FR3077926B1 - Dispositif de detection, en particulier incorpore dans un ph-metre, et procede de realisation correspondant. - Google Patents

Dispositif de detection, en particulier incorpore dans un ph-metre, et procede de realisation correspondant. Download PDF

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Publication number
FR3077926B1
FR3077926B1 FR1851297A FR1851297A FR3077926B1 FR 3077926 B1 FR3077926 B1 FR 3077926B1 FR 1851297 A FR1851297 A FR 1851297A FR 1851297 A FR1851297 A FR 1851297A FR 3077926 B1 FR3077926 B1 FR 3077926B1
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FR
France
Prior art keywords
meter
detection device
realization
region
corresponding method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1851297A
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English (en)
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FR3077926A1 (fr
Inventor
Getenet Tesega Ayele
Stephane Monfray
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1851297A priority Critical patent/FR3077926B1/fr
Priority to US16/275,051 priority patent/US10794856B2/en
Publication of FR3077926A1 publication Critical patent/FR3077926A1/fr
Application granted granted Critical
Publication of FR3077926B1 publication Critical patent/FR3077926B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/416—Systems
    • G01N27/4166—Systems measuring a particular property of an electrolyte
    • G01N27/4167—Systems measuring a particular property of an electrolyte pH
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode

Abstract

Dispositif électronique de détection, par exemple un pH-mètre, comprenant un étage de détection (ED) comportant une région isolante (5) apte à recevoir un élément à analyser et réalisée sur une région conductrice (10), un étage de polarisation (EP) comportant au moins une région électriquement conductrice supplémentaire (2), ladite au moins une région supplémentaire (2) et ladite région conductrice (10) étant en couplage capacitif, ladite région isolante présentant une surface totalement libre.
FR1851297A 2018-02-15 2018-02-15 Dispositif de detection, en particulier incorpore dans un ph-metre, et procede de realisation correspondant. Active FR3077926B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1851297A FR3077926B1 (fr) 2018-02-15 2018-02-15 Dispositif de detection, en particulier incorpore dans un ph-metre, et procede de realisation correspondant.
US16/275,051 US10794856B2 (en) 2018-02-15 2019-02-13 Detection device, in particular incorporated in a PH meter, and corresponding production process

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1851297A FR3077926B1 (fr) 2018-02-15 2018-02-15 Dispositif de detection, en particulier incorpore dans un ph-metre, et procede de realisation correspondant.
FR1851297 2018-02-15

Publications (2)

Publication Number Publication Date
FR3077926A1 FR3077926A1 (fr) 2019-08-16
FR3077926B1 true FR3077926B1 (fr) 2023-04-14

Family

ID=62092102

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1851297A Active FR3077926B1 (fr) 2018-02-15 2018-02-15 Dispositif de detection, en particulier incorpore dans un ph-metre, et procede de realisation correspondant.

Country Status (2)

Country Link
US (1) US10794856B2 (fr)
FR (1) FR3077926B1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8878257B2 (en) * 2010-06-04 2014-11-04 Freescale Semiconductor, Inc. Methods and apparatus for an ISFET
WO2012006222A1 (fr) * 2010-07-03 2012-01-12 Life Technologies Corporation Capteur chimiquement sensible doté de drains légèrement dopés
WO2012036679A1 (fr) * 2010-09-15 2012-03-22 Life Technologies Corporation Procédés et appareil de mesure d'analytes
CN104737008B (zh) * 2012-10-16 2017-06-09 皇家飞利浦有限公司 具有感测晶体管阵列的集成电路、感测装置及测量方法

Also Published As

Publication number Publication date
FR3077926A1 (fr) 2019-08-16
US10794856B2 (en) 2020-10-06
US20190250124A1 (en) 2019-08-15

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