AU2003223423A1 - Bipolar transistor with graded base layer - Google Patents

Bipolar transistor with graded base layer

Info

Publication number
AU2003223423A1
AU2003223423A1 AU2003223423A AU2003223423A AU2003223423A1 AU 2003223423 A1 AU2003223423 A1 AU 2003223423A1 AU 2003223423 A AU2003223423 A AU 2003223423A AU 2003223423 A AU2003223423 A AU 2003223423A AU 2003223423 A1 AU2003223423 A1 AU 2003223423A1
Authority
AU
Australia
Prior art keywords
base layer
bipolar transistor
graded base
graded
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003223423A
Inventor
Paul M. Deluca
Charles R. Lutz
Kevin S. Stevens
Roger E. Welser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kopin Corp
Original Assignee
Kopin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/121,444 external-priority patent/US6847060B2/en
Application filed by Kopin Corp filed Critical Kopin Corp
Publication of AU2003223423A1 publication Critical patent/AU2003223423A1/en
Abandoned legal-status Critical Current

Links

AU2003223423A 2002-04-05 2003-03-31 Bipolar transistor with graded base layer Abandoned AU2003223423A1 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US37075802P 2002-04-05 2002-04-05
US60/370,758 2002-04-05
US37164802P 2002-04-10 2002-04-10
US60/371,648 2002-04-10
US10/121,444 US6847060B2 (en) 2000-11-27 2002-04-10 Bipolar transistor with graded base layer
US10/121,444 2002-04-10
PCT/US2003/010143 WO2003088363A1 (en) 2002-04-05 2003-03-31 Bipolar transistor with graded base layer

Publications (1)

Publication Number Publication Date
AU2003223423A1 true AU2003223423A1 (en) 2003-10-27

Family

ID=34108673

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003223423A Abandoned AU2003223423A1 (en) 2002-04-05 2003-03-31 Bipolar transistor with graded base layer

Country Status (4)

Country Link
JP (1) JP2005522883A (en)
CN (1) CN100448024C (en)
AU (1) AU2003223423A1 (en)
TW (1) TWI288479B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103026492B (en) * 2011-06-30 2016-04-06 株式会社日本有机雷特显示器 The manufacture method of film transistor device and film transistor device
CN103137666B (en) * 2011-11-23 2015-12-09 上海华虹宏力半导体制造有限公司 A kind of longitudinal P NP bipolar transistor and manufacture method thereof
WO2014148194A1 (en) 2013-03-19 2014-09-25 株式会社村田製作所 Heterojunction bipolar transistor
CN103545398B (en) * 2013-10-16 2016-06-08 北京工业大学 The double-heterojunctiophototransistor phototransistor detector of the unidirectional carrier transport of base district gradual change
CN104900689B (en) * 2015-06-08 2019-05-17 中国科学院半导体研究所 Reduce the GaN base HBT epitaxial structure and growing method of base resistance rate
CN106653826B (en) * 2016-12-26 2019-01-08 厦门市三安集成电路有限公司 A kind of compound semiconductor heterojunction bipolar transistor
CN110649088A (en) * 2019-09-30 2020-01-03 厦门市三安集成电路有限公司 Epitaxial structure and low turn-on voltage transistor
CN114859200B (en) * 2022-04-28 2024-04-12 西安唐晶量子科技有限公司 Method for evaluating material characteristics of base layer of InGaP/GaAs HBT epitaxial wafer
CN117116763B (en) * 2023-10-25 2024-01-23 新磊半导体科技(苏州)股份有限公司 Molecular beam epitaxial growth method of carbon doped HBT device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000133654A (en) * 1998-10-23 2000-05-12 Furukawa Electric Co Ltd:The Manufacture of bipolar transistor
JP2000223497A (en) * 1999-01-28 2000-08-11 Furukawa Electric Co Ltd:The Heterojunction bipolar transistor and its manufacture
FR2795871B1 (en) * 1999-07-01 2001-09-14 Picogiga Sa HETEROJUNCTION TRANSISTOR III-V, IN PARTICULAR HEMT FIELD-EFFECT TRANSISTOR OR BIPOLAR HETEROJUNCTION TRANSISTOR
CN1111313C (en) * 1999-07-02 2003-06-11 北京工业大学 Bipolar heterojunction transistor

Also Published As

Publication number Publication date
JP2005522883A (en) 2005-07-28
CN100448024C (en) 2008-12-31
TWI288479B (en) 2007-10-11
CN1647281A (en) 2005-07-27
TW200308088A (en) 2003-12-16

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase