EP0490608B1 - Capteur magnétorésistif - Google Patents
Capteur magnétorésistif Download PDFInfo
- Publication number
- EP0490608B1 EP0490608B1 EP91311417A EP91311417A EP0490608B1 EP 0490608 B1 EP0490608 B1 EP 0490608B1 EP 91311417 A EP91311417 A EP 91311417A EP 91311417 A EP91311417 A EP 91311417A EP 0490608 B1 EP0490608 B1 EP 0490608B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- ferromagnetic material
- magnetoresistive sensor
- ferromagnetic
- magnetization direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B2005/0002—Special dispositions or recording techniques
- G11B2005/0005—Arrangements, methods or circuits
- G11B2005/001—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure
- G11B2005/0013—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation
- G11B2005/0016—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation of magnetoresistive transducers
- G11B2005/0018—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation of magnetoresistive transducers by current biasing control or regulation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
Definitions
- This invention relates in general to magnetic transducers for reading information signals from a magnetic medium and, in particular, to an improved magnetoresistive read transducer.
- the prior art discloses a magnetic transducer referred to as a magnetoresistive (MR) sensor or head which has been shown to be capable of reading data from a magnetic surface at great linear densities.
- An MR sensor detects magnetic field signals through the resistance changes of a read element made from a magnetic material as a function of the amount and direction of magnetic flux being sensed by the element.
- These prior art MR sensors operate on the basis of the anisotropic magnetoresistive (AMR) effect in which a component of the resistance varies as cos 2 of the angle between the magnetization and the direction of current flow.
- AMR anisotropic magnetoresistive
- the prior art does not show an MR device which produces enhanced MR effects at sufficiently low fields and which has a sufficiently linear response so that it is useful as an MR sensor.
- the present invention seeks to produce an MR sensor having MR effects enhanced over AMR and having a substantially linear response at small applied fields.
- the invention provides a magnetoresistive sensor comprising: a first and a second thin film layer of ferromagnetic material separated by a thin film spacer layer, the magnetization direction of said first layer of ferromagnetic material being substantially perpendicular to the magnetization direction of said second layer of ferromagnetic material at zero applied magnetic field; conductor means for applying a current flow through said magnetoresistive sensor to permit the sensing of variations in the resistivity of said magnetoresistive sensor; the sensor being characterised in that: the spacer layer is comprised of a non-magnetic metallic material selected from the group consisting of Ag, Cu, Au, Pt and Pd; and in that the variations in resistivity of the magnetoresistive sensor are due to the difference in rotation of the magnetization directions in said layers of ferromagnetic materials as a function of the magnetic field being sensed.
- the magnetization direction of the second layer of ferromagnetic material is fixed and the changes in resistivity are produced as a result of the rotation of the magnetization in the first layer of ferromagnetic material.
- AMR anisotropic magnetoresistance
- Fig. 2 shows the BH loop and the MR response of a similar structure along the easy axis on a greatly expanded x-axis scale.
- This structure was built on a silicon substrate comprising the following structure: Si/6nm NiFe/2.5nm Cu/3nm NiFe/7nm FeMn/2nm Ag.
- the second NiFe layer is exchange biased to 13.53 kA.m -1 (170 Oe) and does not switch in the range of field shown in Fig 2.
- the spin valve response is considerably weaker, and thus less useful.
- the basic shape of the MR response suggests that it could be used as a magnetic field sensor.
- the structure of the sensor has been designed to linearize the response, decrease the coercivity, center the response, and have changes in response to an applied magnetic field made by domain rotation. This permits a magnetic field sensor, based on spin valve structure, to be produced that exhibits a much greater change in magnetoresistance than the prior art MR sensors in response to a magnetic field no greater than that required for the prior art MR sensors.
- the MR sensor comprises a suitable substrate 10 such as glass, ceramic or a semiconductor, for example, upon which is deposited a first thin film layer of soft ferromagnetic material 12, a thin film layer of a nonmagnetic metallic material 14, and a second thin film layer of ferromagnetic material 16.
- the two layers 12, 16 of ferromagnetic material are oriented with their magnetization at an angle of about 90 degrees in the absence of an applied magnetic field.
- the magnetization of the second layer of ferromagnetic material 16 is fixed in position as shown by the arrow 20.
- the magnetization in the first layer of ferromagnetic material 12, in the absence of an applied magnetic field, is shown by the arrow 22. Changes in magnetization in layer 12 are by rotation, in response to an applied magnetic field, (such as magnetic field h in Fig. 3) as shown dotted in Fig. 3.
- the second layer of ferromagnetic material 16 is of a higher coercivity than that of the first layer of ferromagnetic layer 12 so that the magnetization of the layer 16 can be fixed in position.
- the specific embodiment shown in Fig. 4 provides two alternate ways to fix the magnetization of the second layer of ferromagnetic material 16 in position.
- a thin film layer of an antiferromagnetic material 18 of high resistance is deposited in direct contact with the second thin film layer of ferromagnetic material 16 so that a biasing field can be produced by exchange coupling as is known in the art.
- layer 18 could be a ferromagnetic layer of sufficiently high squareness, high coercivity and high resistance.
- the structure of Fig. 4 may be inverted, so that layer 18 is deposited first, followed by layer 16, 14, and 12.
- the purpose of underlayer 24 is to optimize the texture, grain size and morphology of the subsequent layers. The morphology is crucial in obtaining the large MR effects since it permits the use of a very thin spacer layer of a nonmagnetic metallic material 14.
- the underlayer must have a high resistivity to minimize shunting effects.
- the underlayer may also be used with the inverted structure described above. Should the substrate 10 have a sufficiently high resistivity, have a sufficiently planar surface, and have a suitable crystallographic structure, then underlayer 24 can be omitted.
- Means for producing a longitudinal bias is provided to maintain layer 12 in a single domain state as indicated by the arrows in Fig. 5.
- the means for producing a longitudinal bias comprises layers 26 of ferromagnetic material having high coercivity, high squareness, and high resistivity. Hard magnetic layers 26 are in contact with the end legions of ferromagnetic layer 12, and layers 26 are oriented with their magnetization in the direction shown by the arrows in Fig. 5.
- antiferromagnetic layers can be deposited in contact with the end regions of layer 12 and oriented as shown by the arrows in Fig 5 to produce the required longitudinal bias. These antiferromagnetic layers must have a sufficiently different blocking temperature than that of antiferromagnetic layer 18 which is used to fix the magnetization of the second ferromagnetic layer 16.
- a capping layer 28 of a high resistivity material such as Ta, for example is then deposited over the MR sensor. Electrical leads 30 and 32 are provided to form a circuit path between the MR sensor structure, current source 34 and sensing means 36.
- Fig 6 shows the magnetoresistive response of a specific embodiment of a magnetoresistive sensor according to the present invention.
- This structure comprises Si/Ta 5nm/3x(NiFe 7nm/Cu 2nm/NiFe 5nm/FeMn 7nm/)Ta 5nm.
- the magnetoresistive response is very linear over the range of about 0 to 1.19 kA.m -1 (0 to 15 Oe), has negligible coercivity, and the changes are by domain rotation.
- this response is not centered at zero field due to a slight ferromagnetic coupling of the two ferromagnetic layers 12, 16 through the layer 14 of nonmagnetic metallic material.
- Centering the response to zero field can be accomplished by several means. In an actual patterned structure, the magnetostatic interaction between the two ferromagnetic layers would tend to cancel the effect of coupling through the nonmagnetic metallic layer thereby centering the response. Another way of centering the response is by the appropriate choice of the magnitude and direction of the sense current. Another way of centering the response is by setting the easy axis of layer 12 at slightly more than 90 degrees with respect to the magnetization of layer 16. A further way of centering the response is by a small change in the angle between the magnetization in layers 12 and 16. Note that this response is very linear, is centered at zero field, and is sensitive to signals within the range encountered in magnetic recording applications. It can be seen that these characteristics make this an excellent magnetic field sensor for magnetic recording application.
- the layered magnetic structure can be made by any suitable technique such as by sputtering, for example.
- the structure of Fig. 3 can be made by depositing the first thin film ferromagnetic layer 12 with a magnetic field oriented in the chosen direction to orient the easy axis of the film across the page as shown in Fig. 3.
- the ferromagnetic layers 12, 16 can be made of any suitable magnetic materials such as Co, Fe, Ni and their alloys such as NiFe, NiCo, and FeCo, for example.
- the amplitude of the magnetoresistance varies with the thickness of the first thin film ferromagnetic layer 12 as shown in Fig. 7 for three selected magnetic materials Co, NiFe, and Ni. These three curves have very similar shapes characterized by a broad maximum between about 5nm and 15nm, so this is the preferred range for the thickness of the first ferromagnetic layer 12.
- the nonmagnetic spacer layer 14 is metallic with high conductivity.
- Noble materials such as Au, Ag and Cu give large MR response, Pt and Pd give small MR response, while Cr and Ta exhibit very small MR response.
- the amplitude of the magnetoresistance also varies with the thickness of the nonmagnetic spacer layer 14 as shown in Fig. 8 for three selected materials Ag, Au and Cu. It can be seen that thinner layers produce a higher magnetoresistance; however, the operation of the sensor is based on having two essentially uncoupled ferromagnetic layers. Therefore, if the thickness of the spacer layer 14 is too small, it is not possible to switch one of the ferromagnetic layers 12, 16 without also switching the other layer.
- the minimum spacing for this purpose is about 1.6nm for films sputtered at or near room temperature.
- the thickness of the spacer layer is within the range of about 8 to 10 nanometres, the resulting magnetoresistance is substantially the same as that produced by AMR.
- the thickness of the spacer layer 14 is preferably within the range of about 1.6nm to about 4nm.
- the layers are deposited as described above, and the antiferromagnetic layer 18 is then deposited.
- the thickness of the antiferromagnetic layer 18 must be chosen so that the blocking temperture is high enough with respect to the device working temperature ( ⁇ 50°C typically).
- the device working temperature ⁇ 50°C typically.
- thicknesses above 9nm are suitable.
- too great a thickness (above 15nm) would lead to a decrease of the MR response by a shunting of the current through this part of the structure.
- the proper direction of the exchange field created by this layer can be obtained by applying a magnetic field in the desired direction during deposition (a direction perpendicular to the easy axis of the first ferromagnetic layer 12) or after deposition by rapidly heating the structure above the blocking temperature and rapidly cooling to room temperature in a magnetic field applied perpendicular to the easy axis of the first ferromagnetic layer 12.
- the field to be detected by the sensor is along the hard axis of the first ferromagnetic layer 12.
- An inverted structure, where layer 18 is deposited first, followed by layers 16, 14 and 12 can be produced in a similar manner.
- a sensor has been described which is linear, centered about zero field, has high sensitivity, and produces a magnetoresistance considerably greater than that produced by prior art sensors which used AMR principles. It is posssible, by appropriate design choices, to produce a sensor which has a response equal to the sum of the SV magnetoresistance described above and the AMR response upon which prior art MR sensors were based.
- Fig. 9 shows a plot of the SV magnetoresistance, which varies as the cosine of the angle between the magnetizations M1 and M2 due to the two ferromagnetic layers 12, 16, and this value is independent of the direction of current flow I. Also shown is a plot of AMR in which a component of resistance varies as cos 2 of the angle between the magnetization and the direction of current flow I. Magnetization M2 is fixed in position and magnetization M1 is oriented substantially perpendicular to M2 at zero applied field. The applied field has two orthogonal components H a and H b . H a corresponds to the excitation field to be detected, and H b is a static bias field.
- the graph in Fig.9 is based on a value H b of 2.5 Oe (1.19 kA.m -1 ) and H a with the value indicated.
- the graph of AMR is based on the orientation of the two ferromagnetic layers with respect to the direction of current flow I shown in the diagram at the top of Fig. 9.
- the best effect for actual MR devices is to add the two effects, SV and AMR, by orienting the direction of current I substantially 90 degrees to the bisector of the angle between M 1 and M 2 .
- the total response is larger than the SV value and the slope is higher.
- Fig. 10 show that an inappropriate combination of the SV and AMR effects can also degrade the amplitude of the magnetoresistance.
- the magnetization is oriented as shown in the diagram at the top of Fig. 10.
- the combined response is less than the SV value and the slope is lower.
- Fig. 11 shows experimental data which demonstrate the SV and AMR effect combining in a particular fashion to obtain both the largest and smallest total MR response.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
Claims (11)
- Capteur magnétorésistif comprenant :une première (12) et une seconde (16) couches à film mince constituées d'un matériau ferromagnétique séparées par une couche de séparation (14) à film mince, la direction de magnétisation de ladite première couche (12) de matériau ferromagnétique étant sensiblement perpendiculaire à la direction de magnétisation de ladite seconde couche (16) de matériau ferromagnétique à un champ magnétique appliqué nul ;un moyen de conduction (30, 32) pour appliquer une circulation du courant à travers ledit capteur magnétorésistif pour permettre la détection des variations de la résistivité dudit capteur magnétorésistif ;
le capteur étant caractérisé en ce que :la couche de séparation (14) est constituée d'un matériau métallique non magnétique choisi dans le groupe qui est constitué de Ag, Cu, Au, Pt et Pd ; et en ce que les variations de résistivité du capteur magnétorésistif sont dues à la différence de rotation des directions de magnétisation dans lesdites couches de matériaux ferromagnétiques comme une fonction du champ magnétique qui est détecté. - Capteur magnétorésistif selon la revendication 1, comprenant en outre :un moyen (18) pour fixer la direction de la magnétisation de ladite seconde couche (16) de matériau ferromagnétique ; et dans lequel lesdites variations de résistivité sont produites comme résultat de la rotation de la direction de la magnétisation dans ladite première couche (12) de matériau ferromagnétique.
- Capteur magnétorésistif selon la revendication 2, dans lequel ladite seconde couche (16) de matériau ferromagnétique présente une coercivité plus élevée que la coercivité de ladite première couche de matériau ferromagnétique, pour fixer de ce fait la direction de magnétisation de ladite seconde couche de matériau ferromagnétique.
- Capteur magnétorésistif selon la revendication 2, dans lequel ledit moyen pour fixer la direction de magnétisation de ladite seconde couche (16) de matériau ferromagnétique comprend une couche de fixation à film mince (18) constituée d'un matériau anti-ferromagnétique en contact direct avec ladite seconde couche de matériau ferromagnétique.
- Capteur magnétorésistif selon la revendication 2, dans lequel ledit moyen pour fixer la direction de magnétisation de ladite seconde couche (16) de matériau ferromagnétique comprend une couche à film mince (18) constituée d'un matériau ferromagnétique dur en contact direct avec ladite seconde couche (16) de matériau ferromagnétique.
- Capteur magnétorésistif selon l'une quelconque des revendications précédentes, dans lequel ladite première couche (12) de matériau ferromagnétique présente une épaisseur à l'intérieur de la plage de 5 à 15 nanomètres.
- Capteur magnétorésistif selon l'une quelconque des revendications précédentes, dans lequel ladite couche de matériau métallique non magnétique (14) présente une épaisseur à l'intérieur de la plage de 1,6 à 4 nanomètres.
- Capteur magnétorésistif selon l'une quelconque des revendications précédentes, dans lequel la direction de magnétisation desdites couches de matériau ferromagnétique est établie par rapport à la direction de ladite circulation du courant, d'une manière telle que la magnétorésistance anisotrope est ajoutée auxdits changements de résistance dudit capteur magnétorésistif dus à la différence de rotation des directions de magnétisation desdites couches de matériaux ferromagnétiques.
- Capteur magnétorésistif selon l'une quelconque des revendications précédentes, comprenant en outre, un moyen pour produire une polarisation longitudinale suffisante pour maintenir ladite première couche de matériau ferromagnétique dans un seul état de domaines.
- Capteur magnétorésistif selon la revendication 9, dans lequel ledit moyen pour produire une polarisation longitudinale comprend une couche de polarisation constituée de matériau anti-ferromagnétique en contact direct avec les régions d'extrémité de seulement ladite première couche de matériau ferromagnétique.
- Capteur magnétorésistif selon la revendication 9, dans lequel ledit moyen pour produire une polarisation longitudinale comprend une couche de polarisation constituée d'un matériau ferromagnétique dur (26) en contact direct avec seulement les régions d'extrémité de ladite première couche de matériau ferromagnétique, ladite couche de polarisation étant ajoutée à chaque couche ferromagnétique dure (18) pour fixer la direction de magnétisation de ladite seconde couche de matériau ferromagnétique.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US625343 | 1984-06-27 | ||
US07/625,343 US5206590A (en) | 1990-12-11 | 1990-12-11 | Magnetoresistive sensor based on the spin valve effect |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0490608A2 EP0490608A2 (fr) | 1992-06-17 |
EP0490608A3 EP0490608A3 (en) | 1993-05-26 |
EP0490608B1 true EP0490608B1 (fr) | 2000-03-08 |
Family
ID=24505628
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP91311417A Expired - Lifetime EP0490608B1 (fr) | 1990-12-11 | 1991-12-09 | Capteur magnétorésistif |
Country Status (9)
Country | Link |
---|---|
US (1) | US5206590A (fr) |
EP (1) | EP0490608B1 (fr) |
JP (1) | JPH0821166B2 (fr) |
KR (1) | KR960015920B1 (fr) |
CN (1) | CN1022142C (fr) |
CA (1) | CA2054580C (fr) |
DE (1) | DE69132027T2 (fr) |
MY (1) | MY107672A (fr) |
SG (1) | SG42305A1 (fr) |
Families Citing this family (387)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3088478B2 (ja) * | 1990-05-21 | 2000-09-18 | 財団法人生産開発科学研究所 | 磁気抵抗効果素子 |
US5390061A (en) | 1990-06-08 | 1995-02-14 | Hitachi, Ltd. | Multilayer magnetoresistance effect-type magnetic head |
JP3483895B2 (ja) * | 1990-11-01 | 2004-01-06 | 株式会社東芝 | 磁気抵抗効果膜 |
MY108176A (en) * | 1991-02-08 | 1996-08-30 | Hitachi Global Storage Tech Netherlands B V | Magnetoresistive sensor based on oscillations in the magnetoresistance |
US5159513A (en) * | 1991-02-08 | 1992-10-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
JPH04285713A (ja) * | 1991-03-14 | 1992-10-09 | Hitachi Ltd | 磁気抵抗効果型磁気ヘッドおよびその製造方法 |
DE69219936T3 (de) * | 1991-03-29 | 2008-03-06 | Kabushiki Kaisha Toshiba | Magnetowiderstandseffekt-Element |
US5808843A (en) * | 1991-05-31 | 1998-09-15 | Hitachi, Ltd. | Magnetoresistance effect reproduction head |
US5341261A (en) * | 1991-08-26 | 1994-08-23 | International Business Machines Corporation | Magnetoresistive sensor having multilayer thin film structure |
JP2812826B2 (ja) * | 1991-09-04 | 1998-10-22 | 株式会社日立製作所 | 磁気抵抗効果型磁気ヘッドおよびその製造方法 |
US5304975A (en) * | 1991-10-23 | 1994-04-19 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element and magnetoresistance effect sensor |
US5633092A (en) * | 1991-12-10 | 1997-05-27 | British Technology Group Ltd. | Magnetostrictive material |
FR2685489B1 (fr) * | 1991-12-23 | 1994-08-05 | Thomson Csf | Capteur de champ magnetique faible a effet magnetoresistif. |
JP3022023B2 (ja) * | 1992-04-13 | 2000-03-15 | 株式会社日立製作所 | 磁気記録再生装置 |
US5323285A (en) * | 1992-06-23 | 1994-06-21 | Eastman Kodak Company | Shielded dual element magnetoresistive reproduce head exhibiting high density signal amplification |
JPH06220609A (ja) * | 1992-07-31 | 1994-08-09 | Sony Corp | 磁気抵抗効果膜及びその製造方法並びにそれを用いた磁気抵抗効果素子、磁気抵抗効果型磁気ヘッド |
JP3381957B2 (ja) * | 1992-08-03 | 2003-03-04 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッドおよび磁気センサ |
US5500633A (en) * | 1992-08-03 | 1996-03-19 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
US5682284A (en) * | 1992-08-25 | 1997-10-28 | Seagate Technology, Inc. | Read sensitivity function for barberpole bias design magnetoresistive sensor having curved current contacts |
EP0585008B1 (fr) * | 1992-08-25 | 2000-11-15 | Seagate Technology LLC | Détecteur magnétorésistif et son procédé de réalisation |
JP2725977B2 (ja) * | 1992-08-28 | 1998-03-11 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 磁気抵抗センサ及びその製造方法、磁気記憶システム |
DE4232244C2 (de) * | 1992-09-25 | 1998-05-14 | Siemens Ag | Magnetowiderstands-Sensor |
EP0594243A3 (en) * | 1992-10-19 | 1994-09-21 | Philips Electronics Nv | Magnetic field sensor |
US5549978A (en) * | 1992-10-30 | 1996-08-27 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
US5780176A (en) * | 1992-10-30 | 1998-07-14 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
US5931032A (en) | 1998-04-16 | 1999-08-03 | Gregory; Edwin H. | Cutter and blow resistant lock |
US5287238A (en) * | 1992-11-06 | 1994-02-15 | International Business Machines Corporation | Dual spin valve magnetoresistive sensor |
US5373238A (en) * | 1992-11-06 | 1994-12-13 | International Business Machines Corporation | Four layer magnetoresistance device and method for making a four layer magnetoresistance device |
MY108956A (en) | 1992-11-12 | 1996-11-30 | Quantum Peripherals Colorado Inc | Magnetoresistive device and method having improved barkhausen noise suppression |
US5617071A (en) * | 1992-11-16 | 1997-04-01 | Nonvolatile Electronics, Incorporated | Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses |
US5569544A (en) * | 1992-11-16 | 1996-10-29 | Nonvolatile Electronics, Incorporated | Magnetoresistive structure comprising ferromagnetic thin films and intermediate layers of less than 30 angstroms formed of alloys having immiscible components |
EP0678213B1 (fr) * | 1992-11-16 | 2003-02-19 | NVE Corporation | Structure magnetoresistive a couche d'alliage |
US5301079A (en) * | 1992-11-17 | 1994-04-05 | International Business Machines Corporation | Current biased magnetoresistive spin valve sensor |
KR100225179B1 (ko) * | 1992-11-30 | 1999-10-15 | 니시무로 타이죠 | 박막 자기 헤드 및 자기 저항 효과형 헤드 |
US5432373A (en) * | 1992-12-15 | 1995-07-11 | Bell Communications Research, Inc. | Magnetic spin transistor |
DE4243357A1 (de) * | 1992-12-21 | 1994-06-23 | Siemens Ag | Magnetowiderstands-Sensor mit verkürzten Meßschichten |
DE4401476A1 (de) * | 1993-01-20 | 1994-07-28 | Fuji Electric Co Ltd | Magneto-resistives Element, magnetisches Induktionselement und solche enthaltender Dünnschicht-Magnetkopf |
US5422571A (en) * | 1993-02-08 | 1995-06-06 | International Business Machines Corporation | Magnetoresistive spin valve sensor having a nonmagnetic back layer |
DE4408274C2 (de) * | 1993-03-12 | 2001-04-26 | Toshiba Kawasaki Kk | Magnetoresistenzeffekt-Element |
US5656381A (en) * | 1993-03-24 | 1997-08-12 | Sanyo Electric Co., Ltd. | Magnetoresistance-effect element |
US5736921A (en) * | 1994-03-23 | 1998-04-07 | Sanyo Electric Co., Ltd. | Magnetoresistive element |
US5585198A (en) * | 1993-10-20 | 1996-12-17 | Sanyo Electric Co., Ltd. | Magnetorsistance effect element |
JP2784457B2 (ja) * | 1993-06-11 | 1998-08-06 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 磁気抵抗センサ装置 |
EP0629998A2 (fr) * | 1993-06-18 | 1994-12-21 | International Business Machines Corporation | Film magnéto-résistant, procédé pour sa fabrication et détecteur magnéto-résistant |
US5966272A (en) * | 1993-06-21 | 1999-10-12 | Read-Rite Corporation | Magnetoresistive read head having an exchange layer |
KR0131548B1 (ko) * | 1993-07-19 | 1998-04-18 | 윌리암 티. 엘리스 | 경사진 하드바이어스 자기저항성헤드를 갖는 자기저장시스템 |
US5381125A (en) * | 1993-07-20 | 1995-01-10 | At&T Corp. | Spinodally decomposed magnetoresistive devices |
DE69427536T2 (de) * | 1993-07-23 | 2002-04-18 | Nonvolatile Electronics Inc | Geschichtete magnetische struktur |
US5949707A (en) * | 1996-09-06 | 1999-09-07 | Nonvolatile Electronics, Incorporated | Giant magnetoresistive effect memory cell |
JPH0766033A (ja) * | 1993-08-30 | 1995-03-10 | Mitsubishi Electric Corp | 磁気抵抗素子ならびにその磁気抵抗素子を用いた磁性薄膜メモリおよび磁気抵抗センサ |
JP2860233B2 (ja) * | 1993-09-09 | 1999-02-24 | 株式会社日立製作所 | 巨大磁気抵抗効果型磁気ヘッドおよびそれを用いた磁気記録再生装置 |
US5475304A (en) * | 1993-10-01 | 1995-12-12 | The United States Of America As Represented By The Secretary Of The Navy | Magnetoresistive linear displacement sensor, angular displacement sensor, and variable resistor using a moving domain wall |
KR950704820A (ko) * | 1993-10-06 | 1995-11-20 | 프레데릭 얀 스미트 | 자기 저항 장치 및, 이 장치를 이용한 자기헤드(Magneto-resistance device, and magnetic head employing such a device) |
US5408377A (en) * | 1993-10-15 | 1995-04-18 | International Business Machines Corporation | Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor |
US5465185A (en) * | 1993-10-15 | 1995-11-07 | International Business Machines Corporation | Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor |
US5422621A (en) * | 1993-10-29 | 1995-06-06 | International Business Machines Corporation | Oriented granular giant magnetoresistance sensor |
EP0651374A3 (fr) * | 1993-11-01 | 1995-09-06 | Hewlett Packard Co | Une tête magnétorésistive planaire. |
US5406433A (en) * | 1993-12-01 | 1995-04-11 | Eastman Kodak Company | Dual magnetoresistive head for reproducing very narrow track width short wavelength data |
US5452163A (en) * | 1993-12-23 | 1995-09-19 | International Business Machines Corporation | Multilayer magnetoresistive sensor |
FR2715507B1 (fr) * | 1994-01-25 | 1996-04-05 | Commissariat Energie Atomique | Magnétorésistance multicouche polarisée. |
US6002553A (en) * | 1994-02-28 | 1999-12-14 | The United States Of America As Represented By The United States Department Of Energy | Giant magnetoresistive sensor |
EP0676746B1 (fr) * | 1994-03-09 | 1999-08-04 | Eastman Kodak Company | Tête de reproduction magnétorésistive à spin-valve duale |
US5712751A (en) * | 1994-03-17 | 1998-01-27 | Kabushiki Kaisha Toshiba | Magnetic sensor and magnetic recording-reproducing head and magnetic recording-reproducing apparatus using same |
US5695858A (en) * | 1994-03-23 | 1997-12-09 | Sanyo Electric Co., Ltd. | Magnetoresistive element |
JP2785678B2 (ja) * | 1994-03-24 | 1998-08-13 | 日本電気株式会社 | スピンバルブ膜およびこれを用いた再生ヘッド |
EP0677750A3 (fr) * | 1994-04-15 | 1996-04-24 | Hewlett Packard Co | Capteur magnétorésistif géant avec une couche d'ancrage. |
WO1995028649A1 (fr) * | 1994-04-15 | 1995-10-26 | Philips Electronics N.V. | Capteur de champ magnetique, instrument comprenant ce capteur et procede de fabrication de ce capteur |
US5546253A (en) * | 1994-05-06 | 1996-08-13 | Quantum Corporation | Digitial output magnetoresistive (DOMR) head and methods associated therewith |
US5442508A (en) | 1994-05-25 | 1995-08-15 | Eastman Kodak Company | Giant magnetoresistive reproduce head having dual magnetoresistive sensor |
US5583725A (en) * | 1994-06-15 | 1996-12-10 | International Business Machines Corporation | Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor |
WO1995035507A1 (fr) * | 1994-06-18 | 1995-12-28 | The University Of Sheffield | Dispositif sensible a un champ magnetique |
FR2722918B1 (fr) * | 1994-07-21 | 1996-08-30 | Commissariat Energie Atomique | Capteur a magnetoresistance multicouche autopolarisee |
US5528440A (en) * | 1994-07-26 | 1996-06-18 | International Business Machines Corporation | Spin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the element |
US5648031A (en) * | 1994-07-28 | 1997-07-15 | Custom Plastics Molding, Inc. | Method of forming antislip surfaces on thermoformed products |
JPH0845029A (ja) * | 1994-08-01 | 1996-02-16 | Alps Electric Co Ltd | 薄膜磁気ヘッド |
JPH0849062A (ja) * | 1994-08-04 | 1996-02-20 | Sanyo Electric Co Ltd | 磁気抵抗効果膜 |
US5557491A (en) * | 1994-08-18 | 1996-09-17 | International Business Machines Corporation | Two terminal single stripe orthogonal MR head having biasing conductor integral with the lead layers |
JP2694806B2 (ja) * | 1994-08-29 | 1997-12-24 | 日本電気株式会社 | 磁気抵抗効果素子およびその製造方法 |
US5580602A (en) * | 1994-09-01 | 1996-12-03 | International Business Machines Corporation | Process for making a thin film magnetic head |
JPH0877519A (ja) * | 1994-09-08 | 1996-03-22 | Fujitsu Ltd | 磁気抵抗効果型トランスジューサ |
US6001430A (en) * | 1994-09-08 | 1999-12-14 | Nec Corporation | Magnetoresistance effect film and production process thereof |
JP2738312B2 (ja) * | 1994-09-08 | 1998-04-08 | 日本電気株式会社 | 磁気抵抗効果膜およびその製造方法 |
US5898546A (en) * | 1994-09-08 | 1999-04-27 | Fujitsu Limited | Magnetoresistive head and magnetic recording apparatus |
JPH08130337A (ja) * | 1994-09-09 | 1996-05-21 | Sanyo Electric Co Ltd | 磁気抵抗素子及びその製造方法 |
JP3952515B2 (ja) * | 1994-09-09 | 2007-08-01 | 富士通株式会社 | 磁気抵抗効果素子、磁気記録装置及び磁気抵抗効果素子の製造方法 |
JP3574186B2 (ja) * | 1994-09-09 | 2004-10-06 | 富士通株式会社 | 磁気抵抗効果素子 |
US5991125A (en) * | 1994-09-16 | 1999-11-23 | Kabushiki Kaisha Toshiba | Magnetic head |
US5434826A (en) * | 1994-09-26 | 1995-07-18 | Read-Rite Corporation | Multilayer hard bias films for longitudinal biasing in magnetoresistive transducer |
US5561368A (en) * | 1994-11-04 | 1996-10-01 | International Business Machines Corporation | Bridge circuit magnetic field sensor having spin valve magnetoresistive elements formed on common substrate |
US5523898A (en) * | 1994-11-08 | 1996-06-04 | International Business Machines Corporation | Partial MR sensor bias current during write |
US5588199A (en) * | 1994-11-14 | 1996-12-31 | International Business Machines Corporation | Lapping process for a single element magnetoresistive head |
US5576914A (en) * | 1994-11-14 | 1996-11-19 | Read-Rite Corporation | Compact read/write head having biased GMR element |
US5539598A (en) * | 1994-12-08 | 1996-07-23 | International Business Machines Corporation | Electrostatic protection for a shielded MR sensor |
US5735036A (en) * | 1994-12-16 | 1998-04-07 | International Business Machines Corporation | Lapping process for minimizing shorts and element recession at magnetic head air bearing surface |
US5749769A (en) * | 1994-12-16 | 1998-05-12 | International Business Machines Corporation | Lapping process using micro-advancement for optimizing flatness of a magnetic head air bearing surface |
US5603156A (en) * | 1994-12-16 | 1997-02-18 | International Business Machines Corporation | Lapping process for minimizing shorts and element recession at magnetic head air bearing surface |
JPH08180328A (ja) * | 1994-12-21 | 1996-07-12 | Fujitsu Ltd | スピンバルブ磁気抵抗効果素子及びその製造方法 |
US5491605A (en) * | 1994-12-23 | 1996-02-13 | International Business Machines Corporation | Shorted magnetoresistive head elements for electrical overstress and electrostatic discharge protection |
US5493467A (en) * | 1994-12-27 | 1996-02-20 | International Business Machines Corporation | Yoke spin valve MR read head |
US5664316A (en) * | 1995-01-17 | 1997-09-09 | International Business Machines Corporation | Method of manufacturing magnetoresistive read transducer having a contiguous longitudinal bias layer |
FR2729790A1 (fr) * | 1995-01-24 | 1996-07-26 | Commissariat Energie Atomique | Magnetoresistance geante, procede de fabrication et application a un capteur magnetique |
JP2748876B2 (ja) * | 1995-01-27 | 1998-05-13 | 日本電気株式会社 | 磁気抵抗効果膜 |
JPH08221719A (ja) * | 1995-02-16 | 1996-08-30 | Tdk Corp | スピンバルブ磁気抵抗ヘッド及びその製造方法 |
DE19507303A1 (de) * | 1995-03-02 | 1996-09-05 | Siemens Ag | Sensoreinrichtung mit einer Brückenschaltung von magnetoresistiven Sensorelementen |
US5608593A (en) * | 1995-03-09 | 1997-03-04 | Quantum Peripherals Colorado, Inc. | Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique |
JPH08287420A (ja) * | 1995-04-11 | 1996-11-01 | Hitachi Metals Ltd | 磁気抵抗効果膜 |
US6741494B2 (en) * | 1995-04-21 | 2004-05-25 | Mark B. Johnson | Magnetoelectronic memory element with inductively coupled write wires |
JP3629309B2 (ja) * | 1995-09-05 | 2005-03-16 | アルプス電気株式会社 | 薄膜磁気ヘッド |
JP2778626B2 (ja) * | 1995-06-02 | 1998-07-23 | 日本電気株式会社 | 磁気抵抗効果膜及びその製造方法並びに磁気抵抗効果素子 |
US5573809A (en) * | 1995-06-05 | 1996-11-12 | Quantum Peripherals Colorado, Inc. | Process for forming a magnetoresistive device |
US5532892A (en) * | 1995-06-05 | 1996-07-02 | Quantum Peripherals Colorado, Inc. | Soft adjacent layer biased magnetoresistive device incorporating a natural flux closure design utilizing coplanar permanent magnet thin film stabilization |
DE69619166T2 (de) * | 1995-06-15 | 2002-06-20 | Tdk Corp | Magnetoresistiver Wandler mit "Spin-Valve" Struktur und Herstellungsverfahren |
SG46731A1 (en) * | 1995-06-30 | 1998-02-20 | Ibm | Spin valve magnetoresistive sensor with antiparallel pinned layer and improved exchange bias layer and magnetic recording system using the senor |
JP2849354B2 (ja) * | 1995-07-28 | 1999-01-20 | ティーディーケイ株式会社 | 磁気変換素子及び薄膜磁気ヘッド |
US5896252A (en) * | 1995-08-11 | 1999-04-20 | Fujitsu Limited | Multilayer spin valve magneto-resistive effect magnetic head with free magnetic layer including two sublayers and magnetic disk drive including same |
US5638237A (en) * | 1995-08-25 | 1997-06-10 | International Business Machines Corporation | Fusible-link removable shorting of magnetoresistive heads for electrostatic discharge protection |
US5701222A (en) * | 1995-09-11 | 1997-12-23 | International Business Machines Corporation | Spin valve sensor with antiparallel magnetization of pinned layers |
JPH0983039A (ja) * | 1995-09-14 | 1997-03-28 | Nec Corp | 磁気抵抗効果素子 |
US5768067A (en) | 1995-09-19 | 1998-06-16 | Alps Electric Co., Ltd. | Magnetoresistive head using exchange anisotropic magnetic field with an antiferromagnetic layer |
JP2746226B2 (ja) * | 1995-09-23 | 1998-05-06 | 日本電気株式会社 | 磁気抵抗効果素子を用いた磁界の検出方法 |
EP0768641A1 (fr) * | 1995-10-09 | 1997-04-16 | TDK Corporation | Procédé de fabrication d'un appareil à tête magnétique avec tête magnétorésistif à effet spin-valve |
US5654854A (en) * | 1995-11-30 | 1997-08-05 | Quantum Corporation | Longitudinally biased magnetoresistive sensor having a concave shaped active region to reduce Barkhausen noise by achieving a substantially single magnetic domain state |
KR100201681B1 (ko) * | 1996-01-03 | 1999-06-15 | 포만 제프리 엘 | 직교 자기저항 센서와 자기 저장 시스템 및 직교 자기저항 센서 제조 방법 |
US5969896A (en) * | 1996-01-08 | 1999-10-19 | Hitachi, Ltd. | Magnetic recording/reproducing device with a function of correcting waveform of magnetoresistive-effect head |
JPH09205234A (ja) * | 1996-01-26 | 1997-08-05 | Nec Corp | 磁気抵抗効果素子及び磁気抵抗効果センサ |
US5936810A (en) * | 1996-02-14 | 1999-08-10 | Hitachi, Ltd. | Magnetoresistive effect head |
US6545847B2 (en) | 1996-02-14 | 2003-04-08 | Hitachi, Ltd. | Magnetoresistive effect head |
US5650887A (en) * | 1996-02-26 | 1997-07-22 | International Business Machines Corporation | System for resetting sensor magnetization in a spin valve magnetoresistive sensor |
DE19612422C2 (de) * | 1996-03-28 | 2000-06-15 | Siemens Ag | Potentiometereinrichtung mit einem linear verschiebbaren Stellelement und signalerzeugenden Mitteln |
JP3388685B2 (ja) * | 1996-04-01 | 2003-03-24 | ティーディーケイ株式会社 | 磁気ヘッド |
JP3327375B2 (ja) * | 1996-04-26 | 2002-09-24 | 富士通株式会社 | 磁気抵抗効果型トランスデューサ、その製造方法及び磁気記録装置 |
US5668688A (en) * | 1996-05-24 | 1997-09-16 | Quantum Peripherals Colorado, Inc. | Current perpendicular-to-the-plane spin valve type magnetoresistive transducer |
US6166539A (en) * | 1996-10-30 | 2000-12-26 | Regents Of The University Of Minnesota | Magnetoresistance sensor having minimal hysteresis problems |
US5747997A (en) * | 1996-06-05 | 1998-05-05 | Regents Of The University Of Minnesota | Spin-valve magnetoresistance sensor having minimal hysteresis problems |
US5742459A (en) * | 1996-06-20 | 1998-04-21 | Read-Rite Corporation | Magnetic head having encapsulated magnetoresistive transducer and multilayered lead structure |
US5939134A (en) * | 1996-07-10 | 1999-08-17 | International Business Machines Corporation | Process for making a thin film magnetic head |
US5742162A (en) * | 1996-07-17 | 1998-04-21 | Read-Rite Corporation | Magnetoresistive spin valve sensor with multilayered keeper |
JP2856165B2 (ja) * | 1996-08-12 | 1999-02-10 | 日本電気株式会社 | 磁気抵抗効果素子及びその製造方法 |
US5793279A (en) * | 1996-08-26 | 1998-08-11 | Read-Rite Corporation | Methods and compositions for optimizing interfacial properties of magnetoresistive sensors |
US5966322A (en) * | 1996-09-06 | 1999-10-12 | Nonvolatile Electronics, Incorporated | Giant magnetoresistive effect memory cell |
US5945904A (en) * | 1996-09-06 | 1999-08-31 | Ford Motor Company | Giant magnetoresistors with high sensitivity and reduced hysteresis and thin layers |
US5869963A (en) * | 1996-09-12 | 1999-02-09 | Alps Electric Co., Ltd. | Magnetoresistive sensor and head |
US5739988A (en) * | 1996-09-18 | 1998-04-14 | International Business Machines Corporation | Spin valve sensor with enhanced magnetoresistance |
SG72760A1 (en) * | 1996-09-19 | 2000-05-23 | Tdk Corp | Ferromagnetic tunnel junction magnetoresistive element and magnetic head |
JPH1098220A (ja) * | 1996-09-20 | 1998-04-14 | Sanyo Electric Co Ltd | 磁気抵抗効果素子 |
JP3291208B2 (ja) | 1996-10-07 | 2002-06-10 | アルプス電気株式会社 | 磁気抵抗効果型センサおよびその製造方法とそのセンサを備えた磁気ヘッド |
JP2924819B2 (ja) | 1996-10-09 | 1999-07-26 | 日本電気株式会社 | 磁気抵抗効果膜及びその製造方法 |
US5715120A (en) * | 1996-10-09 | 1998-02-03 | International Business Machines Corporation | Magnetoresistance sensor with enhanced magnetoresistive effect |
JP3593220B2 (ja) * | 1996-10-11 | 2004-11-24 | アルプス電気株式会社 | 磁気抵抗効果多層膜 |
JP2924825B2 (ja) * | 1996-10-31 | 1999-07-26 | 日本電気株式会社 | 磁気抵抗効果素子及びこれを用いた磁気抵抗効果センサ |
SG88758A1 (en) * | 1996-11-20 | 2002-05-21 | Toshiba Kk | Sputtering target and anti-ferromagnetic material film formed using thereof and magneto-resistance effect element formed by using the same |
JPH10162320A (ja) * | 1996-11-26 | 1998-06-19 | Nec Corp | 磁気抵抗効果型ヘッドおよびその使用方法 |
US5796561A (en) * | 1996-11-27 | 1998-08-18 | International Business Machines Corporation | Self-biased spin valve sensor |
JPH10162322A (ja) | 1996-11-28 | 1998-06-19 | Nec Corp | 磁気抵抗効果型複合ヘッドおよびその製造方法 |
JPH10188235A (ja) * | 1996-12-26 | 1998-07-21 | Nec Corp | 磁気抵抗効果膜及びその製造方法 |
US6090498A (en) * | 1996-12-27 | 2000-07-18 | Tdk Corporation | Magnetoresistance effect element and magnetoresistance device |
JPH10198927A (ja) * | 1997-01-08 | 1998-07-31 | Nec Corp | 磁気抵抗効果膜およびその製造方法 |
JP2937237B2 (ja) * | 1997-01-22 | 1999-08-23 | 日本電気株式会社 | 磁気抵抗効果ヘッドおよびその初期化方法 |
JP3219713B2 (ja) * | 1997-02-07 | 2001-10-15 | アルプス電気株式会社 | 磁気抵抗効果素子の製造方法 |
DE69826899T2 (de) * | 1997-02-14 | 2005-10-13 | Alps Electric Co., Ltd. | Rotationsdetektionsvorrichtung für Mehrfachrotationskörper |
JP3368788B2 (ja) * | 1997-02-17 | 2003-01-20 | ティーディーケイ株式会社 | スピンバルブ磁気抵抗素子を備えた磁気ヘッドの検査方法及び検査装置 |
JPH10241124A (ja) * | 1997-02-28 | 1998-09-11 | Tdk Corp | スピンバルブ磁気抵抗素子の磁気特性制御方法及び該素子を備えた磁気ヘッドの磁気特性制御方法 |
JP3886589B2 (ja) | 1997-03-07 | 2007-02-28 | アルプス電気株式会社 | 巨大磁気抵抗効果素子センサ |
US6052262A (en) * | 1997-03-14 | 2000-04-18 | Kabushiki Kaisha Toshiba | Magneto-resistance effect element and magnetic head |
JP2914339B2 (ja) * | 1997-03-18 | 1999-06-28 | 日本電気株式会社 | 磁気抵抗効果素子並びにそれを用いた磁気抵抗効果センサ及び磁気抵抗検出システム |
JP3334552B2 (ja) * | 1997-03-21 | 2002-10-15 | ティーディーケイ株式会社 | スピンバルブ磁気抵抗素子を備えた磁気ヘッドの検査方法及び装置 |
JP2924845B2 (ja) * | 1997-03-24 | 1999-07-26 | ティーディーケイ株式会社 | スピンバルブ磁気抵抗素子を備えた磁気ヘッド及びその製造方法 |
JP2933056B2 (ja) * | 1997-04-30 | 1999-08-09 | 日本電気株式会社 | 磁気抵抗効果素子並びにこれを用いた磁気抵抗効果センサ、磁気抵抗検出システム及び磁気記憶システム |
US6118622A (en) * | 1997-05-13 | 2000-09-12 | International Business Machines Corporation | Technique for robust resetting of spin valve head |
US5748399A (en) * | 1997-05-13 | 1998-05-05 | International Business Machines Corporation | Resettable symmetric spin valve |
US5825595A (en) * | 1997-05-13 | 1998-10-20 | International Business Machines Corporation | Spin valve sensor with two spun values separated by an insulated current conductor |
JP2950284B2 (ja) | 1997-05-14 | 1999-09-20 | 日本電気株式会社 | 磁気抵抗効果素子、並びにこれを用いた磁気抵抗効果センサ、磁気抵抗検出システム及び磁気記憶システム |
JP2970590B2 (ja) | 1997-05-14 | 1999-11-02 | 日本電気株式会社 | 磁気抵抗効果素子並びにこれを用いた磁気抵抗効果センサ、磁気抵抗検出システム及び磁気記憶システム |
US5871622A (en) * | 1997-05-23 | 1999-02-16 | International Business Machines Corporation | Method for making a spin valve magnetoresistive sensor |
JP3263004B2 (ja) * | 1997-06-06 | 2002-03-04 | アルプス電気株式会社 | スピンバルブ型薄膜素子 |
JPH10340430A (ja) | 1997-06-10 | 1998-12-22 | Fujitsu Ltd | スピンバルブ磁気抵抗効果型ヘッドおよび磁気記憶装置 |
US5792510A (en) * | 1997-06-10 | 1998-08-11 | International Business Machines Corporation | Method for making a chemically-ordered magnetic metal alloy film |
US5768071A (en) * | 1997-06-19 | 1998-06-16 | International Business Machines Corporation | Spin valve sensor with improved magnetic stability of the pinned layer |
JP2985964B2 (ja) * | 1997-06-30 | 1999-12-06 | 日本電気株式会社 | 磁気抵抗効果型ヘッド及びその初期化方法 |
JP3541245B2 (ja) * | 1997-07-15 | 2004-07-07 | 株式会社日立グローバルストレージテクノロジーズ | 磁気ヘッド及びそれを有する磁気記憶装置 |
US5867351A (en) * | 1997-07-25 | 1999-02-02 | International Business Machines Corporation | Spin valve read head with low moment, high coercivity pinning layer |
JP3951192B2 (ja) * | 1997-08-07 | 2007-08-01 | Tdk株式会社 | スピンバルブ型磁気抵抗効果素子およびその設計方法 |
US5856617A (en) * | 1997-09-02 | 1999-01-05 | International Business Machines Corporation | Atomic force microscope system with cantilever having unbiased spin valve magnetoresistive strain gauge |
US5993566A (en) * | 1997-09-03 | 1999-11-30 | International Business Machines Corporation | Fabrication process of Ni-Mn spin valve sensor |
US6033491A (en) * | 1997-09-03 | 2000-03-07 | International Business Machines Corporation | Fabrication process of Ni-Mn spin valve sensor |
JP3274392B2 (ja) * | 1997-09-17 | 2002-04-15 | アルプス電気株式会社 | スピンバルブ型薄膜素子 |
JPH1196519A (ja) * | 1997-09-17 | 1999-04-09 | Alps Electric Co Ltd | スピンバルブ型薄膜素子およびその製造方法 |
JPH1196516A (ja) * | 1997-09-19 | 1999-04-09 | Fujitsu Ltd | スピンバルブ磁気抵抗効果型ヘッドの製造法及びこの製造方法で製造されたスピンバルブ磁気抵抗効果型ヘッド |
US6350487B1 (en) | 1997-09-24 | 2002-02-26 | Alps Electric Co., Ltd. | Spin-valve type thin film element and its manufacturing method |
JP2924875B2 (ja) * | 1997-10-17 | 1999-07-26 | 日本電気株式会社 | 磁気抵抗効果ヘッド |
JP3263016B2 (ja) * | 1997-10-20 | 2002-03-04 | アルプス電気株式会社 | スピンバルブ型薄膜素子 |
JP2962415B2 (ja) | 1997-10-22 | 1999-10-12 | アルプス電気株式会社 | 交換結合膜 |
JP3175922B2 (ja) * | 1997-10-24 | 2001-06-11 | アルプス電気株式会社 | スピンバルブ型薄膜素子の製造方法 |
US5898549A (en) * | 1997-10-27 | 1999-04-27 | International Business Machines Corporation | Anti-parallel-pinned spin valve sensor with minimal pinned layer shunting |
DE69825031T2 (de) | 1997-10-29 | 2005-07-21 | Koninklijke Philips Electronics N.V. | Magnetfeldsensor mit spin tunnelübergang |
US5969523A (en) * | 1997-11-14 | 1999-10-19 | International Business Machines Corporation | Preamplifier bias mode to re-initialize a GMR head after losing initialization |
JPH11161921A (ja) | 1997-12-01 | 1999-06-18 | Nec Corp | 磁気抵抗効果素子およびその製造方法 |
US6175477B1 (en) | 1997-12-05 | 2001-01-16 | International Business Machines Corporation | Spin valve sensor with nonmagnetic oxide seed layer |
US6141191A (en) | 1997-12-05 | 2000-10-31 | International Business Machines Corporation | Spin valves with enhanced GMR and thermal stability |
JP3269999B2 (ja) * | 1997-12-09 | 2002-04-02 | アルプス電気株式会社 | 薄膜磁気ヘッドの製造方法 |
JPH11185224A (ja) * | 1997-12-24 | 1999-07-09 | Tdk Corp | 薄膜磁気ヘッドの製造方法 |
US6072382A (en) * | 1998-01-06 | 2000-06-06 | Nonvolatile Electronics, Incorporated | Spin dependent tunneling sensor |
US5920446A (en) * | 1998-01-06 | 1999-07-06 | International Business Machines Corporation | Ultra high density GMR sensor |
US6300617B1 (en) | 1998-03-04 | 2001-10-09 | Nonvolatile Electronics, Incorporated | Magnetic digital signal coupler having selected/reversal directions of magnetization |
US6074767A (en) * | 1998-03-12 | 2000-06-13 | International Business Machines Corporation | Spin valve magnetoresistive head with two sets of ferromagnetic/antiferromagnetic films having high blocking temperatures and fabrication method |
JP3334599B2 (ja) | 1998-03-12 | 2002-10-15 | ティーディーケイ株式会社 | 磁気抵抗効果素子の磁化方向測定方法及び装置 |
JP3790356B2 (ja) * | 1998-03-19 | 2006-06-28 | 富士通株式会社 | Gmrヘッド、gmrヘッドの製造方法及び磁気ディスク駆動装置 |
US6134090A (en) * | 1998-03-20 | 2000-10-17 | Seagate Technology Llc | Enhanced spin-valve/GMR magnetic sensor with an insulating boundary layer |
JP3456409B2 (ja) | 1998-03-23 | 2003-10-14 | Tdk株式会社 | 薄膜磁気ヘッドの製造方法 |
JP3755291B2 (ja) | 1998-04-02 | 2006-03-15 | Tdk株式会社 | 薄膜磁気ヘッドの製造方法 |
JPH11296823A (ja) | 1998-04-09 | 1999-10-29 | Nec Corp | 磁気抵抗効果素子およびその製造方法、ならびに磁気抵抗効果センサ,磁気記録システム |
JP3838469B2 (ja) | 1998-04-20 | 2006-10-25 | Tdk株式会社 | 磁気抵抗素子の磁気特性制御方法、該素子を備えた磁気ヘッドの磁気特性制御方法、該素子を備えた磁気ヘッド装置、及び磁気ディスク装置 |
US6191926B1 (en) | 1998-05-07 | 2001-02-20 | Seagate Technology Llc | Spin valve magnetoresistive sensor using permanent magnet biased artificial antiferromagnet layer |
US6356420B1 (en) | 1998-05-07 | 2002-03-12 | Seagate Technology Llc | Storage system having read head utilizing GMR and AMr effects |
US6738236B1 (en) | 1998-05-07 | 2004-05-18 | Seagate Technology Llc | Spin valve/GMR sensor using synthetic antiferromagnetic layer pinned by Mn-alloy having a high blocking temperature |
US6127045A (en) * | 1998-05-13 | 2000-10-03 | International Business Machines Corporation | Magnetic tunnel junction device with optimized ferromagnetic layer |
US6063244A (en) * | 1998-05-21 | 2000-05-16 | International Business Machines Corporation | Dual chamber ion beam sputter deposition system |
US6175475B1 (en) | 1998-05-27 | 2001-01-16 | International Business Machines Corporation | Fully-pinned, flux-closed spin valve |
US6086727A (en) * | 1998-06-05 | 2000-07-11 | International Business Machines Corporation | Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system |
US6169647B1 (en) | 1998-06-11 | 2001-01-02 | Seagate Technology Llc | Giant magnetoresistive sensor having weakly pinned ferromagnetic layer |
JP2000030223A (ja) | 1998-07-08 | 2000-01-28 | Tdk Corp | 磁気抵抗効果素子及び薄膜磁気ヘッド |
JP2000030226A (ja) | 1998-07-14 | 2000-01-28 | Tdk Corp | 磁気抵抗効果素子、該素子を備えた薄膜磁気ヘッド、及び該素子の製造方法 |
JP2000040212A (ja) | 1998-07-24 | 2000-02-08 | Alps Electric Co Ltd | スピンバルブ型薄膜素子 |
JP2000057527A (ja) | 1998-08-04 | 2000-02-25 | Alps Electric Co Ltd | スピンバルブ型薄膜素子 |
JP2000057538A (ja) * | 1998-08-05 | 2000-02-25 | Hitachi Ltd | 磁気抵抗センサを用いた磁気ヘッドおよび磁気記録再生装置 |
JP3521755B2 (ja) | 1998-08-11 | 2004-04-19 | Tdk株式会社 | 磁気抵抗効果素子の磁区制御バイアス磁界測定方法及び装置 |
US6175476B1 (en) | 1998-08-18 | 2001-01-16 | Read-Rite Corporation | Synthetic spin-valve device having high resistivity anti parallel coupling layer |
JP3799168B2 (ja) * | 1998-08-20 | 2006-07-19 | 株式会社日立グローバルストレージテクノロジーズ | 磁気記録再生装置 |
US6097579A (en) * | 1998-08-21 | 2000-08-01 | International Business Machines Corporation | Tunnel junction head structure without current shunting |
US6052263A (en) * | 1998-08-21 | 2000-04-18 | International Business Machines Corporation | Low moment/high coercivity pinned layer for magnetic tunnel junction sensors |
US6552882B1 (en) | 1998-09-01 | 2003-04-22 | Nec Corporation | Information reproduction head apparatus and information recording/reproduction system |
US6219212B1 (en) | 1998-09-08 | 2001-04-17 | International Business Machines Corporation | Magnetic tunnel junction head structure with insulating antiferromagnetic layer |
JP3235572B2 (ja) | 1998-09-18 | 2001-12-04 | 日本電気株式会社 | 磁気抵抗効果素子,磁気抵抗効果センサ及びそれらを利用したシステム |
WO2000022612A1 (fr) | 1998-10-12 | 2000-04-20 | Fujitsu Limited | Capteur magnetique, tete magnetique, codeur magnetique et entrainement de disque dur |
JP2000149228A (ja) | 1998-11-05 | 2000-05-30 | Tdk Corp | 薄膜磁気ヘッドの製造方法 |
US6664784B1 (en) | 1998-11-26 | 2003-12-16 | Nec Corporation | Magneto-resistive sensor with ZR base layer and method of fabricating the same |
US6542342B1 (en) | 1998-11-30 | 2003-04-01 | Nec Corporation | Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer |
US6140139A (en) | 1998-12-22 | 2000-10-31 | Pageant Technologies, Inc. | Hall effect ferromagnetic random access memory device and its method of manufacture |
US6277505B1 (en) | 1999-01-21 | 2001-08-21 | Read-Rite Corporation | Read sensor with improved thermal stability and manufacturing method therefor |
US6418000B1 (en) | 1999-01-21 | 2002-07-09 | Read-Rite Corporation | Dual, synthetic spin valve sensor using current pinning |
JP2000215415A (ja) | 1999-01-26 | 2000-08-04 | Nec Corp | 磁気抵抗効果素子 |
JP3959881B2 (ja) | 1999-02-08 | 2007-08-15 | Tdk株式会社 | 磁気抵抗効果センサの製造方法 |
US6469878B1 (en) | 1999-02-11 | 2002-10-22 | Seagate Technology Llc | Data head and method using a single antiferromagnetic material to pin multiple magnetic layers with differing orientation |
US6229729B1 (en) | 1999-03-04 | 2001-05-08 | Pageant Technologies, Inc. (Micromem Technologies, Inc.) | Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory |
US6266267B1 (en) * | 1999-03-04 | 2001-07-24 | Pageant Technologies, Inc. | Single conductor inductive sensor for a non-volatile random access ferromagnetic memory |
US6288929B1 (en) | 1999-03-04 | 2001-09-11 | Pageant Technologies, Inc. | Magneto resistor sensor with differential collectors for a non-volatile random access ferromagnetic memory |
WO2000052699A1 (fr) * | 1999-03-04 | 2000-09-08 | Pageant Technologies (Usa), Inc. | Capteur a magnetoresistance equipe d'une diode montee en court-circuit pour dispositif a memoire vive ferromagnetique non-volatile |
US6330183B1 (en) | 1999-03-04 | 2001-12-11 | Pageant Technologies, Inc. (Micromem Technologies, Inc.) | Dual conductor inductive sensor for a non-volatile random access ferromagnetic memory |
AU3724200A (en) * | 1999-03-04 | 2000-09-21 | Estancia Limited | Dual conductor inductive sensor for a non-volatile random access ferromagnetic memory |
JP2000293823A (ja) | 1999-04-08 | 2000-10-20 | Nec Corp | 磁気抵抗効果素子およびその製造方法、磁気抵抗効果ヘッド並びに磁気記録再生装置 |
US6331773B1 (en) | 1999-04-16 | 2001-12-18 | Storage Technology Corporation | Pinned synthetic anti-ferromagnet with oxidation protection layer |
DE19983948T1 (de) * | 1999-04-20 | 2002-04-11 | Seagate Technology Llc | Spinventilsensor mit spiegelnder Elektronenstreuung in freier Schicht |
US6462919B1 (en) | 1999-04-28 | 2002-10-08 | Seagate Technology Llc | Spin valve sensor with exchange tabs |
US6153320A (en) * | 1999-05-05 | 2000-11-28 | International Business Machines Corporation | Magnetic devices with laminated ferromagnetic structures formed with improved antiferromagnetically coupling films |
JP2001028108A (ja) * | 1999-05-11 | 2001-01-30 | Nec Corp | 磁気抵抗効果ヘッドの製造方法 |
DE10017374B4 (de) * | 1999-05-25 | 2007-05-10 | Siemens Ag | Magnetische Koppeleinrichtung und deren Verwendung |
JP3575672B2 (ja) | 1999-05-26 | 2004-10-13 | Tdk株式会社 | 磁気抵抗効果膜及び磁気抵抗効果素子 |
US6913836B1 (en) | 1999-06-03 | 2005-07-05 | Alps Electric Co., Ltd. | Spin-valve type magnetoresistive sensor and method of manufacturing the same |
JP3710324B2 (ja) | 1999-06-03 | 2005-10-26 | アルプス電気株式会社 | スピンバルブ型薄膜磁気素子及び薄膜磁気ヘッド及びスピンバルブ型薄膜磁気素子の製造方法 |
US6687098B1 (en) | 1999-07-08 | 2004-02-03 | Western Digital (Fremont), Inc. | Top spin valve with improved seed layer |
US6889555B1 (en) * | 1999-07-20 | 2005-05-10 | Fidelica Microsystems, Inc. | Magnetoresistive semiconductor pressure sensors and fingerprint identification/verification sensors using same |
US6694822B1 (en) | 1999-07-20 | 2004-02-24 | Fidelica Microsystems, Inc. | Use of multi-layer thin films as stress sensor |
JP3272329B2 (ja) | 1999-07-26 | 2002-04-08 | アルプス電気株式会社 | 薄膜磁気ヘッド及び浮上式磁気ヘッド |
US6324037B1 (en) | 1999-07-26 | 2001-11-27 | Headway Technologies, Inc. | Magnetically stable spin-valve sensor |
JP3367477B2 (ja) | 1999-07-28 | 2003-01-14 | 日本電気株式会社 | 磁気抵抗効果素子、磁気抵抗効果ヘッド及び磁気抵抗検出システム並びに磁気記憶システム |
US6219209B1 (en) | 1999-07-29 | 2001-04-17 | International Business Machines Corporation | Spin valve head with multiple antiparallel coupling layers |
JP3793669B2 (ja) * | 1999-08-26 | 2006-07-05 | 株式会社日立グローバルストレージテクノロジーズ | 巨大磁気抵抗効果ヘッド、薄膜磁気ヘッドならびに磁気記録再生装置 |
JP2001067625A (ja) | 1999-08-30 | 2001-03-16 | Alps Electric Co Ltd | 磁気抵抗効果型素子及びその製造方法 |
US6788502B1 (en) | 1999-09-02 | 2004-09-07 | International Business Machines Corporation | Co-Fe supermalloy free layer for magnetic tunnel junction heads |
US6259586B1 (en) | 1999-09-02 | 2001-07-10 | International Business Machines Corporation | Magnetic tunnel junction sensor with AP-coupled free layer |
JP2001084530A (ja) | 1999-09-16 | 2001-03-30 | Alps Electric Co Ltd | 磁気抵抗効果素子及びその製造方法 |
US6421212B1 (en) | 1999-09-21 | 2002-07-16 | Read-Rite Corporation | Thin film read head structure with improved bias magnet-to-magnetoresistive element interface and method of fabrication |
US6455177B1 (en) * | 1999-10-05 | 2002-09-24 | Seagate Technology Llc | Stabilization of GMR devices |
US6317297B1 (en) | 1999-10-06 | 2001-11-13 | Read-Rite Corporation | Current pinned dual spin valve with synthetic pinned layers |
US6381105B1 (en) | 1999-10-22 | 2002-04-30 | Read-Rite Corporation | Hybrid dual spin valve sensor and method for making same |
US6542341B1 (en) | 1999-11-18 | 2003-04-01 | International Business Machines Corporation | Magnetic sensors having an antiferromagnetic layer exchange-coupled to a free layer |
US6447935B1 (en) | 1999-11-23 | 2002-09-10 | Read-Rite Corporation | Method and system for reducing assymetry in a spin valve having a synthetic pinned layer |
US6613240B2 (en) | 1999-12-06 | 2003-09-02 | Epion Corporation | Method and apparatus for smoothing thin conductive films by gas cluster ion beam |
US6783635B2 (en) | 1999-12-09 | 2004-08-31 | International Business Machines Corporation | Spin valve sensor free layer structure with a cobalt based layer that promotes magnetic stability and high magnetoresistance |
US6480365B1 (en) | 1999-12-09 | 2002-11-12 | International Business Machines Corporation | Spin valve transistor using a magnetic tunnel junction |
JP2001176027A (ja) | 1999-12-14 | 2001-06-29 | Nec Corp | 磁気抵抗効果ヘッド及びこれを用いた磁気記憶装置 |
JP3817399B2 (ja) * | 1999-12-24 | 2006-09-06 | 株式会社日立グローバルストレージテクノロジーズ | 磁気抵抗センサー |
JP2001229511A (ja) | 2000-02-10 | 2001-08-24 | Fujitsu Ltd | 磁気抵抗効果膜、磁気抵抗効果型ヘッド、情報再生装置、および磁気抵抗効果膜製造方法 |
JP2001236612A (ja) | 2000-02-17 | 2001-08-31 | Tdk Corp | 磁気抵抗センサ、薄膜磁気ヘッド、磁気ヘッド装置及び磁気ディスク装置 |
US6873546B2 (en) * | 2000-03-09 | 2005-03-29 | Richard M. Lienau | Method and apparatus for reading data from a ferromagnetic memory cell |
JP2001256620A (ja) | 2000-03-13 | 2001-09-21 | Hitachi Ltd | 磁気抵抗センサおよびこれを搭載した磁気記録再生装置 |
US6396668B1 (en) | 2000-03-24 | 2002-05-28 | Seagate Technology Llc | Planar double spin valve read head |
JP2001283413A (ja) * | 2000-03-29 | 2001-10-12 | Tdk Corp | スピンバルブ膜の製造方法 |
US6385016B1 (en) | 2000-03-31 | 2002-05-07 | Seagate Technology Llc | Magnetic read head with an insulator layer between an MR sensor and rear portions of current contacts to provide enhanced sensitivity |
US6466419B1 (en) | 2000-03-31 | 2002-10-15 | Seagate Technology Llc | Current perpendicular to plane spin valve head |
US6700760B1 (en) | 2000-04-27 | 2004-03-02 | Seagate Technology Llc | Tunneling magnetoresistive head in current perpendicular to plane mode |
US6496334B1 (en) | 2000-05-26 | 2002-12-17 | Read-Rite Corportion | Data storage and retrieval apparatus with thin film read head having planarized extra gap and shield layers and method of fabrication thereof |
US6473275B1 (en) | 2000-06-06 | 2002-10-29 | International Business Machines Corporation | Dual hybrid magnetic tunnel junction/giant magnetoresistive sensor |
JP3550533B2 (ja) | 2000-07-06 | 2004-08-04 | 株式会社日立製作所 | 磁界センサー、磁気ヘッド、磁気記録再生装置及び磁気記憶素子 |
JP3260741B1 (ja) * | 2000-08-04 | 2002-02-25 | ティーディーケイ株式会社 | 磁気抵抗効果装置およびその製造方法ならびに薄膜磁気ヘッドおよびその製造方法 |
US6853520B2 (en) * | 2000-09-05 | 2005-02-08 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
CN1459094A (zh) * | 2000-09-19 | 2003-11-26 | 西加特技术有限责任公司 | 具有独立消磁场的大磁阻传感器 |
AU2002230791A1 (en) * | 2000-10-26 | 2002-05-06 | University Of Iowa Research Foundation | Unipolar spin diode and transistor and the applications of the same |
US6801408B1 (en) | 2000-11-02 | 2004-10-05 | Western Digital (Fremont), Inc. | Data storage and retrieval apparatus with thin film read head having a planar sensor element and an extra gap and method of fabrication thereof |
US6738237B2 (en) | 2001-01-04 | 2004-05-18 | Hitachi Global Storage Technologies Netherlands B.V. | AP-pinned spin valve design using very thin Pt-Mn AFM layer |
US6473279B2 (en) | 2001-01-04 | 2002-10-29 | International Business Machines Corporation | In-stack single-domain stabilization of free layers for CIP and CPP spin-valve or tunnel-valve read heads |
US6794862B2 (en) * | 2001-05-08 | 2004-09-21 | Ramot At Tel-Aviv University Ltd. | Magnetic thin film sensor based on the extraordinary hall effect |
JP3807254B2 (ja) * | 2001-05-30 | 2006-08-09 | ソニー株式会社 | 磁気抵抗効果素子、磁気抵抗効果型磁気センサ、および磁気抵抗効果型磁気ヘッド |
JP2002367160A (ja) * | 2001-06-05 | 2002-12-20 | Fuji Electric Co Ltd | 磁気記録媒体の製造方法および磁気記録媒体 |
DE10128135A1 (de) * | 2001-06-09 | 2002-12-19 | Bosch Gmbh Robert | Magnetoresistive Schichtanordnung und Gradiometer mit einer derartigen Schichtanordnung |
US20030002231A1 (en) * | 2001-06-29 | 2003-01-02 | Dee Richard Henry | Reduced sensitivity spin valve head for magnetic tape applications |
US20030002232A1 (en) * | 2001-06-29 | 2003-01-02 | Storage Technology Corporation | Apparatus and method of making a reduced sensitivity spin valve sensor apparatus in which a flux carrying capacity is increased |
US6785101B2 (en) | 2001-07-12 | 2004-08-31 | Hitachi Global Storage Technologies Netherlands B.V. | Overlaid lead giant magnetoresistive head with side reading reduction |
JP3955195B2 (ja) | 2001-08-24 | 2007-08-08 | 株式会社日立グローバルストレージテクノロジーズ | 磁界センサー及び磁気ヘッド |
JP2003067904A (ja) | 2001-08-28 | 2003-03-07 | Hitachi Ltd | 磁気抵抗効果型磁気ヘッドおよびその製造方法 |
SG103326A1 (en) * | 2001-11-30 | 2004-04-29 | Inst Data Storage | Magnetic force microscopy having a magnetic probe coated with exchange coupled magnetic mutiple layers |
US6785099B2 (en) | 2002-02-04 | 2004-08-31 | Hitachi Global Storage Technologies Netherlands B.V. | Read gap improvements through high resistance magnetic shield layers |
US7486457B2 (en) * | 2002-02-15 | 2009-02-03 | Hitachi Global Storage Technologies Netherlands B.V. | Method and apparatus for predicting write failure resulting from flying height modulation |
JP2003281705A (ja) | 2002-03-25 | 2003-10-03 | Hitachi Ltd | 磁気ヘッド、磁気ヘッドジンバルアッセンブリ、磁気記録再生装置及び磁性メモリ |
DE10214946B4 (de) * | 2002-04-04 | 2006-01-19 | "Stiftung Caesar" (Center Of Advanced European Studies And Research) | TMR-Sensor |
US6846683B2 (en) * | 2002-05-10 | 2005-01-25 | Infineon Technologies Ag | Method of forming surface-smoothing layer for semiconductor devices with magnetic material layers |
US7005958B2 (en) | 2002-06-14 | 2006-02-28 | Honeywell International Inc. | Dual axis magnetic sensor |
JP4487472B2 (ja) | 2002-07-05 | 2010-06-23 | 株式会社日立製作所 | 磁気抵抗効果素子、及びこれを備える磁気ヘッド、磁気記録装置、磁気メモリ |
WO2004017085A1 (fr) * | 2002-07-26 | 2004-02-26 | Robert Bosch Gmbh | Systeme de couches magnetoresistif et element capteur comprenant ce systeme de couches |
US20040027846A1 (en) * | 2002-08-06 | 2004-02-12 | Thaddeus Schroeder | Method for forming ferromagnetic targets for position sensors |
JP3648504B2 (ja) * | 2002-09-06 | 2005-05-18 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッドおよび磁気再生装置 |
JP3650092B2 (ja) * | 2002-09-09 | 2005-05-18 | Tdk株式会社 | 交換結合膜、スピンバルブ膜、薄膜磁気ヘッド、磁気ヘッド装置及び磁気記録再生装置 |
JPWO2004051629A1 (ja) | 2002-12-05 | 2006-04-06 | 松下電器産業株式会社 | 磁気ディスク装置及びその製造方法 |
JP4147118B2 (ja) | 2003-01-15 | 2008-09-10 | 株式会社日立製作所 | 3端子型磁気ヘッドとそれを搭載した磁気記録再生装置 |
US7016163B2 (en) * | 2003-02-20 | 2006-03-21 | Honeywell International Inc. | Magnetic field sensor |
US6775195B1 (en) | 2003-02-28 | 2004-08-10 | Union Semiconductor Technology Center | Apparatus and method for accessing a magnetoresistive random access memory array |
US7230804B2 (en) * | 2003-05-02 | 2007-06-12 | Hitachi Global Storage Technologies Netherlands B.V. | Method and apparatus for providing a magnetic tunnel transistor with a self-pinned emitter |
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JP4082274B2 (ja) | 2003-05-22 | 2008-04-30 | 株式会社日立製作所 | 磁気センサ及びそれを備える磁気ヘッド |
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JP4469570B2 (ja) * | 2003-07-24 | 2010-05-26 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッドおよび磁気記録再生装置 |
JP2005056538A (ja) * | 2003-08-07 | 2005-03-03 | Tdk Corp | 薄膜磁気ヘッドの製造方法 |
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US7190560B2 (en) * | 2004-02-18 | 2007-03-13 | Hitachi Global Storage Technologies Netherlands B.V. | Self-pinned CPP sensor using Fe/Cr/Fe structure |
JP4433820B2 (ja) * | 2004-02-20 | 2010-03-17 | Tdk株式会社 | 磁気検出素子およびその形成方法ならびに磁気センサ、電流計 |
ATE446581T1 (de) * | 2004-03-12 | 2009-11-15 | Trinity College Dublin | Magnetoresistives medium |
JP4202958B2 (ja) * | 2004-03-30 | 2008-12-24 | 株式会社東芝 | 磁気抵抗効果素子 |
JP2005347495A (ja) * | 2004-06-02 | 2005-12-15 | Tdk Corp | 磁気抵抗効果素子、薄膜磁気ヘッド、磁気ヘッド装置及び磁気記録再生装置 |
JP4692805B2 (ja) * | 2004-06-30 | 2011-06-01 | Tdk株式会社 | 磁気検出素子およびその形成方法 |
US7397637B2 (en) * | 2004-08-30 | 2008-07-08 | Hitachi Global Storage Technologies Netherlands B.V. | Sensor with in-stack bias structure providing enhanced magnetostatic stabilization |
US7557562B2 (en) | 2004-09-17 | 2009-07-07 | Nve Corporation | Inverted magnetic isolator |
CN100340697C (zh) * | 2004-10-28 | 2007-10-03 | 复旦大学 | 一种可提高巨磁电阻效应的自旋阀制备方法 |
CN100368820C (zh) * | 2004-11-10 | 2008-02-13 | 中国科学院物理研究所 | 自旋阀型数字式磁场传感器及其制作方法 |
JP2006139886A (ja) | 2004-11-15 | 2006-06-01 | Hitachi Global Storage Technologies Netherlands Bv | 磁気抵抗効果型磁気ヘッド及びその製造方法 |
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JP4573736B2 (ja) | 2005-08-31 | 2010-11-04 | 三菱電機株式会社 | 磁界検出装置 |
KR100730385B1 (ko) * | 2005-10-19 | 2007-06-19 | 상지대학교산학협력단 | 자성박막을 이용한 맥진 센서 |
JP2007200428A (ja) * | 2006-01-25 | 2007-08-09 | Hitachi Global Storage Technologies Netherlands Bv | 磁気抵抗効果型磁気ヘッド及びその製造方法 |
JP4731393B2 (ja) | 2006-04-28 | 2011-07-20 | 株式会社日立製作所 | 磁気再生ヘッド |
JP2007299880A (ja) * | 2006-04-28 | 2007-11-15 | Toshiba Corp | 磁気抵抗効果素子,および磁気抵抗効果素子の製造方法 |
JP5044157B2 (ja) * | 2006-07-11 | 2012-10-10 | 株式会社東芝 | 磁気抵抗効果素子,磁気ヘッド,および磁気再生装置 |
US7750627B2 (en) * | 2006-10-24 | 2010-07-06 | Headway Technologies, Inc. | Magnetic film sensor having a magnetic film for generating a magnetostriction and a depressed insulating layer |
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JP4964301B2 (ja) * | 2007-05-28 | 2012-06-27 | 三菱電機株式会社 | 磁界検出装置 |
US8519703B2 (en) * | 2008-03-20 | 2013-08-27 | Infineon Technologies Ag | Magnetic sensor device and method of determining resistance values |
US8106654B2 (en) * | 2008-05-27 | 2012-01-31 | Infineon Technologies Ag | Magnetic sensor integrated circuit device and method |
US8093892B2 (en) * | 2008-07-24 | 2012-01-10 | Infineon Technologies Ag | System with 90 degree sense layer magnetic orientation |
JP5032429B2 (ja) * | 2008-09-26 | 2012-09-26 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
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CN101672903B (zh) * | 2009-09-23 | 2011-09-14 | 电子科技大学 | 一种惠斯通电桥式自旋阀磁传感器的制备方法 |
US9081004B2 (en) * | 2009-09-28 | 2015-07-14 | International Business Machines Corporation | Circuit for detecting analytes via nanoparticle-labeled substances with electromagnetic read-write heads |
US8154957B1 (en) | 2010-03-01 | 2012-04-10 | Katsnelson Esfir Z | Magneto-optical device with an optically induced magnetization |
JP5101659B2 (ja) * | 2010-05-25 | 2012-12-19 | 株式会社東芝 | 血圧センサ |
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Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0346817A2 (fr) * | 1988-06-16 | 1989-12-20 | Forschungszentrum Jülich Gmbh | Détecteur de champ magnétique avec une couche mince ferromagnétique |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH651151A5 (de) * | 1979-11-27 | 1985-08-30 | Landis & Gyr Ag | Messwandler zum messen eines insbesondere von einem messstrom erzeugten magnetfeldes. |
US4447839A (en) * | 1980-10-28 | 1984-05-08 | Compagnie Internationale Pour L'informatique Cii-Honeywell Bull (Societe Anonyme) | Magnetoresistant transducer |
NL8101962A (nl) * | 1981-04-22 | 1982-11-16 | Philips Nv | Magnetische sensor. |
US4663685A (en) * | 1985-08-15 | 1987-05-05 | International Business Machines | Magnetoresistive read transducer having patterned longitudinal bias |
US4755897A (en) * | 1987-04-28 | 1988-07-05 | International Business Machines Corporation | Magnetoresistive sensor with improved antiferromagnetic film |
US4785366A (en) * | 1987-07-09 | 1988-11-15 | International Business Machine Corporation | Magnetoresistive read transducer having patterned orientation of longitudinal bias |
DE4027226A1 (de) * | 1990-02-13 | 1991-08-14 | Forschungszentrum Juelich Gmbh | Magnetfeldsensor mit ferromagnetischer, duenner schicht |
-
1990
- 1990-12-11 US US07/625,343 patent/US5206590A/en not_active Expired - Lifetime
-
1991
- 1991-10-31 CA CA002054580A patent/CA2054580C/fr not_active Expired - Fee Related
- 1991-11-11 KR KR91019942A patent/KR960015920B1/ko not_active IP Right Cessation
- 1991-11-11 CN CN91110607A patent/CN1022142C/zh not_active Expired - Lifetime
- 1991-11-11 MY MYPI91002080A patent/MY107672A/en unknown
- 1991-11-28 JP JP3337905A patent/JPH0821166B2/ja not_active Expired - Lifetime
- 1991-12-09 SG SG1996000086A patent/SG42305A1/en unknown
- 1991-12-09 DE DE69132027T patent/DE69132027T2/de not_active Expired - Lifetime
- 1991-12-09 EP EP91311417A patent/EP0490608B1/fr not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0346817A2 (fr) * | 1988-06-16 | 1989-12-20 | Forschungszentrum Jülich Gmbh | Détecteur de champ magnétique avec une couche mince ferromagnétique |
Non-Patent Citations (1)
Title |
---|
J. Appl. Phys. 67 (9), 1 May 1990, pages 5680-5682 * |
Also Published As
Publication number | Publication date |
---|---|
MY107672A (en) | 1996-05-30 |
EP0490608A3 (en) | 1993-05-26 |
CN1022142C (zh) | 1993-09-15 |
KR960015920B1 (en) | 1996-11-23 |
DE69132027D1 (de) | 2000-04-13 |
SG42305A1 (en) | 1997-08-15 |
CA2054580A1 (fr) | 1992-06-12 |
CN1062425A (zh) | 1992-07-01 |
EP0490608A2 (fr) | 1992-06-17 |
CA2054580C (fr) | 1994-05-03 |
KR920013258A (ko) | 1992-07-28 |
JPH04358310A (ja) | 1992-12-11 |
DE69132027T2 (de) | 2000-09-14 |
US5206590A (en) | 1993-04-27 |
JPH0821166B2 (ja) | 1996-03-04 |
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