CN110177903A - 高阶节点工艺后端处理的蚀刻后残留物去除 - Google Patents
高阶节点工艺后端处理的蚀刻后残留物去除 Download PDFInfo
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- CN110177903A CN110177903A CN201880006796.8A CN201880006796A CN110177903A CN 110177903 A CN110177903 A CN 110177903A CN 201880006796 A CN201880006796 A CN 201880006796A CN 110177903 A CN110177903 A CN 110177903A
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- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 1
- 235000018417 cysteine Nutrition 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- BJAJDJDODCWPNS-UHFFFAOYSA-N dotp Chemical compound O=C1N2CCOC2=NC2=C1SC=C2 BJAJDJDODCWPNS-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 description 1
- 229960004585 etidronic acid Drugs 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229940097043 glucuronic acid Drugs 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 description 1
- 235000004554 glutamine Nutrition 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 description 1
- 125000003707 hexyloxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 1
- 235000014304 histidine Nutrition 0.000 description 1
- NPZTUJOABDZTLV-UHFFFAOYSA-N hydroxybenzotriazole Substances O=C1C=CC=C2NNN=C12 NPZTUJOABDZTLV-UHFFFAOYSA-N 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- SHXXPRJOPFJRHA-UHFFFAOYSA-K iron(iii) fluoride Chemical compound F[Fe](F)F SHXXPRJOPFJRHA-UHFFFAOYSA-K 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- DJQJFMSHHYAZJD-UHFFFAOYSA-N lidofenin Chemical compound CC1=CC=CC(C)=C1NC(=O)CN(CC(O)=O)CC(O)=O DJQJFMSHHYAZJD-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
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- SRVINXWCFNHIQZ-UHFFFAOYSA-K manganese(iii) fluoride Chemical compound [F-].[F-].[F-].[Mn+3] SRVINXWCFNHIQZ-UHFFFAOYSA-K 0.000 description 1
- 150000001455 metallic ions Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
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- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- HIQXJRBKNONWAH-UHFFFAOYSA-N methylidenephosphane Chemical compound P=C HIQXJRBKNONWAH-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- LXPCOISGJFXEJE-UHFFFAOYSA-N oxifentorex Chemical compound C=1C=CC=CC=1C[N+](C)([O-])C(C)CC1=CC=CC=C1 LXPCOISGJFXEJE-UHFFFAOYSA-N 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 1
- 229960005152 pentetrazol Drugs 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Chemical compound [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- COLNVLDHVKWLRT-UHFFFAOYSA-N phenylalanine Natural products OC(=O)C(N)CC1=CC=CC=C1 COLNVLDHVKWLRT-UHFFFAOYSA-N 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- CHKVPAROMQMJNQ-UHFFFAOYSA-M potassium bisulfate Chemical compound [K+].OS([O-])(=O)=O CHKVPAROMQMJNQ-UHFFFAOYSA-M 0.000 description 1
- 229910000343 potassium bisulfate Inorganic materials 0.000 description 1
- 239000001508 potassium citrate Substances 0.000 description 1
- 229960002635 potassium citrate Drugs 0.000 description 1
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 description 1
- 235000011082 potassium citrates Nutrition 0.000 description 1
- IWZKICVEHNUQTL-UHFFFAOYSA-M potassium hydrogen phthalate Chemical compound [K+].OC(=O)C1=CC=CC=C1C([O-])=O IWZKICVEHNUQTL-UHFFFAOYSA-M 0.000 description 1
- 239000001230 potassium iodate Substances 0.000 description 1
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 1
- 229940093930 potassium iodate Drugs 0.000 description 1
- 235000006666 potassium iodate Nutrition 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 235000019394 potassium persulphate Nutrition 0.000 description 1
- 229910052939 potassium sulfate Inorganic materials 0.000 description 1
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 150000003152 propanolamines Chemical class 0.000 description 1
- 150000003217 pyrazoles Chemical class 0.000 description 1
- YOWAEZWWQFSEJD-UHFFFAOYSA-N quinoxalin-2-amine Chemical compound C1=CC=CC2=NC(N)=CN=C21 YOWAEZWWQFSEJD-UHFFFAOYSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- DHEQXMRUPNDRPG-UHFFFAOYSA-N strontium nitrate Inorganic materials [Sr+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O DHEQXMRUPNDRPG-UHFFFAOYSA-N 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 1
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- LUVHDTDFZLTVFM-UHFFFAOYSA-M tetramethylazanium;chlorate Chemical compound [O-]Cl(=O)=O.C[N+](C)(C)C LUVHDTDFZLTVFM-UHFFFAOYSA-M 0.000 description 1
- ZRVXFJFFJZFRLQ-UHFFFAOYSA-M tetramethylazanium;iodate Chemical compound [O-]I(=O)=O.C[N+](C)(C)C ZRVXFJFFJZFRLQ-UHFFFAOYSA-M 0.000 description 1
- HLQAWDQQEJSALG-UHFFFAOYSA-M tetramethylazanium;periodate Chemical compound C[N+](C)(C)C.[O-]I(=O)(=O)=O HLQAWDQQEJSALG-UHFFFAOYSA-M 0.000 description 1
- 125000003831 tetrazolyl group Chemical group 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 1
- SQFASPLWQUAIAT-UHFFFAOYSA-N triazin-4-ylmethanamine Chemical compound NCC1=CC=NN=N1 SQFASPLWQUAIAT-UHFFFAOYSA-N 0.000 description 1
- MPSUGQWRVNRJEE-UHFFFAOYSA-N triazol-1-amine Chemical compound NN1C=CN=N1 MPSUGQWRVNRJEE-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WUMSTCDLAYQDNO-UHFFFAOYSA-N triethoxy(hexyl)silane Chemical compound CCCCCC[Si](OCC)(OCC)OCC WUMSTCDLAYQDNO-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 229940116269 uric acid Drugs 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0014—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by incorporation in a layer which is removed with the contaminants
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/395—Bleaching agents
- C11D3/3956—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3245—Aminoacids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/36—Organic compounds containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
- C23G1/18—Organic inhibitors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/20—Other heavy metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/24—Cleaning or pickling metallic material with solutions or molten salts with neutral solutions
- C23G1/26—Cleaning or pickling metallic material with solutions or molten salts with neutral solutions using inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
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Abstract
本发明涉及一种在使用含铝蚀刻停止层的半导体的生产中帮助去除蚀刻后残留物及含铝材料、例如氧化铝的清洁组合物。所述组合物相对于低k介电材料、含钴材料和微电子装置上的其它金属对蚀刻后残留物和含铝材料具有高选择性。
Description
相关申请案
本申请案主张2017年1月17日申请的美国临时申请案62/447,247号的权利,所述案的公开内容的全文是以引用方式全部并入本文中。
技术领域
本发明涉及用于从微电子装置去除蚀刻后残留物的组合物及其制造及使用的方法,其中所述组合物针对相对于低k电介质材料、含钴材料和微电子装置上的其它金属的蚀刻后残留物和含铝材料具有一高选择性。
背景技术
随着装置节点在高阶半导体制造中缩减至低于10纳米(nm),引入新材料以获得更好的装置性能及可制造性。正在考虑的新材料的实例包含钴通路接触件、含铝蚀刻停止层和氮化钛势垒层。
与含钴材料、氮化钛和低k电介质材料兼容的蚀刻后清洁化学物质实现在更小及更高阶节点处的制造工艺。在后端(BEOL),铜(Cu)仍被用作一互连金属线,因此与铜兼容的一清洁化学调配物以及新材料是有利的。
需要相对于装置中的其它层对蚀刻后残留物和含铝材料(例如,氧化铝)具有受控蚀刻速率及选择性的清洁组合物,所述其它层可包含含钴材料、铜、低k电介质和氮化钛势垒层。
发明内容
在使用钴通路接触件、低k电介质材料和铜互连件制造微电子装置期间,蚀刻后残留物去除的问题是通过相对于其它层(如含钴层、铜和低k电介质材料(包含超低k电介质材料))对蚀刻后残留物和含铝材料具有一蚀刻速率选择性的一组合物来解决。
具体实施方式
本文中描述相对于其它层(如含钴材料、铜互连件和低k电介质材料)对含铝材料(例如,氧化铝)具有蚀刻选择性的清洁组合物。此外,本文中描述使用所述清洁组合物从微电子装置有效地去除蚀刻后残留物和含铝蚀刻停止层(包含氧化铝)的方法。
为方便参考,“微电子装置”对应于半导体衬底、平板显示器、相变内存装置、太阳能板和包含太阳能电池装置、光伏打装置和微机电系统(MEMS)的其它产品,其被制造用于微电子装置、集成电路、能量收集或计算机芯片应用。应了解,术语“微电子装置”、“微电子衬底”和“微电子装置结构”并不意欲以任何方式限制,并包含将最终变成一微电子装置或微电子总成的任何衬底或结构。微电子装置可经图案化、经覆盖、为一控制和/或一测试装置。
如本文所用,“约”旨在对应于陈述值的±5%。
“基本上缺乏”在本文中定义为小于2重量%,优选地小于1重量%,更优选地小于0.5重量%,甚至更优选地小于0.1重量%,且最优选地0重量%。
如本文所定义,“含铝材料”包含含铝蚀刻停止层(例如,氧化铝或氮化铝)。
如本文所定义,“氧化铝”可由AlxOy表示,所述式意味着氧化铝可具有不同化学计量并可包含不同的铝氧化物(例如,Al2O3),此取决于原始含铝反应物及沉积的方法,以及任何杂质的存在。可在物理气相沉积(PVD)、原子层沉积(ALD)或化学气相沉积(CVD)下沉积氧化铝。
如本文所定义,“低k电介质材料”对应于用作一分层微电子装置中的一电介质材料的任何材料,其中材料具有小于约3.5的一电介质常数。低k电介质材料包含超低k电介质材料。优选的是,低k电介质材料包含低极性材料(如含硅有机聚合物、含硅混合有机/无机材料、有机硅酸盐玻璃(OSG)、原硅酸四乙酯(TEOS)、氟化硅酸盐玻璃(FSG)、二氧化硅和碳掺杂氧化物(CDO)玻璃)。应明白,低k电介质材料可具有不同密度及不同孔隙率。
如本文所描述,“二氧化硅”或“SiO2”材料对应于从氧化硅前体来源沉积的材料,例如,TEOS、热沉积氧化硅、或使用商业上可购得的前体(如SiLKTM、AURORATM、CORALTM或BLACK DIAMONDTM)沉积的碳掺杂氧化物(CDO)。出于此描述的目的,“二氧化硅”打算广泛地包含SiO2、CDO、硅氧烷和热氧化物。二氧化硅或SiO2材料对应于纯二氧化硅(SiO2)以及结构中包含杂质的不纯二氧化硅。
如本文所用的“蚀刻后残留物”对应于气相等离子体蚀刻工艺(例如,BEOL双镶嵌工艺)之后剩余的材料。蚀刻后残留物本质上可为有机的、有机金属的(例如,有机硅的)或无机的,且可包含(例如)含硅材料、含钛材料、含氮材料、含氧材料、聚合物残留物材料、含铜残留物材料(包含氧化铜残留物)、含钨残留物材料、含钴残留物材料、蚀刻气体残留物(如氯和氟)及其组合。
如本文所用,用于从其上具有含铝材料和/或蚀刻后残留物的微电子装置去除所述材料的“适用性”对应于从微电子装置至少部分去除所述含铝材料和/或蚀刻后残留物材料。优选的是,使用本文中描述的组合物从微电子装置去除至少约90%的材料,更优选地至少95%的材料,且最优选地至少99%的材料。
本发明的组合物可以多种特定调配物体现,如下文所更完全描述。
在所有此类组合物中,其中参考包含零下限的重量百分比范围论述组合物的特定成分,应了解,此类成分可存在或不存在于组合物的各种特定实施例中,且在此类成分存在的例项中,所述成分可以采用此类成分的组合物的总重量计以低到0.00001重量%的浓度存在。
在第一方面中,描述一种清洁组合物,其中所述清洁组合物是水性的,且包括:(a)浓缩物,其包括至少一种金属腐蚀抑制剂、至少一种蚀刻剂来源、至少一种二氧化硅来源、至少一种螯合剂和至少一种溶剂、由以上物质组成或基本上由以上物质组成,和(b)至少一种氧化剂,其中所述浓缩物与至少一种氧化剂组合以形成所述清洁组合物,其中所述清洁组合物适合于从其上具有蚀刻后残留物和含铝材料的微电子装置的表面去除所述蚀刻后残留物和含铝材料。蚀刻后残留物可包括选自由下列组成的群组的至少一种物质:含钛残留物、聚合物残留物、含铜残留物、含钴残留物、含硅残留物及其组合。
在本发明的一些版本中,蚀刻剂来源可包含氢氧化铵,或具有式NR1R2R3R4OH的氢氧化四烷基铵碱,其中R1、R2、R3和R4可彼此相同或彼此不同,并且是选自由下列组成的群组:氢、直链或支链C1-C6烷基(例如,甲基、乙基、丙基、丁基、戊基和己基)、C1-C6羟基烷基(例如,羟甲基、羟乙基、羟丙基、羟丁基、羟戊基和羟己基),和被取代或未被取代C6-C10芳基(例如,苄基)。商业上可购得的氢氧化四烷基铵包含:氢氧化四甲基铵(TMAH)、氢氧化四乙基铵(TEAH)、氢氧化四丙基铵(TPAH)、氢氧化四丁基铵(TBAH)、氢氧化三丁基甲基铵(TBMAH)、氢氧化苄基三甲基铵(BTMAH)、氢氧化胆碱、氢氧化乙基三甲基铵、氢氧化三(2-羟乙基)甲基铵、氢氧化二乙基二甲基铵,及它们可用组合。替代地,蚀刻剂来源可为季三烷醇胺碱,包含(但不限于)季胺(如三甲基丙醇胺、三乙基乙醇胺、二甲基乙基乙醇胺、二乙基甲基乙醇胺、二甲基乙基丙醇胺、二乙基甲基丙醇胺和三乙基丙醇胺)的盐。一种或多种蚀刻剂来源可构成以浓缩物的总重量计浓缩物的约0.1重量%至约20重量%。在一些实施例中,一种或多种蚀刻剂来源可构成以浓缩物的总重量计浓缩物的约0.1重量%至约10重量%。在其它实施例中,一种或多种蚀刻剂来源可构成以浓缩物的总重量计浓缩物的约10重量%至约20重量%。优选的是,至少一种蚀刻剂来源包括氢氧化胆碱。
金属腐蚀抑制剂可用于保护接触金属(如Cu和Co)。金属腐蚀抑制剂可包括一个或多个腐蚀抑制剂、由一个或多个腐蚀抑制剂组成,或基本上由一个或多个腐蚀抑制剂组成,所述一个或多个腐蚀抑制剂包含(但不限于):5-氨基四唑、5-苯基-苯并三唑、1H-四唑-5-乙酸、1-苯基-2-四唑啉-5-硫酮、苯并咪唑、甲基四唑、吡唑、5-氨基-1,3,4-噻二唑-2-硫醇(ATDT)、苯并三唑(BTA)、1,2,4-三唑(TAZ)、1,2,3-三唑、甲苯基三唑、5-甲基-苯并三唑(mBTA)、5-苯基-苯并三唑、5-硝基-苯并三唑、苯并三唑羧酸、3-氨基-5-巯基-1,2,4-三唑、1-氨基-1,2,4-三唑、羟基苯并三唑、2-(5-氨基-戊基)-苯并三唑、1-氨基-1,2,3-三唑、1-氨基-5-甲基-1,2,3-三唑、3-氨基-1,2,4-三唑(3-ATA)、3-巯基-1,2,4-三唑、3-异丙基-1,2,4-三唑、5-苯基硫醇-苯并三唑、卤代-苯并三唑类(卤基=F、Cl、Br或I)、萘并三唑、2-巯基苯并咪唑(MBI)、2-巯基苯并噻唑、4-甲基-2-苯基咪唑、2-巯基噻唑啉、5-氨基-1,2,4-三唑(5-ATA)、3-氨基-5-巯基-1,2,4-三唑、戊四唑、5-苯基-1H-四唑、5-苄基-1H-四唑、2,4-二氨基-6-甲基-1,3,5-三嗪、噻唑、三嗪、甲基四唑、1,3-二甲基-2-咪唑烷酮、1,5-五亚甲基四唑、1-苯基-5-巯基四唑、二氨基甲基三嗪、咪唑啉硫酮、4-甲基-4H-1,2,4-三唑-3-硫醇、4-氨基-4H-1,2,4-三唑、3-氨基-5-甲硫基-1H-1,2,4-三唑、苯并噻唑、咪唑、吲唑、腺嘌呤、腺苷、咔唑及其组合。浓缩物中的腐蚀抑制剂的量的范围是提供约或更少的一基本上不依赖于抑制剂的Cu蚀刻速率,及约或更少的一钴蚀刻速率的一量,如在浸沉于具有清洁组合物(即,包括至少一个氧化剂)的烧杯中的试样块样品上所测量。例如,浓缩物中的一个或多个腐蚀抑制剂的量可以浓缩物的总重量计在从约0.01重量%到约5重量%的一范围中。在其它实施例中,浓缩物中的一个或多个腐蚀抑制剂的量是以浓缩物的总重量计,可为约0.1重量%到约2重量%或约2重量%到约5重量%。优选的是,至少一个腐蚀抑制剂包括TAZ、mBTA、甲苯基三唑或它们的任何组合。
螯合剂或金属错合剂可包含(但不限于):4-(2-羟乙基)吗啉(HEM)、1,2-环己二胺-N,N,N′,N′-四乙酸(CDTA)、乙二胺四乙酸(EDTA)、间二甲苯二胺(MXDA)、亚氨基二乙酸(IDA)、2-(羟乙基)亚氨基二乙酸(HIDA)、次氮基三乙酸、硫脲、1,1,3,3-四甲基脲、脲、脲衍生物、尿酸、丙氨酸、精氨酸、天冬酰胺、天冬氨酸、半胱氨酸、谷氨酸、谷胺酰胺、组氨酸、异亮氨酸、亮氨酸、赖氨酸、甲硫氨酸、苯丙氨酸、脯氨酸、丝氨酸、苏氨酸、色氨酸、酪氨酸、缬氨酸、膦酸酯(例如,1-羟基亚乙基-1,1-二膦酸(HEDP)、1,5,9-三氮杂环十二烷-N,N',N"-三(亚甲基膦酸)(DOTRP)、1,4,7,10-四氮杂环十二烷-N,N',N",N'"-四(亚甲基膦酸)(DOTP)、氮基三(亚甲基)三膦酸、二亚乙基三胺五(亚甲基膦酸)(DETAP)、氨基三(亚甲基膦酸)、双(六亚甲基)三胺五亚甲基膦酸、1,4,7-三氮杂环壬烷-N,N',N"-三(亚甲基膦酸)(NOTP)、羟乙基二膦酸酯、氮基三(亚甲基)膦酸、2-膦酰基-丁烷-1,2,3,4-四羧酸、羰乙基膦酸、氨基乙基膦酸、草甘膦(glyphosate)、乙二胺四(亚甲基膦酸)苯基膦酸、它们的盐和它们的衍生物)、羧酸(例如,草酸、琥珀酸、马来酸、苹果酸、丙二酸、己二酸、邻苯二甲酸、柠檬酸、柠檬酸钠、柠檬酸钾、柠檬酸铵、丙三羧酸、三羟甲基丙酸、酒石酸、葡糖醛酸和2-羧基吡啶)、磷酸盐、磷酸、磺酸、杂环胺N-氧化物(例如,3,5-二甲基吡啶N-氧化物、3-甲基吡啶N-氧化物、4-甲基吗啉-N-氧化物(NMMO)、2-甲基吡啶N-氧化物、N-甲基哌啶-N-氧化物和4-乙基吗啉-N-氧化物)及其组合。浓缩物中的一个或多个螯合剂的量可以浓缩物的总重量计在从约0.01重量%到约10重量%的一范围中。在其它实施例中,浓缩物中的一个或多个螯合剂的量可以浓缩物的总重量计为约0.1重量%到约5重量%或约5重量%到约10重量%。应注意,当至少一个螯合剂是杂环胺N-氧化物时,杂环胺N-氧化物可在一氧化剂存在下使用一未氧化前体分子原位制造。此外,应了解,杂环胺N-氧化物还可作用氧化剂,然而,出于本发明的目的,所述杂环胺N-氧化物存在于浓缩物中并特征化为螯合剂。优选的是,至少一个螯合剂包括EDTA、CDTA、HEDP、草酸和NMMO中的一者,优选地包括CDTA、HEDP和NMMO中的一者。
至少一种二氧化硅来源优选地包括氟硅酸(H2SiF6)。应了解,氟硅酸可通过组合以下各者而原位制备:至少一种氟化物来源(例如,HF、氟化铵、二氟化铵、氟化四烷基铵(NR1R2R3R4F),其中R1、R2、R3、R4可彼此相同或彼此不同并选自由下列组成的群组:氢、直链或支链C1-C6烷基(例如,甲基、乙基、丙基、丁基、戊基和己基)、C1-C6羟基烷基(例如,羟乙基和羟丙基)、被取代或未被取代芳基(例如,苄基)、弱碱及其组合);与至少一种含硅化合物,如烷氧基硅烷、六氟硅酸铵、硅酸钠、硅酸四甲基铵(TMAS)及其组合。预期的烷氧基硅烷具有通式SiR1R2R3R4,其中R1、R2、R3和R4彼此相同或彼此不同,并选自由下列组成的群组:直链C1-C6烷基(例如,甲基、乙基、丙基、丁基、戊基和己基)、支链C1-C6烷基、C1-C6烷氧基(例如,甲氧基、乙氧基、丙氧基、丁氧基、戊氧基和己氧基)、苯基及其组合。熟练的业内人士应了解,为了特征化为烷氧基硅烷,R1、R2、R3或R4的至少一者必须为C1-C6烷氧基。预期的烷氧基硅烷包含:甲基三甲氧基硅烷、二甲基二甲氧基硅烷、苯基三甲氧基硅烷、四乙氧基硅烷(TEOS)、N-丙基三甲氧基硅烷、N-丙基三乙氧基硅烷、己基三甲氧基硅烷、己基三乙氧基硅烷及其组合。浓缩物中的一种或多种二氧化硅来源的量可以浓缩物的总重量计在约0.01重量%到约5重量%的范围中。在其它实施例中,浓缩物中的一种或多种二氧化硅来源的量以浓缩物的总重量计可为约0.01重量%到约2重量%或约2重量%到约5重量%。
至少一种溶剂优选地包括水,甚至更优选地包括去离子水。水可构成以清洁组合物的总重量计清洁组合物的约60重量%到约98重量%。应了解,在浓缩物中可存在较少水,但较少水可与至少一种氧化剂同时添加至清洁组合物中以产生具有前述量的水的清洁组合物。
为形成本文中描述的清洁组合物,将浓缩物与至少一种氧化剂混合。本文中预期的氧化剂包含(但不限于)过氧化氢(H2O2)、FeCl3、FeF3、Fe(NO3)3、Sr(NO3)2、CoF3、MnF3、过硫酸氢钾复合盐(oxone)(2KHSO5·KHSO4·K2SO4)、硝酸(HNO3)、铵多原子盐(例如,过氧单硫酸铵、亚氯酸铵(NH4ClO2)、氯酸铵(NH4ClO3)、碘酸铵(NH4IO3)、硝酸铵(NH4NO3)、过硼酸铵(NH4BO3)、高氯酸铵(NH4ClO4)、高碘酸铵(NH4IO4)、过硫酸铵((NH4)2S2O8)、次氯酸铵(NH4ClO)和钨酸铵((NH4)10H2(W2O7))、钠多原子盐(例如,过硫酸钠(Na2S2O8)、次氯酸钠(NaClO)和过硼酸钠)、钾多原子盐(例如,碘酸钾(KIO3)、高锰酸钾(KMnO4)、过硫酸钾(K2S2O8)和次氯酸钾(KClO))、四甲基铵多原子盐(例如,亚氯酸四甲基铵((N(CH3)4)ClO2)、四甲基氯酸铵((N(CH3)4)ClO3)、四甲基碘酸铵((N(CH3)4)IO3)、四甲基过硼酸铵((N(CH3)4)BO3)、四甲基高氯酸铵((N(CH3)4)ClO4)、四甲基高碘酸铵((N(CH3)4)IO4)和四甲基过硫酸铵((N(CH3)4)S2O8))、四丁基铵多原子盐(例如,四丁基过氧单硫酸铵)、过氧单硫酸、硝酸铁(Fe(NO3)3)、过氧化氢脲((CO(NH2)2)H2O2)、过乙酸(CH3(CO)OOH)、1,4-苯并醌、甲苯醌、二甲基-1,4-苯并醌、四氯醌、四氧嘧啶,及其组合。优选的是,至少一种氧化剂包括过氧化氢。
可通过组合浓缩物与氧化剂(例如,通过将至少一个氧化剂添加至浓缩物)来制备清洁组合物。例如,可通过将10份浓缩物与从约0.1份到约1份之间的氧化剂混合来制备清洁组合物。在一特定优选的实施例中,至少一个氧化剂的量以清洁组合物的总重量计是小于约10重量%,甚至优选地是小于约8重量%。在一项实施例中,清洁组合物可包括过氧化氢和浓缩物。例如,可通过将10份浓缩物与约0.1份30%H2O2到约3份30%H2O2混合来制备清洁组合物。
在将浓缩物与至少一个氧化剂组合之后,清洁组合物的pH是在约6到约10的一范围中,优选地是在约6到约9.5的一范围中,甚至更优选地是在从约6到约9的一范围中。在另一实施例中,在将浓缩物与至少一个氧化剂组合之后,清洁组合物的pH优选地是在大于7到约9.5的一范围中,最好是大于7到约9。
第一方面的清洁组合物宜大致上缺乏金属卤化物、偕胺肟化合物、有机溶剂和羧酸盐中的至少一者。如本文所定义,“金属卤化物”包含式WzMXy,其中M是选自Si、Ge、Sn、Pt、P、B、Au、Ir、Os、Cr、Ti、Zr、Rh、Ru和Sb的群组的一金属;X是选自F、Cl、Br和I的一卤化物;W是选自H、碱或碱土金属和无金属离子的氢氧化物碱部分;y是取决于金属卤化物的从4到6的一数字;及z是1、2或3的一数字。如本文所定义,“羧酸盐”包含柠檬酸三钾单水合物、酒石酸钾钠四水合物、L-乳酸钾和选自由下列组成的群组的羧酸铵:草酸铵、乳酸铵、酒石酸铵、柠檬酸三铵、乙酸铵、氨基甲酸铵、碳酸铵、苯甲酸铵、乙二胺四乙酸铵、乙二胺四乙酸二铵、乙二胺四乙酸三铵、乙二胺四乙酸四铵、丁二酸铵、甲酸铵和1-H-吡唑-3-羧酸铵。出于本发明的目的,“有机溶剂”包含二甲基亚砜、乙二醇、乙二醇烷基醚、二甘醇烷基醚、三甘醇烷基醚、丙二醇、丙二醇烷基醚、N取代的吡咯烷酮、乙二胺和亚乙基三胺。
在一优选的实施例中,清洁组合物经调配以确保氧化铝蚀刻速率大于约优选地大于约且最优选地在从约20到约的一范围中。有利的是,本文中描述的清洁组合物适合于从其上具有含铝材料和/或蚀刻后残留物的一微电子装置去除所述材料,同时大致上不损坏也存在于微电子装置上的含钴层、铜或低k电介质层(包含超低k电介质层)。
本文中描述的清洁组合物通过将浓缩物的各别组分与至少一个氧化剂简单添加并混合至均相条件来轻易调配。替代地,本文中描述的清洁组合物通过将浓缩物的各别组分与至少一个氧化剂和附加水简单添加并混合至均相条件来轻易调配。此外,组合物可轻易调配为在使用时混合的多部分调配物。多部分调配物的个别部分可在工具处混合或在工具上游的一储存罐中混合。各别组分的浓度可以组合物的特定倍数(即,更稀或更浓)广泛地变化,且应了解,本文中描述的组合物可不同地及替代地包括与本文中公开一致的组分的任何组合、由以上物质组成或基本上由以上物质组成。
因此,一第二方面涉及一种试剂盒,所述试剂盒在一个或多个容器中包含经调适以形成本文中描述的组合物的一个或多个成分。所述试剂盒可在一个或多个容器中包含一浓缩物,所述浓缩物包括至少一个金属腐蚀抑制剂、至少一个蚀刻剂来源、至少一个二氧化硅来源、至少一个螯合剂和至少一个溶剂、由以上物质组成或基本上由以上物质组成,以用于在制作或使用时与至少一个氧化剂组合。替代地,所述试剂盒可在一个或多个容器中包含一浓缩物,所述浓缩物包括至少一个金属腐蚀抑制剂、至少一个蚀刻剂来源、至少一个二氧化硅来源、至少一个螯合剂和至少一个溶剂、由以上物质组成或基本上由以上物质组成,以用于在制作或使用时与至少一个氧化剂和附加水组合。试剂盒的容器必须适合于储存及运输所述清洁组合物,且可为(例如)容器(美国马萨诸赛州比尔里卡的英特格公司(Entegris,Inc.,Billerica,Mass.,USA))。
容纳清洁组合物的成分的一个或多个容器优选地包含用于使所述一个或多个容器中的成分流体连通以便掺合及分配的构件。例如,参考容器,可将气压施加至所述一个或多个容器中的一衬板的外部,以导致衬板的内容物的至少一部分被排出,并因此实现流体连通以便掺合及分配。替代地,可将气压施加至一常规可加压容器的顶部空间,或可使用一泵来实现流体连通。另外,系统优选地包含用于将经掺合清洁组合物分配至一处理工具的一分配口。
在一第三方面,第一方面的清洁组合物用于从其上具有蚀刻后残留物和含铝材料(例如,氧化铝)的微电子装置去除所述蚀刻后残留物和含铝材料(例如,氧化铝)。清洁组合物通常在从约20℃到约90℃,优选地约30℃到约70℃,且最优选地约35℃到约65℃的一范围中的温度下与装置静态或动态接触达从约1分钟到约30分钟,优选地从约1分钟到约10分钟的一时间。此类接触时间及温度是阐释性的,且可采用能有效地从装置至少部分去除蚀刻后残留物和含铝材料的任何其它适合时间及温度条件。从微电子装置“至少部分去除”残留物和含铝材料对应于去除至少90%的材料,优选地至少95%的材料。最优选地,使用本文中描述的清洁组合物去除至少99%的所述材料。
在蚀刻后残留物和含铝材料去除应用中,可以任何方式(例如,通过将组合物喷涂在待清洁的装置的表面上、通过将待清洁的装置浸渍于组合物的一静态或动态体积中、通过使待清洁的装置与其上吸收有组合物的另一材料(例如,一垫或纤维吸附剂施加器组件)接触或通过使组合物与待清洁的装置去除接触的任何其它适合手段、方法或技术)将清洁组合物施加至待清洁的装置。此外,本文中预期批式或单晶片处理。
在实现期望的残留物和含铝材料去除之后,清洁组合物可从其先前已施加的装置轻易去除,此在本文中描述的组合物的一给定最终用途应用中可为期望的及有效的。优选的是,可使用一冲洗溶液,其中冲洗溶液包含去离子水。此后,可使用氮气或一旋转干燥循环干燥装置。
又另一方面涉及根据本文中描述的方法制造的改进微电子装置和含有此类微电子装置的产品。
一又进一步方面涉及制造包括一微电子装置的一物件的方法,所述方法包括:使微电子装置与一清洁组合物接触足够时间以自其上具有蚀刻后残留物和含铝材料的微电子装置清洁所述残留物和材料,并使用本文中描述的一清洁组合物将所述微电子装置并入于所述物件中。
另一方面涉及一种制品,所述制品包括一清洁组合物、一微电子装置晶片和选自由蚀刻后残留物、含铝材料及其组合组成的群组的材料,其中所述清洁组合物包括:(a)一浓缩物,其包括至少一个金属腐蚀抑制剂、至少一个蚀刻剂来源、至少一个二氧化硅来源、至少一个螯合剂和至少一个溶剂、由以上物质组成或基本上由以上物质组成,和(b)至少一个氧化剂。
虽然已相对于一个或多个实施方案而展示及描述了本发明,但是所属领域的其他技术人员将在阅读及理解本说明书和随附图式之后进行等效更改及修改。本发明包含所有此类修改及更改,且仅受所附权利要求书的范围限制。此外,虽然可能已经关于若干实施方案的仅一者公开了本发明的一特定特征或方面,但此特征或方面可与任何给定或特定应用所期望或有利于任何给定或特定应用的其它实施方案的一个或多个其它特征或方面组合。此外,就在详细描述或权利要求书中使用的术语“包含”、“具有”或其变体来说,此类术语意欲以类似于术语“包括”的方式包含。此外,术语“示例性”仅仅意味着表示一实例,而非最好的实例。还应了解,为了简单且便于理解的目的,本文中描绘的特征、层和/或组件被图解说明为相对于彼此的特定尺寸和/或定向,且实际尺寸和/或定向可与本文中图解说明的尺寸和/或定向基本上不同。
Claims (20)
1.一种清洁组合物,其包括:(a)浓缩物,其包括至少一种金属腐蚀抑制剂、至少一种蚀刻剂来源、至少一种二氧化硅来源、至少一种螯合剂、和至少一种溶剂,和(b)至少一种氧化剂,其中所述清洁组合物适合于从其上具有蚀刻后残留物和含铝材料的微电子装置的表面去除所述蚀刻后残留物和含铝材料。
2.根据权利要求1所述的清洁组合物,其中所述蚀刻后残留物包括选自由含钛残留物、聚合物残留物、含铜残留物、含钴残留物、含硅残留物及其组合组成的群组的至少一种物质。
3.根据权利要求1所述的清洁组合物,其中所述至少一种蚀刻剂来源包括氢氧化铵或氢氧化四烷基铵。
4.根据权利要求3所述的清洁组合物,其中所述至少一种蚀刻剂来源包括氢氧化胆碱。
5.根据权利要求1所述的清洁组合物,其中所述至少一种金属腐蚀抑制剂包括1,2,4-三唑TAZ、5-甲基-苯并三唑mBTA、甲苯基三唑、或其组合。
6.根据权利要求1所述的清洁组合物,其中所述至少一种螯合剂是乙二胺四乙酸EDTA、1,2-环己二胺-N,N,N′,N′-四乙酸CDTA、1-羟基亚乙基-1,1-二膦酸HEDP、草酸、或4-甲基吗啉-N-氧化物NMMO。
7.根据权利要求6所述的清洁组合物,其中所述至少一种螯合剂是1,2-环己二胺-N,N,N′,N′-四乙酸CDTA、1-羟基亚乙基-1,1-二膦酸HEDP、或4-甲基吗啉-N-氧化物NMMO。
8.根据权利要求1所述的清洁组合物,其中所述至少一种二氧化硅来源包括氟硅酸(H2SiF6)。
9.根据权利要求8所述的清洁组合物,其中所述氟硅酸是通过组合至少一种氟化物来源及至少一种含硅化合物而原位制备。
10.根据权利要求1所述的清洁组合物,其中所述至少一种氧化剂包括过氧化氢。
11.根据权利要求1所述的清洁组合物,其中所述清洁组合物包括10份浓缩物与介于约0.1份到约1份之间的氧化剂。
12.根据权利要求1所述的清洁组合物,其中所述至少一种氧化剂的量以所述清洁组合物的总重量计是小于约10重量%。
13.根据权利要求1所述的清洁组合物,其中所述至少一种溶剂包括水。
14.根据权利要求1所述的清洁组合物,其中所述微电子装置包括含钴层、低k介电层和铜。
15.一种从微电子装置去除材料的方法,所述微电子装置上具有所述材料,所述方法包括:
使所述微电子装置的表面与清洁组合物接触,所述清洁组合物包括:(a)浓缩物,其包括至少一种金属腐蚀抑制剂、至少一种蚀刻剂来源、至少一种二氧化硅来源、至少一种螯合剂、和至少一种溶剂,和(b)至少一种氧化剂,和
从所述微电子装置至少部分去除蚀刻后残留物和含铝材料,其中所述微电子装置包括含钴层、低k介电层和铜。
16.根据权利要求15所述的方法,其中所述清洁组合物大致上不损坏所述含钴层、低k介电层和铜。
17.一种包括一个或多个容器的试剂盒,所述一个或多个容器中具有用于从微电子装置至少部分去除蚀刻后残留物和含铝材料的成分,其中所述试剂盒的第一容器含有浓缩物,所述浓缩物包括至少一种金属腐蚀抑制剂、至少一种蚀刻剂来源、至少一种二氧化硅来源、至少一种螯合剂和至少一种溶剂。
18.根据权利要求17所述的试剂盒,其进一步包括含有至少一种氧化剂的第二容器,其中所述第一容器和所述第二容器经配置以使得所述浓缩物和所述氧化剂实现流体连通以便掺杂及分配。
19.根据权利要求18所述的试剂盒,其中所述第一容器包括含有所述浓缩物的第一衬板且所述第二容器包括含有所述氧化剂的第二衬板,且其中所述第一衬板和所述第二衬板经配置以使得所述浓缩物和所述氧化剂通过施加压力而实现流体连通。
20.根据权利要求19所述的试剂盒,其中所述第一容器或所述第二容器是经配置以使得所述浓缩物和所述氧化剂通过施加压力而实现流体连通的可加压容器。
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