CN105683336A - 用于选择性蚀刻氮化钛的组合物和方法 - Google Patents

用于选择性蚀刻氮化钛的组合物和方法 Download PDF

Info

Publication number
CN105683336A
CN105683336A CN201480032492.0A CN201480032492A CN105683336A CN 105683336 A CN105683336 A CN 105683336A CN 201480032492 A CN201480032492 A CN 201480032492A CN 105683336 A CN105683336 A CN 105683336A
Authority
CN
China
Prior art keywords
acid
composition
ammonium
ether
hydroxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480032492.0A
Other languages
English (en)
Chinese (zh)
Inventor
陈丽敏
斯蒂芬·里皮
埃马纽尔·I·库珀
宋凌雁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Entegris Inc
Original Assignee
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Priority to CN202010258552.8A priority Critical patent/CN111394100A/zh
Publication of CN105683336A publication Critical patent/CN105683336A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3942—Inorganic per-compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/395—Bleaching agents
    • C11D3/3956—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20—Other heavy metals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
CN201480032492.0A 2013-06-06 2014-06-06 用于选择性蚀刻氮化钛的组合物和方法 Pending CN105683336A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010258552.8A CN111394100A (zh) 2013-06-06 2014-06-06 用于选择性蚀刻氮化钛的组合物和方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361831928P 2013-06-06 2013-06-06
US61/831,928 2013-06-06
PCT/US2014/041322 WO2014197808A1 (en) 2013-06-06 2014-06-06 Compositions and methods for selectively etching titanium nitride

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202010258552.8A Division CN111394100A (zh) 2013-06-06 2014-06-06 用于选择性蚀刻氮化钛的组合物和方法

Publications (1)

Publication Number Publication Date
CN105683336A true CN105683336A (zh) 2016-06-15

Family

ID=52008619

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201480032492.0A Pending CN105683336A (zh) 2013-06-06 2014-06-06 用于选择性蚀刻氮化钛的组合物和方法
CN202010258552.8A Pending CN111394100A (zh) 2013-06-06 2014-06-06 用于选择性蚀刻氮化钛的组合物和方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202010258552.8A Pending CN111394100A (zh) 2013-06-06 2014-06-06 用于选择性蚀刻氮化钛的组合物和方法

Country Status (8)

Country Link
US (1) US10920141B2 (enExample)
EP (1) EP3004287B1 (enExample)
JP (2) JP6723152B2 (enExample)
KR (1) KR102338550B1 (enExample)
CN (2) CN105683336A (enExample)
SG (2) SG11201509933QA (enExample)
TW (1) TWI651396B (enExample)
WO (1) WO2014197808A1 (enExample)

Cited By (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107229193A (zh) * 2017-07-25 2017-10-03 上海新阳半导体材料股份有限公司 一种清洗剂、其制备方法和应用
CN107881032A (zh) * 2016-09-30 2018-04-06 细美事有限公司 无水基板清洁组合物、基板处理方法和基板处理装置
CN108122752A (zh) * 2016-11-29 2018-06-05 三星电子株式会社 蚀刻组合物和通过使用其制造半导体器件的方法
CN108231573A (zh) * 2016-12-14 2018-06-29 三星电子株式会社 蚀刻组合物及通过使用其制造半导体器件的方法
CN108929633A (zh) * 2017-05-25 2018-12-04 富士胶片平面解决方案有限公司 用于钴应用的化学机械抛光浆料
CN109161358A (zh) * 2018-07-25 2019-01-08 佛山腾鲤新能源科技有限公司 一种导电胶的制备方法
CN109594088A (zh) * 2018-12-29 2019-04-09 陕西宝成航空仪表有限责任公司 氮化钛或氮化铝钛膜层的退除液及制备方法和退除方法
CN109791377A (zh) * 2016-09-09 2019-05-21 花王株式会社 树脂掩膜剥离用洗涤剂组合物
CN110177903A (zh) * 2017-01-17 2019-08-27 恩特格里斯公司 高阶节点工艺后端处理的蚀刻后残留物去除
CN110240907A (zh) * 2018-03-09 2019-09-17 弗萨姆材料美国有限责任公司 用于在半导体器件制造期间从硅-锗/锗叠层选择性除去硅-锗合金的蚀刻溶液
CN110272742A (zh) * 2018-03-16 2019-09-24 弗萨姆材料美国有限责任公司 用于钨字线凹进的蚀刻溶液
CN110284139A (zh) * 2018-03-19 2019-09-27 三星显示有限公司 蚀刻剂组合物和使用其制造金属图案和阵列基板的方法
CN110484919A (zh) * 2018-05-14 2019-11-22 深圳市裕展精密科技有限公司 退镀液及其退除含钛膜层的方法、及表面形成有含钛膜层的基材的退镀方法
CN110777381A (zh) * 2018-07-26 2020-02-11 弗萨姆材料美国有限责任公司 用于TiN硬掩模去除和蚀刻残留物清洁的组合物
CN111430799A (zh) * 2020-04-22 2020-07-17 上海纳米技术及应用国家工程研究中心有限公司 一种用于镍锰酸锂正极材料的高压电解液
CN111465716A (zh) * 2017-12-08 2020-07-28 巴斯夫欧洲公司 用于在低-k材料、铜和/或钴的层的存在下选择性蚀刻包含铝化合物的层的组合物及方法
CN111565870A (zh) * 2018-01-26 2020-08-21 日清工程株式会社 铜微粒子
CN111850564A (zh) * 2020-07-16 2020-10-30 桂林理工大学 一种钛化物膜层退镀液及退镀方法
CN111936936A (zh) * 2018-04-04 2020-11-13 巴斯夫欧洲公司 用于去除灰化后残留物和/或用于氧化蚀刻含TiN层料或掩模的含咪唑烷硫酮组合物
CN112041970A (zh) * 2018-04-27 2020-12-04 三菱瓦斯化学株式会社 水性组合物和使用其的清洗方法
CN112080279A (zh) * 2019-06-12 2020-12-15 关东鑫林科技股份有限公司 蚀刻组合物
US10920141B2 (en) 2013-06-06 2021-02-16 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
CN112442372A (zh) * 2019-09-04 2021-03-05 Sk新技术株式会社 蚀刻组合物，使用其蚀刻半导体器件的绝缘膜的方法以及制备半导体器件的方法
CN112540515A (zh) * 2020-12-16 2021-03-23 江苏艾森半导体材料股份有限公司 一种光刻胶去胶液及其制备方法和应用
CN113161234A (zh) * 2021-04-27 2021-07-23 上海新阳半导体材料股份有限公司 一种含氟清洗液组合物的应用
CN113150884A (zh) * 2021-04-27 2021-07-23 上海新阳半导体材料股份有限公司 一种含氟清洗液组合物的制备方法
CN113186043A (zh) * 2021-04-27 2021-07-30 上海新阳半导体材料股份有限公司 一种含氟清洗液组合物及其应用
CN113302730A (zh) * 2018-12-14 2021-08-24 东京毅力科创株式会社 使用照射刻蚀溶液来降低材料粗糙度的加工系统和平台
CN113430066A (zh) * 2020-03-23 2021-09-24 上海新阳半导体材料股份有限公司 用于选择性移除硬遮罩的清洗组合物、其制备方法及应用
CN113574159A (zh) * 2019-03-14 2021-10-29 日产化学株式会社 清洗剂组合物以及清洗方法
CN113667552A (zh) * 2020-05-15 2021-11-19 安集微电子科技（上海）股份有限公司 一种用于铜大马士革工艺的清洗液
TWI748369B (zh) * 2019-03-11 2021-12-01 美商慧盛材料美國責任有限公司 用於鋁氮化物的蝕刻溶液及方法
CN114144508A (zh) * 2019-06-03 2022-03-04 富士胶片电子材料美国有限公司 蚀刻组合物
CN114369462A (zh) * 2021-12-16 2022-04-19 湖北兴福电子材料有限公司 一种选择性蚀刻氮化钛及钨的蚀刻液
CN114989825A (zh) * 2022-06-30 2022-09-02 湖北兴福电子材料有限公司 一种掺钪氮化铝和钨的选择性蚀刻液
CN115011347A (zh) * 2022-06-30 2022-09-06 湖北兴福电子材料有限公司 一种氮化铝和钨的选择性蚀刻液
CN115044376A (zh) * 2022-06-30 2022-09-13 湖北兴福电子材料有限公司 一种掺钪氮化铝蚀刻液及其应用
CN115210339A (zh) * 2020-03-04 2022-10-18 弗萨姆材料美国有限责任公司 用于氮化钛和钼导电金属线的蚀刻溶液
CN115763494A (zh) * 2022-11-16 2023-03-07 Tcl华星光电技术有限公司 显示面板及其制作方法、蚀刻液组合物
CN116057208A (zh) * 2020-08-07 2023-05-02 株式会社德山 半导体晶片用处理液
CN116096837A (zh) * 2020-08-13 2023-05-09 恩特格里斯公司 氮化物蚀刻剂组合物和方法
CN116235282A (zh) * 2020-09-29 2023-06-06 三菱瓦斯化学株式会社 半导体基板清洗用组合物和清洗方法
CN116948647A (zh) * 2023-06-29 2023-10-27 浙江奥首材料科技有限公司 一种氮化物半导体蚀刻液、其制备方法与用途
CN117425717A (zh) * 2021-05-12 2024-01-19 恩特格里斯公司 选择性蚀刻剂组合物及方法
US12112959B2 (en) 2018-09-04 2024-10-08 Tokyo Electron Limited Processing systems and platforms for roughness reduction of materials using illuminated etch solutions

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014089196A1 (en) * 2012-12-05 2014-06-12 Advanced Technology Materials, Inc. Compositions for cleaning iii-v semiconductor materials and methods of using same
US10138117B2 (en) 2013-07-31 2018-11-27 Entegris, Inc. Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility
WO2015031620A1 (en) 2013-08-30 2015-03-05 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
US9562211B2 (en) * 2013-12-06 2017-02-07 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
WO2015095175A1 (en) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Ni:nige:ge selective etch formulations and method of using same
TWI662379B (zh) 2013-12-20 2019-06-11 美商恩特葛瑞斯股份有限公司 移除離子植入抗蝕劑之非氧化強酸類之用途
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
TWI659098B (zh) 2014-01-29 2019-05-11 美商恩特葛瑞斯股份有限公司 化學機械研磨後配方及其使用方法
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
US9297081B2 (en) * 2014-02-21 2016-03-29 Ecolab Usa Inc. Use of neutralizing agent in olefin or styrene production
WO2015156171A1 (ja) * 2014-04-10 2015-10-15 三菱瓦斯化学株式会社 半導体素子の洗浄用液体組成物、および半導体素子の洗浄方法
CN107155367B (zh) * 2014-06-30 2021-12-21 恩特格里斯公司 利用钨及钴兼容性移除蚀刻后残余物的含水及半含水清洁剂
KR102255577B1 (ko) * 2014-08-25 2021-05-25 엘지디스플레이 주식회사 식각액 조성물
CN107078044B (zh) * 2014-11-13 2020-06-19 三菱瓦斯化学株式会社 抑制了钴的损伤的半导体元件的清洗液、和使用其的半导体元件的清洗方法
TWI639730B (zh) * 2015-02-13 2018-11-01 關東鑫林科技股份有限公司 Etching liquid composition and etching method using the same
US9976111B2 (en) 2015-05-01 2018-05-22 Versum Materials Us, Llc TiN hard mask and etch residual removal
JP6761166B2 (ja) * 2015-07-23 2020-09-23 セントラル硝子株式会社 ウェットエッチング方法及びエッチング液
WO2017019825A1 (en) 2015-07-29 2017-02-02 Ecolab Usa Inc. Heavy amine neutralizing agents for olefin or styrene production
TWI705132B (zh) * 2015-10-08 2020-09-21 日商三菱瓦斯化學股份有限公司 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法
TWI816635B (zh) * 2015-10-15 2023-10-01 日商三菱瓦斯化學股份有限公司 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法
WO2017167797A1 (en) * 2016-03-29 2017-10-05 Technic France Solution and method for etching titanium based materials
US10982129B2 (en) * 2016-08-05 2021-04-20 NuGeneration Technologies, LLC Composition and method for making converter-dissolver composition for dissolving metal sulfate scales from surfaces
EP3299323B1 (en) 2016-09-23 2020-04-01 Otis Elevator Company Secondary car operating panel for elevator cars
KR102160019B1 (ko) * 2016-09-29 2020-09-28 후지필름 가부시키가이샤 처리액 및 적층체의 처리 방법
WO2018067763A1 (en) 2016-10-06 2018-04-12 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulations for removing residues on semiconductor substrates
KR102770063B1 (ko) * 2016-11-29 2025-02-21 솔브레인 주식회사 식각용 조성물 및 식각용 조성물을 이용한 반도체 소자의 식각 방법
US10626353B2 (en) * 2017-02-10 2020-04-21 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulations
SG11201908616PA (en) * 2017-03-24 2019-10-30 Fujifilm Electronic Materials Usa Inc Cleaning compositions for removing residues on semiconductor substrates
WO2018181896A1 (ja) * 2017-03-31 2018-10-04 関東化學株式会社 チタン層またはチタン含有層のエッチング液組成物およびエッチング方法
JP6966570B2 (ja) * 2017-04-11 2021-11-17 インテグリス・インコーポレーテッド 化学機械研磨後配合物及び使用方法
JP7235336B2 (ja) * 2017-08-22 2023-03-08 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 洗浄組成物
JP7090625B2 (ja) * 2017-08-31 2022-06-24 富士フイルム株式会社 処理液、キット、基板の洗浄方法
KR101967157B1 (ko) 2017-11-06 2019-04-09 한국원자력연구원 전극-반도체간 쇼트키 접촉 구조를 가진 방사선 센서
IL274877B2 (en) 2017-12-08 2024-03-01 Basf Se A cleaning agent for removing residues after burning or after ash from a semiconductor substrate and a corresponding manufacturing process
KR20200089765A (ko) 2017-12-18 2020-07-27 엔테그리스, 아이엔씨. 원자 층 증착에 의해 도포되는 내화학약품성 다층 코팅
WO2019142788A1 (ja) * 2018-01-16 2019-07-25 株式会社トクヤマ 次亜塩素酸イオンを含む半導体ウェハの処理液
US11365379B2 (en) * 2018-01-25 2022-06-21 Merck Patent Gmbh Photoresist remover compositions
WO2019151141A1 (ja) * 2018-02-05 2019-08-08 富士フイルム株式会社 処理液、及び、処理方法
JP6799740B2 (ja) * 2018-03-23 2020-12-16 株式会社東芝 処理液及び処理方法
IL277275B2 (en) * 2018-03-28 2023-11-01 Fujifilm Electronic Mat Usa Inc cleaning products
JP7105084B2 (ja) * 2018-03-30 2022-07-22 ナガセケムテックス株式会社 エッチング液組成物
KR102799055B1 (ko) * 2018-04-27 2025-04-23 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 수성 조성물 및 이것을 이용한 세정방법
IL278257B2 (en) * 2018-04-27 2025-03-01 Mitsubishi Gas Chemical Co Aqueous cleaning solution and its use
CN112385018B (zh) * 2018-05-01 2025-02-25 应用材料公司 在选择性蚀刻工艺中提高选择性的方法
KR102346832B1 (ko) * 2018-05-23 2022-01-03 삼성에스디아이 주식회사 실리콘 질화막 식각용 조성물 및 이를 이용한 식각 방법
JP7128948B2 (ja) * 2018-07-06 2022-08-31 インテグリス・インコーポレーテッド 材料を選択的にエッチングするための改善
KR20210024187A (ko) 2018-07-20 2021-03-04 엔테그리스, 아이엔씨. 부식 억제제를 갖는 세정 조성물
US11085011B2 (en) * 2018-08-28 2021-08-10 Entegris, Inc. Post CMP cleaning compositions for ceria particles
US10896824B2 (en) * 2018-12-14 2021-01-19 Tokyo Electron Limited Roughness reduction methods for materials using illuminated etch solutions
WO2020123126A1 (en) * 2018-12-14 2020-06-18 Entegris, Inc. Ruthenium etching composition and method
SG11202107061TA (en) * 2019-01-11 2021-07-29 Versum Materials Us Llc Hafnium oxide corrosion inhibitor
CN113454267A (zh) * 2019-01-31 2021-09-28 富士胶片电子材料美国有限公司 蚀刻组合物
EP3926663A4 (en) * 2019-02-13 2022-12-21 Tokuyama Corporation SEMICONDUCTOR WAFER TREATMENT LIQUID WITH HYPOCHLORITIONS AND PH BUFFER
EP3938465B1 (en) * 2019-03-11 2025-07-09 Versum Materials US, LLC Etching solution and method for selectively removing silicon nitride during manufacture of a semiconductor device
WO2020210784A1 (en) 2019-04-12 2020-10-15 Ecolab Usa Inc. Antimicrobial multi-purpose cleaner and methods of making and using the same
US20220220421A1 (en) 2019-05-23 2022-07-14 Basf Se Composition and process for electively etching a hard mask and/or an etch-stop layer in the presence of layers of low-k materials, copper, cobalt and/or tungsten
KR102815121B1 (ko) * 2019-07-05 2025-06-04 후지필름 가부시키가이샤 조성물, 키트, 기판의 처리 방법
US11499099B2 (en) * 2019-09-10 2022-11-15 Fujifilm Electronic Materials U.S.A., Inc. Etching composition
KR102784165B1 (ko) 2019-09-27 2025-03-19 가부시끼가이샤 도꾸야마 루테늄의 반도체용 처리액 및 그 제조 방법
WO2021060234A1 (ja) * 2019-09-27 2021-04-01 株式会社トクヤマ ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法
KR20210092472A (ko) 2020-01-16 2021-07-26 동우 화인켐 주식회사 몰리브데늄 식각액 조성물 및 이를 이용한 패턴 형성 방법
KR102787836B1 (ko) 2020-02-07 2025-03-31 동우 화인켐 주식회사 금속막 식각액 조성물 및 이를 이용한 패턴 형성 방법
AT16977U3 (de) * 2020-02-20 2021-03-15 4Tex Gmbh Verfahren zum Behandeln von Substraten mit Chemikalien
JPWO2021176913A1 (enExample) * 2020-03-04 2021-09-10
CN113433807B (zh) * 2020-03-23 2024-08-09 上海新阳半导体材料股份有限公司 离子注入光刻胶清洗液、其制备方法及应用
CN113430072B (zh) * 2020-03-23 2024-05-07 上海新阳半导体材料股份有限公司 移除硬遮罩的钴兼容性半水基清洗液、其制备方法及应用
KR102339685B1 (ko) * 2020-03-25 2021-12-16 주식회사 이엔에프테크놀로지 실리콘 질화막 식각 조성물
CN115428129A (zh) * 2020-04-14 2022-12-02 三菱瓦斯化学株式会社 钛和/或钛合金的蚀刻液、使用该蚀刻液的钛和/或钛合金的蚀刻方法、以及使用该蚀刻液的基板的制造方法
JP7739305B2 (ja) * 2020-09-04 2025-09-16 花王株式会社 基板の洗浄方法
TWI824299B (zh) * 2020-09-22 2023-12-01 美商恩特葛瑞斯股份有限公司 蝕刻劑組合物
KR102862941B1 (ko) * 2020-09-22 2025-09-22 동우 화인켐 주식회사 실리콘 식각액 조성물 및 이를 사용한 패턴 형성 방법
JP2024517606A (ja) * 2021-04-16 2024-04-23 インテグリス・インコーポレーテッド 洗浄組成物
CN113549462A (zh) * 2021-06-16 2021-10-26 江阴润玛电子材料股份有限公司 一种微电子用超纯氟化铵蚀刻液及其制备方法
JP7744188B2 (ja) * 2021-09-16 2025-09-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
WO2023069409A1 (en) * 2021-10-20 2023-04-27 Entegris, Inc. Selective wet etch composition and method
WO2023172378A2 (en) * 2022-03-10 2023-09-14 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
WO2023204141A1 (ja) * 2022-04-20 2023-10-26 東京応化工業株式会社 エッチング用組成物、それを用いたエッチング方法および電子部品の製造方法
IL318011A (en) 2022-07-01 2025-02-01 Mitsubishi Gas Chemical Co Composition for cleaning a semiconductor substrate, method for cleaning semiconductor substrates, and method for manufacturing semiconductor substrates
CN115710536B (zh) * 2022-11-11 2024-03-08 上海新阳半导体材料股份有限公司 一种清洗液的制备方法
CN116103657A (zh) * 2023-01-17 2023-05-12 中国科学院上海微系统与信息技术研究所 一种用于锗硒及其掺杂合金的化学机械抛光组合物
WO2025063222A1 (ja) * 2023-09-21 2025-03-27 三菱瓦斯化学株式会社 組成物およびキット、並びにこれらを用いたレジスト除去方法および電子基板の製造方法
CN119913513A (zh) * 2023-10-23 2025-05-02 安集微电子科技（上海）股份有限公司 一种蚀刻组合物及其用途
WO2025127048A1 (ja) * 2023-12-13 2025-06-19 三菱瓦斯化学株式会社 半導体基板洗浄用組成物、半導体基板の洗浄方法、及び半導体基板の製造方法
WO2025220432A1 (ja) * 2024-04-15 2025-10-23 東京応化工業株式会社 処理液、半導体基板の処理方法、及び半導体デバイスの製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020106975A1 (en) * 1999-06-24 2002-08-08 Micron Technology, Inc. Fixed-abrasive chemical-mechanical planarization of titanium nitride
CN1735671A (zh) * 2002-12-10 2006-02-15 高级技术材料公司 用于铜膜平面化的钝化化学机械抛光组合物
KR20080072308A (ko) * 2007-02-02 2008-08-06 동우 화인켐 주식회사 실리콘 산화막에 대한 선택적 에칭액 조성물
CN102217042A (zh) * 2008-10-02 2011-10-12 高级技术材料公司 表面活性剂/消泡剂混合物用于增强硅基板的金属负载及表面钝化的应用
WO2012048079A2 (en) * 2010-10-06 2012-04-12 Advanced Technology Materials, Inc. Composition and process for selectively etching metal nitrides
CN103003923A (zh) * 2010-07-16 2013-03-27 高级技术材料公司 用于移除蚀刻后残余物的水性清洁剂

Family Cites Families (156)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE457647B (sv) 1987-06-24 1989-01-16 Eka Nobel Ab Saett vid blekning av material med ditionitloesning
US5209858A (en) 1991-02-06 1993-05-11 E. I. Du Pont De Nemours And Company Stabilization of choline and its derivatives against discoloration
US5320709A (en) 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
JPH11510219A (ja) 1995-12-19 1999-09-07 エフエスアイ インターナショナル インコーポレイテッド スプレー・プロセッサを用いる金属膜の無電解めっき
US5702075A (en) 1996-01-31 1997-12-30 David Lehrman Automatically collapsible support for an electrical cord for use with an ironing board
ES2160892T3 (es) * 1996-05-30 2001-11-16 Nalco Chemical Co Uso de una mezcla de tensioactivos para inhibir la corrosion.
US6323168B1 (en) 1996-07-03 2001-11-27 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US7534752B2 (en) 1996-07-03 2009-05-19 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US6224785B1 (en) 1997-08-29 2001-05-01 Advanced Technology Materials, Inc. Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates
US6896826B2 (en) 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6755989B2 (en) 1997-01-09 2004-06-29 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US5993685A (en) 1997-04-02 1999-11-30 Advanced Technology Materials Planarization composition for removing metal films
US6322600B1 (en) 1997-04-23 2001-11-27 Advanced Technology Materials, Inc. Planarization compositions and methods for removing interlayer dielectric films
US6346741B1 (en) 1997-11-20 2002-02-12 Advanced Technology Materials, Inc. Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same
US5976928A (en) 1997-11-20 1999-11-02 Advanced Technology Materials, Inc. Chemical mechanical polishing of FeRAM capacitors
US6280651B1 (en) 1998-12-16 2001-08-28 Advanced Technology Materials, Inc. Selective silicon oxide etchant formulation including fluoride salt, chelating agent, and glycol solvent
US6211126B1 (en) 1997-12-23 2001-04-03 Advanced Technology Materials, Inc. Formulations including a 1, 3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates
US6306807B1 (en) 1998-05-18 2001-10-23 Advanced Technology Materials, Inc. Boric acid containing compositions for stripping residues from semiconductor substrates
US6875733B1 (en) 1998-10-14 2005-04-05 Advanced Technology Materials, Inc. Ammonium borate containing compositions for stripping residues from semiconductor substrates
US6395194B1 (en) 1998-12-18 2002-05-28 Intersurface Dynamics Inc. Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same
US6344432B1 (en) 1999-08-20 2002-02-05 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
TW467802B (en) 1999-10-12 2001-12-11 Hunatech Co Ltd Conditioner for polishing pad and method for manufacturing the same
JP2001135601A (ja) * 1999-11-09 2001-05-18 Speedfam Co Ltd 半導体デバイス平坦化の研磨方法
US6194366B1 (en) 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6492308B1 (en) 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6723691B2 (en) 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
JP3515041B2 (ja) 2000-03-13 2004-04-05 沖電気工業株式会社 半導体素子の製造方法
US6409781B1 (en) 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
US6566315B2 (en) 2000-12-08 2003-05-20 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
JP2002231666A (ja) * 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US6627587B2 (en) 2001-04-19 2003-09-30 Esc Inc. Cleaning compositions
US7029373B2 (en) 2001-08-14 2006-04-18 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6800218B2 (en) 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
US6802983B2 (en) 2001-09-17 2004-10-12 Advanced Technology Materials, Inc. Preparation of high performance silica slurry using a centrifuge
US7557073B2 (en) 2001-12-31 2009-07-07 Advanced Technology Materials, Inc. Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist
US7030168B2 (en) 2001-12-31 2006-04-18 Advanced Technology Materials, Inc. Supercritical fluid-assisted deposition of materials on semiconductor substrates
US7119418B2 (en) 2001-12-31 2006-10-10 Advanced Technology Materials, Inc. Supercritical fluid-assisted deposition of materials on semiconductor substrates
US7326673B2 (en) 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
US6773873B2 (en) 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
US6698619B2 (en) 2002-05-03 2004-03-02 Advanced Technology Materials, Inc. Returnable and reusable, bag-in-drum fluid storage and dispensing container system
US7188644B2 (en) 2002-05-03 2007-03-13 Advanced Technology Materials, Inc. Apparatus and method for minimizing the generation of particles in ultrapure liquids
US6849200B2 (en) 2002-07-23 2005-02-01 Advanced Technology Materials, Inc. Composition and process for wet stripping removal of sacrificial anti-reflective material
US6943139B2 (en) 2002-10-31 2005-09-13 Advanced Technology Materials, Inc. Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations
US20060019850A1 (en) 2002-10-31 2006-01-26 Korzenski Michael B Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations
US7485611B2 (en) 2002-10-31 2009-02-03 Advanced Technology Materials, Inc. Supercritical fluid-based cleaning compositions and methods
US6989358B2 (en) 2002-10-31 2006-01-24 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for removal of photoresists
US7223352B2 (en) 2002-10-31 2007-05-29 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal
US7011716B2 (en) 2003-04-29 2006-03-14 Advanced Technology Materials, Inc. Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products
US8236485B2 (en) * 2002-12-20 2012-08-07 Advanced Technology Materials, Inc. Photoresist removal
US6735978B1 (en) 2003-02-11 2004-05-18 Advanced Technology Materials, Inc. Treatment of supercritical fluid utilized in semiconductor manufacturing applications
US20060249482A1 (en) * 2003-05-12 2006-11-09 Peter Wrschka Chemical mechanical polishing compositions for step-ll copper line and other associated materials and method of using same
US7736405B2 (en) 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US7119052B2 (en) 2003-06-24 2006-10-10 Advanced Technology Materials, Inc. Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers
US20050025973A1 (en) 2003-07-25 2005-02-03 Slutz David E. CVD diamond-coated composite substrate containing a carbide-forming material and ceramic phases and method for making same
US7335239B2 (en) 2003-11-17 2008-02-26 Advanced Technology Materials, Inc. Chemical mechanical planarization pad
US20050118832A1 (en) 2003-12-01 2005-06-02 Korzenski Michael B. Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
US7888301B2 (en) 2003-12-02 2011-02-15 Advanced Technology Materials, Inc. Resist, barc and gap fill material stripping chemical and method
US20050145311A1 (en) 2003-12-30 2005-07-07 Walker Elizabeth L. Method for monitoring surface treatment of copper containing devices
WO2005083523A1 (en) * 2004-02-11 2005-09-09 Mallinckrodt Baker Inc. Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof
US7553803B2 (en) 2004-03-01 2009-06-30 Advanced Technology Materials, Inc. Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions
US8338087B2 (en) 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
US20050227482A1 (en) 2004-03-24 2005-10-13 Korzenski Michael B Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers
WO2006005692A1 (en) 2004-07-09 2006-01-19 Akzo Nobel N.V. Composition comprising choline hydroxide and process for preparing the same
JP4145273B2 (ja) 2004-07-14 2008-09-03 株式会社ノリタケスーパーアブレーシブ Ｃｍｐパッドコンディショナー
US20060063687A1 (en) 2004-09-17 2006-03-23 Minsek David W Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate
US20060148666A1 (en) 2004-12-30 2006-07-06 Advanced Technology Materials Inc. Aqueous cleaner with low metal etch rate
US20060154186A1 (en) 2005-01-07 2006-07-13 Advanced Technology Materials, Inc. Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
US7923423B2 (en) 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7365045B2 (en) 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
WO2006110279A1 (en) * 2005-04-08 2006-10-19 Sachem, Inc. Selective wet etching of metal nitrides
WO2006110645A2 (en) 2005-04-11 2006-10-19 Advanced Technology Materials, Inc. Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices
US8114220B2 (en) 2005-04-15 2012-02-14 Advanced Technology Materials, Inc. Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
US20070251551A1 (en) 2005-04-15 2007-11-01 Korzenski Michael B Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems
TW200726858A (en) 2005-04-15 2007-07-16 Advanced Tech Materials Apparatus and method for supercritical fluid removal or deposition processes
JP2008543060A (ja) 2005-05-26 2008-11-27 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅不活性化化学機械研磨後洗浄組成物及び使用方法
WO2006133249A2 (en) 2005-06-06 2006-12-14 Advanced Technology Materials, Inc. Integrated chemical mechanical polishing composition and process for single platen processing
KR101477455B1 (ko) 2005-06-07 2014-12-29 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속 및 유전체 상용성 희생 반사 방지 코팅 세정 및 제거 조성물
JP2008547202A (ja) 2005-06-13 2008-12-25 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 金属ケイ化物の形成後の金属または金属合金の選択的な除去のための組成物および方法
EP1893355A1 (en) 2005-06-16 2008-03-05 Advanced Technology Materials, Inc. Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers
EP1929512A2 (en) 2005-08-05 2008-06-11 Advanced Technology Materials, Inc. High throughput chemical mechanical polishing composition for metal film planarization
KR100685738B1 (ko) * 2005-08-08 2007-02-26 삼성전자주식회사 절연 물질 제거용 조성물, 이를 이용한 절연막의 제거 방법및 기판의 재생 방법
WO2007027522A2 (en) 2005-08-29 2007-03-08 Advanced Technology Materials, Inc. Composition and method for removing thick film photoresist
CN101366107B (zh) 2005-10-05 2011-08-24 高级技术材料公司 用于除去蚀刻后残余物的含水氧化清洗剂
CN101496146A (zh) 2005-10-05 2009-07-29 高级技术材料公司 选择性蚀刻栅极隔片氧化物材料的组合物和方法
EP1945748A4 (en) 2005-10-13 2009-01-07 Advanced Tech Materials PHOTORESIN REMOVAL AND / OR SACRIFICIAL ANTIREFLECTION COATING COMPOSITION COMPATIBLE WITH METALS
US20090301996A1 (en) 2005-11-08 2009-12-10 Advanced Technology Materials, Inc. Formulations for removing cooper-containing post-etch residue from microelectronic devices
AU2006340825A1 (en) * 2005-11-09 2007-10-04 Advanced Technology Materials, Inc. Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
TW200734448A (en) 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
US20070225186A1 (en) 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
US20080076688A1 (en) 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
WO2008036823A2 (en) 2006-09-21 2008-03-27 Advanced Technology Materials, Inc. Uric acid additive for cleaning formulations
WO2008039730A1 (en) 2006-09-25 2008-04-03 Advanced Technology Materials, Inc. Compositions and methods for the removal of photoresist for a wafer rework application
US20080125342A1 (en) 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
CN101605869B (zh) 2006-12-21 2014-03-05 高级技术材料公司 选择性除去四氮化三硅的组合物和方法
KR101449774B1 (ko) 2006-12-21 2014-10-14 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 에칭 후 잔류물의 제거를 위한 액체 세정제
JP2008177180A (ja) * 2007-01-16 2008-07-31 Ebara Corp 配線基板研磨用前処理液、研磨方法、配線基板製造方法及び配線基板製造装置
US20100087065A1 (en) 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
TWI516573B (zh) 2007-02-06 2016-01-11 安堤格里斯公司 選擇性移除ＴｉＳｉＮ之組成物及方法
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
KR20100017695A (ko) 2007-05-09 2010-02-16 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 재료 혼합과 분배를 위한 시스템 및 방법
TW200918664A (en) * 2007-06-13 2009-05-01 Advanced Tech Materials Wafer reclamation compositions and methods
KR20100051839A (ko) 2007-08-02 2010-05-18 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 마이크로전자 장치로부터 잔사를 제거하기 위한 플루오라이드 비-함유 조성물
WO2009026324A2 (en) 2007-08-20 2009-02-26 Advanced Technology Materials, Inc. Composition and method for removing ion-implanted photoresist
JP2009075285A (ja) 2007-09-20 2009-04-09 Fujifilm Corp 半導体デバイスの剥離液、及び、剥離方法
EP2227319A2 (en) 2007-11-14 2010-09-15 Advanced Technology Materials, Inc. Solvent-free synthesis of soluble nanocrystals
TW200934865A (en) 2007-11-30 2009-08-16 Advanced Tech Materials Formulations for cleaning memory device structures
TWI591158B (zh) 2008-03-07 2017-07-11 恩特葛瑞斯股份有限公司 非選擇性氧化物蝕刻濕清潔組合物及使用方法
US20090253072A1 (en) 2008-04-01 2009-10-08 Petruska Melissa A Nanoparticle reversible contrast enhancement material and method
KR20100133507A (ko) 2008-05-01 2010-12-21 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 고밀도 주입된 레지스트의 제거를 위한 저 ｐｈ 혼합물
TW201013338A (en) 2008-08-04 2010-04-01 Advanced Tech Materials Environmentally friendly polymer stripping compositions
WO2010048139A2 (en) * 2008-10-21 2010-04-29 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
EP2391700A4 (en) 2009-01-28 2016-08-31 Entegris Inc IN SITU CLEANING FORMULATIONS OF LITHOGRAPHIC APPARATUS
WO2010086745A1 (en) 2009-02-02 2010-08-05 Atmi Taiwan Co., Ltd. Method of etching lanthanum-containing oxide layers
WO2010091045A2 (en) 2009-02-05 2010-08-12 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of polymers and other organic material from a surface
US8754021B2 (en) 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
US8367555B2 (en) 2009-12-11 2013-02-05 International Business Machines Corporation Removal of masking material
WO2011094568A2 (en) 2010-01-29 2011-08-04 Advanced Technology Materials, Inc. Cleaning agent for semiconductor provided with metal wiring
JP5858597B2 (ja) 2010-01-29 2016-02-10 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド タングステン配線半導体用洗浄剤
KR101749086B1 (ko) 2010-04-15 2017-06-21 엔테그리스, 아이엔씨. 폐 인쇄 회로판의 재순환 방법
JP2012021151A (ja) 2010-06-16 2012-02-02 Sanyo Chem Ind Ltd 銅配線半導体用洗浄剤
JP6101421B2 (ja) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
KR20130099948A (ko) 2010-08-20 2013-09-06 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 E-폐기물로부터 귀금속 및 베이스 금속을 회수하는 지속가능한 방법
US20130280123A1 (en) 2010-08-27 2013-10-24 Advanced Technology Materials, Inc. Method for preventing the collapse of high aspect ratio structures during drying
KR101891363B1 (ko) 2010-10-13 2018-08-24 엔테그리스, 아이엔씨. 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법
KR102064487B1 (ko) 2011-01-13 2020-01-10 엔테그리스, 아이엔씨. 세륨-함유 용액에 의해 발생된 입자의 제거를 위한 배합물
JP2012186470A (ja) 2011-02-18 2012-09-27 Sanyo Chem Ind Ltd 銅配線半導体用洗浄剤
WO2012154498A2 (en) 2011-05-06 2012-11-15 Advanced Technology Materials, Inc. Removal of metal impurities from silicon surfaces for solar cell and semiconductor applications
JP2012251026A (ja) 2011-05-31 2012-12-20 Sanyo Chem Ind Ltd 半導体用洗浄剤
WO2012174518A2 (en) 2011-06-16 2012-12-20 Advanced Technology Materials, Inc. Compositions and methods for selectively etching silicon nitride
CN103620861B (zh) 2011-06-21 2017-02-15 恩特格里斯公司 从锂离子电池回收锂钴氧化物的方法
KR101776923B1 (ko) * 2011-08-05 2017-09-11 삼성디스플레이 주식회사 식각액 조성물, 이를 이용한 금속 패턴의 형성 방법 및 표시 기판의 제조 방법
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅または銅合金用エッチング液
CN105869997A (zh) 2011-10-21 2016-08-17 安格斯公司 无胺cmp后组合物及其使用方法
US8618036B2 (en) 2011-11-14 2013-12-31 International Business Machines Corporation Aqueous cerium-containing solution having an extended bath lifetime for removing mask material
CA2855935A1 (en) 2011-11-22 2013-05-30 Taminco N.V. Stabilized choline solutions and methods for preparing the same
ES2619568T3 (es) 2011-12-15 2017-06-26 Entegris Inc. Aparato y método de extracción de metales de soldadura durante el reciclaje de equipo eléctrico y electrónico de desecho
WO2013101907A1 (en) * 2011-12-28 2013-07-04 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
KR102105381B1 (ko) 2012-02-15 2020-04-29 엔테그리스, 아이엔씨. 조성물을 이용한 cmp-후 제거 방법 및 그의 이용 방법
US20150075570A1 (en) 2012-03-12 2015-03-19 Entegris, Inc. Methods for the selective removal of ashed spin-on glass
WO2013138278A1 (en) 2012-03-12 2013-09-19 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
KR20140139565A (ko) 2012-03-18 2014-12-05 인티그리스, 인코포레이티드 개선된 장벽층 상용성 및 세정 성능을 가진 cmp-후 배합물
WO2013152260A1 (en) 2012-04-06 2013-10-10 Advanced Technology Materials, Inc. Removal of lead from solid materials
CN103874679A (zh) 2012-04-13 2014-06-18 亨斯迈石油化学有限责任公司 使用新颖的胺来稳定化季三烷基烷醇胺
US20130295712A1 (en) 2012-05-03 2013-11-07 Advanced Technology Materials, Inc. Methods of texturing surfaces for controlled reflection
WO2013170130A1 (en) 2012-05-11 2013-11-14 Advanced Technology Materials, Inc. Formulations for wet etching nipt during silicide fabrication
EP2850651A4 (en) 2012-05-18 2016-03-09 Entegris Inc AQUEOUS CLEANING SOLUTION HAVING LOW COPPER ATTACK SPEED FOR MORE EFFICIENT REMOVAL OF ORGANIC RESIDUES
EP2850495A4 (en) 2012-05-18 2016-01-20 Entegris Inc COMPOSITION AND METHOD FOR REMOVING PHOTOLACK FROM A SURFACE WITH TITANNITRIDE
JP6063206B2 (ja) 2012-10-22 2017-01-18 富士フイルム株式会社 エッチング液、これを用いたエッチング方法及び半導体素子の製造方法
WO2014089196A1 (en) 2012-12-05 2014-06-12 Advanced Technology Materials, Inc. Compositions for cleaning iii-v semiconductor materials and methods of using same
WO2014138064A1 (en) 2013-03-04 2014-09-12 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
US9520617B2 (en) 2013-03-14 2016-12-13 Advanced Technology Materials, Inc. Sulfolane mixtures as ambient aprotic polar solvents
TW201500542A (zh) 2013-04-22 2015-01-01 Advanced Tech Materials 銅清洗及保護配方
US20160122696A1 (en) 2013-05-17 2016-05-05 Advanced Technology Materials, Inc. Compositions and methods for removing ceria particles from a surface
JP6723152B2 (ja) 2013-06-06 2020-07-15 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物及び方法
CA2943992A1 (en) 2014-02-25 2015-09-03 Entegris, Inc. Wet based formulations for the selective removal of noble metals

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020106975A1 (en) * 1999-06-24 2002-08-08 Micron Technology, Inc. Fixed-abrasive chemical-mechanical planarization of titanium nitride
CN1735671A (zh) * 2002-12-10 2006-02-15 高级技术材料公司 用于铜膜平面化的钝化化学机械抛光组合物
KR20080072308A (ko) * 2007-02-02 2008-08-06 동우 화인켐 주식회사 실리콘 산화막에 대한 선택적 에칭액 조성물
CN102217042A (zh) * 2008-10-02 2011-10-12 高级技术材料公司 表面活性剂/消泡剂混合物用于增强硅基板的金属负载及表面钝化的应用
CN103003923A (zh) * 2010-07-16 2013-03-27 高级技术材料公司 用于移除蚀刻后残余物的水性清洁剂
WO2012048079A2 (en) * 2010-10-06 2012-04-12 Advanced Technology Materials, Inc. Composition and process for selectively etching metal nitrides

Cited By (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10920141B2 (en) 2013-06-06 2021-02-16 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
CN109791377A (zh) * 2016-09-09 2019-05-21 花王株式会社 树脂掩膜剥离用洗涤剂组合物
CN107881032A (zh) * 2016-09-30 2018-04-06 细美事有限公司 无水基板清洁组合物、基板处理方法和基板处理装置
US10773281B2 (en) 2016-09-30 2020-09-15 Semes Co., Ltd. Anhydrous substrate cleaning composition, substrate treating method, and substrate treating apparatus
CN108122752B (zh) * 2016-11-29 2022-12-27 三星电子株式会社 蚀刻组合物和通过使用其制造半导体器件的方法
CN108122752A (zh) * 2016-11-29 2018-06-05 三星电子株式会社 蚀刻组合物和通过使用其制造半导体器件的方法
CN108231573A (zh) * 2016-12-14 2018-06-29 三星电子株式会社 蚀刻组合物及通过使用其制造半导体器件的方法
CN108231573B (zh) * 2016-12-14 2024-01-16 三星电子株式会社 蚀刻组合物及通过使用其制造半导体器件的方法
CN110177903A (zh) * 2017-01-17 2019-08-27 恩特格里斯公司 高阶节点工艺后端处理的蚀刻后残留物去除
CN108929633B (zh) * 2017-05-25 2021-07-06 富士胶片电子材料美国有限公司 用于钴应用的化学机械抛光浆料
CN108929633A (zh) * 2017-05-25 2018-12-04 富士胶片平面解决方案有限公司 用于钴应用的化学机械抛光浆料
US10676646B2 (en) 2017-05-25 2020-06-09 Fujifilm Electronic Materials U.S.A., Inc. Chemical mechanical polishing slurry for cobalt applications
CN107229193B (zh) * 2017-07-25 2019-04-23 上海新阳半导体材料股份有限公司 一种清洗剂、其制备方法和应用
CN107229193A (zh) * 2017-07-25 2017-10-03 上海新阳半导体材料股份有限公司 一种清洗剂、其制备方法和应用
CN111465716A (zh) * 2017-12-08 2020-07-28 巴斯夫欧洲公司 用于在低-k材料、铜和/或钴的层的存在下选择性蚀刻包含铝化合物的层的组合物及方法
CN111565870A (zh) * 2018-01-26 2020-08-21 日清工程株式会社 铜微粒子
CN110240907A (zh) * 2018-03-09 2019-09-17 弗萨姆材料美国有限责任公司 用于在半导体器件制造期间从硅-锗/锗叠层选择性除去硅-锗合金的蚀刻溶液
CN110240907B (zh) * 2018-03-09 2021-09-17 弗萨姆材料美国有限责任公司 用于在半导体器件制造期间从硅-锗/锗叠层选择性除去硅-锗合金的蚀刻溶液
US10934484B2 (en) 2018-03-09 2021-03-02 Versum Materials Us, Llc Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ germanium stack during manufacture of a semiconductor device
CN110272742A (zh) * 2018-03-16 2019-09-24 弗萨姆材料美国有限责任公司 用于钨字线凹进的蚀刻溶液
CN110284139A (zh) * 2018-03-19 2019-09-27 三星显示有限公司 蚀刻剂组合物和使用其制造金属图案和阵列基板的方法
CN110284139B (zh) * 2018-03-19 2022-05-27 三星显示有限公司 蚀刻剂组合物和使用其制造金属图案和阵列基板的方法
CN111936936A (zh) * 2018-04-04 2020-11-13 巴斯夫欧洲公司 用于去除灰化后残留物和/或用于氧化蚀刻含TiN层料或掩模的含咪唑烷硫酮组合物
CN111936936B (zh) * 2018-04-04 2025-02-21 巴斯夫欧洲公司 用于去除灰化后残留物和/或用于氧化蚀刻含TiN层料或掩模的含咪唑烷硫酮组合物
CN112041970A (zh) * 2018-04-27 2020-12-04 三菱瓦斯化学株式会社 水性组合物和使用其的清洗方法
CN110484919A (zh) * 2018-05-14 2019-11-22 深圳市裕展精密科技有限公司 退镀液及其退除含钛膜层的方法、及表面形成有含钛膜层的基材的退镀方法
CN109161358A (zh) * 2018-07-25 2019-01-08 佛山腾鲤新能源科技有限公司 一种导电胶的制备方法
CN110777381A (zh) * 2018-07-26 2020-02-11 弗萨姆材料美国有限责任公司 用于TiN硬掩模去除和蚀刻残留物清洁的组合物
US12112959B2 (en) 2018-09-04 2024-10-08 Tokyo Electron Limited Processing systems and platforms for roughness reduction of materials using illuminated etch solutions
CN113302730B (zh) * 2018-12-14 2024-11-22 东京毅力科创株式会社 使用照射刻蚀溶液来降低材料粗糙度的加工系统和平台
CN113302730A (zh) * 2018-12-14 2021-08-24 东京毅力科创株式会社 使用照射刻蚀溶液来降低材料粗糙度的加工系统和平台
CN109594088A (zh) * 2018-12-29 2019-04-09 陕西宝成航空仪表有限责任公司 氮化钛或氮化铝钛膜层的退除液及制备方法和退除方法
TWI748369B (zh) * 2019-03-11 2021-12-01 美商慧盛材料美國責任有限公司 用於鋁氮化物的蝕刻溶液及方法
CN113574159A (zh) * 2019-03-14 2021-10-29 日产化学株式会社 清洗剂组合物以及清洗方法
CN114144508A (zh) * 2019-06-03 2022-03-04 富士胶片电子材料美国有限公司 蚀刻组合物
CN112080279A (zh) * 2019-06-12 2020-12-15 关东鑫林科技股份有限公司 蚀刻组合物
CN112442372B (zh) * 2019-09-04 2024-03-29 Sk新技术株式会社 蚀刻组合物，使用其蚀刻半导体器件的绝缘膜的方法以及制备半导体器件的方法
CN112442372A (zh) * 2019-09-04 2021-03-05 Sk新技术株式会社 蚀刻组合物，使用其蚀刻半导体器件的绝缘膜的方法以及制备半导体器件的方法
CN115210339A (zh) * 2020-03-04 2022-10-18 弗萨姆材料美国有限责任公司 用于氮化钛和钼导电金属线的蚀刻溶液
CN113430066A (zh) * 2020-03-23 2021-09-24 上海新阳半导体材料股份有限公司 用于选择性移除硬遮罩的清洗组合物、其制备方法及应用
CN113430066B (zh) * 2020-03-23 2024-04-19 上海新阳半导体材料股份有限公司 用于选择性移除硬遮罩的清洗组合物、其制备方法及应用
CN111430799A (zh) * 2020-04-22 2020-07-17 上海纳米技术及应用国家工程研究中心有限公司 一种用于镍锰酸锂正极材料的高压电解液
CN111430799B (zh) * 2020-04-22 2023-02-14 上海纳米技术及应用国家工程研究中心有限公司 一种用于镍锰酸锂正极材料的高压电解液
CN113667552A (zh) * 2020-05-15 2021-11-19 安集微电子科技（上海）股份有限公司 一种用于铜大马士革工艺的清洗液
CN111850564A (zh) * 2020-07-16 2020-10-30 桂林理工大学 一种钛化物膜层退镀液及退镀方法
CN116057208A (zh) * 2020-08-07 2023-05-02 株式会社德山 半导体晶片用处理液
CN116096837A (zh) * 2020-08-13 2023-05-09 恩特格里斯公司 氮化物蚀刻剂组合物和方法
CN116235282A (zh) * 2020-09-29 2023-06-06 三菱瓦斯化学株式会社 半导体基板清洗用组合物和清洗方法
CN112540515A (zh) * 2020-12-16 2021-03-23 江苏艾森半导体材料股份有限公司 一种光刻胶去胶液及其制备方法和应用
CN112540515B (zh) * 2020-12-16 2023-11-21 江苏艾森半导体材料股份有限公司 一种光刻胶去胶液及其制备方法和应用
CN113186043A (zh) * 2021-04-27 2021-07-30 上海新阳半导体材料股份有限公司 一种含氟清洗液组合物及其应用
CN113161234B (zh) * 2021-04-27 2023-02-17 上海新阳半导体材料股份有限公司 一种含氟清洗液组合物的应用
CN113150884A (zh) * 2021-04-27 2021-07-23 上海新阳半导体材料股份有限公司 一种含氟清洗液组合物的制备方法
CN113161234A (zh) * 2021-04-27 2021-07-23 上海新阳半导体材料股份有限公司 一种含氟清洗液组合物的应用
CN117425717A (zh) * 2021-05-12 2024-01-19 恩特格里斯公司 选择性蚀刻剂组合物及方法
CN114369462A (zh) * 2021-12-16 2022-04-19 湖北兴福电子材料有限公司 一种选择性蚀刻氮化钛及钨的蚀刻液
CN115044376B (zh) * 2022-06-30 2023-12-29 湖北兴福电子材料股份有限公司 一种掺钪氮化铝蚀刻液及其应用
CN115011347B (zh) * 2022-06-30 2023-12-29 湖北兴福电子材料股份有限公司 一种氮化铝和钨的选择性蚀刻液
CN115044376A (zh) * 2022-06-30 2022-09-13 湖北兴福电子材料有限公司 一种掺钪氮化铝蚀刻液及其应用
CN115011347A (zh) * 2022-06-30 2022-09-06 湖北兴福电子材料有限公司 一种氮化铝和钨的选择性蚀刻液
CN114989825A (zh) * 2022-06-30 2022-09-02 湖北兴福电子材料有限公司 一种掺钪氮化铝和钨的选择性蚀刻液
CN115763494A (zh) * 2022-11-16 2023-03-07 Tcl华星光电技术有限公司 显示面板及其制作方法、蚀刻液组合物
CN116948647A (zh) * 2023-06-29 2023-10-27 浙江奥首材料科技有限公司 一种氮化物半导体蚀刻液、其制备方法与用途

Also Published As

Publication number Publication date
CN111394100A (zh) 2020-07-10
TWI651396B (zh) 2019-02-21
SG10201708364XA (en) 2017-11-29
EP3004287A4 (en) 2017-06-21
KR20160014714A (ko) 2016-02-11
JP6723152B2 (ja) 2020-07-15
KR102338550B1 (ko) 2021-12-14
SG11201509933QA (en) 2016-01-28
EP3004287B1 (en) 2021-08-18
JP2016527707A (ja) 2016-09-08
TW201504397A (zh) 2015-02-01
JP2019134168A (ja) 2019-08-08
US10920141B2 (en) 2021-02-16
WO2014197808A1 (en) 2014-12-11
EP3004287A1 (en) 2016-04-13
US20160130500A1 (en) 2016-05-12

Similar Documents

Publication Publication Date Title
JP6723152B2 (ja) 窒化チタンを選択的にエッチングするための組成物及び方法
CN104145324B (zh) 用于选择性蚀刻氮化钛的组合物和方法
CN105102584B (zh) 用于选择性蚀刻氮化钛的组合物和方法
KR102338526B1 (ko) Cu/W 호환성을 갖는, 금속 하드 마스크 및 에칭-후 잔여물을 제거하기 위한 수성 제형
JP7507309B2 (ja) 窒化物エッチング剤組成物及び方法
WO2016042408A2 (en) Compositions for etching titanium nitride having compatability with silicon germanide and tungsten

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20161008

Address after: Massachusetts, USA

Applicant after: MYKROLIS Corp.

Address before: American Connecticut

Applicant before: Advanced Technology Materials, Inc.

CB02 Change of applicant information

Address after: Massachusetts, USA

Applicant after: Entergris Co.

Address before: Massachusetts, USA

Applicant before: MYKROLIS Corp.

COR Change of bibliographic data
RJ01 Rejection of invention patent application after publication

Application publication date: 20160615

RJ01 Rejection of invention patent application after publication