JP5518667B2 - 距離センサ及び距離画像センサ - Google Patents
距離センサ及び距離画像センサ Download PDFInfo
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- JP5518667B2 JP5518667B2 JP2010229900A JP2010229900A JP5518667B2 JP 5518667 B2 JP5518667 B2 JP 5518667B2 JP 2010229900 A JP2010229900 A JP 2010229900A JP 2010229900 A JP2010229900 A JP 2010229900A JP 5518667 B2 JP5518667 B2 JP 5518667B2
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- 239000004065 semiconductor Substances 0.000 claims description 137
- 239000000758 substrate Substances 0.000 claims description 29
- 238000012546 transfer Methods 0.000 claims description 23
- 239000012535 impurity Substances 0.000 claims description 15
- 230000004044 response Effects 0.000 claims description 5
- 238000003384 imaging method Methods 0.000 claims description 4
- 238000001514 detection method Methods 0.000 description 38
- 238000010586 diagram Methods 0.000 description 14
- 230000035945 sensitivity Effects 0.000 description 12
- 230000005684 electric field Effects 0.000 description 9
- 238000009825 accumulation Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 238000004364 calculation method Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000002366 time-of-flight method Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C3/00—Measuring distances in line of sight; Optical rangefinders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C3/00—Measuring distances in line of sight; Optical rangefinders
- G01C3/02—Details
- G01C3/06—Use of electric means to obtain final indication
- G01C3/08—Use of electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Remote Sensing (AREA)
- Radar, Positioning & Navigation (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Radar Systems And Details Thereof (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Optical Distance (AREA)
Description
ΔV=Q/Cfd
信号電荷収集領域の面積が増加すると、信号電荷収集領域の静電容量も増加し、発生する電圧変化が小さくなる。すなわち、電荷電圧変換ゲインが低くなる。このため、距離センサの感度が低下することとなる。
・パルス駆動信号SP:
V(t)=1(但し、0<t<(T/2)の場合)
V(t)=0(但し、(T/2)<t<Tの場合)
V(t+T)=V(t)
・検出用ゲート信号S1:
V(t)=1(但し、0<t<(T/2)の場合)
V(t)=0(但し、(T/2)<t<Tの場合)
V(t+T)=V(t)
・検出用ゲート信号S2(=S1の反転):
V(t)=0(但し、0<t<(T/2)の場合)
V(t)=1(但し、(T/2)<t<Tの場合)
V(t+T)=V(t)
・半導体基板1Aの第1領域1Aa:厚さ5〜700μm/不純物濃度1×1018〜1020cm−3
・半導体基板1Aの第2領域1Ab:厚さ3〜30μm/不純物濃度1×1013〜1016cm−3
・第1及び第2半導体領域FD1,FD2:厚さ0.1〜0.4μm/不純物濃度1×1018〜1020cm−3
・第3半導体領域SR1:厚さ1〜5μm/不純物濃度1×1016〜1018cm−3
ΔV=Q1/Cfd
ΔV=Q2/Cfd
したがって、第1及び第2半導体領域FD1,FD2の面積が低減されると、第1及び第2半導体領域FD1,FD2の静電容量(Cfd)も低減され、発生する電圧変化(ΔV)が大きくなる。すなわち、電荷電圧変換ゲインが高くなる。このことからも、距離画像センサ1の高感度化を図ることができる。
Claims (2)
- 入射光に応じて電荷を発生し、且つその平面形状が互いに対向する第1及び第2長辺と互いに対向する第1及び第2短辺とを有する長方形状である電荷発生領域と、
前記第1及び第2長辺の対向方向で前記電荷発生領域を挟んで対向して配置され、前記電荷発生領域からの信号電荷を収集する少なくとも一対の信号電荷収集領域と、
前記信号電荷収集領域と前記電荷発生領域との間にそれぞれ配置され、異なる位相の電荷転送信号が与えられる転送電極と、
前記第1及び第2短辺の対向方向で前記電荷発生領域を挟んで対向して配置され、前記電荷発生領域の前記第1及び第2短辺側でのポテンシャルを前記電荷発生領域における前記少なくとも一対の信号電荷収集領域の間に位置する領域でのポテンシャルよりも高めるポテンシャル調整手段と、を備え、
前記ポテンシャル調整手段は、前記電荷発生領域と同じ導電型であり、前記電荷発生領域よりも不純物濃度が高い半導体領域であることを特徴とする距離センサ。 - 一次元状又は二次元状に配置された複数のユニットからなる撮像領域を半導体基板上に備え、前記ユニットから出力される電荷量に基づいて、距離画像を得る距離画像センサにおいて、
1つの前記ユニットは、請求項1に記載の距離センサであることを特徴とする距離画像センサ。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010229900A JP5518667B2 (ja) | 2010-10-12 | 2010-10-12 | 距離センサ及び距離画像センサ |
PCT/JP2011/063844 WO2012049884A1 (ja) | 2010-10-12 | 2011-06-16 | 距離センサ及び距離画像センサ |
US13/813,752 US8976338B2 (en) | 2010-10-12 | 2011-06-16 | Range sensor and range image sensor |
KR1020127032950A KR102052753B1 (ko) | 2010-10-12 | 2011-06-16 | 거리 센서 및 거리 화상 센서 |
KR1020187013212A KR20180054895A (ko) | 2010-10-12 | 2011-06-16 | 거리 센서 및 거리 화상 센서 |
CN201180049537.1A CN103155150B (zh) | 2010-10-12 | 2011-06-16 | 距离传感器以及距离图像传感器 |
EP11832326.0A EP2629330B1 (en) | 2010-10-12 | 2011-06-16 | Range sensor and range image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010229900A JP5518667B2 (ja) | 2010-10-12 | 2010-10-12 | 距離センサ及び距離画像センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012084697A JP2012084697A (ja) | 2012-04-26 |
JP5518667B2 true JP5518667B2 (ja) | 2014-06-11 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010229900A Active JP5518667B2 (ja) | 2010-10-12 | 2010-10-12 | 距離センサ及び距離画像センサ |
Country Status (6)
Country | Link |
---|---|
US (1) | US8976338B2 (ja) |
EP (1) | EP2629330B1 (ja) |
JP (1) | JP5518667B2 (ja) |
KR (2) | KR20180054895A (ja) |
CN (1) | CN103155150B (ja) |
WO (1) | WO2012049884A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6315679B2 (ja) | 2014-04-18 | 2018-04-25 | 浜松ホトニクス株式会社 | 距離画像センサ |
JP6386777B2 (ja) | 2014-05-08 | 2018-09-05 | 浜松ホトニクス株式会社 | 距離画像センサ |
JP6231940B2 (ja) * | 2014-05-08 | 2017-11-15 | 浜松ホトニクス株式会社 | 測距装置及び測距装置の駆動方法 |
JP6386798B2 (ja) * | 2014-06-09 | 2018-09-05 | 浜松ホトニクス株式会社 | 測距装置 |
JP6554310B2 (ja) * | 2015-04-28 | 2019-07-31 | 浜松ホトニクス株式会社 | 距離測定装置 |
JP6659448B2 (ja) | 2016-05-02 | 2020-03-04 | 浜松ホトニクス株式会社 | 距離センサ及び距離センサの駆動方法 |
JP6659447B2 (ja) * | 2016-05-02 | 2020-03-04 | 浜松ホトニクス株式会社 | 距離センサ |
US10260941B2 (en) * | 2016-10-04 | 2019-04-16 | Precitec Optronik Gmbh | Chromatic confocal distance sensor |
JP6814053B2 (ja) * | 2017-01-19 | 2021-01-13 | 株式会社日立エルジーデータストレージ | 物体位置検出装置 |
CN110612430B (zh) * | 2018-04-16 | 2021-11-19 | 深圳市汇顶科技股份有限公司 | 影像传感系统及电子装置 |
CN109171616A (zh) * | 2018-08-07 | 2019-01-11 | 重庆金山医疗器械有限公司 | 获得被测物内部3d形状的系统及方法 |
CN110221273B (zh) * | 2019-05-09 | 2021-07-06 | 奥比中光科技集团股份有限公司 | 时间飞行深度相机及单频调制解调的距离测量方法 |
CN111987112B (zh) * | 2019-05-22 | 2024-07-05 | 群创光电股份有限公司 | 放射线感测装置 |
JP2021193696A (ja) * | 2020-06-07 | 2021-12-23 | ソニーセミコンダクタソリューションズ株式会社 | センサ装置 |
Family Cites Families (8)
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US7352454B2 (en) * | 2000-11-09 | 2008-04-01 | Canesta, Inc. | Methods and devices for improved charge management for three-dimensional and color sensing |
US7781811B2 (en) * | 2005-08-30 | 2010-08-24 | National University Corporation Shizuoka University | Semiconductor range-finding element and solid-state imaging device |
JP2007119626A (ja) | 2005-10-28 | 2007-05-17 | Masamitsu Nagahama | 熱硬化性樹脂製品、熱硬化性樹脂製品の製造方法、粒状物の使用 |
WO2007119626A1 (ja) * | 2006-03-31 | 2007-10-25 | National University Corporation Shizuoka University | 半導体測距素子及び固体撮像装置 |
KR101030263B1 (ko) * | 2006-11-30 | 2011-04-22 | 고쿠리츠 다이가꾸 호우진 시즈오까 다이가꾸 | 반도체 거리 측정 소자 및 고체 촬상 장치 |
KR101448152B1 (ko) * | 2008-03-26 | 2014-10-07 | 삼성전자주식회사 | 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서 |
JP5243100B2 (ja) | 2008-05-12 | 2013-07-24 | ブレインビジョン株式会社 | 固体撮像素子の画素構造 |
JP5585903B2 (ja) * | 2008-07-30 | 2014-09-10 | 国立大学法人静岡大学 | 距離画像センサ、及び撮像信号を飛行時間法により生成する方法 |
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2010
- 2010-10-12 JP JP2010229900A patent/JP5518667B2/ja active Active
-
2011
- 2011-06-16 KR KR1020187013212A patent/KR20180054895A/ko not_active Application Discontinuation
- 2011-06-16 KR KR1020127032950A patent/KR102052753B1/ko active IP Right Grant
- 2011-06-16 EP EP11832326.0A patent/EP2629330B1/en active Active
- 2011-06-16 US US13/813,752 patent/US8976338B2/en active Active
- 2011-06-16 WO PCT/JP2011/063844 patent/WO2012049884A1/ja active Application Filing
- 2011-06-16 CN CN201180049537.1A patent/CN103155150B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
WO2012049884A1 (ja) | 2012-04-19 |
JP2012084697A (ja) | 2012-04-26 |
KR20180054895A (ko) | 2018-05-24 |
US8976338B2 (en) | 2015-03-10 |
CN103155150B (zh) | 2016-01-20 |
EP2629330A1 (en) | 2013-08-21 |
EP2629330B1 (en) | 2018-02-28 |
KR102052753B1 (ko) | 2019-12-05 |
KR20130121691A (ko) | 2013-11-06 |
EP2629330A4 (en) | 2014-07-23 |
US20130128259A1 (en) | 2013-05-23 |
CN103155150A (zh) | 2013-06-12 |
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