JP2016537305A - アミン置換トリシリルアミン化合物及びトリジシリルアミン化合物 - Google Patents
アミン置換トリシリルアミン化合物及びトリジシリルアミン化合物 Download PDFInfo
- Publication number
- JP2016537305A JP2016537305A JP2016517387A JP2016517387A JP2016537305A JP 2016537305 A JP2016537305 A JP 2016537305A JP 2016517387 A JP2016517387 A JP 2016517387A JP 2016517387 A JP2016517387 A JP 2016517387A JP 2016537305 A JP2016537305 A JP 2016537305A
- Authority
- JP
- Japan
- Prior art keywords
- branched
- linear
- alkyl
- group
- silyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 35
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical class [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 title abstract description 24
- 239000003054 catalyst Substances 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 39
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 17
- 150000003624 transition metals Chemical class 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims abstract description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims description 68
- -1 cyclic secondary amine Chemical class 0.000 claims description 57
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 claims description 48
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 48
- 239000011541 reaction mixture Substances 0.000 claims description 43
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 claims description 42
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 claims description 32
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 30
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 claims description 29
- 125000003342 alkenyl group Chemical group 0.000 claims description 27
- 125000003118 aryl group Chemical group 0.000 claims description 27
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 24
- 229910052736 halogen Inorganic materials 0.000 claims description 23
- 125000004650 C1-C8 alkynyl group Chemical group 0.000 claims description 22
- 239000002243 precursor Substances 0.000 claims description 21
- 239000002904 solvent Substances 0.000 claims description 20
- 150000002367 halogens Chemical class 0.000 claims description 19
- 239000000376 reactant Substances 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 238000003786 synthesis reaction Methods 0.000 claims description 17
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 claims description 16
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 claims description 16
- HONIICLYMWZJFZ-UHFFFAOYSA-N azetidine Chemical compound C1CNC1 HONIICLYMWZJFZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052707 ruthenium Inorganic materials 0.000 claims description 16
- PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 claims description 15
- RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052703 rhodium Inorganic materials 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 229910052763 palladium Inorganic materials 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 229910052741 iridium Inorganic materials 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 238000007740 vapor deposition Methods 0.000 claims description 7
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 6
- 150000003335 secondary amines Chemical class 0.000 claims description 5
- 125000004122 cyclic group Chemical group 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 150000002475 indoles Chemical class 0.000 claims description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 2
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 claims description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims 1
- 150000001412 amines Chemical class 0.000 abstract description 24
- 238000000231 atomic layer deposition Methods 0.000 abstract description 16
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052799 carbon Inorganic materials 0.000 abstract description 6
- 229910007991 Si-N Inorganic materials 0.000 abstract description 4
- 229910006294 Si—N Inorganic materials 0.000 abstract description 4
- 238000013459 approach Methods 0.000 abstract description 2
- 230000003197 catalytic effect Effects 0.000 abstract description 2
- 150000004820 halides Chemical class 0.000 abstract description 2
- 239000002638 heterogeneous catalyst Substances 0.000 abstract description 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 239000002815 homogeneous catalyst Substances 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 238000000427 thin-film deposition Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 26
- 239000000758 substrate Substances 0.000 description 25
- 239000000047 product Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 239000010948 rhodium Substances 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000011572 manganese Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 229910052748 manganese Inorganic materials 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 150000003254 radicals Chemical class 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- 241001168730 Simo Species 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 3
- 125000000304 alkynyl group Chemical group 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 3
- 230000009969 flowable effect Effects 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 238000004050 hot filament vapor deposition Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 0 *C*N(*)C(*)(*)* Chemical compound *C*N(*)C(*)(*)* 0.000 description 2
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NCVIBEQAQZDHNC-UHFFFAOYSA-N N[SiH2]N([SiH3])[SiH3] Chemical compound N[SiH2]N([SiH3])[SiH3] NCVIBEQAQZDHNC-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 2
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadec-1-ene Chemical compound CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 2
- RZJRJXONCZWCBN-UHFFFAOYSA-N octadecane Chemical group CCCCCCCCCCCCCCCCCC RZJRJXONCZWCBN-UHFFFAOYSA-N 0.000 description 2
- 125000002924 primary amino group Chemical class [H]N([H])* 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- RRKODOZNUZCUBN-CCAGOZQPSA-N (1z,3z)-cycloocta-1,3-diene Chemical compound C1CC\C=C/C=C\C1 RRKODOZNUZCUBN-CCAGOZQPSA-N 0.000 description 1
- RHUYHJGZWVXEHW-UHFFFAOYSA-N 1,1-Dimethyhydrazine Chemical compound CN(C)N RHUYHJGZWVXEHW-UHFFFAOYSA-N 0.000 description 1
- GVNVAWHJIKLAGL-UHFFFAOYSA-N 2-(cyclohexen-1-yl)cyclohexan-1-one Chemical compound O=C1CCCCC1C1=CCCCC1 GVNVAWHJIKLAGL-UHFFFAOYSA-N 0.000 description 1
- 125000004974 2-butenyl group Chemical group C(C=CC)* 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 241001120493 Arene Species 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 101150065749 Churc1 gene Proteins 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000005909 Kieselgur Substances 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 102100038239 Protein Churchill Human genes 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- SMWDFEZZVXVKRB-UHFFFAOYSA-N anhydrous quinoline Natural products N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 150000001539 azetidines Chemical class 0.000 description 1
- 150000001541 aziridines Chemical class 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 150000001924 cycloalkanes Chemical class 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical compound CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006704 dehydrohalogenation reaction Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001227 electron beam curing Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000004491 isohexyl group Chemical group C(CCC(C)C)* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 239000012038 nucleophile Substances 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 150000003053 piperidines Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000003217 pyrazoles Chemical class 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 150000003235 pyrrolidines Chemical class 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/025—Silicon compounds without C-silicon linkages
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
- B01J23/24—Chromium, molybdenum or tungsten
- B01J23/26—Chromium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/40—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals of the platinum group metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/40—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals of the platinum group metals
- B01J23/46—Ruthenium, rhodium, osmium or iridium
- B01J23/462—Ruthenium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
- B01J31/16—Catalysts comprising hydrides, coordination complexes or organic compounds containing coordination complexes
- B01J31/1616—Coordination complexes, e.g. organometallic complexes, immobilised on an inorganic support, e.g. ship-in-a-bottle type catalysts
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/21—Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
- Catalysts (AREA)
Abstract
Description
は遷移金属触媒により触媒される。触媒は不均一であってもよいし、又は均一であってもよい。第二級アミンの一般反応を方程式1に示す。一般反応を方程式1に示す。方程式1の反応は発熱性である。反応は溶媒中で行ってもよいし、又は溶媒を使わずに行ってもよい。反応はバッチ式反応器又は連続流式反応器中で行うことができる。バッチ式反応器を使用した場合、反応器はクライオトラップに接続した凝縮器に取り付けてもよい(図2)。この集成装置では、反応が起こる際に形成された水素を排気することができる。圧力は凝縮器とクライオトラップとの間に取り付けた背圧制御弁により制御することができる。クライオトラップは、反応中及び/又は反応後に水素を系の外に送ることを可能とする排気ラインに接続してもよい。フィルターを有する浸漬管により容器からの生成物の取り出しが容易になる。
(式中、n=1〜3であり、m=0〜3であり、k=0〜3であり、R1、R3、及びR5は独立してH、直鎖若しくは分岐C1〜C6アルキル、直鎖若しくは分岐C1〜C8アルケニル、直鎖若しくは分岐C1〜C8アルキニル、C6〜C10アリール、直鎖若しくは分岐C1〜C6アルキルエーテル、シリル、トリメチルシリル、又は直鎖若しくは分岐C1〜C6アルキル置換シリルの群から選択され、R1R2N、R3R4N及びR5R6Nはアジリジン、アゼチジン、ピペリジン、ピロリジン、ピロール、イミダゾール、ピラゾール、インドールを含む環状第二級アミン又は該環状第二級アミンの任意のC置換誘導体とすることができ、R2、R4、及びR6は独立して直鎖若しくは分岐C1〜C6アルキル、直鎖若しくは分岐C1〜C8アルケニル、直鎖若しくは分岐C1〜C8アルキニル、C6〜C10アリール、直鎖若しくは分岐C1〜C6アルキルエーテル、シリル、トリメチルシリル、又は直鎖若しくは分岐C1〜C6アルキル置換シリル、アジリジン、アゼチジン、ピペリジン、ピロリジン、ピロール、イミダゾール、ピラゾール、インドールを含む環状第二級アミン又は該環状第二級アミンの任意のC置換誘導体の群から選択される)。
a)反応物TSA及びnR1R2NH及びmR3R4NH及びkR5R6NHを遷移金属触媒の存在下で接触させ、反応混合物を形成することと、
b)任意に上記反応混合物に溶媒を添加することと、
c)約0℃〜約250℃の温度に上記反応混合物を維持することと、
d)反応を進行させて、(R1R2N)n(R3R4N)m(R5R6N)k(NSi3H(9−n−m−k))を形成することと、
e)上記(R1R2N)n(R3R4N)m(R5R6N)k(NSi3H(9−n−m−k))を上記反応混合物から分離することと、
を含み、上記反応混合物の温度は合成中に変動し得るが、該反応混合物の温度が約0℃を下回らず、約250℃を超えないように維持される、方法。
(式中、n=1〜3であり、m=0〜3であり、k=0〜3であり、R1、R3、及びR5は独立してH、直鎖若しくは分岐C1〜C6アルキル、直鎖若しくは分岐C1〜C8アルケニル、直鎖若しくは分岐C1〜C8アルキニル、C6〜C10アリール、直鎖若しくは分岐C1〜C6アルキルエーテル、シリル、トリメチルシリル、又は直鎖若しくは分岐C1〜C6アルキル置換シリルの群から選択され、R2、R4、及びR6は独立して直鎖若しくは分岐C1〜C6アルキル、直鎖若しくは分岐C1〜C8アルケニル、直鎖若しくは分岐C1〜C8アルキニル、C6〜C10アリール、直鎖若しくは分岐C1〜C6アルキルエーテル、シリル、トリメチルシリル、又は直鎖若しくは分岐C1〜C6アルキル置換シリルの群から選択され、R1R2N、R3R4N及びR5R6Nは独立してアジリジン、アゼチジン、ピペリジン、ピロリジン、ピロール、イミダゾール、ピラゾール、インドールを含む環状第二級アミン又は該環状第二級アミンの任意のC置換誘導体とすることができる)を有する化合物を作製する方法であって、
a)反応物TDSA及びnR1R2NH及びmR3R4NH及びkR5R6NHを遷移金属触媒の存在下で接触させ、反応混合物を形成することと、
b)任意に上記反応混合物に溶媒を添加することと、
c)約0℃〜約250℃の温度に上記反応混合物を維持することと、
d)反応を進行させて、(R1R2N)n(R3R4N)k(R5R6N)m(NSi6H(15−n−m−k))を形成することと、
e)上記生成物(R1R2N)n(R3R4N)k(R5R6N)m(NSi6H(15−n−m−k))を上記反応混合物から分離することと、
を含み、上記反応の温度は合成中に変動し得るが、上記反応混合物の温度が約0℃を下回らず、約250℃を超えないように維持される、方法。
a)反応物N[(SiH2R3)(SiH2R4)(SiH2R5)]及びHNR1R2を遷移金属触媒の存在下で接触させ、反応混合物を形成することと、
b)任意に上記反応混合物に溶媒を添加することと、
c)約0℃〜約250℃の温度に上記反応混合物を維持することと、
d)反応を進行させて、N[(SiH2R3)(SiH2R4)(SiHR5NR1R2)]を形成することと、
e)上記生成物N[(SiH2R3)(SiH2R4)(SiHR5NR1R2)]を上記反応混合物から分離することと、
を含み、上記反応混合物の温度は合成中に変動し得るが、該反応混合物の温度が約0℃を下回らず、約250℃を超えないように維持される、方法。
a)反応物TSA及びHN(CH2CH3)2を遷移金属触媒の存在下で接触させ、反応混合物を形成することと、
b)任意に溶媒を反応混合物に添加することと、
c)反応混合物を約0℃〜約250℃の温度に維持することと、
d)反応を進行させ、H8Si3N(CH2CH3)2を形成することと、
e)H8Si3N(CH2CH3)2を反応混合物から分離することと、
を含み、反応温度は合成中に変動し得るが、反応混合物の温度が約0℃を下回らず、約250℃を超えないように維持される、方法。
a)アミン及びTSA反応物を遷移金属触媒の存在下で接触させ、反応混合物を形成することと、
b)任意に上記反応混合物に溶媒を添加することと、
c)約0℃〜約250℃の温度に上記反応混合物を維持することと、
d)反応を進行させて、生成物を形成することと、
e)上記生成物を上記反応混合物から分離することと、
を含むアミノ−トリシリルアミンの合成が示される。
リストとしては、ヘリウム、アルゴン及び窒素が挙げられる。好ましいガスはヘリウムである。
a)アミン置換TSA化合物は、加圧反応器中で遷移金属触媒により触媒されるトリシリルアミン(TSA)とアミンとの間の反応により合成される:機械撹拌器、熱電対、圧力計及び圧力変換器並びに3つの絞り弁を備えたオートクレーブ又は同様な加圧反応容器に遷移金属触媒を投入する。その後反応器を動的真空下で約125℃において3時間加熱し、触媒を活性化する。触媒を反応槽に添加する前に、又は反応槽中で反応物を添加する前
に活性化してもよい。触媒を反応槽に添加する前に活性化した場合は、触媒を活性化するための事前の約125℃、動的真空下での3時間の加熱工程を省く。室温に冷却後、アミンを反応器に添加し、引き続き反応器を液体窒素浴中で−130℃に冷却する。適切な量のトリシリルアミンを反応器に移す。反応器の温度を約0℃より下がらないように、また約250℃を超えないように維持する。約5分〜約2日撹拌することにより、反応器の圧力は反応が完了するまで増加する。圧力は形成される水素(及び生成物)の量に比例して増加する。したがって、反応器の圧力は各反応物の規模、量と、反応の規模、量と、反応器の大きさとによって異なってくる。反応は、圧力が増加しなくなった時に完了する。反応が完了した後、反応器をRTに冷却する。揮発性物質をSSLB中の液体窒素温度のクライオトラップ中で集め、反応器の圧力は約40Torr〜約100Torrに減少する。TSA/アミンモル比は、一置換TSA/アミン化合物を作製するために約0.5〜約5、より好ましくは約1〜約3である。TSA/アミンモル比は、多置換TSA/アミン化合物を作製するために約0.1〜約0.9である。比が小さければ小さいほど、TSA化合物におけるアミンの置換度は大きくなる。
a)アミン置換TDSA化合物は、加圧反応器中で遷移金属触媒により触媒されるトリジシリルアミン(TDSA)とアミンとの間の反応により合成される:機械撹拌器、熱電対、圧力計及び圧力変換器並びに3つの絞り弁を備えたオートクレーブ又は同様な加圧反応容器に遷移金属触媒を投入する。その後反応器を動的真空下で約125℃において3時間加熱し、触媒を活性化する。触媒を反応槽に添加する前に、又は反応槽中で反応物を添加する前に活性化してもよい。触媒を反応槽に添加する前に活性化した場合は、触媒を活性化するための事前の約125℃、動的真空下での3時間の加熱工程を省く。室温に冷却後、アミンを反応器に添加し、引き続き反応器を液体窒素浴中で−130℃に冷却する。適切な量のトリシリルアミンを反応器に移す。反応器の温度を約0℃より下がらないように、また約250℃を超えないように維持する。約5分〜約2日撹拌することにより、反応器の圧力は反応が完了するまで増加する。圧力は形成される水素(及び生成物)の量に比例して増加する。したがって、反応器の圧力は各反応物の規模、量と、反応の規模、量と、反応器の大きさとによって異なってくる。反応は、圧力が増加しなくなった時に完了する。反応が完了した後、反応器をRTに冷却する。揮発性物質をSSLB中の液体窒素温度のクライオトラップ中で集め、反応器の圧力は約40Torr〜約100Torrに減少する。TSA/アミンモル比は、一置換TDSA/アミン化合物を作製するために約0.5〜約5、より好ましくは約1〜約3である。TSA/アミンモル比は、多置換TDSA/アミン化合物を作製するために約0.1〜約0.9である。比が小さければ小さいほど、TDSA化合物におけるアミンの置換度は大きくなる。
して使用する。開示の前駆体を蒸着法に使用する方法を本明細書に開示する。開示の方法はケイ素含有膜の堆積への前駆体の使用をもたらす。開示の方法は半導体、光起電、LCD−TFT又はフラットパネル型のデバイスの製造に有用であり得る。この方法は、開示の前駆体の蒸気を少なくとも1つの基板が中に配置された反応器に導入することと、蒸着プロセスを用いて開示の前駆体の少なくとも一部を基板上に堆積させ、Si含有層を形成することと、を含む。
るために単なる実験により温度を最適化することができることが当業者に認識される。
Claims (17)
- 式:
- 式:
- 式:
分岐C1〜C6アルキルエーテル、シリル、トリメチルシリル、又は直鎖若しくは分岐C1〜C6アルキル置換シリル、アジリジン、アゼチジン、ピペリジン、ピロリジン、ピロール、イミダゾール、ピラゾール、インドールの群から選択される環状第二級アミン又は該環状第二級アミンの任意のC置換誘導体の群から選択され、R1R2Nはアジリジン、アゼチジン、ピペリジン、ピロリジン、ピロール、イミダゾール、ピラゾール、インドールの群から選択される環状第二級アミン又は該環状第二級アミンの任意のC置換誘導体とすることができ、ここでRは直鎖又は分岐C1〜C6アルキル、直鎖又は分岐C1〜C8アルケニル、直鎖又は分岐C1〜C8アルキニル、C6〜C10アリール、直鎖又は分岐C1〜C6アルキルエーテルの群から選択される)を有する化合物。 - 式:
- R1、R2が独立してH、メチル、エチル、イソプロピル、及びt−ブチルからなる群から選択されるか、又はR1がHであり、R2をメチル又はエチルとすることができない場合にNR1R2が炭素数3〜8の飽和環状アミン又は不飽和環状アミンである、請求項3に記載の化合物。
- R1、R2がエチルである、請求項3に記載の化合物。
- 請求項1に記載の化合物を作製する方法であって、
a)反応物TSA及び(R1R2NH)n及び(R3R4NH)m及び(R5R6NH)kを遷移金属触媒の存在下で接触させ、反応混合物を形成することと、
b)任意に前記反応混合物に溶媒を添加することと、
c)約0℃〜約250℃の温度に前記反応混合物を維持することと、
d)反応を進行させて、(R1R2N)n(R3R4N)m(R5R6N)k(NSi3H(9−n−m−k))を形成することと、
e)前記(R1R2N)n(R3R4N)m(R5R6N)k(NSi3H(9−n−m−k))を前記反応混合物から分離することと、
を含み、前記反応混合物の温度は合成中に変動し得るが、該反応混合物の温度が約0℃を下回らず、約250℃を超えないように維持される、方法。 - 前記触媒がRu、Pd、Rh、Ir、Fe、Ni、Pt、Cr、Cu及びAuからなる群から選択される、請求項5に記載の方法。
- 請求項2に記載の化合物を作製する方法であって、
a)反応物TDSA及び(R1R2NH)n及び(R3R4NH)m及び(R5R6NH)kを遷移金属触媒の存在下で接触させ、反応混合物を形成することと、
b)任意に前記反応混合物に溶媒を添加することと、
c)約0℃〜約250℃の温度に前記反応混合物を維持することと、
d)反応を進行させて、(R1R2N)n(R3R4N)k(R5R6N)m(NSi6H8H(3−k)H(3−m))を形成することと、
e)前記生成物(R1R2N)n(R3R4N)k(R5R6N)m(NSi3H8H(3−k)H(3−m))を前記反応混合物から分離することと、
を含み、前記反応の温度は合成中に変動し得るが、前記反応混合物の温度が約0℃を下回らず、約250℃を超えないように維持される、方法。 - 前記触媒がRu、Pd、Rh、Ir、Fe、Ni、Pt、Cr、Cu及びAuからなる群から選択される、請求項7に記載の方法。
- 請求項3に記載の化合物を作製する方法であって、
a)反応物N[(SiH2R3)(SiH2R4)(SiH2R5)]及びHNR1R2を遷移金属触媒の存在下で接触させ、反応混合物を形成することと、
b)任意に前記反応混合物に溶媒を添加することと、
c)約0℃〜約250℃の温度に前記反応混合物を維持することと、
d)反応を進行させて、N[(SiH2R3)(SiH2R4)(SiHR5NR1R2)]を形成することと、
e)前記生成物N[(SiH2R3)(SiH2R4)(SiHR5NR1R2)]を前記反応混合物から分離することと、
を含み、
前記反応混合物の温度は合成中に変動し得るが、該反応混合物の温度が約0℃を下回らず、約250℃を超えないように維持される、方法。 - 前記触媒がRu、Pd、Rh、Ir、Fe、Ni、Pt、Cr、Cu及びAuからなる群から選択される、請求項9に記載の方法。
- 式:
は分岐C1〜C8アルキニル、C6〜C10アリール、直鎖若しくは分岐C1〜C6アルキルエーテル、シリル、トリメチルシリル、又は直鎖若しくは分岐C1〜C6アルキル置換シリルの群から選択され、R1R2N、R3R4N及びR5R6NR1R2N、R3R4N及びR5R6Nは独立してアジリジン、アゼチジン、ピペリジン、ピロリジン、ピロール、イミダゾール、ピラゾール、インドールの群から選択される環状第二級アミン又は該環状第二級アミンの任意のC置換誘導体とすることができる)を有するハロゲン無含有化合物であって、ハロゲンの検出量が5ppm未満であり、C18H48N4Si3;C15H41N3Si3;C6H21NSi3及びC7H23NSi3の式を有する化合物が除外され、ハロゲンの検出量が5ppm未満である、化合物。 - ハロゲンの検出量が5ppm未満である、式:
- ハロゲンの検出量が5ppm未満である、式:
- 前駆体化合物が請求項1〜4のいずれか一項に記載の化合物及び[(SiH3)2N]2SiH2の群から選択される、Si含有薄膜を蒸着により堆積する方法。
- 前記気相成長法がALD、PEALD又はFCVDから選択される、請求項14に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361883452P | 2013-09-27 | 2013-09-27 | |
US61/883,452 | 2013-09-27 | ||
PCT/US2014/056618 WO2015047914A1 (en) | 2013-09-27 | 2014-09-19 | Amine substituted trisilylamine and tridisilylamine compounds |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016537305A true JP2016537305A (ja) | 2016-12-01 |
JP6500014B2 JP6500014B2 (ja) | 2019-04-10 |
Family
ID=52740773
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016517387A Active JP6500014B2 (ja) | 2013-09-27 | 2014-09-19 | 蒸着用前駆体およびその作製方法 |
JP2016517351A Active JP6529184B2 (ja) | 2013-09-27 | 2014-09-25 | 触媒脱水素カップリングによるアミノシランの無ハロゲン合成 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016517351A Active JP6529184B2 (ja) | 2013-09-27 | 2014-09-25 | 触媒脱水素カップリングによるアミノシランの無ハロゲン合成 |
Country Status (8)
Country | Link |
---|---|
US (8) | US9920077B2 (ja) |
EP (2) | EP3049499B1 (ja) |
JP (2) | JP6500014B2 (ja) |
KR (2) | KR102326396B1 (ja) |
CN (3) | CN105849221B (ja) |
SG (3) | SG11201602301WA (ja) |
TW (2) | TWI657092B (ja) |
WO (2) | WO2015047914A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021513953A (ja) * | 2018-02-21 | 2021-06-03 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | ペルヒドロポリシラザン組成物及びそれを使用する窒化物膜の形成方法 |
JPWO2021171466A1 (ja) * | 2020-02-27 | 2021-09-02 |
Families Citing this family (240)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9978585B2 (en) | 2012-06-01 | 2018-05-22 | Versum Materials Us, Llc | Organoaminodisilane precursors and methods for depositing films comprising same |
US9337018B2 (en) | 2012-06-01 | 2016-05-10 | Air Products And Chemicals, Inc. | Methods for depositing films with organoaminodisilane precursors |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
KR102326396B1 (ko) * | 2013-09-27 | 2021-11-12 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 아민 치환된 트리실릴아민 및 트리디실릴아민 화합물 |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
EP3149010A4 (en) | 2014-05-30 | 2017-11-08 | Dow Corning Corporation | Monoaminosilane compounds |
KR101956587B1 (ko) * | 2014-05-30 | 2019-03-11 | 다우 실리콘즈 코포레이션 | 다이아미노실란 화합물 |
WO2016054566A1 (en) | 2014-10-02 | 2016-04-07 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Organodisilane precursors for ald/cvd silicon-containing film applications |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
WO2016065221A1 (en) * | 2014-10-24 | 2016-04-28 | Air Products And Chemicals, Inc. | Compositions and methods using same for deposition of silicon-containing films |
US10354860B2 (en) * | 2015-01-29 | 2019-07-16 | Versum Materials Us, Llc | Method and precursors for manufacturing 3D devices |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US9777025B2 (en) * | 2015-03-30 | 2017-10-03 | L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
US11124876B2 (en) | 2015-03-30 | 2021-09-21 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
TWI757260B (zh) | 2015-12-18 | 2022-03-11 | 中國大陸商南大光電半導體材料有限公司 | 參(二矽烷基)胺 |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
TWI753794B (zh) * | 2016-03-23 | 2022-01-21 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 形成含矽膜之組成物及其製法與用途 |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
US10647578B2 (en) | 2016-12-11 | 2020-05-12 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | N—H free and SI-rich per-hydridopolysilzane compositions, their synthesis, and applications |
US10192734B2 (en) | 2016-12-11 | 2019-01-29 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude | Short inorganic trisilylamine-based polysilazanes for thin film deposition |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
JP7100036B2 (ja) * | 2016-12-27 | 2022-07-12 | ナタ セミコンダクター マテリアルズ カンパニー リミテッド | アミンとシランとの間の脱水素カップリング反応の触媒作用 |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
KR102548405B1 (ko) * | 2017-04-20 | 2023-06-28 | (주)디엔에프 | 다이실릴아민 화합물을 포함하는 실리콘 함유 박막증착용 조성물 및 이를 이용하는 실리콘 함유 박막의 제조방법 |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
TWI784022B (zh) | 2017-07-31 | 2022-11-21 | 中國大陸商南大光電半導體材料有限公司 | 1,1,1-參(二甲胺基)二矽烷及其製備方法 |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
JP7143124B2 (ja) * | 2017-08-09 | 2022-09-28 | レール・リキード-ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Ge含有Co膜形成材料、Ge含有Co膜およびその成膜方法 |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
CN111316417B (zh) | 2017-11-27 | 2023-12-22 | 阿斯莫Ip控股公司 | 与批式炉偕同使用的用于储存晶圆匣的储存装置 |
JP7206265B2 (ja) | 2017-11-27 | 2023-01-17 | エーエスエム アイピー ホールディング ビー.ブイ. | クリーン・ミニエンバイロメントを備える装置 |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
CN111630203A (zh) | 2018-01-19 | 2020-09-04 | Asm Ip私人控股有限公司 | 通过等离子体辅助沉积来沉积间隙填充层的方法 |
TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
CN111902359A (zh) * | 2018-02-21 | 2020-11-06 | 乔治洛德方法研究和开发液化空气有限公司 | 全氢聚硅氮烷组合物和用于使用其形成氧化物膜的方法 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11874276B2 (en) | 2018-04-05 | 2024-01-16 | Dana-Farber Cancer Institute, Inc. | STING levels as a biomarker for cancer immunotherapy |
KR20190128558A (ko) | 2018-05-08 | 2019-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조 |
KR20210015823A (ko) * | 2018-05-23 | 2021-02-10 | 다우 실리콘즈 코포레이션 | 유기아미노실란의 제조 방법 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11273432B2 (en) | 2018-05-31 | 2022-03-15 | Arizona Board Of Regents On Behalf Of Arizona State University | Beta-diketiminate manganese catalysts for hydrosilylation, hydroboration, and dehydrogenative pnictogen-silicon and pnictogen-boron bond formation |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
KR20210024462A (ko) | 2018-06-27 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 필름 및 구조체 |
WO2020003000A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP2020096183A (ja) | 2018-12-14 | 2020-06-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
TW202104632A (zh) | 2019-02-20 | 2021-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用來填充形成於基材表面內之凹部的循環沉積方法及設備 |
JP2020136678A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための方法および装置 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
KR20200102357A (ko) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법 |
JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
CN109739070B (zh) * | 2019-03-07 | 2021-11-30 | 中山职业技术学院 | 一种高分辨率高透光度半导体用3d打印式正性光刻胶 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141003A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 가스 감지기를 포함하는 기상 반응기 시스템 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
US11649560B2 (en) * | 2019-06-20 | 2023-05-16 | Applied Materials, Inc. | Method for forming silicon-phosphorous materials |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP2021015791A (ja) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (zh) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | 形成拓扑受控的无定形碳聚合物膜的方法 |
CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
WO2021041532A1 (en) | 2019-08-26 | 2021-03-04 | Dana-Farber Cancer Institute, Inc. | Use of heparin to promote type 1 interferon signaling |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
TW202129060A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 基板處理裝置、及基板處理方法 |
TW202115273A (zh) | 2019-10-10 | 2021-04-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成光阻底層之方法及包括光阻底層之結構 |
KR20210045930A (ko) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 산화물의 토폴로지-선택적 막의 형성 방법 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210078405A (ko) | 2019-12-17 | 2021-06-28 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 나이트라이드 층을 형성하는 방법 및 바나듐 나이트라이드 층을 포함하는 구조 |
KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
JP2021109175A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
KR20210095050A (ko) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
TW202146882A (zh) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
KR20210117157A (ko) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
TW202140831A (zh) | 2020-04-24 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含氮化釩層及包含該層的結構之方法 |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
TW202146831A (zh) | 2020-04-24 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
KR20210143653A (ko) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
TW202200837A (zh) | 2020-05-22 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基材上形成薄膜之反應系統 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TWI797640B (zh) * | 2020-06-18 | 2023-04-01 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 基於矽之自組裝單層組成物及使用該組成物之表面製備 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
KR20220010438A (ko) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | 포토리소그래피에 사용하기 위한 구조체 및 방법 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
TW202212623A (zh) | 2020-08-26 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成金屬氧化矽層及金屬氮氧化矽層的方法、半導體結構、及系統 |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
KR20220053482A (ko) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
TW202235675A (zh) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 注入器、及基板處理設備 |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009500864A (ja) * | 2005-07-09 | 2009-01-08 | アヴィザ テクノロジー インコーポレイテッド | 均一バッチ膜被着工程および、それに従って生産されるフィルム |
JP2016536276A (ja) * | 2013-09-27 | 2016-11-24 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 触媒脱水素カップリングによるアミノシランの無ハロゲン合成 |
Family Cites Families (122)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2907785A (en) | 1957-10-07 | 1959-10-06 | Du Pont | Organic compounds of silicon and phosphorus and their preparation |
DE1158972B (de) | 1961-03-25 | 1963-12-12 | Franz Josef Carduck Dipl Chem | Verfahren zur Herstellung von Trisilylaminen |
GB1006803A (en) | 1963-05-10 | 1965-10-06 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
US3532728A (en) | 1965-01-27 | 1970-10-06 | Monsanto Co | Process for preparing high temperature resistant 1,3 - diaza-2-sila-cycloalkane derivatives |
US4200666A (en) | 1978-08-02 | 1980-04-29 | Texas Instruments Incorporated | Single component monomer for silicon nitride deposition |
JPS61234534A (ja) | 1985-04-11 | 1986-10-18 | Semiconductor Energy Lab Co Ltd | 窒化珪素被膜作成方法 |
US4675424A (en) | 1986-03-19 | 1987-06-23 | Union Carbide Corporation | Method for making polysilazanes |
US4720395A (en) | 1986-08-25 | 1988-01-19 | Anicon, Inc. | Low temperature silicon nitride CVD process |
DE3751651T2 (de) | 1986-10-14 | 1996-10-17 | Minolta Camera Kk | Elektrophotographisches lichtempfindliches Element, das einen Überzug enthält |
JPH0211587A (ja) | 1988-06-29 | 1990-01-16 | Shin Etsu Chem Co Ltd | シリル化方法 |
JP2551901B2 (ja) | 1991-07-26 | 1996-11-06 | エフ エム シー コーポレーション | 接触アルキル化方法 |
US5340507A (en) | 1991-07-26 | 1994-08-23 | Fmc Corporation | Catalyzed hydrocarbyllithium process |
US5211888A (en) | 1991-07-26 | 1993-05-18 | Fmc Corporation | Catalyzed hydrocarbyllithium process |
US5304622A (en) | 1992-01-08 | 1994-04-19 | Nippon Oil Company, Ltd. | Process for producing polysilanes |
JPH06132284A (ja) * | 1992-10-22 | 1994-05-13 | Kawasaki Steel Corp | 半導体装置の保護膜形成方法 |
US5932286A (en) | 1993-03-16 | 1999-08-03 | Applied Materials, Inc. | Deposition of silicon nitride thin films |
JP2508581B2 (ja) | 1993-05-28 | 1996-06-19 | 日本電気株式会社 | 化学気相成長法 |
FR2708924B1 (fr) | 1993-08-12 | 1995-10-20 | Saint Gobain Vitrage Int | Procédé de dépôt d'une couche de nitrure métallique sur un substrat transparent. |
US5413813A (en) | 1993-11-23 | 1995-05-09 | Enichem S.P.A. | CVD of silicon-based ceramic materials on internal surface of a reactor |
US5663398A (en) | 1996-05-17 | 1997-09-02 | Fmc Corporation | Processes for preparing functionalized alkyllithium compounds |
WO1998010463A1 (en) * | 1996-09-05 | 1998-03-12 | Regents Of The University Of Michigan | Germanes and doping with germanes |
FR2759362B1 (fr) | 1997-02-10 | 1999-03-12 | Saint Gobain Vitrage | Substrat transparent muni d'au moins une couche mince a base de nitrure ou d'oxynitrure de silicium et son procede d'obtention |
JPH1174485A (ja) | 1997-06-30 | 1999-03-16 | Toshiba Corp | 半導体装置およびその製造方法 |
US5874368A (en) | 1997-10-02 | 1999-02-23 | Air Products And Chemicals, Inc. | Silicon nitride from bis(tertiarybutylamino)silane |
US6566281B1 (en) | 1997-10-15 | 2003-05-20 | International Business Machines Corporation | Nitrogen-rich barrier layer and structures formed |
US5968611A (en) | 1997-11-26 | 1999-10-19 | The Research Foundation Of State University Of New York | Silicon nitrogen-based films and method of making the same |
WO1999052018A1 (en) | 1998-04-07 | 1999-10-14 | Euv Limited Liability Corporation | Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths |
US6365231B2 (en) | 1998-06-26 | 2002-04-02 | Kabushiki Kaisha Toshiba | Ammonium halide eliminator, chemical vapor deposition system and chemical vapor deposition process |
JP2001168092A (ja) | 1999-01-08 | 2001-06-22 | Toshiba Corp | 半導体装置およびその製造方法 |
US6645884B1 (en) | 1999-07-09 | 2003-11-11 | Applied Materials, Inc. | Method of forming a silicon nitride layer on a substrate |
US6630413B2 (en) | 2000-04-28 | 2003-10-07 | Asm Japan K.K. | CVD syntheses of silicon nitride materials |
JP2002009072A (ja) | 2000-06-23 | 2002-01-11 | Tokyo Electron Ltd | シリコン窒化膜の形成方法及び形成装置 |
US7049308B2 (en) | 2000-10-26 | 2006-05-23 | Duke University | C-nitroso compounds and use thereof |
WO2002080244A2 (en) | 2001-02-12 | 2002-10-10 | Asm America, Inc. | Improved process for deposition of semiconductor films |
JP4116283B2 (ja) | 2001-11-30 | 2008-07-09 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | ヘキサキス(モノヒドロカルビルアミノ)ジシランおよびその製造方法 |
JP4021653B2 (ja) | 2001-11-30 | 2007-12-12 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Cvd法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法 |
DE10208822A1 (de) | 2002-03-01 | 2003-09-11 | Solvent Innovation Gmbh | Halogenfreie ionische Flüssigkeiten |
AU2003212297A1 (en) | 2002-04-04 | 2003-10-20 | Degussa Ag | Bisphosphines as bidentate ligands |
KR100464649B1 (ko) | 2002-04-23 | 2005-01-03 | 주식회사 하이닉스반도체 | 이중 유전막 구조를 가진 반도체소자의 캐패시터 및 그제조방법 |
US7091159B2 (en) * | 2002-09-06 | 2006-08-15 | Halliburton Energy Services, Inc. | Compositions for and methods of stabilizing subterranean formations containing clays |
JP4358492B2 (ja) | 2002-09-25 | 2009-11-04 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 熱化学気相成長法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法 |
US7531679B2 (en) * | 2002-11-14 | 2009-05-12 | Advanced Technology Materials, Inc. | Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride |
JP2004179196A (ja) * | 2002-11-22 | 2004-06-24 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procedes Georges Claude | 化学気相成長法によるシリコン窒化物系絶縁膜の製造方法および製造装置 |
US7972663B2 (en) | 2002-12-20 | 2011-07-05 | Applied Materials, Inc. | Method and apparatus for forming a high quality low temperature silicon nitride layer |
US7122222B2 (en) | 2003-01-23 | 2006-10-17 | Air Products And Chemicals, Inc. | Precursors for depositing silicon containing films and processes thereof |
JP4265409B2 (ja) | 2003-02-13 | 2009-05-20 | 三菱マテリアル株式会社 | Si−Si結合を有する有機Si含有化合物を用いたSi含有薄膜の形成方法 |
JP4954448B2 (ja) * | 2003-04-05 | 2012-06-13 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 有機金属化合物 |
JP4403824B2 (ja) | 2003-05-26 | 2010-01-27 | 東京エレクトロン株式会社 | シリコン窒化膜の成膜方法 |
JP4259247B2 (ja) | 2003-09-17 | 2009-04-30 | 東京エレクトロン株式会社 | 成膜方法 |
US6974781B2 (en) | 2003-10-20 | 2005-12-13 | Asm International N.V. | Reactor precoating for reduced stress and uniform CVD |
TW200526804A (en) | 2003-10-30 | 2005-08-16 | Tokyo Electron Ltd | Method of manufacturing semiconductor device, film-forming apparatus, and storage medium |
US20050227017A1 (en) | 2003-10-31 | 2005-10-13 | Yoshihide Senzaki | Low temperature deposition of silicon nitride |
US20050181633A1 (en) | 2004-02-17 | 2005-08-18 | Hochberg Arthur K. | Precursors for depositing silicon-containing films and processes thereof |
JP4279176B2 (ja) | 2004-03-02 | 2009-06-17 | 株式会社アルバック | シリコン窒化膜の形成方法 |
JP2006016641A (ja) | 2004-06-30 | 2006-01-19 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | 金属シリコンオキサイドの製造方法、金属シリコンオキシナイトライドの製造方法、およびシリコンドープされた金属ナイトライドの製造方法 |
JP4470023B2 (ja) | 2004-08-20 | 2010-06-02 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | シリコン窒化物膜の製造方法 |
US8163261B2 (en) * | 2005-04-05 | 2012-04-24 | Voltaix, Llc | System and method for making Si2H6 and higher silanes |
US7875556B2 (en) * | 2005-05-16 | 2011-01-25 | Air Products And Chemicals, Inc. | Precursors for CVD silicon carbo-nitride and silicon nitride films |
US20070049766A1 (en) * | 2005-06-06 | 2007-03-01 | Belot John A | Synthesis of tetrakis(dialkylamino)silanes |
JP4554446B2 (ja) * | 2005-06-21 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US7601652B2 (en) | 2005-06-21 | 2009-10-13 | Applied Materials, Inc. | Method for treating substrates and films with photoexcitation |
US20100104755A1 (en) | 2005-06-29 | 2010-04-29 | Christian Dussarrat | Deposition method of ternary films |
WO2007008653A2 (en) | 2005-07-08 | 2007-01-18 | Aviza Technology, Inc. | Method for depositing silicon-containing films |
WO2007006212A1 (en) | 2005-07-08 | 2007-01-18 | Shanghai Institute Of Materia Medica, Chinese Academy Of Siences | Tetrahydroprotoberberine compounds, the synthetic method and the use thereof |
US7943721B2 (en) | 2005-10-05 | 2011-05-17 | Kovio, Inc. | Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions |
CN101466865A (zh) | 2006-04-03 | 2009-06-24 | 乔治洛德方法研究和开发液化空气有限公司 | 通过化学汽相淀积使氮化硅膜和/或氧氮化硅膜淀积的方法 |
DE602006019499D1 (de) | 2006-04-03 | 2011-02-17 | Air Liquide | Eine pentakis(dimethylamino)disilanvorstufe enthaltende verbindung, und verfahren zu deren herstellung |
US8530361B2 (en) * | 2006-05-23 | 2013-09-10 | Air Products And Chemicals, Inc. | Process for producing silicon and oxide films from organoaminosilane precursors |
US7638645B2 (en) | 2006-06-28 | 2009-12-29 | President And Fellows Of Harvard University | Metal (IV) tetra-amidinate compounds and their use in vapor deposition |
BRPI0603210A (pt) | 2006-08-15 | 2008-04-08 | Petroleo Brasileiro Sa | método de preparação de lìquidos iÈnicos isentos de halogenetos e lìquidos iÈnicos assim preparados |
CN101495672B (zh) | 2006-11-02 | 2011-12-07 | 高级技术材料公司 | 对于金属薄膜的cvd/ald有用的锑及锗复合物 |
US20080241575A1 (en) | 2007-03-28 | 2008-10-02 | Lavoie Adrein R | Selective aluminum doping of copper interconnects and structures formed thereby |
WO2008129508A2 (en) | 2007-04-20 | 2008-10-30 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Deposition of transition metal carbide containing films |
TWI398541B (zh) | 2007-06-05 | 2013-06-11 | 羅門哈斯電子材料有限公司 | 有機金屬化合物 |
US7605092B2 (en) | 2007-06-29 | 2009-10-20 | Silicon Storage Technology, Inc. | Passive elements, articles, packages, semiconductor composites, and methods of manufacturing same |
EP2193541A1 (en) | 2007-09-18 | 2010-06-09 | L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method of forming silicon-containing films |
US7960205B2 (en) | 2007-11-27 | 2011-06-14 | Air Products And Chemicals, Inc. | Tellurium precursors for GST films in an ALD or CVD process |
US20090162973A1 (en) | 2007-12-21 | 2009-06-25 | Julien Gatineau | Germanium precursors for gst film deposition |
US9034105B2 (en) | 2008-01-10 | 2015-05-19 | American Air Liquide, Inc. | Solid precursor sublimator |
US8193388B2 (en) | 2008-04-15 | 2012-06-05 | American Air Liquide, Inc. | Compounds for depositing tellurium-containing films |
WO2009142663A1 (en) * | 2008-05-21 | 2009-11-26 | The Regents Of The University Of Colorado | Ionic liquids and methods for using same |
KR20110018383A (ko) | 2008-05-21 | 2011-02-23 | 더 리젠트스 오브 더 유니버시티 오브 콜로라도 | 이온성 액체 및 이를 사용하는 방법 |
US8101237B2 (en) | 2008-05-29 | 2012-01-24 | L'Air Liquide SociétéAnonyme pour I'Etude et I'Exploitation des Procédés Georges Claude | Tellurium precursors for film deposition |
US8636845B2 (en) | 2008-06-25 | 2014-01-28 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Metal heterocyclic compounds for deposition of thin films |
US8236381B2 (en) | 2008-08-08 | 2012-08-07 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Metal piperidinate and metal pyridinate precursors for thin film deposition |
KR101120065B1 (ko) * | 2009-01-08 | 2012-03-23 | 솔브레인 주식회사 | 신규의 아미딘 유도체를 가지는 게르마늄 화합물 및 이의 제조 방법 |
JP5671711B2 (ja) | 2009-06-04 | 2015-02-18 | レール リキッド, ソシエテ アノニム プール レチュード エ レクスプロイタシオン デ プロセデ ジョルジュ クロード | トリシリルアミンを生成するための装置および方法 |
US8980382B2 (en) | 2009-12-02 | 2015-03-17 | Applied Materials, Inc. | Oxygen-doping for non-carbon radical-component CVD films |
US8415259B2 (en) | 2009-10-14 | 2013-04-09 | Asm Japan K.K. | Method of depositing dielectric film by modified PEALD method |
US8173554B2 (en) | 2009-10-14 | 2012-05-08 | Asm Japan K.K. | Method of depositing dielectric film having Si-N bonds by modified peald method |
JP5731519B2 (ja) | 2009-10-26 | 2015-06-10 | エーエスエム インターナショナル エヌ.ヴェー.Asm International N.V. | Va族元素を含む薄膜のaldのための前駆体の合成及び使用 |
EP2363512A1 (en) * | 2010-02-04 | 2011-09-07 | Air Products And Chemicals, Inc. | Methods to prepare silicon-containing films |
US9228120B2 (en) | 2010-06-07 | 2016-01-05 | Central Glass Company, Limited | Liquid chemical for forming protecting film |
US8318584B2 (en) | 2010-07-30 | 2012-11-27 | Applied Materials, Inc. | Oxide-rich liner layer for flowable CVD gapfill |
US8394466B2 (en) | 2010-09-03 | 2013-03-12 | Asm Japan K.K. | Method of forming conformal film having si-N bonds on high-aspect ratio pattern |
US20120213940A1 (en) | 2010-10-04 | 2012-08-23 | Applied Materials, Inc. | Atomic layer deposition of silicon nitride using dual-source precursor and interleaved plasma |
US8771807B2 (en) | 2011-05-24 | 2014-07-08 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for making and using same |
US8993072B2 (en) * | 2011-09-27 | 2015-03-31 | Air Products And Chemicals, Inc. | Halogenated organoaminosilane precursors and methods for depositing films comprising same |
JP6175439B2 (ja) | 2011-10-07 | 2017-08-02 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 濃縮相によるトリシリルアミンの製造のための装置及び方法 |
WO2013058061A1 (ja) | 2011-10-20 | 2013-04-25 | 東レバッテリーセパレータフィルム株式会社 | 多孔質膜の製造方法及びその多孔質膜、電池用セパレーター及び電池 |
WO2013082409A1 (en) * | 2011-12-02 | 2013-06-06 | Sabic Innovative Plastics Ip B.V. | Coated polymer films |
WO2013109401A1 (en) * | 2012-01-19 | 2013-07-25 | Christian Dussarrat | Silicon containing compounds for ald deposition of metal silicate films |
US8592328B2 (en) | 2012-01-20 | 2013-11-26 | Novellus Systems, Inc. | Method for depositing a chlorine-free conformal sin film |
US8871656B2 (en) | 2012-03-05 | 2014-10-28 | Applied Materials, Inc. | Flowable films using alternative silicon precursors |
US8912101B2 (en) * | 2012-03-15 | 2014-12-16 | Asm Ip Holding B.V. | Method for forming Si-containing film using two precursors by ALD |
US9337018B2 (en) | 2012-06-01 | 2016-05-10 | Air Products And Chemicals, Inc. | Methods for depositing films with organoaminodisilane precursors |
JP5874546B2 (ja) | 2012-06-21 | 2016-03-02 | 富士通株式会社 | 半導体装置の実装構造 |
KR101361454B1 (ko) | 2012-08-23 | 2014-02-21 | 이근수 | 반도체 소자의 실리콘 산화막 형성 방법 |
KR20140057908A (ko) | 2012-11-05 | 2014-05-14 | 삼성전자주식회사 | 무선 통신 시스템에서 섹터 스위핑을 수행하는 방법 및 장치 |
US10279959B2 (en) | 2012-12-11 | 2019-05-07 | Versum Materials Us, Llc | Alkoxysilylamine compounds and applications thereof |
WO2014196827A2 (en) | 2013-06-07 | 2014-12-11 | Dnf Co., Ltd. | Novel amino-silyl amine compound, method for perparing the 'same and silicon-containing thin-film using the same |
US9245740B2 (en) | 2013-06-07 | 2016-01-26 | Dnf Co., Ltd. | Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same |
US9796739B2 (en) * | 2013-06-26 | 2017-10-24 | Versum Materials Us, Llc | AZA-polysilane precursors and methods for depositing films comprising same |
WO2015105337A1 (en) | 2014-01-08 | 2015-07-16 | Dnf Co.,Ltd. | Novel trisilyl amine derivative, method for preparing the same and silicon-containing thin film using the same |
KR101720017B1 (ko) | 2014-01-08 | 2017-03-27 | (주)디엔에프 | 신규한 트리실릴아민 유도체, 이의 제조방법 및 이를 이용한 실리콘 함유 박막 |
US9233990B2 (en) | 2014-02-28 | 2016-01-12 | Air Products And Chemicals, Inc. | Organoaminosilanes and methods for making same |
WO2015190749A1 (en) | 2014-06-11 | 2015-12-17 | Dnf Co., Ltd. | Novel amino-silyl amine compound and the manufacturing method of dielectric film containing si-n bond by using atomic layer deposition |
WO2016065221A1 (en) | 2014-10-24 | 2016-04-28 | Air Products And Chemicals, Inc. | Compositions and methods using same for deposition of silicon-containing films |
US9777025B2 (en) | 2015-03-30 | 2017-10-03 | L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
WO2017070192A1 (en) | 2015-10-22 | 2017-04-27 | Applied Materials, Inc. | METHODS OF DEPOSITING FLOWABLE FILMS COMPRISING SiO and SiN |
US20190055645A1 (en) | 2016-02-26 | 2019-02-21 | Versum Materials Us, Llc | Compositions and methods using same for deposition of silicon-containing film |
US10192734B2 (en) | 2016-12-11 | 2019-01-29 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude | Short inorganic trisilylamine-based polysilazanes for thin film deposition |
-
2014
- 2014-09-19 KR KR1020167011263A patent/KR102326396B1/ko active IP Right Grant
- 2014-09-19 SG SG11201602301WA patent/SG11201602301WA/en unknown
- 2014-09-19 WO PCT/US2014/056618 patent/WO2015047914A1/en active Application Filing
- 2014-09-19 CN CN201480064594.0A patent/CN105849221B/zh active Active
- 2014-09-19 EP EP14849790.2A patent/EP3049499B1/en active Active
- 2014-09-19 US US15/025,198 patent/US9920077B2/en active Active
- 2014-09-19 US US14/491,581 patent/US9382269B2/en active Active
- 2014-09-19 JP JP2016517387A patent/JP6500014B2/ja active Active
- 2014-09-25 SG SG11201602190PA patent/SG11201602190PA/en unknown
- 2014-09-25 JP JP2016517351A patent/JP6529184B2/ja active Active
- 2014-09-25 KR KR1020167011267A patent/KR102291427B1/ko active IP Right Grant
- 2014-09-25 CN CN201810781647.0A patent/CN108766872B/zh active Active
- 2014-09-25 SG SG10201804678TA patent/SG10201804678TA/en unknown
- 2014-09-25 CN CN201480053247.8A patent/CN105793270B/zh active Active
- 2014-09-25 EP EP14847137.8A patent/EP3049421B1/en active Active
- 2014-09-25 WO PCT/US2014/057377 patent/WO2015048237A2/en active Application Filing
- 2014-09-26 TW TW103133694A patent/TWI657092B/zh active
- 2014-09-26 TW TW103133646A patent/TWI658044B/zh active
-
2016
- 2016-04-01 US US15/088,495 patent/US9453035B2/en active Active
- 2016-08-24 US US15/245,559 patent/US9920078B2/en active Active
-
2018
- 2018-02-07 US US15/890,538 patent/US10494387B2/en active Active
- 2018-02-09 US US15/892,839 patent/US10501484B2/en active Active
-
2019
- 2019-10-14 US US16/601,188 patent/US11274112B2/en active Active
-
2022
- 2022-02-04 US US17/665,282 patent/US11780859B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009500864A (ja) * | 2005-07-09 | 2009-01-08 | アヴィザ テクノロジー インコーポレイテッド | 均一バッチ膜被着工程および、それに従って生産されるフィルム |
JP2016536276A (ja) * | 2013-09-27 | 2016-11-24 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 触媒脱水素カップリングによるアミノシランの無ハロゲン合成 |
Non-Patent Citations (3)
Title |
---|
CHEMICAL COMMUNICATIONS, vol. 49, no. 15, JPN7018001697, 17 January 2013 (2013-01-17), pages 1506 - 1508, ISSN: 0003803022 * |
INORGANIC CHEMISTRY, vol. 18, no. 6, JPN7018001695, 1979, pages 1594 - 1597, ISSN: 0003803020 * |
SYNTHESIS, JPN7018001696, 2005, pages 2677 - 2682, ISSN: 0003803021 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021513953A (ja) * | 2018-02-21 | 2021-06-03 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | ペルヒドロポリシラザン組成物及びそれを使用する窒化物膜の形成方法 |
JP7069331B2 (ja) | 2018-02-21 | 2022-05-17 | レール・リキード-ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | ペルヒドロポリシラザン組成物及びそれを使用する窒化物膜の形成方法 |
JPWO2021171466A1 (ja) * | 2020-02-27 | 2021-09-02 | ||
WO2021171466A1 (ja) * | 2020-02-27 | 2021-09-02 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
JP7274039B2 (ja) | 2020-02-27 | 2023-05-15 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6500014B2 (ja) | 蒸着用前駆体およびその作製方法 | |
JP6993474B2 (ja) | Si含有膜形成組成物 | |
TW201509799A (zh) | 用於ald/cvd含矽薄膜應用之六配位含矽前驅物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170707 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180427 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180530 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180821 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180925 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181119 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181205 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190212 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190306 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190318 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6500014 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |