JP7069331B2 - ペルヒドロポリシラザン組成物及びそれを使用する窒化物膜の形成方法 - Google Patents
ペルヒドロポリシラザン組成物及びそれを使用する窒化物膜の形成方法 Download PDFInfo
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- JP7069331B2 JP7069331B2 JP2020543889A JP2020543889A JP7069331B2 JP 7069331 B2 JP7069331 B2 JP 7069331B2 JP 2020543889 A JP2020543889 A JP 2020543889A JP 2020543889 A JP2020543889 A JP 2020543889A JP 7069331 B2 JP7069331 B2 JP 7069331B2
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- IHMQNZFRFVYNDS-UHFFFAOYSA-N tert-butyl n-amino-n-methylcarbamate Chemical compound CN(N)C(=O)OC(C)(C)C IHMQNZFRFVYNDS-UHFFFAOYSA-N 0.000 description 1
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- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
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- 150000003568 thioethers Chemical class 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Images
Classifications
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Description
nH2SiX2+2nNH3→(-SiH2-NH-)n+nNH4Cl
特定の略語、記号及び用語が次の記載及び請求項全体で使用され、次のものが含まれる。
N-Hフリー、Cフリー及びSiリッチのPHPSは、同時係属の国際特許出願第PCT/US17/65581号明細書に開示される。これらのPHPS組成物は、次式[-N(SiH3)x(SiH2-)y](式中、x=0、1又は2であり、且つy=0、1又は2であり、x+y=2であり;且つx=0、1又は2であり、且つy=1、2又は3であり、x+y=3である)を有するN-Hフリーの繰り返し単位を含んでなる。これらのPHPS組成物は、全てのNがSiに直接結合しているため、N-H結合を含まないか、N-H結合をほとんど含まない。プレ実施例2に示すように、N-Hフリー、Cフリー及びSiリッチのペルヒドロポリシラザンは、従来技術のNH-含有PHPSより良好な空気安定性をもたらす。
同時係属の国際特許出願第PCT/US17/65581号明細書で実証されるように、それが加アンモニア分解によって形成されないという事実、及び出発材料(TSA、BDSASi又は他の揮発性PHPS反応物)もN-Hフリーであるという事実のため、N-Hフリー、Cフリー及びSiリッチのPHPSはいずれのN-H結合も含まない。言い替えれば、これらの反応は、アンモニア(NH3)反応物を必要としないか、又は使用しない。出願人は、NH3反応物が従来技術のPHPS組成物中に含まれるN-H結合の起源として機能し得ると考える。開示された合成プロセスにおいて、TSA反応物を使用すること及びNH3反応物が存在しないことによって、生成物によるいずれかのハロゲン化物の除去、及び/又はさらなるプロセスによるHの量を減少させる必要性が排除される。
線形、分岐又は両方の混合物であるかにかかわらず、N-Hフリー、Cフリー及びSiリッチのPHPSの径が増加するため、Si:N比は、TSA反応物(すなわち、3Si:1N)に対する最大3:1からBDSASI(すなわち、5Si:2N)に対する2.5:1、最小1.5:1まで減少する(全てのNが3SiH2に結合し、全てのSiH2が2Nに結合し、最小3Si:2N又は1.5Si:N比を生じる以下の構造を参照のこと)。
N-Hフリー、Cフリー及びSiリッチのPHPSは、1:4(BDSASi)~1:0の範囲、好ましくは1:2.5~1:0の範囲、より好ましくは1:2~1:0の範囲のSiH2:SiH3比を有する。N-Hフリー、Cフリー及びSiリッチのPHPSにおける最小SiH2:SiH3比は、BDSASIに対して1:4である。NHフリーのPHPSポリマーの合成の間に、TSA反応物との連続的な脱シリル化カップリングが生じ、比率は1:1(-SiH2-N(SiH3)-)繰り返し単位に集中する。最終的に、オリゴマー分子内の-SiH3基間、又は2つのオリゴマー分子間の分子間又は分子内脱シリル化カップリングによって、SiH2:SiH3比は1:1未満に、全てのNが3-SiH2-に結合して、N(SiH2-)3の平均組成を有するポリマーが得られる無限ポリマーの場合、潜在的に1:0までさらに減少する。そのようなオリゴマー構造の例を以下に提供する:
開示されたSi含有膜形成組成物に1つ又は複数の触媒が含まれていてもよい。上記で議論されるように、Si含有膜形成組成物は、0.01%重量/重量~10%重量/重量、好ましくは0.1%重量/重量~5%重量/重量、より好ましくは0.5%重量/重量~3%重量/重量の触媒を含んでなってもよい。
開示されたSi含有膜形成組成物中に1つ又は複数のポリシランが含まれてもよい。Si含有膜形成組成物は、約0.5%重量/重量~約50%重量/重量、好ましくは約1%重量/重量~約20%重量/重量のポリシランを含んでなってよい。
Si含有膜形成組成物は、約0℃からほぼ室温の範囲の温度で乾燥ガラス又はステンレス鋼キャニスター中の不活性雰囲気下で貯蔵されてよい。必要であれば、ステンレス鋼キャニスターは、Si含有膜形成組成物とのいずれの反応も最小化するためにコーティング及び/又は不動態化されてもよい。Si含有膜形成組成物は触媒を含むため、いずれのH2又はSiH4の不注意な漏出も防ぐために安全バルブアセンブリが必要となり得る。
開示されたSi含有膜形成組成物は、エレクトロニクス及びオプティクス産業で使用される窒化ケイ素、酸化ケイ素又は酸窒化ケイ素膜を形成するためのコーティング堆積プロセスにおいても使用されてよい。酸化ケイ素膜は、O2、O3、H2O、H2O2、NO、N2O及びそれらの組合せの少なくとも1つを含有する酸化雰囲気下で堆積させた膜の熱処理から得られる。開示されたSi含有膜形成組成物は、高温に耐えることができる強い材料を必要とする航空宇宙、自動車、軍需又は鉄鋼産業又は他のいずれかの産業で使用するための保護コーティング又はプレセラミック材料(すなわち、窒化物及び酸窒化物)を形成するために使用されてもよい。
図2は、Si含有膜形成組成物の調製、ケイ素基材の調製及びスピンコーティングプロセスのステップに関する代表的なプロセスを示すフローチャートである。当業者は、本明細書の教示から逸脱することなく、図2に提供されるものよりも少ない、又はそれより多いステップが実行されてもよいことを認識するであろう。例えば、R&D環境において利用される特徴決定ステップは、商業的な操作においては必要とされなくてもよい。当業者は、膜の望ましくない酸化を防ぐために不活性雰囲気下で、且つ/又は膜の粒子汚染を防ぐために汚染を防ぐことの補助となるクリーンルーム中でプロセスが好ましくは実行されることをさらに認識するであろう。
図2には、スピンコーティングプロセスのための基材を調製するための代表的なプロセスも提供される。
図2のフローチャートは、代表的なスピンコーティングプロセスも示す。
TSA(30g、0.28mol)をペンタン(266mL)及び触媒(B(C6F5)3(1.2mmol、0.7g)の懸濁液に添加した。反応混合物を室温で1.5時間混合させた。次いで、ドライアイス/IPA浴を使用することによって反応器を-78℃まで冷却し、揮発性物質(主にシラン)を-196℃でステンレス鋼レクチャーボトル中にクライオトラップした。次いで、反応器を不活性雰囲気下で開放し、そして反応をクエンチするために、2mLのTEAを透明溶液に添加した。結果として生じる曇った混合物を濾紙上で濾過し、白色固体(0.25g)を得た。次いで、無色透明のペンタン溶液を蒸留した。揮発性物質の除去後、無色透明の粘性オイルが得られた(18.5g)。固体をFTIRによって分析し、固体が触媒及び抑制剤の付加体であることが確認された。オイルPHPS反応生成物にGC、GPC、FTIR及びTGA分析を行った。
窒素充填グローブボックス中で滴下漏斗にトルエン中10重量%のPHPS配合物(N-Hフリー)5mLを装填した。10重量%PHPS配合物は、1時間~5分間の全反応時間でトルエン中に30gのTSA及び0.25モル%のB(C6F5)触媒の逆添加を使用して合成されたPHPS生成物を使用したものであった。PHPS生成物は、50,000のMw、7200のMn及び6.9のGPCを有した。漏斗を閉鎖し、そして空気安定性試験のために換気フードに移された。漏斗中のPHPS配合物をペトリ皿の中にゆっくりと加えた。配合物の外観のいずれの変化も30分間観察され、そしてビデオカメラに記録された。
トルエン中7重量%のNHフリーのPHPS配合物中に2重量%のトリス(ジメチルアミノ)シクロペンタジエニルジルコニウム触媒[(C5H5)Zr[N(CH3)2]3]を添加した。触媒の重量%は、100%×(触媒の重量)/(トルエン中のPHPSポリマーの重量)として算出された。
実施例1と同一のトルエン中7重量%のNHフリーのPHPS配合物中に、0.5モル%のテトラキス(ジエチルアミノ)チタン(Ti[NEt2]4)触媒を添加した。この触媒ドープ配合物に関して、実施例1と同一のプロセスを実行し、そして結果を表2に列挙する。このデータは、(C5H5)Zr[N(CH3)2]3と同様に、Ti[NEt2]4がPHPSの鎖間架橋を促進することができ、そしてその膜収縮率を減少させることも可能であることを示す。
実施例1と同一のトルエン中7重量%のNHフリーのPHPS配合物中に2重量%のトリス(ジメチルアミノ)シクロペンタジエニルジルコニウム触媒[(C5H5)Zr[N(CH3)2]3]を添加した。PHPSポリマーは870,000のMwを有する。触媒の重量%は、100%×(触媒の重量)/(トルエン中のPHPSポリマーの重量)として算出された。
トルエン中7重量%のポリシラン配合物を、実施例1と同一のトルエン中7重量%のNHフリーのPHPS配合物と1:1の体積比でブレンドした。ポリシランは2500のMwを有する。ブレンド後、N2充填グローブボックス中で1分間、1500rpmで1平方インチのSiウエハ上に0.1~0.2mLの混合配合物をスピンコーティングし、そして実施例1に記載されるものと同一の様式で膜を処理した。PHPSのみの配合物及びポリシランとのブレンド配合物からの膜の収縮率を比較するために、3つの異なるハードベーク温度を使用した。表4に列挙される膜性能は、ポリシランを添加することによって膜収縮率が最高3.2%減少することを示す。XPSデータは、これらの膜がC及びNフリーであり、そしてそれらは化学量論的であるSiO1.9~2.0の化学組成を有することを示す。
トルエン中7重量%のポリシラン配合物を、実施例1と同一のトルエン中7重量%のNHフリーのPHPS配合物と1:1の体積比でブレンドした。ポリシランは2500のMwを有する。ブレンド後、N2充填グローブボックス中で1分間、1500rpmで1平方インチのSiウエハ上に0.1~0.2mLの混合配合物をスピンコーティングした。得られた膜を、実施例4に記載されるものと同一の様式で処理した。表5に列挙される膜性能は、ポリシランを添加することによって膜収縮率が~2%減少することを示す。XPSデータは、これらの膜がC及びNフリーであり、そしてそれらは化学量論的であるSiO2の化学組成を有することを示す。
ジイソプロピルアミン中10重量%のポリシラン配合物と、実施例1のトルエン中7重量%のNHフリーのPHPS配合物とを混合することによって、1/1w/wPHPS/ポリシラン配合物を調製した。ポリシランは554のMwと、509のMnを有する。2重量%のCo2(CO)8触媒をこのPHPS/ポリシラン配合物中に添加した。次いで、PHPS/ポリシラン/Co2(CO)8配合物を200nmPTFEシリンジフィルターに通して濾過した。N2充填グローブボックス中で1分間、1500rpmで1平方インチのSiウエハ上に0.1~0.2mLのこの配合物をスピンコーティングした。Siウエハ上に堆積された膜をグローブボックス中で3分間、150℃においてホットプレート上でプレベークした。プレベークされた膜をグローブボックスから取り出し、エリプソメーターを使用して膜厚を測定した。プレベークされた膜を管状炉に装填し、そして10%の過酸化水素、33%の蒸気及び57%のN2と一緒に3時間、気圧下400℃においてハードベークした。ハードベーク後、膜厚を再び測定してハードベーク膜厚を得て、そして収縮率を算出した:100%×[1-(ハードベーク膜厚)/(プレベーク膜厚)]。結果を表6に列挙する。
ポリマー架橋反応は生じるまでに時間がかかるため、PHPS配合物中の触媒の安定性は重要である。したがって、粒子を生じる反応が触媒とPHPSポリマーとの間で起こらないこと、又は触媒が配合物のゲル化を誘導することを確実にすることは重要である。
NHフリー又はNH含有PHPSとのポリシランの反応性は、ジイソプロピルアミン中10重量%のポリシラン配合物を、実施例1のトルエン中7重量%のNHフリーのPHPS配合物又はヘプタン中10重量%の市販のNH含有PHPS配合物と混合することによって試験された。PHPSとポリシランとの最終重量比は1/1である。混合後の溶液のいずれの光学的又は相変化を目で監視し、またデジタルカメラによって記録した。実施された観察を表7の列8に列挙した。
NHフリーのPHPSは、溶媒としてトルエンが使用されたこと、半分の量の触媒及びTEAクエンチ剤が使用されたこと、反応混合物を室温で2時間撹拌したことを除き、プレ実施例1で実行された合成と同様に合成された。結果として生じるNHフリーのPHPSポリマーオイルは、870,000のMw及び24,840のMnを有した。
Claims (21)
- a)式ML 4 を有し、Mが第IV族又は第V族元素であり、且つ各Lが、独立して、NR 2 、OR、R 5 Cp、N R,R’ R’’-amd、ベータ-ジケトネート、イミノケトネート、ジイミネート及びそれらの組合せからなる群から選択され、R、R’及びR’’が、独立して、H、C 1 ~C 4 炭化水素又はトリアルキルシリル基である、触媒と、
b)332ダルトン~100,000ダルトンの範囲の分子量を有し、且つ次式[-N(SiH3)x(SiH2-)y](式中、x=0、1又は2であり、且つy=0、1又は2であり、x+y=2であり;且つx=0、1又は2であり、且つy=1、2又は3であり、x+y=3である)を有するN-Hフリーの繰り返し単位を含んでなる、N-Hフリー、Cフリー及びSiリッチのペルヒドロポリシラザンと
を含んでなるSi含有膜形成組成物。 - 前記N-Hフリー、Cフリー及びSiリッチのペルヒドロポリシラザンが、1.5:1~2.5:1の範囲のSi:N比を有する、請求項1に記載のSi含有膜形成組成物。
- 前記N-Hフリー、Cフリー及びSiリッチのペルヒドロポリシラザンが、-Si(-)(H)-を有さず、且つ1~5の範囲のSiH2:SiH3比を有する、請求項1に記載のSi含有膜形成組成物。
- 前記触媒が金属カルボニル又は金属カルボニル含有分子であり、金属がCo、Ni、Ru、Fe、Rh、Osから選択される、請求項1に記載のSi含有膜形成組成物。
- 前記触媒がCo2(CO)8である、請求項1に記載のSi含有膜形成組成物。
- ポリシランをさらに含んでなる、請求項1~5のいずれか一項に記載のSi含有膜形成組成物。
- 前記ポリシランが、式
SixH(2x+2)
(式中、xは、4~50の範囲である)、又は式
SinH2n+1-m(NR2)m
(式中、各Rは、独立して、H又はC1~C4炭化水素であり;mは1又は2であり;且つnは、3~50の範囲である)を有する、請求項6に記載のSi含有膜形成組成物。 - 基材上にSi含有膜を形成する方法であって、スピンコーティング、スプレーコーティング、ディップコーティング又はスリットコーティング技術を介して、請求項1~6のいずれか一項に記載のSi含有膜形成組成物と前記基材とを接触させて、前記Si含有膜を形成することを含んでなる方法。
- 前記基材が、1:1~1:100の範囲のアスペクト比を有するトレンチを含んでなる、請求項8に記載の方法。
- 前記Si含有膜を、不活性雰囲気下、30℃~200℃の範囲の温度において暴露することをさらに含んでなる、請求項8に記載の方法。
- 前記Si含有膜を、200℃~1000℃の範囲の温度においてN-H含有雰囲気に暴露することをさらに含んでなる、請求項10に記載の方法。
- a)式ML 4 を有し、Mが第IV族又は第V族元素であり、且つ各Lが、独立して、NR 2 、OR、R 5 Cp、N R,R’ R’’-amd、ベータ-ジケトネート、イミノケトネート、ジイミネート及びそれらの組合せからなる群から選択され、R、R’及びR’’が、独立して、H、C 1 ~C 4 炭化水素又はトリアルキルシリル基である、触媒及び/又はポリシランと、
b)500ダルトン~1,000,000ダルトンの範囲の分子量を有し、且つ次式[-N(SiH 3 ) x (SiH 2 -) y ](式中、x=0、1又は2であり、且つy=0、1又は2であり、x+y=2であり;且つx=0、1又は2であり、且つy=1、2又は3であり、x+y=3である)を有するN-Hフリーの繰り返し単位を含んでなる、N-Hフリー、Cフリー及びSiリッチのペルヒドロポリシラザンと
を含んでなるSi含有膜形成組成物。 - 前記N-Hフリー、Cフリー及びSiリッチのペルヒドロポリシラザンが、1,000ダルトン~200,000ダルトンの範囲の分子量を有する、請求項12に記載のSi含有膜形成組成物。
- 前記触媒が、金属カルボニル又は金属カルボニル含有分子であり、金属がCo、Ni、Ru、Fe、Rh、Osから選択される、請求項12又は13に記載のSi含有膜形成組成物。
- 前記触媒がCo 2 (CO) 8 である、請求項14に記載のSi含有膜形成組成物。
- 基材上にSi含有膜を形成する方法であって、スピンコーティング、スプレーコーティング、ディップコーティング又はスリットコーティング技術を介して、請求項12又は13に記載のSi含有膜形成組成物と前記基材とを接触させて、前記Si含有膜を形成することを含んでなる方法。
- 前記基材が、1:1~1:100の範囲のアスペクト比を有するトレンチを含んでなる、請求項16に記載の方法。
- 前記Si含有膜を、不活性雰囲気下、30℃~200℃の範囲の温度において暴露することをさらに含んでなる、請求項16に記載の方法。
- 前記Si含有膜を、200℃~1000℃の範囲の温度においてN-H含有雰囲気に暴露することをさらに含んでなる、請求項18に記載の方法。
- 前記触媒が、金属カルボニル又は金属カルボニル含有分子であり、金属がCo、Ni、Ru、Fe、Rh、Osから選択される、請求項16に記載の方法。
- 前記触媒がCo 2 (CO) 8 である、請求項20に記載の方法。
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