JP6280002B2 - 測距方法及び測距装置 - Google Patents
測距方法及び測距装置 Download PDFInfo
- Publication number
- JP6280002B2 JP6280002B2 JP2014169166A JP2014169166A JP6280002B2 JP 6280002 B2 JP6280002 B2 JP 6280002B2 JP 2014169166 A JP2014169166 A JP 2014169166A JP 2014169166 A JP2014169166 A JP 2014169166A JP 6280002 B2 JP6280002 B2 JP 6280002B2
- Authority
- JP
- Japan
- Prior art keywords
- period
- charge
- distance
- region
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 33
- 238000012546 transfer Methods 0.000 claims description 109
- 238000009825 accumulation Methods 0.000 claims description 73
- 238000005259 measurement Methods 0.000 claims description 36
- 230000006641 stabilisation Effects 0.000 claims description 26
- 238000011105 stabilization Methods 0.000 claims description 26
- 230000004044 response Effects 0.000 claims description 9
- 230000010363 phase shift Effects 0.000 claims description 3
- 230000003111 delayed effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 40
- 239000000758 substrate Substances 0.000 description 23
- 238000004364 calculation method Methods 0.000 description 20
- 230000000630 rising effect Effects 0.000 description 19
- 238000010586 diagram Methods 0.000 description 11
- 239000012535 impurity Substances 0.000 description 11
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 230000007423 decrease Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C3/00—Measuring distances in line of sight; Optical rangefinders
- G01C3/02—Details
- G01C3/06—Use of electric means to obtain final indication
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/32—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
- G01S17/36—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated with phase comparison between the received signal and the contemporaneously transmitted signal
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
- G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/491—Details of non-pulse systems
- G01S7/4912—Receivers
- G01S7/4913—Circuits for detection, sampling, integration or read-out
- G01S7/4914—Circuits for detection, sampling, integration or read-out of detector arrays, e.g. charge-transfer gates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/491—Details of non-pulse systems
- G01S7/4912—Receivers
- G01S7/4915—Time delay measurement, e.g. operational details for pixel components; Phase measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1133—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a conductor-insulator-semiconductor diode or a CCD device
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/745—Circuitry for generating timing or clock signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Remote Sensing (AREA)
- Radar, Positioning & Navigation (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Optical Radar Systems And Details Thereof (AREA)
- Measurement Of Optical Distance (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
第一半導体領域3:厚さ10〜1000μm/不純物濃度1×1012〜1019cm−3
第二半導体領域5:厚さ1〜50μm/不純物濃度1×1012〜1015cm−3
第一及び第二電荷蓄積領域FD1,FD2:厚さ0.1〜1μm/不純物濃度1×1018〜1020cm−3
距離d=(c/2)×(Tp×Q2/(Q1+Q2))・・・(1)
Claims (4)
- 対象物に向けてパルス光を出射する光源と、前記対象物での前記パルス光の反射光の入射に応じて電荷が発生する電荷発生領域と前記電荷発生領域で発生した電荷を蓄積する電荷蓄積領域とを有する距離センサと、を用いた測距方法であって、
前記電荷発生領域に発生した電荷を、前記パルス光の出射期間に対する第一期間において前記電荷蓄積領域に送ることにより、前記第一期間にわたり前記電荷蓄積領域に蓄積し、
前記電荷発生領域に発生した電荷を、前記第一期間とタイミングが異なり、かつ、前記第一期間と同じ幅である第二期間において前記電荷蓄積領域に送ることにより、前記第二期間にわたり前記電荷蓄積領域に蓄積し、
前記第一期間にわたり前記電荷蓄積領域に蓄積された電荷量と、前記第二期間にわたり前記電荷蓄積領域に蓄積された電荷量と、に基づいて前記対象物までの距離を演算し、
前記光源から前記パルス光を出射する際に、前記光源から前記パルス光の出射期間における光強度安定期間が前記第一及び第二期間それぞれよりも長くされたパルス光を出射し、
前記光源から前記パルス光を出射する際に、前記第一期間の開始タイミングに遅延して前記パルス光を出射し、
前記第一期間の開始タイミングに対する前記パルス光の出射タイミングの遅延時間は、実際の距離と前記距離センサにより求めた距離との相関関係を示す測距プロファイルのリニアリティ領域の下限値に対応する時間に設定される、測距方法。 - 前記距離センサは、複数の前記電荷蓄積領域と、前記電荷発生領域で発生した電荷を複数の前記電荷蓄積領域に送る複数の転送電極と、を有し、
複数の前記転送電極には、異なる位相の転送信号がそれぞれ与えられる、請求項1に記載の測距方法。 - 前記距離センサは、前記電荷発生領域で発生した電荷を前記電荷蓄積領域に送る転送電極を有し、
前記転送電極には、所定のタイミングで間欠的に位相シフトが与えられた転送信号が与えられる、請求項1又は2に記載の測距方法。 - 対象物に向けてパルス光を出射する光源と、前記対象物での前記パルス光の反射光の入射に応じて電荷が発生する電荷発生領域と前記電荷発生領域で発生した電荷を蓄積する電荷蓄積領域とを有する距離センサと、を備える測距装置であって、
前記電荷発生領域に発生した電荷を、前記パルス光の出射期間に対する第一期間において前記電荷蓄積領域に送ることにより、前記第一期間にわたり前記電荷蓄積領域に蓄積させ、前記電荷発生領域に発生した電荷を、前記第一期間とタイミングが異なり、かつ、前記第一期間と同じ幅である第二期間において前記電荷蓄積領域に送ることにより、前記第二期間にわたり前記電荷蓄積領域に蓄積させる電荷転送部と、
前記第一期間にわたり前記電荷蓄積領域に蓄積された電荷量と、前記第二期間にわたり前記電荷蓄積領域に蓄積された電荷量と、に基づいて前記対象物までの距離を演算する距離演算部と、
前記パルス光の出射期間における光強度安定期間が前記第一及び第二期間それぞれよりも長くされたパルス光を出射するように前記光源を駆動する光源駆動部と、を備え、
前記パルス光は、前記第一期間の開始タイミングに遅延して前記光源から出射され、
前記第一期間の開始タイミングに対する前記パルス光の出射タイミングの遅延時間は、実際の距離と前記距離センサにより求めた距離との相関関係を示す測距プロファイルのリニアリティ領域の下限値に対応する時間に設定されている、測距装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014169166A JP6280002B2 (ja) | 2014-08-22 | 2014-08-22 | 測距方法及び測距装置 |
CH00142/17A CH711639B1 (de) | 2014-08-22 | 2015-08-04 | Abstandsmessverfahren und Abstandsmessvorrichtung. |
DE112015003846.9T DE112015003846T5 (de) | 2014-08-22 | 2015-08-04 | Abstandsmessverfahren und Abstandsmessvorrichtung |
PCT/JP2015/072048 WO2016027656A1 (ja) | 2014-08-22 | 2015-08-04 | 測距方法及び測距装置 |
KR1020177007251A KR102350761B1 (ko) | 2014-08-22 | 2015-08-04 | 측거 방법 및 측거 장치 |
US15/502,031 US10684371B2 (en) | 2014-08-22 | 2015-08-04 | Ranging method and ranging device |
CN201580044913.6A CN106574974B (zh) | 2014-08-22 | 2015-08-04 | 测距方法以及测距装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014169166A JP6280002B2 (ja) | 2014-08-22 | 2014-08-22 | 測距方法及び測距装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016045066A JP2016045066A (ja) | 2016-04-04 |
JP6280002B2 true JP6280002B2 (ja) | 2018-02-14 |
Family
ID=55350602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014169166A Active JP6280002B2 (ja) | 2014-08-22 | 2014-08-22 | 測距方法及び測距装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10684371B2 (ja) |
JP (1) | JP6280002B2 (ja) |
KR (1) | KR102350761B1 (ja) |
CN (1) | CN106574974B (ja) |
CH (1) | CH711639B1 (ja) |
DE (1) | DE112015003846T5 (ja) |
WO (1) | WO2016027656A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3232224B1 (de) * | 2016-04-12 | 2018-06-13 | Sick Ag | Entfernungsmessender optoelektronischer sensor und verfahren zur erfassung und abstandsbestimmung von objekten |
EP3819664A4 (en) * | 2018-07-02 | 2022-04-06 | Brookman Technology, Inc. | DISTANCE MEASURING DEVICE, CAMERA, INSPECTION ADJUSTMENT DEVICE, DRIVE ADJUSTMENT PROCEDURE FOR DISTANCE DETECTION DEVICE AND INSPECTION ADJUSTMENT PROCEDURE FOR DISTANCE DEVICE |
EP3839555A4 (en) * | 2018-10-16 | 2022-07-06 | Brookman Technology, Inc. | DISTANCE MEASURING DEVICE, CAMERA AND METHOD OF ADJUSTING THE DRIVE OF A DISTANCE MEASURING DEVICE |
CN111580117A (zh) * | 2019-02-19 | 2020-08-25 | 光宝电子(广州)有限公司 | 飞时测距感测系统的控制方法 |
CN110187355B (zh) * | 2019-05-21 | 2023-07-04 | 奥比中光科技集团股份有限公司 | 一种距离测量方法及深度相机 |
CN111025315B (zh) * | 2019-11-28 | 2021-11-19 | 奥比中光科技集团股份有限公司 | 一种深度测量系统及方法 |
JP2021099271A (ja) * | 2019-12-23 | 2021-07-01 | ソニーセミコンダクタソリューションズ株式会社 | 測距装置およびその制御方法、並びに、電子機器 |
CN114846355A (zh) * | 2020-01-17 | 2022-08-02 | 松下知识产权经营株式会社 | 测距装置 |
CN111580125B (zh) * | 2020-05-28 | 2022-09-09 | Oppo广东移动通信有限公司 | 飞行时间模组及其控制方法、电子设备 |
JP6953595B1 (ja) * | 2020-09-09 | 2021-10-27 | 浜松ホトニクス株式会社 | 距離画像取得装置及び距離画像取得方法 |
JP2022115580A (ja) * | 2021-01-28 | 2022-08-09 | 国立大学法人静岡大学 | 距離画像撮像装置及び距離画像を撮像する方法 |
JP2022133012A (ja) * | 2021-03-01 | 2022-09-13 | 浜松ホトニクス株式会社 | 距離画像取得装置および距離画像取得方法 |
JP2023037863A (ja) * | 2021-09-06 | 2023-03-16 | 凸版印刷株式会社 | 距離画像撮像装置及び距離画像撮像方法 |
JP2024030776A (ja) * | 2022-08-25 | 2024-03-07 | 浜松ホトニクス株式会社 | 距離計測装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4235729B2 (ja) * | 2003-02-03 | 2009-03-11 | 国立大学法人静岡大学 | 距離画像センサ |
JP4280822B2 (ja) | 2004-02-18 | 2009-06-17 | 国立大学法人静岡大学 | 光飛行時間型距離センサ |
JP2007121116A (ja) | 2005-10-28 | 2007-05-17 | Sharp Corp | 光学式測距装置 |
JP5171158B2 (ja) * | 2007-08-22 | 2013-03-27 | 浜松ホトニクス株式会社 | 固体撮像装置及び距離画像測定装置 |
DE102009037596B4 (de) * | 2009-08-14 | 2014-07-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Pixelstruktur, System und Verfahren zur optischen Abstandsmessung sowie Steuerschaltung für die Pixelstruktur |
JP5558999B2 (ja) * | 2009-11-24 | 2014-07-23 | 浜松ホトニクス株式会社 | 距離センサ及び距離画像センサ |
JP5675468B2 (ja) * | 2011-03-31 | 2015-02-25 | 本田技研工業株式会社 | 測距システム |
JP5576851B2 (ja) * | 2011-12-27 | 2014-08-20 | 本田技研工業株式会社 | 測距システム及び測距方法 |
JP6006514B2 (ja) * | 2012-03-27 | 2016-10-12 | 浜松ホトニクス株式会社 | 距離センサ及び距離画像センサ |
JP6384762B2 (ja) * | 2013-01-31 | 2018-09-05 | パナソニックIpマネジメント株式会社 | 測距方法および測距システム |
KR102003496B1 (ko) * | 2013-03-06 | 2019-10-01 | 삼성전자주식회사 | 이미지 센서 및 이미지 픽업 장치 |
EP2955539B1 (en) * | 2014-06-12 | 2018-08-08 | Delphi International Operations Luxembourg S.à r.l. | Distance measuring device |
-
2014
- 2014-08-22 JP JP2014169166A patent/JP6280002B2/ja active Active
-
2015
- 2015-08-04 DE DE112015003846.9T patent/DE112015003846T5/de active Pending
- 2015-08-04 US US15/502,031 patent/US10684371B2/en active Active
- 2015-08-04 KR KR1020177007251A patent/KR102350761B1/ko active IP Right Grant
- 2015-08-04 CH CH00142/17A patent/CH711639B1/de unknown
- 2015-08-04 WO PCT/JP2015/072048 patent/WO2016027656A1/ja active Application Filing
- 2015-08-04 CN CN201580044913.6A patent/CN106574974B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
DE112015003846T5 (de) | 2017-05-04 |
CN106574974A (zh) | 2017-04-19 |
US10684371B2 (en) | 2020-06-16 |
KR20170044154A (ko) | 2017-04-24 |
CN106574974B (zh) | 2019-06-18 |
JP2016045066A (ja) | 2016-04-04 |
KR102350761B1 (ko) | 2022-01-13 |
WO2016027656A1 (ja) | 2016-02-25 |
US20170234983A1 (en) | 2017-08-17 |
CH711639B1 (de) | 2018-05-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6280002B2 (ja) | 測距方法及び測距装置 | |
JP5518667B2 (ja) | 距離センサ及び距離画像センサ | |
US10228463B2 (en) | Distance-measurement device and method for powering distance-measurement device | |
JP6006514B2 (ja) | 距離センサ及び距離画像センサ | |
US11054522B2 (en) | Distance measuring device | |
JP5502694B2 (ja) | 距離センサ及び距離画像センサ | |
JP2012083213A (ja) | 距離センサ及び距離画像センサ | |
JP6010425B2 (ja) | 距離センサ及び距離画像センサ | |
JP2012083221A (ja) | 距離センサ及び距離画像センサ | |
JP2012083214A (ja) | 距離センサ及び距離画像センサ | |
JP5616170B2 (ja) | 距離センサ及び距離画像センサ | |
JP5932400B2 (ja) | 距離センサ及び距離画像センサ | |
JP2012083220A (ja) | 距離センサ及び距離画像センサ | |
JP2012185174A (ja) | 距離センサ及び距離画像センサ | |
JP2012083222A (ja) | 距離センサ及び距離画像センサ | |
JP2012083219A (ja) | 距離センサ及び距離画像センサ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170324 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171107 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171227 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180116 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180118 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6280002 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |