JP2007243003A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2007243003A JP2007243003A JP2006065513A JP2006065513A JP2007243003A JP 2007243003 A JP2007243003 A JP 2007243003A JP 2006065513 A JP2006065513 A JP 2006065513A JP 2006065513 A JP2006065513 A JP 2006065513A JP 2007243003 A JP2007243003 A JP 2007243003A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
Abstract
【解決手段】半導体基板101に、pウェル103およびnウェル104を形成し、半導体基板101の表面に高誘電率膜105aおよびシリコン膜105bを形成し、さらに、これらの膜を1000〜1050℃でアニールする。そして、高誘電率膜105aおよびシリコン膜105bをパターニングして、高誘電率ゲート絶縁膜106,107およびゲート電極108,109を形成し、エクステンション領域111,114、サイドウォール110,113、高濃度不純物領域112,115等を形成する。
【選択図】図1
Description
この発明の第1の実施形態に係る製造方法について、図1〜図5を用いて説明する。図1は、この実施形態に係る半導体装置の製造方法を説明するための工程断面図である。
次に、この発明の第2の実施形態に係る製造方法について、図6を用いて説明する。図6は、この実施形態に係る半導体装置の製造方法を説明するための工程断面図である。
102 素子分離領域
103 pウェル
104 nウェル
105a 高誘電率膜
105b ポリシリコン膜
106,107 高誘電率ゲート絶縁膜
108,109 ポリシリコン・ゲート電極
110,113 サイドウォール
111 n型エクステンション領域
112 n型高濃度不純物領域
114 p型エクステンション領域
115 p型高濃度不純物領域
601 ハードマスク膜
602,603 ハードマスクパターン
604,605 フルシリサイド・ゲート電極
Claims (4)
- 半導体基板の表面に、高誘電率膜を形成する第1工程と、
該高誘電率膜をアニールすることなく、該高誘電率膜上にシリコン膜を形成する第2工程と、
前記高誘電率膜をアニールする第3工程と、
該高誘電率膜および該シリコン膜から高誘電率ゲート絶縁膜およびゲート電極を形成する第4工程と、
を含む半導体装置の製造方法。 - 前記第3工程が、アニール温度が1000℃以上1050℃以下のラピッド・サーマル・アニールを行う工程であることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記第3工程が、アニール時間が0.1ミリ秒以上10ミリ秒以下のフラッシュ・ランプ・アニールまたはレーザ・アニールを行う工程であることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記第2工程後且つ前記第3工程前に、前記シリコン膜上にハードマスク膜を形成する第5工程をさらに含み、
前記第4工程が、前記高誘電率膜および前記シリコン膜と同時に前記ハードマスク膜をパターニングすることにより、高誘電率ゲート絶縁膜、ゲート電極およびハードマスクパターンを形成する工程であり、
該第4工程後に、該ハードマスクパターンをマスクとして不純物イオンを注入することによりソース/ドレイン領域を形成する第6工程を有し、且つ、
該第6工程後に、前記ハードマスクパターンを除去した後で前記ゲート電極を金属原子でシリサイド化する第7工程を有する、
ことを特徴とする請求項1〜3のいずれかに記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2006065513A JP2007243003A (ja) | 2006-03-10 | 2006-03-10 | 半導体装置の製造方法 |
US11/715,354 US20070212829A1 (en) | 2006-03-10 | 2007-03-08 | Method of manufacturing a semiconductor device |
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JP2006065513A JP2007243003A (ja) | 2006-03-10 | 2006-03-10 | 半導体装置の製造方法 |
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JP2007243003A true JP2007243003A (ja) | 2007-09-20 |
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JP2006065513A Pending JP2007243003A (ja) | 2006-03-10 | 2006-03-10 | 半導体装置の製造方法 |
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JP (1) | JP2007243003A (ja) |
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JP2013533483A (ja) * | 2010-07-03 | 2013-08-22 | ライフ テクノロジーズ コーポレーション | 低濃度ドープドレインを有する化学的感応性センサ |
JP2014140025A (ja) * | 2012-12-19 | 2014-07-31 | Asahi Kasei Electronics Co Ltd | 半導体装置の製造方法 |
JP2016004952A (ja) * | 2014-06-18 | 2016-01-12 | 旭化成エレクトロニクス株式会社 | 半導体装置の製造方法 |
US9269708B2 (en) | 2006-12-14 | 2016-02-23 | Life Technologies Corporation | Methods and apparatus for measuring analytes using large scale FET arrays |
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JP2010278319A (ja) * | 2009-05-29 | 2010-12-09 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
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JP2002184973A (ja) * | 2000-12-11 | 2002-06-28 | Hitachi Ltd | 半導体装置及びその製造方法 |
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