AU2001282579A1 - Compound semiconductor multilayer structure and bipolar transistor using the same - Google Patents

Compound semiconductor multilayer structure and bipolar transistor using the same

Info

Publication number
AU2001282579A1
AU2001282579A1 AU2001282579A AU8257901A AU2001282579A1 AU 2001282579 A1 AU2001282579 A1 AU 2001282579A1 AU 2001282579 A AU2001282579 A AU 2001282579A AU 8257901 A AU8257901 A AU 8257901A AU 2001282579 A1 AU2001282579 A1 AU 2001282579A1
Authority
AU
Australia
Prior art keywords
same
compound semiconductor
bipolar transistor
multilayer structure
semiconductor multilayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001282579A
Inventor
Taichi Okano
Takashi Udagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000272840A external-priority patent/JP2002083816A/en
Priority claimed from JP2000362534A external-priority patent/JP2002164533A/en
Application filed by Showa Denko KK filed Critical Showa Denko KK
Publication of AU2001282579A1 publication Critical patent/AU2001282579A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
AU2001282579A 2000-09-08 2001-08-31 Compound semiconductor multilayer structure and bipolar transistor using the same Abandoned AU2001282579A1 (en)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2000272840A JP2002083816A (en) 2000-09-08 2000-09-08 Compound semiconductor hetero junction structure
JP2000-272840 2000-09-08
US23773000P 2000-10-05 2000-10-05
US60237730 2000-10-05
JP2000362534A JP2002164533A (en) 2000-11-29 2000-11-29 Compound semiconductor laminated structure and bipolar transistor using the same
JP2000-362534 2000-11-29
US25489700P 2000-12-13 2000-12-13
US60254897 2000-12-13
PCT/JP2001/007536 WO2002021599A2 (en) 2000-09-08 2001-08-31 Compound semiconductor multilayer structure and bipolar transistor using the same

Publications (1)

Publication Number Publication Date
AU2001282579A1 true AU2001282579A1 (en) 2002-03-22

Family

ID=27481599

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001282579A Abandoned AU2001282579A1 (en) 2000-09-08 2001-08-31 Compound semiconductor multilayer structure and bipolar transistor using the same

Country Status (4)

Country Link
US (1) US6876013B2 (en)
AU (1) AU2001282579A1 (en)
DE (1) DE10196596B4 (en)
WO (1) WO2002021599A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6955858B2 (en) * 2001-12-07 2005-10-18 North Carolina State University Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same
TWI281833B (en) 2004-10-28 2007-05-21 Kyocera Corp Heater, wafer heating apparatus and method for manufacturing heater
JP2007335508A (en) * 2006-06-13 2007-12-27 Nec Electronics Corp Field effect transistor and its manufacturing method
US11393683B2 (en) 2009-10-14 2022-07-19 Utica Leaseco, Llc Methods for high growth rate deposition for forming different cells on a wafer
US20190272994A1 (en) * 2009-10-14 2019-09-05 Alta Devices, Inc. High growth rate deposition for group iii/v materials
EP2628183A4 (en) * 2010-10-12 2014-04-02 Alliance Sustainable Energy High bandgap iii-v alloys for high efficiency optoelectronics
JP6303998B2 (en) * 2014-11-28 2018-04-04 三菱電機株式会社 Manufacturing method of avalanche photodiode
JP6852703B2 (en) * 2018-03-16 2021-03-31 信越半導体株式会社 Carbon concentration evaluation method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08162471A (en) * 1994-12-01 1996-06-21 Furukawa Electric Co Ltd:The Heterojunction bipolar transistor
JP3537246B2 (en) * 1995-11-14 2004-06-14 三菱電機株式会社 Method for manufacturing compound semiconductor device
JP3227083B2 (en) 1996-01-24 2001-11-12 日本電信電話株式会社 Method for manufacturing bipolar transistor

Also Published As

Publication number Publication date
WO2002021599A3 (en) 2002-06-20
US6876013B2 (en) 2005-04-05
DE10196596B4 (en) 2009-03-05
DE10196596T1 (en) 2003-07-10
WO2002021599A2 (en) 2002-03-14
US20030183816A1 (en) 2003-10-02

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