JP7039684B2 - 高電子移動度トランジスタのためのヘテロ構造及びその製造方法 - Google Patents
高電子移動度トランジスタのためのヘテロ構造及びその製造方法 Download PDFInfo
- Publication number
- JP7039684B2 JP7039684B2 JP2020502287A JP2020502287A JP7039684B2 JP 7039684 B2 JP7039684 B2 JP 7039684B2 JP 2020502287 A JP2020502287 A JP 2020502287A JP 2020502287 A JP2020502287 A JP 2020502287A JP 7039684 B2 JP7039684 B2 JP 7039684B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- heterostructure
- gan channel
- gan
- nucleation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 230000006911 nucleation Effects 0.000 claims description 70
- 238000010899 nucleation Methods 0.000 claims description 70
- 239000000758 substrate Substances 0.000 claims description 70
- 230000004888 barrier function Effects 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 43
- 238000002161 passivation Methods 0.000 claims description 25
- 230000007717 exclusion Effects 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 229910002704 AlGaN Inorganic materials 0.000 claims description 7
- 238000002441 X-ray diffraction Methods 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 238000004630 atomic force microscopy Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 265
- 239000002243 precursor Substances 0.000 description 42
- 239000007789 gas Substances 0.000 description 14
- 239000000203 mixture Substances 0.000 description 14
- 239000012159 carrier gas Substances 0.000 description 12
- 229910052738 indium Inorganic materials 0.000 description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 12
- RXMRGBVLCSYIBO-UHFFFAOYSA-M tetramethylazanium;iodide Chemical compound [I-].C[N+](C)(C)C RXMRGBVLCSYIBO-UHFFFAOYSA-M 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000007847 structural defect Effects 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000000089 atomic force micrograph Methods 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical group CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- -1 Ga (CH 3 ) 3 Chemical compound 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- XKMRRTOUMJRJIA-UHFFFAOYSA-N ammonia nh3 Chemical compound N.N XKMRRTOUMJRJIA-UHFFFAOYSA-N 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002017 high-resolution X-ray diffraction Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012048 reactive intermediate Substances 0.000 description 1
- 239000012713 reactive precursor Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
- H01L21/02661—In-situ cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Description
前述のように、lnxAlyGa1-x-yN/GaNヘテロ構造は、高電子移動度トランジスタ(HEMT)デバイスなどの半導体デバイスで使用されてもよい。
ヘテロ構造の層は、有機金属気相エピタキシー(MOVPE)としても知られている有機金属化学気相成長法(MOCVD)によって堆積されてもよい。MOCVD又はMOVPEは、気相前駆体の化学反応によって固体材料が基板上に堆積される化学蒸着法である。この方法は、主に、複雑な半導体多層構造を成長させるために使用される。
核生成層、チャネル層、及び、随意的な更なる層の成長前に、主に酸素だけでなく炭素からも構成され得る表面汚染物を除去するためにSiC基板が前処理されてもよい。
ここで、MOCVDによりlnxAlyGa1-x-yN/GaNヘテロ構造を成長させるステップについて更に詳しく説明する。
前処理が現場で行なわれる場合、前処理ガス、例えばHCI及び/又はH2の流れは、核生成層成長への移行時に保持されてもよい。前処理が現場外で実行される場合、前処理されたSiC基板はリアクタに移され、そこで核生成層の成長が起こるはずである。基板の移動は、周囲条件、すなわち空気中で行なわれてもよい。前処理が現場外で行なわれる場合、SiC基板が反応室に移されたときに、以下で説明するのと同じ方法で、リアクタの温度及び圧力が設定されてもよい。
前述のように、超格子は、2つのAlxGa1-xN層、Alx1Ga1-x1N、及び、Alx2Ga1-x2Nを備えてもよく、この場合、それぞれx1>x2である。
随意的な超格子の代わりとして、nxAlyGa1-x-yN核生成層上にバックバリア層が成長されてもよい。
ここで、核生成層上又は超格子層上でのGaNチャネル層の直接的な成長について説明する。
GaNチャネル層の成長後、バリア層がGaN層上に成長されてもよい。バリア層の成長を開始する前に、Inを含むバリアが使用される場合、MOCVDチャンバ内の温度が低下されてもよい。温度は、MOCVDリアクタを加熱するための電源により供給される電力をオフにする(又は減少させる)ことで低下されてもよい。
バリア層とGaNチャネル層との間でAlGaN排除層が成長されてもよい。そのようなAIGaN排除層におけるアルミニウム含有量は一般に50~70%である。
最後に、GaN又はSiNの随意的なパッシベーション/キャップ層はバリア層上に成長されてもよい。
X線回折(XRD)特性は、GaNチャネル層の結晶品質を特徴付けるために、λ=0.15406nmのCu Kα1放射線を用いた高解像度X線回折計(Philips X’Pert MRD)によって実行された。HR-XRDシステムには、主光学素子及び副光学素子としてそれぞれハイブリッドミラー及び3軸結晶が設けられ、-0.003°(~11arcsec)の分解能を達成できる。
図3a及び図4aには、従来技術の方法(図3a)及び本明細書中に開示されるプロセス(図4a)のそれぞれにしたがって生成されたヘテロ構造におけるGaNチャネル層の光学顕微鏡(OM)画像が示される。
Claims (13)
- 高電子移動度トランジスタ(HEMT)のためのヘテロ構造(1)であって、
SiC基板(11)と、
前記SiC基板上に形成されるlnxAlyGa1-x-yN核生成層(12)であって、x=0-1、y=0-1、好ましくはx<0.05及びy>0.50である、lnxAlyGa1-x-yN核生成層(12)と、
前記lnxAlyGa1-x-yN核生成層(12)上に、直接に、又は、前記ヘテロ構造の機能に影響を与えない1つ以上の更なる層と共に、形成されるGaNチャネル層(14)と、
を備え、
前記GaNチャネル層(14)の厚さは、50~500nmであり、
前記ln x Al y Ga 1-x-y N核生成層(12)の厚さは、2~100nmであり、前記ln x Al y Ga 1-x-y N核生成層(12)が完全に歪んでいるものであり、
前記SiC基板を除いた前記ヘテロ構造の総厚は、1μm未満であり、
前記GaNチャネル層(14)中の炭素の意図しないドーピング濃度は、1E+17cm -3 未満であり、
前記GaNチャネル層(14)は、X線回折XRDによって決定される300arcsec未満のFMHWを有する(002)ピークを伴うロッキングカーブと、400arcsec未満のFMHWを有する(102)ピークを伴うロッキングカーブとを与え、
前記ヘテロ構造(1)の前記GaNチャネル層(14)の表面は、原子間力顕微鏡法AFMによって決定される、1.8nm未満の10×10μm2走査面積にわたって、若しくは、1nm未満の3×3μm2の走査面積にわたって、rms粗さを伴う原子ステップフロー形態を示す、
ことを特徴とするヘテロ構造(1)。 - 前記lnxAlyGa1-x-yN核生成層(12)が均質な又は変化するAl含有量を有する、請求項1に記載のヘテロ構造(1)。
- Alx1Ga1-x1N及びAlx2Ga1-x2Nの層の周期構造を有する超格子(13)を備え、x1>x2、であり、又は、前記lnxAlyGa1-x-yN核生成層(12)と前記GaNチャネル層(14)との間に形成されるlnx5Aly5Ga1-x5-y5Nバックバリア層(13)を備える、請求項1から2のいずれか一項に記載のヘテロ構造(1)。
- 前記GaNチャネル層(14)上又は排除層(15)上に形成される、lnx3Aly3Ga1-x3-y3Nバリア層、0≦x3<0.20及び、0.15≦y3<1、或いは、Alx4Ga1-x4Nバリア層、0.15≦x4<1、のバリア層(16)を更に備える、請求項1から3のいずれか一項に記載のヘテロ構造(1)。
- 前記ヘテロ構造は、前記GaNチャネル層(14)と前記バリア層(16)との間にAlN排除層(15)を更に備える、請求項4に記載のヘテロ構造(1)。
- 前記バリア層(16)上に形成されるSiN又はGaNのパッシベーション層(17)を更に備える、請求項5に記載のヘテロ構造(1)。
- 前記ヘテロ構造の総厚は、1μm未満、好ましくは0.8μm未満、最も好ましくは0.6μm未満である、請求項1から6のいずれか一項に記載のヘテロ構造(1)。
- 高電子移動度トランジスタ(HEMT)のための有機金属化学蒸着(MOCVD)によるヘテロ構造(1)の製造方法であって、
SiC基板(11)を用意するステップと、
前記SiC基板上にlnxAlyGa1-x-yN核生成層(12)を設けるステップであって、x=0-1、y=0-1である、ステップと、
前記lnxAlyGa1-x-yN核生成層(12)上に、直接に、又は、前記ヘテロ構造の機能に影響を与えない1つ以上の更なる層と共に、GaNチャネル層(14)を設けるステップと、
を含み、
前記lnxAlyGa1-x-yN核生成層(12)及び前記GaNチャネル層(14)の成長時の圧力が、20~200ミリバールであり、
前記lnxAlyGa1-x-yN核生成層(12)の成長時の温度は、900~1200℃であり、
前記GaNチャネル層(14)の成長時の温度は、1000~1150℃であり、
前記lnxAlyGa1-x-yN核生成層(12)は、2~200nmの厚さで設けられるものであり、
前記GaNチャネル層(14)は、50~500nmの厚さで設けられるものであり、
前記ln x Al y Ga 1-x-y N核生成層(12)は、2~100nmの厚さで設けられるものあり、
前記ln x Al y Ga 1-x-y N核生成層(12)は、完全に歪んで設けられているものであり、
前記ヘテロ構造は、前記SiC基板を除いた前記ヘテロ構造の総厚が1μm未満になるように設けられているものであり、
前記GaNチャネル層(14)は、前記GaNチャネル層(14)中の炭素の意図しないドーピング濃度が1E+17cm -3 未満になるように設けられるものである、ことを特徴とする高電子移動度トランジスタ(HEMT)のためのヘテロ構造(1)の製造方法。 - 前記GaNチャネル層(14)上に形成される、lnx3Aly3Ga1-x3-y3Nバリア層、0≦x3<0.20或いは、Alx4Ga1-x4Nバリア層、0.15≦x4<1、を設ける更なるステップを含む、請求項8に記載の高電子移動度トランジスタ(HEMT)のためのヘテロ構造(1)の製造方法。
- バリア層(16)を設けるとともに、Al含有量が40~80%であるAlGaN排除層(15)を前記バリア層(16)と前記GaNチャネル層(14)との間に設ける更なるステップを含む、請求項8又は9に記載の高電子移動度トランジスタ(HEMT)のためのヘテロ構造(1)の製造方法。
- 前記バリア層(16)上にSiN又はGaNのパッシベーション層(17)を設ける更なるステップを含む、請求項10に記載の高電子移動度トランジスタ(HEMT)のためのヘテロ構造(1)の製造方法。
- 請求項11に記載のヘテロ構造(1)を設けるステップと、前記パッシベーション層(17)上にソース、ゲート及びドレイン接点を設けるステップとを含むHEMTデバイスの製造方法。
- ゲート接点(19)を設けるとともに、前記パッシベーション層(17)と前記ゲート接点(19)との間に絶縁層(21)を設けるステップを更に含む、請求項12に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2017/068300 WO2019015754A1 (en) | 2017-07-20 | 2017-07-20 | ELECTRON HIGH MOBILITY TRANSISTOR HETERROSTRUCTURE AND METHOD FOR PRODUCING THE SAME |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020530939A JP2020530939A (ja) | 2020-10-29 |
JP7039684B2 true JP7039684B2 (ja) | 2022-03-22 |
Family
ID=59523080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020502287A Active JP7039684B2 (ja) | 2017-07-20 | 2017-07-20 | 高電子移動度トランジスタのためのヘテロ構造及びその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20200203521A1 (ja) |
EP (1) | EP3655989A1 (ja) |
JP (1) | JP7039684B2 (ja) |
KR (1) | KR102330907B1 (ja) |
CN (1) | CN111164733B (ja) |
TW (1) | TWI786156B (ja) |
WO (1) | WO2019015754A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3905335A1 (en) * | 2020-04-28 | 2021-11-03 | Infineon Technologies AG | Group iii nitride-based transistor device |
CN111834454A (zh) * | 2020-06-08 | 2020-10-27 | 西安电子科技大学 | 一种具有自对准源漏电极的氮化镓晶体管及其制备方法 |
WO2023070428A1 (zh) * | 2021-10-28 | 2023-05-04 | 华为技术有限公司 | 集成电路、其制备方法、功率放大器及电子设备 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005167275A (ja) | 2000-12-07 | 2005-06-23 | Ngk Insulators Ltd | 半導体素子 |
JP2012248890A (ja) | 2012-08-31 | 2012-12-13 | Fujitsu Ltd | 半導体エピタキシャル基板、およびその製造方法 |
JP2013073962A (ja) | 2011-09-26 | 2013-04-22 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
JP2013229493A (ja) | 2012-04-26 | 2013-11-07 | Sharp Corp | Iii族窒化物半導体積層基板およびiii族窒化物半導体電界効果トランジスタ |
JP2016004948A (ja) | 2014-06-18 | 2016-01-12 | 株式会社東芝 | 半導体装置 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200610150A (en) * | 2004-08-30 | 2006-03-16 | Kyocera Corp | Sapphire baseplate, epitaxial substrate and semiconductor device |
US20070018198A1 (en) * | 2005-07-20 | 2007-01-25 | Brandes George R | High electron mobility electronic device structures comprising native substrates and methods for making the same |
US8435879B2 (en) * | 2005-12-12 | 2013-05-07 | Kyma Technologies, Inc. | Method for making group III nitride articles |
JP5562579B2 (ja) * | 2009-05-12 | 2014-07-30 | 日本碍子株式会社 | 半導体素子用エピタキシャル基板の作製方法 |
US8624260B2 (en) * | 2010-01-30 | 2014-01-07 | National Semiconductor Corporation | Enhancement-mode GaN MOSFET with low leakage current and improved reliability |
US9564320B2 (en) * | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
KR20120032329A (ko) * | 2010-09-28 | 2012-04-05 | 삼성전자주식회사 | 반도체 소자 |
US9236530B2 (en) * | 2011-04-01 | 2016-01-12 | Soraa, Inc. | Miscut bulk substrates |
TW201340335A (zh) * | 2012-03-16 | 2013-10-01 | Richtek Technology Corp | 蕭特基位障二極體及其製造方法 |
CN104641453B (zh) * | 2012-10-12 | 2018-03-30 | 住友电气工业株式会社 | Iii族氮化物复合衬底及其制造方法以及制造iii族氮化物半导体器件的方法 |
KR102111459B1 (ko) * | 2013-06-25 | 2020-05-15 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
JP2015192026A (ja) * | 2014-03-28 | 2015-11-02 | 住友電気工業株式会社 | 半導体装置の製造方法 |
USRE49285E1 (en) * | 2015-01-09 | 2022-11-08 | Swegan Ab | Semiconductor device structure and methods of its production |
JPWO2016143653A1 (ja) * | 2015-03-06 | 2018-01-18 | スタンレー電気株式会社 | Iii族窒化物積層体、及び該積層体を有する発光素子 |
EP3278366A1 (en) * | 2015-03-31 | 2018-02-07 | Swegan AB | Heterostructure and method of its production |
US9735240B2 (en) * | 2015-12-21 | 2017-08-15 | Toshiba Corporation | High electron mobility transistor (HEMT) |
US10529561B2 (en) * | 2015-12-28 | 2020-01-07 | Texas Instruments Incorporated | Method of fabricating non-etch gas cooled epitaxial stack for group IIIA-N devices |
US9728610B1 (en) * | 2016-02-05 | 2017-08-08 | Infineon Technologies Americas Corp. | Semiconductor component with a multi-layered nucleation body |
-
2017
- 2017-07-20 WO PCT/EP2017/068300 patent/WO2019015754A1/en unknown
- 2017-07-20 US US16/632,347 patent/US20200203521A1/en active Pending
- 2017-07-20 JP JP2020502287A patent/JP7039684B2/ja active Active
- 2017-07-20 CN CN201780093410.7A patent/CN111164733B/zh active Active
- 2017-07-20 EP EP17748683.4A patent/EP3655989A1/en active Pending
- 2017-07-20 KR KR1020207004339A patent/KR102330907B1/ko active IP Right Grant
-
2018
- 2018-07-19 TW TW107124935A patent/TWI786156B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005167275A (ja) | 2000-12-07 | 2005-06-23 | Ngk Insulators Ltd | 半導体素子 |
JP2013073962A (ja) | 2011-09-26 | 2013-04-22 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
JP2013229493A (ja) | 2012-04-26 | 2013-11-07 | Sharp Corp | Iii族窒化物半導体積層基板およびiii族窒化物半導体電界効果トランジスタ |
JP2012248890A (ja) | 2012-08-31 | 2012-12-13 | Fujitsu Ltd | 半導体エピタキシャル基板、およびその製造方法 |
JP2016004948A (ja) | 2014-06-18 | 2016-01-12 | 株式会社東芝 | 半導体装置 |
Non-Patent Citations (1)
Title |
---|
Li et al.,Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results,APPLI. PHYS. LETT.,米国,AIP,2015年12月28日,Vol.107,262105,https://doi.org/10.1063/1.4937575 |
Also Published As
Publication number | Publication date |
---|---|
TWI786156B (zh) | 2022-12-11 |
WO2019015754A1 (en) | 2019-01-24 |
TW201919238A (zh) | 2019-05-16 |
KR20200057698A (ko) | 2020-05-26 |
JP2020530939A (ja) | 2020-10-29 |
EP3655989A1 (en) | 2020-05-27 |
US20200203521A1 (en) | 2020-06-25 |
CN111164733B (zh) | 2024-03-19 |
KR102330907B1 (ko) | 2021-11-25 |
CN111164733A (zh) | 2020-05-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8728938B2 (en) | Method for substrate pretreatment to achieve high-quality III-nitride epitaxy | |
USRE49285E1 (en) | Semiconductor device structure and methods of its production | |
US8405128B2 (en) | Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition | |
Hertkorn et al. | Optimization of nucleation and buffer layer growth for improved GaN quality | |
JP7039684B2 (ja) | 高電子移動度トランジスタのためのヘテロ構造及びその製造方法 | |
Su et al. | Stress engineering with AlN/GaN superlattices for epitaxial GaN on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor | |
JP6736577B2 (ja) | ヘテロ構造体およびその生成方法 | |
JP2006060164A (ja) | 窒化物半導体デバイスおよび窒化物半導体結晶成長方法 | |
US20210062360A1 (en) | Nano-Ridge Engineering | |
Luo et al. | Improved surface morphology and crystalline quality of semi-polar (112‾ 2) AlN epilayer with dual moderate-temperature-grown AlN interlayers | |
Luo et al. | A study of GaN regrowth on the micro-faceted GaN template formed by in situ HCl etching | |
Kim et al. | Growth of self-assembled nanovoids embedded AlN layer on a low-temperature buffer by metal organic chemical vapor deposition | |
Hasenöhrl et al. | Growth of N-polar In-rich InAlN by metal organic chemical vapor deposition on on-and off-axis sapphire | |
Zhang | MOCVD growth of GaN on 200mm Si and addressing foundry compatibility issues | |
LI | MOCVD GROWTH OF GAN ON 200MM SI AND ADDRESSING FOUNDRY COMPATIBILITY ISSUES | |
KR20090083604A (ko) | 무분극성 질화갈륨 박막의 제조방법 | |
Hertkorn | Optimization of GaN Growth Conditions for Improved Device Performance | |
Jain | Epitaxial deposition of low-defect AlN and AlGaN films |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200318 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200617 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210630 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210706 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20210929 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211025 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220208 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220309 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7039684 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |