CN102569083B - 具有高k金属栅极的金属氧化物半导体的形成方法 - Google Patents
具有高k金属栅极的金属氧化物半导体的形成方法 Download PDFInfo
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- CN102569083B CN102569083B CN201010604745.0A CN201010604745A CN102569083B CN 102569083 B CN102569083 B CN 102569083B CN 201010604745 A CN201010604745 A CN 201010604745A CN 102569083 B CN102569083 B CN 102569083B
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- metal
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- electrode layer
- dielectric layer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 52
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 49
- 239000002184 metal Substances 0.000 title claims abstract description 49
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 32
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 32
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052700 potassium Inorganic materials 0.000 title abstract 2
- 239000011591 potassium Substances 0.000 title abstract 2
- 239000010410 layer Substances 0.000 claims abstract description 220
- 239000011229 interlayer Substances 0.000 claims abstract description 50
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000002513 implantation Methods 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 40
- 230000015572 biosynthetic process Effects 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 21
- 239000000377 silicon dioxide Substances 0.000 claims description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- 239000000428 dust Substances 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- -1 nitrogen ions Chemical class 0.000 abstract description 28
- 238000000227 grinding Methods 0.000 abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000003795 chemical substances by application Substances 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000802 nitrating effect Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010604745.0A CN102569083B (zh) | 2010-12-23 | 2010-12-23 | 具有高k金属栅极的金属氧化物半导体的形成方法 |
US13/178,455 US8313991B2 (en) | 2010-12-23 | 2011-07-07 | Method for fabricating a high-K metal gate MOS |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010604745.0A CN102569083B (zh) | 2010-12-23 | 2010-12-23 | 具有高k金属栅极的金属氧化物半导体的形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102569083A CN102569083A (zh) | 2012-07-11 |
CN102569083B true CN102569083B (zh) | 2014-12-24 |
Family
ID=46317708
Family Applications (1)
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CN201010604745.0A Active CN102569083B (zh) | 2010-12-23 | 2010-12-23 | 具有高k金属栅极的金属氧化物半导体的形成方法 |
Country Status (2)
Country | Link |
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US (1) | US8313991B2 (zh) |
CN (1) | CN102569083B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8846513B2 (en) * | 2011-09-23 | 2014-09-30 | Globalfoundries Inc. | Semiconductor device comprising replacement gate electrode structures and self-aligned contact elements formed by a late contact fill |
CN103715134B (zh) * | 2012-09-29 | 2016-05-25 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
CN104681428A (zh) * | 2013-11-26 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | 晶体管结构及其形成方法 |
CN104716035A (zh) * | 2013-12-12 | 2015-06-17 | 中芯国际集成电路制造(上海)有限公司 | 化学机械抛光的方法 |
US10541128B2 (en) | 2016-08-19 | 2020-01-21 | International Business Machines Corporation | Method for making VFET devices with ILD protection |
CN110729185B (zh) * | 2018-07-16 | 2022-07-12 | 中芯国际集成电路制造(上海)有限公司 | 平坦化工艺方法 |
CN111785687B (zh) * | 2019-04-03 | 2024-01-26 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的形成方法及半导体器件 |
CN113539826A (zh) * | 2020-04-17 | 2021-10-22 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1431689A (zh) * | 2002-01-11 | 2003-07-23 | 矽统科技股份有限公司 | 抗光阻去除液侵蚀的氧化膜形成方法 |
CN1450600A (zh) * | 2002-04-10 | 2003-10-22 | 台湾积体电路制造股份有限公司 | 制作双栅极结构的方法 |
US6713385B1 (en) * | 2002-10-31 | 2004-03-30 | Intel Corporation | Implanting ions in shallow trench isolation structures |
US7183184B2 (en) * | 2003-12-29 | 2007-02-27 | Intel Corporation | Method for making a semiconductor device that includes a metal gate electrode |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5674784A (en) * | 1996-10-02 | 1997-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming polish stop layer for CMP process |
US6251763B1 (en) * | 1997-06-30 | 2001-06-26 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing same |
US6087208A (en) * | 1998-03-31 | 2000-07-11 | Advanced Micro Devices, Inc. | Method for increasing gate capacitance by using both high and low dielectric gate material |
JP2002198441A (ja) * | 2000-11-16 | 2002-07-12 | Hynix Semiconductor Inc | 半導体素子のデュアル金属ゲート形成方法 |
US6365450B1 (en) * | 2001-03-15 | 2002-04-02 | Advanced Micro Devices, Inc. | Fabrication of P-channel field effect transistor with minimized degradation of metal oxide gate |
JP2003037264A (ja) * | 2001-07-24 | 2003-02-07 | Toshiba Corp | 半導体装置およびその製造方法 |
US6541351B1 (en) * | 2001-11-20 | 2003-04-01 | International Business Machines Corporation | Method for limiting divot formation in post shallow trench isolation processes |
JP5209196B2 (ja) * | 2005-11-07 | 2013-06-12 | 三星電子株式会社 | 半導体装置の製造方法 |
KR100795363B1 (ko) * | 2006-11-24 | 2008-01-17 | 삼성전자주식회사 | 반도체 소자의 도전성 배선 및 이의 형성방법과 이를구비하는 플래시 메모리 장치 및 이의 제조 방법 |
JP2008210893A (ja) * | 2007-02-23 | 2008-09-11 | Fujitsu Ltd | 半導体装置とその製造方法 |
US8067806B2 (en) * | 2009-09-11 | 2011-11-29 | United Microelectronics Corp. | Gate structures of CMOS device and method for manufacturing the same |
-
2010
- 2010-12-23 CN CN201010604745.0A patent/CN102569083B/zh active Active
-
2011
- 2011-07-07 US US13/178,455 patent/US8313991B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1431689A (zh) * | 2002-01-11 | 2003-07-23 | 矽统科技股份有限公司 | 抗光阻去除液侵蚀的氧化膜形成方法 |
CN1450600A (zh) * | 2002-04-10 | 2003-10-22 | 台湾积体电路制造股份有限公司 | 制作双栅极结构的方法 |
US6713385B1 (en) * | 2002-10-31 | 2004-03-30 | Intel Corporation | Implanting ions in shallow trench isolation structures |
US7183184B2 (en) * | 2003-12-29 | 2007-02-27 | Intel Corporation | Method for making a semiconductor device that includes a metal gate electrode |
Also Published As
Publication number | Publication date |
---|---|
CN102569083A (zh) | 2012-07-11 |
US20120164824A1 (en) | 2012-06-28 |
US8313991B2 (en) | 2012-11-20 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20121115 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121115 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant |