JP2014090169A - 窒化インジウムガリウム発光デバイス - Google Patents
窒化インジウムガリウム発光デバイス Download PDFInfo
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- JP2014090169A JP2014090169A JP2013215853A JP2013215853A JP2014090169A JP 2014090169 A JP2014090169 A JP 2014090169A JP 2013215853 A JP2013215853 A JP 2013215853A JP 2013215853 A JP2013215853 A JP 2013215853A JP 2014090169 A JP2014090169 A JP 2014090169A
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- lattice constant
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
【解決手段】グレーディング構造を用いて成長させた新規な構造1000は、GaN基板1004上にHVPEリアクタを用いて成長させる。InGaNの成長速度が極めて高速であり、1μm厚さの多工程層を容易に成長させることができる。
【選択図】図10
Description
本出願は、米国仮出願第61/714,693号(出願日:2012年10月16日)の35U.S.C.§119(e)の下における恩恵を主張する。
本開示は、InGaNテンプレート層上に作製されたInGaN系の発光デバイスに関連する。
in InGaN grown by
Metalorganic chemical vapor deposition」(Appl. Phys. Lett.,
vol. 72, pp. 40-42, 1998)。相分離は、特定の層厚さにおいて特定のInNモル分率の臨界値を超えた場合において発生する。このような制限は、約10%InNのInGaN層の成長が厚さ0.2μmを超えた場合にみられることが多く、その結果例えば、「黒色」または「灰色」のウェーハが発生する。
Express 2, 082101, 2009、J. W. Raring et
al.「High-efficiency
blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates」(Appl. Phys.
Express 3, 112101 (2010))。しかし、これらの構造上において成長されたより長い波長のデバイスの性能は、より短波長のものに比べて大幅に低くなる。また、歪みと関連する材料品質問題を成長面配向によって解消できるのかは不明である。実際、最近行われた半極性(Al、In、Ga)Nヘテロ構造の特徴付けによれば、例えば、AlGaNおよびGaN間のヘテロ界面において高密度のミスフィット転位が形成さることが分かっている(以下を参照:A. Tyagi et al., 「Partial strain
relaxation via misfit dislocation generation at heterointerfaces
in (Al, In)GaN epitaxial
layers grown on semipolar (11-22) GaN
free standing substrates」(Appl. Phys. Lett. 95, 251905, 2009))。これらの転位は、非放射再結合中心として機能する可能性が高く、これらの転位から劣化機構が発生し得、その結果、(例えば、固体照明などの用途に必要な)長寿命動作が失われる。さらに、外部量子効率対LED波長についての報告によれば、InNモル分率の増加と共に外部量子効率の大幅な低下が主にみられている。このような現象は、成長面配向に関係無く「緑色ギャップ」と呼ばれることが多い。
InGaN ternary alloy」、Journal Crystal Growth、vol. 318 (2011) 441-445)。ソースゾーンにおいて、ガリウム金属およびインジウム金属の2つのボートを配置し、Cl2およびIG(窒素、ヘリウムおよびアルゴンのような不活性ガス)の混合ガスまたはCl2、IGおよび水素の混合ガスをソースボート中へと送る。グループIII前駆体であるGaCl3およびInCl3を反応(1)および(2)(以下)によって生成し、堆積ゾーン中へと移送する。上記反応の代わりに、固体GaCl3およびInCl3ソースから気化された蒸気圧力をグループIII前駆体として用いることができる。よって、以下のような関連反応が得られる。
Ga(単数または複数)+1.5Cl2→GaCl3 (1)
In(単数または複数)+1.5Cl2→InCl3 (2)
GaCl3+NH3→GaN(アロイ)+3HCl (3)
InCl3+NH3→InN(アロイ)+3HCl (4)
(1997) pp. L601-L603)。これらのサンプルの固体組成は、上記サンプルのものと類似している。しかし、上記サンプルのフォトルミネセンスは、固体ソース中の高不純物濃度に起因して観察されなかった。図中、PIIIおよびPvは、グループIIIソース(PIn+PGa)およびグループVソース(PNH3)の入力部の分圧を示す。
Claims (14)
- ガリウムおよびインジウムを含有する窒化物基板と、
前記基板上に設けられるn型層と、
前記n型層上に設けられる活性層と、
前記活性層上に設けられるp型層と、
を備え、
前記ガリウムおよびインジウムを含有する窒化物基板は、4μmを超える厚さを含み、0.5%を超えるInN組成を有する、
発光デバイス。 - 前記基板は、ウルツ鉱結晶構造であって、大面積の表面の結晶配向は、(0001)+c面および(000−1)−c面のうちの1つの約5度以内であることによって特徴付けられる、請求項1記載の発光デバイス。
- 前記基板は、実質的にクラックを含まない、請求項1記載の発光デバイス。
- 前記ガリウムおよびインジウムを含有する窒化物基板は、特定のインジウム含有窒化物組成について平衡格子定数の0.1%以内のa軸格子定数およびc軸格子定数を有することで歪みが緩和されている、請求項1記載の発光デバイス。
- 前記ガリウムおよびインジウムを含有する窒化物基板は、特定のインジウム含有窒化物組成について平衡格子定数の0.01%以内のa軸格子定数およびc軸格子定数を有することで歪みが緩和されている、請求項1記載の発光デバイス。
- 前記ガリウムおよびインジウムを含有する窒化物基板は、特定のインジウム含有窒化物組成について平衡格子定数の0.001%以内のa軸格子定数およびc軸格子定数を有することで歪みが緩和されている、請求項1記載の発光デバイス。
- ランプ、照明器具および照明システムのうち少なくとも1つをさらに含み、前記発光デバイスは、前記ランプ、前記照明器具または前記照明システムに組み込まれている、請求項1記載の発光デバイス。
- 基板と、
前記基板上に設けられるn型層と、
前記n型層上に設けられる活性層と、
前記活性層上に設けられるp型層と、
を備え、
前記n型層、前記活性層および前記p型層はそれぞれ面内格子定数によって特徴付けられ、前記面内格子定数のそれぞれは、同様に配向されたGaNの面内格子定数よりも少なくとも1%だけ大きい発光デバイス。 - 前記基板は、ウルツ鉱結晶構造であって、大面積の表面の結晶配向は、(0001)+c面および(000−1)−c面のうちの1つの約5度以内であることによって特徴付けられる、請求項8記載の発光デバイス。
- 前記基板は実質的にクラックを含まない、請求項8記載の発光デバイス。
- 前記基板はガリウムおよびインジウムを含有する窒化物を含み、特定のインジウム含有窒化物組成について各平衡格子定数の0.1%以内のa軸格子定数およびc軸格子定数を有することで歪みが緩和されている、請求項8記載の発光デバイス。
- 前記基板はガリウムおよびインジウムを含有する窒化物を含み、特定のインジウム含有窒化物組成について各平衡格子定数の0.01%以内のa軸格子定数およびc軸格子定数を有することで歪みが緩和されている、請求項8記載の発光デバイス。
- 前記基板はガリウムおよびインジウムを含有する窒化物を含み、特定のインジウム含有窒化物組成について各平衡格子定数の0.001%以内のa軸格子定数およびc軸格子定数を有することで歪みが緩和れている、請求項8記載の発光デバイス。
- ランプ、照明器具および照明システムのうち少なくとも1つをさらに含み、前記発光デバイスは、前記ランプ、前記照明器具または前記照明システム内に組み込まれている、請求項8記載の発光デバイス。
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US201261714693P | 2012-10-16 | 2012-10-16 | |
US61/714,693 | 2012-10-16 |
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JP2018531514A (ja) * | 2015-10-08 | 2018-10-25 | オステンド・テクノロジーズ・インコーポレーテッド | 琥珀色〜赤色の発光(>600nm)を有するIII族窒化物半導体発光デバイス及びこれを作製するための方法 |
JP2019112302A (ja) * | 2019-04-03 | 2019-07-11 | 古河機械金属株式会社 | 単結晶半導体層、自立基板、積層構造体及びこれらの製造方法 |
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US20140103356A1 (en) | 2014-04-17 |
US9978904B2 (en) | 2018-05-22 |
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