AU2003223423A1 - Bipolar transistor with graded base layer - Google Patents
Bipolar transistor with graded base layerInfo
- Publication number
- AU2003223423A1 AU2003223423A1 AU2003223423A AU2003223423A AU2003223423A1 AU 2003223423 A1 AU2003223423 A1 AU 2003223423A1 AU 2003223423 A AU2003223423 A AU 2003223423A AU 2003223423 A AU2003223423 A AU 2003223423A AU 2003223423 A1 AU2003223423 A1 AU 2003223423A1
- Authority
- AU
- Australia
- Prior art keywords
- base layer
- bipolar transistor
- graded base
- graded
- bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US37075802P | 2002-04-05 | 2002-04-05 | |
US60/370,758 | 2002-04-05 | ||
US37164802P | 2002-04-10 | 2002-04-10 | |
US60/371,648 | 2002-04-10 | ||
US10/121,444 US6847060B2 (en) | 2000-11-27 | 2002-04-10 | Bipolar transistor with graded base layer |
US10/121,444 | 2002-04-10 | ||
PCT/US2003/010143 WO2003088363A1 (en) | 2002-04-05 | 2003-03-31 | Bipolar transistor with graded base layer |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2003223423A1 true AU2003223423A1 (en) | 2003-10-27 |
Family
ID=34108673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003223423A Abandoned AU2003223423A1 (en) | 2002-04-05 | 2003-03-31 | Bipolar transistor with graded base layer |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2005522883A (en) |
CN (1) | CN100448024C (en) |
AU (1) | AU2003223423A1 (en) |
TW (1) | TWI288479B (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103026492B (en) * | 2011-06-30 | 2016-04-06 | 株式会社日本有机雷特显示器 | The manufacture method of film transistor device and film transistor device |
CN103137666B (en) * | 2011-11-23 | 2015-12-09 | 上海华虹宏力半导体制造有限公司 | A kind of longitudinal P NP bipolar transistor and manufacture method thereof |
WO2014148194A1 (en) | 2013-03-19 | 2014-09-25 | 株式会社村田製作所 | Heterojunction bipolar transistor |
CN103545398B (en) * | 2013-10-16 | 2016-06-08 | 北京工业大学 | The double-heterojunctiophototransistor phototransistor detector of the unidirectional carrier transport of base district gradual change |
CN104900689B (en) * | 2015-06-08 | 2019-05-17 | 中国科学院半导体研究所 | Reduce the GaN base HBT epitaxial structure and growing method of base resistance rate |
CN106653826B (en) * | 2016-12-26 | 2019-01-08 | 厦门市三安集成电路有限公司 | A kind of compound semiconductor heterojunction bipolar transistor |
CN110649088A (en) * | 2019-09-30 | 2020-01-03 | 厦门市三安集成电路有限公司 | Epitaxial structure and low turn-on voltage transistor |
CN114859200B (en) * | 2022-04-28 | 2024-04-12 | 西安唐晶量子科技有限公司 | Method for evaluating material characteristics of base layer of InGaP/GaAs HBT epitaxial wafer |
CN117116763B (en) * | 2023-10-25 | 2024-01-23 | 新磊半导体科技(苏州)股份有限公司 | Molecular beam epitaxial growth method of carbon doped HBT device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000133654A (en) * | 1998-10-23 | 2000-05-12 | Furukawa Electric Co Ltd:The | Manufacture of bipolar transistor |
JP2000223497A (en) * | 1999-01-28 | 2000-08-11 | Furukawa Electric Co Ltd:The | Heterojunction bipolar transistor and its manufacture |
FR2795871B1 (en) * | 1999-07-01 | 2001-09-14 | Picogiga Sa | HETEROJUNCTION TRANSISTOR III-V, IN PARTICULAR HEMT FIELD-EFFECT TRANSISTOR OR BIPOLAR HETEROJUNCTION TRANSISTOR |
CN1111313C (en) * | 1999-07-02 | 2003-06-11 | 北京工业大学 | Bipolar heterojunction transistor |
-
2003
- 2003-03-31 CN CNB038075970A patent/CN100448024C/en not_active Expired - Lifetime
- 2003-03-31 JP JP2003585186A patent/JP2005522883A/en active Pending
- 2003-03-31 AU AU2003223423A patent/AU2003223423A1/en not_active Abandoned
- 2003-04-01 TW TW92107363A patent/TWI288479B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2005522883A (en) | 2005-07-28 |
CN100448024C (en) | 2008-12-31 |
TWI288479B (en) | 2007-10-11 |
CN1647281A (en) | 2005-07-27 |
TW200308088A (en) | 2003-12-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |