TWI527245B - 具有微摻雜汲極之化學感測器 - Google Patents

具有微摻雜汲極之化學感測器 Download PDF

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TWI527245B
TWI527245B TW100123234A TW100123234A TWI527245B TW I527245 B TWI527245 B TW I527245B TW 100123234 A TW100123234 A TW 100123234A TW 100123234 A TW100123234 A TW 100123234A TW I527245 B TWI527245 B TW I527245B
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基斯 費佛
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Description

具有微摻雜汲極之化學感測器
本申請案主張2010年7月3日申請之美國臨時申請案第61/361,403號的優先權，其內容係以全文引用方式併入本文中。
依據目前的研究發現，電子裝置及元件在化學及生物學(通常稱為生命科學)上可以有許多種應用，特別是應用於偵測及測量各種生化反應及檢驗，以及偵測及測量各種化合物，其中之一是熟知的離子感測場效電晶體(ion-sensitive field effect transistor,ISFET，或稱pHFET)，其通常被大專院校及研究單位使用於測量溶液中的氫離子濃度(即pH值)。
一般而言，離子感測場效電晶體是一種阻抗轉換裝置，其操作方式與金氧半場效電晶體(Metal Oxide Semiconductor Field Effect Transistor,MOSFET)相似，且其通常係用以選擇性測量溶液中的離子活性，例如可以將溶液中的氫離子視為分析物，有關於離子感測場效電晶體之操作的詳細理論可以參照博夫德發表的論文(Thirty years of ISFETOLOGY: what happened in the past 30 years and what may happen in the next 30 years,”P. Bergveld,Sens. Actuators,88(2003),pp. 1-20)，其係以全文納入本說明書之範圍。
另外，羅斯伯格等人在美國專利公開第2010/0301398號、第2010/0282617號及第2009/0026082號，亦揭露關於利用習知的互補式金氧半導體(Complementary Metal Oxide Semiconductor,CMOS)之製程來製造離子感測場效電晶體，其係以全文納入本說明書之範圍。除上述互補式金氧半導體之製程外，還可以使用雙載子金氧半導體(bipolar and CMOS,biCMOS)之製程，此製程會在一P型金氧半場效電晶體陣列的周圍形成雙載子結構。此外，當然可以應用其他科技，只要可以形成具有三端子裝置之感測元件即可，例如為鎵砷及奈米碳管技術，其中，被感測之離子可以導致一信號，以便控制三個端子其中之一。
以互補式金氧半導體為例，一種P型離子感測場效電晶體的製程可以於一P型矽基板上進行，其中，一N型井係形成於P型矽基板，以形成電晶體之基體，並且在N型井中形成高度P型(P+)摻雜區域S及D，以分別構成離子感測場效電晶體之源極與汲極，另外，在N型井中形成一高度N型(N+)摻雜區域B，以形成與N型井連接之導電基體(或基極)。然後，在源極、汲極與基極連接區域分別形成一氧化層，藉以形成一開口以便提供電性連接(經由電導體)至該些區域。另外，在氧化層上相對於N型井的位置係形成有一多晶矽閘極，其係介於源極與汲極之間，由於此氧化層係設置於多晶矽閘極與電晶體基體(如N型井)之間，所以其通常可以作為一閘極氧化層。
與金氧半場效電晶體的操作相似，離子感測場效電晶體的操作是基於由一金氧半導體電容所形成之電荷濃度調變(及通道傳導性)，此電容是由一多晶矽閘極、一閘極氧化層及介於源極與汲極之間的一井區域(如N型井)所構成；當施加一負電壓於閘極區域與源極區域之間時，可以消耗此區域中的電子以便在此區域與閘極氧化層之介面形成通道，以一N型井為例，所形成之通道為一P型通道，反之亦然。另外，在N型井中，所形成之P型通道係延伸於源極與汲極之間，因此當施加於閘極與源極之間的負電位差夠大時，可以吸引源極的電洞進入通道，藉以形成電流，此時，使得通道開始產生電流時的閘極與源極電位差係為電晶體之臨限電壓VTH(當閘極與源極電位差VGS的絕對值大於臨限電壓VTH時，電晶體會導電)，由於源極係作為通過通道之電荷載體(P型通道之電洞)的來源，所以被稱為源極，相同地，汲極係為電荷載體離開通道處。
依據羅斯伯格所述，離子感測場效電晶體可以具有一浮動閘極結構，其係利用連接多晶矽閘極與複數個金屬層而得，其中該等金屬層係設置於一個以上之設置在閘極氧化層之上的氧化層中；由於浮動閘極結構係與離子感測場效電晶體中的其他導體電性隔離，所以被稱為浮動閘極結構，另外，其係夾設於閘極氧化層與一鈍化保護層之間，其中，鈍化保護層係設置於浮動閘極之一金屬層(如上金屬層)上方。
另外，如羅斯伯格所揭露，離子感測場效電晶體之鈍化保護層可形成一離子感測膜，其係能夠提高裝置的離子靈敏度；若分析物與鈍化保護層接觸時，位於浮動閘極結構上方之一感測區域通常能夠改變離子感測場效電晶體之電性特性，因此可以調變通過離子感測場效電晶體之源極與汲極間之通道的電流，其中，分析物例如為分析物溶液中的離子，如一溶液中含有相關之分析物(含離子)，或一待測試溶液以測試是否存在相關之分析物。其中，鈍化保護層可包括任一種能夠對特定離子提高靈敏度之不同物質，例如鈍化保護層可包括氮化矽或氮氧化矽，或金屬氧化物如矽、鋁、或鉭氧化物，其通常能夠提高對分析物溶液中氫離子濃度(pH值)的靈敏度；相同地，若鈍化保護層中包括聚氯乙烯，其含有纈氨黴素，能夠提高對分析物溶液中鉀離子濃度的靈敏度。目前已知可以利用其他適當之物質來形成鈍化保護層，藉以提高對其他離子的靈敏度，如鈉離子、銀離子、鐵離子、溴離子、碘離子、鈣離子、及硝酸鹽離子等，當然，鈍化保護層以可以包含其他物質，如金屬氧化物、金屬氮化物、金屬氮氧化物等。針對分析物溶液與鈍化保護層之介面所產生的化學反應而言，在離子感測場效電晶體之鈍化保護層中所加入之物質的表面可以具有化學基團，其可以用來提供質子給分析物溶液或接受分析物溶液所提供之質子，其可以在與分析物溶液相鄰之鈍化保護層的表面上，於任意時間提供負電荷、正電荷、或中性位置。
以離子靈敏度而言，在鈍化保護層與分析物溶液之間的固體/液體介面上會產生一電位差(通常稱為表面電位)，其係能夠利用其化學反應提供感測離子濃度之功能，其通常包含氧化物表面基團受到在感測區域附近之分析物溶液中的離子所影響而產生解離。此表面電位可依序影響離子感測場效電晶體之臨限電壓，因此，離子感測場效電晶體之臨限電壓會依據位在感測區域附近之分析物溶液中的離子變化而變動；如羅斯伯格所述，由於離子感測場效電晶體之臨限電壓VTH對離子濃度敏感，所以其源極電壓VS可以提供一信號，其係直接反應位在離子感測場效電晶體之感測區域附近之分析物溶液中的離子濃度。
化學感測場效電晶體(chemFET)陣列，或特別是離子感測場效電晶體陣列，可以用來監控反應，例如為核酸(如DNA)定序反應，其係利用監控在反應過程中分析物的出現、生成或消耗而達成；一般而言，此陣列(包括大陣列之化學感測場效電晶體)可以在各種化學及/或生物學製程(如生化反應、細胞或組織培養或監控、神經活性、核酸定序等)中，偵測並測量各種分析物之靜態及/或動態數量或濃度(如氫離子、其他離子、非離子分子或化合物等)，其可以依據分析物的各種測量結果而得到有價值的資訊。上述之化學感測場效電晶體陣列可以藉由化學感測場效電晶體表面之電荷變化而應用於各種分析物之偵測方法及/或生化製程之監控方法，其中，化學感測場效電晶體(或離子感測場效電晶體)陣列之應用可包括偵測溶液中之分析物，及/或偵測附著於化學感測場效電晶體表面(如離子感測場效電晶體之鈍化保護層)之電荷變化。
有關於製造離子感測場效電晶體陣列之研究係如米爾古羅與庫敏所揭露之內容(“A large transistor-based sensor array chip for direct extracellular imaging,”M. J. Milgrew,M. O. Riehle,and D. R. S. Cumming,Sensors and Actuators,B: Chemical,111-112,(2005),pp. 347-353)及米爾古羅、哈蒙德與庫敏所揭露之內容(“The development of scalable sensor arrays using standard CMOS technology,”M. J. Milgrew,P. A. Hammond,and D. R. S. Cumming,Sensors and Actuators,B: Chemical,103,(2004),pp. 37-42)，其係以全文納入本說明書之範圍，其中，化學感測場效電晶體陣列或離子感測場效電晶體陣列之製造與在化學偵測之應用(包含DNA定序相關之離子監測)的敘述係如羅斯伯格所述，詳言之，羅斯伯格係揭露利用化學感測場效電晶體陣列(特別是離子感測場效電晶體陣列)來定序一核酸，其包括在一反應腔室中將已知的核甘酸與複數核酸混合後接觸或連接至化學感測場效電晶體，其中，核酸係在反應腔室中連成一串；然後測量化學感測場效電晶體之一信號，其中，測量此信號表示將已知的三磷核甘酸形成合成核酸時，所釋出之一個以上之氫離子。
利用已知的離子感測場效電晶體(ISFET)可以感測化學反應，以產生電子信號，但其強度極小，所以可能需要利用其他電路進行放大，以便提供信號增益，並有效地處理此信號，上述之其他電路會佔據半導體基板上的一定空間，但此空間係用於設置其他感應器元件，而非此放大電路。因此，需要提供一種具有改良增益之化學感測器，藉以避免使用額外之增益電路，有鑑於此，發明人係揭露下列實施例。
本發明之實施例揭露一種具改良增益之化學感測器，其包括一微孔洞、一浮動閘極端子、一汲極端子、一源極端子、以及形成於一基板中之一對摻雜區域，其中，微孔洞係接受於一化學反應中之一樣品，浮動閘極係電性耦接於基板上之一閘極電極，汲極端子連接與源極端子連接係為化學感測器上的電性端子，基板中之該對摻雜區域可分別包括一輕度摻雜區域及一重度摻雜區域，各輕度摻雜區域係延伸於基板之閘極電極的下方，且各重度摻雜區域係延伸以分別耦接於汲極端子與源極端子。
本發明之另一實施例揭露一種具改良增益之化學感測器，其包括一微孔洞、一浮動閘極端子、一汲極端子、一源極端子、一對電極、以及形成於一基板中之一對摻雜區域，其中，微孔洞係接受於一化學反應中之一樣品，浮動閘極係電性耦接於基板上之一閘極電極，汲極端子連接與源極端子連接係為化學感測器上的電性端子，該對電極係形成於基板上，且其係分別設置在閘極電極之兩側，該對摻雜區域其中之一可包括一輕度摻雜區域及一重度摻雜區域，而另一個摻雜區域其中之一僅包括一重度摻雜區，輕度摻雜區域係延伸於相對之電極的下方，且各重度摻雜區域係延伸以分別耦接於汲極端子或源極端子。
本發明之一實施例揭露一種建立一化學感測器之方法，其可以形成一具有一第一導電型態之摻雜的基板，利用與基板具有相同導電型態之摻雜形成一磊晶層，但其濃度係低於基板上的摻雜濃度，利用與第一導電型態之摻雜不同之一第二導電型態之摻雜，在磊晶層上形成一電極層，其中，電極層與基板上的摻雜濃度可以是相似的，利用遮罩及蝕刻電極層以得到閘極與電極，第一輕度摻雜區域係利用多向性離子植入技術而形成於某一電極附近，其中，形成第一輕度摻雜區域之摻雜的導電型態係與磊晶層之摻雜的導電型態相反，形成擴散節點，其係自對準於位於閘極旁的電極，該等擴散節點其中之一係鄰設於第一輕度摻雜區域，其摻雜之導電型態係與閘極、電極、及輕度摻雜區域相同，然後形成一浮動閘極電極、位於擴散區域上方之電極及電極之接觸部，其係利用交替形成之絕緣層、介電層、導電層、及金屬層而構成。
圖1A至1D為本發明一實施例之示意圖，其係建立一半導體基板，在本實施例中，如圖1A所示，化學感測器100係形成於一多晶矽基板110上，其具有半導體摻雜，在本實施例中，為P或(P+)型摻雜；如圖1B所示，可利用摻雜與P+型基板相同之導電型態(如P型)但濃度較低之摻雜，在P+型基板110上係形成一磊晶層(P型磊晶層)120，當然，亦可以使用其他摻雜，如N型摻雜。
接著，在欲形成電荷耦合感應器單元的區域，先預摻雜一摻雜濃度之摻雜區，其導電型態(如N+)係與前述之基板(P+)110與磊晶層120相反；在圖1C中，在P型磊晶層120與P+型基板110上建立一N+摻雜區130，其中，N+摻雜區130係位於電荷耦合化學感應器的區域內；然後，使用遮罩及蝕刻製程，在N+摻雜區130之預摻雜區域中形成化學感測器100之閘極133及電極134、136，如圖1D所示。需注意者，熟悉該項技術者應當瞭解，上述之摻雜區域係為可逆。
承上所述，依本發明實施例所製造之電晶體可以依據輸入至閘極電極133之信號，對電極134與136之間的任意信號提供一第一增益，此化學感測器100之增益可以藉由在基板100中鄰近於電極134、136或閘極133處，加入額外的摻雜物質而改變，此額外摻雜之物質可影響電晶體100之電容，進而改變電晶體100之增益，以下將參照圖3所示以詳細說明增益改變。
圖2A顯示在本發明實施例中，在閘極電極附近之磊晶層上額外摻雜之大略位置，如圖2A所示之裝置具有一近似於圖1C所示之基板結構，其中，化學感測器200可包括具有一第一導電型態之摻雜(如P型)的一磊晶層220、由第二導電型態之摻雜(如N型)所形成之一閘極電極215、以及輕度摻雜區223及225，此輕度摻雜區223及225亦稱為輕度摻雜汲極(LDD)，其係與閘極電極215之摻雜的導電型態(如P型)相同；在本實施例中，可以藉由在輕度摻雜區223及225中植入比閘極電極215更低濃度之摻雜，來達到改變化學感測器200之增益，其中，輕度摻雜區223及225可以利用多向性植入技術，以便在閘極電極215下方之輕度摻雜區223及225植入較低濃度之摻雜；當然，亦可以採用其他技術來達成。另外，在電晶體之源極與汲極端子形成重度摻雜區域，其可以在形成輕度摻雜區域之前或之後進行。圖2B顯示擴散節點223及225之配置，其可以是重度摻雜區域，用以將化學感測器200之源極與汲極端子耦接於相對之閘極電極215與輕度摻雜區223及225。利用已知的技術，可以利用高密度之摻雜(與閘極電極215之摻雜的導電型態相同)來形成重度摻雜區223及225。
圖2C及2D顯示另一實施例之化學感測器，其具有修飾之摻雜。圖2C顯示一化學感測器202，其具有一閘極210以及電極214及216，如圖2C所示，化學感測器202之閘極210與電極214及216可以利用遮罩進行多向性摻雜以植入離子於電極214及216附近，進而形成輕度摻雜區227及229(或輕度摻雜汲極)，其中，輕度摻雜汲極227及229之導電型態(如N+)係與磊晶層相反。在本實施例中，輕度摻雜汲極227及229係形成於化學感測器202中、並位於電極214及216下方。此外，輕度摻雜汲極227及229亦可以利用其他習知的離子植入方法所形成。
利用一光阻層作為遮罩以覆蓋預期之區域，然後形成擴散節點235及237，其係自對準於鄰近於閘極210之電極214及216、並鄰設於輕度摻雜汲極227及229，擴散區域235及237可以利用與閘極210、電極214及216、及輕度摻雜汲極227及229相同之導電型態所形成，且其係與磊晶層221之導電型態相反。如圖2D所示，N+之擴散節點237及239係為重度摻雜區域，且其可以利用任一種習知的半導體製程所形成。另外，亦可以形成其他節點，而輕度摻雜區227及229之摻雜密度程度係低於擴散節點237及239之摻雜密度程度。
圖3顯示本發明實施例之化學感測器中的電容及其對應之摻雜區域，其中，化學感測器300包括一閘極電極384及擴散區域391及395，其係形成磊晶層397上，閘極電極384及擴散區域391及395係為N型摻雜，而磊晶層397係為P型摻雜；當然，亦可以使用相反之摻雜。其中，擴散區域391及395係為重度摻雜，擴散區域391係接觸化學感測器300之源極端子，而擴散區域395係接觸化學感測器300之汲極端子；當然，上述之源極端子與汲極端子可以互換。另外，閘極電極384係連接一浮動閘極(圖未示)以提供一信號。依據習知的電晶體原理，浮動閘極之信號的大小可以控制通道396導通，此時，汲極擴散區域395之信號可以通過此通道396而到達源極擴散區域391。另外，依據化學感測器300之製造，一閘極-汲極電容Cgd係存在於閘極電極384與汲極擴散區域395之間，相同地，一閘極-源極電容Cgs係存在於閘極電極384與源極擴散區域391之間，而電容Cgd及Cgs的電容值會影響化學感測器300之信號增益，電容Cgd及Cgs可以是摻雜之擴散區域391及395與閘極電極384之間的介面區域的結果，其中，部份之電容Cgd及Cgs來自擴散區域與閘極電極384之介面處的寄生電容，其電容值可以利用形成輕度摻雜區394及392於汲極擴散區域395及源極擴散區域391而進行調整。其中，輕度摻雜區394及392的摻雜密度係低於重度摻雜擴散區域391及395之摻雜密度，但可以在擴散區域391及395與閘極電極384之介面處形成其他區域，其係能夠在此介面處形成寄生電容Cpara1及/或Cpara2，而輕度摻雜區之摻雜密度會影響此寄生電容Cpara1及/或Cpara2之電容值。因此，在閘極384與汲極擴散區395之間的總電容係約等於Cgd+Cpara1，而在閘極384與汲極擴散區391之間的總電容係約等於Cgs+Cpara2。
寄生電容值Cpara1及/或Cpara2可以改變化學感測器300之增益，在具有一化學感測器(如離子感測場效電晶體)及一列選擇電晶體之畫素中，其可以利用一源極隨耦器或一共同源極來讀取畫素，依據所採用的配置方式，寄生電容值會以不同方式影響畫素之增益；例如，當利用源極隨耦器之配置時，數字(1)的增益會是最大增益，而寄生電容係用來減少此增益，其係由於信號在射流介面是電容性地耦接於化學感測器之浮動閘極，寄生電容可形成一電容驅動器，其係能夠減少在閘極產生之電壓轉換之電荷，因此，在源極隨耦器之配置中，消除輕度摻雜汲極區域並減少寄生電容可以提供最大的增益。另外，當利用共同源極之配置時，可以藉由控制寄生電容來形成負回饋，以建立有系統的增益值，在不需要任何寄生電容的情況下，畫素可以在讀出期間操作於開放迴路，並具有極大的增益，但其不容易利用製程參數來控制，因此，由於輕度摻雜汲極區域較容易控制，且能夠匹配餘各種裝置，所以可以利用所建立之電容值來控制增益，在共同源極之配置中，最重要的重疊電容為Cgd，畫素之增益係大約等於由Cgd分割之雙層電容，舉例而言，若此雙層電容為3fF，且Cgd之值為0.3fF，則畫素之增益係約為10；當利用輕度摻雜汲極來控制時，此即為較佳之控制參數；為了減少增益，可以利用較大的輕度摻雜汲極延伸區來增加Cgd；相反地，為了增加增益，可以減少輕度摻雜汲極延伸區來降低Cgd；需注意者，Cgd不可以太小，因為過小的Cgd會導致不佳的控制，因此，通常會控制輕度摻雜汲極區域以使得增益的範圍在1至20之間。
舉例而言，在另一實施例中，配合汲極擴散區域395之輕度摻雜區域394可以被消除，而只在化學感測器300中留下輕度摻雜區域392，其中，源極端子391之電容可等於Cgs+Cpara2，而汲極端子395之電容只等於Cds，本實施例之化學感測器300之增益係於前述之實施例(同時具有寄生電容Cpara1及Cpara2)不同，因此，可以利用輕度摻雜區域392及/或394來改變化學感測器300之增益，進而避免形成用來放大化學感測器300之信號的其他電路。
圖4顯示本發明實施例之一化學感測器之示例性結構，化學感測器400包括一微孔洞部401、一組合部403、及一基板部405，其中，微孔洞部401包括一微孔洞410，其具有一鈍化保護層，例如為氧化層415，鄰設於微孔洞410之底部，而待檢測之化學反應係於微孔洞410中進行，並由組合部403之一浮動閘極電極420所檢測。
組合部403包括浮動閘極電極420，其係由交替設置之絕緣層及介電層432、434、436、461、465、469，導電層及金屬層430、452、454、456、471、475及479，以及一閘極電極484所構成；基板部405包括一基板499(具有P+摻雜)、一磊晶層497(具有P+摻雜)、及N+摻雜區491(源極)及493(汲極)，其中，N+摻雜區491(源極)及493(汲極)係為重度摻雜區域，而編號491'及493'係表示輕度摻雜區域。當信號從浮動閘極420傳送至閘極484時，通道494會被導通，當然，基板405、區域491及493、磊晶層497以及閘極484中的摻雜可以相反。
依據操作模式，化學感測器400可以具有一信號增益，其係部分依輕度摻雜區域491'及493'(若存在時)所產生之寄生電容而定，本實施例之化學感測器400可以是一NMOS裝置或一PMOS裝置，例如在標準NMOS或PMOS裝置之浮動閘極上形成微孔洞，此微孔洞結構410包括一氧化物或其他物質415，其能夠傳送一化學樣品(如一特定離子)，以便感測化學感測器400之浮動閘極420的電荷。此電荷轉移可以利用與化學感測器400耦接之讀取電路(圖未示)讀出，而轉移的電荷量即表示微孔洞410中的樣品所帶有之離子量；依據上述方法，可以利用陣列中的每一個化學感測器400偵測其微孔洞410中的樣品的局部變化，例如為一樣品溶液之離子濃度，其係包覆一陣列(圖未示)之化學感測器400。
圖5顯示本發明另一實施例之一化學感測器之示例性結構，化學感測器500包括一微孔洞部501、一組合部503、及一基板部505，其中，微孔洞部501包括一微孔洞510，其具有一鈍化保護層，例如為氧化層515，鄰設於微孔洞510之底部，而待檢測之化學反應係於微孔洞510中進行，並由組合部503之一浮動閘極電極520所檢測。
組合部503包括浮動閘極電極520，其係由交替設置之絕緣層及介電層542、545、546、561、565、569，以及導電層及金屬層552、555、556、571、574、575、577及579所構成；一閘極電極584及接觸部564及567係形成以作為電極581及585；基板部505包括一基板599(具有P+摻雜)、一磊晶層597(具有P+摻雜)、及N+摻雜區591(源極)及595(汲極)，當然，基板505中的摻雜可以相反。電極581及585可以累積閘極電極584的電荷，以限制並隔離之，電極581及585與閘極電極584的電荷耦合可以形成一畫素，其係位於一陣列中以便進行定點讀出，電晶體增益可以藉由閘極電極584與電極581及585之間的電荷傳送而增加；另外，電荷傳送亦可能受寄生電容的運作所影響(如參照圖3之說明)，因此，其亦可能影響電晶體增益；其中，寄生電容可由輕度摻雜區域591'及/或595'所形成，其摻雜密度係低於重度摻雜區域591及595之摻雜密度；此外，電荷傳送亦可能受VR端子563及Tx端子585之影響，其係作為電荷封包之阻障層或孔洞。
需注意者，以上之實施例係僅為一示例性範例，在其他實施例中，亦可以使用更多或較少的金屬層及絕緣層，此外，在不同的實施例中，電極的數量亦可以不同。在形成浮動閘極電極後，可以在化學感測器(包括離子感測器)上形成其他電極及接觸部，其可以利用矽酸四乙酯(tetraethyl orthosilicate,TEOS)形成絕緣層或介電層，並在浮動閘極電極上蝕刻形成微孔洞，然後在微孔洞上形成鈍化保護層，其係至少形成於微孔洞之底部。接著，利用下列之技術，可以藉由上述之結構來感測化學物質及離子，上述之所有實施例之結構皆可行，例如，閘極電極可以由一層多晶矽所形成，而此結構可以具有N+或P+電極，當然，本發明利用單一電極多晶矽間隙間隔方式可以使得電極之間的電荷耦合於極小的製程節點之間，如0.13 um或以下，而0.13 um或以下之製程節點可以利用目前的CMOS製程所形成之電荷耦合結構來達成。然而，需注意者，此製程節點並非限制於上述的尺寸以下，其亦可以為較大之尺寸，本實施例亦可以使用表面通道、濳通道或使用其他離子植入以形成通道終點。
另外，本發明之實施例亦可以利用多重N型離子植入所形成之埋設電荷傳送，來形成所需之電位曲線，藉以避免介面態階及閃爍雜訊。
需注意者，熟悉該項技術者可以藉由上述之各種示例性實施例的簡單說明，來製造本發明之化學感測器並可加以變化，例如，可以利用遮罩技術以便在形成閘極與電極之前先形成輕度摻雜汲極，因此，本說明書所揭露之各步驟並不需要依照特定順序，而且其可以利用任意習知的半導體製程技術來製造。
以上說明係揭露本發明之數種實施例，然而，所揭露之內容應可涵蓋本發明之修飾及變化，另外，雖然部分操作、元件及電路並未詳細說明，但並非用以限制本實施例之範圍，而且雖然本說明書詳細說明特定結構及功能，但其並非用以限制本實施例之範圍。
熟悉該項技術者可以藉由上述之說明，對本發明進行各種變化，請可以單獨或合併實施上述之所有實施例，因此，雖然上述之說明僅列舉部分特定之實施例，但是本發明之實施例及/或方法並非限制於此，熟悉該項技術者可以藉由本說明書之內容、圖示及申請專利範圍而進行任意的修飾及改變。
上述之各種實施例可以藉由硬體元件、軟體元件或其組合加以實現，其中，硬體元件係例如為處理器、微處理器、電路、電路元件(如電晶體、電阻器、電容器、電感器等)、積體電路、特定應用積體電路(ASIC)、可程式邏輯裝置(PLD)、數位訊號處理器(DSP)、現場可編程閘陣列(FPGA)、邏輯閘、暫存器、半導體裝置、晶片、微晶片、晶片組等等；軟體元件係例如為程式、應用程式、電腦程式、系統程式、機械程式、作業系統程式、中介軟體、韌體、軟體模組、例行程序、子程式、功能、方法、程序、軟體介面、應用程式介面(API)、指令集、計算碼、計算機碼、程式碼片段、計算機程式碼片段、文字、數值、符號、或其組合；可以藉由數種分析因子判斷執行一實施例係採用不同之硬體元件及/或軟體元件，例如為預期之計算機速度、功率等級、熱耐受度、程序循環預算、資料輸入速度、資料輸出速度、記憶體來源、資料匯流排速度、及其他設計或效能限制。
例如，部分實施例可以藉由電腦可讀取媒體而實現，其係儲存有一指令或一組指令，以便在一機器上執行時，可以使得此機器實現本實施例之方法及/或操作，此機器可例如包括任一種適用之處理平台、計算平台、計算裝置、處理裝置、計算系統、處理系統、計算機、處理器等等，且其亦可以藉由硬體及/或軟體之任一種適用之組合而實現，其中，電腦可讀取媒體包括任一種適當形式之記憶單元、記憶裝置、記憶物品、記憶媒體、儲存裝置、儲存物品、儲存媒體及/或儲存單元例如為記憶體、可移動式或不可移動式媒體、可抹除式或不可抹除式媒體、可寫入式或可複寫式媒體、數位或類比式媒體、硬碟、軟碟、唯讀記憶光碟、寫入式光碟、可複寫式光碟、光碟、磁式媒體、磁光媒體、卸除式記憶卡或記憶碟、各種數位多功能光碟(DVD)、磁帶、卡帶等等，另外，指令可包括任一種適用之程式碼，如原始碼、編譯碼、直譯碼、可執行碼、靜態程式碼、動態程式碼、加密程式碼等等，其可以利用任一種適用之高階、低階、物件導向、虛擬、編譯及/或直譯之程式語言而實現。
100．．．化學感測器
110．．．多晶矽基板
120．．．磊晶層
130．．．N+摻雜區
133．．．閘極
134．．．電極
136．．．電極
200．．．化學感測器
202．．．化學感測器
210．．．閘極
214．．．電極
215．．．閘極電極
216．．．電極
220．．．磊晶層
221．．．磊晶層
223．．．輕度摻雜區
225．．．輕度摻雜區
227．．．輕度摻雜區
229．．．輕度摻雜區
231．．．擴散節點
233．．．擴散節點
235．．．擴散節點
237．．．擴散節點
300．．．化學感測器
384．．．閘極電極
391．．．擴散區域
392．．．輕度摻雜區
394．．．輕度摻雜區
395．．．擴散區域
396．．．控制通道
397．．．磊晶層
400．．．化學感測器
401．．．微孔洞部
403．．．組合部
405．．．基板部
410．．．微孔洞
415．．．氧化層
420．．．浮動閘極電極
430．．．金屬層
432．．．介電層
434．．．介電層
436．．．介電層
452．．．金屬層
454．．．金屬層
456．．．金屬層
461．．．介電層
465．．．介電層
469．．．介電層
471．．．金屬層
475．．．金屬層
479．．．金屬層
484．．．閘極電極
491．．．N+摻雜區
491'．．．輕度摻雜區域
493．．．N+摻雜區
493'．．．輕度摻雜區域
494．．．通道
497．．．磊晶層
499．．．基板
500．．．化學感測器
501．．．微孔洞部
503．．．組合部
505．．．基板部
510．．．微孔洞
515．．．氧化層
520．．．浮動閘極電極
530．．．金屬層
542．．．介電層
545．．．介電層
546．．．介電層
552．．．金屬層
555．．．金屬層
556．．．金屬層
561．．．介電層
564．．．接觸部
565．．．介電層
567．．．接觸部
569．．．介電層
571．．．金屬層
574．．．金屬層
575．．．金屬層
577．．．金屬層
579．．．金屬層
581．．．電極
584．．．閘極電極
585．．．電極
591．．．N+摻雜區
591'．．．輕度摻雜區域
594．．．通道
595．．．N+摻雜區
595'．．．輕度摻雜區域
597．．．磊晶層
599．．．基板
圖1A至1D為本發明一實施例之示意圖，其係建立一半導體基板；
圖2A至2D為本發明一實施例之示意圖，其係摻雜一半導體以得到輕度摻雜汲極；
圖3為本發明一實施例之示意圖，其顯示由一化學感測器之摻雜區域所提供之電容；
圖4為本發明一實施例之一化學感測器之示例性結構的示意圖；以及
圖5為本發明一實施例之一化學感測器之另一示例性結構的示意圖。
400．．．化學感測器
401．．．微孔洞部
403．．．組合部
405．．．基板部
410．．．微孔洞
415．．．氧化層
420．．．浮動閘極電極
430．．．金屬層
432．．．介電層
434．．．介電層
436．．．介電層
452．．．金屬層
454．．．金屬層
456．．．金屬層
461．．．介電層
465．．．介電層
469．．．介電層
471．．．金屬層
475．．．金屬層
479．．．金屬層
484．．．閘極電極
491．．．N+摻雜區
491'．．．輕度摻雜區域
493．．．N+摻雜區
493'．．．輕度摻雜區域
494．．．通道
497．．．磊晶層
499．．．基板

Claims (23)

  1. 一種化學感測器，包括：一浮動閘極端子，其係電性耦接於一基板上之一閘極電極；一汲極端子連接；一源極端子連接；以及一對摻雜區域，其係形成於該基板中，其中，各該摻雜區域分別包括一輕度摻雜區域及一重度摻雜區域，各該輕度摻雜區域係延伸於該基板上之該閘極電極的下方，且各該重度摻雜區域係延伸以分別耦接於該汲極端子與該源極端子。
  2. 如申請專利範圍第1項所述之化學感測器，更包括：一微孔洞，其係接受一樣品。
  3. 如申請專利範圍第2項所述之化學感測器，其中該微孔洞具有一氧化層，其係設置於該微孔洞之下方並鄰設於該浮動閘極。
  4. 如申請專利範圍第1項所述之化學感測器，其中一寄生電容係形成於該閘極電極與該等輕度摻雜區域之下方。
  5. 如申請專利範圍第1項所述之化學感測器，其中該化學感測器之增益係依據該輕度摻雜區域之摻雜量而改變。
  6. 如申請專利範圍第1項所述之化學感測器，其中該輕度摻雜區域之摻雜密度係低於該重度摻雜區域之摻雜密度。
  7. 一種化學感測器，包括： 一浮動閘極端子，其係電性耦接於一基板上之一閘極電極；一汲極端子連接；一源極端子連接；一對電極，其係形成於該基板上，且分別設置在該閘極電極之兩側；以及一對摻雜區域，其係形成於該基板中，其中該對摻雜區域其中之一包括一輕度摻雜區域及一重度摻雜區域，該輕度摻雜區域係延伸於相對之該等電極其中之一的下方，且該重度摻雜區域係延伸以分別耦接於該汲極端子及該源極端子。
  8. 如申請專利範圍第7項所述之化學感測器，更包括：一微孔洞，其係接受一生物物質。
  9. 如申請專利範圍第8項所述之化學感測器，其中該微孔洞具有一氧化層，其係設置於該微孔洞之下方並鄰設於該浮動閘極。
  10. 如申請專利範圍第7項所述之化學感測器，其中該等電極其中之一係作為一參考電極，以及用於電荷封包之阻障層或孔洞。
  11. 如申請專利範圍第7項所述之化學感測器，其中該等電極其中之一係作為一擴散電極，用以協助電荷封包。
  12. 一種化學感測器，包括：一浮動閘極，其係電性耦接於一閘極電極；一源極，其係形成有一輕度摻雜區域及一重度摻雜區 域；以及一汲極，其係形成有一輕度摻雜區域及一重度摻雜區域；其中，該源極之該輕度摻雜區域與該汲極之該輕度摻雜區域係朝向彼此延伸至一通道區域，且其係鄰設於該浮動閘極及在該浮動閘極下方。
  13. 如申請專利範圍第12項所述之化學感測器，其中該源極與該汲極之該等重度摻雜區域包括：一摻雜濃度，其係大於該源極與該汲極之該等輕度摻雜區域。
  14. 如申請專利範圍第12項所述之化學感測器，其中該源極與該汲極之該等重度摻雜區域係朝向遠離該通道區域及該閘極區域之方向延伸。
  15. 如申請專利範圍第12項所述之化學感測器，其中該源極之該重度摻雜區域係耦接於一金屬接觸部。
  16. 如申請專利範圍第12項所述之化學感測器，其中該汲極之該重度摻雜區域係耦接於一金屬接觸部。
  17. 如申請專利範圍第12項所述之化學感測器，其中該源極之該輕度摻雜區域之體積係大於該汲極之該輕度摻雜區域之體積。
  18. 如申請專利範圍第12項所述之化學感測器，其中該源極與該汲極之該等輕度摻雜區域使得電容增加，以限制該化學感測器之增益。
  19. 一種製造化學感測器之方法，包括下列步驟： 形成一具有一第一導電型態之摻雜的基板；利用與該基板具有相同導電型態之摻雜形成一磊晶層，但其濃度係低於該基板之該摻雜之濃度；利用與用於形成該基板之該第一導電型態之該摻雜不同之一第二導電型態之摻雜，在該磊晶層上形成一電極層，其中，該電極層與該基板上的摻雜濃度係相似；利用遮罩及蝕刻該電極層以得到閘極與電極；利用多向性離子植入技術形成一第一輕度摻雜區域於該等電極其中之一的附近及下方，其中，形成該第一輕度摻雜區域之摻雜的導電型態係與該磊晶層之摻雜的導電型態相反；形成擴散節點，其係自對準於位於該等閘極旁的該等電極，其中，該等擴散節點其中之第一個係鄰設於該第一輕度摻雜區域，其摻雜之導電型態係與該等閘極、該等電極、及該等輕度摻雜區域相同；以及形成一浮動閘極電極、位於該擴散區域上方之電極、及該等電極之接觸部，其係利用交替形成之絕緣層、介電層、導電層、及金屬層而構成。
  20. 如申請專利範圍第19項所述之方法，更包括：利用多向性離子植入技術形成一第二輕度摻雜區域於該等電極其中之一的附近及下方，其中，形成該第二輕度摻雜區域之摻雜的導電型態係與該磊晶層之摻雜的導電型態相反。
  21. 如申請專利範圍第20項所述之方法，其中該等擴散節點 之第二個係鄰設於該第二輕度摻雜區域。
  22. 如申請專利範圍第19項所述之方法，更包括：在一擴散區域上形成另一電極。
  23. 如申請專利範圍第19項所述之方法，更包括：在該浮動閘極上形成一微孔洞以設置一樣品。
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