JP2009224806A5 - - Google Patents
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- JP2009224806A5 JP2009224806A5 JP2009159623A JP2009159623A JP2009224806A5 JP 2009224806 A5 JP2009224806 A5 JP 2009224806A5 JP 2009159623 A JP2009159623 A JP 2009159623A JP 2009159623 A JP2009159623 A JP 2009159623A JP 2009224806 A5 JP2009224806 A5 JP 2009224806A5
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- 基板用の基板テーブルと、
放射線ビームを基板に投影する投影装置と、
基板の温度、前記投影装置の温度、または、前記基板の温度及び前記投影装置の温度の両方を測定するセンサと、
前記投影装置と前記基板との間のスペースに液体を供給する液体供給装置であって、測定された温度に基づいて前記基板、前記液体、及び前記投影装置の最終部材の温度を実質的に共通の目標温度に調整する温度制御器を含む液体供給装置と、を備えることを特徴とするリトグラフ装置。 - 前記温度制御器は、前記基板、前記液体、及び前記投影装置の最終部材の温度と、前記共通の目標温度との差を小さくするように前記液体の流量を調整する液体流速調整装置を含むことを特徴とする請求項1に記載のリトグラフ装置。
- 前記温度制御器は、前記基板、前記液体、及び前記投影装置の最終部材の温度と、前記共通の目標温度との差を小さくするように前記液体の温度を調整する液体温度調整装置を含むことを特徴とする請求項1または2に記載のリトグラフ装置。
- 前記温度制御器は、前記共通の目標温度に向けて収束させるPID制御器を含むことを特徴とする請求項1から3のいずれかに記載のリトグラフ装置。
- 前記共通の目標温度は、所定の値に設定されることを特徴とする請求項1から4のいずれかに記載のリトグラフ装置。
- 投影装置を使用して、パターン化された放射線ビームを液体を通じて基板に投影し、
基板の温度、前記投影装置の温度、または、前記基板の温度及び前記投影装置の温度の両方を測定し、
測定された温度に基づいて前記基板、前記液体、及び前記投影装置の最終部材の温度を実質的に共通の目標温度に調整することを含むことを特徴とするデバイス製造方法。 - 温度の調整は、前記基板、前記液体、及び前記投影装置の最終部材の温度と、前記共通の目標温度との差を小さくするように前記液体の流量を調整することを含むことを特徴とする請求項6に記載の方法。
- 温度の調整は、前記基板、前記液体、及び前記投影装置の最終部材の温度と、前記共通の目標温度との差を小さくするように前記液体の温度を調整することを含むことを特徴とする請求項6または7に記載の方法。
- 温度の調整は、前記共通の目標温度に向けて収束させるPID制御器を使用して実行されることを特徴とする請求項6から8のいずれかに記載の方法。
- 前記共通の目標温度は、所定の値に設定されることを特徴とする請求項6から9のいずれかに記載の方法。
- 基板用の基板テーブルと、
光学素子を備え、放射線ビームを基板に投影する投影装置と、
前記光学素子と前記基板との間のスペースに液体を供給する液体供給装置であって、前記光学素子の温度プロファイル、前記基板の温度プロファイル、または前記光学素子及び前記基板の両方の温度プロファイルを受け取り、受け取った温度プロファイルに基づいて前記光学素子、前記基板、及び前記液体の温度を実質的に共通の目標温度に調整する温度制御器を含む液体供給装置と、を備えることを特徴とするリトグラフ装置。 - 前記液体供給装置は液体温度調整装置を含み、前記温度制御器は前記光学素子、前記基板、及び前記液体の温度を調整するよう前記液体温度調整装置の動作を制御することを特徴とする請求項11に記載のリトグラフ装置。
- 前記液体供給装置は液体流速調整装置を含み、前記温度制御器は前記光学素子、前記基板、及び前記液体の温度を調整するよう前記液体流速調整装置の動作を制御することを特徴とする請求項11または12に記載のリトグラフ装置。
- 前記温度制御器は、PID制御器を含むことを特徴とする請求項11から13のいずれかに記載のリトグラフ装置。
- 投影装置の光学素子と基板との間に液体を供給し、
前記投影装置を用いて、パターン化された放射線ビームを前記液体を通じて前記基板に投影し、
前記光学素子の温度プロファイル、前記基板の温度プロファイル、または前記光学素子及び前記基板の両方の温度プロファイルを測定し、
測定された温度プロファイルに基づいて前記光学素子、前記基板、及び前記液体の温度を実質的に共通の目標温度に調整することを含むことを特徴とするデバイス製造方法。 - 温度の調整は、前記光学素子、前記基板、及び前記液体の温度と、前記共通の目標温度との差を小さくするように前記液体の流量を調整することを含むことを特徴とする請求項15に記載の方法。
- 温度の調整は、前記光学素子、前記基板、及び前記液体の温度と、前記共通の目標温度との差を小さくするように前記液体の温度を調整することを含むことを特徴とする請求項15または16に記載の方法。
- 温度の調整は、前記共通の目標温度に向けて収束させるPID制御器を使用して実行されることを特徴とする請求項15から17のいずれかに記載の方法。
- 前記受け取った温度プロファイルは、前記基板及び前記光学素子のうち一方または両方における複数位置での温度測定結果を反映していることを特徴とする請求項11から14のいずれかに記載のリトグラフ装置。
- 前記光学素子の温度プロファイル、前記基板の温度プロファイル、または前記光学素子及び前記基板の両方の温度プロファイルの測定は、前記光学素子、前記基板、または前記光学素子及び前記基板の両方の温度を、前記基板及び前記光学素子のうち一方または両方における複数位置で測定することを含むことを特徴とする請求項15から18のいずれかに記載の方法。
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EP03254466.0 | 2003-07-16 |
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Publications (3)
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JP2009224806A JP2009224806A (ja) | 2009-10-01 |
JP2009224806A5 true JP2009224806A5 (ja) | 2010-05-13 |
JP4892588B2 JP4892588B2 (ja) | 2012-03-07 |
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JP2004207959A Expired - Lifetime JP4468095B2 (ja) | 2003-07-16 | 2004-07-15 | リトグラフ装置およびデバイス製造方法 |
JP2009159623A Expired - Fee Related JP4892588B2 (ja) | 2003-07-16 | 2009-07-06 | リトグラフ装置およびデバイス製造方法 |
JP2010070092A Expired - Fee Related JP5290226B2 (ja) | 2003-07-16 | 2010-03-25 | リトグラフ装置およびデバイス製造方法 |
JP2012061787A Expired - Fee Related JP5536126B2 (ja) | 2003-07-16 | 2012-03-19 | リトグラフ装置およびデバイス製造方法 |
JP2012061788A Expired - Fee Related JP5670370B2 (ja) | 2003-07-16 | 2012-03-19 | リトグラフ装置およびデバイス製造方法 |
JP2014110008A Expired - Fee Related JP6027051B2 (ja) | 2003-07-16 | 2014-05-28 | リトグラフ装置 |
JP2014152937A Expired - Fee Related JP6196945B2 (ja) | 2003-07-16 | 2014-07-28 | リトグラフ装置 |
JP2015120806A Expired - Fee Related JP6110894B2 (ja) | 2003-07-16 | 2015-06-16 | リトグラフ装置 |
JP2015142942A Expired - Fee Related JP6110902B2 (ja) | 2003-07-16 | 2015-07-17 | リトグラフ装置 |
JP2016209558A Expired - Fee Related JP6444353B2 (ja) | 2003-07-16 | 2016-10-26 | リトグラフ装置 |
JP2018071664A Pending JP2018132771A (ja) | 2003-07-16 | 2018-04-03 | リトグラフ装置 |
JP2018209450A Pending JP2019045868A (ja) | 2003-07-16 | 2018-11-07 | リトグラフ装置 |
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JP2010070092A Expired - Fee Related JP5290226B2 (ja) | 2003-07-16 | 2010-03-25 | リトグラフ装置およびデバイス製造方法 |
JP2012061787A Expired - Fee Related JP5536126B2 (ja) | 2003-07-16 | 2012-03-19 | リトグラフ装置およびデバイス製造方法 |
JP2012061788A Expired - Fee Related JP5670370B2 (ja) | 2003-07-16 | 2012-03-19 | リトグラフ装置およびデバイス製造方法 |
JP2014110008A Expired - Fee Related JP6027051B2 (ja) | 2003-07-16 | 2014-05-28 | リトグラフ装置 |
JP2014152937A Expired - Fee Related JP6196945B2 (ja) | 2003-07-16 | 2014-07-28 | リトグラフ装置 |
JP2015120806A Expired - Fee Related JP6110894B2 (ja) | 2003-07-16 | 2015-06-16 | リトグラフ装置 |
JP2015142942A Expired - Fee Related JP6110902B2 (ja) | 2003-07-16 | 2015-07-17 | リトグラフ装置 |
JP2016209558A Expired - Fee Related JP6444353B2 (ja) | 2003-07-16 | 2016-10-26 | リトグラフ装置 |
JP2018071664A Pending JP2018132771A (ja) | 2003-07-16 | 2018-04-03 | リトグラフ装置 |
JP2018209450A Pending JP2019045868A (ja) | 2003-07-16 | 2018-11-07 | リトグラフ装置 |
Country Status (6)
Country | Link |
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US (8) | US7738074B2 (ja) |
JP (12) | JP4468095B2 (ja) |
KR (1) | KR100835324B1 (ja) |
CN (2) | CN101950131B (ja) |
SG (1) | SG109000A1 (ja) |
TW (1) | TWI242697B (ja) |
Families Citing this family (180)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7372541B2 (en) * | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG121818A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN100568101C (zh) | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE10257766A1 (de) * | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
DE10261775A1 (de) * | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
JP4315198B2 (ja) | 2003-04-11 | 2009-08-19 | 株式会社ニコン | 液浸液体を光学アセンブリ下に維持するリソグラフィ装置及び液浸液体維持方法並びにそれらを用いるデバイス製造方法 |
WO2004099877A1 (de) * | 2003-05-12 | 2004-11-18 | Carl Zeiss Smt Ag | Optische messvorrichtung und betriebsverfahren für ein optisches abbildungssystem |
CN100541717C (zh) * | 2003-05-28 | 2009-09-16 | 株式会社尼康 | 曝光方法、曝光装置以及器件制造方法 |
US7213963B2 (en) * | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7684008B2 (en) | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP3401946A1 (en) * | 2003-06-13 | 2018-11-14 | Nikon Corporation | Exposure apparatus and device manufacturing method |
KR101146962B1 (ko) | 2003-06-19 | 2012-05-22 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조방법 |
US7738074B2 (en) * | 2003-07-16 | 2010-06-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1650787A4 (en) * | 2003-07-25 | 2007-09-19 | Nikon Corp | INVESTIGATION METHOD AND INVESTIGATION DEVICE FOR AN OPTICAL PROJECTION SYSTEM AND METHOD OF MANUFACTURING AN OPTICAL PROJECTION SYSTEM |
EP2264534B1 (en) | 2003-07-28 | 2013-07-17 | Nikon Corporation | Exposure apparatus, method for producing device, and method for controlling exposure apparatus |
US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US6844206B1 (en) * | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
SG145780A1 (en) * | 2003-08-29 | 2008-09-29 | Nikon Corp | Exposure apparatus and device fabricating method |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
KR101748923B1 (ko) | 2003-09-03 | 2017-06-19 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
WO2005029559A1 (ja) * | 2003-09-19 | 2005-03-31 | Nikon Corporation | 露光装置及びデバイス製造方法 |
KR101421398B1 (ko) | 2003-09-29 | 2014-07-18 | 가부시키가이샤 니콘 | 노광장치, 노광방법 및 디바이스 제조방법 |
KR20060126949A (ko) | 2003-10-08 | 2006-12-11 | 가부시키가이샤 니콘 | 기판 반송 장치와 기판 반송 방법, 노광 장치와 노광 방법,및 디바이스 제조 방법 |
JP2005136364A (ja) * | 2003-10-08 | 2005-05-26 | Zao Nikon Co Ltd | 基板搬送装置、露光装置、並びにデバイス製造方法 |
KR101111364B1 (ko) | 2003-10-08 | 2012-02-27 | 가부시키가이샤 자오 니콘 | 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광방법, 디바이스 제조 방법 |
TW201738932A (zh) | 2003-10-09 | 2017-11-01 | Nippon Kogaku Kk | 曝光裝置及曝光方法、元件製造方法 |
EP1524558A1 (en) | 2003-10-15 | 2005-04-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
JP4295712B2 (ja) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置製造方法 |
TWI470371B (zh) | 2003-12-03 | 2015-01-21 | 尼康股份有限公司 | An exposure apparatus, an exposure method, an element manufacturing method, and an optical component |
KR101499405B1 (ko) | 2003-12-15 | 2015-03-05 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
US20070081133A1 (en) * | 2004-12-14 | 2007-04-12 | Niikon Corporation | Projection exposure apparatus and stage unit, and exposure method |
JPWO2005057635A1 (ja) * | 2003-12-15 | 2007-07-05 | 株式会社ニコン | 投影露光装置及びステージ装置、並びに露光方法 |
JP4429023B2 (ja) * | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
EP1706793B1 (en) * | 2004-01-20 | 2010-03-03 | Carl Zeiss SMT AG | Exposure apparatus and measuring device for a projection lens |
US7589822B2 (en) * | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
WO2005076321A1 (ja) | 2004-02-03 | 2005-08-18 | Nikon Corporation | 露光装置及びデバイス製造方法 |
JP5167572B2 (ja) * | 2004-02-04 | 2013-03-21 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
EP3093873B1 (en) * | 2004-02-04 | 2017-10-11 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing a device |
US7034917B2 (en) * | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
EP1747499A2 (en) | 2004-05-04 | 2007-01-31 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7616383B2 (en) * | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005119368A2 (en) | 2004-06-04 | 2005-12-15 | Carl Zeiss Smt Ag | System for measuring the image quality of an optical imaging system |
JP2005353762A (ja) * | 2004-06-09 | 2005-12-22 | Matsushita Electric Ind Co Ltd | 半導体製造装置及びパターン形成方法 |
US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2006006562A1 (ja) * | 2004-07-12 | 2006-01-19 | Nikon Corporation | 露光条件の決定方法、露光方法、露光装置、及びデバイス製造方法 |
JP4655792B2 (ja) * | 2004-07-12 | 2011-03-23 | 株式会社ニコン | 露光条件の決定方法、及び露光方法、露光装置、並びにデバイス製造方法 |
ATE441937T1 (de) * | 2004-07-12 | 2009-09-15 | Nikon Corp | Belichtungsgerät und bauelemente- herstellungsverfahren |
JP3870207B2 (ja) * | 2004-08-05 | 2007-01-17 | キヤノン株式会社 | 液浸露光装置及びデバイス製造方法 |
US7304715B2 (en) | 2004-08-13 | 2007-12-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7701550B2 (en) * | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006190971A (ja) * | 2004-10-13 | 2006-07-20 | Nikon Corp | 露光装置、露光方法及びデバイス製造方法 |
US7158896B1 (en) * | 2004-11-01 | 2007-01-02 | Advanced Micro Devices, Inc. | Real time immersion medium control using scatterometry |
US7411657B2 (en) | 2004-11-17 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7623218B2 (en) * | 2004-11-24 | 2009-11-24 | Carl Zeiss Smt Ag | Method of manufacturing a miniaturized device |
US7256121B2 (en) * | 2004-12-02 | 2007-08-14 | Texas Instruments Incorporated | Contact resistance reduction by new barrier stack process |
US7446850B2 (en) * | 2004-12-03 | 2008-11-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7397533B2 (en) * | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7196770B2 (en) * | 2004-12-07 | 2007-03-27 | Asml Netherlands B.V. | Prewetting of substrate before immersion exposure |
US7365827B2 (en) * | 2004-12-08 | 2008-04-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7352440B2 (en) | 2004-12-10 | 2008-04-01 | Asml Netherlands B.V. | Substrate placement in immersion lithography |
US7403261B2 (en) * | 2004-12-15 | 2008-07-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7528931B2 (en) * | 2004-12-20 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7880860B2 (en) * | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7405805B2 (en) | 2004-12-28 | 2008-07-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7491661B2 (en) * | 2004-12-28 | 2009-02-17 | Asml Netherlands B.V. | Device manufacturing method, top coat material and substrate |
US20060147821A1 (en) | 2004-12-30 | 2006-07-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG124351A1 (en) * | 2005-01-14 | 2006-08-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1681597B1 (en) * | 2005-01-14 | 2010-03-10 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8692973B2 (en) * | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
EP2506289A3 (en) * | 2005-01-31 | 2013-05-22 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
JP2006222165A (ja) * | 2005-02-08 | 2006-08-24 | Canon Inc | 露光装置 |
US8859188B2 (en) | 2005-02-10 | 2014-10-14 | Asml Netherlands B.V. | Immersion liquid, exposure apparatus, and exposure process |
US7224431B2 (en) * | 2005-02-22 | 2007-05-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7378025B2 (en) * | 2005-02-22 | 2008-05-27 | Asml Netherlands B.V. | Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method |
US8018573B2 (en) * | 2005-02-22 | 2011-09-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7428038B2 (en) | 2005-02-28 | 2008-09-23 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid |
US7282701B2 (en) * | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
US7324185B2 (en) * | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7684010B2 (en) * | 2005-03-09 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing |
JP4072543B2 (ja) * | 2005-03-18 | 2008-04-09 | キヤノン株式会社 | 液浸露光装置及びデバイス製造方法 |
EP1879217A4 (en) * | 2005-03-18 | 2010-06-09 | Nikon Corp | EXPOSURE METHOD, EXPOSURE APPARATUS, DEVICE MANUFACTURING METHOD, AND EXPOSURE APPARATUS EVALUATION METHOD |
JP5040646B2 (ja) * | 2005-03-23 | 2012-10-03 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
JP4858744B2 (ja) * | 2005-03-24 | 2012-01-18 | 株式会社ニコン | 露光装置 |
US7330238B2 (en) * | 2005-03-28 | 2008-02-12 | Asml Netherlands, B.V. | Lithographic apparatus, immersion projection apparatus and device manufacturing method |
US7411654B2 (en) * | 2005-04-05 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7291850B2 (en) * | 2005-04-08 | 2007-11-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
JP4872916B2 (ja) | 2005-04-18 | 2012-02-08 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
US7286205B2 (en) * | 2005-04-25 | 2007-10-23 | Infineon Technologies Ag | Closing disk for immersion head |
US20060250588A1 (en) * | 2005-05-03 | 2006-11-09 | Stefan Brandl | Immersion exposure tool cleaning system and method |
US7317507B2 (en) * | 2005-05-03 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7433016B2 (en) | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006319064A (ja) * | 2005-05-11 | 2006-11-24 | Canon Inc | 測定装置、露光方法及び装置 |
WO2006133800A1 (en) | 2005-06-14 | 2006-12-21 | Carl Zeiss Smt Ag | Lithography projection objective, and a method for correcting image defects of the same |
US7652746B2 (en) * | 2005-06-21 | 2010-01-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7751027B2 (en) | 2005-06-21 | 2010-07-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2007036193A (ja) * | 2005-06-23 | 2007-02-08 | Canon Inc | 露光装置 |
US7834974B2 (en) | 2005-06-28 | 2010-11-16 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7474379B2 (en) | 2005-06-28 | 2009-01-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7468779B2 (en) * | 2005-06-28 | 2008-12-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7291569B2 (en) * | 2005-06-29 | 2007-11-06 | Infineon Technologies Ag | Fluids for immersion lithography systems |
US8054445B2 (en) * | 2005-08-16 | 2011-11-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2009508327A (ja) * | 2005-09-13 | 2009-02-26 | カール・ツァイス・エスエムティー・アーゲー | 光学撮像特性設定方法および投影露光装置 |
US7411658B2 (en) * | 2005-10-06 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2007103841A (ja) * | 2005-10-07 | 2007-04-19 | Toshiba Corp | 半導体装置の製造方法 |
US7804577B2 (en) | 2005-11-16 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus |
US7656501B2 (en) * | 2005-11-16 | 2010-02-02 | Asml Netherlands B.V. | Lithographic apparatus |
US7864292B2 (en) * | 2005-11-16 | 2011-01-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7633073B2 (en) * | 2005-11-23 | 2009-12-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4765580B2 (ja) * | 2005-11-28 | 2011-09-07 | 株式会社ニコン | 液浸観察方法、液浸顕微鏡装置、及び検査装置 |
US20070124987A1 (en) * | 2005-12-05 | 2007-06-07 | Brown Jeffrey K | Electronic pest control apparatus |
KR20080071552A (ko) | 2005-12-06 | 2008-08-04 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치 및 디바이스 제조 방법 |
US7420194B2 (en) * | 2005-12-27 | 2008-09-02 | Asml Netherlands B.V. | Lithographic apparatus and substrate edge seal |
US7839483B2 (en) | 2005-12-28 | 2010-11-23 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a control system |
US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN1996145B (zh) * | 2005-12-31 | 2010-08-25 | 上海集成电路研发中心有限公司 | 一种降低浸没式光刻技术中光学部件被水溶液沾污的方法 |
US8045134B2 (en) * | 2006-03-13 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus, control system and device manufacturing method |
US7760324B2 (en) * | 2006-03-20 | 2010-07-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100590173C (zh) * | 2006-03-24 | 2010-02-17 | 北京有色金属研究总院 | 一种荧光粉及其制造方法和所制成的电光源 |
US9477158B2 (en) | 2006-04-14 | 2016-10-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE102006021797A1 (de) * | 2006-05-09 | 2007-11-15 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung mit thermischer Dämpfung |
US7969548B2 (en) * | 2006-05-22 | 2011-06-28 | Asml Netherlands B.V. | Lithographic apparatus and lithographic apparatus cleaning method |
US20070296937A1 (en) * | 2006-06-26 | 2007-12-27 | International Business Machines Corporation | Illumination light in immersion lithography stepper for particle or bubble detection |
US7613538B2 (en) * | 2006-07-24 | 2009-11-03 | Hewlett-Packard Development Company, L.P. | Compensation for distortion in contact lithography |
US8045135B2 (en) * | 2006-11-22 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus with a fluid combining unit and related device manufacturing method |
US9632425B2 (en) | 2006-12-07 | 2017-04-25 | Asml Holding N.V. | Lithographic apparatus, a dryer and a method of removing liquid from a surface |
US8634053B2 (en) | 2006-12-07 | 2014-01-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7791709B2 (en) * | 2006-12-08 | 2010-09-07 | Asml Netherlands B.V. | Substrate support and lithographic process |
US8817226B2 (en) | 2007-02-15 | 2014-08-26 | Asml Holding N.V. | Systems and methods for insitu lens cleaning using ozone in immersion lithography |
US8654305B2 (en) * | 2007-02-15 | 2014-02-18 | Asml Holding N.V. | Systems and methods for insitu lens cleaning in immersion lithography |
US7866330B2 (en) * | 2007-05-04 | 2011-01-11 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US7900641B2 (en) * | 2007-05-04 | 2011-03-08 | Asml Netherlands B.V. | Cleaning device and a lithographic apparatus cleaning method |
US8011377B2 (en) | 2007-05-04 | 2011-09-06 | Asml Netherlands B.V. | Cleaning device and a lithographic apparatus cleaning method |
US8947629B2 (en) * | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
TWI450047B (zh) | 2007-07-13 | 2014-08-21 | Mapper Lithography Ip Bv | 微影系統、夾緊方法及晶圓台 |
US8705010B2 (en) | 2007-07-13 | 2014-04-22 | Mapper Lithography Ip B.V. | Lithography system, method of clamping and wafer table |
US9025126B2 (en) | 2007-07-31 | 2015-05-05 | Nikon Corporation | Exposure apparatus adjusting method, exposure apparatus, and device fabricating method |
JP5097166B2 (ja) | 2008-05-28 | 2012-12-12 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置の動作方法 |
JP5277731B2 (ja) * | 2008-06-02 | 2013-08-28 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
NL2002964A1 (nl) * | 2008-06-16 | 2009-12-17 | Asml Netherlands Bv | Lithographic Apparatus, a Metrology Apparatus and a Method of Using the Apparatus. |
EP2136250A1 (en) * | 2008-06-18 | 2009-12-23 | ASML Netherlands B.V. | Lithographic apparatus and method |
NL2003341A (en) * | 2008-08-22 | 2010-03-10 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
US8477284B2 (en) * | 2008-10-22 | 2013-07-02 | Nikon Corporation | Apparatus and method to control vacuum at porous material using multiple porous materials |
NL2004808A (en) | 2009-06-30 | 2011-01-12 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
NL2005207A (en) * | 2009-09-28 | 2011-03-29 | Asml Netherlands Bv | Heat pipe, lithographic apparatus and device manufacturing method. |
US8946514B2 (en) * | 2009-12-28 | 2015-02-03 | E.I. Du Pont De Nemours And Company | Sorghum fertility restorer genotypes and methods of marker-assisted selection |
BR112012022900A2 (pt) * | 2010-03-11 | 2018-06-05 | Pixtronix Inc | modos de operação transflexivos e refletivos para um dispositivo de exibição |
EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
NL2007498A (en) * | 2010-12-23 | 2012-06-27 | Asml Netherlands Bv | Lithographic apparatus and method of modifying a beam of radiation within a lithographic apparatus. |
SG188036A1 (en) * | 2011-08-18 | 2013-03-28 | Asml Netherlands Bv | Lithographic apparatus, support table for a lithographic apparatus and device manufacturing method |
JP6122252B2 (ja) * | 2012-05-01 | 2017-04-26 | キヤノン株式会社 | 露光装置及びデバイスの製造方法 |
US9017934B2 (en) | 2013-03-08 | 2015-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist defect reduction system and method |
US9175173B2 (en) | 2013-03-12 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Unlocking layer and method |
US9245751B2 (en) | 2013-03-12 | 2016-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-reflective layer and method |
US9110376B2 (en) | 2013-03-12 | 2015-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
US9256128B2 (en) | 2013-03-12 | 2016-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for manufacturing semiconductor device |
US9502231B2 (en) | 2013-03-12 | 2016-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist layer and method |
US9354521B2 (en) | 2013-03-12 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
US8932799B2 (en) | 2013-03-12 | 2015-01-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
US9543147B2 (en) | 2013-03-12 | 2017-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method of manufacture |
US9117881B2 (en) | 2013-03-15 | 2015-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conductive line system and process |
JP6362399B2 (ja) * | 2013-05-30 | 2018-07-25 | キヤノン株式会社 | インプリント装置、インプリント方法および物品の製造方法 |
US9341945B2 (en) | 2013-08-22 | 2016-05-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method of formation and use |
US10036953B2 (en) | 2013-11-08 | 2018-07-31 | Taiwan Semiconductor Manufacturing Company | Photoresist system and method |
US10095113B2 (en) | 2013-12-06 | 2018-10-09 | Taiwan Semiconductor Manufacturing Company | Photoresist and method |
US9761449B2 (en) | 2013-12-30 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gap filling materials and methods |
US9599896B2 (en) | 2014-03-14 | 2017-03-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
US9581908B2 (en) | 2014-05-16 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method |
CN107003619B (zh) | 2014-12-01 | 2019-08-09 | Asml荷兰有限公司 | 投影系统、光刻设备及其控制方法 |
CN105183037B (zh) * | 2015-09-09 | 2017-11-14 | 合肥芯碁微电子装备有限公司 | 一种激光直写式光刻机精确温度控制方法 |
CN108121077A (zh) * | 2016-11-30 | 2018-06-05 | 北京航天计量测试技术研究所 | 一种高功率激光光斑均匀化装置 |
JP7390777B2 (ja) | 2017-12-27 | 2023-12-04 | いすゞ自動車株式会社 | 補強構造 |
CN109213231B (zh) * | 2018-08-17 | 2022-01-14 | 奥比中光科技集团股份有限公司 | 温度控制系统 |
CN112445084B (zh) * | 2020-12-20 | 2021-11-30 | 华中科技大学 | 一种浸没式光刻机的温度控制方法及装置 |
DE102022213681A1 (de) * | 2022-12-15 | 2024-06-20 | Carl Zeiss Smt Gmbh | Kühlvorrichtung für eine lithographieanlage |
Family Cites Families (147)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE206607C (ja) | ||||
DE242880C (ja) | ||||
DE221563C (ja) | ||||
DE221533C (ja) | ||||
DE224448C (ja) | ||||
GB1242527A (en) * | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
US3573975A (en) * | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
EP0023231B1 (de) | 1979-07-27 | 1982-08-11 | Tabarelli, Werner, Dr. | Optisches Lithographieverfahren und Einrichtung zum Kopieren eines Musters auf eine Halbleiterscheibe |
FR2474708B1 (fr) | 1980-01-24 | 1987-02-20 | Dme | Procede de microphotolithographie a haute resolution de traits |
JPS5754317A (en) * | 1980-09-19 | 1982-03-31 | Hitachi Ltd | Method and device for forming pattern |
US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4390273A (en) * | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS57169244A (en) * | 1981-04-13 | 1982-10-18 | Canon Inc | Temperature controller for mask and wafer |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
DD206607A1 (de) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | Verfahren und vorrichtung zur beseitigung von interferenzeffekten |
DD242880A1 (de) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | Einrichtung zur fotolithografischen strukturuebertragung |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
JPS60158626A (ja) * | 1984-01-30 | 1985-08-20 | Canon Inc | 半導体露光装置 |
JPS60163046A (ja) * | 1984-02-03 | 1985-08-24 | Nippon Kogaku Kk <Nikon> | 投影露光光学装置及び投影露光方法 |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS61100929A (ja) | 1984-10-23 | 1986-05-19 | Canon Inc | 投影型半導体露光装置 |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS62121417A (ja) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
JPS6370522A (ja) * | 1986-09-12 | 1988-03-30 | Nippon Telegr & Teleph Corp <Ntt> | 紫外線露光方法 |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
US4825247A (en) * | 1987-02-16 | 1989-04-25 | Canon Kabushiki Kaisha | Projection exposure apparatus |
JPH01152639A (ja) * | 1987-12-10 | 1989-06-15 | Canon Inc | 吸着保持装置 |
US5040020A (en) * | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
EP0363098B1 (en) * | 1988-10-03 | 1995-04-05 | Canon Kabushiki Kaisha | Temperature controlling device |
FI95708C (fi) | 1988-10-31 | 1996-03-11 | Eisai Co Ltd | Analogiamenetelmä 1,4-diatsepiinijohdannaisen ja sen farmaseuttisesti sopivan suolan valmistamiseksi |
JPH02185016A (ja) * | 1989-01-12 | 1990-07-19 | Nikon Corp | 投影光学装置 |
US5231291A (en) * | 1989-08-01 | 1993-07-27 | Canon Kabushiki Kaisha | Wafer table and exposure apparatus with the same |
JPH03209479A (ja) | 1989-09-06 | 1991-09-12 | Sanee Giken Kk | 露光方法 |
JPH03198320A (ja) * | 1989-12-27 | 1991-08-29 | Nikon Corp | 投影光学装置 |
US5142132A (en) * | 1990-11-05 | 1992-08-25 | Litel Instruments | Adaptive optic wafer stepper illumination system |
US5121256A (en) * | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JP3218478B2 (ja) | 1992-09-04 | 2001-10-15 | 株式会社ニコン | 投影露光装置及び方法 |
US5294778A (en) * | 1991-09-11 | 1994-03-15 | Lam Research Corporation | CVD platen heater system utilizing concentric electric heating elements |
US5402224A (en) * | 1992-09-25 | 1995-03-28 | Nikon Corporation | Distortion inspecting method for projection optical system |
JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JP2520833B2 (ja) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | 浸漬式の液処理装置 |
US6753948B2 (en) * | 1993-04-27 | 2004-06-22 | Nikon Corporation | Scanning exposure method and apparatus |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
US5638687A (en) * | 1994-11-21 | 1997-06-17 | Dainippon Screen Mfg. Co., Ltd. | Substrate cooling method and apparatus |
US5716763A (en) | 1994-12-06 | 1998-02-10 | International Business Machines Corporation | Liquid immersion heating process for substrate temperature uniformity |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US5883704A (en) | 1995-08-07 | 1999-03-16 | Nikon Corporation | Projection exposure apparatus wherein focusing of the apparatus is changed by controlling the temperature of a lens element of the projection optical system |
US6645701B1 (en) * | 1995-11-22 | 2003-11-11 | Nikon Corporation | Exposure method and exposure apparatus |
JPH09270384A (ja) * | 1996-03-29 | 1997-10-14 | Nikon Corp | 温度制御装置及び露光装置 |
US6104687A (en) | 1996-08-26 | 2000-08-15 | Digital Papyrus Corporation | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JP3612920B2 (ja) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | 光学記録媒体の原盤作製用露光装置 |
JPH10255319A (ja) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
JP3352354B2 (ja) * | 1997-04-28 | 2002-12-03 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
KR19990034784A (ko) | 1997-10-30 | 1999-05-15 | 윤종용 | 노광장비의 척부 |
JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
EP1039511A4 (en) | 1997-12-12 | 2005-03-02 | Nikon Corp | PROJECTION EXPOSURE PROCESSING METHOD AND PROJECTION APPARATUS |
AU2747999A (en) | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
KR200224439Y1 (ko) | 1999-04-16 | 2001-05-15 | 나재흠 | 파일직기에 있어서 침포롤러 |
TWI242111B (en) | 1999-04-19 | 2005-10-21 | Asml Netherlands Bv | Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus |
US6225224B1 (en) * | 1999-05-19 | 2001-05-01 | Infineon Technologies Norht America Corp. | System for dispensing polishing liquid during chemical mechanical polishing of a semiconductor wafer |
JP4504479B2 (ja) | 1999-09-21 | 2010-07-14 | オリンパス株式会社 | 顕微鏡用液浸対物レンズ |
JP2001118783A (ja) * | 1999-10-21 | 2001-04-27 | Nikon Corp | 露光方法及び装置、並びにデバイス製造方法 |
JP2001143992A (ja) * | 1999-11-12 | 2001-05-25 | Nikon Corp | 露光量制御装置、露光量制御方法、露光装置及び露光方法 |
JP2001244178A (ja) * | 2000-02-29 | 2001-09-07 | Canon Inc | 露光装置および露光方法ならびにデバイス製造方法 |
JP2001332490A (ja) * | 2000-03-14 | 2001-11-30 | Nikon Corp | 位置合わせ方法、露光方法、露光装置、及びデバイス製造方法 |
JP2001272604A (ja) * | 2000-03-27 | 2001-10-05 | Olympus Optical Co Ltd | 液浸対物レンズおよびそれを用いた光学装置 |
JP3531914B2 (ja) * | 2000-04-14 | 2004-05-31 | キヤノン株式会社 | 光学装置、露光装置及びデバイス製造方法 |
US6699630B2 (en) * | 2000-07-07 | 2004-03-02 | Nikon Corporation | Method and apparatus for exposure, and device manufacturing method |
TW591653B (en) | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
JP2002118050A (ja) * | 2000-10-10 | 2002-04-19 | Canon Inc | ステージ装置、露光装置、半導体デバイス製造方法、半導体製造工場、および露光装置の保守方法 |
KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
US20020163629A1 (en) * | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
JP2002341249A (ja) | 2001-05-11 | 2002-11-27 | Nikon Corp | 液浸系顕微鏡対物レンズ |
US6954255B2 (en) * | 2001-06-15 | 2005-10-11 | Canon Kabushiki Kaisha | Exposure apparatus |
JP2003059807A (ja) | 2001-08-20 | 2003-02-28 | Nikon Corp | 露光方法及び露光装置、並びにデバイス製造方法 |
JP4302376B2 (ja) | 2001-09-03 | 2009-07-22 | 東京エレクトロン株式会社 | 液処理方法及び液処理装置 |
US6600547B2 (en) * | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
KR20050044371A (ko) * | 2001-11-07 | 2005-05-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 광학 스폿 그리드 어레이 프린터 |
JP2003195476A (ja) * | 2001-12-27 | 2003-07-09 | Toshiba Corp | パターン形成装置およびパターン形成方法 |
JP3799275B2 (ja) * | 2002-01-08 | 2006-07-19 | キヤノン株式会社 | 走査露光装置及びその製造方法並びにデバイス製造方法 |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
DE10229818A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
US7362508B2 (en) | 2002-08-23 | 2008-04-22 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
EP2495613B1 (en) * | 2002-11-12 | 2013-07-31 | ASML Netherlands B.V. | Lithographic apparatus |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN101424881B (zh) * | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | 光刻投射装置 |
SG121818A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN100568101C (zh) * | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG121829A1 (en) * | 2002-11-29 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10258718A1 (de) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
JP4595320B2 (ja) * | 2002-12-10 | 2010-12-08 | 株式会社ニコン | 露光装置、及びデバイス製造方法 |
JP4362867B2 (ja) | 2002-12-10 | 2009-11-11 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
KR101036114B1 (ko) * | 2002-12-10 | 2011-05-23 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
KR20050085236A (ko) | 2002-12-10 | 2005-08-29 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
JP4232449B2 (ja) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
SG171468A1 (en) | 2002-12-10 | 2011-06-29 | Nikon Corp | Exposure apparatus and method for producing device |
KR20050062665A (ko) | 2002-12-10 | 2005-06-23 | 가부시키가이샤 니콘 | 노광장치 및 디바이스 제조방법 |
WO2004053957A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 面位置検出装置、露光方法、及びデバイス製造方法 |
CN100429748C (zh) | 2002-12-10 | 2008-10-29 | 株式会社尼康 | 曝光装置和器件制造方法 |
JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
TW200421444A (en) | 2002-12-10 | 2004-10-16 | Nippon Kogaku Kk | Optical device and projecting exposure apparatus using such optical device |
WO2004053951A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光方法及び露光装置並びにデバイス製造方法 |
DE10257766A1 (de) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
EP1429190B1 (en) * | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
JP4184346B2 (ja) * | 2002-12-13 | 2008-11-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 層上のスポットを照射するための方法及び装置における液体除去 |
KR100971440B1 (ko) | 2002-12-19 | 2010-07-21 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 레이어 상의 스폿을 조사하기 위한 방법 및 장치 |
DE60307322T2 (de) | 2002-12-19 | 2007-10-18 | Koninklijke Philips Electronics N.V. | Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
JP4358530B2 (ja) * | 2003-02-17 | 2009-11-04 | 財団法人国際科学振興財団 | 半導体デバイス製造用マスク作成装置 |
JP3939670B2 (ja) | 2003-03-26 | 2007-07-04 | シャープ株式会社 | フレア測定用フォトマスク対、フレア測定機構、及び、フレア測定方法 |
SG141425A1 (en) * | 2003-04-10 | 2008-04-28 | Nikon Corp | Environmental system including vacuum scavange for an immersion lithography apparatus |
TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
JP5143331B2 (ja) | 2003-05-28 | 2013-02-13 | 株式会社ニコン | 露光方法及び露光装置、並びにデバイス製造方法 |
CN100541717C (zh) * | 2003-05-28 | 2009-09-16 | 株式会社尼康 | 曝光方法、曝光装置以及器件制造方法 |
US7213963B2 (en) * | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7684008B2 (en) * | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7317504B2 (en) * | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US6867844B2 (en) * | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
US7738074B2 (en) * | 2003-07-16 | 2010-06-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7326522B2 (en) * | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
US7545481B2 (en) * | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7125652B2 (en) * | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
US7394521B2 (en) * | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
JP4429023B2 (ja) * | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7463330B2 (en) * | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7304715B2 (en) * | 2004-08-13 | 2007-12-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1804278A4 (en) | 2004-09-14 | 2011-03-02 | Nikon Corp | CORRECTION METHOD AND EXPOSURE DEVICE |
US8045134B2 (en) | 2006-03-13 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus, control system and device manufacturing method |
DE102006032877A1 (de) | 2006-07-15 | 2008-01-17 | Carl Zeiss Smt Ag | Mikrolithographische Projektionsbelichtungsanlage |
JP2015072574A (ja) | 2013-10-02 | 2015-04-16 | ヤフー株式会社 | 配信装置、配信方法及び端末装置 |
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