WO2009081890A1 - 複合検出装置 - Google Patents
複合検出装置 Download PDFInfo
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- WO2009081890A1 WO2009081890A1 PCT/JP2008/073261 JP2008073261W WO2009081890A1 WO 2009081890 A1 WO2009081890 A1 WO 2009081890A1 JP 2008073261 W JP2008073261 W JP 2008073261W WO 2009081890 A1 WO2009081890 A1 WO 2009081890A1
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- 238000003860 storage Methods 0.000 claims abstract description 53
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 239000000126 substance Substances 0.000 claims abstract description 17
- 238000001514 detection method Methods 0.000 claims description 73
- 239000002131 composite material Substances 0.000 claims description 39
- 238000009825 accumulation Methods 0.000 claims description 27
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- 150000001875 compounds Chemical class 0.000 description 2
- 230000023077 detection of light stimulus Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/4035—Combination of a single ion-sensing electrode and a single reference electrode
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/85—Investigating moving fluids or granular solids
- G01N21/8507—Probe photometers, i.e. with optical measuring part dipped into fluid sample
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T436/00—Chemistry: analytical and immunological testing
- Y10T436/11—Automated chemical analysis
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T436/00—Chemistry: analytical and immunological testing
- Y10T436/14—Heterocyclic carbon compound [i.e., O, S, N, Se, Te, as only ring hetero atom]
- Y10T436/142222—Hetero-O [e.g., ascorbic acid, etc.]
- Y10T436/143333—Saccharide [e.g., DNA, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T436/00—Chemistry: analytical and immunological testing
- Y10T436/25—Chemistry: analytical and immunological testing including sample preparation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T436/00—Chemistry: analytical and immunological testing
- Y10T436/25—Chemistry: analytical and immunological testing including sample preparation
- Y10T436/25375—Liberation or purification of sample or separation of material from a sample [e.g., filtering, centrifuging, etc.]
Definitions
- the present invention relates to a composite detection apparatus.
- This composite detection apparatus detects, for example, the pH of the same detection target and the light from the detection target.
- Patent Document 1 proposes a single detection device for detecting the pH value of the same detection target and the light from the detection target.
- the composite detection device described in Patent Document 1 has a configuration in which a charge transfer type photodetection device is combined with a charge transfer type pH detection device, but the detection of the pH value and the detection of light are performed in time series. It is done alternately. That is, there is a slight difference between the detection time of the pH value and the detection time of light.
- the pH detector is required to accumulate the charge of the sensing unit. Assuming that the time required for one charge accumulation is 1 millisecond, 0.1 accumulation is required for 100 accumulations, and light cannot be detected during this period.
- the composite detection devices By arranging the composite detection devices in a matrix, the pH distribution (pH image) and light distribution (light image) of the detection target can be measured.
- Patent Documents 2 and 3 See Patent Documents 2 and 3 as references for the present invention. JP-A-11-201775 JP 2004-28723 A JP 2002-98667 A
- an object of the present invention is to propose a composite detection apparatus capable of simultaneously detecting the value of a physical / chemical phenomenon such as pH and the amount of energy rays such as light.
- the first aspect of the present invention is defined as follows.
- a first sensing unit whose potential changes in response to chemical and physical phenomena;
- a first charge supply unit for supplying a first charge to the first sensing unit;
- a first charge supply adjustment unit formed between the first sensing unit and the first charge supply unit;
- a first charge storage section for storing the first charge transferred from the first sensing section;
- a chemical / physical phenomenon detection system comprising a first charge transfer control unit formed between the first sensing unit and the first charge storage unit;
- the first sensing unit includes a semiconductor charge generation unit that receives light and other energy rays to generate the first charge and the second charge, The semiconductor charge generation unit;
- a second charge accumulating unit for accumulating the second electric charge generated by the semiconductor charge generating unit, wherein a potential on the opposite side of the first charge accumulating unit with respect to the first sensing unit is set;
- An energy ray detection system comprising: a second charge storage unit having:
- the energy ray detection system is independent from the accumulation of the first charge in the first charge accumulation unit of the chemical / physical phenomenon detection system.
- the second charge is accumulated in the second charge accumulation portion.
- the first charge storage unit stores the first charge corresponding to the value of the chemical / physical phenomenon (for example, the pH value) detected by the chemical / physical phenomenon detection system.
- the second charge storage unit stores the second charge corresponding to the amount (or intensity) of the energy beam (for example, light) detected by the energy beam detection system.
- the first charge can be an electron or a hole
- the second charge can be a hole or an electron.
- the third aspect of the present invention is defined as follows. That is, in the composite detection device defined in the first or second aspect, a buried channel layer having a conductivity type different from that of the substrate is formed on the surface of the semiconductor substrate in the semiconductor charge generation unit.
- a p-type semiconductor substrate is employed, an n layer is stacked as a buried channel layer on the surface of the substrate, at least on the sensing unit.
- a potential profile as shown in FIG. 1 is obtained.
- electrons generated by the photoelectric effect move to the conduction band, and holes move to the valence band. Since the electrons move to the higher potential, they move to the potential well. On the other hand, the hole moves toward a lower potential.
- the thickness of the buried channel (that is, the doping depth of the n dopant) is equal to or greater than the thickness at which the energy beam can penetrate.
- the fourth aspect of the present invention is defined as follows. That is, In the composite detection device defined in any one of the first to third aspects, the charge supply unit and the first charge storage unit are formed on two opposing sides of the first sensing unit, and the second Are formed on the remaining sides of the first sensing unit. According to the composite detection apparatus thus defined, a general-purpose configuration is adopted as the chemical / physical phenomenon detection system, and thus the manufacturing process is easy.
- the fifth aspect of the present invention is defined as follows. That is, In the composite detection device defined in any one of the first to third aspects, the charge supply unit and the first charge storage unit are formed on two adjacent sides in the first sensing unit, and the second Are formed on the remaining adjacent sides in the first sensing unit. According to the composite detection device of the fifth aspect defined as described above, the second charge accumulation unit is formed on adjacent sides in the first sensing unit. Since the second charge storage units formed on the adjacent sides can be made continuous, the capacity of the second charge storage unit can be increased, and the dynamic range of energy beam detection is widened.
- the sixth aspect of the present invention is defined as follows. That is, In the composite detection device defined in any one of the first to fifth aspects, an output gate is stacked on the second charge storage unit through an insulating film, and the second charge storage unit stores the output gate. Means for reading out the first charge generated at the output gate as a capacitance coupling corresponding to the second charge is further provided. The first charge read out in this way (corresponding to the second charge accumulated in the second charge accumulation unit) is converted into a voltage by a source follower circuit having a simple configuration, for example, Output. That is, by adopting the composite detection device defined in the sixth aspect, the amount of energy rays can be easily specified based on the amount of the second charge accumulated in the second charge accumulation unit. Become.
- the seventh aspect of the present invention is defined as follows. That is, In the composite detection device defined in any one of the first to fifth aspects, a second sensing unit whose potential changes based on the potential of the second charge storage unit; A second charge supply unit for supplying a first or second charge to the second sensing unit; A second charge supply adjustment unit formed between the second sensing unit and the second charge supply unit; A third charge storage unit that is transferred from the second sensing unit and stores the first or second charge; A second charge transfer control unit formed between the second sensing unit and the third charge storage unit; The timing for supplying the charge from the second charge supply unit to the second sensing unit is synchronized with the timing for supplying the charge from the first charge supply unit to the first sensing unit, and the second The timing at which charges are transferred from the first sensing unit to the third charge storage unit is synchronized with the timing at which charges are transferred from the first sensing unit to the first charge storage unit.
- the potential of the second charge storage unit (depending on the second charge stored therein) is detected by the charge transfer type potential sensor.
- the amount of charge accumulated in the second charge accumulation unit can be accurately measured.
- the structure of the charge transfer type potential sensor is the same as or similar to the structure of the chemical / physical phenomenon detection system, thereby facilitating its manufacture. Also, control is facilitated by synchronizing the timings of both operations.
- FIG. 3 shows a cross-sectional structure taken along line EE in FIG.
- the structure of the source follower circuit which converts the detection result of a composite detection apparatus into an output voltage is shown.
- the other output conversion means of the detection result of a composite detection apparatus is shown.
- FIG. 2 is a plan view of the composite detection apparatus 1 according to the embodiment of the present invention.
- a cross-sectional view taken along line C and a cross-sectional view taken along line D in FIG. 2 is shown in FIG.
- FIG. 4 is a cross-sectional view taken along line E in FIG.
- the composite detection device 1 shown in FIG. 2 includes a pH detection system 10 and a light detection system 30.
- the pH detection system 10 is formed along line C in FIG.
- the pH detection system 10 has a configuration similar to that of the prior art. That is, as shown in FIG. 3A, an n layer and an n + layer are formed on the surface of the silicon substrate (p-type) 11.
- a silicon oxide film (insulating film) 13 is formed on the surface of the silicon substrate 11, and a metal film is patterned on the insulating film 13 to form various electrodes.
- the n layer becomes the buried channel layer 15.
- reference numeral 21 denotes a sensing unit
- reference numeral 22 denotes a charge supply unit
- reference numeral 23 denotes a charge supply adjustment unit.
- a recess is formed on the surface of the insulating film 13 so as to contact the detection target in a wet state
- a reference electrode 25 is provided in the sensing unit 21
- a buried channel layer (n layer) is formed on the surface of the substrate 11.
- the sensing unit 21 touches the detection target, the potential changes according to the pH.
- electrons and holes are formed by the photoelectric effect.
- the buried channel layer is formed in the sensing unit 21, as described above (see FIG. 1), a part of the hole is accumulated in the peak portion of the potential on the substrate surface.
- electrons enter a potential well formed according to pH.
- the charge supply unit 22 includes an n + region and is connected with an input diode ID.
- the charge supply adjustment unit 23 makes the input adjustment gate electrode ICG face the semiconductor substrate 11 through the insulating film 13 between the sensing unit 21 and the charge supply unit 22, and applies a predetermined voltage to the gate electrode ICG.
- a potential wall is formed between the charge supply unit 22 and the sensing unit 21.
- An independently controllable second input adjustment gate electrode can be formed between the sensing unit 21 and the input adjustment gate electrode ICG.
- a potential well continuous to the sensing unit 21 can be formed by the second input adjustment gate electrode, and electrons remaining in the sensing unit 21 can be sucked into the potential well.
- reference numeral 26 denotes a first charge storage unit
- reference numeral 27 denotes a charge transfer adjustment unit.
- the first charge storage unit 26 is also called a following diffusion region and is composed of the n + region of the substrate 11.
- the charge transfer adjusting unit 27 makes the transfer gate electrode TG face the semiconductor substrate 11 through the insulating film 13 between the sensing unit 21 and the first charge storage unit 26, and applies a predetermined voltage to the transfer gate electrode TG. By applying the voltage, a potential wall is formed between the sensing unit 21 and the first charge storage unit 26. Then, the charge of the sensing unit 21 is transferred to the first charge storage unit 26 by changing the height of the potential wall.
- the electrons stored in the first charge storage unit 26 are read out to the source follower circuit shown in FIG. 5 at a predetermined timing and converted into the output voltage Vout. That is, when the gate voltage of the MOS changes according to the charge stored in the first charge storage unit 26, the current flowing through the resistor changes, and as a result, the output voltage Vout changes.
- the reset gate electrode RG and the reset diode are for resetting the charge of the first charge storage unit 26.
- the light detection system 30 is formed along the D line in FIG.
- Reference numeral 31 shown in FIG. 3A denotes a second charge storage portion.
- the potential of the second charge storage unit 31 is on the side opposite to the first charge storage unit 26.
- holes generated by the photoelectric effect on the surface side of the sensing 21 and close to the second charge accumulation unit 31 are accumulated in the second charge accumulation unit 31 (see FIG. 1).
- the second charge storage unit 31 is formed by making the floating gate electrode FG face the semiconductor substrate 11 through the insulating film 13.
- Reference numeral 33 denotes an n + region.
- FIG. 4 A cross-sectional view taken along line E of FIG. 2 is shown in FIG.
- the second charge storage unit 31 is sandwiched between the input adjustment gate electrode ICG and the reset gate electrode RG2 having a relatively high potential. Due to the potential wells 36 and 37 formed by these electrodes and the potential well formed by the n + region 33, the second charge accumulation unit 31 is independent of other regions. In other words, holes can be accumulated at any timing.
- Electrons are generated by capacitance coupling in the floating gate electrode FG facing the surface of the semiconductor substrate in which holes are accumulated via the insulating film (thin film) 13.
- the electrons are read out by the source follower circuit shown in FIG. 5 and converted into the output voltage Vout. That is, when the gate voltage of the MOS changes according to the charge generated in the floating gate electrode FG, the current flowing through the resistor changes, and as a result, the output voltage Vout changes.
- FIG. 3B As a result of the previous detection, electrons are present in the first charge accumulation unit 26, and holes are accumulated in the second charge accumulation unit 31. From this state, the charge of the first charge storage section 26 and the charge of the following gate electrode FG are read out to the source follower circuits connected to each other, and the output voltage Vout is obtained. Thereafter, as shown in FIG. 3C, the potential of the reset gate electrode RG is adjusted to discharge the charge of the first charge storage portion 26 from the reset diode RD to the outside. On the other hand, the holes accumulated in the second charge accumulation unit 31 adjust the potential of the second reset gate electrode RG2 and cause the potential well 37 to disappear. As a result, the holes diffuse to the substrate surface and disappear. Thereby, the composite detection apparatus 1 is reset.
- FIG. 3D The new detection of the pH value and light by the composite detection apparatus 1 is restarted from FIG.
- FIG. 3D electrons overflow from the charge supply unit 22 to fill the sensing unit 21 with electrons.
- FIG. 3E when the electrons in the charge supply unit 22 are decreased, the electrons in the sensing unit 21 are worn by the potential wall of the charge supply adjusting unit 23, and the sensing unit 21 Remains in an amount corresponding to the potential depth (depending on pH).
- FIG. 3F the potential of the transfer gate electrode TG is adjusted to transfer the electrons remaining in the sensing unit 21 to the first charge storage unit 26, where they are stored. By repeating the operations from FIG. 3D to FIG. 3F, electrons are accumulated in the first charge accumulation portion.
- the holes formed by the light incident on the sensing unit 21 continue, that is, accumulate in the second charge storage unit 31 without any interruption. Is done. Hole formation is proportional to the amount of incident light. That is, the amount of light incident on the sensing unit is detected simultaneously with the detection of the pH value. From this state, if the charge of the first charge storage section 26 and the charge of the following gate electrode FG are read out to the source follower circuit connected to each, the output voltage Vout and the pH value corresponding to the pH value are measured at the same time. In the meantime, an output voltage Vout corresponding to the amount of light incident on the sensing unit can be obtained.
- FIG. 6 shows another system for measuring the charge of the floating gate electrode FG.
- the same elements as those in FIG. 2 are denoted by the same reference numerals, and the description thereof is omitted.
- reference numeral 121 denotes a charge measuring unit.
- the charge amount of the floating gate electrode FG is measured using a general-purpose chemical / physical phenomenon measuring apparatus, and the chemical / physical phenomenon measuring apparatus is the same type as the pH detection system 10 of the embodiment.
- the configuration is adopted. Thereby, a common manufacturing process can be achieved and the manufacturing cost of the measuring apparatus can be reduced.
- the second reset gate electrode RG2 is turned on at the timing of transferring charges (see FIG. 6F) to temporarily reset the holes accumulated in the second charge accumulation unit 31. Thereby, detection of pH value and detection of light can be synchronized more precisely.
- FIG. 7 shows a composite measuring apparatus 200 according to another embodiment.
- the charge supply unit and the charge supply adjustment unit are arranged on one side of the two opposing sides of the rectangular sensing unit 21, and the first charge accumulation unit and the charge are arranged on the other side.
- a transfer adjustment unit is arranged, and a second charge storage unit is arranged on the other side of the sensing unit 21.
- the second charge accumulation unit is disposed on two opposite sides of the sensing unit 21. That is, in comparison with FIG. 2, the second floating gate electrode FG2, the third reset gate electrode RG3, and the second n + region are formed along the lower side of the sensing unit 21.
- the second floating gate electrode FG2 is connected to the source follower circuit shown in FIG. 5 or the measuring apparatus shown in FIG.
- FIG. 8 shows a composite measuring apparatus 300 of another embodiment.
- the charge supply unit and the charge supply adjustment unit are arranged on one side of adjacent sides, and the first charge accumulation unit and the charge transfer adjustment unit are arranged on the other side.
- the second charge accumulation unit is disposed on the remaining two adjacent sides.
- the volume of the second charge storage section is increased, and more holes can be stored. Thereby, a large dynamic range can be secured.
- the configuration is simplified and the size can be reduced.
- the electrode and the heavily doped region may be arranged linearly around the sensing unit with the sensing unit as the center. Therefore, the composite measuring apparatus according to the present invention is suitable for forming a high-density array, and it is possible to image each distribution of pH value and light quantity at the same time in the detection target with high accuracy.
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Abstract
Description
特許文献1に記載の複合検出装置は電荷転送型のpH検出装置と同じく電荷転送型の光検出装置とを融合させた構成であるが、pH値の検出と光の検出とが時系列的に交互に行われている。即ち、pH値の検出時間と光の検出時間との間に僅かながらも差が生じている。
高いS/N比を確保するため、pH検出装置にはセンシング部の電荷を累積することが求められる。1回の電荷累積に要する時間を1ミリ秒とすると、100回の累積を行えば0.1秒が必要になり、この間は光の検出をすることができない。
複合検出装置をマトリックス状に配置することにより、検出対象のpH分布(pHイメージ)や光分布(光イメージ)を測定することができる。
そこでこの発明は、pH等の物理・化学現象の値と光等のエネルギー線の量の検出とを同時に行うことのできる複合検出装置を提案することを目的とする。
化学・物理現象に対応してポテンシャルが変化する第1のセンシング部と、
前記第1のセンシング部へ第1の電荷を供給する第1の電荷供給部と、
前記第1のセンシング部と第1の前記電荷供給部との間に形成される第1の電荷供給調節部と、
前記第1のセンシング部から転送された第1の電荷を蓄積する第1の電荷蓄積部と、
前記第1のセンシング部と前記第1の電荷蓄積部との間に形成される第1の電荷転送調節部とを備えてなる、化学・物理現象検出系と、
前記第1のセンシング部は光その他のエネルギー線を受けて前記第1の電荷と第2の電荷とを生成する半導体電荷生成部を備え、
該半導体電荷生成部と、
該半導体電荷生成部で生成された第2の電荷を蓄積する第2の電荷蓄積部であって、前記第1のセンシング部を基準にして前記第1の電荷蓄積部とは反対側の電位を有する第2の電荷蓄積部と、を備えてなるエネルギー線検出系と、
を具備する複合検出装置。
ここにおいて、光電効果により発生した電子は伝導帯へ、ホールは荷電子帯へ移動する。電子は電位が高いほうへ移動するので、電位の井戸へ移動する。逆にホールは電位が低い方へ移動する。基板表面(S)から遠いところで発生したホールは図1で右側方向(基板裏面側)へ逃げる。一方、基板表面(S)に近いところ(電位の谷(V)より基板表面(S)側)で発生したホールは基板表面(S)に形成される電位の山に蓄積される。このホールを光出力として読み出すことができる。
以上より、埋め込みチャネルの膜厚は(即ち、nドーパントのドープ深さは)、エネルギー線が侵入可能な厚さと等しいかそれより厚くする
第1~第3のいずれかの局面に規定の複合検出装置において、前記電荷供給部と前記第1の電荷蓄積部とは前記第1のセンシング部の対向する2辺に形成され、前記第2の電荷蓄積部は前記第1のセンシング部において残りの辺に形成される。
このように規定された複合検出装置によれば、化学・物理現象検出系として汎用的な構成が採用されるので、製造プロセスが容易である。
第1~第3のいずれかの局面に規定の複合検出装置において、前記電荷供給部と前記第1の電荷蓄積部とは前記第1のセンシング部において隣り合う2辺に形成され、前記第2の電荷蓄積部は前記第1のセンシング部において残りの隣り合う辺に形成される。
このように規定される第5の局面の複合検出装置によれば、第2の電荷蓄積部が第1のセンシング部において隣り合う辺に形成される。隣り合う辺にそれぞれ形成された第2の電荷蓄積部はこれを連続体とすることができるので、第2の電荷蓄積部の大容量化が可能となり、エネルギー線検出のダイナミックレンジが広くなる。
第1~第5のいずれかの局面に規定の複合検出装置において、前記第2の電荷蓄積部には絶縁膜を介して出力ゲートが積層され、前記第2の電荷蓄積部に蓄積された前記第2の電荷に対応したキャパシタンスカップリングとして前記出力ゲートに生成された第1の電荷を読み出す手段が更に備えられている。
このようにして読み出された第1の電荷(第2の電荷蓄積部に蓄積された第2の電荷に対応している)は、例えば簡易な構成のソースフォロワー回路などにより電圧に変換され、出力とされる。即ち、この6の局面に規定の複合検出装置を採用することにより、第2の電荷蓄積部に蓄積された第2の電荷の量に基づき、エネルギー線の量を簡易に特定することが可能となる。
第1~第5のいずれかの局面に規定の複合検出装置において、前記第2の電荷蓄積部の電位に基づきポテンシャルが変化する第2のセンシング部と、
前記第2のセンシング部へ第1又は第2の電荷を供給する第2の電荷供給部と、
前記第2のセンシング部と前記第2の電荷供給部との間に形成される第2の電荷供給調節部と、
前記第2のセンシング部から転送され前記第1又は第2の電荷を蓄積する第3の電荷蓄積部と、
前記第2のセンシング部と前記第3の電荷蓄積部との間に形成される第2の電荷転送調節部とを備え、
前記第2の電荷供給部から前記第2のセンシング部へ電荷を供給するタイミングは前記第1の電荷供給部から前記第1のセンシング部へ電荷を供給するタイミングと同期しており、前記第2のセンシング部から前記第3の電荷蓄積部へ電荷を転送するタイミングは前記第1のセンシング部から前記第1の電荷蓄積部へ電荷を転送するタイミングと同期している。
このように規定された第7の局面に記載の発明によれば、第2の電荷蓄積部の電位(ここに蓄積された第2の電荷に依存)を電荷転送型の電位センサで検出するので、第2の電荷蓄積部に蓄積される電荷の量を正確に測定できる。
このとき、電荷転送型の電位センサの構造を化学・物理現象検出系の構造と同一もしくは同種とすることにより、その製造が容易になる。
また、両者の動作のタイミングを同期させることにより、制御も容易になる。
11 半導体基板
13 絶縁層
20 pH検出系
21 センシング部
22 電荷供給部
23 電荷供給調節部
26 第1の電荷蓄積部
27 電荷転送調節部
31 第2の電荷蓄積部
図2に示す複合検出装置1はpH検出系10と光検出系30とを備えている。
pH検出系10は、図2においてC線に沿って形成されている。このpH検出系10は従来と同様な構成を採る。即ち、図3(A)に示すように、シリコン基板(p型)11の表面にn層及びn+層が形成される。シリコン基板11の表面にはシリコン酸化膜(絶縁膜)13が形成され、この絶縁膜13の上に金属膜がパターニングされて各種の電極を形成する。n層が埋め込みチャネル層15となる。
センシング部21において絶縁膜13の表面には検出対象にウエットな状態で接触できるように凹部が形成されるとともに、参照電極25が配設される。センシング部21において基板11の表面には埋め込みチャネル層(n層)が形成されている。
かかるセンシング部21が検出対象に触れると、そのpHに応じてポテンシャルが変化する。また、センシング部21へ光が導入されると光電効果により電子とホールが形成される。ここにセンシング部21には埋め込みチャネル層が形成されているので、既述のように(図1参照)ホールの一部が基板表面のポテンシャルの山部へ蓄積される。他方電子はpHに応じて形成されたポテンシャルの井戸へ入り込む。
センシング部21と入力調節ゲート電極ICGとの間に、独立に制御可能な第2の入力調節ゲート電極を形成することができる。当該第2の入力調節ゲート電極によりセンシング部21に連続するポテンシャル井戸を形成し、センシング部21に残存する電子を当該ポテンシャル井戸へ吸い込ませることができる。
第1の電荷蓄積部26に蓄積された電子は、所定のタイミングで図5に示すソースフォロワー回路に読み出され、出力電圧Voutに変換される。即ち、第1の電荷蓄積部26に蓄積された電荷に応じてMOSのゲート電圧が変化すると抵抗に流れる電流が変化し、その結果、出力電圧Voutが変化する。
リセットゲート電極RG及びリセットダイオードは第1の電荷蓄積部26の電荷をリセットするためのものである。
図3(A)に示す符号31は第2の電荷蓄積部である。センシング部21の電位からみたとき、第2の電荷蓄積部31のポテンシャルは第1の電荷蓄積部26と反対側にある。これにより、センシング21の表面側において光電効果により生成されたホールであって、当該第2の電荷蓄積部31に近いものがこの第2の電荷蓄積部31へ蓄積される(図1参照)。
第2の電荷蓄積部31は半導体基板11へ、絶縁膜13を介してフローティングゲート電極FGを対向させてなる。
符号33はn+領域である。
図4からわかるように、第2の電荷蓄積部31は、比較的高電位の入力調節ゲート電極ICGとリセットゲート電極RG2ではさまれている。これら電極によるポテンシャルの井戸36、37と、n+領域33によるポテンシャルの井戸により、第2の電荷蓄積部31は他の領域から独立している。換言すれば、どのタイミングにおいてもホールを蓄積することができる。
図3(B)は前回の検出結果として電子が第1の電荷蓄積部26に存在し、第2の電荷蓄積部31にはホールが蓄積されている。
この状態から第1の電荷蓄積部26の電荷及びフォローティングゲート電極FGの電荷をそれぞれに接続されたソースフォロア回路へ読み出して、出力電圧Voutを得る。
その後、図3(C)に示すように、リセットゲート電極RGの電位を調節して第1の電荷蓄積部26の電荷をリセットダイオードRDから外部へ排出する。一方、第2の電荷蓄積部31に蓄積されたホールは、第2のリセットゲート電極RG2の電位を調整してポテンシャルの井戸37を消失させる。これにより、ホールは基板表面へ拡散し、消滅する。
これにより、複合検出装置1はリセットされる。
図3(D)では電荷供給部22から電子をあふれ出させてセンシング部21を電子で充満する。次に、図3(E)に示すように、電荷供給部22の電子を減少させると、電荷供給調節部23のポテンシャルの壁により、センシング部21の電子がすり切られて、センシング部21には、そのポテンシャルの深さ(pHに依存)に対応した量の電子が残存する。
図3(F)では転送ゲート電極TGの電位を調節して、センシング部21に残存した電子を第1の電荷蓄積部26へ転送し、そこに蓄積する。
図3(D)~図3(F)までの動作を繰り返すことにより、第1の電荷蓄積部には電子が累積されることとなる。
この間(図3(D)~図3(F)を繰り返す間)、センシング部21へ入射した光により形成されるホールは継続して、即ち何ら途切れることなく、第2の電荷蓄積部31へ蓄積される。ホールの形成は入射された光の量に比例する。即ち、pH値の検出を行うと同時にセンシング部へ入射された光の量が検出されることとなる。
この状態から、第1の電荷蓄積部26の電荷及びフォローティングゲート電極FGの電荷をそれぞれに接続されたソースフォロア回路へ読み出せば、同時に、pH値に対応した出力電圧VoutとpH値を測定した間にセンシング部へ入射された光の量に対応した出力電圧Voutを得ることができる。
この例では、フローティングゲート電極FGの電荷量を、汎用的な化学・物理現象測定装置を用いて測定するものであり、当該化学・物理現象測定装置には、実施例のpH検出系10と同種の構成を採用している。これにより、製造工程の共通化が達成でき測定装置の製造コストが削減される。
図6の測定装置において、電荷供給のタイミング及び電荷転送のタイミングは、図2の複合検出装置1におけるそれらのタイミングと同期させることが好ましい。なお、電荷を転送するタイミング(図6(F)参照)で第2のリセットゲート電極RG2をオンして、第2の電荷蓄積部31に蓄積されたホールを一旦リセットすることが好ましい。これにより、pH値の検出と光の検出とをより精密に同期させられる。
図2の複合測定装置1では、矩形のセンシング部21に対してその対向する2辺の一方側に電荷供給部及び電荷供給調節部を配置し、他方の辺に第1の電荷蓄積部及び電荷転送調節部を配置し、センシング部21において残りの一辺に第2の電荷蓄積部が配設されている。
図7の例では、センシング部21において相対向する2辺に第2の電荷蓄積部を配設させた。即ち、図2との比較において、センシング部21の下側辺に沿って第2のフローティングゲート電極FG2、第3のリセットゲート電極RG3、及び第2のn+領域が形成されている。
第2のフローティングゲート電極FG2は、図5に示したソースフォロワー回路若しくは図6に示した測定装置へ接続される。
図8の例では、矩形のセンシング部21において隣り合う辺の一方側に電荷供給部及び電荷供給調節部を配置し、他方の辺に第1の電荷蓄積部及び電荷転送調節部を配置し、センシング部21において残りの隣り合う2辺に第2の電荷蓄積部が配設されている。
これにより、第2の電荷蓄積部の容積が大きくなり、より多くのホールを蓄積可能となる。これにより、大きなダイナミックレンジを確保できる。また、図7の例に比べて図8の例では、フローティングゲートが1本に集約されるので、構成が簡素化され、小型を達成できる。
Claims (7)
- 化学・物理現象に対応してポテンシャルが変化する第1のセンシング部と、
前記第1のセンシング部へ第1の電荷を供給する第1の電荷供給部と、
前記第1のセンシング部と第1の前記電荷供給部との間に形成される第1の電荷供給調節部と、
前記第1のセンシング部から転送された第1の電荷を蓄積する第1の電荷蓄積部と、
前記第1のセンシング部と前記第1の電荷蓄積部との間に形成される第1の電荷転送調節部とを備えてなる、化学・物理現象検出系と、
前記第1のセンシング部は光その他のエネルギー線を受けて前記第1の電荷と第2の電荷とを生成する半導体電荷生成部を備え、
該半導体電荷生成部と、
該半導体電荷生成部で生成された第2の電荷を蓄積する第2の電荷蓄積部であって、前記第1のセンシング部を基準にして前記第1の電荷蓄積部とは反対側の電位を有する第2の電荷蓄積部と、を備えてなるエネルギー線検出系と、
を具備する複合検出装置。 - 前記第1の電荷は電子であり、前記第2の電荷はホールである、ことを特徴とする請求項1に記載の複合検出装置。
- 前記半導体電荷生成部では半導体基板表面に該基板と異なる導電形の埋め込みチャネル層が形成されている、ことを特徴とする請求項1又は2に記載の複合検出装置。
- 前記第1の電荷供給部と前記第1の電荷蓄積部とは前記第1のセンシング部の対向する2辺に形成され、前記第2の電荷蓄積部は前記第1のセンシング部において残りの辺に形成される、ことを特徴とする請求項1~3のいずれかに記載の複合検出装置。
- 前記第1の電荷供給部と前記第1の電荷蓄積部とは前記前記センシング部において隣り合う2辺に形成され、前記第2の電荷蓄積部は前記センシング部において残りの辺に形成される、ことを特徴とする請求項1~3のいずれかに記載の複合検出装置。
- 前記第2の電荷蓄積部には絶縁膜を介して出力ゲートが積層され、前記第2の電荷蓄積部に蓄積された前記第2の電荷に対応したキャパシタンスカップリングとして前記出力ゲートに生成された第1の電荷を読み出す手段が更に備えられている、ことを特徴とする請求項1~5のいずれかに記載の複合検出装置。
- 前記第2の電荷蓄積部の電位に基づきポテンシャルが変化する第2のセンシング部と、
前記第2のセンシング部へ第1又は第2の電荷を供給する第2の電荷供給部と、
前記第2のセンシング部と前記第2の電荷供給部との間に形成される第2の電荷供給調節部と、
前記第2のセンシング部から転送され前記第1又は第2の電荷を蓄積する第3の電荷蓄積部と、
前記第2のセンシング部と前記第3の電荷蓄積部との間に形成される第2の電荷転送調節部とを備え、
前記第2の電荷供給部から前記第2のセンシング部へ電荷を供給するタイミングは前記第1の電荷供給部から前記第1のセンシング部へ電荷を供給するタイミングと同期しており、前記第2のセンシング部から前記第3の電荷蓄積部へ電荷を転送するタイミングは前記第1のセンシング部から前記第1の電荷蓄積部へ電荷を転送するタイミングと同期している、ことを特長とする請求項1~5のいずれかに記載の複合検出装置。
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EP2224230A4 (en) | 2015-03-04 |
EP2224230A1 (en) | 2010-09-01 |
JPWO2009081890A1 (ja) | 2011-05-06 |
US20110236263A1 (en) | 2011-09-29 |
EP2224230B1 (en) | 2019-03-20 |
US8388893B2 (en) | 2013-03-05 |
KR101491532B1 (ko) | 2015-02-09 |
JP5273742B2 (ja) | 2013-08-28 |
KR20100100901A (ko) | 2010-09-15 |
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