KR950704820A - 자기 저항 장치 및, 이 장치를 이용한 자기헤드(Magneto-resistance device, and magnetic head employing such a device) - Google Patents
자기 저항 장치 및, 이 장치를 이용한 자기헤드(Magneto-resistance device, and magnetic head employing such a device)Info
- Publication number
- KR950704820A KR950704820A KR1019950702273A KR19950702273A KR950704820A KR 950704820 A KR950704820 A KR 950704820A KR 1019950702273 A KR1019950702273 A KR 1019950702273A KR 19950702273 A KR19950702273 A KR 19950702273A KR 950704820 A KR950704820 A KR 950704820A
- Authority
- KR
- South Korea
- Prior art keywords
- magnetoresistive device
- ferromagnetic
- magnetic head
- semimetallic
- magneto
- Prior art date
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 3
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract 9
- 239000000463 material Substances 0.000 claims abstract 4
- 239000002885 antiferromagnetic material Substances 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000000615 nonconductor Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000005290 antiferromagnetic effect Effects 0.000 abstract 1
- 230000002452 interceptive effect Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3213—Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Abstract
자기 저항 장치는 적어도 하나의 삽입된 반강자성체 층에 의해 상호 분리된 2개의 강자성체층을 포함하고 있는데, 적어도 하나의 강자성체층은 반금속성체를 포함하고 있으며, 또한 두 강자성층은 반금속성체를 원래 포함하는 것이 좋다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 및 제2도는 본 발명에 따라 실시된 자기 저항 일부 단면도이다. 제3도 및 제4도는 본 발명에 따른 자기 저항 장치의 다른 실시예의 일부 단면도이다. 제5도는 본 발명에 따른 자기 저항 장치를 이용하는 자기 헤드의 일부 투시도이다.
Claims (7)
- 적어도 하나의 삽입된 층인 반강자성(non-ferromagnetic)체에 의해 상호 분리된 2개의 강자성체층을 포함하는 자기 저항 장치에 있어서, 적어도 하나의 강자성체층의 반금속성(half-metallic)체를 포함하는 것을 특징으로 하는 자기 저항 장치.
- 제1항에 있어서, 두 강자성층이 반금속성체를 원래 포함하고 있는 것을 특징으로 하는 자기 저항 장치.
- 제1항 또는 제2항에 있어서, 상기 반금속성체는 금속 산화물인 것을 특징으로 하는 자기 저항 장치.
- 제3항에 있어서, 상기 반금속성체는 Fe3O4, CrO2에 의해 형성된 그룹으로부터 선택되며 또한 이의 혼합물인 것을 특징으로 하는 자기 저항 장치.
- 제1항 내지 제4항중 어느 한 항에 있어서, 상기 반강자성체가 전기 절연체인 것을 특징으로 하는 자기 저항 장치.
- 제1항 내지 제5항중 어느 한 항에 의해 청구된 자기 저항 장치를 포함하는 것을 특징으로 하는 자기 헤드.
- 적어도 하나의 삽입된 층인 반강자성체에 의해 상호 분리된 적어도 2개의 강자성체층을 포함하는 물질혼합물에 있어서, 적어도 하나의 강자성체층이 반금속성체를 포함하는 것을 특징으로 하는 물질 혼합물.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP93202835.0 | 1993-10-06 | ||
EP93202835 | 1993-10-06 | ||
PCT/IB1994/000275 WO1995010123A1 (en) | 1993-10-06 | 1994-09-13 | Magneto-resistance device, and magnetic head employing such a device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950704820A true KR950704820A (ko) | 1995-11-20 |
Family
ID=8214124
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950702273A KR950704820A (ko) | 1993-10-06 | 1994-09-13 | 자기 저항 장치 및, 이 장치를 이용한 자기헤드(Magneto-resistance device, and magnetic head employing such a device) |
Country Status (7)
Country | Link |
---|---|
US (1) | US6205008B1 (ko) |
EP (1) | EP0672303B1 (ko) |
JP (1) | JPH08504303A (ko) |
KR (1) | KR950704820A (ko) |
DE (1) | DE69407158T2 (ko) |
SG (1) | SG55066A1 (ko) |
WO (1) | WO1995010123A1 (ko) |
Families Citing this family (69)
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US7050329B2 (en) * | 1995-04-21 | 2006-05-23 | Johnson Mark B | Magnetic spin based memory with inductive write lines |
US5767673A (en) * | 1995-09-14 | 1998-06-16 | Lucent Technologies Inc. | Article comprising a manganite magnetoresistive element and magnetically soft material |
DE19701509C2 (de) * | 1996-01-19 | 2003-08-21 | Fujitsu Ltd | Magnetsensoren |
US5764567A (en) * | 1996-11-27 | 1998-06-09 | International Business Machines Corporation | Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response |
US5650958A (en) * | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
US5640343A (en) * | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
US5835314A (en) * | 1996-04-17 | 1998-11-10 | Massachusetts Institute Of Technology | Tunnel junction device for storage and switching of signals |
EP0843827A2 (en) * | 1996-06-12 | 1998-05-27 | Koninklijke Philips Electronics N.V. | A magneto-resistive magnetic field sensor |
US5801984A (en) * | 1996-11-27 | 1998-09-01 | International Business Machines Corporation | Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment |
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JP5039007B2 (ja) * | 2008-09-26 | 2012-10-03 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
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US8575674B2 (en) * | 2009-04-16 | 2013-11-05 | National Institute For Materials Science | Ferromagnetic tunnel junction structure, and magneto-resistive element and spintronics device each using same |
US8498083B2 (en) | 2011-03-16 | 2013-07-30 | Tdk Corporation | Magneto-resistive effect element having spacer layer containing gallium oxide, partially oxidized copper |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60251682A (ja) * | 1984-05-29 | 1985-12-12 | Hitachi Ltd | 磁気抵抗効果型素子 |
US4754354A (en) * | 1986-05-05 | 1988-06-28 | Eastman Kodak Company | Ferrite film insulating layer in a yoke-type magneto-resistive head |
DE3820475C1 (ko) * | 1988-06-16 | 1989-12-21 | Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De | |
FR2648942B1 (fr) * | 1989-06-27 | 1995-08-11 | Thomson Csf | Capteur a effet magnetoresistif |
US5206590A (en) * | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
JP2690623B2 (ja) * | 1991-02-04 | 1997-12-10 | 松下電器産業株式会社 | 磁気抵抗効果素子 |
US5159513A (en) * | 1991-02-08 | 1992-10-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
US5304975A (en) * | 1991-10-23 | 1994-04-19 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element and magnetoresistance effect sensor |
JP3253696B2 (ja) * | 1992-09-11 | 2002-02-04 | 株式会社東芝 | 磁気抵抗効果素子 |
US5287238A (en) * | 1992-11-06 | 1994-02-15 | International Business Machines Corporation | Dual spin valve magnetoresistive sensor |
-
1994
- 1994-09-13 DE DE69407158T patent/DE69407158T2/de not_active Expired - Fee Related
- 1994-09-13 KR KR1019950702273A patent/KR950704820A/ko active IP Right Grant
- 1994-09-13 JP JP7510707A patent/JPH08504303A/ja not_active Ceased
- 1994-09-13 SG SG1996004536A patent/SG55066A1/en unknown
- 1994-09-13 WO PCT/IB1994/000275 patent/WO1995010123A1/en active IP Right Grant
- 1994-09-13 EP EP94924979A patent/EP0672303B1/en not_active Expired - Lifetime
-
1996
- 1996-05-16 US US08/649,909 patent/US6205008B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0672303A1 (en) | 1995-09-20 |
SG55066A1 (en) | 1999-06-22 |
EP0672303B1 (en) | 1997-12-03 |
US6205008B1 (en) | 2001-03-20 |
DE69407158T2 (de) | 1998-05-28 |
JPH08504303A (ja) | 1996-05-07 |
DE69407158D1 (de) | 1998-01-15 |
WO1995010123A1 (en) | 1995-04-13 |
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