-31 Honeywell Inc. Solid state electrochemical sensors
US5911873A (en) 1997-05-02 1999-06-15 Rosemount Analytical Inc. Apparatus and method for operating an ISFET at multiple drain currents and gate-source voltages allowing for diagnostics and control of isopotential points
US7220550B2 (en) 1997-05-14 2007-05-22 Keensense, Inc. Molecular wire injection sensors
US6969488B2 (en) 1998-05-22 2005-11-29 Solexa, Inc. System and apparatus for sequential processing of analytes
CA2291180A1 (en) 1997-05-23 1998-11-26 Lynx Therapeutics, Inc. System and apparatus for sequential processing of analytes
JP4231560B2 (ja) 1997-05-29 2009-03-04 株式会社堀場製作所 化学量の分布の電気化学的測定方法および装置
US6002299A (en) 1997-06-10 1999-12-14 Cirrus Logic, Inc. High-order multipath operational amplifier with dynamic offset reduction, controlled saturation current limiting, and current feedback for enhanced conditional stability
FR2764702B1 (fr) 1997-06-11 1999-09-03 Lyon Ecole Centrale Procede d'identification et/ou de dosage de substances biologiques, presentes dans un liquide conducteur, dispositif et capteur d'affinite utiles pour la mise en oeuvre de ce procede
US5923421A (en) 1997-07-24 1999-07-13 Lockheed Martin Energy Research Corporation Chemical detection using calorimetric spectroscopy
US6465178B2 (en) 1997-09-30 2002-10-15 Surmodics, Inc. Target molecule attachment to surfaces
US6485944B1 (en) 1997-10-10 2002-11-26 President And Fellows Of Harvard College Replica amplification of nucleic acid arrays
US6511803B1 (en) 1997-10-10 2003-01-28 President And Fellows Of Harvard College Replica amplification of nucleic acid arrays
AU737174B2 (en) 1997-10-10 2001-08-09 President & Fellows Of Harvard College Replica amplification of nucleic acid arrays
KR100251528B1 (ko) 1997-10-22 2000-04-15 김덕중 복수개의 센스 소오스 패드를 구비한 센스 전계효과 트랜지스터
US6369737B1 (en) 1997-10-30 2002-04-09 The Board Of Trustees Of The Leland Stanford Junior University Method and apparatus for converting a low dynamic range analog signal to a large dynamic range floating-point digital representation
EP0928101A3 (en) 1997-12-31 2001-05-02 Texas Instruments Incorporated CMOS area array sensors
JP4183789B2 (ja) 1998-01-14 2008-11-19 株式会社堀場製作所 物理現象および／または化学現象の検出装置
US7090975B2 (en) 1998-03-13 2006-08-15 Promega Corporation Pyrophosphorolysis and incorporation of nucleotide method for nucleic acid detection
CA2325886C (en) 1998-04-09 2009-07-21 California Institute Of Technology Electronic techniques for analyte detection
CA2330673C (en) 1998-05-01 2009-05-26 Arizona Board Of Regents Method of determining the nucleotide sequence of oligonucleotides and dna molecules
US7875440B2 (en) 1998-05-01 2011-01-25 Arizona Board Of Regents Method of determining the nucleotide sequence of oligonucleotides and DNA molecules
US6780591B2 (en) 1998-05-01 2004-08-24 Arizona Board Of Regents Method of determining the nucleotide sequence of oligonucleotides and DNA molecules
ATE423314T1 (de) 1998-06-24 2009-03-15 Illumina Inc Dekodierung von matrixartig-angeordneten sensoren durch mikropartikel
US6195585B1 (en) 1998-06-26 2001-02-27 Advanced Bionics Corporation Remote monitoring of implantable cochlear stimulator
JP4137239B2 (ja) 1998-08-03 2008-08-20 株式会社堀場製作所 Ｉｓｆｅｔアレイ
US6191444B1 (en) 1998-09-03 2001-02-20 Micron Technology, Inc. Mini flash process and circuit
KR100324914B1 (ko) 1998-09-25 2002-02-28 니시무로 타이죠 기판의 검사방법
WO2000028337A2 (en) 1998-11-06 2000-05-18 Onguard Systems, Inc. Electronic circuit with a non-continuous discharge path
EP1055121A1 (en) 1998-12-11 2000-11-29 Symyx Technologies, Inc. Sensor array-based system and method for rapid materials characterization
US6232075B1 (en) 1998-12-14 2001-05-15 Li-Cor, Inc. Heterogeneous assay for pyrophosphate detection
DE19857953C2 (de) 1998-12-16 2001-02-15 Conducta Endress & Hauser Vorrichtung zum Messen der Konzentration von Ionen in einer Meßflüssigkeit
US6429027B1 (en) 1998-12-28 2002-08-06 Illumina, Inc. Composite arrays utilizing microspheres
US6361671B1 (en) 1999-01-11 2002-03-26 The Regents Of The University Of California Microfabricated capillary electrophoresis chip and method for simultaneously detecting multiple redox labels
GB9901475D0 (en) 1999-01-22 1999-03-17 Pyrosequencing Ab A method of DNA sequencing
US20020150909A1 (en) 1999-02-09 2002-10-17 Stuelpnagel John R. Automated information processing in randomly ordered arrays
WO2000051191A1 (en) 1999-02-22 2000-08-31 Yissum Research Development Company Of The Hebrew University Of Jerusalem A hybrid electrical device with biological components
ATE556149T1 (de) 1999-02-23 2012-05-15 Caliper Life Sciences Inc Manipulation von mikropartikeln in mikrofluidischen systemen
US20030108867A1 (en) 1999-04-20 2003-06-12 Chee Mark S Nucleic acid sequencing using microsphere arrays
US20050191698A1 (en) 1999-04-20 2005-09-01 Illumina, Inc. Nucleic acid sequencing using microsphere arrays
US6355431B1 (en) 1999-04-20 2002-03-12 Illumina, Inc. Detection of nucleic acid amplification reactions using bead arrays
US7097973B1 (en) 1999-06-14 2006-08-29 Alpha Mos Method for monitoring molecular species within a medium
US6818395B1 (en) 1999-06-28 2004-11-16 California Institute Of Technology Methods and apparatus for analyzing polynucleotide sequences
AU1429701A (en) 1999-07-16 2001-02-05 Board Of Regents, The University Of Texas System General signaling protocols for chemical receptors in immobilized matrices
US6459398B1 (en) 1999-07-20 2002-10-01 D.S.P.C. Technologies Ltd. Pulse modulated digital to analog converter (DAC)
US6977145B2 (en) 1999-07-28 2005-12-20 Serono Genetics Institute S.A. Method for carrying out a biochemical protocol in continuous flow in a microreactor
US6423536B1 (en) 1999-08-02 2002-07-23 Molecular Dynamics, Inc. Low volume chemical and biochemical reaction system
US7211390B2 (en) 1999-09-16 2007-05-01 454 Life Sciences Corporation Method of sequencing a nucleic acid
US6274320B1 (en) 1999-09-16 2001-08-14 Curagen Corporation Method of sequencing a nucleic acid
US7244559B2 (en) 1999-09-16 2007-07-17 454 Life Sciences Corporation Method of sequencing a nucleic acid
US6671341B1 (en) 1999-09-17 2003-12-30 Agere Systems, Inc. Glitch-free phase switching synthesizer
US7124221B1 (en) 1999-10-19 2006-10-17 Rambus Inc. Low latency multi-level communication interface
US6878255B1 (en) 1999-11-05 2005-04-12 Arrowhead Center, Inc. Microfluidic devices with thick-film electrochemical detection
GB9926956D0 (en) 1999-11-13 2000-01-12 Koninkl Philips Electronics Nv Amplifier
US6518024B2 (en) 1999-12-13 2003-02-11 Motorola, Inc. Electrochemical detection of single base extension
US20030148301A1 (en) 1999-12-10 2003-08-07 Toshiya Aono Method of detecting nucleotide polymorphism
WO2001042498A1 (fr) 1999-12-10 2001-06-14 Toyo Boseki Kabushiki Kaisha Procede de detection de polymorphisme nucleotidique
JP2001175340A (ja) 1999-12-14 2001-06-29 Matsushita Electric Ind Co Ltd 電位発生回路
US6372291B1 (en) 1999-12-23 2002-04-16 Applied Materials, Inc. In situ deposition and integration of silicon nitride in a high density plasma reactor
DE19963509A1 (de) 1999-12-28 2001-07-05 Merck Patent Gmbh Verfahren zur Herstellung hochreiner Schwefelsäure
EP1197001B1 (en) 2000-02-14 2004-11-24 Koninklijke Philips Electronics N.V. Current-to-voltage converter with controllable gain, and signal processing circuit comprising such converter
WO2001061044A1 (en) 2000-02-15 2001-08-23 Lynx Therapeutics, Inc. Data analysis and display system for ligation-based dna sequencing
EP1257668B1 (en) 2000-02-16 2008-10-29 Illumina, Inc. Parallel genotyping of multiple patient samples
US6649416B1 (en) 2000-02-18 2003-11-18 Trustees Of Tufts College Intelligent electro-optical sensor array and method for analyte detection
FR2805826B1 (fr) 2000-03-01 2002-09-20 Nucleica Nouvelles puces a adn
ATE499988T1 (de) 2000-03-02 2011-03-15 Microchips Inc Mikromechanische geräte und verfahren zur speicherung und zur selektiven exposition von chemikalien
JP3442338B2 (ja) 2000-03-17 2003-09-02 株式会社日立製作所 Ｄｎａ分析装置、ｄｎａ塩基配列決定装置、ｄｎａ塩基配列決定方法、および反応モジュール
JP3701241B2 (ja) 2000-03-30 2005-09-28 インフィネオン テクノロジーズ アクチエンゲゼルシャフト センサ配列のトランジスタの状態を検出するセンサ配列および方法
US20040002470A1 (en) 2000-04-13 2004-01-01 Tim Keith Novel human gene relating to respiratory diseases, obesity, and inflammatory bowel disease
US6413792B1 (en) 2000-04-24 2002-07-02 Eagle Research Development, Llc Ultra-fast nucleic acid sequencing device and a method for making and using the same
US7001792B2 (en) 2000-04-24 2006-02-21 Eagle Research & Development, Llc Ultra-fast nucleic acid sequencing device and a method for making and using the same
US8232582B2 (en) 2000-04-24 2012-07-31 Life Technologies Corporation Ultra-fast nucleic acid sequencing device and a method for making and using the same
WO2001081896A1 (en) 2000-04-24 2001-11-01 Eagle Research & Development, Llc An ultra-fast nucleic acid sequencing device and a method for making and using the same
US7682837B2 (en) 2000-05-05 2010-03-23 Board Of Trustees Of Leland Stanford Junior University Devices and methods to form a randomly ordered array of magnetic beads and uses thereof
US20020042388A1 (en) 2001-05-01 2002-04-11 Cooper Mark J. Lyophilizable and enhanced compacted nucleic acids
US20020168678A1 (en) 2000-06-07 2002-11-14 Li-Cor, Inc. Flowcell system for nucleic acid sequencing
US6482639B2 (en) 2000-06-23 2002-11-19 The United States Of America As Represented By The Secretary Of The Navy Microelectronic device and method for label-free detection and quantification of biological and chemical molecules
EP1975251A3 (en) 2000-07-07 2009-03-25 Visigen Biotechnologies, Inc. Real-time sequence determination
US6611037B1 (en) 2000-08-28 2003-08-26 Micron Technology, Inc. Multi-trench region for accumulation of photo-generated charge in a CMOS imager
US6593198B2 (en) * 2000-09-18 2003-07-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US6939451B2 (en) 2000-09-19 2005-09-06 Aclara Biosciences, Inc. Microfluidic chip having integrated electrodes
EP1330306A2 (en) 2000-10-10 2003-07-30 BioTrove, Inc. Apparatus for assay, synthesis and storage, and methods of manufacture, use, and manipulation thereof
US6537881B1 (en) 2000-10-16 2003-03-25 Advanced Micro Devices, Inc. Process for fabricating a non-volatile memory device
US6558626B1 (en) 2000-10-17 2003-05-06 Nomadics, Inc. Vapor sensing instrument for ultra trace chemical detection
AU2002241803A1 (en) 2000-10-20 2002-06-18 The Board Of Trustees Of The Leland Stanford Junior University Transient electrical signal based methods and devices for characterizing molecular interaction and/or motion in a sample
US6770472B2 (en) 2000-11-17 2004-08-03 The Board Of Trustees Of The Leland Stanford Junior University Direct DNA sequencing with a transcription protein and a nanometer scale electrometer
KR100991573B1 (ko) 2000-12-11 2010-11-04 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 나노센서
GB2370410A (en) 2000-12-22 2002-06-26 Seiko Epson Corp Thin film transistor sensor
DE10065013B4 (de) 2000-12-23 2009-12-24 Robert Bosch Gmbh Verfahren zum Herstellen eines mikromechanischen Bauelements
KR20020055785A (ko) 2000-12-29 2002-07-10 구본준, 론 위라하디락사 횡전계 방식의 액정표시장치
WO2002079514A1 (en) 2001-01-10 2002-10-10 The Trustees Of Boston College Dna-bridged carbon nanotube arrays
JP2002221510A (ja) 2001-01-26 2002-08-09 Japan Science & Technology Corp 蓄積型化学・物理現象検出装置
JP4809983B2 (ja) 2001-02-14 2011-11-09 明彦 谷岡 生体高分子とリガンドとの相互作用を検出する装置及びその方法
EP1236804A1 (en) 2001-03-02 2002-09-04 Boehringer Mannheim Gmbh A method for determination of a nucleic acid using a control
DE10111458B4 (de) 2001-03-09 2008-09-11 Siemens Ag Analyseeinrichtung
GB0105831D0 (en) 2001-03-09 2001-04-25 Toumaz Technology Ltd Method for dna sequencing utilising enzyme linked field effect transistors
US8114591B2 (en) 2001-03-09 2012-02-14 Dna Electronics Ltd. Sensing apparatus and method
CA2440754A1 (en) 2001-03-12 2002-09-19 Stephen Quake Methods and apparatus for analyzing polynucleotide sequences by asynchronous base extension
US7027932B2 (en) 2001-03-21 2006-04-11 Olympus Optical Co., Ltd. Biochemical examination method
JP2002272463A (ja) 2001-03-22 2002-09-24 Olympus Optical Co Ltd 一塩基多型の型を判定する方法
US20050058990A1 (en) 2001-03-24 2005-03-17 Antonio Guia Biochip devices for ion transport measurement, methods of manufacture, and methods of use
US20040146849A1 (en) 2002-01-24 2004-07-29 Mingxian Huang Biochips including ion transport detecting structures and methods of use
US6418968B1 (en) 2001-04-20 2002-07-16 Nanostream, Inc. Porous microfluidic valves
KR100455283B1 (ko) 2001-04-23 2004-11-08 삼성전자주식회사 물질 유로의 측벽에 형성된 ｍｏｓｆｅｔ으로 이루어진물질 검출용 칩, 이를 포함하는 물질 검출 장치, 이의제조 방법 및 물질 검출 장치를 이용한 물질 검출 방법
KR100442838B1 (ko) 2001-12-11 2004-08-02 삼성전자주식회사 프로브의 고정화 검출방법 및 상기 프로브와 표적시료의결합정도 검출방법
CN1325658C (zh) 2001-04-23 2007-07-11 三星电子株式会社 包含mosfet分子检测芯片和采用该芯片的分子检测装置以及使用该装置的分子检测方法
US6571189B2 (en) 2001-05-14 2003-05-27 Hewlett-Packard Company System and method for scanner calibration
US20040023253A1 (en) 2001-06-11 2004-02-05 Sandeep Kunwar Device structure for closely spaced electrodes
US20030096268A1 (en) 2001-07-06 2003-05-22 Michael Weiner Method for isolation of independent, parallel chemical micro-reactions using a porous filter
US7668697B2 (en) 2006-02-06 2010-02-23 Andrei Volkov Method for analyzing dynamic detectable events at the single molecule level
DE10133363A1 (de) 2001-07-10 2003-01-30 Infineon Technologies Ag Messzelle und Messfeld mit solchen Messzellen sowie Verwendung einer Messzelle und Verwendung eines Messfeldes
US7485443B2 (en) 2001-07-17 2009-02-03 Northwestern University Solid-phase reactions
JP2003032908A (ja) 2001-07-19 2003-01-31 Nisshinbo Ind Inc キャパシタ組電池、その制御方法、その制御装置及び自動車用蓄電システム
DK1412487T3 (da) 2001-07-30 2010-08-30 Meso Scale Technologies Llc Assayelektroder der har immobiliserede lipid/proteinlag og fremgangsmåder til at fremstille og anvende disse
US6490220B1 (en) 2001-08-13 2002-12-03 Micron Technology, Inc. Method for reliably shutting off oscillator pulses to a charge-pump
JP4623887B2 (ja) 2001-08-27 2011-02-02 オー・エイチ・ティー株式会社 検査装置用センサ及び検査装置
US6929944B2 (en) 2001-08-31 2005-08-16 Beckman Coulter, Inc. Analysis using a distributed sample
GB0121602D0 (en) 2001-09-06 2001-10-24 Randox Lab Ltd Molecular array
US20030054396A1 (en) 2001-09-07 2003-03-20 Weiner Michael P. Enzymatic light amplification
DE10151021A1 (de) 2001-10-16 2003-04-30 Infineon Technologies Ag Sensor-Anordnung
DE10151020A1 (de) 2001-10-16 2003-04-30 Infineon Technologies Ag Schaltkreis-Anordnung, Sensor-Array und Biosensor-Array
US6795117B2 (en) 2001-11-06 2004-09-21 Candela Microsystems, Inc. CMOS image sensor with noise cancellation
US20030124599A1 (en) 2001-11-14 2003-07-03 Shiping Chen Biochemical analysis system with combinatorial chemistry applications
WO2003042683A1 (en) 2001-11-16 2003-05-22 Bio-X Inc. Fet type sensor, ion density detecting method comprising this sensor, and base sequence detecting method
US20050170347A1 (en) 2001-12-19 2005-08-04 Yuji Miyahara Potentiometric dna microarray, process for producing the same and method of analyzing nucleic acid
US20050106587A1 (en) 2001-12-21 2005-05-19 Micronas Gmbh Method for determining of nucleic acid analytes
US6518146B1 (en) 2002-01-09 2003-02-11 Motorola, Inc. Semiconductor device structure and method for forming
FR2835058B1 (fr) 2002-01-21 2004-03-12 Centre Nat Rech Scient Procede de detection d'au moins un parametre caracteristique de molecules sondes fixees sur au moins une zone active d'un capteur
US7772383B2 (en) 2002-01-25 2010-08-10 The Trustees Of Princeton University Chemical PCR: Compositions for enhancing polynucleotide amplification reactions
KR100403637B1 (ko) 2002-01-26 2003-10-30 삼성전자주식회사 출력 일그러짐을 최소화하는 파워 앰프 클리핑 회로
US6614301B2 (en) 2002-01-31 2003-09-02 Intel Corporation Differential amplifier offset adjustment
US7276749B2 (en) 2002-02-05 2007-10-02 E-Phocus, Inc. Image sensor with microcrystalline germanium photodiode layer
US6926865B2 (en) 2002-02-11 2005-08-09 Matsushita Electric Industrial Co., Ltd. Method and apparatus for detecting DNA hybridization
JP2003258128A (ja) 2002-02-27 2003-09-12 Nec Electronics Corp 不揮発性半導体記憶装置およびその製造方法ならびにその動作方法
US6846881B2 (en) 2002-02-27 2005-01-25 Bio-Rad Laboratories, Inc. Preparation of defect-free polyacrylamide electrophoresis gels in plastic cassettes
US7223371B2 (en) 2002-03-14 2007-05-29 Micronics, Inc. Microfluidic channel network device
US6953958B2 (en) 2002-03-19 2005-10-11 Cornell Research Foundation, Inc. Electronic gain cell based charge sensor
JP2003279532A (ja) 2002-03-22 2003-10-02 Horiba Ltd 化学濃度センサおよび化学濃度センサの製造方法
JP2003322633A (ja) 2002-05-01 2003-11-14 Seiko Epson Corp センサセル、バイオセンサ及びこれらの製造方法
US7022287B2 (en) 2002-05-08 2006-04-04 Sandia National Laboratories Single particle electrochemical sensors and methods of utilization
US20030215791A1 (en) 2002-05-20 2003-11-20 Applied Spectral Imaging Ltd. Method of and system for multiplexed analysis by spectral imaging
US6828685B2 (en) 2002-06-14 2004-12-07 Hewlett-Packard Development Company, L.P. Memory device having a semiconducting polymer film
US6894930B2 (en) 2002-06-19 2005-05-17 Sandisk Corporation Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
US20040136866A1 (en) 2002-06-27 2004-07-15 Nanosys, Inc. Planar nanowire based sensor elements, devices, systems and methods for using and making same
JP4196602B2 (ja) * 2002-07-12 2008-12-17 信越半導体株式会社 エピタキシャル成長用シリコンウエーハ及びエピタキシャルウエーハ並びにその製造方法
US7092757B2 (en) 2002-07-12 2006-08-15 Cardiac Pacemakers, Inc. Minute ventilation sensor with dynamically adjusted excitation current
US6885827B2 (en) 2002-07-30 2005-04-26 Amplification Technologies, Inc. High sensitivity, high resolution detection of signals
EP1525470A2 (de) 2002-07-31 2005-04-27 Infineon Technologies AG Sensor-anordnung
US7192700B2 (en) 2002-12-20 2007-03-20 Orchid Cellmark Inc. Methods and compositions for conducting primer extension and polymorphism detection reactions
US7842377B2 (en) 2003-08-08 2010-11-30 Boston Scientific Scimed, Inc. Porous polymeric particle comprising polyvinyl alcohol and having interior to surface porosity-gradient
CN100392097C (zh) 2002-08-12 2008-06-04 株式会社日立高新技术 使用dna微阵列的核酸检测方法以及核酸检测装置
US7267751B2 (en) 2002-08-20 2007-09-11 Nanogen, Inc. Programmable multiplexed active biologic array
GB0219541D0 (en) 2002-08-22 2002-10-02 Secr Defence Method and apparatus for stand-off chemical detection
JP4092990B2 (ja) 2002-09-06 2008-05-28 株式会社日立製作所 生体および化学試料検査装置
US8449824B2 (en) 2002-09-09 2013-05-28 Yizhong Sun Sensor instrument system including method for detecting analytes in fluids
US7595883B1 (en) 2002-09-16 2009-09-29 The Board Of Trustees Of The Leland Stanford Junior University Biological analysis arrangement and approach therefor
SE0202867D0 (sv) 2002-09-27 2002-09-27 Pyrosequencing Ab New sequencing method
CN1500887A (zh) 2002-10-01 2004-06-02 松下电器产业株式会社 引物伸长反应检测方法、碱基种类判别方法及其装置
WO2004034025A2 (en) 2002-10-10 2004-04-22 Nanosys, Inc. Nano-chem-fet based biosensors
DE10247889A1 (de) 2002-10-14 2004-04-22 Infineon Technologies Ag Sensor-Anordnung und Verfahren zum Betreiben einer Sensor-Anordnung
US20040079636A1 (en) 2002-10-25 2004-04-29 Chin Hsia Biomedical ion sensitive semiconductor sensor and sensor array
AU2003285092A1 (en) 2002-10-29 2004-05-25 Cornell Research Foundation, Inc. Chemical-sensitive floating gate field effect transistor
US6700814B1 (en) 2002-10-30 2004-03-02 Motorola, Inc. Sense amplifier bias circuit for a memory having at least two distinct resistance states
US7052821B2 (en) 2002-11-01 2006-05-30 Georgia Tech Research Corporation Sacrificial compositions, methods of use thereof, and methods of decomposition thereof
DE10251757B4 (de) 2002-11-05 2006-03-09 Micronas Holding Gmbh Vorrichtung zur Bestimmung der Konzentration von in einer zu untersuchenden Probe enthaltenen Liganden
US7122384B2 (en) 2002-11-06 2006-10-17 E. I. Du Pont De Nemours And Company Resonant light scattering microparticle methods
US7022288B1 (en) 2002-11-13 2006-04-04 The United States Of America As Represented By The Secretary Of The Navy Chemical detection sensor system
US20040130377A1 (en) 2002-11-26 2004-07-08 Akira Takeda Switched capacitor amplifier circuit and electronic device
DE10255755B4 (de) 2002-11-28 2006-07-13 Schneider, Christian, Dr. Integrierte elektronische Schaltung mit Feldeffekt-Sensoren zum Nachweis von Biomolekülen
WO2004051231A1 (ja) 2002-11-29 2004-06-17 Nec Corporation 分離装置および分離方法
US7163659B2 (en) 2002-12-03 2007-01-16 Hewlett-Packard Development Company, L.P. Free-standing nanowire sensor and method for detecting an analyte in a fluid
WO2004052540A2 (en) 2002-12-05 2004-06-24 Protasis Corporation Configurable microfluidic substrate assembly
US20040197803A1 (en) 2002-12-06 2004-10-07 Hidenobu Yaku Method, primer and kit for determining base type
US7575865B2 (en) 2003-01-29 2009-08-18 454 Life Sciences Corporation Methods of amplifying and sequencing nucleic acids
ES2338654T5 (es) 2003-01-29 2017-12-11 454 Life Sciences Corporation Amplificación de ácidos nucleicos en emulsión de perlas
US20050006234A1 (en) 2003-02-13 2005-01-13 Arjang Hassibi Semiconductor electrochemical bio-sensor array
US7317484B2 (en) 2003-02-26 2008-01-08 Digital Imaging Systems Gmbh CMOS APS readout scheme that combines reset drain current and the source follower output
US20070262363A1 (en) 2003-02-28 2007-11-15 Board Of Regents, University Of Texas System Low temperature fabrication of discrete silicon-containing substrates and devices
JP4586329B2 (ja) 2003-03-10 2010-11-24 カシオ計算機株式会社 Ｄｎａ分析装置及び分析方法
EP1606416A2 (en) 2003-03-10 2005-12-21 Casio Computer Co., Ltd. Dna analyzing apparatus, dna sensor, and analyzing method
TW586228B (en) 2003-03-19 2004-05-01 Univ Chung Yuan Christian Method for fabricating a titanium nitride sensing membrane on an EGFET
TWI235236B (en) 2003-05-09 2005-07-01 Univ Chung Yuan Christian Ion-sensitive circuit
JP2004343441A (ja) 2003-05-15 2004-12-02 Denso Corp 受光回路および距離計測装置
JP3760411B2 (ja) 2003-05-21 2006-03-29 インターナショナル・ビジネス・マシーンズ・コーポレーション アクティブマトリックスパネルの検査装置、検査方法、およびアクティブマトリックスｏｌｅｄパネルの製造方法
US7291496B2 (en) 2003-05-22 2007-11-06 University Of Hawaii Ultrasensitive biochemical sensor
EP1634075B1 (en) 2003-06-10 2015-01-14 Yissum Research Development Company Of The Hebrew University Of Jerusalem Electronic device for communication with living cells
US7250115B2 (en) 2003-06-12 2007-07-31 Agilent Technologies, Inc Nanopore with resonant tunneling electrodes
US6795006B1 (en) 2003-07-18 2004-09-21 Zarlink Semiconductor Ab Integrator reset mechanism
WO2005015156A2 (en) 2003-08-04 2005-02-17 Idaho Research Foundation, Inc. Molecular detector
JP2005077210A (ja) 2003-08-29 2005-03-24 National Institute For Materials Science 生体分子検出素子及びそれを用いた核酸解析方法
TWI223062B (en) 2003-09-03 2004-11-01 Univ Chung Yuan Christian Manufacture of an array pH sensor and device of its readout circuit
EP1685380A2 (en) 2003-09-18 2006-08-02 Parallele Bioscience, Inc. System and methods for enhancing signal-to-noise ratios of microarray-based measurements
GB0322010D0 (en) 2003-09-19 2003-10-22 Univ Cambridge Tech Detection of molecular interactions using field effect transistors
JP2005124126A (ja) 2003-09-24 2005-05-12 Seiko Epson Corp インピーダンス回路網、これを用いたフィルタ回路、増幅回路、半導体集積回路、電子機器及び無線通信装置
US7008550B2 (en) 2003-09-25 2006-03-07 Hitachi Global Storage Technologies Netherlands B.V. Method for forming a read transducer by ion milling and chemical mechanical polishing to eliminate nonuniformity near the MR sensor
GB0323224D0 (en) 2003-10-03 2003-11-05 Rolls Royce Plc A module for a fuel cell stack
US20070087401A1 (en) 2003-10-17 2007-04-19 Andy Neilson Analysis of metabolic activity in cells using extracellular flux rate measurements
WO2005043160A2 (en) 2003-10-31 2005-05-12 University Of Hawaii Ultrasensitive biochemical sensing platform
US7067886B2 (en) 2003-11-04 2006-06-27 International Business Machines Corporation Method of assessing potential for charging damage in SOI designs and structures for eliminating potential for damage
US7981362B2 (en) 2003-11-04 2011-07-19 Meso Scale Technologies, Llc Modular assay plates, reader systems and methods for test measurements
DE10352917A1 (de) 2003-11-11 2005-06-16 Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG Sensoranordnung mit mehreren potentiometrischen Sensoren
US7169560B2 (en) 2003-11-12 2007-01-30 Helicos Biosciences Corporation Short cycle methods for sequencing polynucleotides
US7279588B2 (en) 2003-12-02 2007-10-09 Seoul National University Foundation Dinuclear metal complex and pyrophosphate assay using the same
EP1697749B1 (en) 2003-12-22 2013-04-17 Imec The use of microelectronic structures for patterned deposition of molecules onto surfaces
US20050136414A1 (en) 2003-12-23 2005-06-23 Kevin Gunderson Methods and compositions for making locus-specific arrays
US6998666B2 (en) 2004-01-09 2006-02-14 International Business Machines Corporation Nitrided STI liner oxide for reduced corner device impact on vertical device performance
US7462512B2 (en) * 2004-01-12 2008-12-09 Polytechnic University Floating gate field effect transistors for chemical and/or biological sensing
JP4065855B2 (ja) 2004-01-21 2008-03-26 株式会社日立製作所 生体および化学試料検査装置
CA2538232A1 (en) 2004-01-21 2005-08-11 Rosemount Analytical Inc. Ion sensitive field effect transistor (isfet) sensor with improved gate configuration
US7927797B2 (en) 2004-01-28 2011-04-19 454 Life Sciences Corporation Nucleic acid amplification with continuous flow emulsion
JP3903183B2 (ja) 2004-02-03 2007-04-11 独立行政法人物質・材料研究機構 遺伝子検出電界効果デバイスおよびこれを用いた遺伝子多型解析方法
US7129883B2 (en) 2004-02-23 2006-10-31 Sony Corporation Method and apparatus for AD conversion, semiconductor device for detecting distribution of physical quantity, and electronic apparatus
JP2005242001A (ja) 2004-02-26 2005-09-08 Agilent Technol Inc Ｔｆｔアレイ試験方法
WO2005082098A2 (en) 2004-02-27 2005-09-09 President And Fellows Of Harvard College Polony fluorescent in situ sequencing beads
US20060057604A1 (en) 2004-03-15 2006-03-16 Thinkfar Nanotechnology Corporation Method for electrically detecting oligo-nucleotides with nano-particles
JP4127679B2 (ja) 2004-03-18 2008-07-30 株式会社東芝 核酸検出カセット及び核酸検出装置
DE102004014537A1 (de) 2004-03-23 2005-10-13 Fujitsu Ltd., Kawasaki Chipintegrierter Detektor zum Analysieren von Flüssigkeiten
WO2005090961A1 (ja) 2004-03-24 2005-09-29 Japan Science And Technology Agency 生体分子に関する形態及び情報をis−fetを利用して検出する測定法およびシステム
US20050221473A1 (en) 2004-03-30 2005-10-06 Intel Corporation Sensor array integrated circuits
US8138496B2 (en) 2004-04-01 2012-03-20 Nanyang Technological University Addressable transistor chip for conducting assays
US7117605B2 (en) 2004-04-13 2006-10-10 Gyrodata, Incorporated System and method for using microgyros to measure the orientation of a survey tool within a borehole
US7544979B2 (en) 2004-04-16 2009-06-09 Technion Research & Development Foundation Ltd. Ion concentration transistor and dual-mode sensors
US7462452B2 (en) 2004-04-30 2008-12-09 Pacific Biosciences Of California, Inc. Field-switch sequencing
TWI261801B (en) 2004-05-24 2006-09-11 Rohm Co Ltd Organic EL drive circuit and organic EL display device using the same organic EL drive circuit
ITTO20040386A1 (it) 2004-06-09 2004-09-09 Infm Istituto Naz Per La Fisi Dispositivo ad effetto di campo per la rilevazione di piccole quantita' di carica elettrica, come quelle generate in processi biomolecolari, immobilizzate nelle vicinanze della superficie.
US7264934B2 (en) 2004-06-10 2007-09-04 Ge Healthcare Bio-Sciences Corp. Rapid parallel nucleic acid analysis
US7361946B2 (en) 2004-06-28 2008-04-22 Nitronex Corporation Semiconductor device-based sensors
US20060024711A1 (en) 2004-07-02 2006-02-02 Helicos Biosciences Corporation Methods for nucleic acid amplification and sequence determination
GB2416210B (en) 2004-07-13 2008-02-20 Christofer Toumazou Ion sensitive field effect transistors
JP3874772B2 (ja) 2004-07-21 2007-01-31 株式会社日立製作所 生体関連物質測定装置及び測定方法
JP4455215B2 (ja) 2004-08-06 2010-04-21 キヤノン株式会社 撮像装置
US7276453B2 (en) 2004-08-10 2007-10-02 E.I. Du Pont De Nemours And Company Methods for forming an undercut region and electronic devices incorporating the same
TWI258173B (en) 2004-10-08 2006-07-11 Ind Tech Res Inst Polysilicon thin-film ion sensitive FET device and fabrication method thereof
US7190026B2 (en) * 2004-08-23 2007-03-13 Enpirion, Inc. Integrated circuit employable with a power converter
US7888013B2 (en) 2004-08-27 2011-02-15 National Institute For Materials Science Method of analyzing DNA sequence using field-effect device, and base sequence analyzer
US20070212681A1 (en) 2004-08-30 2007-09-13 Benjamin Shapiro Cell canaries for biochemical pathogen detection
US20080063566A1 (en) 2004-09-03 2008-03-13 Mitsubishi Chemical Corporation Sensor Unit and Reaction Field Cell Unit and Analyzer
DE102004044299A1 (de) 2004-09-10 2006-03-30 Forschungszentrum Jülich GmbH Vorrichtung und Verfahren zum Nachweis von geladenen Makromolekülen
US7609303B1 (en) 2004-10-12 2009-10-27 Melexis Tessenderlo Nv Low noise active pixel image sensor using a modified reset value
JP2006138846A (ja) 2004-10-14 2006-06-01 Toshiba Corp 核酸検出センサ、核酸検出チップ及び核酸検出装置
US7534097B2 (en) 2004-10-15 2009-05-19 Nanyang Technological University Method and apparatus for controlling multi-fluid flow in a micro channel
US7381936B2 (en) 2004-10-29 2008-06-03 Ess Technology, Inc. Self-calibrating anti-blooming circuit for CMOS image sensor having a spillover protection performance in response to a spillover condition
US8340914B2 (en) 2004-11-08 2012-12-25 Gatewood Joe M Methods and systems for compressing and comparing genomic data
US7785785B2 (en) 2004-11-12 2010-08-31 The Board Of Trustees Of The Leland Stanford Junior University Charge perturbation detection system for DNA and other molecules
CA2588095A1 (en) 2004-11-18 2006-08-17 Morgan Research Corporation Miniature fourier transform spectrophotometer
US20060205061A1 (en) 2004-11-24 2006-09-14 California Institute Of Technology Biosensors based upon actuated desorption
WO2006056226A1 (de) 2004-11-26 2006-06-01 Micronas Gmbh Elektrisches bauelement
JP4678676B2 (ja) 2004-12-10 2011-04-27 株式会社堀場製作所 物理現象または化学現象の測定方法または測定装置
US7499513B1 (en) 2004-12-23 2009-03-03 Xilinx, Inc. Method and apparatus for providing frequency synthesis and phase alignment in an integrated circuit
KR100623177B1 (ko) 2005-01-25 2006-09-13 삼성전자주식회사 높은 유전율을 갖는 유전체 구조물, 이의 제조 방법, 이를포함하는 불휘발성 반도체 메모리 장치 및 그 제조 방법
CA2593855A1 (en) 2005-01-31 2006-08-10 Pacific Biosciences Of California, Inc. Use of reversible extension terminator in nucleic acid sequencing
US20060199493A1 (en) 2005-02-04 2006-09-07 Hartmann Richard Jr Vent assembly
US20060182664A1 (en) 2005-02-14 2006-08-17 Peck Bill J Flow cell devices, systems and methods of using the same
US9040237B2 (en) 2005-03-04 2015-05-26 Intel Corporation Sensor arrays and nucleic acid sequencing applications
US7826980B2 (en) 2005-03-11 2010-11-02 National University Corporation Toyohashi University Of Technology Cumulative chemical/physical phenomenon detecting apparatus
JP2006284225A (ja) 2005-03-31 2006-10-19 Horiba Ltd ポテンシャルの測定方法および測定装置
EP1866055A4 (en) 2005-04-05 2010-08-18 Protein Discovery Inc IMPROVED METHOD AND DEVICE FOR CONCENTRATING AND FRACTIONATING ANALYTES FOR CHEMICAL ANALYZES WITH MATRIX BASED LASER DESORPTION / IONIZATION MASS SPECTROMETRY (MALDI-MS)
US20060228721A1 (en) 2005-04-12 2006-10-12 Leamon John H Methods for determining sequence variants using ultra-deep sequencing
TWI287041B (en) 2005-04-27 2007-09-21 Jung-Tang Huang An ultra-rapid DNA sequencing method with nano-transistors array based devices
GB0509275D0 (en) 2005-05-06 2005-06-15 Univ Cranfield Synthetic receptor
US20060269927A1 (en) 2005-05-25 2006-11-30 Lieber Charles M Nanoscale sensors
DE102005027245A1 (de) 2005-06-13 2006-12-21 Siemens Ag Schaltkreisanordnung
CN1881457A (zh) 2005-06-14 2006-12-20 松下电器产业株式会社 致动器控制方法和使用该方法的盘装置
JP5331476B2 (ja) 2005-06-15 2013-10-30 カリダ・ジェノミックス・インコーポレイテッド 遺伝子解析および化学解析用の単分子アレイ
WO2007002204A2 (en) 2005-06-21 2007-01-04 The Trustees Of Columbia University In The City Of New York Pyrosequencing methods and related compostions
TW200701588A (en) 2005-06-29 2007-01-01 Leadtrend Tech Corp Dual loop voltage regulation circuit of power supply chip
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
JP2007035726A (ja) 2005-07-22 2007-02-08 Rohm Co Ltd 半導体装置、モジュールおよび電子機器
JP2009505045A (ja) 2005-08-08 2009-02-05 ミクロガン ゲーエムベーハー 半導体センサ
US7365597B2 (en) 2005-08-19 2008-04-29 Micron Technology, Inc. Switched capacitor amplifier with higher gain and improved closed-loop gain accuracy
SG130066A1 (en) 2005-08-26 2007-03-20 Micron Technology Inc Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices
JP4353958B2 (ja) 2005-09-15 2009-10-28 株式会社日立製作所 Ｄｎａ計測装置、及びｄｎａ計測方法
ATE548112T1 (de) 2005-09-29 2012-03-15 Siemens Medical Solutions Mikrofluidikchip, der zur synthese von radioaktiv markierten molekülen in einem für die bilderzeugung am menschen mittels positronenemissionstopographie geeigneten massstab befähigt ist
US7466258B1 (en) 2005-10-07 2008-12-16 Cornell Research Foundation, Inc. Asynchronous analog-to-digital converter and method
US7794584B2 (en) 2005-10-12 2010-09-14 The Research Foundation Of State University Of New York pH-change sensor and method
US20070096164A1 (en) 2005-10-31 2007-05-03 Peters Kevin F Sensing system
US7335526B2 (en) 2005-10-31 2008-02-26 Hewlett-Packard Development Company, L.P. Sensing system
TWI295729B (en) 2005-11-01 2008-04-11 Univ Nat Yunlin Sci & Tech Preparation of a ph sensor, the prepared ph sensor, systems comprising the same, and measurement using the systems
US7239188B1 (en) 2005-11-01 2007-07-03 Integrated Device Technology, Inc. Locked-loop integrated circuits having speed tracking circuits therein
WO2007059605A1 (en) 2005-11-04 2007-05-31 Bio Syntech Canada Inc. Composition and method for efficient delivery of nucleic acids to cells using chitosan
US7538827B2 (en) 2005-11-17 2009-05-26 Chunghwa Picture Tubes, Ltd. Pixel structure
US7576037B2 (en) 2005-11-18 2009-08-18 Mei Technologies, Inc. Process and apparatus for combinatorial synthesis
US20080178692A1 (en) 2007-01-29 2008-07-31 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Fluidic methods
US7566913B2 (en) 2005-12-02 2009-07-28 Nitronex Corporation Gallium nitride material devices including conductive regions and methods associated with the same
GB2436619B (en) 2005-12-19 2010-10-06 Toumaz Technology Ltd Sensor circuits
KR100718144B1 (ko) 2006-01-09 2007-05-14 삼성전자주식회사 이온 물질 검출용 ｆｅｔ 기반 센서, 그를 포함하는 이온물질 검출 장치 및 그를 이용한 이온 물질 검출 방법
US7815868B1 (en) 2006-02-28 2010-10-19 Fluidigm Corporation Microfluidic reaction apparatus for high throughput screening
JP2007243003A (ja) * 2006-03-10 2007-09-20 Oki Electric Ind Co Ltd 半導体装置の製造方法
WO2007109228A1 (en) 2006-03-17 2007-09-27 The Government Of The United States Of America, As Represented By The Secretary, Department Of Health And Human Services Apparatus for microarray binding sensors having biological probe materials using carbon nanotube transistors
US20070233477A1 (en) 2006-03-30 2007-10-04 Infima Ltd. Lossless Data Compression Using Adaptive Context Modeling
US7923240B2 (en) 2006-03-31 2011-04-12 Intel Corporation Photo-activated field effect transistor for bioanalyte detection
WO2007123908A2 (en) 2006-04-18 2007-11-01 Advanced Liquid Logic, Inc. Droplet-based multiwell operations
KR100723426B1 (ko) 2006-04-26 2007-05-30 삼성전자주식회사 이온 물질 검출용 전계 효과 트랜지스터 및 그를 이용한이온 물질 검출 방법
US20080014589A1 (en) 2006-05-11 2008-01-17 Link Darren R Microfluidic devices and methods of use thereof
WO2007138937A1 (en) 2006-05-26 2007-12-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4211805B2 (ja) 2006-06-01 2009-01-21 エプソンイメージングデバイス株式会社 電気光学装置および電子機器
JP4404074B2 (ja) 2006-06-30 2010-01-27 ソニー株式会社 固体撮像装置及びデータ伝送方法並びに撮像装置
JP4883812B2 (ja) 2006-07-13 2012-02-22 国立大学法人名古屋大学 物質検出装置
KR100799577B1 (ko) 2006-08-31 2008-01-30 한국전자통신연구원 가스 및 생화학물질 감지용 센서 제조 방법과 그 센서를포함하는 집적회로 및 그 제조 방법
US7960776B2 (en) 2006-09-27 2011-06-14 Cornell Research Foundation, Inc. Transistor with floating gate and electret
US20080085219A1 (en) 2006-10-05 2008-04-10 Beebe David J Microfluidic platform and method
US8231831B2 (en) 2006-10-06 2012-07-31 Sharp Laboratories Of America, Inc. Micro-pixelated fluid-assay structure
US7682791B2 (en) 2006-10-29 2010-03-23 Macevicz Stephen C Method of generating nested sets of double stranded DNA circles
DE102006052863B4 (de) 2006-11-09 2018-03-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Schutzstruktur für Halbleitersensoren und deren Verwendung
US20080242560A1 (en) 2006-11-21 2008-10-02 Gunderson Kevin L Methods for generating amplified nucleic acid arrays
US20080136933A1 (en) 2006-12-11 2008-06-12 Digital Imaging Systems Gmbh Apparatus for controlling operation of a multiple photosensor pixel image sensor
US8262900B2 (en) 2006-12-14 2012-09-11 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US8349167B2 (en) 2006-12-14 2013-01-08 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
EP4134667A1 (en) 2006-12-14 2023-02-15 Life Technologies Corporation Apparatus for measuring analytes using fet arrays
US7972828B2 (en) 2006-12-19 2011-07-05 Sigma-Aldrich Co. Stabilized compositions of thermostable DNA polymerase and anionic or zwitterionic detergent
US7932034B2 (en) 2006-12-20 2011-04-26 The Board Of Trustees Of The Leland Stanford Junior University Heat and pH measurement for sequencing of DNA
US7486145B2 (en) 2007-01-10 2009-02-03 International Business Machines Corporation Circuits and methods for implementing sub-integer-N frequency dividers using phase rotators
WO2008089282A2 (en) 2007-01-16 2008-07-24 Silver James H Sensors for detecting subtances indicative of stroke, ischemia, infection or inflammation
JP4325684B2 (ja) 2007-02-20 2009-09-02 株式会社デンソー センサ制御装置、及び印加電圧特性の調整方法
US8031809B2 (en) 2007-02-28 2011-10-04 Seiko Epson Corporation Template pulse generating circuit, communication device, and communication method
JP5368321B2 (ja) 2007-03-02 2013-12-18 ディ・エヌ・エイ・エレクトロニクス・リミテッド 固相ｐＨ検出を用いたｑＰＣＲ
JP2008215974A (ja) 2007-03-02 2008-09-18 Citizen Holdings Co Ltd 電界効果トランジスタ型イオンセンサ
EP1975246A1 (de) 2007-03-29 2008-10-01 Micronas Holding GmbH Markierungsfreie Sequenzierung auf einer Festphase mittels Feldeffekttransistoren
AU2008276308A1 (en) 2007-07-13 2009-01-22 The Board Of Trustees Of The Leland Stanford Junior University Method and apparatus using electric field for improved biological assays
US20100176463A1 (en) 2007-07-19 2010-07-15 Renesas Technology Corp. Semiconductor device and manufacturing method of the same
WO2009014155A1 (en) 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
US7609093B2 (en) 2007-08-03 2009-10-27 Tower Semiconductor Ltd. Comparator with low supply current spike and input offset cancellation
US20090062132A1 (en) 2007-08-29 2009-03-05 Borner Scott R Alternative nucleic acid sequencing methods
WO2009041917A1 (en) 2007-09-28 2009-04-02 Agency For Science, Technology And Research Method of electrically detecting a nucleic acid molecule
US7936042B2 (en) 2007-11-13 2011-05-03 International Business Machines Corporation Field effect transistor containing a wide band gap semiconductor material in a drain
KR100940415B1 (ko) 2007-12-03 2010-02-02 주식회사 동부하이텍 배면 드레인 구조 웨이퍼의 온저항 측정방법
US8124936B1 (en) 2007-12-13 2012-02-28 The United States Of America As Represented By The Secretary Of The Army Stand-off chemical detector
CN101896624A (zh) 2007-12-13 2010-11-24 Nxp股份有限公司 对生物微粒进行测序的生物传感器装置和方法
WO2009081890A1 (ja) 2007-12-20 2009-07-02 National University Corporation Toyohashi University Of Technology 複合検出装置
US20090194416A1 (en) 2008-01-31 2009-08-06 Chung Yuan Christian University Potentiometric biosensor for detection of creatinine and forming method thereof
DE102008012899A1 (de) 2008-03-06 2009-09-10 Robert Bosch Gmbh Verfahren zum Betreiben eines Gassensors
US8067731B2 (en) 2008-03-08 2011-11-29 Scott Technologies, Inc. Chemical detection method and system
US7885490B2 (en) 2008-03-10 2011-02-08 Octrolix Bv Optical chemical detector and method
US7667501B2 (en) 2008-03-19 2010-02-23 Texas Instruments Incorporated Correlated double sampling technique
JP5259219B2 (ja) 2008-03-19 2013-08-07 株式会社三社電機製作所 電源装置
US20090273386A1 (en) 2008-05-01 2009-11-05 Custom One Design, Inc Apparatus for current-to-voltage integration for current-to-digital converter
TWI377342B (en) 2008-05-08 2012-11-21 Univ Nat Yunlin Sci & Tech Method for forming an extended gate field effect transistor (egfet) based sensor and the sensor formed thereby
US7821806B2 (en) 2008-06-18 2010-10-26 Nscore Inc. Nonvolatile semiconductor memory circuit utilizing a MIS transistor as a memory cell
US8470164B2 (en) 2008-06-25 2013-06-25 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
GB2461127B (en) 2008-06-25 2010-07-14 Ion Torrent Systems Inc Methods and apparatus for measuring analytes using large scale FET arrays
US7893718B2 (en) 2008-08-13 2011-02-22 Samsung Electronics Co., Ltd. High-speed multiplexer and semiconductor device including the same
JP5260193B2 (ja) 2008-09-03 2013-08-14 ルネサスエレクトロニクス株式会社 半導体集積回路及びそのスイッチングノイズ平準化方法
KR101026468B1 (ko) 2008-09-10 2011-04-01 한국전자통신연구원 생분자 검출 장치 및 검출 방법
CN101676714A (zh) 2008-09-16 2010-03-24 中研应用感测科技股份有限公司 整合式离子感测器
US8945912B2 (en) 2008-09-29 2015-02-03 The Board Of Trustees Of The University Of Illinois DNA sequencing and amplification systems using nanoscale field effect sensor arrays
US20100301398A1 (en) 2009-05-29 2010-12-02 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
JP2012506557A (ja) 2008-10-22 2012-03-15 ライフ テクノロジーズ コーポレーション 生物学的および化学的分析のための集積センサアレイ
US20100137143A1 (en) 2008-10-22 2010-06-03 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US8546128B2 (en) 2008-10-22 2013-10-01 Life Technologies Corporation Fluidics system for sequential delivery of reagents
US8248356B2 (en) 2008-10-24 2012-08-21 Au Optronics Corp. Driving circuit for detecting line short defects
US7898277B2 (en) 2008-12-24 2011-03-01 Agere Systems Inc. Hot-electronic injection testing of transistors on a wafer
US8101479B2 (en) * 2009-03-27 2012-01-24 National Semiconductor Corporation Fabrication of asymmetric field-effect transistors using L-shaped spacers
US9309557B2 (en) 2010-12-17 2016-04-12 Life Technologies Corporation Nucleic acid amplification
US9334531B2 (en) 2010-12-17 2016-05-10 Life Technologies Corporation Nucleic acid amplification
EP3663750B1 (en) 2009-05-29 2021-11-03 Life Technologies Corporation Scaffolded nucleic acid polymer particles and methods of making and using
US20120261274A1 (en) 2009-05-29 2012-10-18 Life Technologies Corporation Methods and apparatus for measuring analytes
US8776573B2 (en) 2009-05-29 2014-07-15 Life Technologies Corporation Methods and apparatus for measuring analytes
US8673627B2 (en) 2009-05-29 2014-03-18 Life Technologies Corporation Apparatus and methods for performing electrochemical reactions
US20110037121A1 (en) * 2009-08-16 2011-02-17 Tung-Hsing Lee Input/output electrostatic discharge device with reduced junction breakdown voltage
JP2011041205A (ja) 2009-08-18 2011-02-24 Panasonic Corp 電圧発生回路、デジタルアナログ変換器、ランプ波発生回路、アナログデジタル変換器、イメージセンサシステム及び電圧発生方法
SG188863A1 (en) 2009-09-11 2013-04-30 Agency Science Tech & Res Method of determining a sensitivity of a biosensor arrangement, and biosensor sensitivity determining system
US9018684B2 (en) 2009-11-23 2015-04-28 California Institute Of Technology Chemical sensing and/or measuring devices and methods
US8545248B2 (en) 2010-01-07 2013-10-01 Life Technologies Corporation System to control fluid flow based on a leak detected by a sensor
TWI422818B (zh) 2010-01-11 2014-01-11 Nat Chip Implementation Ct Nat Applied Res Lab 氫離子感測場效電晶體及其製造方法
US9088208B2 (en) 2010-01-27 2015-07-21 Intersil Americas LLC System and method for high precision current sensing
WO2011106634A2 (en) 2010-02-26 2011-09-01 Life Technologies Corporation Modified proteins and methods of making and using same
US8878257B2 (en) 2010-06-04 2014-11-04 Freescale Semiconductor, Inc. Methods and apparatus for an ISFET
CN109449171A (zh) 2010-06-30 2019-03-08 生命科技公司 用于检测和测量化学反应和化合物的晶体管电路
EP2588851B1 (en) 2010-06-30 2016-12-21 Life Technologies Corporation Ion-sensing charge-accumulation circuit and method
JP5952813B2 (ja) 2010-06-30 2016-07-13 ライフ テクノロジーズ コーポレーション Ｉｓｆｅｔアレイをテストする方法及び装置
WO2012006222A1 (en) 2010-07-03 2012-01-12 Life Technologies Corporation Chemically sensitive sensor with lightly doped drains
US8227877B2 (en) 2010-07-14 2012-07-24 Macronix International Co., Ltd. Semiconductor bio-sensors and methods of manufacturing the same
CN106198656B (zh) 2010-08-18 2018-12-11 生命科技股份有限公司 用于电化学检测装置的微孔的化学涂层
US8453494B2 (en) 2010-09-13 2013-06-04 National Semiconductor Corporation Gas detector that utilizes an electric field to assist in the collection and removal of gas molecules
EP2617061B1 (en) 2010-09-15 2021-06-30 Life Technologies Corporation Methods and apparatus for measuring analytes
EP2619564B1 (en) 2010-09-24 2016-03-16 Life Technologies Corporation Matched pair transistor circuits
GB201017023D0 (en) 2010-10-08 2010-11-24 Dna Electronics Ltd ISFET switch
JP5735268B2 (ja) 2010-12-20 2015-06-17 サムソン エレクトロ−メカニックス カンパニーリミテッド． 高周波半導体スイッチ
US10241075B2 (en) 2010-12-30 2019-03-26 Life Technologies Corporation Methods, systems, and computer readable media for nucleic acid sequencing
JP5613605B2 (ja) 2011-03-28 2014-10-29 ルネサスエレクトロニクス株式会社 クロック生成回路、それを用いたプロセッサシステム、及びクロック周波数制御方法
WO2012152308A1 (en) 2011-05-06 2012-11-15 X-Fab Semiconductor Foundries Ag Ion sensitive field effect transistor
US9518953B2 (en) 2011-09-07 2016-12-13 Technion Research And Development Foundation Ltd. Ion sensitive detector
US11008611B2 (en) 2011-09-30 2021-05-18 Unm Rainforest Innovations Double gate ion sensitive field effect transistor
US9459234B2 (en) 2011-10-31 2016-10-04 Taiwan Semiconductor Manufacturing Company, Ltd., (“TSMC”) CMOS compatible BioFET
US8547151B2 (en) 2011-11-30 2013-10-01 Taiwan Semiconductor Manufacturing Company, Ltd. Phase-locked loops that share a loop filter
US8747748B2 (en) 2012-01-19 2014-06-10 Life Technologies Corporation Chemical sensor with conductive cup-shaped sensor surface
US8821798B2 (en) 2012-01-19 2014-09-02 Life Technologies Corporation Titanium nitride as sensing layer for microwell structure
US8847637B1 (en) 2012-05-24 2014-09-30 Massachusetts Institute Of Technology Time-interleaved multi-modulus frequency divider
US8786331B2 (en) 2012-05-29 2014-07-22 Life Technologies Corporation System for reducing noise in a chemical sensor array
EP2677307B1 (en) 2012-06-21 2016-05-11 Nxp B.V. Integrated circuit with sensors and manufacturing method
US8728844B1 (en) 2012-12-05 2014-05-20 Taiwan Semiconductor Manufacturing Company, Ltd. Backside CMOS compatible bioFET with no plasma induced damage
US8962366B2 (en) 2013-01-28 2015-02-24 Life Technologies Corporation Self-aligned well structures for low-noise chemical sensors
US8841217B1 (en) 2013-03-13 2014-09-23 Life Technologies Corporation Chemical sensor with protruded sensor surface
US8963216B2 (en) 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
US9389199B2 (en) 2013-03-14 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Backside sensing bioFET with enhanced performance
US9228974B2 (en) 2013-04-10 2016-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Biosensing well array by self-alignment and selective etching
GB2513663B (en) 2013-05-03 2015-11-04 Dyson Technology Ltd Compressor
US20140367748A1 (en) 2013-06-14 2014-12-18 International Business Machines Corporation EXTENDED GATE SENSOR FOR pH SENSING
US9023674B2 (en) 2013-09-20 2015-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Biosensing well array with protective layer
US20150097214A1 (en) 2013-10-09 2015-04-09 Taiwan Semiconductor Manufacturing Company Limited Structures, apparatuses and methods for fabricating sensors in multi-layer structures
US9488615B2 (en) 2014-12-17 2016-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Biosensor with a sensing surface on an interlayer dielectric

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5151759A (en) * 1989-03-02 1992-09-29 Thunderbird Technologies, Inc. Fermi threshold silicon-on-insulator field effect transistor
US5439839A (en) * 1994-07-13 1995-08-08 Winbond Electronics Corporation Self-aligned source/drain MOS process

Also Published As

Publication number Publication date
US20120001235A1 (en) 2012-01-05
EP2589065A1 (en) 2013-05-08
JP2013533483A (ja) 2013-08-22
JP5876044B2 (ja) 2016-03-02
US8653567B2 (en) 2014-02-18
CN103168341A (zh) 2013-06-19
EP2589065B1 (en) 2015-08-19
TW201225304A (en) 2012-06-16
EP2589065A4 (en) 2013-08-14
US20190131422A1 (en) 2019-05-02
TWI527245B (zh) 2016-03-21
US9960253B2 (en) 2018-05-01
US20140193938A1 (en) 2014-07-10
WO2012006222A1 (en) 2012-01-12

Similar Documents

Publication Publication Date Title
CN103168341B (zh) 具有轻度掺杂的排出装置的化学敏感的传感器
US10481123B2 (en) Ion-sensing charge-accumulation circuits and methods
CN103080739B (zh) 用于测试isfet阵列的方法和装置
US8247849B2 (en) Two-transistor pixel array
US7884398B2 (en) Floating gate field effect transistors for chemical and/or biological sensing
US20210270770A1 (en) Field-effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20161005

Termination date: 20210630

CF01 Termination of patent right due to non-payment of annual fee