SG11202007793RA - Perhydropolysilazane compositions and methods for forming nitride films using same - Google Patents
Perhydropolysilazane compositions and methods for forming nitride films using sameInfo
- Publication number
- SG11202007793RA SG11202007793RA SG11202007793RA SG11202007793RA SG11202007793RA SG 11202007793R A SG11202007793R A SG 11202007793RA SG 11202007793R A SG11202007793R A SG 11202007793RA SG 11202007793R A SG11202007793R A SG 11202007793RA SG 11202007793R A SG11202007793R A SG 11202007793RA
- Authority
- SG
- Singapore
- Prior art keywords
- methods
- same
- nitride films
- forming nitride
- perhydropolysilazane
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 title 1
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- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
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- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Structural Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Thermal Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Silicon Polymers (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Compounds (AREA)
- Catalysts (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US201862633195P | 2018-02-21 | 2018-02-21 | |
PCT/US2019/019000 WO2019165102A1 (en) | 2018-02-21 | 2019-02-21 | Perhydropolysilazane compositions and methods for forming nitride films using same |
Publications (1)
Publication Number | Publication Date |
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SG11202007793RA true SG11202007793RA (en) | 2020-09-29 |
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Family Applications (1)
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SG11202007793RA SG11202007793RA (en) | 2018-02-21 | 2019-02-21 | Perhydropolysilazane compositions and methods for forming nitride films using same |
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US (1) | US20210102092A1 (ja) |
EP (1) | EP3755738A4 (ja) |
JP (1) | JP7069331B2 (ja) |
KR (2) | KR102414008B1 (ja) |
CN (2) | CN114773604B (ja) |
SG (1) | SG11202007793RA (ja) |
TW (1) | TWI793262B (ja) |
WO (1) | WO2019165102A1 (ja) |
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KR20200119852A (ko) | 2018-02-21 | 2020-10-20 | 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 퍼하이드로폴리실라잔 조성물 및 이를 사용하여 산화물 막을 형성하는 방법 |
US11450526B2 (en) * | 2018-05-30 | 2022-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cyclic spin-on coating process for forming dielectric material |
WO2022061410A1 (en) * | 2020-09-24 | 2022-03-31 | Nanokote Pty Ltd | Coating process |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2613787B2 (ja) * | 1987-08-13 | 1997-05-28 | 財団法人石油産業活性化センター | 無機シラザン高重合体、その製造方法及びその用途 |
US5208284A (en) | 1989-12-05 | 1993-05-04 | Ethyl Corporation | Coating composition |
DE102004011212A1 (de) * | 2004-03-04 | 2005-09-29 | Clariant International Limited | Perhydropolysilazane enthaltende Beschichtungen für Metall- und Polymeroberflächen |
JP2008305974A (ja) * | 2007-06-07 | 2008-12-18 | Elpida Memory Inc | 酸化膜形成用塗布組成物およびそれを用いた半導体装置の製造方法 |
KR20120099448A (ko) * | 2009-10-28 | 2012-09-10 | 다우 코닝 코포레이션 | 폴리실란-폴리실라잔 코폴리머 및 이들의 제조방법 및 용도 |
JP2013001721A (ja) * | 2011-06-13 | 2013-01-07 | Adeka Corp | 無機ポリシラザン、これを含有してなるシリカ膜形成用塗布液及びシリカ膜の形成方法 |
JP5970197B2 (ja) * | 2012-02-08 | 2016-08-17 | メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 | 無機ポリシラザン樹脂 |
DE102012214290A1 (de) * | 2012-08-10 | 2014-02-13 | Evonik Industries Ag | Verfahren zur gekoppelten Herstellung von Polysilazanen und Trisilylamin |
KR101599952B1 (ko) * | 2012-12-31 | 2016-03-04 | 제일모직 주식회사 | 중합체 제조 방법 및 실리카계 절연막 형성용 조성물 |
CN103910885A (zh) * | 2012-12-31 | 2014-07-09 | 第一毛织株式会社 | 制备间隙填充剂的方法、用其制备的间隙填充剂和使用间隙填充剂制造半导体电容器的方法 |
DE102013209802A1 (de) * | 2013-05-27 | 2014-11-27 | Evonik Industries Ag | Verfahren zur gekoppelten Herstellung von Trisilylamin und Polysilazanen mit einer Molmasse bis 500 g/mol |
US9382269B2 (en) * | 2013-09-27 | 2016-07-05 | Voltaix, Llc | Halogen free syntheses of aminosilanes by catalytic dehydrogenative coupling |
JP6104785B2 (ja) * | 2013-12-09 | 2017-03-29 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | ペルヒドロポリシラザン、およびそれを含む組成物、ならびにそれを用いたシリカ質膜の形成方法 |
SG11201607910PA (en) * | 2014-04-24 | 2016-10-28 | Az Electronic Materials Luxembourg Sarl | Copolymerized polysilazane, manufacturing method therefor, composition comprising same, and method for forming siliceous film using same |
KR101497500B1 (ko) * | 2014-06-16 | 2015-03-03 | 한국과학기술연구원 | 파장변환층을 구비하는 태양전지 및 그의 제조 방법 |
SG11201703195QA (en) * | 2014-10-24 | 2017-05-30 | Versum Materials Us Llc | Compositions and methods using same for deposition of silicon-containing film |
US9777025B2 (en) * | 2015-03-30 | 2017-10-03 | L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
US10192734B2 (en) * | 2016-12-11 | 2019-01-29 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude | Short inorganic trisilylamine-based polysilazanes for thin film deposition |
US10647578B2 (en) * | 2016-12-11 | 2020-05-12 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | N—H free and SI-rich per-hydridopolysilzane compositions, their synthesis, and applications |
KR20200119852A (ko) * | 2018-02-21 | 2020-10-20 | 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 퍼하이드로폴리실라잔 조성물 및 이를 사용하여 산화물 막을 형성하는 방법 |
-
2019
- 2019-02-19 TW TW108105474A patent/TWI793262B/zh active
- 2019-02-21 CN CN202210565731.5A patent/CN114773604B/zh active Active
- 2019-02-21 KR KR1020227015930A patent/KR102414008B1/ko active IP Right Grant
- 2019-02-21 WO PCT/US2019/019000 patent/WO2019165102A1/en unknown
- 2019-02-21 SG SG11202007793RA patent/SG11202007793RA/en unknown
- 2019-02-21 CN CN201980022629.7A patent/CN111918905B/zh active Active
- 2019-02-21 EP EP19757206.8A patent/EP3755738A4/en active Pending
- 2019-02-21 KR KR1020207026405A patent/KR102400945B1/ko active IP Right Grant
- 2019-02-21 US US16/971,873 patent/US20210102092A1/en not_active Abandoned
- 2019-02-21 JP JP2020543889A patent/JP7069331B2/ja active Active
Also Published As
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CN114773604A (zh) | 2022-07-22 |
KR20200120714A (ko) | 2020-10-21 |
TW201938651A (zh) | 2019-10-01 |
CN111918905A (zh) | 2020-11-10 |
TWI793262B (zh) | 2023-02-21 |
JP7069331B2 (ja) | 2022-05-17 |
KR102414008B1 (ko) | 2022-06-27 |
EP3755738A4 (en) | 2022-03-02 |
CN111918905B (zh) | 2022-05-24 |
CN114773604B (zh) | 2023-08-15 |
JP2021513953A (ja) | 2021-06-03 |
KR102400945B1 (ko) | 2022-05-20 |
EP3755738A1 (en) | 2020-12-30 |
WO2019165102A1 (en) | 2019-08-29 |
KR20220066429A (ko) | 2022-05-24 |
US20210102092A1 (en) | 2021-04-08 |
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