JP2010511261A5 - - Google Patents

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JP2010511261A5
JP2010511261A5 JP2009537461A JP2009537461A JP2010511261A5 JP 2010511261 A5 JP2010511261 A5 JP 2010511261A5 JP 2009537461 A JP2009537461 A JP 2009537461A JP 2009537461 A JP2009537461 A JP 2009537461A JP 2010511261 A5 JP2010511261 A5 JP 2010511261A5
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JP2009537461A
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JP5323713B2 (ja
JP2010511261A (ja
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JP2009537461A 2006-11-27 2007-11-26 不揮発性メモリのシリアルコアアーキテクチャ Expired - Fee Related JP5323713B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US86726906P 2006-11-27 2006-11-27
US60/867,269 2006-11-27
US11/944,535 US7817470B2 (en) 2006-11-27 2007-11-23 Non-volatile memory serial core architecture
US11/944,535 2007-11-23
PCT/CA2007/002125 WO2008064466A1 (en) 2006-11-27 2007-11-26 Non-volatile memory serial core architecture

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JP2010256685A Division JP5562809B2 (ja) 2006-11-27 2010-11-17 不揮発性メモリのシリアルコアアーキテクチャ

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JP2010511261A JP2010511261A (ja) 2010-04-08
JP2010511261A5 true JP2010511261A5 (OSRAM) 2011-01-13
JP5323713B2 JP5323713B2 (ja) 2013-10-23

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JP2009537461A Expired - Fee Related JP5323713B2 (ja) 2006-11-27 2007-11-26 不揮発性メモリのシリアルコアアーキテクチャ
JP2010256685A Expired - Fee Related JP5562809B2 (ja) 2006-11-27 2010-11-17 不揮発性メモリのシリアルコアアーキテクチャ
JP2014054990A Pending JP2014112461A (ja) 2006-11-27 2014-03-18 不揮発性メモリのシリアルコアアーキテクチャ

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JP2010256685A Expired - Fee Related JP5562809B2 (ja) 2006-11-27 2010-11-17 不揮発性メモリのシリアルコアアーキテクチャ
JP2014054990A Pending JP2014112461A (ja) 2006-11-27 2014-03-18 不揮発性メモリのシリアルコアアーキテクチャ

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US (5) US7817470B2 (OSRAM)
EP (3) EP2487685A1 (OSRAM)
JP (3) JP5323713B2 (OSRAM)
KR (3) KR101513786B1 (OSRAM)
CN (2) CN101553876B (OSRAM)
CA (1) CA2663414A1 (OSRAM)
ES (2) ES2489844T3 (OSRAM)
TW (1) TWI484492B (OSRAM)
WO (1) WO2008064466A1 (OSRAM)

Families Citing this family (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100675517B1 (ko) * 2005-09-09 2007-01-30 주식회사 엑셀반도체 시리얼 플래쉬 메모리 장치 및 프리차아지 방법
US7652922B2 (en) 2005-09-30 2010-01-26 Mosaid Technologies Incorporated Multiple independent serial link memory
EP1932158A4 (en) * 2005-09-30 2008-10-15 Mosaid Technologies Inc MEMORY WITH OUTPUT CONTROL
US7567461B2 (en) * 2006-08-18 2009-07-28 Micron Technology, Inc. Method and system for minimizing number of programming pulses used to program rows of non-volatile memory cells
US7817470B2 (en) 2006-11-27 2010-10-19 Mosaid Technologies Incorporated Non-volatile memory serial core architecture
US7706184B2 (en) * 2007-12-28 2010-04-27 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
KR100967001B1 (ko) * 2008-05-29 2010-06-30 주식회사 하이닉스반도체 불휘발성 메모리 소자의 프로그램 방법
KR100968155B1 (ko) * 2008-10-02 2010-07-06 주식회사 하이닉스반도체 반도체 메모리 장치
ITRM20080543A1 (it) * 2008-10-09 2010-04-10 Micron Technology Inc Architettura e metodo per la programmazione di memorie.
US8134852B2 (en) 2008-10-14 2012-03-13 Mosaid Technologies Incorporated Bridge device architecture for connecting discrete memory devices to a system
US7957173B2 (en) * 2008-10-14 2011-06-07 Mosaid Technologies Incorporated Composite memory having a bridging device for connecting discrete memory devices to a system
US8549209B2 (en) * 2008-11-04 2013-10-01 Mosaid Technologies Incorporated Bridging device having a configurable virtual page size
US7948821B2 (en) 2008-12-15 2011-05-24 Micron Technology, Inc. Reduced signal interface memory device, system, and method
US8036061B2 (en) * 2009-02-13 2011-10-11 Apple Inc. Integrated circuit with multiported memory supercell and data path switching circuitry
US8164974B2 (en) * 2009-02-24 2012-04-24 Taiwan Semiconductor Manufacturing Company, Ltd. Memory circuits, systems, and method of interleaving accesses thereof
US7894230B2 (en) * 2009-02-24 2011-02-22 Mosaid Technologies Incorporated Stacked semiconductor devices including a master device
KR101069114B1 (ko) * 2009-06-29 2011-09-30 주식회사 하이닉스반도체 불휘발성 메모리 소자
US8484428B2 (en) * 2009-07-30 2013-07-09 Micron Technology, Inc. Enhanced block copy
US8130543B2 (en) * 2009-08-13 2012-03-06 Macronix International Co., Ltd. Method and apparatus for increasing memory programming efficiency through dynamic switching of sense amplifiers
KR101060899B1 (ko) * 2009-12-23 2011-08-30 주식회사 하이닉스반도체 반도체 메모리 장치 및 이의 동작 방법
JP2011138569A (ja) * 2009-12-25 2011-07-14 Toshiba Corp 不揮発性半導体記憶装置
KR101062776B1 (ko) * 2010-01-29 2011-09-06 주식회사 하이닉스반도체 반도체 메모리 장치
KR101625641B1 (ko) * 2010-04-08 2016-05-30 삼성전자주식회사 비휘발성 메모리 장치, 이의 동작 방법 및 이를 포함하는 장치들
KR101085724B1 (ko) * 2010-05-10 2011-11-21 주식회사 하이닉스반도체 반도체 메모리 장치 및 그 동작 방법
KR101090410B1 (ko) * 2010-07-02 2011-12-06 주식회사 하이닉스반도체 반도체 메모리 장치
KR101190694B1 (ko) * 2011-03-04 2012-10-12 에스케이하이닉스 주식회사 반도체 메모리 장치
JP5653856B2 (ja) * 2011-07-21 2015-01-14 ルネサスエレクトロニクス株式会社 半導体装置
KR101917295B1 (ko) * 2011-10-27 2018-11-14 에스케이하이닉스 주식회사 반도체 메모리 장치
KR20130072521A (ko) * 2011-12-22 2013-07-02 에스케이하이닉스 주식회사 고전압 트랜지스터를 포함한 반도체 소자
CN102736996A (zh) * 2011-12-27 2012-10-17 华为技术有限公司 一种减少存储控制器接口占用的方法及高速存储器
US9323608B2 (en) 2012-06-07 2016-04-26 Micron Technology, Inc. Integrity of a data bus
TWI477961B (zh) * 2012-06-26 2015-03-21 Silicon Touch Tech Inc 應用於序列傳輸系統之晶片及相關的故障處理方法
JP2014049173A (ja) * 2012-09-04 2014-03-17 Toshiba Corp 半導体記憶装置
US20140075091A1 (en) * 2012-09-10 2014-03-13 Texas Instruments Incorporated Processing Device With Restricted Power Domain Wakeup Restore From Nonvolatile Logic Array
KR102062301B1 (ko) * 2013-01-03 2020-01-03 삼성전자주식회사 메모리 장치의 페이지 복사 방법 및 메모리 시스템의 페이지 관리 방법
KR102166731B1 (ko) * 2013-05-31 2020-10-16 에스케이하이닉스 주식회사 데이터 전달회로 및 이를 포함하는 메모리
US9558114B2 (en) * 2013-06-03 2017-01-31 Infineon Technologies Ag System and method to store data in an adjustably partitionable memory array
KR20140142960A (ko) * 2013-06-05 2014-12-15 중소기업은행 병렬 파이프라인 더블래치로 구동되는 spi 낸드 플래시 메모리
KR20140146369A (ko) * 2013-06-17 2014-12-26 에스케이하이닉스 주식회사 반도체 메모리 장치 및 메모리 시스템
KR101478050B1 (ko) * 2013-07-30 2015-01-06 (주)피델릭스 프로그램 오동작을 저감하는 노어형 플래시 메모리 장치
JP5678151B1 (ja) * 2013-09-18 2015-02-25 力晶科技股▲ふん▼有限公司 不揮発性半導体記憶装置とその制御方法
KR20150038825A (ko) * 2013-09-30 2015-04-09 에스케이하이닉스 주식회사 반도체 집적회로
US9019780B1 (en) 2013-10-08 2015-04-28 Ememory Technology Inc. Non-volatile memory apparatus and data verification method thereof
KR102238176B1 (ko) * 2014-04-16 2021-04-12 삼성전자주식회사 단일 와이어 프로토콜 통신에서의 데이터 통신 방법 및 그에 따른 단일 와이어 프로토콜 통신 시스템
ES2774306T3 (es) 2014-07-30 2020-07-20 Hewlett Packard Development Co Banco de memoria dividido
JP2016063490A (ja) * 2014-09-19 2016-04-25 株式会社東芝 再構成可能な半導体集積回路および電子機器
US9373397B1 (en) * 2014-12-04 2016-06-21 Sony Corporation Page programming sequences and assignment schemes for a memory device
CN104506456A (zh) * 2014-12-26 2015-04-08 上海斐讯数据通信技术有限公司 限制交换机入口丢包的方法
KR102377453B1 (ko) * 2015-11-05 2022-03-23 삼성전자주식회사 불 휘발성 메모리 장치 및 그것의 동작 방법
KR102505852B1 (ko) 2016-01-15 2023-03-03 삼성전자 주식회사 비휘발성 메모리 장치의 동작 방법
US10665302B2 (en) 2016-01-15 2020-05-26 Samsung Electroncis Co., Ltd. Non-volatile memory device and operating method thereof
US9841922B2 (en) * 2016-02-03 2017-12-12 SK Hynix Inc. Memory system includes a memory controller
US9641161B1 (en) * 2016-05-02 2017-05-02 Taiwan Semiconductor Manufacturing Co., Ltd. Flip-flop with delineated layout for reduced footprint
KR102528971B1 (ko) * 2016-05-09 2023-05-08 에스케이하이닉스 주식회사 데이터 출력 회로 및 그를 포함하는 반도체 메모리 장치
JP6170596B1 (ja) * 2016-06-15 2017-07-26 ウィンボンド エレクトロニクス コーポレーション 半導体装置
US9871520B1 (en) * 2016-08-15 2018-01-16 Xilinx, Inc. Voting circuit and self-correcting latches
JP6164712B1 (ja) 2016-08-18 2017-07-19 ウィンボンド エレクトロニクス コーポレーション フラッシュメモリ
JP6178909B1 (ja) * 2016-09-15 2017-08-09 ウィンボンド エレクトロニクス コーポレーション 不揮発性半導体記憶装置
KR102684558B1 (ko) * 2016-12-28 2024-07-15 에스케이하이닉스 주식회사 반도체 장치 및 반도체 시스템
US11024361B2 (en) * 2017-01-06 2021-06-01 Qualcomm Incorporated Coincident memory bank access via cross connected shared bank resources
KR102663814B1 (ko) * 2017-02-06 2024-05-07 삼성전자주식회사 비휘발성 메모리 장치
KR102799068B1 (ko) * 2017-02-09 2025-04-23 에스케이하이닉스 주식회사 저장 장치 및 그 동작 방법
KR102219290B1 (ko) 2017-03-22 2021-02-23 삼성전자 주식회사 비휘발성 메모리 장치
US10607692B2 (en) * 2017-06-29 2020-03-31 SK Hynix Inc. Serializer and memory device including the same
US10419574B2 (en) 2017-08-23 2019-09-17 Micron Technology, Inc. Memory device with a multi-mode communication mechanism
US10453533B2 (en) * 2017-11-17 2019-10-22 Micron Technology, Inc. Memory devices with distributed block select for a vertical string driver tile architecture
IT201800000632A1 (it) * 2018-01-09 2019-07-09 St Microelectronics Srl Dispositivo per commutare tra diverse modalita' di lettura di una memoria non volatile e metodo di lettura di una memoria non volatile
JP7020991B2 (ja) * 2018-05-01 2022-02-16 株式会社東芝 信号制御回路
KR102442337B1 (ko) * 2018-05-14 2022-09-13 삼성전자주식회사 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 동작 방법
US10636459B2 (en) * 2018-05-30 2020-04-28 Micron Technology, Inc. Wear leveling
CN110688024B (zh) * 2018-07-04 2023-05-26 鸿富锦精密工业（深圳）有限公司 移位寄存器及具有移位寄存器的触控显示装置
US10714166B2 (en) * 2018-08-13 2020-07-14 Micron Technology, Inc. Apparatus and methods for decoding memory access addresses for access operations
KR102555452B1 (ko) * 2018-08-16 2023-07-17 에스케이하이닉스 주식회사 반도체 메모리 장치, 이의 동작 방법 및 이를 포함하는 시스템
KR102617801B1 (ko) * 2018-10-24 2023-12-27 에스케이하이닉스 주식회사 메모리 장치 및 그의 리드 동작 방법
US10817420B2 (en) * 2018-10-30 2020-10-27 Arm Limited Apparatus and method to access a memory location
WO2020132277A1 (en) * 2018-12-19 2020-06-25 Micron Technology, Inc. Memory devices, modules and systems having memory devices with varying physical dimensions, memory formats, and operational capabilities
KR102697046B1 (ko) * 2019-02-11 2024-08-20 삼성전자주식회사 비휘발성 메모리 장치
FR3103584B1 (fr) 2019-11-22 2023-05-05 St Microelectronics Alps Sas Procédé de gestion du débogage d’un système sur puce formant par exemple un microcontrôleur, et système sur puce correspondant
US12373374B2 (en) 2019-11-22 2025-07-29 STMicroelectronics (Grand Ouest) SAS Method for managing the operation of a system on chip, and corresponding system on chip
FR3103585B1 (fr) * 2019-11-22 2023-04-14 Stmicroelectronics Grand Ouest Sas Procédé de gestion de la configuration d’accès à des périphériques et à leurs ressources associées d’un système sur puce formant par exemple un microcontrôleur, et système sur puce correspondant
FR3103586B1 (fr) 2019-11-22 2023-04-14 St Microelectronics Alps Sas Procédé de gestion du fonctionnement d’un système sur puce formant par exemple un microcontrôleur, et système sur puce correspondant
CN111161769B (zh) * 2019-12-30 2020-10-20 深圳市芯天下技术有限公司 Flash芯片及其读方法
CN111192615B (zh) * 2019-12-31 2022-11-01 杭州士兰微电子股份有限公司 可编程存储单元、非易失性存储系统及其控制方法
US11538506B2 (en) * 2020-07-21 2022-12-27 Samsung Electronics Co., Ltd. Semiconductor device and semiconductor package including the semiconductor device
US11114180B1 (en) 2020-08-17 2021-09-07 Winbond Electronics Corp. Non-volatile memory device
CN112154505B (zh) * 2020-08-27 2022-09-30 长江存储科技有限责任公司 Nand闪存设备中的非破坏性模式高速缓存编程
US11894075B2 (en) 2020-08-27 2024-02-06 Yangtze Memory Technologies Co. Ltd. Non-destructive mode cache programming in NAND flash memory devices
KR102811178B1 (ko) * 2020-10-30 2025-05-21 에스케이하이닉스 주식회사 웨이퍼 대 웨이퍼 본딩 구조를 갖는 메모리 장치
WO2022126418A1 (en) 2020-12-16 2022-06-23 Yangtze Memory Technologies Co., Ltd. Page buffer circuit with bit line select transistor
US11600307B2 (en) 2020-12-29 2023-03-07 Qualcomm Incorporated Memory circuit architecture
CN112949229B (zh) * 2021-03-30 2024-08-20 中国科学院上海微系统与信息技术研究所 超导高速存储器
US12099439B2 (en) * 2021-08-02 2024-09-24 Nvidia Corporation Performing load and store operations of 2D arrays in a single cycle in a system on a chip
US12199645B2 (en) 2022-01-10 2025-01-14 Changxin Memory Technologies, Inc. Parallel-to-serial conversion circuit, parallel-to-serial conversion circuit layout, and memory
US12047069B2 (en) * 2022-01-10 2024-07-23 Changxin Memory Technologies, Inc. Parallel-to-serial conversion circuit, parallel-to-serial conversion circuit layout, and memory
KR102726040B1 (ko) * 2022-08-05 2024-11-05 주식회사 피델릭스 글로벌 데이터 라인의 부하를 저감하여 전류 소모를 감소하는 반도체 메모리 장치
KR20240149291A (ko) * 2023-04-05 2024-10-14 삼성전자주식회사 멀티-비트 셀 및 그것을 포함하는 멀티 비트 셀 어레이
CN116597878B (zh) * 2023-07-17 2023-12-01 长鑫存储技术有限公司 数据处理电路及存储器
CN119179447B (zh) * 2024-11-22 2025-04-08 珠海市芯动力科技有限公司 高带宽闪速存储器、数据读取方法及存储芯片

Family Cites Families (126)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4174536A (en) * 1977-01-21 1979-11-13 Massachusetts Institute Of Technology Digital communications controller with firmware control
JPS6196591A (ja) * 1984-10-17 1986-05-15 Fujitsu Ltd 半導体記憶装置
EP0179605B1 (en) * 1984-10-17 1992-08-19 Fujitsu Limited Semiconductor memory device having a serial data input circuit and a serial data output circuit
JPS61117954A (ja) 1984-11-12 1986-06-05 Dainichi Nippon Cables Ltd 中継器用フア−ストイン・フア−ストアウト回路
US4683555A (en) * 1985-01-22 1987-07-28 Texas Instruments Incorporated Serial accessed semiconductor memory with reconfigureable shift registers
US5170157A (en) * 1986-05-20 1992-12-08 Takatoshi Ishii Memory device for an image display apparatus having a serial port and independently operable data registers
US4800530A (en) * 1986-08-19 1989-01-24 Kabushiki Kasiha Toshiba Semiconductor memory system with dynamic random access memory cells
US5280448A (en) 1987-11-18 1994-01-18 Sony Corporation Dynamic memory with group bit lines and associated bit line group selector
JP2895488B2 (ja) * 1988-04-18 1999-05-24 株式会社東芝 半導体記憶装置及び半導体記憶システム
US4883374A (en) 1988-05-03 1989-11-28 The Torrington Company Thrust bearing assembly
WO1990010903A1 (fr) * 1989-03-15 1990-09-20 Oki Electric Industry Co., Ltd. Circuit recepteur de donnees serielles
US5126808A (en) * 1989-10-23 1992-06-30 Advanced Micro Devices, Inc. Flash EEPROM array with paged erase architecture
DE68925361T2 (de) 1989-10-30 1996-07-25 Philips Electronics Nv Direktzugriffsspeicher mit Seitenadressierungsmodus
US5175819A (en) * 1990-03-28 1992-12-29 Integrated Device Technology, Inc. Cascadable parallel to serial converter using tap shift registers and data shift registers while receiving input data from FIFO buffer
JPH03294946A (ja) * 1990-04-12 1991-12-26 Mitsubishi Electric Corp 記憶制御装置
US5243703A (en) * 1990-04-18 1993-09-07 Rambus, Inc. Apparatus for synchronously generating clock signals in a data processing system
JPH0498680A (ja) * 1990-08-13 1992-03-31 Matsushita Electron Corp 半導体記憶装置
US6249481B1 (en) * 1991-10-15 2001-06-19 Kabushiki Kaisha Toshiba Semiconductor memory device
US5319598A (en) * 1990-12-10 1994-06-07 Hughes Aircraft Company Nonvolatile serially programmable devices
US5430859A (en) * 1991-07-26 1995-07-04 Sundisk Corporation Solid state memory system including plural memory chips and a serialized bus
US6230233B1 (en) 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
KR950000761B1 (ko) * 1992-01-15 1995-01-28 삼성전자 주식회사 직렬 입력신호의 동기회로
KR950000273B1 (ko) * 1992-02-21 1995-01-12 삼성전자 주식회사 불휘발성 반도체 메모리장치 및 그 최적화 기입방법
JP3088180B2 (ja) * 1992-03-26 2000-09-18 日本電気アイシーマイコンシステム株式会社 シリアル入力インタフェース回路
JPH065085A (ja) * 1992-06-17 1994-01-14 Toshiba Corp 不揮発性半導体記憶装置
KR960000616B1 (ko) * 1993-01-13 1996-01-10 삼성전자주식회사 불휘발성 반도체 메모리 장치
JPH06275069A (ja) * 1993-03-20 1994-09-30 Hitachi Ltd シリアルメモリ
US5365484A (en) * 1993-08-23 1994-11-15 Advanced Micro Devices, Inc. Independent array grounds for flash EEPROM array with paged erase architechture
JPH0793219A (ja) * 1993-09-20 1995-04-07 Olympus Optical Co Ltd 情報処理装置
US5602780A (en) * 1993-10-20 1997-02-11 Texas Instruments Incorporated Serial to parallel and parallel to serial architecture for a RAM based FIFO memory
US5452259A (en) * 1993-11-15 1995-09-19 Micron Technology Inc. Multiport memory with pipelined serial input
US5404460A (en) * 1994-01-28 1995-04-04 Vlsi Technology, Inc. Method for configuring multiple identical serial I/O devices to unique addresses through a serial bus
US5596724A (en) * 1994-02-04 1997-01-21 Advanced Micro Devices Input/output data port with a parallel and serial interface
DE69521741T2 (de) * 1994-05-03 2002-05-23 Sun Microsystems Inc Direktzugriffspeicher und System für Rasterpuffer
JPH0836886A (ja) * 1994-07-22 1996-02-06 Nec Kagoshima Ltd メモリ装置
US5740460A (en) * 1994-07-29 1998-04-14 Discovision Associates Arrangement for processing packetized data
DE4429433C1 (de) * 1994-08-19 1995-10-26 Siemens Ag Adreßzuordnungsverfahren
US5473566A (en) * 1994-09-12 1995-12-05 Cirrus Logic, Inc. Memory architecture and devices, systems and methods utilizing the same
KR0142367B1 (ko) * 1995-02-04 1998-07-15 김광호 열 리던던씨를 가지는 불휘발성 반도체 메모리의 소거 검증회로
US5636342A (en) * 1995-02-17 1997-06-03 Dell Usa, L.P. Systems and method for assigning unique addresses to agents on a system management bus
TW389909B (en) * 1995-09-13 2000-05-11 Toshiba Corp Nonvolatile semiconductor memory device and its usage
US5835935A (en) * 1995-09-13 1998-11-10 Lexar Media, Inc. Method of and architecture for controlling system data with automatic wear leveling in a semiconductor non-volatile mass storage memory
JP3693721B2 (ja) * 1995-11-10 2005-09-07 Ｎｅｃエレクトロニクス株式会社 フラッシュメモリ内蔵マイクロコンピュータ及びそのテスト方法
TW307869B (en) * 1995-12-20 1997-06-11 Toshiba Co Ltd Semiconductor memory
KR100211760B1 (ko) * 1995-12-28 1999-08-02 윤종용 멀티뱅크 구조를 갖는 반도체 메모리 장치의 데이타 입출력 경로 제어회로
KR0170723B1 (ko) * 1995-12-29 1999-03-30 김광호 단일 ras 신호에 의해 동시 동작이 가능한 이중 뱅크를 갖는 반도체 메모리 장치
US5828899A (en) * 1996-01-04 1998-10-27 Compaq Computer Corporation System for peripheral devices recursively generating unique addresses based on the number of devices connected dependent upon the relative position to the port
JPH09231740A (ja) * 1996-02-21 1997-09-05 Nec Corp 半導体記憶装置
US6066886A (en) * 1996-10-29 2000-05-23 United Microelectronics Semiconductor wafer in which redundant memory portion is shared by two neighboring semiconductor memory portions and is connected to the semiconductor memory portions
KR100187196B1 (ko) * 1996-11-05 1999-03-20 김광호 불휘발성 반도체 메모리 장치
US5941974A (en) * 1996-11-29 1999-08-24 Motorola, Inc. Serial interface with register selection which uses clock counting, chip select pulsing, and no address bits
KR100243335B1 (ko) * 1996-12-31 2000-02-01 김영환 독립적인 리프레쉬 수단을 가지는 데이지 체인 구조의 반도체 장치
KR100272037B1 (ko) * 1997-02-27 2000-12-01 니시무로 타이죠 불휘발성 반도체 기억 장치
GB2329792A (en) 1997-08-20 1999-03-31 Nokia Telecommunications Oy Identification signals enable a transceiver module to correctly configure itself to an attached functional module
JPH1166841A (ja) * 1997-08-22 1999-03-09 Mitsubishi Electric Corp 半導体記憶装置
KR100240873B1 (ko) 1997-08-26 2000-01-15 윤종용 송수신 겸용의 레지스터를 갖는 직렬인터페이스장치
JP4039532B2 (ja) * 1997-10-02 2008-01-30 株式会社ルネサステクノロジ 半導体集積回路装置
US5937425A (en) * 1997-10-16 1999-08-10 M-Systems Flash Disk Pioneers Ltd. Flash file system optimized for page-mode flash technologies
US6148364A (en) * 1997-12-30 2000-11-14 Netlogic Microsystems, Inc. Method and apparatus for cascading content addressable memory devices
US6002638A (en) * 1998-01-20 1999-12-14 Microchip Technology Incorporated Memory device having a switchable clock output and method therefor
DE19980546B4 (de) 1998-03-02 2011-01-27 Lexar Media, Inc., Fremont Flash-Speicherkarte mit erweiterter Betriebsmodus-Erkennung und benutzerfreundlichem Schnittstellensystem
US6085290A (en) * 1998-03-10 2000-07-04 Nexabit Networks, Llc Method of and apparatus for validating data read out of a multi port internally cached dynamic random access memory (AMPIC DRAM)
JP2000021200A (ja) * 1998-07-06 2000-01-21 Mitsubishi Electric Corp 半導体記憶装置
US6144576A (en) * 1998-08-19 2000-11-07 Intel Corporation Method and apparatus for implementing a serial memory architecture
US5995417A (en) * 1998-10-20 1999-11-30 Advanced Micro Devices, Inc. Scheme for page erase and erase verify in a non-volatile memory array
JP4601737B2 (ja) 1998-10-28 2010-12-22 株式会社東芝 メモリ混載ロジックｌｓｉ
JP2000149564A (ja) * 1998-10-30 2000-05-30 Mitsubishi Electric Corp 半導体記憶装置
US6304921B1 (en) * 1998-12-07 2001-10-16 Motorola Inc. System for serial peripheral interface with embedded addressing circuit for providing portion of an address for peripheral devices
JP4424770B2 (ja) * 1998-12-25 2010-03-03 株式会社ルネサステクノロジ 半導体記憶装置
KR100284742B1 (ko) * 1998-12-28 2001-04-02 윤종용 입출력 센스앰프의 개수가 최소화된 메모리장치
JP3940513B2 (ja) * 1999-01-11 2007-07-04 株式会社東芝 半導体記憶装置
JP3289701B2 (ja) * 1999-04-12 2002-06-10 日本電気株式会社 半導体記憶装置
JP3813758B2 (ja) * 1999-04-12 2006-08-23 エルピーダメモリ株式会社 半導体記憶装置
JP3298552B2 (ja) 1999-04-15 2002-07-02 日本電気株式会社 半導体記憶装置及び半導体記憶装置システム
JP3853537B2 (ja) * 1999-04-30 2006-12-06 株式会社日立製作所 半導体メモリファイルシステム
US6692489B1 (en) 1999-07-21 2004-02-17 Team Medical, Llc Electrosurgical mode conversion system
JP3376976B2 (ja) * 1999-10-18 2003-02-17 日本電気株式会社 半導体記憶装置
US6680904B1 (en) 1999-12-27 2004-01-20 Orckit Communications Ltd. Bi-directional chaining of network access ports
US20050160218A1 (en) 2004-01-20 2005-07-21 Sun-Teck See Highly integrated mass storage device with an intelligent flash controller
US6442098B1 (en) * 2000-02-08 2002-08-27 Alliance Semiconductor High performance multi-bank compact synchronous DRAM architecture
JP2001229076A (ja) * 2000-02-17 2001-08-24 Nec Corp 半導体装置、半導体装置の設計方法及び半導体装置の動作方法。
US6988154B2 (en) 2000-03-10 2006-01-17 Arc International Memory interface and method of interfacing between functional entities
US6816933B1 (en) 2000-05-17 2004-11-09 Silicon Laboratories, Inc. Serial device daisy chaining method and apparatus
US6535948B1 (en) * 2000-05-31 2003-03-18 Agere Systems Inc. Serial interface unit
US6317350B1 (en) * 2000-06-16 2001-11-13 Netlogic Microsystems, Inc. Hierarchical depth cascading of content addressable memory devices
US6754807B1 (en) 2000-08-31 2004-06-22 Stmicroelectronics, Inc. System and method for managing vertical dependencies in a digital signal processor
US6317352B1 (en) * 2000-09-18 2001-11-13 Intel Corporation Apparatus for implementing a buffered daisy chain connection between a memory controller and memory modules
US6853557B1 (en) 2000-09-20 2005-02-08 Rambus, Inc. Multi-channel memory architecture
US6658509B1 (en) 2000-10-03 2003-12-02 Intel Corporation Multi-tier point-to-point ring memory interface
FR2816751A1 (fr) 2000-11-15 2002-05-17 St Microelectronics Sa Memoire flash effacable par page
JP2002216483A (ja) * 2001-01-18 2002-08-02 Toshiba Corp 半導体記憶装置
US6718432B1 (en) 2001-03-22 2004-04-06 Netlogic Microsystems, Inc. Method and apparatus for transparent cascading of multiple content addressable memory devices
US6732221B2 (en) 2001-06-01 2004-05-04 M-Systems Flash Disk Pioneers Ltd Wear leveling of static areas in flash memory
US6996644B2 (en) 2001-06-06 2006-02-07 Conexant Systems, Inc. Apparatus and methods for initializing integrated circuit addresses
KR100387529B1 (ko) * 2001-06-11 2003-06-18 삼성전자주식회사 랜덤 억세스 가능한 메모리 셀 어레이를 갖는 불휘발성반도체 메모리 장치
KR100413762B1 (ko) 2001-07-02 2003-12-31 삼성전자주식회사 뱅크 수를 가변할 수 있는 반도체 장치 및 그 방법
US6928501B2 (en) 2001-10-15 2005-08-09 Silicon Laboratories, Inc. Serial device daisy chaining method and apparatus
US6763426B1 (en) 2001-12-27 2004-07-13 Cypress Semiconductor Corporation Cascadable content addressable memory (CAM) device and architecture
JP4204226B2 (ja) 2001-12-28 2009-01-07 日本テキサス・インスツルメンツ株式会社 デバイス識別方法、データ伝送方法、デバイス識別子付与装置、並びにデバイス
US6813207B2 (en) * 2002-01-11 2004-11-02 Kabushiki Kaisha Toshiba Semiconductor memory device
US6665224B1 (en) * 2002-05-22 2003-12-16 Infineon Technologies Ag Partial refresh for synchronous dynamic random access memory (SDRAM) circuits
US7073022B2 (en) * 2002-05-23 2006-07-04 International Business Machines Corporation Serial interface for a data storage array
US7062601B2 (en) 2002-06-28 2006-06-13 Mosaid Technologies Incorporated Method and apparatus for interconnecting content addressable memory devices
KR100499686B1 (ko) 2002-07-23 2005-07-07 주식회사 디지털웨이 메모리 확장 가능한 휴대용 플래쉬 메모리 장치
CA2396632A1 (en) 2002-07-31 2004-01-31 Mosaid Technologies Incorporated Cam diamond cascade architecture
KR100487539B1 (ko) 2002-09-02 2005-05-03 삼성전자주식회사 직렬 에이티에이 케이블과 연결되는 불휘발성 반도체메모리 장치
US7032039B2 (en) 2002-10-30 2006-04-18 Atmel Corporation Method for identification of SPI compatible serial memory devices
DE60229649D1 (de) 2002-11-28 2008-12-11 St Microelectronics Srl Nichtflüchtige Speicheranordnungsarchitektur, zum Beispiel vom Flash-Typ mit einer seriellen Übertragungsschnittstelle
KR100493884B1 (ko) 2003-01-09 2005-06-10 삼성전자주식회사 시리얼 플래시 메모리에서의 현지 실행을 위한 제어 장치및 그 방법, 이를 이용한 플래시 메모리 칩
KR100516301B1 (ko) * 2003-03-05 2005-09-21 주식회사 하이닉스반도체 플래시 메모리의 뱅크 분할 장치
US20040199721A1 (en) 2003-03-12 2004-10-07 Power Data Communication Co., Ltd. Multi-transmission interface memory card
JP2004326974A (ja) * 2003-04-25 2004-11-18 Toshiba Corp 半導体集積回路装置及びｉｃカード
JP4156985B2 (ja) * 2003-06-30 2008-09-24 株式会社東芝 半導体記憶装置
JP4156986B2 (ja) 2003-06-30 2008-09-24 株式会社東芝 不揮発性半導体記憶装置
JP4772350B2 (ja) 2004-03-25 2011-09-14 三星電子株式会社 カップリングノイズを減少させる半導体装置
US7102950B2 (en) * 2004-08-02 2006-09-05 Atmel Corporation Fuse data storage system using core memory
KR100705221B1 (ko) 2004-09-03 2007-04-06 에스티마이크로일렉트로닉스 엔.브이. 플래쉬 메모리 소자 및 이를 이용한 플래쉬 메모리 셀의소거 방법
US6950325B1 (en) 2004-10-07 2005-09-27 Winbond Electronics Corporation Cascade-connected ROM
JP4381278B2 (ja) * 2004-10-14 2009-12-09 株式会社東芝 不揮発性半導体記憶装置の制御方法
US7177190B2 (en) * 2004-11-26 2007-02-13 Aplus Flash Technology, Inc. Combination nonvolatile integrated memory system using a universal technology most suitable for high-density, high-flexibility and high-security sim-card, smart-card and e-passport applications
JP2006252624A (ja) * 2005-03-09 2006-09-21 Toshiba Corp 半導体記憶装置
US7233540B1 (en) * 2005-09-27 2007-06-19 Lsi Corporation Latch-based random access memory (LBRAM) with tri-state banking and contention avoidance
US7266021B1 (en) * 2005-09-27 2007-09-04 Lsi Corporation Latch-based random access memory (LBRAM) tri-state banking architecture
EP1932158A4 (en) * 2005-09-30 2008-10-15 Mosaid Technologies Inc MEMORY WITH OUTPUT CONTROL
US7652922B2 (en) 2005-09-30 2010-01-26 Mosaid Technologies Incorporated Multiple independent serial link memory
US7817470B2 (en) * 2006-11-27 2010-10-19 Mosaid Technologies Incorporated Non-volatile memory serial core architecture

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