JP5620087B2 - 距離センサ及び距離画像センサ - Google Patents
距離センサ及び距離画像センサ Download PDFInfo
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- JP5620087B2 JP5620087B2 JP2009271825A JP2009271825A JP5620087B2 JP 5620087 B2 JP5620087 B2 JP 5620087B2 JP 2009271825 A JP2009271825 A JP 2009271825A JP 2009271825 A JP2009271825 A JP 2009271825A JP 5620087 B2 JP5620087 B2 JP 5620087B2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
- G01S7/4863—Detector arrays, e.g. charge-transfer gates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
Description
この場合、第1及び第2ゲート電極は第1及び第2半導体領域の周辺に位置することになるが、逆に、第1及び第2ゲート電極の周辺にも第1及び第2半導体領域が位置することとなる。第1及び第2ゲート電極は第1及び第2半導体領域を囲んでいるため、第1及び第2ゲート電極へ電荷を転送するための信号を与えることで、全方向からの電荷を第1及び第2半導体領域に転送することが可能となる。すなわち、第1及び第2ゲート電極の周辺領域を実質的に全て電荷発生領域として機能させることが可能となり、開口率が更に著しく改善する。したがって、信号量を増加させ、S/N比の良い距離画像を得ることができる。1つの距離センサに着目すると、第1及び第2ゲート電極の外側の全方向から内側の第1及び第2半導体領域に電荷を転送させることができるので、多くの電荷が収集でき、かかる電荷に基づいて距離を求めると、S/N比の良い距離出力を得ることができる。
・パルス駆動信号SP:
・V(t)=1(但し、0<t<(T/2)の場合)
・V(t)=0(但し、(T/2)<t<Tの場合)
・V(t+T)=V(t)
・検出用ゲート信号S1:
・V(t)=1(但し、0<t<(T/2)の場合)
・V(t)=0(但し、(T/2)<t<Tの場合)
・V(t+T)=V(t)
・検出用ゲート信号S2(=S1の反転):
・V(t)=0(但し、0<t<(T/2)の場合)
・V(t)=1(但し、(T/2)<t<Tの場合)
・V(t+T)=V(t)
・半導体基板1A:厚さ5〜100μm/不純物濃度1×1012〜1015cm−3
・第1及び第2半導体領域FD1,FD2:厚さ0.1〜0.4μm/不純物濃度1×1018〜1020cm−3
・第3半導体領域SR1:厚さ0.5〜5μm/不純物濃度1×1015〜1019cm−3
第1及び第2半導体領域FD1,FD2から拡がる空乏層DLは、フォトゲート電極PGから拡がる空乏層DLと同様に、光入射面1BKに向けて拡がる。このため、図11に示されるように、半導体基板1Aの厚み方向での光入射面1BK側から第1及び第2半導体領域FD1,FD2に向うポテンシャルの傾斜が形成されることとなり、発生した電荷が第1及び第2半導体領域FD1,FD2から拡がる空乏層DLに直接取り込まれてしまう。
Claims (4)
- 光入射面及び前記光入射面とは反対側の表面を有する半導体基板と、
前記表面上に設けられたフォトゲート電極と、
前記表面上において前記フォトゲート電極に隣接して設けられた第1及び第2ゲート電極と、
前記フォトゲート電極直下の領域から前記第1及び第2ゲート電極直下に流れ込む電荷をそれぞれ読み出すための第1及び第2半導体領域と、
前記第1及び第2半導体領域から前記光入射面側に前記半導体基板の厚み方向に離れて設けられ、前記第1及び第2半導体領域と逆の導電型である第3半導体領域と、を備え、
前記第3半導体領域は、前記第1及び第2半導体領域から拡がる空乏層の前記光入射面側へ向けた拡がりを抑えることを特徴とする距離センサ。 - 前記フォトゲート電極は、平面形状が互いに対向する第1辺及び第2辺を有し、
前記第1半導体領域は、前記フォトゲート電極の前記第1辺側に配置され、
前記第2半導体領域は、前記フォトゲート電極の前記第2辺側に配置され、
前記第1ゲート電極は、前記表面側から見て、前記フォトゲート電極と前記第1半導体領域との間に設けられ、
前記第2ゲート電極は、前記表面側から見て、前記フォトゲート電極と前記第2半導体領域との間に設けられていることを特徴とする請求項1に記載の距離センサ。 - 複数の前記第1半導体領域が、前記フォトゲート電極の前記第1辺に沿って配置され、
複数の前記第2半導体領域が、前記フォトゲート電極の前記第2辺に沿って配置されていることを特徴とする請求項2に記載の距離センサ。 - 一次元状又は二次元状に配置された複数のユニットからなる撮像領域を半導体基板上に備え、前記ユニットから出力される電荷量に基づいて、距離画像を得る距離画像センサにおいて、
1つの前記ユニットは、請求項1〜3のいずれか一項に記載の距離センサであることを特徴とする距離画像センサ。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009271825A JP5620087B2 (ja) | 2009-11-30 | 2009-11-30 | 距離センサ及び距離画像センサ |
PCT/JP2010/070564 WO2011065279A1 (ja) | 2009-11-30 | 2010-11-18 | 距離センサ及び距離画像センサ |
KR1020127007104A KR101679453B1 (ko) | 2009-11-30 | 2010-11-18 | 거리 센서 및 거리 화상 센서 |
US13/498,202 US8598674B2 (en) | 2009-11-30 | 2010-11-18 | Range sensor and range image sensor |
EP12175680.3A EP2533288B1 (en) | 2009-11-30 | 2010-11-18 | Range sensor and range image sensor |
EP10833125.7A EP2508916B1 (en) | 2009-11-30 | 2010-11-18 | Range sensor and range image sensor |
KR1020127017226A KR101679460B1 (ko) | 2009-11-30 | 2010-11-18 | 거리 센서 및 거리 화상 센서 |
US13/487,514 US8653619B2 (en) | 2009-11-30 | 2012-06-04 | Range sensor and range image sensor |
Applications Claiming Priority (1)
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JP2009271825A JP5620087B2 (ja) | 2009-11-30 | 2009-11-30 | 距離センサ及び距離画像センサ |
Related Child Applications (1)
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JP2012121858A Division JP5632423B2 (ja) | 2012-05-29 | 2012-05-29 | 距離センサ及び距離画像センサ |
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JP2011112614A JP2011112614A (ja) | 2011-06-09 |
JP5620087B2 true JP5620087B2 (ja) | 2014-11-05 |
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US (2) | US8598674B2 (ja) |
EP (2) | EP2508916B1 (ja) |
JP (1) | JP5620087B2 (ja) |
KR (2) | KR101679460B1 (ja) |
WO (1) | WO2011065279A1 (ja) |
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JP5616170B2 (ja) * | 2010-09-06 | 2014-10-29 | 浜松ホトニクス株式会社 | 距離センサ及び距離画像センサ |
JP6026755B2 (ja) * | 2012-02-28 | 2016-11-16 | 浜松ホトニクス株式会社 | 距離センサ及び距離画像センサ |
JP5932400B2 (ja) * | 2012-03-02 | 2016-06-08 | 浜松ホトニクス株式会社 | 距離センサ及び距離画像センサ |
JP6006514B2 (ja) * | 2012-03-27 | 2016-10-12 | 浜松ホトニクス株式会社 | 距離センサ及び距離画像センサ |
JP2012185174A (ja) * | 2012-05-29 | 2012-09-27 | Hamamatsu Photonics Kk | 距離センサ及び距離画像センサ |
JP5909421B2 (ja) | 2012-08-01 | 2016-04-26 | 浜松ホトニクス株式会社 | 複合センサ及び複合センサモジュール |
KR101403945B1 (ko) * | 2012-10-31 | 2014-07-01 | 한국 천문 연구원 | 레이저 추적 시스템의 광전자 제어 장치 |
EP2824418A1 (en) * | 2013-07-09 | 2015-01-14 | XenomatiX BVBA | Surround sensing system |
CN105393083B (zh) * | 2013-07-09 | 2018-07-13 | 齐诺马蒂赛股份有限公司 | 周围环境感测系统 |
JP6386777B2 (ja) * | 2014-05-08 | 2018-09-05 | 浜松ホトニクス株式会社 | 距離画像センサ |
DE102014111431A1 (de) | 2014-08-11 | 2016-02-11 | Infineon Technologies Ag | Flugzeitvorrichtungen und eine Beleuchtungsquelle |
WO2016128198A1 (de) * | 2015-02-09 | 2016-08-18 | Espros Photonics Ag | Tof entfernungssensor |
KR101684269B1 (ko) * | 2015-05-15 | 2016-12-20 | 한국과학기술원 | 프리러닝 펨토초 레이저 기반의 실시간 합성파 결정을 이용한 거리측정 장치 |
US9923003B2 (en) | 2015-06-30 | 2018-03-20 | Microsoft Technology Licensing, Llc | CMOS image sensor with a reduced likelihood of an induced electric field in the epitaxial layer |
US10389957B2 (en) * | 2016-12-20 | 2019-08-20 | Microsoft Technology Licensing, Llc | Readout voltage uncertainty compensation in time-of-flight imaging pixels |
US10616519B2 (en) | 2016-12-20 | 2020-04-07 | Microsoft Technology Licensing, Llc | Global shutter pixel structures with shared transfer gates |
KR20200039402A (ko) | 2018-10-05 | 2020-04-16 | 삼성전자주식회사 | 복조 대비 성능을 향상시키기 위한 픽셀 구조를 포함하는 이미지 센서 및 이미지 처리 시스템 |
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2009
- 2009-11-30 JP JP2009271825A patent/JP5620087B2/ja active Active
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2010
- 2010-11-18 KR KR1020127017226A patent/KR101679460B1/ko active IP Right Grant
- 2010-11-18 EP EP10833125.7A patent/EP2508916B1/en active Active
- 2010-11-18 KR KR1020127007104A patent/KR101679453B1/ko active IP Right Grant
- 2010-11-18 WO PCT/JP2010/070564 patent/WO2011065279A1/ja active Application Filing
- 2010-11-18 US US13/498,202 patent/US8598674B2/en active Active
- 2010-11-18 EP EP12175680.3A patent/EP2533288B1/en active Active
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Also Published As
Publication number | Publication date |
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KR101679453B1 (ko) | 2016-11-24 |
EP2533288A3 (en) | 2013-05-01 |
EP2508916A1 (en) | 2012-10-10 |
US8598674B2 (en) | 2013-12-03 |
KR101679460B1 (ko) | 2016-11-24 |
EP2533288A2 (en) | 2012-12-12 |
KR20120099115A (ko) | 2012-09-06 |
WO2011065279A1 (ja) | 2011-06-03 |
EP2508916B1 (en) | 2018-03-21 |
EP2508916A4 (en) | 2013-05-01 |
US8653619B2 (en) | 2014-02-18 |
EP2533288B1 (en) | 2018-05-30 |
US20120235272A1 (en) | 2012-09-20 |
KR20120109470A (ko) | 2012-10-08 |
JP2011112614A (ja) | 2011-06-09 |
US20120181650A1 (en) | 2012-07-19 |
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