JP2014090169A - 窒化インジウムガリウム発光デバイス - Google Patents

窒化インジウムガリウム発光デバイス Download PDF

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Publication number
JP2014090169A
JP2014090169A JP2013215853A JP2013215853A JP2014090169A JP 2014090169 A JP2014090169 A JP 2014090169A JP 2013215853 A JP2013215853 A JP 2013215853A JP 2013215853 A JP2013215853 A JP 2013215853A JP 2014090169 A JP2014090169 A JP 2014090169A
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JP
Japan
Prior art keywords
lattice constant
substrate
emitting device
indium
ingan
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Pending
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JP2013215853A
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Japanese (ja)
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JP2014090169A5 (enExample
Inventor
Reagan Krames Michael
レーガン クラメス マイケル
D'evelyn Mark
デヴェリン マーク
Akinori Koukitsu
アキノリ コウキツ
Yoshinao Kumagai
ヨシナオ クマガイ
Murakami Hisashi
ヒサシ ムラカミ
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Soraa Inc
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Soraa Inc
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Application filed by Soraa Inc filed Critical Soraa Inc
Publication of JP2014090169A publication Critical patent/JP2014090169A/ja
Publication of JP2014090169A5 publication Critical patent/JP2014090169A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2013215853A 2012-10-16 2013-10-16 窒化インジウムガリウム発光デバイス Pending JP2014090169A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261714693P 2012-10-16 2012-10-16
US61/714,693 2012-10-16

Publications (2)

Publication Number Publication Date
JP2014090169A true JP2014090169A (ja) 2014-05-15
JP2014090169A5 JP2014090169A5 (enExample) 2016-12-28

Family

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JP2013215853A Pending JP2014090169A (ja) 2012-10-16 2013-10-16 窒化インジウムガリウム発光デバイス

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US (2) US9978904B2 (enExample)
JP (1) JP2014090169A (enExample)

Cited By (9)

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Publication number Priority date Publication date Assignee Title
JP2016094309A (ja) * 2014-11-13 2016-05-26 古河機械金属株式会社 単結晶半導体層、自立基板、積層構造体及びこれらの製造方法
JP2018531514A (ja) * 2015-10-08 2018-10-25 オステンド・テクノロジーズ・インコーポレーテッド 琥珀色〜赤色の発光（＞６００ｎｍ）を有するＩＩＩ族窒化物半導体発光デバイス及びこれを作製するための方法
JP2019112302A (ja) * 2019-04-03 2019-07-11 古河機械金属株式会社 単結晶半導体層、自立基板、積層構造体及びこれらの製造方法
US10693040B2 (en) 2017-08-18 2020-06-23 Samsung Electronics Co., Ltd. Light emitting device and light emitting device package
JP2023510979A (ja) * 2020-01-22 2023-03-15 ポロ テクノロジーズ リミテッド 半導体構造及び製造方法
JP2023519468A (ja) * 2020-03-27 2023-05-11 グーグル エルエルシー 歪みが低減された窒化インジウムガリウム発光ダイオード
JP2024074813A (ja) * 2019-11-19 2024-05-31 オプノヴィックス コーポレーション 窒化インジウムガリウム構造およびデバイス
WO2025169644A1 (ja) * 2024-02-06 2025-08-14 株式会社ジャパンディスプレイ 発光素子および発光素子の製造方法
JP7788747B2 (ja) 2019-11-19 2025-12-19 オプノヴィックス コーポレーション 窒化インジウムガリウム構造およびデバイス

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US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US20110182056A1 (en) * 2010-06-23 2011-07-28 Soraa, Inc. Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US8896235B1 (en) 2010-11-17 2014-11-25 Soraa, Inc. High temperature LED system using an AC power source
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US9646827B1 (en) 2011-08-23 2017-05-09 Soraa, Inc. Method for smoothing surface of a substrate containing gallium and nitrogen
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
US9761763B2 (en) 2012-12-21 2017-09-12 Soraa, Inc. Dense-luminescent-materials-coated violet LEDs
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
US9595958B1 (en) * 2015-09-11 2017-03-14 Fuji Electric Co., Ltd. Semiconductor device and driving method for the same
WO2019015754A1 (en) * 2017-07-20 2019-01-24 Swegan Ab ELECTRON HIGH MOBILITY TRANSISTOR HETERROSTRUCTURE AND METHOD FOR PRODUCING THE SAME
CN114717535B (zh) * 2022-03-21 2023-07-14 太原理工大学 一种在硅衬底上制备纤锌矿InGaN纳米棒的方法

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JP7699127B2 (ja) 2020-03-27 2025-06-26 グーグル エルエルシー 歪みが低減された窒化インジウムガリウム発光ダイオード
WO2025169644A1 (ja) * 2024-02-06 2025-08-14 株式会社ジャパンディスプレイ 発光素子および発光素子の製造方法

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