JP5110783B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5110783B2 JP5110783B2 JP2005249333A JP2005249333A JP5110783B2 JP 5110783 B2 JP5110783 B2 JP 5110783B2 JP 2005249333 A JP2005249333 A JP 2005249333A JP 2005249333 A JP2005249333 A JP 2005249333A JP 5110783 B2 JP5110783 B2 JP 5110783B2
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- silicon oxynitride
- film
- oxynitride film
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- insulating film
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- 239000004065 semiconductor Substances 0.000 title claims description 52
- 229910052710 silicon Inorganic materials 0.000 claims description 83
- 239000010703 silicon Substances 0.000 claims description 83
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 82
- 239000011229 interlayer Substances 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 27
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 16
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 16
- 125000004429 atom Chemical group 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 7
- 229910018557 Si O Inorganic materials 0.000 claims description 4
- 229910007991 Si-N Inorganic materials 0.000 claims description 4
- 229910006294 Si—N Inorganic materials 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 47
- 229910052739 hydrogen Inorganic materials 0.000 description 30
- 239000001257 hydrogen Substances 0.000 description 27
- -1 hydrogen ions Chemical class 0.000 description 22
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 230000006870 function Effects 0.000 description 10
- 230000006866 deterioration Effects 0.000 description 9
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000005040 ion trap Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- DYCJFJRCWPVDHY-LSCFUAHRSA-N NBMPR Chemical compound O[C@@H]1[C@H](O)[C@@H](CO)O[C@H]1N1C2=NC=NC(SCC=3C=CC(=CC=3)[N+]([O-])=O)=C2N=C1 DYCJFJRCWPVDHY-LSCFUAHRSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76837—Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Chemical Vapour Deposition (AREA)
Description
本実施例で製造した半導体装置の構造を図1および図5に示す。図1は、本発明を把握しやすいように、また、図2および図3に示す半導体装置と比較しやすいように、図5に示す構成要素のうち基本的なもののみを示す。
実施例1では、図1に示すように、シリコン酸窒化膜6を金属配線4の直下に形成した。これに対して、本実施例では、図2に示すように、シリコン酸窒化膜26をゲート電極21のエッチストッパ膜27の直上に形成した。すなわち、本実施例では、ゲート電極21を形成した半導体基板22上に、エッチストッパ膜27と、シリコン酸窒化膜26と、コンタクト層23と、金属配線24と、層間絶縁膜25とを形成し、このように層構成の順序が相違する以外は、実施例1と同様にして半導体装置を製造した。
実施例1では、図1に示すように、シリコン酸窒化膜6を金属配線4の直下に形成した。これに対して、本実施例では、図3に示すように、シリコン酸窒化膜36をコンタクト層33a、33b内に形成した。すなわち、本実施例では、ゲート電極31を形成した半導体基板32上に、エッチストッパ膜37と、コンタクト層33bと、シリコン酸窒化膜36と、コンタクト層33aと、金属配線34と、層間絶縁膜35とを形成し、このように層構成の順序が相違する以外は、実施例1と同様にして半導体装置を製造した。
Claims (11)
- 半導体基板と、
前記半導体基板の主面に形成されたゲート電極と、
前記半導体基板の主面および前記ゲート電極を覆うように形成された第1の層間絶縁膜と、
前記第1の層間絶縁膜上に形成されたシリコン酸窒化膜と、
前記シリコン酸窒化膜上に形成された金属配線と、
前記シリコン酸窒化膜および前記金属配線上に形成された、前記第1の層間絶縁膜とは異なる第2の層間絶縁膜と、
を有し、
前記第2の層間絶縁膜は、水素原子を含む原料ガスを用いて、バイアス印加したプラズマCVDにより形成された絶縁膜であり、
前記第1の層間絶縁膜は、バイアス印加を行うことなく形成された絶縁膜であることを特徴とする半導体装置。 - 前記シリコン酸窒化膜は、プラズマCVDにより形成した請求項1に記載の半導体装置。
- 前記シリコン酸窒化膜は、N2OまたはO2のいずれか一方と、SiH4とを含む原料ガ
スにより形成した請求項2に記載の半導体装置。 - 前記シリコン酸窒化膜は、Siが34原子数%〜40原子数%、Oが48原子数%〜60原子数%、Nが5原子数%〜12原子数%である請求項3に記載の半導体装置。
- 前記シリコン酸窒化膜は、450℃以上で熱処理をした請求項1に記載の半導体装置。
- 前記シリコン酸窒化膜は、Si−H結合のHがFT−IR法で8×1021原子数/cm3以下である請求項1に記載の半導体装置。
- 前記シリコン酸窒化膜は、N、B、PまたはAsを注入した請求項1に記載の半導体装置。
- 前記シリコン酸窒化膜は、Si−H結合のHがFT−IR法で1×1021原子数/cm3以下であり、FT−IR法でSi−O結合のピークが1020cm-1以上1075cm-1以下にあり、FT−IR法でSi−N結合のピーク(835cm-1)が検出されないことを特徴とする請求項1または5に記載の半導体装置。
- 前記シリコン酸窒化膜は、引張応力を有する請求項8に記載の半導体装置。
- 前記シリコン酸窒化膜は、厚さが100nm以上600nm以下である請求項1に記載の半導体装置。
- 前記第2の層間絶縁膜は、高密度プラズマCVDにより形成した請求項1に記載の半導体装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005249333A JP5110783B2 (ja) | 2004-10-28 | 2005-08-30 | 半導体装置 |
TW094136655A TWI459466B (zh) | 2004-10-28 | 2005-10-20 | 半導體裝置之製造方法 |
US11/254,725 US20060091451A1 (en) | 2004-10-28 | 2005-10-21 | Semiconductor device |
KR1020050102452A KR20060052334A (ko) | 2004-10-28 | 2005-10-28 | 반도체 장치 |
US12/234,079 US7875539B2 (en) | 2004-10-28 | 2008-09-19 | Semiconductor device |
US12/977,573 US8084343B2 (en) | 2004-10-28 | 2010-12-23 | Semiconductor device |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2004313358 | 2004-10-28 | ||
JP2004313358 | 2004-10-28 | ||
JP2005249333A JP5110783B2 (ja) | 2004-10-28 | 2005-08-30 | 半導体装置 |
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JP2006156952A JP2006156952A (ja) | 2006-06-15 |
JP5110783B2 true JP5110783B2 (ja) | 2012-12-26 |
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JP2005249333A Expired - Fee Related JP5110783B2 (ja) | 2004-10-28 | 2005-08-30 | 半導体装置 |
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US (3) | US20060091451A1 (ja) |
JP (1) | JP5110783B2 (ja) |
KR (1) | KR20060052334A (ja) |
TW (1) | TWI459466B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US7463422B2 (en) * | 2004-01-14 | 2008-12-09 | Carl Zeiss Smt Ag | Projection exposure apparatus |
JP5110783B2 (ja) * | 2004-10-28 | 2012-12-26 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
DE202007001431U1 (de) * | 2007-01-31 | 2007-05-16 | Infineon Technologies Austria Ag | Halbleiteranordnung und Leistungshalbleiterbauelement |
JP4886021B2 (ja) * | 2008-12-16 | 2012-02-29 | エルピーダメモリ株式会社 | 半導体装置及びその製造方法 |
US8318584B2 (en) * | 2010-07-30 | 2012-11-27 | Applied Materials, Inc. | Oxide-rich liner layer for flowable CVD gapfill |
TWI545652B (zh) * | 2011-03-25 | 2016-08-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
WO2013054823A1 (en) * | 2011-10-14 | 2013-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
CN106716699B (zh) * | 2014-09-23 | 2020-07-14 | 株式会社Lg化学 | 包含离子转移聚合物的复合膜及其制备方法 |
TWI548000B (zh) * | 2014-12-22 | 2016-09-01 | 力晶科技股份有限公司 | 半導體元件及其製作方法 |
CN106449977A (zh) * | 2016-10-27 | 2017-02-22 | 深圳大学 | 一种近红外光控存储器及其制造方法 |
CN109148272B (zh) * | 2017-06-16 | 2020-10-09 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
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JPH0846188A (ja) * | 1994-07-28 | 1996-02-16 | Sony Corp | 半導体装置 |
JP3047343B2 (ja) * | 1994-07-30 | 2000-05-29 | 日本電気株式会社 | 半導体装置の製造方法 |
US6705323B1 (en) * | 1995-06-07 | 2004-03-16 | Conceptus, Inc. | Contraceptive transcervical fallopian tube occlusion devices and methods |
KR100197980B1 (ko) * | 1995-09-14 | 1999-06-15 | 김영환 | 반도체 소자의 제조방법 |
JP3432997B2 (ja) * | 1996-04-23 | 2003-08-04 | 株式会社東芝 | 半導体装置に使用する絶縁膜 |
JP3098474B2 (ja) * | 1997-10-31 | 2000-10-16 | 日本電気株式会社 | 半導体装置の製造方法 |
US6437424B1 (en) * | 1999-03-09 | 2002-08-20 | Sanyo Electric Co., Ltd. | Non-volatile semiconductor memory device with barrier and insulating films |
US6100137A (en) * | 1999-08-12 | 2000-08-08 | Vanguard International Semiconductor Corporation | Etch stop layer used for the fabrication of an overlying crown shaped storage node structure |
US6774489B2 (en) * | 2000-08-29 | 2004-08-10 | Texas Instruments Incorporated | Dielectric layer liner for an integrated circuit structure |
JP2002353307A (ja) * | 2001-05-25 | 2002-12-06 | Toshiba Corp | 半導体装置 |
JP2003100755A (ja) * | 2001-09-27 | 2003-04-04 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US6649514B1 (en) * | 2002-09-06 | 2003-11-18 | Lattice Semiconductor Corporation | EEPROM device having improved data retention and process for fabricating the device |
JP4489345B2 (ja) * | 2002-12-13 | 2010-06-23 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JP5110783B2 (ja) * | 2004-10-28 | 2012-12-26 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
2005
- 2005-08-30 JP JP2005249333A patent/JP5110783B2/ja not_active Expired - Fee Related
- 2005-10-20 TW TW094136655A patent/TWI459466B/zh active
- 2005-10-21 US US11/254,725 patent/US20060091451A1/en not_active Abandoned
- 2005-10-28 KR KR1020050102452A patent/KR20060052334A/ko not_active Application Discontinuation
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2008
- 2008-09-19 US US12/234,079 patent/US7875539B2/en active Active
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2010
- 2010-12-23 US US12/977,573 patent/US8084343B2/en active Active
Also Published As
Publication number | Publication date |
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KR20060052334A (ko) | 2006-05-19 |
US8084343B2 (en) | 2011-12-27 |
JP2006156952A (ja) | 2006-06-15 |
US20110092037A1 (en) | 2011-04-21 |
US7875539B2 (en) | 2011-01-25 |
US20060091451A1 (en) | 2006-05-04 |
US20090017614A1 (en) | 2009-01-15 |
TW200620470A (en) | 2006-06-16 |
TWI459466B (zh) | 2014-11-01 |
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