KR970029372A - 대규모 자기저항 재료 및 그 형성방법 - Google Patents

대규모 자기저항 재료 및 그 형성방법 Download PDF

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KR970029372A
KR970029372A KR1019960052210A KR19960052210A KR970029372A KR 970029372 A KR970029372 A KR 970029372A KR 1019960052210 A KR1019960052210 A KR 1019960052210A KR 19960052210 A KR19960052210 A KR 19960052210A KR 970029372 A KR970029372 A KR 970029372A
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magnetic
layer
memory cell
layers
ferromagnetically coupled
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첸 유진
엔. 데라니 사이드
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빈센트 비. 인그라시아
모토로라 인코포레이티드
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
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    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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Abstract

다층 자기 재료(10)는 재료(10)의 길이를 따라 가리키는 자기 벡터(21,22)를 갖는다. 반대 자계는 상기 벡터가 재료의 저항에서 빠른 변화로 이전의 수직 위치로 스냅되게 한다. 상기 재료는 메모리(36)의 메모리 셀(37,38,39,41)로서 사용된다.

Description

대규모 자기저항 재료 및 그 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 GMR 재료의 확대 단면도,
제2도는 본 발명에 따라 제1도에 도시된 GMR 재료의 노출부분 확대도,
제5도는 본 발명에 따른 제1도에 도시된 GMR을 활용하는 메모리 일부를 확대한 평면도.

Claims (6)

  1. GMR 재료(10)를 형성하는 방법에 있어서, 복수의 자기 재료층(11,13,6,18)내에 있는 자기 영역 벽의 폭보다 작은 폭을 각각 가지도록 상기 복수의 자기 재료층(11,13,16,18)을 형성하는 단계를 포함하며, 각각의 자기 재료층은 인접하는 자기 재료층과 강자성적으로 결합되며, 각각의 자기 재료층의 자기 벡터는 실질적으로 GMR 재료의 길이를 따르는 것을 특징으로 하는 GMR 재료 형성방법.
  2. 강자성적으로 결합된 GMR 재료(10)에 있어서, 폭과 길이를 갖는 복수의 자기층(11,13,16,18)로서, 상기 폭은 천이 폭보다 크지 않으며 각각의 자기층이 인접하는 자기층과 강자성적으로 결합되며 복수의 자기층의 각 층의 모든 자기 벡터가 실질적으로 길이를 따라 정합하는 상기 복수의 자기층; 및 상기 복수의 자기층(11,13,16,18)을 분리하는 복수의 전도 스페이서(12,14,17)를 포함하는 것을 특징으로 하는 강자성적으로 결합된 GMR 재료.
  3. 강자성적으로 다층 결합된 GMR 재료(10)에 있어서, 제1폭, 제1두께, 및 제1길이를 갖는 제1합성 자기층(11); 제1전도 스페이서층(12); 및 제2폭, 상기 제1두께보다 더 두꺼운 제2두께, 및 제2길이를 갖는 제2합성 자기층(13)을 포합하며, 상기 제1전도 스페이서층(12)은 제1 및 제2자기층(11,13)사이에 있으며 제1 및 제2폭은 제1천이 폭보다 크지 않으며 제1 및 제2자기층(11,13)은 강자성적으로 결합되어 있으며 제1 및 제2합성 자기층(11,13)의 자기 벡터는 실질적으로 제1 및 제2길이에 평행한 것을 특징으로 하는 강자성적으로 다층 결합된 GMR 재료.
  4. 강자성적으로 결합된 자기 메모리(36)에 있어서, 강자성적으로 결합된 GMR 재료층(10); 강자성적으로 다층 결합된 재료층위에 겹쳐있는 절연체(43); 및 상기 절연체(43)위에 겹쳐있는 제1전도층(44);을 포함하며,상기 제1전도층[44)은 강자성적으로 다층 결합된 GMR 재료(10)층에 실질적으로 수직인 것을 특징으로 하는강자성적으로 결합된 자기 메모리.
  5. 강자성적으로 결합된 자기 메모리(36)를 사용하는 방법에 있어서, 제1전체 자계(49)를 제1방향에서 메모리 셀(10)의 상태를 바꾸는데 충분하지 못한 제1크기로 메모리 셀(10)에 인가하도록 포지티브 감지 전류와 제1워드 전류를 사용하는 단계; 상기 메모리 셀(10)의 제1출력 전압을 결정하는 단계; 제2전체 자계를 제2방향으로 상기 메모리 셀의 상태를 바꾸는데 충분하지 못한 제2크기로 메모리 셀(10)에 인가함으로써 상기 제1전류를 제2전류로 바꾸는 단계; 메모리 셀(10)의 제2전압 출력을 결정하는 단계; 및 상기 제1전압 출력을 상기 제2전압 출력과 비교하는 단계;를 포함하는 것을 특징으로 하는 강자성적으로 결합된 자기 메모리 사용 방법.
  6. 강자성적으로 결합된 자기 메모리(36)를 사용하는 방법에 있어서, 제1전체 자계(49)를 제l방향으로 메모리 셀의 상태를 바꾸는데 충분하지 못한 제1크기로 상기 메모리 셀(10)에 인가하도록 제1워드 전류를 사용하는 단계; 및 상기 메모리 셀(10)의 제1전압 출력을 결정하는 단계;를 포함하는 것을 특징으로 하는 강자성적으로 결합된 자기 메모리 사용 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960052210A 1995-11-06 1996-11-06 강자성gmr재료및그형성방법 KR100397246B1 (ko)

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US553,933 1983-11-21
US08/553,933 US5702831A (en) 1995-11-06 1995-11-06 Ferromagnetic GMR material

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KR970029372A true KR970029372A (ko) 1997-06-26
KR100397246B1 KR100397246B1 (ko) 2003-11-20

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US5702831A (en) * 1995-11-06 1997-12-30 Motorola Ferromagnetic GMR material
US5966322A (en) * 1996-09-06 1999-10-12 Nonvolatile Electronics, Incorporated Giant magnetoresistive effect memory cell
US6555858B1 (en) 2000-11-15 2003-04-29 Motorola, Inc. Self-aligned magnetic clad write line and its method of formation
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US6418046B1 (en) * 2001-01-30 2002-07-09 Motorola, Inc. MRAM architecture and system
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EP0772250B1 (en) 2003-07-30
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US6177204B1 (en) 2001-01-23

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