CN1441613A - 高频组件 - Google Patents
高频组件 Download PDFInfo
- Publication number
- CN1441613A CN1441613A CN03106089A CN03106089A CN1441613A CN 1441613 A CN1441613 A CN 1441613A CN 03106089 A CN03106089 A CN 03106089A CN 03106089 A CN03106089 A CN 03106089A CN 1441613 A CN1441613 A CN 1441613A
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- Prior art keywords
- conductor
- high frequency
- recess
- frequency assembly
- filter part
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Abstract
本发明提出一种高频组件,其主要特点是:在电介体基板(2)的底面形成有装载功率放大元件用凹部(2a),在其顶面形成装载弹性表面波元件用凹部(2b),功率放大元件(4)以及弹性表面波元件(8)通过导体凸起(3a、3b)分别装载在凹部(2a、2b)。在凹部(2a)和凹部(2b)之间形成有另一端的端部在电介体基板(2)的底面露出的贯通导体(11),通过焊材(13),把该贯通导体(11)的露出部安装在外部电路基板(7)上面的散热用导体(15)上。
Description
技术领域
本发明涉及在携带型信息终端机、无线LAN、WLL(Wireless LocalLoop)等的电子机器和电子装置中使用的高频组件。特别是关于由高频功率放大装置和高频滤波器装置或高频分频器装置构成一体的小型,高性能并且低价格的高频组件。
背景技术
高频组件一般装备在高频功率放大装置和在它近傍配置的高频滤波器装置或高频分频器装置的中间。
该高频功率放大装置随着在移动通讯系统传送容量的日益增加和传送速度的高速化,因使用大的高频功率,所以高频功率放大元件自身的发热量也在增加。
可是,所述高频滤波器装置或高频分频器装置有弱的耐热性质。即用于高频滤波器装置或高频分频器装置的弹性表面波(Acoustic SurfaceWave)元件,一般为了在钽酸锂等压电体基板上传播弹性表面波而形成有梳形电极,但因压电体基板本身的电特性受温度变化的影响大,所以需要设置在离开位于组件内的高频功率放大元件等的发热体的位置。不仅弹性表面波元件,在FBAR、BAW等也有同样问题。以下把这些热不稳定元件总称为“滤波器部件”。
为此,从前整体包括有高频功率放大装置和高频滤波器装置等的高频组件存在有不能完全适应近年来的移动通讯用信息终端机等的小型化、轻量化、低价格化要求的问题。
发明内容
本发明的目的是,提供一种消除由大功率高频功率放大元件产生的热影响,使在它近傍配置的滤波器部件能保持高频滤波特性,并且是小型化而低价格的高频组件。
(1)本发明的高频组件,是在由多个电介体层叠层而成的电介体基板的一层面形成装载功率放大元件用凹部,在它的近傍的同一面或另一面上形成装载滤波器部件用凹部,并把功率放大元件以及滤波器部件安装在各个凹部。至少在装载所述功率放大元件用凹部,与所述功率放大元件接触而安装有传热盖体。在所述装载功率放大元件用凹部和所述装载滤波器部件用凹部之间,形成有其另一端在所述电介体基板的所述的一层面露出的贯通导体。然后,使所述传热盖体和所述贯通导体通过焊材安装在外部电路基板上面的散热用导体。
根据本发明的所述的结构,从功率元件所产生的热通过与功率放大元件直接接合的传热盖体以及焊材,在外部电路基板上面的散热用导体能有效地进行热放散。再有,从功率放大元件向在它近傍配置的滤波器部件的热传送由贯通导体被遮断,而通过贯通导体以及焊材传送到外部电路基板上面的散热用导体,向滤波器部件的热传送能明显地降低。其结果,不会使滤波器部件的高频滤波特性等电特性劣化,而能提供小型高性能的高频组件。而且散热片等的散热部件不需要另有别途,因此对低价格携带型信息终端机等的电子机器和电子装置有为适宜的高频组件。
再有,功率放大元件是装载在电介体基板的安装面形成的凹部内,所以滤波器部件设置在电介体基板的哪个面都可以。如果把功率放大元件以及滤波器部件装载在同一个面,因有可能减少工序数,就能制成更低价格的高频组件。
还有,关于所述高频组件,为降低从功率放大元件产生的热传向滤波器部件的影响,所述电介体层的导热率最好在20W/m·K以下。再有,最好使用比所述装载滤波器元件用凹部周围的电介体层导热率低的电介体层形成所述装载功率放大元件用凹部周围的电介体层。在所述装置功率放大元件用凹部和所述装载滤波器部件用凹部之间应有0.3mm以上的间隔,所述贯通导体的导热率应在100W/m·K,所述贯通导体在所述装载功率放大元件用凹部和所述装载滤波器元件用凹部之间应形成有多条所述贯通导体,应在不同的电介体层形成与所述功率放大元件连接的导体层和与所述滤波器部件连接的导体层等都是更有效的。
通过这些措施,不会使滤波器部件的高频滤波特性,高频分频器特性等的电特性劣化,因此能提供小型高性能的高频组件。
再有,在所述装载滤波器部件用凹部,采用盖体密封也可以,或在该凹部内填充绝缘性树脂也可以。
(2)本发明的高频组件,在由多个电介体层叠层而成的电介体基板的一层面安装着功率放大元件和滤波器元件,在所述功率放大元件安装部的下部形成有贯通电介体基板到另一层面的第1贯通导体,在所述功率放大元件安装部和所述滤波器部件的安装部之间,形成有具另一端在所述另一层面露出的第2贯通导体。然后把所述第1贯通导体以及第2贯通导体的下端,通过焊材安装在外部电路基板上面的散热用导体。
根据本发明的所述结构,从功率放大元件产生的热,通过在功率元件安装部的下部形成的第1贯通导体以及通过焊材在外部电路基板上面的散热用导体能高效率地放散。还有,从功率放大元件向配置在它近傍的滤波器部件的热传送,因由第2贯通导体而被遮断,所以能明显地降低向滤波器部件的热传送。其结果,不会使滤波器部件的高频滤波特性,高频分频器特性等的电特性劣化,从而能提供小型高性能的高频组件。并且,根据这样的结构,对于高频组件的散热片等的散热部件不需要设计另外的用途,就能达到小型化的目的。因此,能提供适合于低价格携带型信息终端机等的电子机器和电子装置的高频组件。
采取在由多个电介体层叠层而成的电介体基板的一个层面上形成安装功率放大元件用凹部以及/或形成安装滤波器部件用凹部,依靠盖体或绝缘树脂密封该凹部内的功率放大元件以及/或滤波器部件,从而可提高组件的可靠性。
在由多个电介体层叠层而成的电介体基板的一个层面上安装滤波器部件安装部的下部,依靠形成贯通电介体基板达到另一主面的第3贯通导体,更能降低传向滤波器部件的热影响。
更进一步说,依靠所述电介体层的导热率在20W/m·K以下,使形成所述装载功率放大元件用凹部周围的电介体层的导热率比形成所述装载滤波器部件用凹部周围的电介体层的导热率低,使所述功率放大元件安装部和所述滤波器部件安装部之间有0.8mm以上的间隔,使与所述滤波器部件连接的导体层和与所述功率放大元件连接的导体层在不同的电介体层形成,就不会使滤波器部件的高频滤波特性,高频分频器特性等的电特性劣化,而能提供更小型高性能的高频组件。
以下,就本发明的具体结构参照图示进行说明。
附图说明
图1是表示本发明高频组件的实施例1的一例的简要剖面图。
图2是表示在本发明的高频组件中的贯通导体的配置例的在图1A-A′线的简要俯视图。
图3是表示在本发明的高频组件中贯通导体配置的其它例的简要俯视图。
图4是表示在本发明的高频组件中贯通导体配置的又一其它例的简要俯视图。
图5是表示本发明高频组件实施例1其它例的简要剖面图。
图6是表示本发明高频组件实施例1又一其它例的简要剖面图。
图7是表示本发明高频组件实施例1又一其它例的简要剖面图。
图8是表示本发明高频组件实施例2的一例的简要剖面图。
图9是表示在本发明的高频组件中贯通导体配置例的简要俯视图。
图10是表示在本发明的高频组件中贯通导体其它配置例的简要俯视图。
图11是表示在本发明的高频组件中贯通导体配置又一其它例的简要俯视图。
图12是表示本发明高频组件实施例2其它例的简要剖面图。
图13是表示本发明高频组件实施例2又一其它例的简要剖面图。
具体实施方式
以下,参照附图详细说明本发明的高频组件。
-实施例1-
图1是表示本发明的高频组件的一实施例的剖面图,在该例中,高频组件1装载在主板等的外部电路基板7上。
高频组件1具有由多个电介体层叠层而成的电介体基板2。电介体层可以使用氧化铝陶瓷、莫来石陶瓷、玻璃陶瓷等低温烧成的陶瓷和有机树脂材料与陶瓷材料的混合材料。特别是在使用铜、银作为导体同时烧结(burn)形成的情况下,使用玻璃陶瓷等低温烧结陶瓷、有机树脂材料和陶瓷材料的混合材料较好,从具有良好的热稳定性考虑,最好是使用玻璃陶瓷等低温烧结的陶瓷。
构成电介体基板2的电介体层的导热率,通过选择使用的陶瓷材料,调整其混合比,就可以控制导热率,其值应控制在20W/m·K以下,特别是应在10W/m·K以下,更好应在5W/m·K以下,最好是应在3W/m·K以下。
在图1的高频组件中,在电介体基板2的下面,按规定间隔形成有装载功率放大元件用凹部2a和装载弹性表示波元件用凹部2b。
在装载功率放大元件用凹部2a的底面(在图中是成为凹部之上的面,而把它称为“底面”)形成有导体层2a1,功率放大元件4的电极通过导体凸起3a与导体层2a1电连接。在此,对于导体凸起3a可使用金和焊锡,热固化型银糊料等。例如在用金时,利用超声波热压合法可使功率放大元件4的电极与导体层2a1实现电连接。再有,使用金比使用焊锡和热固化型银糊料能降低连接电阻而使导体损耗减小。
作为功率放大元件4,例如可用pn结门电路型的场效应型晶体管和肖特基势垒门电路型的场效应晶体管、异质结型的场效应型晶体管、pn结门电路型的异质结场效应型晶体管等。
再有,为保护其连接部和元件表面,在功率放大元件4和导体层2a1之间注入所谓密封树脂(底层填料)5。底层填料5可用环氧树脂和二氧化硅树脂等的通过加热而形成固化的材料。在本发明的高频组件1中,底层填料5所用的固化物的导热率要求在20W/m·K以下,最好使用约10W/m·K以下的环氧树脂制固化物。以此可以抑制从功率放大元件4产生的热传向电介体基板2本身。
还有,在装载功率放大元件用凹部2a的下部开口内,安装有与功率放大元件的底面直接或通过放热用润滑脂等的传热性化合物接触的传热盖体6。该传热盖体6,能把从功率放大元件4产生的热有效地传向外部电路基板7,具体是由金属构成,例如,最好使用由铜等导热率高的金属。
而且,该传热盖体6通过焊材13附着在外部电路基板7的上面形成的散热用导体15。由此,从功率放大元件4产生的热通过传热盖体6和焊材,有效地传送到在外部电路基板7的表面形成的散热用导体15,从而能防止从功率放大元件4产生的热影响组件内的弹性表面波元件8。
并且,为能获得配置在功率放大元件4底面的传热盖体6和外部电路基板7上面的散热用导体15以及接地用电极(无图示)之间的良好的钎焊性能,在传热盖体6的表面最好实施Ni、Sn、焊锡等的镀锡处理。
另一方面,弹性表面波元件8,通过导体凸起3b和由在装载弹性表面波元件用凹部2b的底面形成的导体层2b1组成的电极部实现电连接,并装入装载弹性表面波元件用凹部2b。在导体凸起3b和导体凸起3a一样能使用金和焊锡、热固化型银糊料等,例如在使用金时,能利用超声波热压合法使弹性表面波元件8的电极和导体层2b1实现电连接。
作为弹性表面波元件8可使用例如谐振器型滤波器、谐振子梯型和栅格型连接滤波器、多级IDT(Inter Digital Transducer)型滤波器等。弹性表面波元件8例如在使用谐振器型滤波器的情况下,作为压电体基板,36°Y切入X传播的LiTaO3晶体、64°Y切入X传播的LiNbO3晶体、45°Y切入X传播的LiB4O3晶体等,因机电耦合系数大并且群延迟时间温度系数小,所以适宜使用。还有,对于弹性表面波元件8,因要在压电体基板表面上激发弹性表面波,并使其传播和谐振,所以在其表面至少要设置一对形成相互啮合的梳齿形电极的IDT(Inter DigitalTransducer)电极(无图示)。为获得所需要的滤波特性,该IDT电极以串连和并连等方式连接构成数对梳齿形电极。这种IDT电极利用蒸镀法、阴极真空喷镀法,或CVD法等薄膜形成法在压电体基板上能形成所需要的形状和尺寸。
在图1的组件中,盖体9与弹性表面波元件8离开一定间隔而被安装在装载弹性表面波元件用凹部2b的下部开口内。为弹性表面波元件8的机械性保护以及抑制因IDT电极氧化而引起的劣化,在振动空间有的在装载弹性表面波元件用凹部2b的内部空间里封入低湿度空气等。用环氧树脂和焊材等安装盖体9,并使装载弹性表面波元件用凹部2b形成密封。取代空气封入氮气和氩气等惰性气体,以及比空气导热率低的惰性气体,依然能防止因IDT电极氧化而引起的劣化。
作为盖体9所用材质,可使用SUS、铜、锌白铜等金属和玻璃环氧树脂等树脂。其中,由功率放大元件4产生的热通过传热盖体6传送向外部电路基板7,为防止传送到外部电路基板7的热再通过盖体9传送到弹性表面波元件8,最好使用导热率低的玻璃环氧树脂制的盖体9。
该盖体9与弹性表面波元件8离开一定间隔而安装在装载弹性表面波元件用凹部2b,再依靠在盖体9和外部电路基板7之间设置的空隙部10,能更可靠地抑制由功率放大元件4所产生热的传送。
还有,装载弹性表面波元件用凹部2b的开口,在图1例中是依靠盖体9密封,在该凹部2b内也能依靠填充二氧化硅树脂和环氧树脂等密封树脂进行密封。
所述装载功率放大元件用凹部2a和装载弹性表面波元件用凹部2b之间最好设置有0.3mm以上的间隔,更好是设置有0.5mm以上的间隔。这样可使由功率放大元件4产生的热通过凹部2a和2b之间的电介体层,使传送到弹性表面波元件8的热能充分地减少。
再进一步说,本发明在所述装载功率放大元件用凹部2a和装载弹性表面波元件用凹部2b之间的部分形成有贯通导体11,它的端部在底面露出。然后,该贯通导体11也和传热盖体6一样,通过焊材13与外部电路基板7上面的散热用导体15连接。
贯通导体11依然和所述导体层2a1的延设部连接,但与此同时,或代替它,与在导体层2a1的更上方的电介体层形成的和功率放大元件4的电极连接的导体层(在图所示的2a2、2a3)的延设部连接也可以。
依靠形成的这种贯通导体11,能把从功率放大元件4产生的热中,使传到凹部2a底面的导体层2a1或导体层2a2、2a3的热,以及在凹部2a、2b之间的电介体层传来的热由贯通导体11所吸收,再通过焊材13能有效地把热传送到在外部电路基板7表面形成的散热用导体15。
该贯通导体11位于装载功率放大元件用凹部2a和装载弹性表面波元件用凹部2b的之间,不仅是1条,依靠设置2条以上更能提高所述效果。
表示装载功率放大元件用凹部2a、装载弹性表面波元件用凹部2b以及贯通导体11配置的具体例示于图2~图4。图2是表示沿图1高频组件A-A′线截面的剖面图。图3、图4是表示其它配置例的剖面图。
根据图2,在从平面看斜式配置的装载功率放大元件用凹部2a和装载弹性表面波元件用凹部2b的大致中间部位,形成有2条贯通导体11。图3是有多条贯通导体11围着凹部2a成直线形分布在并列配置的凹部2a和凹部2b的大致中间部位。图4又是有多条贯通导体11按所谓锯齿形分布在并列配置约凹部2a和凹部2b的大致中间部位的示例。
贯通导体11为完成它的功能最好利用导热性良好的金属制成,特别是要从铜、氧化铜、银、银-钯、银-铂、金中至少选出一种作为主成分金属,再以该金属为主成分制成导体。尤其在使从功率放大元件4产生的热传送向电介体基板2,而更难于传向弹性表面波元件8方面,贯通导体11的导热率最好比电介体基板2的导热率增大5倍以上,使用导热率在100W/m·K以上的导体更好。为适合与电介体基板同时烧成时的烧结收缩,在该贯通导体11中含有金属氧化物和玻璃等无机物也可以。
例如,在用约85质量%的银粉、3质量%的硼酸酸铅玻璃、12质量%的二氧化硅配合比制成的这种高热传导的贯通导体11的导热率可达到约150W/m·K。
贯通导体11的断面虽不一样,但最小部分的直径最好在0.1~0.5mm,在形成有多条的情况下,贯通导体的侧面间隔若按0.2~1.0mm的间隔配置为宜。再有,该贯通导体11的断面形状不一定必须是圆形、椭圆形、狭长形(矩形)也可以。
再有,关于本发明的高频组件,如图1所示,凹部2a、2b分别形成有没的浓度,又依靠使在电介体基板2形成的装载功率放大元件用凹部2a的底面和装载弹性表面波元件用凹部2b的底面形成的导体层2a1、2b1分别在不同的电介体层形成,这样与它们在同一电介体层上形成的情况相比较,能使从功率放大元件4通过电介体层和导体层传到弹性表面波元件8的热量能更有效地减少。因此,能更可靠地防止弹性表面波元件8因受热影响而引起的电特性劣化。
关于本发明的高频组件1,如图1所示,通过内部导体配线16和表层导体配线17,以及多支路(via hole)导体18,使功率放大元件4和弹性表面波元件8与装载在电介体基板2上面的电阻、电容、电感线圈、半导体元件等的电子部件12连接。由此,使功率放大元件4和弹性表面波元件8发挥各自的功能,实现所需要的电子线路。再有,按需要在电介体基板2的内部,如若内装有依靠利用导体配线的电容、电感线圈等的高频滤波器(无图示)就能构成具有更高功能化的小型高频组件1。
还有,为保护在高频组件1表面安装的电子元件12和线路,依靠安装金属屏蔽罩14,就可能遮断或抑制来自外部的机械应力和气氛的影响以及电磁噪音。
再有,该高频组件1,作为传送信号用在高频组件1形成的电极垫20通过焊材13与在外部电路基板7表面形成的信号用配线层21连接。
图5是表示本发明的高频组件其它例的剖面图。在图1例,装载弹性表面波元件用凹部26是在与装载功率放大元件用凹部2a形成的面相同的面形成,而在该图5例是在与装载功率放大元件用凹部2a的形成面的相对面,即在表面侧形成。弹性表面波元件8和图1一样,与在凹部2b内形成的导体层2b1连接。还是该例,在凹部2b因填充有绝缘的有机树脂19,弹性表面波元件8被树脂密封。
在上述的实施例中,在位于装载弹性表面波元件用凹部2b和装载功率放大元件用凹部2a的中间部分和图1一样,配置有贯通导体11。这时,贯通导体11的一端和图1一样,在组件1的底面露出,通过焊材13与散热用导体15焊附,其另一端和导体层2a1的延设部连接。贯通导体11和位于叠合层的更上侧的导体层的延设部2a2、2a3连接也可以。
图6是表示本发明高频组件又一其它例的简要剖面图。在图1、图5例中,电介体基板2是用同一材质形成,在图6利用比其它部分具有低导热性的电介体材料2′形成装载功率放大元件用凹部2a的周围。依靠这种配置,该凹部2a周围的电介体材料2′作为绝热材而具有绝热功能,能防止从功率放大元件4产生的热扩散而传送到周围。
图7是表示本发明的高频组件又一其它例的简要剖面图。在图6例,在同一电介体层内存在有导热率不同的2种电介体材料,而在图7例中,和图5一样,在底面形成装载功率放大元件用凹部2a,在顶面设置有装载弹性表面波元件用凹部2b,全部使用低导热性材料2′形成组件1的下部面。
说明本发明所述高频组件的制作方法。在此,作为适宜例,关于电介体基板是由玻璃陶瓷组成物构成的情况做以下说明。
为形成在电介体基板2的各电介体层,首先制作由成为各电介层的玻璃陶瓷组成物构成的陶瓷印刷电路基板。成为电介体层的陶瓷印刷电路基板先按比例混合30~90质量%的硼酸玻璃、硼酸锌玻璃、二氧化硅-三氧化二铝-碱土类氧化物等周知的玻璃和10~70质量%的氧化铝、石英、莫耒石、AIN、镁橄榄石等无机填充物,在该混合物中再混合烷基甲基丙烯酸酯等有机粘合剂、DBP(二丁基酞酸酯)等的可塑剂和甲苯等有机溶剂,用球磨机混匀4~8小时而制成料浆。使用该料浆用定厚器桨叶法进行绝缘胶布带的成形加工,然后把它按规定尺寸切断制成陶瓷印刷电路基板。
然后,在规定陶瓷印刷电路基板上制作形成贯通导体11用的贯通孔,为连接内部导体配线16和表层导体配线17的多支路导体18用的贯通通孔,以及装载功率放大元件用凹部2a和装载弹性表面波元件用凹部2b。为此,采用微型穿孔器、针刺法开孔,又再使含感光树脂的印刷电路基板实施曝光、显像处理等形成凹部。依靠该曝光、显像处理也能形成圆形、椭圆形、长孔等各种形状的贯通孔。
然后,在贯通导体11用的贯通孔和多支路导体18用的贯通孔内填充铜或银系导体糊料。同时,又使用铜或银系导体糊料,采用网板印刷法和凹板印刷法等在各印刷电路基板上印刷形成内层导体配线16、表层导体配线17、导体层2a1、2b1的图案。
在此,对于铜或银系导体糊料可以使用铜粉末、氧化铜粉末、银粉末或属于银合金的银-钯粉末、银-铂粉末。根据需要,例如加入定量的硼酸酸系低融点玻璃和二氧化硅、三氧化二铝、氧化镁、氧化钙等碱土类金属氧化物、三氧化二铋等金属氧化物,再混合乙基纤维素等的有机粘合剂和例如,2,4-三甲基-1,3-戊二醇单异丁酯等的有机溶剂,经均质混匀后使用。
在这些金属粉末中,根据需要混合加入定量的硼酸锌系玻璃、硼酸铅系玻璃等的硼酸酸系低融点玻璃,以及三氧化二铝、氧化镁、氧化钙、二氧化硅、三氧化二铋等的金属氧化物的无机物和乙基纤维素等的有机粘合剂,以及2,4-三甲基-1,3-戊二醇单异丁酯等的有机溶剂,在使用该均质混匀物时,通过相对于金属粉末按比例加入的低融点玻璃和金属氧化物的添加量就能控制导热率。
把按所述方法制得的陶瓷印刷电路基板,例如以多支路导体18为基准对合位置,按层合顺序叠层,采用热压合法而形成未烧结的层合体。
接着,把该未烧结的层合体例如,在氧化气氛中烧结成一体。具体是在氧化气氛或大气气氛中采用在800~1000℃烧结而制成烧结基板。
其后,在凹部2a、2b内装入弹性表面波元件8、功率放大元件4等,用钎焊安装传热盖体6、盖体9,填充密封用有机树脂19,使弹性表面波元件8、功率放大元件4密封。
另外,当把这样的组件安装在外部电路基板7时,在使组件传送信号用电极的垫20和外部电路基板7焊附的同时,使传热盖体6和贯通导体11与在外部电路基板7表面形成的散热用导体15焊附。
再有,如图6所示,在使用具有绝热性的电介体材料形成装载功率放大元件用凹部2a周围的情况下,在电介体基板2的材料中要配入感光性树脂,经曝光显像形成规定的凹部后,在该凹部内填充绝热性电介体材料2′,依靠振动等形成凹部2a、2b,由此制成未烧结的层合体后,再进行烧结是适宜的。
还有,如图7所示,在使用导热率不同的电介体材料形成组件电介体基板2的顶面和底面的情况下,要用分别适合的电介体材料制作印刷电路基板,在分别实施加工后,把它们层合一体化而制成未烧结的层合体,最后再进行烧结是适宜的。
实施例
以下基于实施例和比较例对本发明加以说明。
作为电介体材料使用由硼酸玻璃和氧化铝组成的导热率为3W/m·K和5W/m·K的玻璃陶瓷系电介体材料。作为贯通导体使用150W/m·K的银系导体材料,作为传热盖体使用了铜。用以上材料按所述方法制作高频组件。使用铜-银焊材把该高频组件安装在由玻璃织布-环氧树脂复合材料组成的绝缘基板上形成的,由铜构成的散热用导体和信号用配线层的主印刷电路板表面上。
表1
试验料No. | 组件的结构 | 电介体基板的导热率(W/m·K) | 凹部间的间隔(mm) | 有无焊附传热盖体 | 贯通导体的条数 | 装载功率放大元件用凹部(℃) | 装载弹性表面波元件用凹部(℃) |
*1 | - | 5 | 0.5 | 无 | 无 | 110 | 75 |
*2 | - | 5 | 0.5 | 有 | 无 | 80 | 58 |
3 | 1 | 5 | 0 5 | 有 | 2 | 78 | 50 |
4 | 1 | 3 | 0.5 | 有 | 2 | 80 | 45 |
5 | 1 | 3 | 0.5 | 有 | 5 | 80 | 40 |
6 | 1 | 3 | 0.5 | 有 | 8 | 79 | 32 |
7 | 5 | 5 | 0.5 | 有 | 2 | 80 | 43 |
8 | 6 | 5(PA周围3) | 0.5 | 有 | 2 | 78 | 44 |
9 | 7 | 5(PA侧3) | 0.5 | 有 | 2 | 79 | 38 |
*表示本发明范围以外例
在此,设定在功率放大元件(PA)的电源ON/OFF比(工率比)取为1/8的状态下,当送入0dB的输入信号,能得到33.5dBm的输出的条件,测定装载功率放大元件用凹部和装载弹性表面波元件用凹部内的稳定温度。
再有,用导热分析模拟程序,计算出在使PA周围的组成材料的导热率变化时的它们的温度(试验料No.8,9)。
根据表1的结果,可以看出在没有传热盖体或贯通导体的情况下(试验料No.1,2),在装载功率放大元件用凹部内、在装载弹性表面波元件用凹部内的温度比具有传热盖体和贯通导体情况下(试验料No.3~9)的温度增高。
根据本发明的结构,通过设置传热盖体和贯通导体能有效地扩散功率放大元件产生的热,并降低对弹性表面波元件的影响。
还有,在这样的结构中贯通导体的条数越多,电介体基板的导热率越小,其效果更佳。在用2种电介体材料形成电介体基板的情况下(试验料No.8,9),当增加贯通导体的条数时能得到同样的结果。
-实施例2-
图8是表示本发明高频组件的实施例2的剖面图。在该例高频组件1装载安置在主印刷电路板等的外部电路基板7。
在高频组件1的电介体基板2是由多个电介体层叠层而成,其材料可使用与在实施例1中说明的相同的组成物。
关于构成电介体基板2的电介体层的导热率与在第一实施方式中说明的相同。
关于图8的高频组件,在电介体基板2的顶面,按规定间隔隔开形成由凹部组成的功率放大元件安装部2a和由平面组成的弹性表面波元件安装部2b。
在功率放大元件安装部2a的底面形成有导体层2a1。功率放大元件4装载在它的上面。功率放大元件4通过引线接合3a和内层导体配线16实现电连接。
构成功率放大元件4的晶体管元件等与在实施例1中说明的一样。
还有,在功率放大元件4的上部,以及功率放大元件4和导体层2a1之间,为保护其连接部和元件表面,注入有密封树脂5。密封树脂5的材料,与在实施例1中说明的一样,由此,就能抑制从功率放大元件4产生的热传向电介体基板2本身。
在功率放大元件安装部2a的下部,形成有贯通电介体基板2到达底面的第1贯通导体6a。该第1贯通导体6a容易把热传向外部电路基板7。第1贯通导体6a的导热率最好比电介体基板2的导热率增大5倍以上,使用导热率在100W/m·K以上的更好。第1贯通导体6a最细部分的直径是0.1~0.5mm为宜。该贯通导体6a不需要一定是圆形、椭圆形、狭长形(矩形)也可以。
该第1贯通导体6a通过焊材安装在外部电路基板7上面的散热用导体15。由此,从功率放大元件4产生的热,通过第1贯通导体6a以及焊材13能有效地传送到在外部电路基板7的表面形成的散热导体15,所以从功率放大元件4虽然有热产生,但能防止组件内的弹性表面波元件8受到热影响。
另一方面,弹性表面波元件8通过导体凸起3b与在弹性表面波元件安装部2b的底面形成的导体层2b1的电极部电连接并装载在弹性表面波元件安装部2b。在此,对于导体凸起3b可以使用金和焊锡、热固化型银糊料等。
构成弹性表面波元件8的滤波器元件的结构,因和在实施例1中说明的结构相同,所以省略说明。
再有,弹性表面波元件安装部2b,在图8例是采用涂敷二氧化硅树脂和环氧树脂等密封树脂5进行密封,但由于弹性表面波元件8是安装在凹部,所以采用密封树脂5进行密封也是可能的。
根据本发明,在所述功率放大元件安装部2a和弹性表面波元件安装部2b之间,形成有从所述电介体基板2的顶面延伸到底面的第2贯通导体11,该第二贯通导体11也和第1贯通导体6a一样,通过焊材13安装在外部电路基板7表面形成的散热用导体15。
依靠形成的这种第2贯通导体11,能使从功率放大元件4产生的热中从功率放大元件安装部2a传送到密封树脂5的热,以及在两个安装部2a、2b间的电介体层2传来的热用第2贯通导体所吸收,在通过焊材13能有效地传送到在外部电路基板7形成的散热用导体15。
再有,根据本发明,在功率放大元件安装部2a的底面形成有导体层2a1,该导体层向水平方向延设,这个延设部与所述第2贯通导体11连接。依靠这样的结构,使导体层2a1所吸收的周围的热,以及在第二贯通导体导出的热都能传送到在外部电路基板7表面的散热用导体15而有效地使热散发。
还有,根据本发明,在滤波器元件安装部2b的下面最好形成有第3贯通导体23。这第3贯通导体23也和第1贯通导体6a、第2贯通导体11一样,以延伸到电介体层基板2的底面方式形成,并通过焊材13安装在外部电路基板7上面的散热用导体15。依靠形成该第3贯通导体23能降低滤波器元件8自身温度的上升。
所述第2贯通导体11在位于功率放大元件安装部2a和滤波器元件安装部2b之间,依靠设置不仅1条,可以2条以上,就更能提高所述效果。
把第2贯通导体设置有多条的具体例示于图9~图11。图9是从上面看图8的高频组件的剖面图,只是省略了弹性表面波元件以及功率放大元件。图10、图11是表示其它例的剖面图。
根据图9例,在从平面看斜式方向配置的功率放大元件安装部2a和滤波器元件安装部2b的大致中间部位形成有2条第二贯通导体11。在图10同是在中间部位,以包围功率放大元件安装部2a方式成反L形配置有多条第2贯通导体11。另外,图11是在相同的中间部位,以包围功率元件安装部2a方式成锯齿形配置有多条第2贯通导体11的示例。
所述功率放大元件安装部2a和弹性表面波元件安装部2b之间的距离最好设置在0.8mm以上,更好是依靠设置1.0mm以上的间隔,以确保能充分降低从功率放大元件4产生的热,通过安装部2a和2b之间的电介体层2传送到弹性表面元件8。再有,所谓“功率放大元件安装部2a和弹性表面波元件安装部2b之间的距离”是指在安装功率放大元件4和弹性表面波元件8时的平面性观察时的最短距离。例如,在图9是用“L”表示。
在本发明中,第1、第2、第3贯通导体6a、11、23为发挥其功率,最好用导热性好的金属制成,特别是从在铜、氧化铜、银、银-钯、银-铂、金组中至少选择1种为主成分金属,再以该金属为主成分而制成。尤其,至少是贯通导体11,在为使从功率放大元件4产生的热通过电介体基板2难于传送到滤波器元件8,它的导热率最好比电介体基板2的导热率增大5倍以上,更好是使用导热率为100W/m·K以上的导体。并且,这些贯通导体6a、11、23采用与电介体基板2同时烧结形成,因此,为适合与电介体基板烧结时的收缩,含有金属氧化物和玻璃等无机物也可以。
这种高导热的贯通导体,例如在用配比为银粉末80~90质量%、硼酸铅玻璃1~4质量%、二氧化硅5~15质量%混合制成时,其导热率可达130W/m·K以上。
第1、第2、第3贯通导体6a、11、23无论哪个其直径(最短直径)最好在0.1~0.5mm,在形成有多条的情况下,依靠彼此相邻贯通导体按侧面间的间隔为0.2~1.0mm配置,一方面能抑制向贯通导体间的电介体的裂纹产生,一方面又能依靠多条贯通导体提高导热效率。再有,这些贯通导体6a、11、23其断面不需要一定是圆形,是椭圆形、狭长形(矩形)也可以。
再有,关于本发明的高频组件,如图8所示,依靠采用形成分别具有不同浓度的功率放大元件安装部2a、弹性表面波元件安装部2b的凹部等,以及依靠分别在不同的电介体层形成在电介体基板2形成的功率放大元件安装部2a的底面形成的导体层2a1,以及在弹性表面波元件安装部2b的底面形成的导体层2b1,与它们在同一电介体层上形成的情况相比较,从功率放大元件4通过电介体层和导体层传到弹性表面表面波元件8的热量可以更有效地减少。因此,能更可靠地防止因受热影响而使弹性表面波元件8的电特性劣化。
在本发明高频组件1电介体基板2的上面装载有电阻、电容、电感、半导体元件、MEMS(Micro Electro Mechnical Systems)等电子部件12。通过在电介体基板2的表面和内部形成的内部导体配线16和表层导体配线17,以及多支路导体18与电子部件和功率放大元件4以及弹性表面波元件8的电连接,构成所需要的电子电路。还可以根据需要,在电介体基板2的内部,通过内置利用导线连接的由电容、电感等组成的高频滤波器(无图示),能构成具有更高功能小型的高频组件1。
再有,为保护安装在高频组件1表面的电子部件12和电子线路,依靠安装屏蔽罩14就能遮断或抑制来自外部的机械应力和气氛的影响以及电磁噪音。
依靠在高频组件1的表面内装电阻器和芯片电感等电子部件12,以及在电介体基板2的内部内装电感,就能构成实施有防静电措施的高频组件1。
还有,该高频组件1,与外部电路基板7相对,在高频组件1形成的传送信号用电极垫20,通过焊材13与在外部电路基板7表面形成的信号用配线层21连接。
图12是表示本发明高频组件其它例的剖面图。在图8例,弹性表面波元件安装部2b安装在电介体基板2的表面,而该图12,弹性表面波元件安装部2b安置在电介体基板2的凹部内的底面形成的导体层2b1。用线接合法又使弹性表面波元件8与信号线路连接也可以。
在图12的高频组件,在凹部形的弹性表面波元件安装部2b,与弹性表面波元件8离开一定间隔而安装着盖体9。为弹性表面波元件8的机械性保护以及抑制因IDT电极氧化而引起的劣化,在振动空间有的在弹性表面波元件2b的内部空间里密封入低湿度的空气等。盖体9使弹性表面波元件8密封,它用环氧树脂和焊材等安装在电介体基板2。取代空气,即使密封入氮气和氩气等惰性气体或比空气还低导热的惰性气体,依然能防止因IDT电极氧化而引起的劣化。
作为盖体9所用材质,能用SUS、铜、锌白铜等金属和玻璃环氧树脂等的树脂。
在图12实施例,在位于弹性波表面元件安装部2b和功率放大元件安装部2a的中间部分,和图8一样形成有第2贯通导体11。此时,贯通导体11的一端和图8一样,在组件1的底面露出,通过焊材13与散热导体15焊附。其另一端和导体层2a1的延设部连接。该另一端延设置更上侧也可以。
图13是表示本发明的高频组件又一其它例的简要剖面图。在图8及图12例,电介体基板2是由同一材质形成,在图13用比其它部位具有低导热性的电介体材料2′形成功率放大元件安装部2a的周围。依靠这种结构,使该安装部2a周围的低导热性的电介体材料2′具有作为绝热材料的功能,从而能防止从功率放大元件4产生的热向周围扩散传送。
本发明所述高频组件,可按以下方法制造。在此,作为适宜例,就电介体基板由玻璃陶瓷等可低温烧结的组成物构成的情况做以下说明。
为形成在电介体基板2的各电介体层,首先制作由成为各电介层的玻璃陶瓷组成物构成的陶瓷印刷电路基板。成为电介体层的陶瓷印刷电路基板先按比例混合30~90质量%的硼酸玻璃、硼酸锌玻璃、二氧化硅-三氧化二铝-碱土类氧化物等周知的玻璃和10~70质量%的氧化铝、石英、莫耒石、AIN、镁橄榄石等无机填充物,在该混合物中再混合烷基甲基丙烯酸酯等有机粘合剂、DBP(二丁基酞酸酯)等的可塑剂和甲苯等有机溶剂,用球磨机混匀4~8小时而制成料浆。使用该料浆用定厚器桨叶法进行绝缘胶布带的成形加工,然后把它按规定尺寸切断制成陶瓷印刷电路基板。
然后,在规定陶瓷印刷电路基板上制作形成贯通导体11用的贯通孔,为连接内部导体配线16和表层导体配线17的多支路导体18用的贯通通孔,以及装载功率放大元件用凹部2a和装载弹性表面波元件用凹部2b。为此,采用微型穿孔器、针刺法开孔,又再使含感光树脂的印刷电路基板实施曝光、显像处理等形成凹部。通过该曝光、显像处理也能形成圆形、椭圆形、长孔等各种形状的贯通孔。
然后,在贯通导体11用的贯通孔和多支路导体18用的贯通孔内填充铜或银系导体糊料。同时,又使用铜或银系导体糊料,采用网板印刷法和凹板印刷法等在各印刷电路基板上印刷形成内层导体配线16、表层导体配线17、导体层2a1、2b1的图案。
在此,对于铜或银系导体糊料可以使用铜粉末、氧化铜粉末、银粉末或属于银合金的银-钯粉末、银-铂粉末。根据需要,例如加入定量的硼酸酸系低融点玻璃和二氧化硅、三氧化二铝、氧化镁、氧化钙等碱土类金属氧化物、三氧化二铋等金属氧化物,再混合乙基纤维素等的有机粘合剂和例如,2,4-三甲基-1,3-戊二醇单异丁酯等的有机溶剂,经均质混匀后使用。
在这些金属粉末中,根据需要混合加入定量的硼酸锌系玻璃、硼酸铅系玻璃等的硼酸酸系低融点玻璃,以及三氧化二铝、氧化镁、氧化钙、二氧化硅、三氧化二铋等的金属氧化物的无机物和乙基纤维素等的有机粘合剂,以及2,4-三甲基-1,3-戊二醇单异丁酯等的有机溶剂,在使用该均质混匀物时,依靠相对于金属粉末按比例加入的低融点玻璃和金属氧化物的添加量就能控制导热率。
把按所述方法制得的陶瓷印刷电路基板,例如以多支路导体18为基准对合位置,按层合顺序叠层,采用热压合法而形成未烧结的层合体。
接着,把该未烧结的层合体例如,在氧化气氛中烧结成一体。具体是在氧化气氛或大气气氛中采用在800~1000℃烧结而制成烧结基板。
其后,在安装部2a、2b内安装弹性表面波元件8、功率放大元件4等,又焊附盖体9,又填充密封用有机树脂而密封。
再有,把这样的组件安装在外部电路基板7时,在焊附组件的传送信号用电极延设部20的同时,使第1贯通导体6、第2贯通导体11、第3贯通导体23与在外部电路基板7的表面形成的散热用导体15焊附。
还有,如图13,在采用具有绝热性的电介体材料形成功率放大元件安装部2a的周围时,一般在电介体基板材料中配入感光性树脂,经曝光显像而形成规定的凹部后,在其凹部内填充绝热性电介体材料,依靠再经振动等形成凹部,在这样制成未烧结的层合体后,在进行烧结是适宜的。
实施例
以下基于实施例和比较例对本发明加以说明。
作为电介体材料,使用由硼酸酸玻璃和氧化铝组成的导热率为3W/m·K及5W/m·K的玻璃陶瓷系电介体材料。作为贯通导体使用150W/m·K的银系导体材料。按所述的方法制作高频组件,把它用铜-银系焊材安装在由玻璃织布-环氧树脂组成的绝缘板上形成有由铜组成的散热用导体和信号用配线层的基板母板的表面上。
在此,设定在功率放大元件(PA)的电源ON/OFF比(工率比)取为1/8的状态下,当送入0dB的输入信号时,能得到33.5dBm的输出的条件,测定功率放大元件安装部及弹性表面波元件安装部内的稳定温度。
再有,用模拟试验程序解析导热,计算使PA周围的电介体基板的导热率变化时的它们的温度(试验料No.9)。
表2
试验料No. | 组件的结构 | 电介体基板的导热率(W/m·K) | 安装部间的间隔(mm) | 第2贯通导体的条数 | 功率放大元件安装部(℃) | 滤波器元件安装部(℃) |
*1 | - | 5 | 0.5 | 无 | 95 | 80 |
*2 | - | 5 | 0.8 | 无 | 90 | 75 |
3 | 8 | 5 | 0.8 | 2 | 87 | 59 |
4 | 8 | 3 | 1.2 | 2 | 81 | 47 |
5 | 12 | 3 | 0.8 | 2 | 84 | 55 |
6 | 12 | 3 | 0.8 | 5 | 81 | 49 |
7 | 12 | 5 | 0.8 | 9 | 83 | 45 |
8 | 12 | 5 | 0.8 | 2 | 87 | 57 |
9 | 13 | 5(PA周围3) | 0.8 | 2 | 80 | 55 |
*表示本发明范围以外例
从表2的结果看出,根据本发明的结构(试验料No.3~9),依靠设置第1的贯通导体和第2的贯通导体,能使功率放大元件的热有效地散热,能降低传向表面波元件的影响。
还有,在本发明的结构中,第2贯通导体的条数越多,电介体基板的导热率越小,其效果越佳。当用2种电介体材料形成电介体基板时,也能得到同样的结果。
以上完全是本发明的实施方式的示例,但本发明不只限于此,只要在不脱离本发明要点的范围内,可以进行各种变更和改良。
Claims (21)
1、一种高频组件,其特征是:具有:由多个电介体层叠层而成的电介体基板、安装在电介体基板的一方的层面上的装载功率放大元件用凹部上的功率放大元件、安装在电介体基板的同一面或其它面上的装载弹性表面波元件用凹部上的滤波器部件、形成在电介体基板内的一个电介体层上的与所述功率放大元件电连接的导体层、被安装成与所述功率放大元件接触的传热性盖体、被设置在所述装载功率放大元件用凹部与所述装载滤波器部件用凹部之间的,其一方的端部在所述电介体基板的所述一方的层面上露出的贯通导体,
所述传热盖体以及所述贯通导体通过焊材与外部电路基板上面的散热用导体连接。
2、根据权利要求1所述的高频组件,其特征是:所述导体层形成在所述装载功率放大元件用凹部的底面上。
3、根据权利要求1所述的高频组件,其特征是:所述电介体层的导热率在20W/m·K以下。
4、根据权利要求1所述的高频组件,其特征是:由比所述装载滤波器部件用凹部周围的电介体层导热率低的电介体层形成所述装载功率放大元件用凹部周围的电介体层。
5、根据权利要求1所述的高频组件,其特征是:所述装载功率放大元件用凹部与所述装载滤波器部件用凹部的间隔在0.3mm以上。
6、根据权利要求1所述的高频组件,其特征是:所述贯通导体的导热率在100W/m·K以上。
7、根据权利要求1所述的高频组件,其特征是:在所述装载功率放大元件用凹部与所述装载滤波器部件用凹部之间,形成多条所述贯通导体。
8、根据权利要求1所述的高频组件,其特征是:还包括形成在电介体基板内的一个电介体层上的与所述滤波器部件电连接的第2导体层,该第2导体层和形成在所述的电介体基板内的一个电介体层上的与所述功率放大元件电连接的导体层分别被形成在不同的电介体层上。
9、根据权利要求8所述的高频组件,其特征是:所述第2导体层是形成在所述装载功率放大元件用凹部的底面上。
10、根据权利要求1所述的高频组件,其特征是:由盖体密封所述装载滤波器部件用凹部。
11、根据权利要求1所述的高频组件,其特征是:在所述装载滤波器部件用凹部的该凹部内填充有绝缘性树脂。
12、根据权利要求1所述的高频组件,其特征是:所述滤波器部件,是弹性表面波元件SAW、FBAR、BAW中的任任意一种。
13、一种高频组件,其特征是。具有:由多个电介体层叠层而成的电介体基板、安装在电介体基板的一方的层面上的功率放大元件、安装在电介体基板的同一层面上的滤波器部件、形成在所述功率放大元件安装部的下部上的贯通至电介体基板的另一方的层面的第1贯通导体、设置在所述功率放大元件安装部与所述滤波器部件安装部之间的,其一方的端部露出在所述另一方的层面上的第2贯通导体,
所述第1贯通导体及第2贯通导体通过焊材与在外部电路基板上面的散热用导体连接。
14、根据权利要求13所述的高频组件,其特征是:在所述电介体基板的一方的层面上形成装载功率放大元件用凹部,在该凹部内安装功率放大元件,并用绝缘性树脂密封功率放大元件。
15、根据权利要求13所述的高频组件,其特征是:在所述电介体基体的一方的层面上形成安装滤波器部件用凹部,在该凹部内安装滤波器部件,并用盖体覆盖滤波器部件。
16、根据权利要求13所述的高频组件,其特征是:在被安装在电介体基板的一方的层面上的滤波器部件安装部的下部上,形成贯通至电介体基板的另一方的面的第3贯通导体。
17、根据权利要求13所述的高频组件,其特征是:所述电介体层的导热率在20W/m·K以下。
18、根据权利要求13所述的高频组件,其特征是:用比所述滤波器部件安装部周围的电介体层的导热率低的电介体层形成所述功率放大元件安装部周围的电介体层。
19、根据权利要求13所述的高频组件,其特征是:所述功率放大元件安装部和所述滤波器部件安装部的间隔在0.8mm以上。
20、根据权利要求13所述的高频组件,其特征是:在所述滤波器部件安装部的下部的电介体层上形成与滤波器部件连接的导体层,该导电层与在所述功率放大元件安装部的下部的电介体层上的与功率放大元件连接的导体层分别被形成在不同的电介体层上。
21、根据权利要求13所述高频组件,其特征是:所述滤波器部件是弹性表面波元件SAW、FBAR、BAW中的任意一种。
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Also Published As
Publication number | Publication date |
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CN1236641C (zh) | 2006-01-11 |
DE10308448A1 (de) | 2003-10-09 |
DE10308448B4 (de) | 2008-04-30 |
US20030169575A1 (en) | 2003-09-11 |
US6961245B2 (en) | 2005-11-01 |
US20050146854A1 (en) | 2005-07-07 |
US6873529B2 (en) | 2005-03-29 |
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