SG11202108234QA - Compositions and methods using same for silicon containing films - Google Patents
Compositions and methods using same for silicon containing filmsInfo
- Publication number
- SG11202108234QA SG11202108234QA SG11202108234QA SG11202108234QA SG11202108234QA SG 11202108234Q A SG11202108234Q A SG 11202108234QA SG 11202108234Q A SG11202108234Q A SG 11202108234QA SG 11202108234Q A SG11202108234Q A SG 11202108234QA SG 11202108234Q A SG11202108234Q A SG 11202108234QA
- Authority
- SG
- Singapore
- Prior art keywords
- compositions
- methods
- same
- silicon containing
- containing films
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000000203 mixture Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/025—Silicon compounds without C-silicon linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/36—Carbonitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962800085P | 2019-02-01 | 2019-02-01 | |
| PCT/US2020/016335 WO2020160529A1 (en) | 2019-02-01 | 2020-02-03 | Compositions and methods using same for silicon containing films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202108234QA true SG11202108234QA (en) | 2021-08-30 |
Family
ID=71837818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202108234QA SG11202108234QA (en) | 2019-02-01 | 2020-02-03 | Compositions and methods using same for silicon containing films |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US20200247830A1 (en) |
| EP (1) | EP3902938A4 (en) |
| JP (1) | JP2022518595A (en) |
| KR (1) | KR20210111360A (en) |
| CN (1) | CN113518834A (en) |
| SG (1) | SG11202108234QA (en) |
| TW (1) | TWI750577B (en) |
| WO (1) | WO2020160529A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11186909B2 (en) * | 2019-08-26 | 2021-11-30 | Applied Materials, Inc. | Methods of depositing low-K films |
| GB202008892D0 (en) * | 2020-06-11 | 2020-07-29 | Spts Technologies Ltd | Method of deposition |
| US11621162B2 (en) * | 2020-10-05 | 2023-04-04 | Applied Materials, Inc. | Systems and methods for forming UV-cured low-κ dielectric films |
| CN113797568B (en) * | 2021-08-20 | 2022-12-23 | 洛阳中硅高科技有限公司 | Synthesis device and synthesis method of electronic grade tri (dimethylamino) silane |
| US20230193462A1 (en) * | 2021-12-17 | 2023-06-22 | Entegris, Inc. | Precursors and related methods |
| WO2023195691A1 (en) * | 2022-04-08 | 2023-10-12 | (주)디엔에프 | Silicon-bearing encapsulation film composition including silazane compound and method for manufacturing silicon-bearing encapsulation film using same |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3741060A1 (en) * | 1987-12-04 | 1989-06-15 | Hoechst Ag | SI, SI'-DIORGANYL-N-ALKYL-TETRACHLOR-DISILAZANE AND METHOD FOR THEIR PRODUCTION |
| US7902084B2 (en) * | 2007-07-05 | 2011-03-08 | Micron Technology, Inc. | Silicon dioxide deposition methods using at least ozone and TEOS as deposition precursors |
| US8241624B2 (en) | 2008-04-18 | 2012-08-14 | Ecolab Usa Inc. | Method of disinfecting packages with composition containing peracid and catalase |
| US8771807B2 (en) * | 2011-05-24 | 2014-07-08 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for making and using same |
| US8575033B2 (en) | 2011-09-13 | 2013-11-05 | Applied Materials, Inc. | Carbosilane precursors for low temperature film deposition |
| US9460912B2 (en) * | 2012-04-12 | 2016-10-04 | Air Products And Chemicals, Inc. | High temperature atomic layer deposition of silicon oxide thin films |
| WO2014134476A1 (en) | 2013-03-01 | 2014-09-04 | Applied Materials, Inc. | LOW TEMPERATURE ATOMIC LAYER DEPOSITION OF FILMS COMPRISING SiCN OR SiCON |
| JP6112928B2 (en) | 2013-03-19 | 2017-04-12 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing apparatus, and program |
| JP6155063B2 (en) | 2013-03-19 | 2017-06-28 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing apparatus, and program |
| JP5864637B2 (en) | 2013-03-19 | 2016-02-17 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing apparatus, program, and recording medium |
| JP6125946B2 (en) | 2013-08-08 | 2017-05-10 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing apparatus, and program |
| JP6267800B2 (en) * | 2014-01-08 | 2018-01-24 | ディーエヌエフ カンパニー リミテッドＤＮＦ Ｃｏ． Ｌｔｄ． | Novel cyclodisilazane derivative, production method thereof, and silicon-containing thin film using the same |
| JP6545093B2 (en) * | 2015-12-14 | 2019-07-17 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Semiconductor device manufacturing method, substrate processing apparatus and program |
| JP6573578B2 (en) * | 2016-05-31 | 2019-09-11 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Semiconductor device manufacturing method, substrate processing apparatus, and program |
| KR20180034798A (en) * | 2016-09-28 | 2018-04-05 | 삼성전자주식회사 | Method for forming dielectric layer and Method for fabricating semiconductor device |
-
2020
- 2020-02-03 SG SG11202108234QA patent/SG11202108234QA/en unknown
- 2020-02-03 WO PCT/US2020/016335 patent/WO2020160529A1/en unknown
- 2020-02-03 EP EP20747746.4A patent/EP3902938A4/en active Pending
- 2020-02-03 TW TW109103285A patent/TWI750577B/en active
- 2020-02-03 CN CN202080017710.9A patent/CN113518834A/en active Pending
- 2020-02-03 JP JP2021544513A patent/JP2022518595A/en active Pending
- 2020-02-03 KR KR1020217028110A patent/KR20210111360A/en unknown
- 2020-02-03 US US16/779,798 patent/US20200247830A1/en not_active Abandoned
-
2023
- 2023-01-09 US US18/152,116 patent/US20230183272A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20230183272A1 (en) | 2023-06-15 |
| JP2022518595A (en) | 2022-03-15 |
| WO2020160529A1 (en) | 2020-08-06 |
| CN113518834A (en) | 2021-10-19 |
| TWI750577B (en) | 2021-12-21 |
| EP3902938A1 (en) | 2021-11-03 |
| EP3902938A4 (en) | 2022-09-14 |
| TW202035430A (en) | 2020-10-01 |
| KR20210111360A (en) | 2021-09-10 |
| US20200247830A1 (en) | 2020-08-06 |
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