CN105931697A - 纳米晶体的合成、盖帽和分散 - Google Patents
纳米晶体的合成、盖帽和分散 Download PDFInfo
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- CN105931697A CN105931697A CN201610252337.0A CN201610252337A CN105931697A CN 105931697 A CN105931697 A CN 105931697A CN 201610252337 A CN201610252337 A CN 201610252337A CN 105931697 A CN105931697 A CN 105931697A
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- NMEPHPOFYLLFTK-UHFFFAOYSA-N trimethoxy(octyl)silane Chemical compound CCCCCCCC[Si](OC)(OC)OC NMEPHPOFYLLFTK-UHFFFAOYSA-N 0.000 description 1
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- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
- VNDYJBBGRKZCSX-UHFFFAOYSA-L zinc bromide Chemical compound Br[Zn]Br VNDYJBBGRKZCSX-UHFFFAOYSA-L 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
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- NHXVNEDMKGDNPR-UHFFFAOYSA-N zinc;pentane-2,4-dione Chemical compound [Zn+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O NHXVNEDMKGDNPR-UHFFFAOYSA-N 0.000 description 1
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- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
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- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/67—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
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- C—CHEMISTRY; METALLURGY
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
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- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C01P2004/00—Particle morphology
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- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
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- Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/895—Manufacture, treatment, or detection of nanostructure having step or means utilizing chemical property
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Metallurgy (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Composite Materials (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Emulsifying, Dispersing, Foam-Producing Or Wetting Agents (AREA)
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Abstract
Description
Claims (58)
Applications Claiming Priority (5)
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US32731310P | 2010-04-23 | 2010-04-23 | |
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US40706310P | 2010-10-27 | 2010-10-27 | |
US61/407,063 | 2010-10-27 | ||
CN201180030661.3A CN102947218B (zh) | 2010-04-23 | 2011-04-25 | 纳米晶体的合成、盖帽和分散 |
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CN201180030661.3A Division CN102947218B (zh) | 2010-04-23 | 2011-04-25 | 纳米晶体的合成、盖帽和分散 |
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CN201610252337.0A Active CN105931697B (zh) | 2010-04-23 | 2011-04-25 | 纳米晶体的合成、盖帽和分散 |
CN201610252371.8A Pending CN105858600A (zh) | 2010-04-23 | 2011-04-25 | 纳米晶体的合成、盖帽和分散 |
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Cited By (1)
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CN113227463A (zh) * | 2018-11-20 | 2021-08-06 | 皮瑟莱根特科技有限责任公司 | TiO2纳米晶体的合成、封端和分散 |
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WO2011038111A1 (en) | 2009-09-23 | 2011-03-31 | Crystalplex Corporation | Passivated nanoparticles |
JP6178725B2 (ja) | 2010-04-23 | 2017-08-09 | ピクセリジェント・テクノロジーズ,エルエルシー | ナノ結晶の合成、キャップ形成および分散 |
US8920675B2 (en) | 2010-10-27 | 2014-12-30 | Pixelligent Technologies, Llc | Synthesis, capping and dispersion of nanocrystals |
US9193850B2 (en) * | 2011-08-11 | 2015-11-24 | Samsung Electronics Co., Ltd. | Nanocomposite, process for preparing the same, and surface emitting device |
US9359689B2 (en) * | 2011-10-26 | 2016-06-07 | Pixelligent Technologies, Llc | Synthesis, capping and dispersion of nanocrystals |
US9187643B2 (en) | 2011-11-21 | 2015-11-17 | University Of South Carolina | Silicone based nanocomposites including inorganic nanoparticles and their methods of manufacture and use |
WO2014159927A2 (en) * | 2013-03-14 | 2014-10-02 | Nanosys, Inc. | Method for solventless quantum dot exchange |
KR102074953B1 (ko) * | 2013-06-13 | 2020-02-07 | 삼성전자주식회사 | 폴리이미드 전구체 조성물, 폴리이미드의 제조 방법, 상기 제조 방법에 따라 제조한 폴리이미드, 및 상기 폴리이미드를 포함하는 필름 |
US9513406B2 (en) | 2013-07-17 | 2016-12-06 | University Of Oregon | Soluble functionalized nanoparticles for use in optical materials |
US20150054425A1 (en) * | 2013-08-21 | 2015-02-26 | Cree, Inc. | Nanocomposite compositions and methods of making |
KR20160060739A (ko) * | 2013-09-23 | 2016-05-30 | 픽셀리전트 테크놀로지스 엘엘씨 | 고 굴절률 실리콘 나노복합재 |
KR102223504B1 (ko) * | 2013-09-25 | 2021-03-04 | 삼성전자주식회사 | 양자점-수지 나노복합체 및 그 제조 방법 |
EP2886128A1 (en) | 2013-12-20 | 2015-06-24 | Nanobiotix | Pharmaceutical composition comprising nanoparticles, preparation and uses thereof |
DE102014202718A1 (de) * | 2014-02-14 | 2015-08-20 | Evonik Degussa Gmbh | Beschichtungszusammensetzung, Verfahren zu ihrer Herstellung und ihre Verwendung |
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