AU2002219895A1 - Bipolar transistor with lattice matched base layer - Google Patents

Bipolar transistor with lattice matched base layer

Info

Publication number
AU2002219895A1
AU2002219895A1 AU2002219895A AU1989502A AU2002219895A1 AU 2002219895 A1 AU2002219895 A1 AU 2002219895A1 AU 2002219895 A AU2002219895 A AU 2002219895A AU 1989502 A AU1989502 A AU 1989502A AU 2002219895 A1 AU2002219895 A1 AU 2002219895A1
Authority
AU
Australia
Prior art keywords
base layer
bipolar transistor
lattice matched
matched base
lattice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002219895A
Inventor
Paul M. Deluca
Noren Pan
Roger E. Welser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kopin Corp
Original Assignee
Kopin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kopin Corp filed Critical Kopin Corp
Publication of AU2002219895A1 publication Critical patent/AU2002219895A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
AU2002219895A 2000-11-27 2001-11-27 Bipolar transistor with lattice matched base layer Abandoned AU2002219895A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25315900P 2000-11-27 2000-11-27
US60/253,159 2000-11-27
PCT/US2001/044471 WO2002043155A2 (en) 2000-11-27 2001-11-27 Bipolar transistor with lattice matched base layer

Publications (1)

Publication Number Publication Date
AU2002219895A1 true AU2002219895A1 (en) 2002-06-03

Family

ID=22959119

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002219895A Abandoned AU2002219895A1 (en) 2000-11-27 2001-11-27 Bipolar transistor with lattice matched base layer

Country Status (4)

Country Link
US (2) US6750480B2 (en)
JP (1) JP2004521485A (en)
AU (1) AU2002219895A1 (en)
WO (1) WO2002043155A2 (en)

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US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
KR101429098B1 (en) 2004-06-04 2014-09-22 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 Methods and devices for fabricating and assembling printable semiconductor elements
US7521292B2 (en) 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US7807921B2 (en) * 2004-06-15 2010-10-05 The Boeing Company Multijunction solar cell having a lattice mismatched GrIII-GrV-X layer and a composition-graded buffer layer
US7566948B2 (en) 2004-10-20 2009-07-28 Kopin Corporation Bipolar transistor with enhanced base transport
CN103956336B (en) 2006-09-20 2019-08-16 伊利诺伊大学评议会 For manufacturing transferable semiconductor structures, device and the release strategies of device components
KR101636750B1 (en) 2007-01-17 2016-07-06 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 Optical systems fabricated by printing-based assembly
TWI559532B (en) * 2007-04-30 2016-11-21 烏翠泰克股份有限公司 Silicon germanium heterojunction bipolar transistor structure and method
US7900167B2 (en) * 2007-10-24 2011-03-01 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor structure and method
US7750371B2 (en) * 2007-04-30 2010-07-06 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor structure and method
CN103872002B (en) 2008-03-05 2017-03-01 伊利诺伊大学评议会 Stretchable and foldable electronic device
US8470701B2 (en) * 2008-04-03 2013-06-25 Advanced Diamond Technologies, Inc. Printable, flexible and stretchable diamond for thermal management
EP2349440B1 (en) * 2008-10-07 2019-08-21 Mc10, Inc. Catheter balloon having stretchable integrated circuitry and sensor array
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
US8372726B2 (en) * 2008-10-07 2013-02-12 Mc10, Inc. Methods and applications of non-planar imaging arrays
US8097926B2 (en) * 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US8886334B2 (en) * 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US8865489B2 (en) * 2009-05-12 2014-10-21 The Board Of Trustees Of The University Of Illinois Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays
KR101649004B1 (en) * 2009-05-26 2016-08-17 스미또모 가가꾸 가부시키가이샤 Semiconductor substrate, process for producing semiconductor substrate, and electronic device
US20110218756A1 (en) * 2009-10-01 2011-09-08 Mc10, Inc. Methods and apparatus for conformal sensing of force and/or acceleration at a person's head
WO2011041727A1 (en) 2009-10-01 2011-04-07 Mc10, Inc. Protective cases with integrated electronics
WO2011084450A1 (en) 2009-12-16 2011-07-14 The Board Of Trustees Of The University Of Illinois Electrophysiology in-vivo using conformal electronics
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
WO2011115643A1 (en) * 2010-03-17 2011-09-22 The Board Of Trustees Of The University Of Illinois Implantable biomedical devices on bioresorbable substrates
WO2012097163A1 (en) 2011-01-14 2012-07-19 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
US9765934B2 (en) 2011-05-16 2017-09-19 The Board Of Trustees Of The University Of Illinois Thermally managed LED arrays assembled by printing
US9159635B2 (en) 2011-05-27 2015-10-13 Mc10, Inc. Flexible electronic structure
WO2012167096A2 (en) 2011-06-03 2012-12-06 The Board Of Trustees Of The University Of Illinois Conformable actively multiplexed high-density surface electrode array for brain interfacing
JP5820402B2 (en) * 2011-06-30 2015-11-24 株式会社Ｊｏｌｅｄ THIN FILM TRANSISTOR DEVICE AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR DEVICE
FR2981195A1 (en) 2011-10-11 2013-04-12 Soitec Silicon On Insulator MULTI-JUNCTION IN A SEMICONDUCTOR DEVICE FORMED BY DIFFERENT DEPOSITION TECHNIQUES
WO2013058640A2 (en) 2011-10-20 2013-04-25 Zepeda Lopez Hector Manuel Method for the extraction, verification and counting of dialyzed leukocyte extract originating from shark spleen in order to obtain potentialized transfer factor, specifically designed for use as treatment against the disease known as asthma
CN108389893A (en) 2011-12-01 2018-08-10 伊利诺伊大学评议会 It is designed to undergo the transient state device of programmable transformation
JP2015521303A (en) 2012-03-30 2015-07-27 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシ An electronic device that can be attached to the surface and can be attached to an accessory
CN104410373B (en) 2012-06-14 2016-03-09 西凯渥资讯处理科技公司 Comprise the power amplifier module of related system, device and method
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
JP6233724B2 (en) 2013-03-19 2017-11-22 株式会社村田製作所 Heterojunction bipolar transistor
BR112017025609A2 (en) 2015-06-01 2018-08-07 The Board Of Trustees Of The University Of Illinois miniaturized wireless electronic systems with near field communication capabilities
CN107923988A (en) 2015-06-01 2018-04-17 伊利诺伊大学评议会 The alternative of UV sensings
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
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US6847060B2 (en) * 2000-11-27 2005-01-25 Kopin Corporation Bipolar transistor with graded base layer

Also Published As

Publication number Publication date
JP2004521485A (en) 2004-07-15
US20020121674A1 (en) 2002-09-05
US7186624B2 (en) 2007-03-06
WO2002043155A2 (en) 2002-05-30
US20050064672A1 (en) 2005-03-24
WO2002043155A3 (en) 2002-08-29
WO2002043155A9 (en) 2003-08-14
US6750480B2 (en) 2004-06-15

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