SG11202103910PA - Silicon nitride etching composition and method - Google Patents
Silicon nitride etching composition and methodInfo
- Publication number
- SG11202103910PA SG11202103910PA SG11202103910PA SG11202103910PA SG11202103910PA SG 11202103910P A SG11202103910P A SG 11202103910PA SG 11202103910P A SG11202103910P A SG 11202103910PA SG 11202103910P A SG11202103910P A SG 11202103910PA SG 11202103910P A SG11202103910P A SG 11202103910PA
- Authority
- SG
- Singapore
- Prior art keywords
- silicon nitride
- etching composition
- nitride etching
- composition
- silicon
- Prior art date
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title 1
- 238000005530 etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/10—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a boron compound
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Weting (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862767904P | 2018-11-15 | 2018-11-15 | |
PCT/US2019/060974 WO2020102228A1 (en) | 2018-11-15 | 2019-11-12 | Silicon nitride etching composition and method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202103910PA true SG11202103910PA (en) | 2021-05-28 |
Family
ID=70727494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202103910PA SG11202103910PA (en) | 2018-11-15 | 2019-11-12 | Silicon nitride etching composition and method |
Country Status (7)
Country | Link |
---|---|
US (3) | US11053440B2 (en) |
JP (2) | JP7438211B2 (en) |
KR (2) | KR102628802B1 (en) |
CN (1) | CN112996881A (en) |
SG (1) | SG11202103910PA (en) |
TW (2) | TW202325824A (en) |
WO (1) | WO2020102228A1 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102628802B1 (en) * | 2018-11-15 | 2024-01-24 | 엔테그리스, 아이엔씨. | Silicon nitride etching compositions and methods |
JP7398550B2 (en) * | 2019-08-21 | 2023-12-14 | インテグリス・インコーポレーテッド | Improved formulation for highly selective silicon nitride etching |
WO2022026739A1 (en) * | 2020-07-30 | 2022-02-03 | Entegris, Inc. | Compositions and methods for selectively etching silicon nitride films |
KR102345842B1 (en) * | 2020-09-21 | 2021-12-31 | 주식회사 이엔에프테크놀로지 | Silicon nitride layer etching composition and etching method using the same |
US20220363990A1 (en) * | 2021-05-12 | 2022-11-17 | Entegris, Inc. | Selective etchant compositions and methods |
EP4347744A1 (en) * | 2021-05-26 | 2024-04-10 | Entegris, Inc. | Compositions and methods for selectively etching silicon nitride films |
KR20230079903A (en) * | 2021-11-29 | 2023-06-07 | (주)후성 | Etching composition and method for preparing the same |
JP2023109710A (en) * | 2022-01-27 | 2023-08-08 | ステラケミファ株式会社 | Microprocessing treatment agent and microprocessing treatment method |
CN116631852A (en) * | 2022-02-14 | 2023-08-22 | 联芯集成电路制造(厦门)有限公司 | Method for removing hard mask layer |
CN115873599B (en) * | 2022-10-10 | 2024-05-17 | 湖北兴福电子材料股份有限公司 | Selective etching solution for 3D NAND structure sheet of silicon nitride/silicon oxide |
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US6162370A (en) | 1998-08-28 | 2000-12-19 | Ashland Inc. | Composition and method for selectively etching a silicon nitride film |
KR100327342B1 (en) | 1999-10-27 | 2002-03-06 | 윤종용 | Composite etchant for a nitride etching in a semiconductor process and an etching method using the same etchant |
US20030022800A1 (en) | 2001-06-14 | 2003-01-30 | Peters Darryl W. | Aqueous buffered fluoride-containing etch residue removers and cleaners |
US20060021974A1 (en) | 2004-01-29 | 2006-02-02 | Applied Materials, Inc. | Method and composition for polishing a substrate |
KR20060108436A (en) | 2005-04-13 | 2006-10-18 | 매그나칩 반도체 유한회사 | Composition for cleaning semiconductor device and method for cleaning semiconductor device using it |
US8025811B2 (en) | 2006-03-29 | 2011-09-27 | Intel Corporation | Composition for etching a metal hard mask material in semiconductor processing |
DE102007012578A1 (en) * | 2006-09-01 | 2008-03-06 | Bühler PARTEC GmbH | Cationically stabilized aqueous silica dispersion, process for their preparation and their use |
CN101605869B (en) * | 2006-12-21 | 2014-03-05 | 高级技术材料公司 | Compositions and methods for selective removal of silicon nitride |
JP5332197B2 (en) * | 2007-01-12 | 2013-11-06 | 東ソー株式会社 | Etching composition and etching method |
KR101097277B1 (en) | 2009-10-07 | 2011-12-22 | 솔브레인 주식회사 | A Composition for wet etching |
JP2012033561A (en) * | 2010-07-28 | 2012-02-16 | Sanyo Chem Ind Ltd | Etchant for silicon nitride |
JP2012099550A (en) * | 2010-10-29 | 2012-05-24 | Sanyo Chem Ind Ltd | Etchant for silicon nitride |
KR101391605B1 (en) | 2010-12-31 | 2014-05-08 | 솔브레인 주식회사 | A Composition for wet etching of silicon nitride or silicon oxide |
KR101922855B1 (en) | 2011-08-09 | 2019-02-27 | 바스프 에스이 | Aqueous alkaline compositions and method for treating the surface of silicon substrates |
JP5913869B2 (en) | 2011-08-31 | 2016-04-27 | 林純薬工業株式会社 | Etching solution composition and etching method |
KR101335855B1 (en) | 2011-12-20 | 2013-12-02 | 오씨아이 주식회사 | Etching solution for silicon nitride layer |
KR101380487B1 (en) | 2012-05-09 | 2014-04-01 | 오씨아이 주식회사 | Etching solution for silicon nitride layer |
JP2014099480A (en) | 2012-11-13 | 2014-05-29 | Fujifilm Corp | Semiconductor substrate etching method and semiconductor element manufacturing method |
JP6180298B2 (en) | 2013-11-27 | 2017-08-16 | 株式会社Adeka | Etching solution composition and etching method |
US9868902B2 (en) | 2014-07-17 | 2018-01-16 | Soulbrain Co., Ltd. | Composition for etching |
KR20160050536A (en) * | 2014-10-30 | 2016-05-11 | 램테크놀러지 주식회사 | Etchant compositions for nitride layers and methods of manufacturing semiconductor devices using the same |
WO2016096083A1 (en) | 2014-12-19 | 2016-06-23 | Merck Patent Gmbh | Agent for increasing etching rates |
US10301580B2 (en) * | 2014-12-30 | 2019-05-28 | Versum Materials Us, Llc | Stripping compositions having high WN/W etching selectivity |
KR101757812B1 (en) | 2015-05-29 | 2017-07-14 | 세메스 주식회사 | System for regenerating the phosphoric acid solution, and Apparatus and method for treating substrate |
KR101728951B1 (en) | 2015-06-25 | 2017-04-21 | 오씨아이 주식회사 | Etching solution for silicon nitride layer |
KR20170009240A (en) * | 2015-07-16 | 2017-01-25 | 동우 화인켐 주식회사 | Non-fluorinated type etching composition for silicon nitride layer |
US20180237923A1 (en) * | 2015-08-26 | 2018-08-23 | Adeka Corporation | Etching liquid composition and etching method |
EP3344716A4 (en) * | 2015-09-03 | 2019-04-10 | Cabot Microelectronics Corporation | Methods and compositions for processing dielectric substrate |
KR102443370B1 (en) * | 2015-11-20 | 2022-09-15 | 동우 화인켐 주식회사 | Etching solution composition for a silicon nitride layer |
WO2017095022A1 (en) | 2015-12-04 | 2017-06-08 | 솔브레인 주식회사 | Composition for etching and method for manufacturing semiconductor device using same |
KR102545800B1 (en) * | 2015-12-04 | 2023-06-20 | 솔브레인 주식회사 | Composition for etching and manufacturing method of semiconductor device using the same |
US10515820B2 (en) | 2016-03-30 | 2019-12-24 | Tokyo Electron Limited | Process and apparatus for processing a nitride structure without silica deposition |
US10167425B2 (en) * | 2016-05-04 | 2019-01-01 | Oci Company Ltd. | Etching solution capable of suppressing particle appearance |
KR102424391B1 (en) * | 2016-11-24 | 2022-08-05 | 삼성전자주식회사 | Etchant compositions and methods of manufacturing integrated circuit device using the same |
KR102240647B1 (en) * | 2017-03-28 | 2021-04-15 | 주식회사 이엔에프테크놀로지 | Etching composion for silicon nitride layer |
KR101828437B1 (en) | 2017-04-06 | 2018-03-29 | 주식회사 디엔에스 | A Composition for Wet Etching to Silicon Nitride |
KR102258316B1 (en) * | 2018-06-25 | 2021-06-01 | 주식회사 이엔에프테크놀로지 | Silicon nitride layer etching composition |
KR102628802B1 (en) * | 2018-11-15 | 2024-01-24 | 엔테그리스, 아이엔씨. | Silicon nitride etching compositions and methods |
-
2019
- 2019-11-12 KR KR1020217014303A patent/KR102628802B1/en active Application Filing
- 2019-11-12 SG SG11202103910PA patent/SG11202103910PA/en unknown
- 2019-11-12 JP JP2021526685A patent/JP7438211B2/en active Active
- 2019-11-12 US US16/681,449 patent/US11053440B2/en active Active
- 2019-11-12 WO PCT/US2019/060974 patent/WO2020102228A1/en active Application Filing
- 2019-11-12 CN CN201980073936.8A patent/CN112996881A/en active Pending
- 2019-11-12 KR KR1020247002231A patent/KR20240013860A/en active Application Filing
- 2019-11-15 TW TW112106253A patent/TW202325824A/en unknown
- 2019-11-15 TW TW108141573A patent/TWI797396B/en active
-
2021
- 2021-06-07 US US17/341,138 patent/US11697767B2/en active Active
-
2023
- 2023-05-11 JP JP2023078794A patent/JP2023109854A/en active Pending
- 2023-05-24 US US18/201,363 patent/US20230295502A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JP7438211B2 (en) | 2024-02-26 |
US11697767B2 (en) | 2023-07-11 |
TW202026403A (en) | 2020-07-16 |
TWI797396B (en) | 2023-04-01 |
TW202325824A (en) | 2023-07-01 |
US20210296136A1 (en) | 2021-09-23 |
CN112996881A (en) | 2021-06-18 |
US20200157423A1 (en) | 2020-05-21 |
WO2020102228A1 (en) | 2020-05-22 |
KR20210066007A (en) | 2021-06-04 |
JP2022507589A (en) | 2022-01-18 |
KR102628802B1 (en) | 2024-01-24 |
US11053440B2 (en) | 2021-07-06 |
US20230295502A1 (en) | 2023-09-21 |
KR20240013860A (en) | 2024-01-30 |
JP2023109854A (en) | 2023-08-08 |
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