CN105849221A - 胺取代的三甲硅烷基胺和三-二甲硅烷基胺化合物 - Google Patents
胺取代的三甲硅烷基胺和三-二甲硅烷基胺化合物 Download PDFInfo
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- CN105849221A CN105849221A CN201480064594.0A CN201480064594A CN105849221A CN 105849221 A CN105849221 A CN 105849221A CN 201480064594 A CN201480064594 A CN 201480064594A CN 105849221 A CN105849221 A CN 105849221A
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- Prior art keywords
- branched
- straight chain
- alkyl
- silicyl
- independently selected
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 37
- 125000003277 amino group Chemical group 0.000 title abstract 2
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- 239000003054 catalyst Substances 0.000 claims abstract description 61
- 150000001412 amines Chemical class 0.000 claims abstract description 43
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 39
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 29
- 150000002367 halogens Chemical class 0.000 claims abstract description 24
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- 150000003624 transition metals Chemical class 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims abstract description 9
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- 239000000376 reactant Substances 0.000 claims description 59
- -1 cyclic secondary amine Chemical class 0.000 claims description 52
- 239000000203 mixture Substances 0.000 claims description 52
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- 238000006243 chemical reaction Methods 0.000 claims description 47
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 claims description 42
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 claims description 34
- 125000004650 C1-C8 alkynyl group Chemical group 0.000 claims description 24
- 239000002243 precursor Substances 0.000 claims description 24
- 125000000217 alkyl group Chemical group 0.000 claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
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- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 17
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
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- 239000003863 metallic catalyst Substances 0.000 claims description 2
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- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 claims 2
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims 1
- 150000001721 carbon Chemical group 0.000 claims 1
- 229920006395 saturated elastomer Polymers 0.000 claims 1
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- KOOADCGQJDGAGA-UHFFFAOYSA-N [amino(dimethyl)silyl]methane Chemical class C[Si](C)(C)N KOOADCGQJDGAGA-UHFFFAOYSA-N 0.000 description 18
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- 230000015572 biosynthetic process Effects 0.000 description 10
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- 239000010948 rhodium Substances 0.000 description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229910000077 silane Inorganic materials 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
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- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
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- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
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- 239000012038 nucleophile Substances 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
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- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
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- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
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- 229910052682 stishovite Inorganic materials 0.000 description 1
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- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
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- 229910052718 tin Inorganic materials 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- 125000005023 xylyl group Chemical group 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
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- 239000011701 zinc Substances 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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Abstract
本发明描述了不含卤素的被胺取代的三甲硅烷基胺和三‑二甲硅烷基胺化合物以及它们的制备方法,其中相应未取代的三甲硅烷基胺和胺在过渡金属催化剂的催化下进行脱氢偶联反应。这种新方法是基于Si‑H和N‑H结构部分的催化脱氢偶联以形成含Si‑N的化合物和氢气。此方法可以用过渡金属多相催化剂催化,例如负载在碳上的Ru(0)、负载在MgO上的Pd(0),以及用作均相催化剂的过渡金属有机金属络合物。含‑Si‑N的产物是不含卤素的。这些化合物可以用于通过化学气相沉积方法沉积薄膜,或通过原子层沉积方法沉积含Si膜。
Description
本申请要求2013年9月27日递交的美国临时专利申请No.61/883,452的优先权。要求此美国临时专利申请的优先权益。
发明背景
在文献中公开的用于形成硅杂原子和锗杂原子键的大多数方法涉及氯硅烷和亲核物质(胺、膦等)的反应。这些反应是基于纯脱卤化氢反应,由此形成1当量的卤化氢,需要用碱除去卤化氢,形成大量的必须过滤出去的盐。此事实也将此反应的范围限制为能与碱相容的基质,导致产物被卤素例如氯和氨基卤化物污染。
硅烷化合物例如单硅烷、乙硅烷和三硅烷能用于各种应用中。在半导体领域中,硅烷化合物通常作为原料用于经由化学气相沉积(CVD)制备硅基介电膜或半导体膜,例如氮化硅、氧化硅或氧氮化硅。更具体而言,硅烷化合物可以通过与含氮的反应气体例如氨反应制备氮化硅,通过与含氧气体例如氧气反应制备氧化硅,以及与含氮气体和含氧气体反应制备氧氮化硅。
目前,通过CVD制备氮化硅膜的标准方法涉及使得氨气体或其它胺(氨基化合物)与卤代硅烷例如氯硅烷(硅烷化合物)反应;但是氯化铵或氢氯化胺通过此反应作为副产物产生。氯化铵是白色固体并且原样聚集和阻塞CVD反应装置的排气管线。氢氯化胺盐是在用于电子应用的氨基硅烷化合物中的十分不利的污染物,因为它们能与金属在CVD室中反应并使得半导体材料的电性能变差或导致形成其它类型的缺陷。另外,公知这些盐能通过解离-重组过程升华,产生HCl。氯化氢是腐蚀性气体,会损害任何在CVD室中进行的反应以及CVD室本身。来自这些或任何其它来源的活泼氯会引起这些不利影响。
所以在CVD方法中希望获得不含卤素的原料。
附图简述
图1是典型的反应器装置,其中反应器容器是配备有搅拌器的高压釜反应器,并与能提供真空和反应物的歧管连接。
图2是典型的反应器装置,其中反应器容器与冷凝器连接以允许排出氢气,并与带有过滤器的浸渍管连接以取出产物。
发明详述
开发了合成具有硅-氮键的化合物且不会形成卤素盐副产物的方法。这里要求保护和通过所述合成方法制备的所有化合物是“不含卤素的”,此术语是如本文所定义的。这种方法是基于氢气的催化脱氢反应以形成气体和氮硅键。此方法是用过渡金属催化剂催化的。催化剂可以是多相或均相的。用于仲胺的通用反应如反应式1所示。通用反应显示在反应式1中。反应式1的反应是放热的。此反应可以在溶剂中或在不存在溶剂的情况下进行。此反应可以在间歇反应器或连续流反应器中进行。当使用间歇反应器时,反应器可以连接到与冷阱相连的冷凝器(图2)。在此工艺中,所形成的氢气可以在进行反应的同时排出。压力可以通过在冷凝器和低温冷阱之间连接的背压调节阀控制。低温冷阱可以与排气管线连接,从而允许将氢气在反应期间和/或之后从体系送出。具有过滤器的浸渍管允许容易地从容器取出产物。
本说明书中使用的术语“胺”总是表示仲胺,除非另有说明。
1.(H3Si)3N+nHNR1R2+mHNR3R4+kHNR5R6=(R1R2N)n
(R3R4N)m(R5R6N)k(NSi3H(9-n–m-k))+(n+m+k+)H2
其中n=1-3;m=0-3;k=0-3;R1、R3和R5独立地选自H,直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或者被直链或支化C1-C6烷基取代的甲硅烷基,R1R2N、R3R4N和R5R6N可以是环状仲胺,包括氮丙啶、氮杂环丁烷、哌啶、吡咯烷、吡咯、咪唑、吡唑、吲哚,或所述环状仲胺的任何在碳上被取代的衍生物;R2、R4和R6独立地选自直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或者被直链或支化C1-C6烷基取代的甲硅烷基,环状仲胺,其包括氮丙啶、氮杂环丁烷、哌啶、吡咯烷、吡咯、咪唑、吡唑、吲哚或环状仲胺的任何在碳上被取代的衍生物。
烷基取代基的非限制性例子包括:甲基,乙基,丙基,异丙基,丁基,叔丁基,仲丁基,异丁基,戊基,新戊基,异戊基,己基,异己基。芳基取代基的非限制性例子包括:苯基,甲苯基,二甲苯基,萘基,吡啶基。
链烯基是定义为任何单价的脂族烃基CnH2n-1(例如2-丁烯基CH3CH:CHCH2-),其通过从烯烃除去一个氢原子得到。其中n=2-8。
炔基是定义为任何具有碳-碳三键且具有通式CnH2n-2的一系列开链烃。其中n=2-8。
根据胺化合物的结构和Si化合物的结构以及Si-N的摩尔比率,可以形成许多含有Si-N键的分子。这些含有Si-N键的分子可以是直链或支化的。下面各自描述直链或支化的组合方式以及合成方法。
一种具有下式的化合物:
(R1R2N)n(R3R4N)m(R5R6N)k(NSi3H(9-n–m-k));
其中n=1-3;m=0-3;k=0-3;R1、R3和R5独立地选自H,直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或者被直链或支化C1-C6烷基取代的甲硅烷基;R2、R4和R6独立地选自直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或者被直链或支化C1-C6烷基取代的甲硅烷基;R1R2N、R3R4N和R5R6N可以是环状仲胺,其独立地选自氮丙啶、氮杂环丁烷、哌啶、吡咯烷、吡咯、咪唑、吡唑、吲哚或所述环状仲胺的任何在碳上被取代的衍生物。当R1、R3或R5是H时,胺是伯胺。当R1、R3或R5是H,并且相应的R2、R4或R6独立地选自直链或支化的C3-C6烷基、直链或支化的C3-C8链烯基、直链或支化的C3-C8炔基、C6-C10芳基、直链或支化的C3-C6烷基醚、甲硅烷基、三甲基甲硅烷基、或者被直链或支化C3-C6烷基取代的甲硅烷基,环状仲胺包括氮丙啶、氮杂环丁烷、哌啶、吡咯烷、吡咯、咪唑、吡唑、吲哚或环状仲胺的任何在碳上被取代的衍生物,可以避免多重取代。
现有技术已经描述了在所述通式结构范围内的化合物。所有这些化合物从本发明权利要求的化合物中排除。排除以下在W.M.Scantlin和A.D.Norman Inorganic Chemistry,第11卷,第12期,3082-3084,1972中描述的化合物:[(SiH3)2N]2SiH2。
一种制备下式化合物的方法:
其中n=1-3;m=0-3;k=0-3;R1、R3和R5独立地选自H,直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或者被直链或支化C1-C6烷基取代的甲硅烷基;R2、R4和R6独立地选自直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或者被直链或支化C1-C6烷基取代的甲硅烷基;R1R2N、R3R4N和R5R6N可以是环状仲胺,其独立地选自氮丙啶、氮杂环丁烷、哌啶、吡咯烷、吡咯、咪唑、吡唑、吲哚或所述环状仲胺的任何在碳上被取代的衍生物。当R1、R3或R5是H,胺是伯胺。当R1、R3或R5是H,并且相应的R2、R4或R6独立地选自直链或支化的C3-C6烷基、直链或支化的C3-C8链烯基、直链或支化的C3-C8炔基、C6-C10芳基、直链或支化的C3-C6烷基醚、甲硅烷基、三甲基甲硅烷基、或者被直链或支化C3-C6烷基取代的甲硅烷基,环状仲胺包括氮丙啶、氮杂环丁烷、哌啶、吡咯烷、吡咯、咪唑、吡唑、吲哚或环状仲胺的任何在碳上被取代的衍生物,可以避免多重取代;
所述方法包括:
a)使得反应物TSA和nR1R2NH和mR3R4NH和kR5R6NH在过渡金属催化剂的存在下接触以形成反应混合物;
b)任选地将溶剂加入反应混合物;
c)使得反应混合物保持在约0-250℃的温度下;
d)进行反应以形成(R1R2N)n(R3R4N)m(R5R6N)k(NSi3H(9-n–m-k));
e)从反应混合物分离(R1R2N)n(R3R4N)m(R5R6N)k(NSi3H(9-n–m-k));
其中反应混合物的温度可以在合成期间变化,并且使得反应混合物的温度保持不会低于约0℃并且不超过约250℃。
一种制备下式化合物的方法:
(R1R2N)n(R3R4N)k(R5R6N)m(NSi6H(15-n-m-k))
其中n=1-3;m=0-3;k=0-3;R1、R3和R5独立地选自H,直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或者被直链或支化C1-C6烷基取代的甲硅烷基;R2、R4和R6独立地选自直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或者被直链或支化C1-C6烷基取代的甲硅烷基;R1R2N、R3R4N和R5R6N可以是环状仲胺,其包括氮丙啶、氮杂环丁烷、哌啶、吡咯烷、吡咯、咪唑、吡唑、吲哚或所述环状仲胺的任何在碳上被取代的衍生物,
此方法包括:
a)使得反应物TDSA和nR1R2NH和mR3R4NH和kR5R6NH在过渡金属催化剂的存在下接触以形成反应混合物;
b)任选地将溶剂加入反应混合物;
c)使得反应混合物保持在约0-250℃的温度下;
d)进行反应以形成(R1R2N)n(R3R4N)k(R5R6N)m(NSi6H(15-n-m-k));
e)将产物(R1R2N)n(R3R4N)k(R5R6N)m(NSi6H(15-n-m-k))从反应混合物分离出来;
其中反应温度可以在合成期间变化,并且使得反应混合物的温度保持不会低于约0℃并且不超过约250℃。
一种制备下式化合物的方法:
其中R1、R2独立地选自直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或者被直链或支化C1-C6烷基取代的甲硅烷基;R1R2N可以是环状仲胺,其选自氮丙啶、氮杂环丁烷、哌啶、吡咯烷、吡咯、咪唑、吡唑、吲哚或所述环状仲胺的任何在碳上被取代的衍生物;R3、R4和R5独立地选自H和以下基团:直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或者被直链或支化C1-C6烷基取代的甲硅烷基,环状仲胺,其选自氮丙啶、氮杂环丁烷、哌啶、吡咯烷、吡咯、咪唑、吡唑、吲哚或所述环状仲胺的任何在碳上被取代的衍生物,其中R选自直链或支化的C1-C6烷基、直链或支化的C1-C8链烯基、直链或支化的C1-C8炔基、C6-C10芳基、直链或支化的C1-C6烷基醚,
a)使得反应物N[(SiH2R3)(SiH2R4)(SiH2R5)和HNR1R2在过渡金属催化剂的存在下接触以形成反应混合物;
b)任选地将溶剂加入反应混合物;
c)使得反应混合物保持在约0-250℃的温度下;
d)进行反应以形成N[(SiH2R3)(SiH2R4)(SiHR5NR1R2)];
e)从反应混合物分离产物N[(SiH2R3)(SiH2R4)(SiHR5NR1R2)];
其中反应混合物的温度可以在合成期间变化,并且使得反应混合物的温度保持不会低于约0℃并且不超过约250℃。
对于R1和R2=乙基;R3,R4和R5=H的样品结构如下:
一种制备下式化合物的方法:
a)使得反应物TSA和HN(CH2CH3)2在过渡金属催化剂的存在下接触以形成反应混合物;
b)任选地将溶剂加入反应混合物;
c)使得反应混合物保持在约0-250℃的温度下;
d)进行反应以形成H8Si3N(CH2CH3)2;
e)从反应混合物分离H8Si3N(CH2CH3)2;
其中反应温度可以在合成期间变化,并且使得反应混合物的温度保持不会低于约0℃并且不超过约250℃。
在本文中,术语“不含氯、不含卤素、不含氨基氯和不含氨基卤素”用于定义含有小于5ppm卤素、优选小于3ppm卤素和更优选小于1ppm卤素的化合物。术语“卤素”和“卤化物”包括氟、氯、溴和碘。在本发明中获得不含卤素的产物,因为本发明的起始反应物、催化剂和任选的溶剂是不含卤素的。术语“氨基卤化物”和“氨基卤素”表示任何胺,包括、但不限于氨,以及与卤素关联的有机胺。这种关联可以是盐、络合物或化学键。术语“反应容器”和“反应器”表示相同的设备,其具有相同的含义,并可以在本文中互换使用。反应器可以是用于间歇合成的容器,或是流通式容器以促进连续合成。术语“反应混合物”表示反应物、催化剂和任选溶剂的组合物,它们进行反应以形成产物。在本文和权利要求中使用的术语“不含卤化物的”和“不含卤素的”表示来自所有来源的卤素的存在水平,例如但不限于卤离子、键接的卤素和氨基卤素。
以下方法描述氨基-三甲硅烷基胺的合成,包括:
a)使得胺和TSA反应物在过渡金属催化剂的存在下接触以形成反应混合物;
b)任选地将溶剂加入反应混合物;
c)使得反应混合物保持在约0-250℃的温度下;
d)进行反应以形成产物;
e)从反应混合物分离产物。
本文使用的术语“保持在…的温度下”表示按照需要加热或冷却以获得在规定的最小和最大温度范围内的温度。向反应容器添加胺和硅烷的顺序可以是先加入胺,或者先加入硅烷。当原料是不含卤素的,产物也将是不含卤素和不含氨基卤素的。
适用于本发明的多相催化剂包括过渡金属催化剂和稀土元素。催化剂是选自下组:Sc,Ti,V,Cr,Mn,Fe,Co,Ni,Cu,Zn,Y,Zr,Nb,Mo,Tc,Ru,Rh,Pd,Ag,Cd,La,Hf,Ta,W,Re,Os,Ir,Pt,Au,Hg,Yb和U。优选的催化剂是选自Ru,Pd,Rh,Ir,Fe,Ni,Pt,Cr,Cu和Au。更优选的催化剂是选自Rh,Pd,Ru和Pt。最优选的催化剂是Ru和负载于碳上的Ru。另外优选的催化剂是负载于MgO上的Pd。
本发明的催化剂优选固定在载体上。载体是具有高表面积的固体。典型的载体材料包括、但不限于:氧化铝,MgO,沸石,碳,整料堇青石,硅藻土,硅胶,氧化硅/氧化铝,ZrO和TiO2。优选的载体是碳、氧化铝、氧化硅和MgO。更优选的载体是碳。载体的BET表面积是在约1-3000m2/g的范围内。优选的范围是约100-2000m2/g。催化剂的金属载荷范围是约0.01-50重量%。优选的范围是约0.5-20重量%。更优选的范围是约0.5-10重量%。催化剂可以通过多种公知的方法活化。在真空下加热催化剂是优选的方法。催化剂可以在加入反应容器之前进行活化,或者在加入反应物之前在反应容器中进行活化。
催化剂可以包含助催化剂。助催化剂是这样的物质,它们本身不是催化剂,但是当少量与活性催化剂混合时能提高催化剂的效率(活性和/或选择性)。助催化剂通常是金属,例如Mn、Ce、Mo、Li、Re、Ga、Cu、Ru、Pd、Rh、Ir、Fe、Ni、Pt、Cr、Cu和Au,和/或它们的氧化物。它们可以单独地加入反应器容器中,或者它们可以是催化剂本身的一部分。例如,Ru/Mn/C(碳负载的钌,用锰助催化)或Pt/CeO2/Ir/SiO2(负载于二氧化硅上的铂,用氧化铈和铱助催化)。一些助催化剂可以本身用作催化剂,但是它们与主催化剂组合使用能改进主催化剂的活性。催化剂可以作为助催化剂用于其它催化剂。在这方面,催化剂可以称为双金属(或多金属)催化剂。例如,Ru/Rh/C可以称为碳负载的钌和铑双金属催化剂,或用铑助催化的碳负载钌。活性催化剂是能在特定化学反应中用作催化剂的物质。
催化剂可以需要活化,这通常在真空中或者在惰性气体或还原气体例如氢气或氦气中和在升高的温度下进行。通常,催化剂在约125℃和约-14psig(约1托)下进行活化。这里所用的动态真空表示约1托的真空。活化条件将根据所选择的催化剂而变化。用于活化各种催化剂的条件是本领域公知的。已活化的催化剂可以储存待用。
当在本发明中使用溶剂时,选择对反应物不具有反应性的溶剂。溶剂是无水的,并且不会钝化催化剂(中毒)。这些溶剂的非限制性例子包括:链烷,例如直链、支化或环状的C5-C20链烷以及它们的混合物;链烯,例如1-十八碳烯、环辛二烯和环己烯;氯代烷,例如二氯甲烷和二氯乙烷;芳烃,例如甲苯、二甲苯、1,3,5-三甲基苯和萘,以及杂环化合物,例如喹啉和吡啶,以及它们的混合物。优选的溶剂是正十八烷。优选,应当选择溶剂以使得其沸点与产物化合物的沸点相差约10℃。
用于本发明中的惰性气体在反应条件下不具有反应性。惰性气体的非限制性例子包括:氦气、氩气和氮气。优选的气体是氦气。
配备机械搅拌的帕尔(Parr)高压釜是合适的反应容器。对于合成单取代的三甲硅烷基胺和单取代的三-二甲硅烷基胺(tridisilylamine)而言,在反应开始时TSA或TDSA与胺之间的摩尔比率是在约0.5-5的范围内,优选约1-3。对于多取代的TSA和多取代的TDSA,在反应开始时TSA或TDSA与胺之间的摩尔比率是在约0.1-0.9的范围内。
术语“低温冷阱处理”表示在低温冷阱中冷凝气态物质。
实施例1-在加压反应器中通过三甲硅烷基胺(TSA)和二乙基胺在商购的负载于碳上的钌催化剂存在下反应合成二乙基氨基甲硅烷基-双-二甲硅烷基胺:
在配备机械搅拌器、热电偶、压力表、压力转换器和3个计量阀的0.3L高压釜中加入5.3g(0.0025mmol的钌)的负载于碳上的5重量%钌催化剂。然后将反应器在动态真空下于约125℃加热3小时。这里所述的动态真空表示约1托(Torr)的真空。在冷却到室温后,将14.8g(0.202mol)的二乙基胺加入反应器,然后在液氮浴中冷却到约-130℃。将40g(0.372mol)的三甲硅烷基胺转移到反应器中。然后将反应器逐步加热到约100℃。在约400rpm下搅拌65分钟后,压力增加约300psi。压力的增加是与氢气(和产物)的形成量成比例的,所以其将根据反应规模而变化。当压力停止增加时,此反应完成。可以希望在完全反应之前停止反应。将反应器冷却到室温(“RT”)。在SSLB中在液氮温度下在低温冷阱中收集挥发物。反应器压力降低到50托。
从反应容器回收1-二乙基氨基甲硅烷基-双-二甲硅烷基胺。
所得的溶液含有30%(11.3g)的二乙基氨基甲硅烷基-双-二甲硅烷基胺。未分离的产率是30%。
结构:二乙基氨基甲硅烷基-双-二甲硅烷基胺:
TSA胺化合物的通用合成:
a)胺取代的TSA化合物是在加压反应器中通过三甲硅烷基胺(TSA)和胺在过渡金属催化剂的催化下合成的:在配备机械搅拌器、热电偶、压力表和压力转换器以及3个计量阀的高压釜或相似加压反应器容器中加入过渡金属催化剂。然后将反应器在动态真空下于约125℃加热3小时以活化催化剂。催化剂可以在加入反应容器之前或在加入反应物之前在反应容器中进行活化。如果催化剂在加入反应容器之前活化,则可以省略在动态真空下于约125℃加热3小时以活化催化剂的预先加热步骤。在冷却到室温之后,将胺加入反应器,然后在液氮浴中冷却到-130℃。将合适量的三甲硅烷基胺转移到反应器。使得反应器温度保持不低于0℃且不超过250℃。在搅拌约5分钟至约2天的情况下,反应器压力增加直到反应完全。压力的增加是与氢气(和产物)的形成量成比例的。所以,反应器压力将根据反应规模、每种反应物的量、反应和反应器尺寸而变化。当压力停止增加时,此反应完成。在反应完成之后,将反应器冷却到RT。在SSLB中在液氮温度下在低温冷阱中收集挥发物,并且反应器压力降低到约40-100托。
为了制备单取代的TSA/胺化合物,TSA/胺的摩尔比率是约0.5-5,更优选是约1-3。为了制备多取代的TSA/胺化合物,TSA/胺的摩尔比率是约0.1-0.9。此比率越低,将出现在TSA化合物上胺取代程度就越大。
优选用于合成TSA/胺化合物的催化剂是选自Ru、Pd、Rh、Ir、Fe、Ni、Pt、Cr、Cu和Au。最优选的催化剂是钌。
TDSA胺化合物的通用合成:
a)胺取代的TDSA化合物是在加压反应器中通过三-二甲硅烷基胺(TDSA)和胺在过渡金属催化剂的催化下合成的:在配备机械搅拌器、热电偶、压力表和压力转换器以及3个计量阀的高压釜或相似加压反应器容器中加入过渡金属催化剂。然后将反应器在动态真空下于约125℃加热3小时以活化催化剂。催化剂可以在加入反应容器之前或在加入反应物之前在反应容器中进行活化。如果催化剂在加入反应容器之前活化,则可以省略在动态真空下于约125℃加热3小时以活化催化剂的预先加热步骤。在冷却到室温之后,将胺加入反应器,然后在液氮浴中冷却到-130℃。将合适量的三甲硅烷基胺转移到反应器。使得反应器温度保持不低于0℃且不超过250℃。在搅拌约5分钟至约2天的情况下,反应器压力增加直到反应完全。压力的增加是与氢气(和产物)的形成量成比例的。所以,反应器压力将根据反应规模、每种反应物的量、反应和反应器尺寸而变化。当压力停止增加时,此反应完成。在反应完成之后,将反应器冷却到RT。在SSLB中在液氮温度下在低温冷阱中收集挥发物,并且反应器压力降低到约40-100托。
为了制备单取代的TDSA/胺化合物,TDSA/胺的摩尔比率是约0.5-5,更优选是约1-3。为了制备多取代的TDSA/胺化合物,TDSA/胺的摩尔比率是约0.1-0.9。此比率越低,将出现在TDSA化合物上的胺取代程度就越大。
优选用于合成TDSA/胺化合物的催化剂是选自Ru、Pd、Rh、Ir、Fe、Ni、Pt、Cr、Cu和Au。最优选的催化剂是钌。
术语“未分离的产率”表示此产率是通过称量反应粗产物并通过其色谱估算产物量检测的。术语“经分离的产率”表示产物经过提纯并称重,百分比产率是通过占理论值的重量百分比表示的。
本发明的氨基三甲硅烷基胺和氨基三-二甲硅烷基胺作为前体用于气相沉积方法。本文公开了使用本发明前体进行气相沉积方法的方法。本发明方法提供了所述前体用于沉积含有硅的膜的用途。本发明方法可以用于生产半导体、光伏电池、LCD-TFT或平板型装置。此方法包括:将本发明前体的蒸气引入其中放置至少一个基材的反应器中,并且采用气相沉积方法将至少一部分本发明前体沉积到基材上以形成含Si的层。
本发明方法也提供使用气相沉积方法在基材上形成含双金属的层,更尤其用于沉积SiMNx和SiMOx膜,其中x是0-4,和SiMOxNy膜,其中x+y是0-4,并且M是选自以下的金属:Ta,Hf,Zr,Ti,Ni,Mn,Ge,B,Nb,Mg,Al,Sr,Y,Ba,Ca,As,Sb,Bi,Sn,Pb,Co,镧系元素(例如Er),或它们的组合。一般SiMOx、SiMOx或SiMOxNy的技术包括各种相应浓度的Si和M,并且Si/(Si+M)是约5-95%。
本发明的在基材上形成含硅层的方法可以用于生产半导体、光伏电池、LCD-TFT或平板型装置。本发明的前体可以使用本领域公知的任何气相沉积方法沉积含有Si的膜。合适的气相沉积方法的例子包括化学气相沉积(CVD)或原子层沉积(ALD)。示例性的CVD方法包括热CVD,等离子体改进CVD(PECVD),脉冲CVD(PCVD),低压CVD(LPCVD),低于大气压CVD(SACVD)或大气压CVD(APCVD),热导线CVD(HWCVD,也称为cat-CVD,其中热导线用作沉积工艺的能源,远程等离子体CVD(RP-CVD),UV辅助型CVD,可流动的CVD(FCVD)),自由基引入型CVD,以及它们的组合。示例性的ALD方法包括热ALD,等离子体改进的ALD(PEALD),空间分离ALD,热导线ALD(HWALD),自由基引入型ALD,UV辅助型ALD,以及它们的组合。也可以使用超临界流体沉积。本发明方法也可以用于可流动性PECVD沉积方法中,参见美国专利公开No.2014/0051264和AppliedMaterials,Inc.,将它们的内容引入本文供参考。沉积方法优选是ALD,空间ALD,PE-ALD,或可流动性CVD(F-CVD)。
将前体的蒸气引入装有至少一个基材的反应室中。在反应室中的温度和压力以及基材的温度保持在适合至少一部分前体气相沉积到基材上的条件下。换句话说,在将气化的前体引入反应室之后,在反应室内的条件使得至少一部分的气化前体沉积到基材上以形成含硅的膜。也可以使用共反应剂以帮助形成含Si的层。共反应剂可以与前体同时引入或分开地依次引入,并选自O2,O3,O自由基和离子,NO,N2O,H2O,H2O2,CO2,CO,羧酸,福尔马林,醇,二醇,NH3,肼(取代或未取代的,例如UDMH,叔丁基肼),胺(例如DMA,TMA,DEA,TEA,TB,NH2),二胺,N自由基和离子,H2,以及它们的混合物。
反应室可以是任何装置的用于发生沉积的闭合空间或小室,例如但不限于平行板式反应器,冷壁型反应器,热壁型反应器,单晶片式反应器,多晶片式反应器,或其它这些类型的沉积系统,例如空间ALD室、辊-辊ALD室。所有这些示例的反应室能用作ALD反应室。反应室可以保持在约1毫托至约760托的压力下。另外,反应室内的温度可以是约20-600℃。本领域技术人员能理解,温度可以通过经验优化以达到所需效果。
反应器的温度可以通过控制基材夹具的温度、控制反应器壁的温度、或控制基材本身的温度来控制。用于加热基材的装置是本领域公知的。反应器壁被加热到足够的温度以在足够的生长速率和所需的物理状态和组成下获得所需的膜。反应器壁的加热温度的非限制性示例范围包括约20-600℃。当使用等离子体沉积方法时,沉积温度可以是约20-550℃。或者,当进行加热方法时,沉积温度可以是约200-600℃。
或者,可以将基材加热到足够的温度以在足够的生长速率和所需的物理状态和组成下获得所需的膜。基材加热温度的非限制性示例范围包括150-600℃。优选,基材的温度保持低于或等于500℃。
用于沉积含硅膜的基材的类型将根据最终用途而变化。基材通常定义为在其上进行此工艺的材料。基材可以是任何适合用于半导体、光伏电池、平板或LCD-TFT装置制造中的基材。合适的基材的例子包括晶片,例如硅、二氧化硅、玻璃、Ge或GaAs晶片。晶片上可以具有在先前制造步骤中沉积的不同材料的一层或多层。例如,晶片可以包括硅层(结晶,无定形,多孔的,等等),氧化硅层,氮化硅层,氧氮化硅层,碳掺杂的氧化硅(SiCOH)层,多孔的碳掺杂氧化硅层,碳氮化硅,氢化碳化硅,或它们的组合。另外,晶片可以包括铜层、钨层或金属层(例如铂、钯、镍、铑、金、钴、锗、锑、铽、锡、钌和它们的合金)。晶片可以包括阻隔层,例如锰,氧化锰,Ta、W、Ti、V、Zr、Hg、Nb、Mo、Mn和Ru的氮化物。氮化物可以是碳掺杂的氮化物。也可以使用塑料层,例如(3,4-亚乙基二氧基噻吩)聚(苯乙烯磺酸盐)[PEDOT:PSS]。膜可以沉积在有机膜上,例如光蚀刻层、无定形碳层或聚酰亚胺膜。这些层可以是平面或图形化的。在一些实施方案中,基材可以包括氧化物层,其作为介电材料用于MIM、DRAM、RERAM、相变RAM或FeRam技术(例如Zr,Hg,Ti,Nb,Mo,Al,Ta,镧系元素,稀土元素,和它们的混合三元或二元氧化物)中,或来自基于氮化物的膜(例如TaN),这种膜用作在铜和低-k层之间的粘合阻隔剂。本发明方法可以在晶片上直接沉积含硅层,或在晶片顶部上的一层或多于一层(当带图案的层形成基材时)上直接沉积含硅层。此外,本领域技术人员将理解,本文所用的术语“膜”或“层”表示在表面上铺展或排布的一定厚度的材料,并且此表面可以具有3D图案或微结构,例如孔和沟槽或线。沉积可以对于基材上的特定区域具有选择性,或对于特定的暴露材料具有选择性。例如,可以在被自校准单层(“SAM”)覆盖的基材的特定部分上抑制生长。在本说明书和权利要求中,晶片和在其上的任何相关层称为基材。
本发明的前体可以以纯形式或与合适溶剂的混合物形式提供,溶剂例如是甲苯、乙基苯、二甲苯、1,3,5-三甲基苯、癸烷、十二烷、辛烷、己烷、戊烷、叔胺、四氢呋喃、乙基甲基酮、十氢化萘等。本发明的前体可以以各种浓度存在于溶剂中。例如,所得的浓度可以在约0.05-2M的范围内。
将纯前体或混合的前体以蒸气形式通过常规装置引入反应器中,例如管道和/或流量计。蒸气形式的前体可以通过将纯前体或混合的前体溶液经由常规蒸发步骤蒸发制备,例如鼓泡、蒸气抽取,或通过使用升华器,例如参见Xu等的PCT出版物WO2009/087609。纯前体或混合的前体可以以液态加入蒸发器中,在这里在被引入反应器(直接液体注射)之前进行蒸发。若存在的话,载气可以包括但不限于Ar,He,N2,或H2,以及它们的混合物。载气和前体然后作为蒸气被引入反应器中。
如果必要的话,可以将容器加热到允许前体处于其液相或固相并具有充足蒸气压力的温度。容器可以保持在例如0-150℃范围内的温度。本领域技术人员能够理解,容器的温度可以按照公知方式调节以控制被蒸发的前体的蒸气压和在加工室内的浓度。
通过气相沉积方法获得的膜可以通过各种方法进一步处理,例如退火、反应性退火、UV固化、电子束固化和径向退火。膜的组成和结构可以受此步骤的显著影响。
应当理解的是,本领域技术人员可以在本发明权利要求表述的原则和范围内对于本文公开的示例性描述和说明在细节、材料、步骤和部件排布方面实施许多其它变化。因此,本发明不限于在以上实施例和/或附图中给出的具体实施方案。
虽然以上描述了许多细节,但是这些并不限制本发明范围,而是仅仅提供对于本发明一些优选实施方案的说明。在此范围内可以有各种其它实施方案和分支。应当理解的是,本领域技术人员可以在本发明权利要求表述的原则和范围内对于本文公开的示例性描述和说明在细节、材料、步骤和部件排布方面实施许多其它变化。
Claims (17)
1.一种具有下式的化合物:
其中n=1-3;m=0-3;k=0-3;R1、R3和R5独立地选自H,直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或被直链或支化C1-C6烷基取代的甲硅烷基;R2、R4和R6独立地选自直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或被直链或支化C1-C6烷基取代的甲硅烷基;R1R2N、R3R4N和R5R6NR1R2N、R3R4N和R5R6N可以是独立地选自以下的环状仲胺:氮丙啶、氮杂环丁烷、哌啶、吡咯烷、吡咯、咪唑、吡唑、吲哚或所述环状仲胺的任何在碳上被取代的衍生物,并且不包括具有式C18H48N4Si3、C15H41N3Si3、C6H21NSi3和C7H23NSi3的化合物,所述化合物不包括公知化合物:[(SiH3)2N]2SiH2。
2.具有下式的化合物:
其中n=1-3;m=0-3;k=0-3;R1、R3和R5独立地选自H,直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或者被直链或支化C1-C6烷基取代的甲硅烷基;R2、R4和R6独立地选自直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或者被直链或支化C1-C6烷基取代的甲硅烷基;R1R2N、R3R4N和R5R6N R1R2N、R3R4N和R5R6N可以是独立地选自以下的环状仲胺:氮丙啶、氮杂环丁烷、哌啶、吡咯烷、吡咯、咪唑、吡唑、吲哚或所述环状仲胺的任何在碳上被取代的衍生物。
3.具有下式的化合物:
其中,R1、R2独立地选自直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或者被直链或支化C1-C6烷基取代的甲硅烷基;R3、R4和R5独立地选自H,直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或者被直链或支化的C1-C6烷基取代的甲硅烷基,选自氮丙啶、氮杂环丁烷、哌啶、吡咯烷、吡咯、咪唑、吡唑、吲哚的环状仲胺或所述环状仲胺的任何在碳上被取代的衍生物,R1R2N可以是选自以下的环状仲胺:氮丙啶、氮杂环丁烷、哌啶、吡咯烷、吡咯、咪唑、吡唑、吲哚或所述环状仲胺的任何在碳上被取代的衍生物,其中R选自直链或支化的C1-C6烷基、直链或支化的C1-C8链烯基、直链或支化的C1-C8炔基、C6-C10芳基、直链或支化的C1-C6烷基醚。
4.权利要求3的化合物,其具有下式:
其中R1和R2=乙基;R3、R4和R5=H。
5.权利要求3的化合物,其中R1、R2独立地选自H,甲基,乙基,异丙基和叔丁基;或NR1R2是具有3-8个碳原子的环状饱和或不饱和的环状胺,当R1是H时,R2不是甲基或乙基。
6.权利要求3的化合物,其中R1、R2是乙基。
7.一种制备根据权利要求1的化合物的方法,包括:
a)使得反应物TSA和(R1R2NH)n和(R3R4NH)m和(R5R6NH)k在过渡金属催化剂的存在下接触以形成反应混合物;
b)任选地将溶剂加入反应混合物;
c)使得反应混合物保持在约0-250℃的温度下;
d)进行反应以形成(R1R2N)n(R3R4N)m(R5R6N)k(NSi3H(9-n–m-k));
e)从反应混合物分离(R1R2N)n(R3R4N)m(R5R6N)k(NSi3H(9-n–m-k));
其中反应混合物的温度可以在合成期间变化,并且使得反应混合物的温度保持不会低于约0℃且不超过约250℃。
8.权利要求5的方法,其中催化剂选自Ru、Pd、Rh、Ir、Fe、Ni、Pt、Cr、Cu和Au。
9.一种制备根据权利要求2的化合物的方法,包括:
a)使得反应物TDSA和(R1R2NH)n和(R3R4NH)m和(R5R6NH)k在过渡金属催化剂的存在下接触以形成反应混合物;
b)任选地将溶剂加入反应混合物;
c)使得反应混合物保持在约0-250℃的温度下;
d)进行反应以形成(R1R2N)n(R3R4N)k(R5R6N)m(Nsi6H8H(3-k)H(3-m);
e)将产物(R1R2N)n(R3R4N)k(R5R6N)m(NSi3H8H(3-k)H(3-m)从反应混合物分离;
其中反应温度可以在合成期间变化,并且使得反应混合物的温度保持不会低于约0℃且不超过约250℃。
10.权利要求7的方法,其中催化剂选自Ru、Pd、Rh、Ir、Fe、Ni、Pt、Cr、Cu和Au。
11.一种制备根据权利要求3的化合物的方法,包括:
a)使得反应物N[(SiH2R3)(SiH2R4)(SiH2R5)]和HNR1R2在过渡金属催化剂的存在下接触以形成反应混合物;
b)任选地将溶剂加入反应混合物;
c)使得反应混合物保持在约0-250℃的温度下;
d)进行反应以形成N[(SiH2R3)(SiH2R4)(SiHR5NR1R2)];
e)从反应混合物分离产物N[(SiH2R3)(SiH2R4)(SiHR5NR1R2)];
其中反应混合物的温度可以在合成期间变化,并且使得反应混合物的温度保持不会低于约0℃且不超过约250℃。
12.权利要求9的方法,其中催化剂选自Ru、Pd、Rh、Ir、Fe、Ni、Pt、Cr、Cu和Au。
13.不含卤素的具有下式的化合物:
其中n=1-3;m=0-3;k=0-3;R1、R3和R5独立地选自H,直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或者被直链或支化C1-C6烷基取代的甲硅烷基;R2、R4和R6独立地选自直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或者被直链或支化C1-C6烷基取代的甲硅烷基;R1R2N、R3R4N和R5R6N R1R2N、R3R4N和R5R6N可以是独立地选自以下的环状仲胺:氮丙啶、氮杂环丁烷、哌啶、吡咯烷、吡咯、咪唑、吡唑、吲哚或所述环状仲胺的任何在碳上被取代的衍生物,其中卤素的可检测量小于5ppm,并且不包括具有式C18H48N4Si3、C15H41N3Si3、C6H21NSi3和C7H23NSi3的化合物,其中卤素的可检测量小于5ppm。
14.不含卤素的具有下式的化合物:
其中n=1-3;m=0-3;k=0-3;R1、R3和R5独立地选自H,直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或者被直链或支化C1-C6烷基取代的甲硅烷基;R2、R4和R6独立地选自直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或者被直链或支化C1-C6烷基取代的甲硅烷基;R1R2N、R3R4N和R5R6N R1R2N、R3R4N和R5R6N可以是独立地选自以下的环状仲胺:氮丙啶、氮杂环丁烷、哌啶、吡咯烷、吡咯、咪唑、吡唑、吲哚或所述环状仲胺的任何在碳上被取代的衍生物,和其中卤素的可检测量小于5ppm。
15.不含卤素的具有下式的化合物:
其中R1、R2独立地选自直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或者被直链或支化C1-C6烷基取代的甲硅烷基;R1R2N可以是选自以下的环状仲胺:氮丙啶、氮杂环丁烷、哌啶、吡咯烷、吡咯、咪唑、吡唑、吲哚或所述环状仲胺的任何在碳上被取代的衍生物;R3、R4和R5独立地选自H和以下基团:直链或支化的C1-C6烷基,直链或支化的C1-C8链烯基,直链或支化的C1-C8炔基,C6-C10芳基,直链或支化的C1-C6烷基醚,甲硅烷基,三甲基甲硅烷基,或者被直链或支化C1-C6烷基取代的甲硅烷基;环状仲胺,其选自氮丙啶、氮杂环丁烷、哌啶、吡咯烷、吡咯、咪唑、吡唑、吲哚或环状仲胺的任何在碳上被取代的衍生物;其中卤素的可检测量小于5ppm。
16.一种通过气相沉积方式沉积含硅薄膜的方法,其中前体化合物是选自权利要求1、2、3和4的化合物以及[(SiH3)2N]2SiH2。
17.权利要求14的方法,其中气相沉积方法是选自ALD、PEALD或FCVD。
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