JP4614988B2 - 窒化物系半導体レーザ素子及びその製造方法 - Google Patents
窒化物系半導体レーザ素子及びその製造方法 Download PDFInfo
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- H01S5/00—Semiconductor lasers
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- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
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- H01S5/00—Semiconductor lasers
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- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/32025—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth non-polar orientation
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Description
結晶成長のための主面として(1−100)面(m面と称されることもある)を有するn型GaN基板101の表面上に、MOCVD法などの結晶成長技術を適宜用いることで、窒化物半導体をエピタキシャル成長させ、各窒化物半導体層を形成する。
上述のように、各窒化物半導体をn型GaN基板101の表面上にエピタキシャル成長させて、図2のような積層構造の窒化物半導体層を備えたウェハが得られると、このウェハの表面上全面に、例えばPdやNi等を主成分とする第一のp電極112aを真空蒸着等により形成する。即ち、図2における一番上の層である上部コンタクト層109の表面上全面にp電極112aが形成される。
上述のように、エッチングを施すとともに埋込層111が形成されることで、埋込層111によって埋め込まれたリッジストライプ110を備えたウェハが得られると、フォトリソグラフィ工程によりレジストで、p電極となるパッド電極112bのパターニングが行われる。このとき、リッジストライプ110を中心にしてリッジストライプ110を十分に覆うような形状の開口部がマトリクス状に形成されたレジスト(不図示)がパターニングされる。即ち、レジストにおける開口部が、リッジストライプ110の延びる方向とその垂直方向に対して断続的に形成される。
このようにパッド電極112bを形成すると、次に、活性層近傍の段差が窒化物系半導体レーザ素子10(図1参照)の劈開面に生じることを防ぐための掘り込み部の形成を行う。まず、フォトリソグラフィ工程により、リッジストライプ110の両側におけるパッド電極112bのない領域に開口部を備えるレジスト(不図示)を作製する。このようにレジストを作製すると、ドライエッチングを行うことによって、開口部における窒化物半導体層の掘り込みを行う。このとき、SiO2からなる埋込層111をドライエッチングやウェットエッチングで除去し、続いてドライエッチングにて埋込層111の下の窒化物半導体層を掘り込むことで、開口部に対して掘り込み部115(図5、図6参照)を設ける。
このようにして、掘り込み部115を形成すると、この掘り込み部115の形成されたウェハの裏面(n型GaN基板101の裏面)を研削・研磨することで、このウェハの厚みを60〜150μm(例えば、100μm)程度とする。そして、ウェハの裏面(研削・研磨された面)にHf/AlやTi/Alをこの順に真空蒸着などで成膜して、n電極113aを形成する。また、このn電極113aのオーミック特性を保証するための熱処理が施される。更に、窒化物系半導体レーザ素子10(図1参照)をマウントする際にマウントを容易に行うためのメタライズ電極113bを、n電極113aを覆うようにAuなどの金属膜を蒸着させることで、形成する。
このようにしてn電極113a及びメタライズ電極113bそれぞれがウェハの裏面に形成されると、分割線の一部にあたる位置にスクライブライン(線状の傷)117を形成して、リッジストライプ110にほぼ垂直な方向に劈開し、共振器長となる幅300〜2000μm(例えば800μm)の複数のバーを作製する。
更にこのようにして共振器端面に反射膜が形成されたバーを、幅200〜300μm程度にチップ分割することで、図1でしめすような窒化物系半導体レーザ素子10が得られる。このとき、例えば、リッジストライプ110が窒化物系半導体レーザ素子10の中央位置となるように分割するなどのように、リッジストライプ110に影響を与えない位置を分割位置として分割を行う。
このようにして得られた窒化物系半導体レーザ素子10の光出力を評価したところCW(連続波)駆動で600mW程度の光出力を得た。そして、駆動電流をさらに増加したところ、デバイスが破壊しそれ以上の光出力は得られなかった。破壊の状況を詳細に観察すると、光出射側の導波路の端面において結晶が吹き飛んでおり、機械的に共振器端面が破壊していた。これにより、COD(光学損傷)レベルが約600mWであると測定された。
比較例について、劈開後のバーの劈開面300をSEM(走査型電子顕微鏡)にて詳細に観察したところ、活性層付近の位置において、積層面に平行に、0.1μm以下程度の非常に微小な段差301が生じていた(図8参照)。このような段差は、レーザの発振動作を妨げるほどの影響のあるものでなく、詳細に分析を行わないと判明しない程度のものであり、従来、(1−100)を主面とする基板が用いられ、劈開法により形成されたレーザ素子において存在することが知られていなかった。一方、本発明の劈開後のバーにおいては、導波路付近の劈開面にこのような段差はほとんど観察されず、平坦であった。
101 窒化物半導体基板
105 活性層
110 リッジストライプ(ストライプ状導波路)
115 掘り込み部
116 保護膜
300 劈開面(共振器端面)
Claims (5)
- 結晶成長のための主面が(1−100)面である窒化物半導体基板上に、活性層を含む複数の窒化物半導体層を積層する工程と、
該窒化物半導体層にストライプ状導波路を形成する工程と、
該窒化物半導体層に該窒化物半導体層表面に向けて開口した掘り込み領域である掘り込み部を形成する工程と、
前記ストライプ状導波路および前記掘り込み部が形成されたウェハにおいて、劈開の起点となる溝を前記ウェハの一方の端に設ける工程と、
前記溝に沿ってウェハに外力を加え、前記掘り込み部から前記ストライプ状導波路の方向へ劈開を進行させ、前記主面に直交するような劈開面を形成する工程を有し、
前記掘り込み部は、前記劈開面が通る位置であって、前記ストライプ状導波路の脇に形成されることを特徴とする窒化物系半導体レーザ素子の製造方法。 - 前記掘り込み部の底面が前記活性層より前記窒化物半導体基板側に位置する窒化物半導体層に達することを特徴とする請求項1に記載の窒化物系半導体レーザ素子の製造方法。
- 前記掘り込み部が、前記ストライプ状導波路から2μm以上200μm以下の離れた位置に形成されることを特徴とする請求項1又は2に記載の窒化物系半導体レーザ素子の製造方法。
- 前記掘り込み部は、前記窒化物半導体レーザ素子の共振器方向について、前記劈開面を含む一部に設けられ、共振器方向全体に渡らないことを特徴とする請求項1〜3のいずれかに記載の窒化物系半導体レーザ素子の製造方法。
- 前記掘り込み部は、前記窒化物半導体レーザ素子の共振器方向全体に渡って、前記ストライプ状導波路に並行に設けられることを特徴とする請求項1〜3のいずれかに記載の窒化物系半導体レーザ素子の製造方法。
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JP2007144428A JP4614988B2 (ja) | 2007-05-31 | 2007-05-31 | 窒化物系半導体レーザ素子及びその製造方法 |
CN2008100999710A CN101316026B (zh) | 2007-05-31 | 2008-05-29 | 氮化物半导体激光器芯片及其制造方法 |
US12/155,186 US7995632B2 (en) | 2007-05-31 | 2008-05-30 | Nitride semiconductor laser chip and fabrication method thereof |
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