KR930005276A - 다층식 박막 구조체를 가진 자기저항 센서 - Google Patents

다층식 박막 구조체를 가진 자기저항 센서 Download PDF

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KR930005276A
KR930005276A KR1019920014823A KR920014823A KR930005276A KR 930005276 A KR930005276 A KR 930005276A KR 1019920014823 A KR1019920014823 A KR 1019920014823A KR 920014823 A KR920014823 A KR 920014823A KR 930005276 A KR930005276 A KR 930005276A
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thin film
sensor
magnetoresistive sensor
layer
ferromagnetic material
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KR1019920014823A
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KR960003994B1 (ko
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디에니 베르나르드
앨빈 거니 브루스
스테판 팹워쓰 파킨 스튜어트
루이스 샌더즈 이안
사이먼 스퍼리오스 버질
리챠드 윌호트 대니스
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원본미기재
인터내셔널 비지네스 머신즈 코포레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)

Abstract

내용 없음.

Description

다층식 박막 구조체를 가진 자기저항 센서
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명에 따른 자기저항 센서의 특정 실시예의 약선도,
제2도는 본 발명에 따른 자기저항 센서의 다른 실시예의 단면도(end view),
제3도는 본 발명에 따른 전기저항 센서의 또다른 실시예의 약선도.

Claims (16)

  1. 비강자성(nonferromagnetic)금속 물질의 제2박막과 경계접촉되는 (in interfacial contacr with)강자성 물질의 제1박막을 각각 포함하는 적어도 2개의 이중층(bilayer)을 갖는 층식 구조물과(a layered structure), 상기 강자성 물질의 제1박막내에 있고, 단일층의 몇분의 1과 여러개의 단일층과의 사이의 두께(a thickness of between a fraction of a monolayer and several monolayers)를 가지며, 상기 제1 및 제2박막층 사이의 경계(interface)로 부터 예정된 거리(X)에 위치된 물질의 제3박막과(a third thin film of material), 자기저항 센서를 통해 전류를 발생시키는 수단과(means for producing a current flow through said magneto resistive sensor), 감지되는 자장의 함수로서(as a function of the Magnetic field being sensed)의 상기 제1층내의 자화의 회전에 기인한(due to rotation of the magnetization in said first layer)상기 자기저항 센서의 저항 변화에 의해 발생된 자기저항 센서에 걸친 전압 변화(the variations in voltage across said magnetoresistive sensor produced bychances in resistance of said magnetoresistive sensor)를 감지하는 수단을 포함하는 것을 특징으로 하는 자기 저항 센서.
  2. 제1항에 있어서, 상기 제3물질 박막은 비강자성 물질을 포함하는 것을 특징으로 하는 자기저항 센서.
  3. 제1항에 있어서, 상기 거리(X)는 0 내지 약 17.5Å인 것을 특징으로 하는 자기저항 센서.
  4. 제1항에 있어서, 상기 제1박막층은 Fe이고, 상기 제2박막층은 Cr이며, 상기 제3박막층은 Cr인 것을 특징으로 하는 자기저항 센서.
  5. 비자기(non-magnetic)금속 물질의 제3박막층에 의해 분리되고 상기 제3박막층과 경계접촉되는(in interfacial contact with)강자성 물질의 제1 및 제2박막층을 포함하는 적어도 1개의 삼중층(trilayer)을 갖는 층식 구조물과(alayeredstructure), 상기 강자성 물질의 제1박막층내에 있고, 단일층의 몇분의 1과 여러개의 단일층과의 사이의 두께(a thickness of between a fraction of a monolayer and several monolayers)를 가지며 상기 제1 및 제3박막부터 예정된 거리(X)에 위치된 물질의 제4박막층과(a third thin film of material), 자기저항 센서를 통해 전류를 발생시키는 수단과(means for producing a current. flow through said magneto resistive sensor), 감지되는 자장의 함수로서(as a function of the magnetic field being sensed)의 상기 제1층내의 자화의 회전에 기인한(due to rotation of the magnetization in said first layer)상기 자기저항 센서의 저항 변화에 의해 발생된 자기저항센서에 걸친 전압 변화(the variations in voltage across said agnetoresistive sensor produced by chines in resistance of said magnetoresistive sensor)를 감지하는 수단을 포함하는 것을 특징으로 하는 자기저항 센서.
  6. 제5항에 있어서, 상기 강자성 물질의 제2박막내에 있고, 단일층의 몇분의 1과 여러개의 단일층과의 사이의 두께(a thickness of between a fraction of a monolayer and several m7n7layers)를 가지며, 상기 제2 및 제3박막층 사이의 경계(interface)로 부터 예정된 거 리(Y)에 위치된 물질의 제5박막층(a third thin film material)을 추가로 포함하는 것을 특징으로 하는 자기저항 센서,
  7. 제5항에 있어서, 상기 제4물질 박막은 금속 물질을 포함하는 것을 특징으로 하는 자기저항 센서.
  8. 제6항에 있어서, 상기 거리 X 및 Y는 0 내지 약17.5Å인 것을 특징으로 하는 자기저항 센서.
  9. 제6항에 있어서, 상기 제5물질 박막은 금속 물질을 포함하는 것을 특징으로 하는 자기저항 센서.
  10. 제6항에 있어서, 상기 거리 X 및 Y는 0 내지 약 17.5Å인 것을 특징으로 하는 자기저항 센서.
  11. 비자기(non-magnetic)금속 물질의 제3박막층에 의해 분리되고 상기 제3박막층과 경계접촉되는(in interfacial contact with)강자성 물질의 제1및 제2박막층을 포함하는 적어도 1개의 삼중층(trilayer)을 갖는 층식 구조물과(a layered structure), 상기 제1 및 제3박막층 사이의 경계에 있는 강자성 물질의 제4박막층과, 자기저항 센서를 통해 전류를 발생시키는 수단과(means for producing a current flow through said magneto resistive sensor), 감지되는 자장의 함수로서(as a function of the magnetic field being sensed)의 상기 제1층내의 자화의 회전에 기인한(due to rotation of the magnetization in said first layer) 상기 자기저항 센서의 저항 변화에 의해 발생된 자기저항 센서에 걸친 전압 변화(the variations in voltage across said magnetoresistive sensor produced by chines in resistance of said magnetoresistive sensor)를 감지하는 수단을 포함하는 것을 특징으로 하는 자기저항 센서.
  12. 제11항에 있어서, 상기 제4강자성 물질 박막층은 0.5 내지 20Å의 범위내의 두께를 갖는 것을 특징으로 하는 자기저항 센서.
  13. 제11항에 있어서, 상기 제2 및 제3박막층 사이의 경계에 있는 제5강자성 물질 박막층을 추가로 포함하는 것을 특징으로 하는 자기저항 센서.
  14. 제13항에 있어서, 상기 제5강자성 물질 박막층은 0.5 내지 50Å의 범위내의 두께를 갖는 것을 특징으로 하는 자기저항 센서.
  15. 제11항에 있어서 상기 제4강자성 물질 박막층은 강자성 합금을 포함하는 것을 특징으로 하는 자기저항 센서.
  16. 제13항에 있어서, 상기 제5강자성 물질 박막층은 강자성 합금을 포함하는 것을 특징으로 하는 자기저항 센서.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920014823A 1991-08-26 1992-08-18 다층식 박막 구조체를 가진 자기저항 센서 KR960003994B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US750,157 1991-08-26
US07/750,157 US5341261A (en) 1991-08-26 1991-08-26 Magnetoresistive sensor having multilayer thin film structure

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KR930005276A true KR930005276A (ko) 1993-03-23
KR960003994B1 KR960003994B1 (ko) 1996-03-25

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US (2) US5341261A (ko)
EP (1) EP0529959A3 (ko)
JP (1) JP2654316B2 (ko)
KR (1) KR960003994B1 (ko)
SG (1) SG44397A1 (ko)
TW (1) TW201357B (ko)

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KR101233662B1 (ko) * 2011-07-19 2013-02-15 충남대학교산학협력단 유연 박막 자기저항 센서 및 그 제조 방법

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KR960003994B1 (ko) 1996-03-25
EP0529959A2 (en) 1993-03-03
US5341261A (en) 1994-08-23
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TW201357B (ko) 1993-03-01
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