TWI818928B - 一種製作半導體元件的方法 - Google Patents

一種製作半導體元件的方法 Download PDF

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TWI818928B
TWI818928B TW107138943A TW107138943A TWI818928B TW I818928 B TWI818928 B TW I818928B TW 107138943 A TW107138943 A TW 107138943A TW 107138943 A TW107138943 A TW 107138943A TW I818928 B TWI818928 B TW I818928B
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劉仕佑
温在宇
謝明修
林榮信
李靜宜
楊能輝
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聯華電子股份有限公司
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Abstract

本發明揭露一種製作半導體元件的方法。首先提供一基底，該基底包含一N型金氧半導體(NMOS)區域以及一P型金氧半導體(PMOS)區域，然後形成一襯墊氧化層於基底上，其中襯墊氧化層包含一第一厚度，進行一離子佈植製程將鍺離子植入PMOS區域之基底內，進行一第一清洗製程將PMOS區域之襯墊氧化層之第一厚度降低至一第二厚度，進行一退火製程，再進行一第二清洗製程去除襯墊氧化層。

Description

一種製作半導體元件的方法
本發明是關於一種製作半導體元件的方法，尤指一種利用清洗製程降低襯墊氧化層厚度的方法。
在習知半導體產業中，多晶矽係廣泛地應用於半導體元件如金氧半導體(metal-oxide-semiconductor，MOS)電晶體中，作為標準的閘極填充材料選擇。然而，隨著MOS電晶體尺寸持續地微縮，傳統多晶矽閘極因硼穿透(boron penetration)效應導致元件效能降低，及其難以避免的空乏效應(depletion effect)等問題，使得等效的閘極介電層厚度增加、閘極電容值下降，進而導致元件驅動能力的衰退等困境。因此，半導體業界更嘗試以新的閘極填充材料，例如利用功函數(work function)金屬來取代傳統的多晶矽閘極，用以作為匹配高介電常數(High-K)閘極介電層的控制電極。
然而，在現今金屬閘極電晶體製作過程中，特別是在形成井 區之前所形成的襯墊氧化層中容易含有例如氧化鍺(germanium oxide,GeO)等化合物影響元件電性。因此如何藉由調整現今製程來改善此問題即為現今一重要課題。
本發明一實施例揭露一種製作半導體元件的方法。首先提供一基底，該基底包含一N型金氧半導體(NMOS)區域以及一P型金氧半導體(PMOS)區域，然後形成一襯墊氧化層於基底上，其中襯墊氧化層包含一第一厚度，進行一離子佈植製程將鍺離子植入PMOS區域之基底內，進行一第一清洗製程將PMOS區域之襯墊氧化層之第一厚度降低至一第二厚度，進行一退火製程，再進行一第二清洗製程去除襯墊氧化層。
12:基底
14:NMOS區域
16:PMOS區域
18:淺溝隔離
20:襯墊氧化層
22:離子佈植製程
24:P井
26:N井
28:閘極結構
30:閘極結構
32:閘極介電層
34:閘極材料層
36:側壁子
38:源極/汲極區域
T1:第一厚度
T2:第二厚度
T3:第三厚度
第1圖至第5圖為本發明製作一半導體元件之方法示意圖。
請參照第1圖至第5圖，第1圖至第5圖為本發明一實施例製作半導體元件之方法示意圖。如第1圖所示，首先提供一基底12，例如一矽基底或矽覆絕緣(silicon-on-insulator,SOI)基板，其中基底12上較佳具有一N型金氧半導體(NMOS)區域14以及一P型金氧半導體(PMOS)區 域16以及一淺溝隔離18隔開NMOS區域14與PMOS區域16。需注意的是，本實施例雖以製作平面型(planar)場效電晶體為例，但不侷限於此，本發明又可應用至一般非平面型(non-planar)場效電晶體例如鰭狀結構場效電晶體，此實施例也屬本發明所涵蓋的範圍。
接著形成一襯墊氧化層20於NMOS區域14及PMOS區域16的基底12表面，其中設於NMOS區域14與PMOS區域16的襯墊氧化層20較佳包含一第一厚度T1。在本實施例中，第一厚度T1較佳介於100埃至120埃或更佳約110埃。然後進行一離子佈植製程22將鍺離子植入PMOS區域16的基底12內。
如第2圖所示，在不使用任何圖案化遮罩的情況下進行一第一清洗製程同時去除NMOS區域14與PMOS區域16的部分襯墊氧化層20。需注意的是，由於PMOS區域16的基底12甚至部分襯墊氧化層20內已於前述步驟中經離子佈植製程22植入鍺離子，因此在本階段利用第一清洗製程去除部分襯墊氧化層20時較佳去除較多PMOS區域16的襯墊氧化層20以及較少NMOS區域14的襯墊氧化層20。換句話說，本階段完成第一清洗製程後PMOS區域16的襯墊氧化層20的第一厚度T1較佳降至一第二厚度T2而NMOS區域14的襯墊氧化層20則較佳由第一厚度T1降至第三厚度T3。在本實施例中，PMOS區域16剩餘的襯墊氧化層20第二厚度T2較佳約介於30埃至70埃或更佳約50埃，而此第二厚度T2又較佳略低於NMOS區域14所剩餘的第三厚度T3。在本實施例中，第一清洗製程所使用的清洗溶液較佳包含但不侷限於稀釋氫氟酸(diluted hydrofluoric acid,dHF)，其中稀釋氫氟酸中氫氟酸對去離子水 之比例較佳介於20：1至2000：1。
接著如第3圖所示，進行另一離子佈植製程，分別於NMOS區域14植入P型摻質以及於PMOS區域16植入N型摻質，再進行一退火製程擴散所植入的摻質以於NMOS區域14與PMOS區域16分別形成一P井24與N井26。在本實施例中，退火製程較佳在一不通入氧氣的環境下進行，或更具體而言較佳於一氮氣環境進行退火製程。此外退火製程的溫度較佳介於攝氏1000度至攝氏1100度，或更佳約攝氏1050度。
隨後如第4圖所示，進行一第二清洗製程去除襯墊氧化層20，或更具體而言利用一第一清洗劑以及一第二清洗劑完全去除NMOS區域14以及PMOS區域16上的襯墊氧化層20並暴露出基底12表面。在本實施例中，第一清洗劑較佳選自由氨水、氫氟酸以及氬氣所構成的群組，而第二清洗劑包含稀釋氫氟酸。
在本實施例中，第一清洗劑中的氨水流量較佳約略80每分鐘標準毫升(standard cubic centimeter per minute,sccm)，氫氟酸流量較佳約80每分鐘標準毫升，氬氣流量約107每分鐘標準毫升，而第二清洗劑中稀釋氫氟酸的氫氟酸對去離子水之比例較佳約100：1。
接著如第5圖所示，於進行第二清洗製程後形成一閘極介電層於NMOS區域14及PMOS區域16的基底12上。之後可依據製程需求進行後續電晶體製程，例如可於NMOS區域14與PMOS區域16的基底12上各形成至少一閘極結構28、30或虛置閘極。在本實施例中，閘極結 構28、30之製作方式可依據製程需求以先閘極(gate first)製程、後閘極(gate last)製程之先高介電常數介電層(high-k first)製程以及後閘極製程之後高介電常數介電層(high-k last)製程等方式製作完成。以本實施例之先閘極製程為例，可先依序形成一閘極介電層32或介質層、一由多晶矽所構成之閘極材料層34以及一選擇性硬遮罩(圖未示)於基底12上，並利用一圖案化光阻(圖未示)當作遮罩進行一圖案轉移製程，以單次蝕刻或逐次蝕刻步驟，去除部分閘極材料層34與部分閘極介電層32，然後剝除圖案化光阻，以於基底12上形成由圖案化之閘極介電層32與圖案化之閘極材料層34所構成的閘極電極或閘極結構28、30。
然後在各閘極結構28、30側壁形成至少一側壁子36，於側壁36兩側的基底12中形成一源極/汲極區域38及/或磊晶層(圖未示)，並選擇性於源極/汲極區域38及/或磊晶層的表面形成一金屬矽化物(圖未示)。在本實施例中，側壁子36可為單一側壁子或複合式側壁子，例如可細部包含一偏位側壁子以及一主側壁子。其中偏位側壁子與主側壁子可包含相同或不同材料，且兩者均可選自由氧化矽、氮化矽、氮氧化矽以及氮碳化矽所構成的群組。源極/汲極區域38可依據所置備電晶體的導電型式而包含不同摻質，例如NMOS區域14的源極/汲極區域38可包含N型摻質以及/或由磷化矽所構成的磊晶材料而PMOS區域16的源極/汲極區域38則可包含P型摻質及/或鍺化矽所構成的磊晶材料。之後可再依據製程需求形成例如層間介電層環繞各閘極結構以及接觸插塞於層間介電層內分別電連接基底內的源極/汲極區域。至此即完成本發明一半導體元件的製作。
一般而言，現行製程於形成襯墊氧化層後以及形成井區之前通常會以離子佈植製程將鍺離子植入PMOS區域的基底內藉此提升電壓的穩定性。然而鍺離子在離子佈植過程中通常會與襯墊氧化層中的氧原子產生化學反應形成氧化鍺(GeO)以及二氧化鍺(GeO2)等兩種化合物，其中屬於不可溶性(insoluble)化合物的氧化鍺容易影響整個元件的電性但屬於可溶性(soluble)化合物的二氧化鍺則無此問題。
由於較厚的襯墊氧化層內經實驗證明較容易同時存在氧化鍺(GeO)以及二氧化鍺(GeO2)等兩種化合物而較薄的襯墊氧化層內則僅存在二氧化鍺，本發明主要在形成襯墊氧化層以及以離子佈植製程將鍺離子植入PMOS區域後進行一道清洗製程來降低PMOS區域襯墊氧化層的厚度，使剩餘的襯墊氧化層中僅包含二氧化鍺且無任何氧化鍺，來藉此提升整個元件的穩定性。另外需注意的是，雖然襯墊氧化層中可能包含影響元件電性的氧化鍺化合物，但若在形成井區之前便完全去除襯墊氧化層又容易使其他雜質(impurity)進入基底內，因此本發明較佳於進行的清洗製程時僅去除NMOS區域與PMOS區域的部分襯墊氧化層但不完全去除襯墊氧化層暴露出各電晶體區的基底表面。以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
12:基底
14:NMOS區域
16:PMOS區域
18:淺溝隔離
20:襯墊氧化層
T2:第二厚度
T3:第三厚度

Claims (11)

  1. 一種製作半導體元件的方法，包含：提供一基底，該基底包含一N型金氧半導體(NMOS)區域以及一P型金氧半導體(PMOS)區域；形成一襯墊氧化層於該基底上，其中該襯墊氧化層包含一第一厚度；進行一離子佈植製程將鍺離子植入該PMOS區域之該基底內；進行一第一清洗製程將該PMOS區域之該襯墊氧化層之該第一厚度降低至一第二厚度，以及將該NMOS區域之該襯墊氧化層之該第一厚度降低至一第三厚度，其中該第二厚度低於該第三厚度；進行一退火製程；以及進行一第二清洗製程去除該襯墊氧化層。
  2. 如申請專利範圍第1項所述之方法，另包含利用稀釋氫氟酸來進行該第一清洗製程。
  3. 如申請專利範圍第2項所述之方法，其中該稀釋氫氟酸中氫氟酸對去離子水之比例係介於20：1至2000：1。
  4. 如申請專利範圍第1項所述之方法，其中該退火製程之溫度係介於攝氏1000度至攝氏1100度。
  5. 如申請專利範圍第1項所述之方法，另包含於一氮氣環境進 行該退火製程。
  6. 如申請專利範圍第5項所述之方法，另包含於進行該退火製程時不通入氧氣。
  7. 如申請專利範圍第5項所述之方法，另包含進行該第二清洗製程以完全去除該NMOS區域以及該PMOS區域上之該襯墊氧化層。
  8. 如申請專利範圍第7項所述之方法，另包含利用一第一清洗劑以及一第二清洗劑來進行該第二清洗製程。
  9. 如申請專利範圍第8項所述之方法，其中該第一清洗劑係選自由氨水、氫氟酸以及氬氣所構成的群組。
  10. 如申請專利範圍第8項所述之方法，其中該第二清洗劑包含稀釋氫氟酸。
  11. 如申請專利範圍第1項所述之方法，另包含於進行該第二清洗製程後形成一閘極介電層於該NMOS區域以及該PMOS區域之該基底上。
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