JP2011049539A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011049539A5 JP2011049539A5 JP2010167343A JP2010167343A JP2011049539A5 JP 2011049539 A5 JP2011049539 A5 JP 2011049539A5 JP 2010167343 A JP2010167343 A JP 2010167343A JP 2010167343 A JP2010167343 A JP 2010167343A JP 2011049539 A5 JP2011049539 A5 JP 2011049539A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- oxide
- oxide semiconductor
- electrode layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 229910002064 alloy oxide Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910003437 indium oxide Inorganic materials 0.000 claims 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010167343A JP5700762B2 (ja) | 2009-07-31 | 2010-07-26 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009179722 | 2009-07-31 | ||
| JP2009179722 | 2009-07-31 | ||
| JP2010167343A JP5700762B2 (ja) | 2009-07-31 | 2010-07-26 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012182883A Division JP5216929B2 (ja) | 2009-07-31 | 2012-08-22 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011049539A JP2011049539A (ja) | 2011-03-10 |
| JP2011049539A5 true JP2011049539A5 (enExample) | 2013-08-08 |
| JP5700762B2 JP5700762B2 (ja) | 2015-04-15 |
Family
ID=43526145
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010167343A Active JP5700762B2 (ja) | 2009-07-31 | 2010-07-26 | 半導体装置の作製方法 |
| JP2012182883A Active JP5216929B2 (ja) | 2009-07-31 | 2012-08-22 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012182883A Active JP5216929B2 (ja) | 2009-07-31 | 2012-08-22 | 半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8421083B2 (enExample) |
| JP (2) | JP5700762B2 (enExample) |
| KR (2) | KR101967480B1 (enExample) |
| CN (2) | CN102473734B (enExample) |
| TW (2) | TWI525839B (enExample) |
| WO (1) | WO2011013596A1 (enExample) |
Families Citing this family (149)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9041202B2 (en) * | 2008-05-16 | 2015-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| EP2256814B1 (en) | 2009-05-29 | 2019-01-16 | Semiconductor Energy Laboratory Co, Ltd. | Oxide semiconductor device and method for manufacturing the same |
| KR101944656B1 (ko) * | 2009-06-30 | 2019-04-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제조 방법 |
| WO2011004755A1 (en) | 2009-07-10 | 2011-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR20120051727A (ko) | 2009-07-31 | 2012-05-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 디바이스 및 그 형성 방법 |
| WO2011013523A1 (en) | 2009-07-31 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR102362616B1 (ko) | 2009-07-31 | 2022-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| WO2011013502A1 (en) | 2009-07-31 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR101730347B1 (ko) | 2009-09-16 | 2017-04-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| CN105023942B (zh) | 2009-12-28 | 2018-11-02 | 株式会社半导体能源研究所 | 制造半导体装置的方法 |
| WO2011125454A1 (en) | 2010-04-09 | 2011-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| EP2579237A4 (en) * | 2010-05-24 | 2017-10-11 | Sharp Kabushiki Kaisha | Thin film transistor substrate and method for producing same |
| US8895375B2 (en) | 2010-06-01 | 2014-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Field effect transistor and method for manufacturing the same |
| US8685787B2 (en) | 2010-08-25 | 2014-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US8883555B2 (en) | 2010-08-25 | 2014-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, manufacturing method of electronic device, and sputtering target |
| KR20120063809A (ko) * | 2010-12-08 | 2012-06-18 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
| WO2012077682A1 (ja) * | 2010-12-08 | 2012-06-14 | シャープ株式会社 | 半導体装置および表示装置 |
| TWI534905B (zh) | 2010-12-10 | 2016-05-21 | 半導體能源研究所股份有限公司 | 顯示裝置及顯示裝置之製造方法 |
| US8536571B2 (en) | 2011-01-12 | 2013-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| TWI535032B (zh) | 2011-01-12 | 2016-05-21 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| TWI570809B (zh) | 2011-01-12 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US8921948B2 (en) | 2011-01-12 | 2014-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN103299431B (zh) * | 2011-01-13 | 2016-06-15 | 夏普株式会社 | 半导体装置 |
| US9019440B2 (en) | 2011-01-21 | 2015-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI539597B (zh) | 2011-01-26 | 2016-06-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| TWI570920B (zh) | 2011-01-26 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US8629445B2 (en) | 2011-02-21 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and electronic appliance |
| US9023684B2 (en) | 2011-03-04 | 2015-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5269269B2 (ja) * | 2011-03-11 | 2013-08-21 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
| TWI521612B (zh) * | 2011-03-11 | 2016-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| KR101900525B1 (ko) | 2011-03-18 | 2018-09-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막, 반도체 장치, 및 반도체 장치의 제작 방법 |
| JP5560227B2 (ja) * | 2011-04-11 | 2014-07-23 | 株式会社ジャパンディスプレイ | 液晶表示装置の製造方法及び液晶表示装置 |
| JP5977569B2 (ja) * | 2011-04-22 | 2016-08-24 | 株式会社神戸製鋼所 | 薄膜トランジスタ構造、ならびにその構造を備えた薄膜トランジスタおよび表示装置 |
| US9105749B2 (en) | 2011-05-13 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5171990B2 (ja) * | 2011-05-13 | 2013-03-27 | 株式会社神戸製鋼所 | Ｃｕ合金膜および表示装置 |
| TWI500161B (zh) * | 2011-06-02 | 2015-09-11 | Au Optronics Corp | 混合式薄膜電晶體及其製造方法以及顯示面板 |
| US9166055B2 (en) | 2011-06-17 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8673426B2 (en) * | 2011-06-29 | 2014-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit |
| US9130044B2 (en) | 2011-07-01 | 2015-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9214474B2 (en) | 2011-07-08 | 2015-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US8952377B2 (en) | 2011-07-08 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9012993B2 (en) * | 2011-07-22 | 2015-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5794013B2 (ja) * | 2011-07-22 | 2015-10-14 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
| KR101506303B1 (ko) * | 2011-09-29 | 2015-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제작 방법 |
| US8716708B2 (en) | 2011-09-29 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US20140252355A1 (en) * | 2011-10-21 | 2014-09-11 | Sharp Kabushiki Kaisha | Semiconductor device and method for producing same |
| JP6122275B2 (ja) | 2011-11-11 | 2017-04-26 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP6076038B2 (ja) | 2011-11-11 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| WO2013073619A1 (ja) * | 2011-11-18 | 2013-05-23 | シャープ株式会社 | 半導体装置、表示装置、ならびに半導体装置の製造方法 |
| TWI497689B (zh) | 2011-12-02 | 2015-08-21 | Ind Tech Res Inst | 半導體元件及其製造方法 |
| TWI580047B (zh) | 2011-12-23 | 2017-04-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| KR101308809B1 (ko) * | 2012-01-20 | 2013-09-13 | 경희대학교 산학협력단 | 산화물 반도체 박막 트랜지스터 제조방법 및 이를 이용한 능동구동 디스플레이 장치, 능동구동 센서장치 |
| US9040981B2 (en) * | 2012-01-20 | 2015-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9419146B2 (en) | 2012-01-26 | 2016-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI562361B (en) | 2012-02-02 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| CN102709237B (zh) * | 2012-03-05 | 2014-06-25 | 京东方科技集团股份有限公司 | 薄膜场效应晶体管阵列基板及其制造方法、电子器件 |
| US8901556B2 (en) * | 2012-04-06 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Insulating film, method for manufacturing semiconductor device, and semiconductor device |
| KR20230004930A (ko) | 2012-04-13 | 2023-01-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR102295737B1 (ko) | 2012-05-10 | 2021-09-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 디바이스 |
| JP2013238718A (ja) * | 2012-05-15 | 2013-11-28 | Panasonic Corp | 半導体装置及び半導体装置の製造方法 |
| CN107591316B (zh) * | 2012-05-31 | 2021-06-08 | 株式会社半导体能源研究所 | 半导体装置 |
| WO2013179922A1 (en) | 2012-05-31 | 2013-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR20130136063A (ko) * | 2012-06-04 | 2013-12-12 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 그 제조 방법 |
| JP6002088B2 (ja) * | 2012-06-06 | 2016-10-05 | 株式会社神戸製鋼所 | 薄膜トランジスタ |
| US9153699B2 (en) * | 2012-06-15 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with multiple oxide semiconductor layers |
| US8901557B2 (en) | 2012-06-15 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9059219B2 (en) | 2012-06-27 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| JP6134598B2 (ja) | 2012-08-02 | 2017-05-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2014021442A1 (en) | 2012-08-03 | 2014-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor stacked film and semiconductor device |
| CN108054175A (zh) | 2012-08-03 | 2018-05-18 | 株式会社半导体能源研究所 | 半导体装置 |
| KR20140026257A (ko) * | 2012-08-23 | 2014-03-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| DE102013216824B4 (de) | 2012-08-28 | 2024-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
| TWI611511B (zh) | 2012-08-31 | 2018-01-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| US9018624B2 (en) | 2012-09-13 | 2015-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic appliance |
| KR102400509B1 (ko) | 2012-09-13 | 2022-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| WO2014046031A1 (ja) * | 2012-09-21 | 2014-03-27 | シャープ株式会社 | 半導体装置及び表示装置 |
| WO2014061567A1 (en) | 2012-10-17 | 2014-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
| TWI782259B (zh) | 2012-10-24 | 2022-11-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US9287411B2 (en) | 2012-10-24 | 2016-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI620323B (zh) | 2012-11-16 | 2018-04-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| US9153649B2 (en) | 2012-11-30 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for evaluating semiconductor device |
| JP2014135478A (ja) | 2012-12-03 | 2014-07-24 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| KR102798241B1 (ko) | 2012-12-25 | 2025-04-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2014103901A1 (en) | 2012-12-25 | 2014-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9905585B2 (en) | 2012-12-25 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising capacitor |
| JP6329762B2 (ja) | 2012-12-28 | 2018-05-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102495290B1 (ko) | 2012-12-28 | 2023-02-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR20140088810A (ko) * | 2013-01-03 | 2014-07-11 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| US9391096B2 (en) | 2013-01-18 | 2016-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI618252B (zh) | 2013-02-12 | 2018-03-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| US9231111B2 (en) | 2013-02-13 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6068748B2 (ja) * | 2013-03-13 | 2017-01-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2014203059A (ja) * | 2013-04-10 | 2014-10-27 | セイコーエプソン株式会社 | 容量素子、容量素子の製造方法、半導体装置、電気光学装置、及び電子機器 |
| US10304859B2 (en) | 2013-04-12 | 2019-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide film on an oxide semiconductor film |
| US9231002B2 (en) | 2013-05-03 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| TWI627751B (zh) | 2013-05-16 | 2018-06-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| TWI639235B (zh) | 2013-05-16 | 2018-10-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| KR102290801B1 (ko) * | 2013-06-21 | 2021-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| US9818763B2 (en) | 2013-07-12 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing display device |
| CN104460143B (zh) * | 2013-09-17 | 2017-12-15 | 瀚宇彩晶股份有限公司 | 像素结构及其制造方法 |
| JP2015060996A (ja) * | 2013-09-19 | 2015-03-30 | 株式会社東芝 | 表示装置及び半導体装置 |
| TWI545373B (zh) * | 2013-09-25 | 2016-08-11 | 群創光電股份有限公司 | 自發光顯示元件 |
| JPWO2015045213A1 (ja) * | 2013-09-30 | 2017-03-09 | 株式会社Ｊｏｌｅｄ | 薄膜トランジスタ基板及びその製造方法 |
| US9590111B2 (en) | 2013-11-06 | 2017-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
| KR20160091968A (ko) * | 2013-11-29 | 2016-08-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 반도체 장치를 제작하는 방법, 및 표시 장치 |
| KR102220450B1 (ko) * | 2013-12-02 | 2021-02-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| US9601634B2 (en) | 2013-12-02 | 2017-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9991392B2 (en) | 2013-12-03 | 2018-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP6537264B2 (ja) | 2013-12-12 | 2019-07-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9349751B2 (en) | 2013-12-12 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI721409B (zh) | 2013-12-19 | 2021-03-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| US9704888B2 (en) | 2014-01-08 | 2017-07-11 | Apple Inc. | Display circuitry with reduced metal routing resistance |
| US9530801B2 (en) | 2014-01-13 | 2016-12-27 | Apple Inc. | Display circuitry with improved transmittance and reduced coupling capacitance |
| JP2015188062A (ja) | 2014-02-07 | 2015-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102172972B1 (ko) | 2014-02-26 | 2020-11-03 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 그의 제조방법 |
| KR102332469B1 (ko) * | 2014-03-28 | 2021-11-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 및 반도체 장치 |
| TWI663726B (zh) | 2014-05-30 | 2019-06-21 | Semiconductor Energy Laboratory Co., Ltd. | 半導體裝置、模組及電子裝置 |
| TWI666776B (zh) * | 2014-06-20 | 2019-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置以及包括該半導體裝置的顯示裝置 |
| CN104347643B (zh) | 2014-09-04 | 2017-07-28 | 上海天马微电子有限公司 | 驱动电路及其形成方法、有机发光显示装置及其形成方法 |
| US20160155759A1 (en) * | 2014-11-28 | 2016-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
| US9633710B2 (en) | 2015-01-23 | 2017-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for operating semiconductor device |
| CN104659067B (zh) * | 2015-02-06 | 2018-12-18 | 京东方科技集团股份有限公司 | 一种显示基板及其制备方法和一种显示设备 |
| TWI540371B (zh) * | 2015-03-03 | 2016-07-01 | 群創光電股份有限公司 | 顯示面板及顯示裝置 |
| US9964799B2 (en) * | 2015-03-17 | 2018-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module, and electronic device |
| KR20160114511A (ko) | 2015-03-24 | 2016-10-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| US10096715B2 (en) | 2015-03-26 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, and electronic device |
| US9806200B2 (en) | 2015-03-27 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN104752489A (zh) * | 2015-04-10 | 2015-07-01 | 深圳市华星光电技术有限公司 | 阵列基板、显示装置及用于制备阵列基板的方法 |
| US10890761B2 (en) * | 2015-04-24 | 2021-01-12 | University-Industry Cooperation Group Of Kyung Hee University | Photoreactive sensor including optical amplification phototransistor, and display panel and vehicle control system including photoreactive sensor |
| KR20180010205A (ko) | 2015-05-22 | 2018-01-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치 |
| CN106409919A (zh) | 2015-07-30 | 2017-02-15 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
| US10714633B2 (en) | 2015-12-15 | 2020-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
| CN105470205B (zh) * | 2015-12-24 | 2018-09-07 | 上海天马有机发光显示技术有限公司 | 一种多层低温多晶硅薄膜晶体管（ltps-tft）制造方法 |
| US20170213872A1 (en) * | 2016-01-27 | 2017-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR20180123028A (ko) | 2016-03-11 | 2018-11-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장비, 상기 반도체 장치의 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치 |
| KR102330605B1 (ko) | 2016-06-22 | 2021-11-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2018043426A1 (ja) * | 2016-09-05 | 2018-03-08 | シャープ株式会社 | アクティブマトリクス基板およびその製造方法 |
| WO2018130899A1 (en) * | 2017-01-11 | 2018-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| CN107293553B (zh) * | 2017-06-19 | 2020-11-24 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示面板和显示装置 |
| JP7019459B2 (ja) * | 2018-03-02 | 2022-02-15 | 株式会社ジャパンディスプレイ | 表示装置 |
| US10879329B2 (en) * | 2018-03-29 | 2020-12-29 | Joled Inc. | Semiconductor device, semiconductor substrate, luminescent unit, and display unit |
| US10957716B2 (en) * | 2018-09-12 | 2021-03-23 | Sharp Kabushiki Kaisha | Array substrate, liquid crystal display panel, and organic electroluminescence display panel |
| TWI702457B (zh) | 2019-04-23 | 2020-08-21 | 元太科技工業股份有限公司 | 反射式主動元件陣列基板及其製作方法與反射式顯示裝置及其製作方法 |
| US11379231B2 (en) | 2019-10-25 | 2022-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Data processing system and operation method of data processing system |
| KR20210069835A (ko) * | 2019-12-04 | 2021-06-14 | 엘지디스플레이 주식회사 | 디스플레이 장치 |
| WO2021226868A1 (zh) * | 2020-05-13 | 2021-11-18 | 京东方科技集团股份有限公司 | 驱动基板及其制作方法、显示装置 |
| WO2022160255A1 (en) * | 2021-01-29 | 2022-08-04 | Boe Technology Group Co., Ltd. | Array substrate and display apparatus |
| CN113517387A (zh) * | 2021-03-02 | 2021-10-19 | 阿里巴巴新加坡控股有限公司 | 共面波导结构的制备方法、装置、设备以及超导器件 |
| JP2023007092A (ja) * | 2021-07-01 | 2023-01-18 | シャープディスプレイテクノロジー株式会社 | アクティブマトリクス基板およびその製造方法 |
Family Cites Families (146)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60160173A (ja) * | 1984-01-30 | 1985-08-21 | Sharp Corp | 薄膜トランジスタ |
| JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
| JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法 |
| JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
| JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
| EP0820644B1 (en) | 1995-08-03 | 2005-08-24 | Koninklijke Philips Electronics N.V. | Semiconductor device provided with transparent switching element |
| JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
| JPH1140814A (ja) * | 1997-07-18 | 1999-02-12 | Furontetsuku:Kk | 薄膜トランジスタ基板と液晶表示装置および薄膜トランジスタ基板の製造方法 |
| JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Ｈｏｙａ株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
| JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
| JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
| JP2000357586A (ja) | 1999-06-15 | 2000-12-26 | Sharp Corp | 薄膜ｅｌ素子の製造方法および薄膜ｅｌ素子 |
| TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
| JP2001324725A (ja) * | 2000-05-12 | 2001-11-22 | Hitachi Ltd | 液晶表示装置およびその製造方法 |
| WO2002016679A1 (en) | 2000-08-18 | 2002-02-28 | Tohoku Techno Arch Co., Ltd. | Polycrystalline semiconductor material and method of manufacture thereof |
| JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
| JP2002162646A (ja) | 2000-09-14 | 2002-06-07 | Sony Corp | 反射型液晶表示装置 |
| KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
| JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
| JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
| JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
| JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
| WO2003040441A1 (fr) | 2001-11-05 | 2003-05-15 | Japan Science And Technology Agency | Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin |
| JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
| JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法 |
| CN1445821A (zh) | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
| JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
| US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
| JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
| US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
| US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
| JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
| JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
| JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
| US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
| US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
| CN1998087B (zh) | 2004-03-12 | 2014-12-31 | 独立行政法人科学技术振兴机构 | 非晶形氧化物和薄膜晶体管 |
| US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
| US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
| US7642038B2 (en) | 2004-03-24 | 2010-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming pattern, thin film transistor, display device, method for manufacturing thereof, and television apparatus |
| US7629633B2 (en) | 2004-05-20 | 2009-12-08 | Isaac Wing Tak Chan | Vertical thin film transistor with short-channel effect suppression |
| US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
| JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
| US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
| US7382421B2 (en) | 2004-10-12 | 2008-06-03 | Hewlett-Packard Development Company, L.P. | Thin film transistor with a passivation layer |
| US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
| US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
| US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
| US7868326B2 (en) | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
| US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
| KR20070085879A (ko) | 2004-11-10 | 2007-08-27 | 캐논 가부시끼가이샤 | 발광 장치 |
| CA2585190A1 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
| US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
| US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
| GB0501733D0 (en) | 2005-01-27 | 2005-03-02 | British American Tobacco Co | Packages |
| TWI569441B (zh) | 2005-01-28 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置，電子裝置，和半導體裝置的製造方法 |
| TWI472037B (zh) | 2005-01-28 | 2015-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置，電子裝置，和半導體裝置的製造方法 |
| US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
| US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
| US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
| US7544967B2 (en) | 2005-03-28 | 2009-06-09 | Massachusetts Institute Of Technology | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
| US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
| US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
| JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
| US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| KR20060133652A (ko) * | 2005-06-21 | 2006-12-27 | 삼성전자주식회사 | 마스크 및 이를 이용한 박막트랜지스터 기판의 제조방법 |
| US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
| KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
| JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機ｅｌ表示装置およびその製造方法 |
| JP4870403B2 (ja) | 2005-09-02 | 2012-02-08 | 財団法人高知県産業振興センター | 薄膜トランジスタの製法 |
| TWI345313B (en) | 2005-09-05 | 2011-07-11 | Au Optronics Corp | Thin film transistor and method of manufacturing the same |
| JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
| JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
| JP2007073705A (ja) * | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
| JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
| KR100786498B1 (ko) * | 2005-09-27 | 2007-12-17 | 삼성에스디아이 주식회사 | 투명박막 트랜지스터 및 그 제조방법 |
| JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
| JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| EP1998373A3 (en) | 2005-09-29 | 2012-10-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
| WO2007058329A1 (en) | 2005-11-15 | 2007-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
| US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
| JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法 |
| US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
| US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
| KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ＺｎＯ ＴＦＴ |
| US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
| JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| KR100787455B1 (ko) * | 2006-08-09 | 2007-12-26 | 삼성에스디아이 주식회사 | 투명 박막 트랜지스터의 제조방법 |
| JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Ｎｅｃ液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
| JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
| JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
| US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
| US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
| JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーｅｌディスプレイおよびその製造方法 |
| KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
| US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
| JP5196870B2 (ja) | 2007-05-23 | 2013-05-15 | キヤノン株式会社 | 酸化物半導体を用いた電子素子及びその製造方法 |
| US8436349B2 (en) | 2007-02-20 | 2013-05-07 | Canon Kabushiki Kaisha | Thin-film transistor fabrication process and display device |
| KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
| JP4727684B2 (ja) * | 2007-03-27 | 2011-07-20 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよびそれを用いた表示装置 |
| JP2008276212A (ja) * | 2007-04-05 | 2008-11-13 | Fujifilm Corp | 有機電界発光表示装置 |
| WO2008126879A1 (en) * | 2007-04-09 | 2008-10-23 | Canon Kabushiki Kaisha | Light-emitting apparatus and production method thereof |
| JP5197058B2 (ja) | 2007-04-09 | 2013-05-15 | キヤノン株式会社 | 発光装置とその作製方法 |
| US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
| KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
| KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
| KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
| CN101663762B (zh) | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
| JP5215589B2 (ja) | 2007-05-11 | 2013-06-19 | キヤノン株式会社 | 絶縁ゲート型トランジスタ及び表示装置 |
| KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ＺｎＯ 계 박막 트랜지스터 및 그 제조방법 |
| JP5406449B2 (ja) * | 2007-05-30 | 2014-02-05 | キヤノン株式会社 | 酸化物半導体を用いた薄膜トランジスタの製造方法および表示装置 |
| KR101092483B1 (ko) | 2007-05-31 | 2011-12-13 | 캐논 가부시끼가이샤 | 산화물 반도체를 사용한 박막트랜지스터의 제조 방법 |
| TWI453915B (zh) * | 2007-09-10 | 2014-09-21 | Idemitsu Kosan Co | Thin film transistor |
| KR101375831B1 (ko) * | 2007-12-03 | 2014-04-02 | 삼성전자주식회사 | 산화물 반도체 박막 트랜지스터를 이용한 디스플레이 장치 |
| JP5213422B2 (ja) * | 2007-12-04 | 2013-06-19 | キヤノン株式会社 | 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置 |
| JP5215158B2 (ja) | 2007-12-17 | 2013-06-19 | 富士フイルム株式会社 | 無機結晶性配向膜及びその製造方法、半導体デバイス |
| JP4555358B2 (ja) | 2008-03-24 | 2010-09-29 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよび表示装置 |
| KR20090124527A (ko) * | 2008-05-30 | 2009-12-03 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| KR100963027B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| KR100963026B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| KR100963104B1 (ko) | 2008-07-08 | 2010-06-14 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| TWI875442B (zh) | 2008-07-31 | 2025-03-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| JP2010040552A (ja) * | 2008-07-31 | 2010-02-18 | Idemitsu Kosan Co Ltd | 薄膜トランジスタ及びその製造方法 |
| JP5608347B2 (ja) | 2008-08-08 | 2014-10-15 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
| JP5345456B2 (ja) | 2008-08-14 | 2013-11-20 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタ |
| US8129718B2 (en) | 2008-08-28 | 2012-03-06 | Canon Kabushiki Kaisha | Amorphous oxide semiconductor and thin film transistor using the same |
| US9082857B2 (en) | 2008-09-01 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor layer |
| JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
| JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
| TWI549198B (zh) | 2008-12-26 | 2016-09-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| EP2256814B1 (en) | 2009-05-29 | 2019-01-16 | Semiconductor Energy Laboratory Co, Ltd. | Oxide semiconductor device and method for manufacturing the same |
| WO2011013523A1 (en) | 2009-07-31 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2011013502A1 (en) | 2009-07-31 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR102362616B1 (ko) | 2009-07-31 | 2022-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| KR20120051727A (ko) | 2009-07-31 | 2012-05-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 디바이스 및 그 형성 방법 |
-
2010
- 2010-07-20 CN CN201080033956.1A patent/CN102473734B/zh active Active
- 2010-07-20 WO PCT/JP2010/062484 patent/WO2011013596A1/en not_active Ceased
- 2010-07-20 CN CN201510408060.1A patent/CN105097946B/zh active Active
- 2010-07-20 KR KR1020127004828A patent/KR101967480B1/ko active Active
- 2010-07-20 KR KR1020197009364A patent/KR102153841B1/ko not_active Expired - Fee Related
- 2010-07-26 JP JP2010167343A patent/JP5700762B2/ja active Active
- 2010-07-29 US US12/846,556 patent/US8421083B2/en active Active
- 2010-07-29 TW TW104124900A patent/TWI525839B/zh active
- 2010-07-29 TW TW099125103A patent/TWI505474B/zh active
-
2012
- 2012-08-22 JP JP2012182883A patent/JP5216929B2/ja active Active
-
2013
- 2013-04-15 US US13/862,528 patent/US8937306B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2011049539A5 (enExample) | ||
| JP2011243973A5 (enExample) | ||
| JP2013016862A5 (enExample) | ||
| JP2011029628A5 (enExample) | ||
| JP2011243971A5 (enExample) | ||
| JP2011044698A5 (ja) | 半導体装置の作製方法 | |
| JP2011009728A5 (enExample) | ||
| JP2011103452A5 (enExample) | ||
| JP2011233880A5 (ja) | 半導体装置 | |
| JP2010080954A5 (enExample) | ||
| JP2011243975A5 (enExample) | ||
| JP2011040726A5 (enExample) | ||
| JP2011119706A5 (ja) | 半導体装置 | |
| JP2011100980A5 (ja) | 半導体装置 | |
| JP2011009724A5 (ja) | 半導体装置の作製方法 | |
| JP2011097103A5 (enExample) | ||
| JP2014013917A5 (enExample) | ||
| JP2017076823A5 (ja) | 液晶表示装置の作製方法 | |
| JP2011100981A5 (ja) | 半導体装置の作製方法 | |
| JP2011109080A5 (ja) | 半導体装置 | |
| JP2011097032A5 (ja) | 半導体装置の作製方法 | |
| JP2014179596A5 (enExample) | ||
| JP2011124561A5 (ja) | 半導体装置 | |
| JP2011049550A5 (ja) | 半導体装置 | |
| JP2012216834A5 (enExample) |