AU2002230791A1 - Unipolar spin diode and transistor and the applications of the same - Google Patents
Unipolar spin diode and transistor and the applications of the sameInfo
- Publication number
- AU2002230791A1 AU2002230791A1 AU2002230791A AU3079102A AU2002230791A1 AU 2002230791 A1 AU2002230791 A1 AU 2002230791A1 AU 2002230791 A AU2002230791 A AU 2002230791A AU 3079102 A AU3079102 A AU 3079102A AU 2002230791 A1 AU2002230791 A1 AU 2002230791A1
- Authority
- AU
- Australia
- Prior art keywords
- transistor
- applications
- same
- spin diode
- unipolar spin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3213—Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66984—Devices using spin polarized carriers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24349300P | 2000-10-26 | 2000-10-26 | |
US60/243,493 | 2000-10-26 | ||
PCT/US2001/048041 WO2002035611A2 (en) | 2000-10-26 | 2001-10-26 | Unipolar spin diode and transistor and the applications of the same |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002230791A1 true AU2002230791A1 (en) | 2002-05-06 |
Family
ID=22918964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002230791A Abandoned AU2002230791A1 (en) | 2000-10-26 | 2001-10-26 | Unipolar spin diode and transistor and the applications of the same |
Country Status (3)
Country | Link |
---|---|
US (3) | US6624490B2 (en) |
AU (1) | AU2002230791A1 (en) |
WO (1) | WO2002035611A2 (en) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0006142D0 (en) * | 2000-03-14 | 2000-05-03 | Isis Innovation | Spin transistor |
DE10114963A1 (en) * | 2001-03-20 | 2002-10-02 | Infineon Technologies Ag | Semiconductor element with a semi-magnetic contact |
JP4477305B2 (en) * | 2002-07-25 | 2010-06-09 | 独立行政法人科学技術振興機構 | Spin transistor and nonvolatile memory using the same |
KR100533648B1 (en) * | 2003-03-14 | 2005-12-06 | 한국과학기술연구원 | GROWING METHOD FOR Bi THIN FILM AND Bi BASED DEVICE |
US7719071B1 (en) * | 2003-05-27 | 2010-05-18 | University Of Iowa Research Foundation | Bipolar spin transistors and the applications of the same |
US6888208B2 (en) * | 2003-07-30 | 2005-05-03 | Hewlett-Packard Development Company, L.P. | Square-law detector based on spin injection and nanowires |
US7164181B2 (en) * | 2003-07-30 | 2007-01-16 | Hewlett-Packard Development Company, L.P. | Spin injection devices |
JPWO2005069368A1 (en) * | 2004-01-15 | 2007-12-27 | 独立行政法人科学技術振興機構 | Current injection domain wall motion element |
US7492022B2 (en) * | 2004-02-27 | 2009-02-17 | University Of Iowa Research Foundation | Non-magnetic semiconductor spin transistor |
US20090009914A1 (en) * | 2004-05-07 | 2009-01-08 | Etech Ag | Semiconductor Device Using Locating and Sign of the Spin of Electrons |
US20060049473A1 (en) * | 2004-08-18 | 2006-03-09 | Heremans Jean J | Spin polarization of charge carriers |
US7196367B2 (en) * | 2004-09-30 | 2007-03-27 | Intel Corporation | Spin polarization amplifying transistor |
US7636223B2 (en) * | 2005-01-10 | 2009-12-22 | Hitachi Global Storage Technologies Netherlands B.V. | Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure and a self-pinned layer structure |
EP1830410A1 (en) * | 2006-02-24 | 2007-09-05 | Hitachi, Ltd. | Single-charge tunnelling device |
US7977668B2 (en) * | 2007-05-23 | 2011-07-12 | Northwestern University | Multilayer structure with zirconium-oxide tunnel barriers and applications of same |
WO2009102577A1 (en) * | 2008-02-13 | 2009-08-20 | University Of Delaware | Electromagnetic wave detection methods and apparatus |
US8941379B2 (en) * | 2009-05-14 | 2015-01-27 | University Of Delaware | Electromagnetic wave detection systems and methods |
US8334550B1 (en) | 2011-06-09 | 2012-12-18 | Northrop Grumman Systems Corporation | Unipolar diode with low turn-on voltage |
KR20130017267A (en) * | 2011-08-10 | 2013-02-20 | 에스케이하이닉스 주식회사 | Semiconductor and method for fabricating the same |
US9276197B2 (en) * | 2013-11-21 | 2016-03-01 | The United States Of America As Represented By The Secretary Of The Navy | Hybrid domain wall-hall cross device |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3818328A (en) * | 1969-09-30 | 1974-06-18 | Siemens Ag | Ferromagnetic heterojunction diode |
US5206590A (en) | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
US5432373A (en) | 1992-12-15 | 1995-07-11 | Bell Communications Research, Inc. | Magnetic spin transistor |
US5541868A (en) | 1995-02-21 | 1996-07-30 | The United States Of America As Represented By The Secretary Of The Navy | Annular GMR-based memory element |
US5654566A (en) | 1995-04-21 | 1997-08-05 | Johnson; Mark B. | Magnetic spin injected field effect transistor and method of operation |
US6064083A (en) | 1995-04-21 | 2000-05-16 | Johnson; Mark B. | Hybrid hall effect memory device and method of operation |
US5629549A (en) | 1995-04-21 | 1997-05-13 | Johnson; Mark B. | Magnetic spin transistor device, logic gate & method of operation |
US5652445A (en) * | 1995-04-21 | 1997-07-29 | Johnson; Mark B. | Hybrid hall effect device and method of operation |
US5872368A (en) | 1995-11-30 | 1999-02-16 | The United States Of America As Represented By The Secretary Of The Navy | Method of controlling a super conductor |
US5721654A (en) | 1995-11-30 | 1998-02-24 | Nec Corporation | Magnetometric sensor magnetically isolated two regions formed of spin-polarized material and magnetic head using the same |
US5640343A (en) | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
GB9608716D0 (en) * | 1996-04-26 | 1996-07-03 | Isis Innovation | Spin transistor |
US5929636A (en) | 1996-05-02 | 1999-07-27 | Integrated Magnetoelectronics | All-metal giant magnetoresistive solid-state component |
US5962905A (en) * | 1996-09-17 | 1999-10-05 | Kabushiki Kaisha Toshiba | Magnetoresistive element |
US6114719A (en) | 1998-05-29 | 2000-09-05 | International Business Machines Corporation | Magnetic tunnel junction memory cell with in-stack biasing of the free ferromagnetic layer and memory array using the cell |
US6297987B1 (en) | 1999-09-30 | 2001-10-02 | The United States Of America As Represented By The Secretary Of The Navy | Magnetoresistive spin-injection diode |
-
2001
- 2001-10-26 WO PCT/US2001/048041 patent/WO2002035611A2/en active Application Filing
- 2001-10-26 AU AU2002230791A patent/AU2002230791A1/en not_active Abandoned
- 2001-10-26 US US10/014,925 patent/US6624490B2/en not_active Expired - Fee Related
-
2003
- 2003-06-04 US US10/455,766 patent/US6696737B2/en not_active Expired - Fee Related
-
2004
- 2004-01-30 US US10/768,630 patent/US6919213B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6919213B2 (en) | 2005-07-19 |
US20040183151A1 (en) | 2004-09-23 |
US20020096698A1 (en) | 2002-07-25 |
US6696737B2 (en) | 2004-02-24 |
WO2002035611A2 (en) | 2002-05-02 |
WO2002035611A3 (en) | 2003-03-06 |
US20030209770A1 (en) | 2003-11-13 |
US6624490B2 (en) | 2003-09-23 |
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