CN102054839B - 一种mos场效应晶体管结构及其制备方法 - Google Patents
一种mos场效应晶体管结构及其制备方法 Download PDFInfo
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- CN102054839B CN102054839B CN200910197839.8A CN200910197839A CN102054839B CN 102054839 B CN102054839 B CN 102054839B CN 200910197839 A CN200910197839 A CN 200910197839A CN 102054839 B CN102054839 B CN 102054839B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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CN200910197839.8A CN102054839B (zh) | 2009-10-28 | 2009-10-28 | 一种mos场效应晶体管结构及其制备方法 |
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CN200910197839.8A CN102054839B (zh) | 2009-10-28 | 2009-10-28 | 一种mos场效应晶体管结构及其制备方法 |
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CN102054839A CN102054839A (zh) | 2011-05-11 |
CN102054839B true CN102054839B (zh) | 2014-12-31 |
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US20140264472A1 (en) * | 2013-03-15 | 2014-09-18 | Life Technologies Corporation | Chemical sensor with consistent sensor surface areas |
CN105593157B (zh) * | 2013-10-02 | 2018-03-20 | 卡文迪什动力有限公司 | 用于实现电介质与有机材料之间的良好粘附的方法 |
CN103700648B (zh) * | 2013-12-18 | 2016-09-07 | 无锡中微晶园电子有限公司 | 用于高温电路的金属互连结构及制备方法 |
CN105097776B (zh) * | 2014-04-29 | 2018-03-16 | 无锡华润上华科技有限公司 | 绝缘体上硅器件及其金属间介质层结构和制造方法 |
CN105097430B (zh) * | 2014-05-05 | 2019-06-28 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
CN106533406B (zh) * | 2016-11-10 | 2019-06-07 | 中国电子产品可靠性与环境试验研究所 | Mos管参数退化电路、测试电路及预警电路 |
CN109950204A (zh) * | 2019-04-10 | 2019-06-28 | 山东沂光集成电路有限公司 | 一种运行稳定的大电流mos管 |
CN113257779B (zh) * | 2021-07-08 | 2021-09-24 | 广东省大湾区集成电路与系统应用研究院 | 基于fdsoi的背偏压控制的芯片结构及其制造方法 |
CN114664732B (zh) * | 2022-05-25 | 2022-09-16 | 合肥晶合集成电路股份有限公司 | 一种半导体集成器件及其制作方法 |
CN117269712B (zh) * | 2023-11-22 | 2024-01-30 | 墨研计算科学(南京)有限公司 | 晶体管热载流子注入寿命的预估方法、装置、设备及介质 |
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US6774432B1 (en) * | 2003-02-05 | 2004-08-10 | Advanced Micro Devices, Inc. | UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL |
JP2005197602A (ja) * | 2004-01-09 | 2005-07-21 | Renesas Technology Corp | 半導体装置およびその製造方法 |
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Effective date of registration: 20120307 Address after: 214061 No. 5 Hanjiang Road, national hi tech Industrial Development Zone, Wuxi, Jiangsu, China Applicant after: Wuxi CSMC Semiconductor Co., Ltd. Address before: 214061 No. 5 Hanjiang Road, national hi tech Industrial Development Zone, Wuxi, Jiangsu, China Applicant before: Wuxi CSMC Semiconductor Co., Ltd. Co-applicant before: Wuxi Huarun Shanghua Technology Co., Ltd. |
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Effective date of registration: 20171113 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214061 No. 5 Hanjiang Road, national hi tech Industrial Development Zone, Wuxi, Jiangsu, China Patentee before: Wuxi CSMC Semiconductor Co., Ltd. |