TW201840826A - 高階節點製程後端處理之蝕刻後殘留物去除 - Google Patents
高階節點製程後端處理之蝕刻後殘留物去除 Download PDFInfo
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- TW201840826A TW201840826A TW107101677A TW107101677A TW201840826A TW 201840826 A TW201840826 A TW 201840826A TW 107101677 A TW107101677 A TW 107101677A TW 107101677 A TW107101677 A TW 107101677A TW 201840826 A TW201840826 A TW 201840826A
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- Prior art keywords
- cleaning composition
- acid
- microelectronic device
- aluminum
- concentrate
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- 238000012545 processing Methods 0.000 title description 3
- 239000000203 mixture Substances 0.000 claims abstract description 75
- 239000000463 material Substances 0.000 claims abstract description 61
- 238000004140 cleaning Methods 0.000 claims abstract description 50
- 238000004377 microelectronic Methods 0.000 claims abstract description 35
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 27
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 12
- 239000010941 cobalt Substances 0.000 claims abstract description 12
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000012141 concentrate Substances 0.000 claims description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
- 239000007800 oxidant agent Substances 0.000 claims description 23
- 239000003112 inhibitor Substances 0.000 claims description 17
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- 238000005260 corrosion Methods 0.000 claims description 16
- 230000007797 corrosion Effects 0.000 claims description 16
- 230000001590 oxidative effect Effects 0.000 claims description 15
- 239000002738 chelating agent Substances 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 7
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical group OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 6
- LFTLOKWAGJYHHR-UHFFFAOYSA-N N-methylmorpholine N-oxide Chemical compound CN1(=O)CCOCC1 LFTLOKWAGJYHHR-UHFFFAOYSA-N 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 claims description 5
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 claims description 4
- HMBHAQMOBKLWRX-UHFFFAOYSA-N 2,3-dihydro-1,4-benzodioxine-3-carboxylic acid Chemical compound C1=CC=C2OC(C(=O)O)COC2=C1 HMBHAQMOBKLWRX-UHFFFAOYSA-N 0.000 claims description 3
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 3
- 229940075419 choline hydroxide Drugs 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 claims description 3
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 abstract description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 3
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- -1 flat panel displays Substances 0.000 description 25
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- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
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- 239000007983 Tris buffer Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 3
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 3
- OKIZCWYLBDKLSU-UHFFFAOYSA-M N,N,N-Trimethylmethanaminium chloride Chemical compound [Cl-].C[N+](C)(C)C OKIZCWYLBDKLSU-UHFFFAOYSA-M 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
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- 239000002585 base Substances 0.000 description 3
- 239000012964 benzotriazole Substances 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 229910001507 metal halide Inorganic materials 0.000 description 3
- 150000005309 metal halides Chemical class 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 2
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- GGZHVNZHFYCSEV-UHFFFAOYSA-N 1-Phenyl-5-mercaptotetrazole Chemical compound SC1=NN=NN1C1=CC=CC=C1 GGZHVNZHFYCSEV-UHFFFAOYSA-N 0.000 description 2
- WZUUZPAYWFIBDF-UHFFFAOYSA-N 5-amino-1,2-dihydro-1,2,4-triazole-3-thione Chemical compound NC1=NNC(S)=N1 WZUUZPAYWFIBDF-UHFFFAOYSA-N 0.000 description 2
- GDGIVSREGUOIJZ-UHFFFAOYSA-N 5-amino-3h-1,3,4-thiadiazole-2-thione Chemical compound NC1=NN=C(S)S1 GDGIVSREGUOIJZ-UHFFFAOYSA-N 0.000 description 2
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- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
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- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 2
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- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
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- 238000000231 atomic layer deposition Methods 0.000 description 2
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- 239000012535 impurity Substances 0.000 description 2
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- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 239000003960 organic solvent Substances 0.000 description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 2
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- 238000005240 physical vapour deposition Methods 0.000 description 2
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 2
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- APSPVJKFJYTCTN-UHFFFAOYSA-N tetramethylazanium;silicate Chemical compound C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C.[O-][Si]([O-])([O-])[O-] APSPVJKFJYTCTN-UHFFFAOYSA-N 0.000 description 2
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- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
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- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
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- BHUXAQIVYLDUQV-UHFFFAOYSA-N 1-(diethylamino)propan-2-ol Chemical compound CCN(CC)CC(C)O BHUXAQIVYLDUQV-UHFFFAOYSA-N 0.000 description 1
- ZABFSYBSTIHNAE-UHFFFAOYSA-N 1-(dimethylamino)butan-2-ol Chemical compound CCC(O)CN(C)C ZABFSYBSTIHNAE-UHFFFAOYSA-N 0.000 description 1
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- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
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- AFBBKYQYNPNMAT-UHFFFAOYSA-N 1h-1,2,4-triazol-1-ium-3-thiolate Chemical compound SC=1N=CNN=1 AFBBKYQYNPNMAT-UHFFFAOYSA-N 0.000 description 1
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- GATNOFPXSDHULC-UHFFFAOYSA-N ethylphosphonic acid Chemical compound CCP(O)(O)=O GATNOFPXSDHULC-UHFFFAOYSA-N 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000012458 free base Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 description 1
- 235000004554 glutamine Nutrition 0.000 description 1
- XDDAORKBJWWYJS-UHFFFAOYSA-N glyphosate Chemical compound OC(=O)CNCP(O)(O)=O XDDAORKBJWWYJS-UHFFFAOYSA-N 0.000 description 1
- 229940097068 glyphosate Drugs 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000004820 halides Chemical group 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 description 1
- 125000003707 hexyloxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 229960001340 histamine Drugs 0.000 description 1
- NPZTUJOABDZTLV-UHFFFAOYSA-N hydroxybenzotriazole Substances O=C1C=CC=C2NNN=C12 NPZTUJOABDZTLV-UHFFFAOYSA-N 0.000 description 1
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 1
- AGPKZVBTJJNPAG-UHFFFAOYSA-N isoleucine Natural products CCC(C)C(N)C(O)=O AGPKZVBTJJNPAG-UHFFFAOYSA-N 0.000 description 1
- 229960000310 isoleucine Drugs 0.000 description 1
- DJQJFMSHHYAZJD-UHFFFAOYSA-N lidofenin Chemical compound CC1=CC=CC(C)=C1NC(=O)CN(CC(O)=O)CC(O)=O DJQJFMSHHYAZJD-UHFFFAOYSA-N 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 229930182817 methionine Natural products 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- AENSXLNDMRQIEX-UHFFFAOYSA-L oxido sulfate;tetrabutylazanium Chemical compound [O-]OS([O-])(=O)=O.CCCC[N+](CCCC)(CCCC)CCCC.CCCC[N+](CCCC)(CCCC)CCCC AENSXLNDMRQIEX-UHFFFAOYSA-L 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- FHHJDRFHHWUPDG-UHFFFAOYSA-N peroxysulfuric acid Chemical compound OOS(O)(=O)=O FHHJDRFHHWUPDG-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- COLNVLDHVKWLRT-UHFFFAOYSA-N phenylalanine Natural products OC(=O)C(N)CC1=CC=CC=C1 COLNVLDHVKWLRT-UHFFFAOYSA-N 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- CFZKDDTWZYUZKS-UHFFFAOYSA-N picoline N-oxide Chemical compound CC1=CC=CC=[N+]1[O-] CFZKDDTWZYUZKS-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000001508 potassium citrate Substances 0.000 description 1
- 229960002635 potassium citrate Drugs 0.000 description 1
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 description 1
- PJAHUDTUZRZBKM-UHFFFAOYSA-K potassium citrate monohydrate Chemical compound O.[K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O PJAHUDTUZRZBKM-UHFFFAOYSA-K 0.000 description 1
- 235000011082 potassium citrates Nutrition 0.000 description 1
- SATVIFGJTRRDQU-UHFFFAOYSA-N potassium hypochlorite Chemical compound [K+].Cl[O-] SATVIFGJTRRDQU-UHFFFAOYSA-N 0.000 description 1
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 1
- 239000001230 potassium iodate Substances 0.000 description 1
- 235000006666 potassium iodate Nutrition 0.000 description 1
- 229940093930 potassium iodate Drugs 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- PHZLMBHDXVLRIX-DKWTVANSSA-M potassium;(2s)-2-hydroxypropanoate Chemical compound [K+].C[C@H](O)C([O-])=O PHZLMBHDXVLRIX-DKWTVANSSA-M 0.000 description 1
- VZOPRCCTKLAGPN-ZFJVMAEJSA-L potassium;sodium;(2r,3r)-2,3-dihydroxybutanedioate;tetrahydrate Chemical compound O.O.O.O.[Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O VZOPRCCTKLAGPN-ZFJVMAEJSA-L 0.000 description 1
- 150000003212 purines Chemical class 0.000 description 1
- 150000003217 pyrazoles Chemical class 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 229960001922 sodium perborate Drugs 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- YKLJGMBLPUQQOI-UHFFFAOYSA-M sodium;oxidooxy(oxo)borane Chemical compound [Na+].[O-]OB=O YKLJGMBLPUQQOI-UHFFFAOYSA-M 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 1
- VIULODLMHCJIDN-UHFFFAOYSA-N tetraazanium tetraacetate Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O VIULODLMHCJIDN-UHFFFAOYSA-N 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- FDXKBUSUNHRUIZ-UHFFFAOYSA-M tetramethylazanium;chlorite Chemical compound [O-]Cl=O.C[N+](C)(C)C FDXKBUSUNHRUIZ-UHFFFAOYSA-M 0.000 description 1
- ZRVXFJFFJZFRLQ-UHFFFAOYSA-M tetramethylazanium;iodate Chemical compound [O-]I(=O)=O.C[N+](C)(C)C ZRVXFJFFJZFRLQ-UHFFFAOYSA-M 0.000 description 1
- HLQAWDQQEJSALG-UHFFFAOYSA-M tetramethylazanium;periodate Chemical compound C[N+](C)(C)C.[O-]I(=O)(=O)=O HLQAWDQQEJSALG-UHFFFAOYSA-M 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000001393 triammonium citrate Substances 0.000 description 1
- 235000011046 triammonium citrate Nutrition 0.000 description 1
- XKWFRVVFRZYIFP-UHFFFAOYSA-N triazanium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxymethyl)amino]acetate Chemical compound N.N.N.OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O XKWFRVVFRZYIFP-UHFFFAOYSA-N 0.000 description 1
- LDGFRUUNCRYSQK-UHFFFAOYSA-N triazin-4-ylmethanediamine Chemical compound NC(N)C1=CC=NN=N1 LDGFRUUNCRYSQK-UHFFFAOYSA-N 0.000 description 1
- MPSUGQWRVNRJEE-UHFFFAOYSA-N triazol-1-amine Chemical compound NN1C=CN=N1 MPSUGQWRVNRJEE-UHFFFAOYSA-N 0.000 description 1
- WUMSTCDLAYQDNO-UHFFFAOYSA-N triethoxy(hexyl)silane Chemical compound CCCCCC[Si](OCC)(OCC)OCC WUMSTCDLAYQDNO-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 229940116269 uric acid Drugs 0.000 description 1
- 239000004474 valine Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0014—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by incorporation in a layer which is removed with the contaminants
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/395—Bleaching agents
- C11D3/3956—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3245—Aminoacids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/36—Organic compounds containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
- C23G1/18—Organic inhibitors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/20—Other heavy metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/24—Cleaning or pickling metallic material with solutions or molten salts with neutral solutions
- C23G1/26—Cleaning or pickling metallic material with solutions or molten salts with neutral solutions using inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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Abstract
本發明係關於一種在利用一含鋁蝕刻停止層之半導體的生產中幫助去除蝕刻後殘留物及例如,氧化鋁之含鋁材料的清潔組合物。該等組合物針對相對於低k介電材料、含鈷材料及微電子裝置上之其他金屬的蝕刻後殘留物及含鋁材料具有一高選擇性。
Description
本發明係關於用於自微電子裝置去除蝕刻後殘留物之組合物及其製造及使用之方法,其中該等組合物針對相對於低k介電材料、含鈷材料及微電子裝置上之其他金屬之蝕刻後殘留物及含鋁材料而具有一高選擇性。
隨著裝置節點在高階半導體製造中縮減至低於10奈米(nm),引入新材料以獲得較佳裝置效能及可製造性。正在考慮之新材料之實例包含鈷通路接觸件、含鋁蝕刻停止層及氮化鈦障壁層。 與含鈷材料、氮化鈦及低k介電材料相容之蝕刻後清潔化學性實現在更小及更高階節點處之製程。在後端(BEOL),銅(Cu)仍被用作一互連金屬線,因此與銅相容之一清潔化學調配物以及新材料係有利的。 需要針對裝置中之其他層上方之蝕刻後殘留物及含鋁材料(例如,氧化鋁)而具有受控蝕刻速率及選擇性之清潔組合物,該等其他層可包含含鈷材料、銅、低k電介質及氮化鈦障壁層。
在利用鈷通路接觸件、低k介電材料及銅互連件製造微電子裝置期間,蝕刻後殘留物去除之問題係藉由針對其他層(諸如含鈷層、銅及低k介電材料(包含超低k介電材料))上方之蝕刻後殘留物及含鋁材料而具有一蝕刻速率選擇性之一組合物來解決。
[相關申請案] 本申請案主張2017年1月17日申請之美國臨時申請案62/447,247號之權利,該案之揭示內容之全文係以引用方式全部併入本文中。 本文中描述針對其他層(諸如含鈷材料、銅互連件及低k介電材料)上方之含鋁材料(例如,氧化鋁)而具有蝕刻選擇性之清潔組合物。此外,本文中描述使用該等清潔組合物自微電子裝置有效地去除蝕刻後殘留物及含鋁蝕刻停止層(包含氧化鋁)之方法。 為方便參考,「微電子裝置」對應於半導體基板、平板顯示器、相變記憶體裝置、太陽能板及包含太陽能電池裝置、光伏打裝置及微機電系統(MEMS)之其他產品,其被製造用於微電子裝置、積體電路、能量收集或電腦晶片應用。應瞭解,術語「微電子裝置」、「微電子基板」及「微電子裝置結構」並不意欲以任何方式限制,並包含將最終變成一微電子裝置或微電子總成之任何基板或結構。微電子裝置可經圖案化、經覆蓋、為一控制及/或一測試裝置。 如本文中所使用,「約」旨在對應於陳述值之±5%。 「基本上缺乏」在本文中定義為小於2重量%,較佳小於1重量%,更佳小於0.5重量%,甚至更佳小於0.1重量%,且最佳0重量%。 如本文中所定義,「含鋁材料」包含含鋁蝕刻停止層(例如,氧化鋁或氮化鋁)。 如本文中所定義,「氧化鋁」可由Alx
Oy
表示,該式指定氧化鋁可具有不同化學計量並可包含不同鋁之氧化物(例如,Al2
O3
),此取決於原始含鋁反應物及沈積之方法,以及任何雜質之存在。可在物理氣相沈積(PVD)、原子層沈積(ALD)或化學氣相沈積(CVD)下沈積氧化鋁。 如本文中所定義,「低k介電材料」對應於用作一分層微電子裝置中之一介電材料之任何材料,其中材料具有小於約3.5之一介電常數。低k介電材料包含超低k介電材料。較佳地,低k介電材料包含低極性材料(諸如含矽有機聚合物、含矽混合有機/無機材料、有機矽酸鹽玻璃(OSG)、原矽酸四乙酯(TEOS)、氟化矽酸鹽玻璃(FSG)、二氧化矽及碳摻雜氧化物(CDO)玻璃)。應明白,低k介電材料可具有不同密度及不同孔隙率。 如本文中所描述,「二氧化矽」或「SiO2
」材料對應於自使用商業上可購得之前驅物(諸如SiLK™、AURORA™、CORAL™或BLACK DIAMOND™)沈積之氧化矽前驅物來源(例如,TEOS)、熱沈積氧化矽或碳摻雜氧化物(CDO)沈積之材料。出於此描述之目的,「二氧化矽」意指廣泛地包含SiO2
、CDO類、矽氧烷及熱氧化物。二氧化矽或SiO2
材料對應於純二氧化矽(SiO2
)以及包含結構中之雜質之不純二氧化矽。 如本文中所使用之「蝕刻後殘留物」對應於氣相電漿蝕刻製程(例如,BEOL雙鑲嵌製程)之後剩餘的材料。蝕刻後殘留物本質上可為有機的、有機金屬的(例如,有機矽的)或無機的,且可包含(例如)一含矽材料、一含鈦材料、一含氮材料、一含氧材料、一聚合物殘留物材料、一含銅殘留物材料(包含氧化銅殘留物)、一含鎢殘留物材料、一含鈷殘留物材料、一蝕刻氣體殘留物(諸如氯及氟及其等組合物)。 如本文中所使用,用於自其上具有該(等)材料之一微電子裝置去除含鋁材料及/或蝕刻後殘留物之「適用性」對應於自微電子裝置至少部分去除該等含鋁材料及/或(若干)蝕刻後殘留物材料。較佳地,使用本文中描述之組合物自微電子裝置去除至少約90%之(若干)材料,更佳至少95%之(若干)材料,且最佳至少99%之(若干)材料。 本發明之組合物可以多種特定調配物體現,如下文所更完全描述。 在所有此等組合物中,其中參考包含一零下限之重量百分比範圍中論述組合物之特定成分,應瞭解,此等成分可存在或不存在於組合物之各種特定實施例中,且在此等成分存在之例項中,該層成分可基於採用此等成分之組合物之總重量以低至0.00001重量%之濃度存在。 在一第一態樣中,描述一種清潔組合物,其中該清潔組合物係水,且包括:(a)一濃縮物,其包括至少一個金屬腐蝕抑制劑、至少一個蝕刻劑來源、至少一個二氧化矽來源、至少一個螯合劑及至少一個溶劑、由以上物質構成或基本上由以上物質構成,及(b)至少一個氧化劑,其中該濃縮物與至少一個氧化劑組合以形成該清潔組合物,其中該清潔組合物適合於自其上具有相同材料之一微電子裝置之表面去除蝕刻後殘留物及含鋁材料。蝕刻後殘留物可包括選自由下列構成之群之至少一個物質:含鈦殘留物、聚合物殘留物、含銅殘留物、含鈷殘留物、含矽殘留物及其等組合。 在本發明之一些版本中,蝕刻劑來源可包含氫氧化銨,或具有通式NR1
R2
R3
R4
OH之氫氧化四烷基銨鹼,其中R1
、R2
、R3
及R4
可彼此相同或彼此不同,並且係選自由下列構成之群:氫、直鏈或分支C1
-C6
烷基(例如,甲基、乙基、丙基、丁基、戊基及己基)基團、C1
-C6
羥基烷基(例如,羥甲基、羥乙基、羥丙基、羥丁基、羥戊基及羥己基)基團,及替代或未替代C6
-C10
芳基基團(例如,苄基基團)。商業上可購得之氫氧化四烷基銨類包含:氫氧化四甲基銨(TMAH)、氫氧化四乙基銨(TEAH)、氫氧化四丙基銨(TPAH)、氫氧化四丁基銨(TBAH)、氫氧化三丁基甲基銨(TBMAH)、氫氧化苄基三甲基銨(BTMAH)、氫氧化膽鹼、氫氧化乙基三甲基銨、氫氧化三(2-羥乙基)甲基銨、氫氧化二乙基二甲基銨,及其等可用組合。替代地,蝕刻劑來源可為季三烷醇胺鹼(包含(但不限於)四級胺之鹽(諸如三甲基丙醇胺、三乙基乙醇胺、二甲基乙基乙醇胺、二乙基甲基乙醇胺、二甲基乙基丙醇胺、二乙基甲基丙醇胺及三乙基丙醇胺))。一或多個蝕刻劑來源可包括基於濃縮物之總重量之濃縮物之約0.1重量%與約20重量%之間。在一些實施例中,一或多個蝕刻劑來源可包括基於濃縮物之總重量之濃縮物之約0.1重量%與約10重量%之間。在其他實施例中,一或多個蝕刻劑來源可包括基於濃縮物之總重量之濃縮物之約10重量%與約20重量%之間。較佳地,至少一個蝕刻劑來源包括氫氧化膽鹼。 金屬腐蝕抑制劑可用於保護接觸金屬(諸如Cu及Co)。金屬腐蝕抑制劑可包括一或多個腐蝕抑制劑、由一或多個腐蝕抑制劑構成,或基本上由一或多個腐蝕抑制劑構成,該一或多個腐蝕抑制劑包含(但不限於):5-胺基四唑、5-苯基-苯并三唑、1H-四唑-5-乙酸、1-苯基-2-四唑啉-5-硫酮、苯并咪唑、甲基四唑、吡唑類、5-胺基-1,3,4-噻二唑-2-硫醇(ATDT)、苯并三唑(BTA)、1,2,4-三唑(TAZ)、1,2,3-三唑、甲苯基三唑、5-甲基-苯并三唑(mBTA)、5-苯基-苯并三唑、5-硝基-苯并三唑、苯并三唑羧酸、3-胺基-5-巰基-1,2,4-三唑、1-胺基-1,2,4-三唑、羥基苯並三唑、2-(5-胺基-戊基)-苯并三唑、1-胺基-1,2,3-三唑、1-胺基-5-甲基-1,2,3-三唑、3-胺基-1,2,4-三唑(3-ATA)、3-巰基-1,2,4-三唑、3-異丙基-1,2,4-三唑、5-苯基硫醇-苯并三唑、鹵代-苯并三唑類(鹵基=F、Cl、Br或I)、萘并三唑、2-巰基苯并咪唑(MBI)、2-巰基苯并噻唑、4-甲基-2-苯基咪唑、2-巰基噻唑啉、5-胺基-1,2,4-三唑(5-ATA)、3-胺基-5-巰基-1,2,4-三唑、戊四唑、5-苯基-1H-四唑、5-苄基-1H-四唑、2,4-二胺基-6-甲基-1,3,5-三嗪、噻唑、三嗪、甲基四唑、1,3-二甲基-2-咪唑啶酮、1,5-亞戊基四、1-苯基-5-巰基四唑、二胺基甲基三嗪、咪唑啉硫酮、4-甲基-4H-1,2,4-三唑-3-硫酮、4-胺基-4H-1,2,4-三唑、3-胺基-5-甲硫基-1H-1,2,4-三唑、苯并噻唑、咪唑、吲唑、腺嘌呤、腺苷、咔唑,及其等組合物。濃縮物中之(若干)腐蝕抑制劑之量之範圍係提供約2Å/min或更少之一基本上不依賴於抑制劑之Cu蝕刻速率,及約2Å/min或更少之一鈷蝕刻速率之一量,如在浸沉於具有清潔組合物(即,包括至少一個氧化劑)之燒杯中的試樣塊樣品上所量測。例如,濃縮物中之一或多個腐蝕抑制劑之量可係基於濃縮物之總重量,而在自約0.01重量%至約5重量%之一範圍中。在其他實施例中,濃縮物中之一或多個腐蝕抑制劑之量係基於濃縮物之總重量,可為約0.1重量%至約2重量%或約2重量%至約5重量%。較佳地,至少一個腐蝕抑制劑包括TAZ、mBTA、甲苯基三唑或其等任何組合。 螯合劑或金屬錯合劑可包含(但不限於):4-(2-羥乙基)嗎啉(HEM)、1,2-環己二胺-N,N,N´,N´-四乙酸(CDTA)、乙二胺四乙酸(EDTA)、間二甲苯二胺(MXDA)、亞胺基二乙酸(IDA)、2-(羥乙基)亞胺基二乙酸(HIDA)、次氮基三乙酸、硫脲、1,1,3,3-四甲基脲、尿素、脲衍生物、尿酸、丙胺酸、精氨酸、天冬醯胺酸、天冬胺酸、半胱胺酸、麩胺酸、穀胺醯胺、組胺酸、異亮胺酸、亮胺酸、離胺酸、甲硫胺酸、苯丙胺酸、脯胺酸、絲胺酸、蘇胺酸、色胺酸、酪胺酸、纈胺酸、膦酸酯類(例如,1-羥基伸乙烯基-1,1-二膦酸(HEDP)、1,5,9-三氮雜環十二烷-N,N',N"-三(亞甲基膦酸) (DOTRP)、1,4,7,10-四氮雜環十二烷-N,N',N",N'"-四(亞甲基膦酸) (DOTP)、氮基叁(亞甲基)三膦酸、二伸乙基三胺五(亞甲基膦酸) (DETAP)、胺基三(亞甲基膦酸)、雙(六亞甲基)三胺伸戊基膦酸、1,4,7-三氮雜環壬烷-N,N',N"-三(亞甲基膦酸) (NOTP)、羥乙基膦酸酯、氮基叁(亞甲基)膦酸、2-膦醯基-丁烷-1,2,3,4-四羧酸、羰乙基膦酸、胺基乙基膦酸、嘉磷塞(glyphosate)、乙二胺四(亞甲基膦酸)苯基膦酸、其等鹽及其等衍生物)、羧酸類(例如,草酸、琥珀酸、馬來酸、蘋果酸、丙二酸、已二酸、鄰苯二甲酸、檸檬酸、檸檬酸鈉、檸檬酸鉀、檸檬酸銨、丙三羧酸、三甲基矽烷基丙酸、酒石酸、葡糖醛酸及2-羧基吡啶)、磷酸鹽、磷酸、磺酸、雜環胺N-氧化物類(例如,3,5-二甲基吡啶N-氧化物、3-甲基吡啶N-氧化物、4-甲基嗎啉-N-氧化物(NMMO)、2-甲基吡啶N-氧化物、N-甲基哌啶-N-氧化物及4-乙基嗎啉-N-氧化物)及其等組合物。濃縮物中之一或多個螯合劑之量可基於濃縮物之總重量而在自約0.01重量%至約10重量%之一範圍中。在其他實施例中,濃縮物中之一或多個螯合劑之量可基於濃縮物之總重量而為約0.1重量%至約5重量%或約5重量%至約10重量%。應注意,當至少一個螯合劑係雜環胺N-氧化物時,雜環胺N-氧化物可在一氧化劑存在下使用一未氧化前驅物分子原位製造。此外,應瞭解,雜環胺N-氧化物類亦可作用氧化劑,然而,出於本發明之目的,該等雜環胺N-氧化物類存在於濃縮物中並特徵化為螯合劑。較佳地,至少一個螯合劑包括EDTA、CDTA、HEDP、草酸及NMMO之一者,較佳包括CDTA、HEDP及NMMO之一者。 至少一個二氧化矽來源較佳包括氟矽酸(H2
SiF6
)。應瞭解,可藉由組合至少一個氟化物來源(例如,HF、氟化銨、二氟化銨、氟化四烷基銨(NR1
R2
R3
R4
F)而原位製備氟矽酸,其中R1
、R2
、R3
、R4
可彼此相同或彼此不同,並選自由下列構成之群:氫、直鏈或分支C1
-C6
烷基(例如,甲基、乙基、丙基、丁基、戊基及己基)基團、C1
-C6
羥基烷基(例如,羥乙基及羥丙基)基團、具有至少一個含矽化合物(諸如烷氧基矽烷、六氟矽酸銨、矽酸鈉、矽酸四甲基銨(TMAS)及其等組合物)之替代或未替代芳基基團(例如,苄基)、弱鹼及其等組合物)。預期的烷氧基矽烷具有通式SiR1
R2
R3
R4
,其中R1
、R2
、R3
及R4
彼此相同或彼此不同,並選自由下列構成之群:直鏈C1
-C6
烷基(例如,甲基、乙基、丙基、丁基、戊基及己基)基團、分支C1
-C6
烷基基團、C1
-C6
烷氧基(例如,甲氧基、乙氧基、丙氧基、丁氧基、戊氧基及己氧基)基團、苯基基團及其等組合物。熟習此項技術者應瞭解,特徵化為烷氧基矽烷,R1
、R2
、R3
或R4
之至少一者必須為C1
-C6
烷氧基基團。預期的烷氧基矽烷包含:甲基三甲氧基矽烷、二甲基二甲氧基矽烷、苯基三甲氧基矽烷、四乙氧基矽烷(TEOS)、N-丙基三甲氧基矽烷、N-丙基三乙氧基矽烷、己基三甲氧基矽烷、己基三乙氧基矽烷及其等組合物。濃縮物中之一或多個二氧化矽來源之量可基於濃縮物之總重量而在自約0.01重量%至約5重量%之一範圍中。在其他實施例中,濃縮物中之一或多個二氧化矽來源之量基於濃縮物之總重量可為約0.01重量%至約2重量%或約2重量%至約5重量%。 至少一個溶劑較佳包括水,甚至更佳包括去離子水。水可包括基於清潔組合物之總重量之清潔組合物之自約60重量%至約98重量%。應瞭解,在濃縮物中可存在較少水,但可與至少一個氧化劑同時添加至清潔組合物,以產生具有前述量之水之一清潔組合物。 為形成本文中描述之清潔組合物,濃縮物係與至少一個氧化劑混合。本文中預期的氧化劑包含(但不限於)過氧化氫(H2
O2
)、FeCl3
、FeF3
、Fe(NO3
)3
、Sr(NO3
)2
、CoF3
、MnF3
、過硫酸氫鉀複合鹽(oxone)、(2KHSO5
·KHSO4
·K2
SO4
)、硝酸(HNO3
)、銨多原子鹽類(例如,過氧單硫酸銨、亞氯酸銨(NH4
ClO2
)、氯酸銨(NH4
ClO3
)、碘酸銨(NH4
IO3
)、硝酸銨(NH4
NO3
)、過硼酸銨(NH4
BO3
)、高氯酸銨(NH4
ClO4
)、高碘酸銨(NH4
IO4
)、過硫酸銨((NH4
)2
S2
O8
)、次氯酸銨(NH4
ClO)及鎢酸銨((NH4
)10
H2
(W2
O7
))、鈉多原子鹽類(例如,過硫酸鈉(Na2
S2
O8
)、次氯酸鈉(NaClO)及過硼酸鈉)、鉀多原子鹽類(例如,碘酸鉀(KIO3
)、高錳酸鉀(KMnO4
)、過硫酸鉀(K2
S2
O8
)及次氯酸鉀(KClO))、四甲基銨多原子鹽類(例如,亞氯酸四甲基銨((N(CH3
)4
)ClO2
)、四甲基氯酸銨((N(CH3
)4
)ClO3
)、四甲基碘酸銨((N(CH3
)4
)IO3
)、四甲基過硼酸銨((N(CH3
)4
)BO3
)、四甲基高氯酸銨((N(CH3
)4
)ClO4
)、四甲基高碘酸銨((N(CH3
)4
)IO4
)及四甲基過硫酸銨((N(CH3
)4
)S2
O8
))、四丁基銨多原子鹽類(例如,四丁基過氧單硫酸銨)、過氧單硫酸、硝酸鐵(Fe(NO3
)3
)、過氧化氫脲((CO(NH2
)2
)H2
O2
)、過乙酸(CH3
(CO)OOH)、1,4-苯并醌、甲苯醌、二甲基-1,4-苯并醌、四氯醌、嘌呤,及其等組合物。較佳地,至少一個氧化劑包括過氧化氫。 可藉由組合濃縮物與氧化劑(例如,藉由將至少一個氧化劑添加至濃縮物)來製備清潔組合物。例如,可藉由將10份濃縮物與自約0.1份至約1份之間的氧化劑混合來製備清潔組合物。在一特定較佳實施例中,至少一個氧化劑之量基於清潔組合物之總重量係小於約10重量%,甚至較佳係小於約8重量%。在一項實施例中,清潔組合物可包括過氧化氫及濃縮物。例如,可藉由將10份濃縮物與自30% H2
O2
之約0.1份多至30% H2
O2
之約3份之間混合來製備清潔組合物。 在將濃縮物與至少一個氧化劑組合之後,清潔組合物之pH係在約6至約10之一範圍中,較佳係在約6至約9.5之一範圍中,甚至更佳係在自約6至約9之一範圍中。在另一實施例中,在將濃縮物與至少一個氧化劑組合之後,清潔組合物之pH較佳係在大於7至約9.5之一範圍中,最好係大於7至約9。 第一態樣之清潔組合物宜係實質上缺乏金屬鹵化物、偕胺肟化合物、有機溶劑及羧酸鹽中之至少一者。如本文中所定義,「金屬鹵化物」包含式WzMXy,其中M係選自Si、Ge、Sn、Pt、P、B、Au、Ir、Os、Cr、Ti、Zr、Rh、Ru及Sb之群之一金屬;X係選自F、Cl、Br及I之一鹵化物;W係選自H、鹼或鹼土金屬及無金屬離子之氫氧化物鹼部分;y係取決於金屬鹵化物之自4至6之一符號;及z係1、2或3之一符號。如本文中所定義,「羧酸鹽」包含選自由下列構成之群之檸檬酸三鉀單水合物、酒石酸鉀鈉四水合物、L-乳酸鉀及羥酸銨:草酸銨、乳酸銨、酒石酸銨、檸檬酸三銨、乙酸銨、氨基甲酸銨、碳酸銨、苯甲酸銨、乙二胺四乙酸銨、乙二胺四乙酸二銨、乙二胺四乙酸三銨、乙二胺四乙酸四銨、丁二酸銨、甲酸銨及1-H-吡唑-3-羥酸銨。出於本發明之目的,「有機溶劑」包含二甲基亞碸、乙二醇、乙二醇烷基醚、二甘醇烷基醚、三甘醇烷基醚、丙二醇烷基醚、N取代之吡咯啶酮、乙二胺及伸乙基三胺。 在一較佳實施例中,清潔組合物經調配以確保氧化鋁蝕刻速率大於約10Å/min,較佳大於約20Å/min,且最佳在自約20至約30Å/min之一範圍中。有利地,本文中描述之清潔組合物適合於自其上具有該(等)材料之一微電子裝置去除含鋁材料及/或蝕刻後殘留物,同時不實質上損壞亦不存在於微電子裝置上之含鈷層、銅或低k介電層(包含超低k介電層)。 本文中描述之清潔組合物藉由將濃縮物之各別組分與至少一個氧化劑簡單添加並混合至均相條件來輕易調配。替代地,本文中描述之清潔組合物藉由將濃縮物之各別組分與至少一個氧化劑及附加水簡單添加並混合至均相條件來輕易調配。此外,組合物可輕易調配為在使用時混合之多部分配方。多部分配方之個別部分可在工具處混合或在工具上游之一儲存罐中混合。各別組分之濃度可以組合物之特定倍數(即,更稀或更濃)廣泛地變化,且應瞭解,本文中描述之組合物可不同地及替代地包括與本文中揭示一致之組分之任何組合物、由以上物質構成或基本上由以上物質構成。 因此,一第二態樣係關於一種試劑盒,該試劑盒在一或多個容器中包含經調適以形成本文中描述之組合物之一或多個成分。該試劑盒可在一或多個容器中包含一濃縮物,該濃縮物包括至少一個金屬腐蝕抑制劑、至少一個蝕刻劑來源、至少一個二氧化矽來源、至少一個螯合劑及至少一個溶劑、由以上物質構成或基本上由以上物質構成,以用於在製作或使用時與至少一個氧化劑組合。替代地,該試劑盒可在一或多個容器中包含一濃縮物,該濃縮物包括至少一個金屬腐蝕抑制劑、至少一個蝕刻劑來源、至少一個二氧化矽來源、至少一個螯合劑及至少一個溶劑、由以上物質構成或基本上由以上物質構成,以用於在製作或使用時與至少一個氧化劑及附加水組合。試劑盒之容器必須適合於儲存及運輸該等清潔組合物,且可為(例如)NOWPak®容器(美國馬薩諸賽州比爾里卡之Entegris, Inc.)。 容納清潔組合物之成分之一或多個容器較佳包含用於使該一或多個容器中之成分流體連通以便摻合及分配之構件。例如,參考NOWPak®容器,可將氣壓施加至該一或多個容器中之一襯板之外部,以導致襯板之內容物之至少一部分被排出,並因此實現流體連通以便摻合及分配。替代地,可將氣壓施加至一習知可加壓容器之頭部空間,或可使用一泵來實現流體連通。另外,系統較佳包含用於將經摻合清潔組合物分配至一處理工具之一分配口。 在一第三態樣,第一態樣之清潔組合物用於自其上具有相同材料之微電子裝置去除蝕刻後殘留物及含鋁材料(例如,氧化鋁)。清潔組合物通常在自約20℃至約90℃,較佳約30℃至約70℃,且最佳約35℃至約65℃之一範圍中之溫度下與裝置靜態或動態接觸達自約1分鐘至約30分鐘,較佳自約1分鐘至約10分鐘之一時間。此等接觸時間及溫度係闡釋性的,且可採用任何其他適合時間及溫度條件,從而自裝置有效地至少部分去除蝕刻後殘留物及含鋁材料。自微電子裝置「至少部分去除」殘留物及含鋁材料對應於去除至少90%之材料,較佳至少95%之材料。最佳地,使用本文中描述之清潔組合物去除至少99%之該材料。 在蝕刻後殘留物及含鋁材料去除應用中,可以任何方式(例如,藉由噴塗待清潔之裝置之表面上之組合物、藉由將待清潔之裝置浸漬於組合物之一靜態或動態體積中、藉由使待清潔之裝置與其上吸收有組合物之另一材料(例如,一墊或纖維吸附劑施加器元件)接觸或藉由使組合物與待清潔之裝置去除接觸之任何其他適合手段、方法或技術)將清潔組合物施加至待清潔之裝置。此外,本文中預期批式或單晶圓處理。 在達成期望的殘留物及含鋁材料去除之後,清潔組合物可自其先前已施加之裝置輕易去除,此在本文中描述之組合物之一給定最終用途應用中可為期望的及有效的。較佳地,可使用一沖洗溶液,其中沖洗溶液包含去離子水。此後,可使用氮氣或一旋轉乾燥循環乾燥裝置。 又另一態樣係關於根據本文中描述之方法製造之改良微電子裝置及含有此等微電子裝置之產品。 一又進一步態樣係關於製造包括一微電子裝置之一物件之方法,該方法包括:使微電子裝置與一清潔組合物接觸足夠時間以清潔來自其上具有該殘留物及材料之微電子裝置之蝕刻後殘留物及含鋁材料,並使用本文中描述之一清潔組合物將該微電子裝置併入於該物件中。 另一態樣係關於一種製造品,該製造品包括一清潔組合物、一微電子裝置晶圓及選自由蝕刻後殘留物、含鋁材料及其等組合物構成之群之材料,其中該清潔組合物包括:(a)一濃縮物,其包括至少一個金屬腐蝕抑制劑、至少一個蝕刻劑來源、至少一個二氧化矽來源、至少一個螯合劑及至少一個溶劑、由以上物質構成或基本上由以上物質構成,及(b)至少一個氧化劑。 雖然已相對於一或多個實施方案而展示及描述了本發明,但是其他熟悉此項技術者將在閱讀及理解本說明書及隨附圖式之後進行等效更改及修改。本發明包含所有此等修改及更改,且僅由以下申請專利範圍之範疇限制。此外,雖然可能已經關於若干實施方案之僅一者揭示了本發明之一特定特徵或態樣,但此特徵或態樣可與任何給定或特定應用所期望或有利於任何給定或特定應用之其他實施方案之一或多個其他特徵或態樣組合。此外,就在詳細描述或申請專利範圍中使用的術語「包含」、「具有」或其變體而言,此等術語意欲以類似於術語「包括」之方式包含。此外,術語「例示性」僅僅意味著意指一實例,而非最佳實例。亦應瞭解,為了簡單且便於理解之目的,本文中描繪之特徵、層及/或元件被圖解說明為相對於彼此之特定尺寸及/或定向,且實際尺寸及/或定向可與本文中圖解說明之尺寸及/或定向基本上不同。
Claims (10)
- 一種清潔組合物,其包括:(a)一濃縮物,其包括至少一個金屬腐蝕抑制劑、至少一個蝕刻劑來源、至少一個二氧化矽來源、至少一個螯合劑,及至少一個溶劑,及(b)至少一個氧化劑,其中該清潔組合物適合於自其上具有相同材料之一微電子裝置之一表面去除蝕刻後殘留物及含鋁材料。
- 如請求項1之清潔組合物,其中該至少一個蝕刻劑來源包括氫氧化銨或氫氧化四烷基銨。
- 如請求項2之清潔組合物,其中該至少一個蝕刻劑來源包括氫氧化膽鹼。
- 如請求項1之清潔組合物,其中該至少一個金屬腐蝕抑制劑包括1,2,4-三唑(TAZ)、5-甲基-苯并三唑(mBTA)、甲苯基三唑,或其等之組合物。
- 如請求項1之清潔組合物,其中該至少一個螯合劑係乙二胺四乙酸(EDTA)、1,2-環己二胺-N,N,N´,N´-四乙酸(CDTA)、1-羥基亞乙基-1,1-二膦酸(HEDP)、草酸,或4-甲基嗎啉-N-氧化物(NMMO)。
- 如請求項1之清潔組合物,其中該至少一個二氧化矽來源包括氟矽酸(H2 SiF6 )。
- 如請求項1之清潔組合物,其中該至少一個氧化劑包括過氧化氫。
- 如請求項1之清潔組合物,其中該至少一個溶劑包括水。
- 一種自一微電子裝置去除材料之方法,該微電子裝置上具有該材料,該方法包括: 使該微電子裝置之一表面與一清潔組合物接觸,該清潔組合物包括:(a)一濃縮物,其包括至少一個金屬腐蝕抑制劑、至少一個蝕刻劑來源、至少一個二氧化矽來源、至少一個螯合劑,及至少一個溶劑,及(b)至少一個氧化劑,及 自該微電子裝置至少部分去除蝕刻後殘留物及含鋁材料,其中該微電子裝置包括含鈷層、低k介電層,及銅。
- 一種包括一或多個容器之試劑盒,該一或多個容器中具有用於自一微電子裝置至少部分去除蝕刻後殘留物及含鋁材料的成分,其中該試劑盒之一第一容器包含一濃縮物,該濃縮物包括至少一個金屬腐蝕抑制劑、至少一個蝕刻劑來源、至少一個二氧化矽來源、至少一個螯合劑,及至少一個溶劑。
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