JP6966570B2 - 化学機械研磨後配合物及び使用方法 - Google Patents
化学機械研磨後配合物及び使用方法 Download PDFInfo
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- JP6966570B2 JP6966570B2 JP2019555603A JP2019555603A JP6966570B2 JP 6966570 B2 JP6966570 B2 JP 6966570B2 JP 2019555603 A JP2019555603 A JP 2019555603A JP 2019555603 A JP2019555603 A JP 2019555603A JP 6966570 B2 JP6966570 B2 JP 6966570B2
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- acid
- cleaning composition
- corrosion inhibitor
- ether
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- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
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- XCRBXWCUXJNEFX-UHFFFAOYSA-N peroxybenzoic acid Chemical compound OOC(=O)C1=CC=CC=C1 XCRBXWCUXJNEFX-UHFFFAOYSA-N 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
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- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
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- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
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- 150000003333 secondary alcohols Chemical class 0.000 description 1
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- 235000019812 sodium carboxymethyl cellulose Nutrition 0.000 description 1
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- ZOMVKCHODRHQEV-UHFFFAOYSA-M tetraethylphosphanium;hydroxide Chemical compound [OH-].CC[P+](CC)(CC)CC ZOMVKCHODRHQEV-UHFFFAOYSA-M 0.000 description 1
- CRUVUWATNULHFA-UHFFFAOYSA-M tetramethylphosphanium;hydroxide Chemical compound [OH-].C[P+](C)(C)C CRUVUWATNULHFA-UHFFFAOYSA-M 0.000 description 1
- OORMKVJAUGZYKP-UHFFFAOYSA-M tetrapropylphosphanium;hydroxide Chemical compound [OH-].CCC[P+](CCC)(CCC)CCC OORMKVJAUGZYKP-UHFFFAOYSA-M 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 description 1
- GKODZWOPPOTFGA-UHFFFAOYSA-N tris(hydroxyethyl)aminomethane Chemical compound OCCC(N)(CCO)CCO GKODZWOPPOTFGA-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000000230 xanthan gum Substances 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0047—Other compounding ingredients characterised by their effect pH regulated compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2068—Ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2082—Polycarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/28—Heterocyclic compounds containing nitrogen in the ring
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/33—Amino carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/36—Organic compounds containing phosphorus
- C11D3/361—Phosphonates, phosphinates or phosphonites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
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Description
洗浄の有効性=(洗浄前の物体の数−洗浄後の物体の数)/洗浄前の物体の数×100
注目すべきことに、洗浄の有効性の測定法は、単なる例として記載されており、それに限定されるものではない。あるいは、洗浄の有効性は、粒子状物質によって覆われた全表面の割合と考えてもよい。例えば、z平面走査を実施するようAFMをプログラムして一定の高さの閾値を上回る対象のトポグラフィー領域を特定し、次いで、対象の前記領域によって覆われた全表面の領域を計算してもよい。洗浄後に対象の前記領域によって覆われた面積が小さいほど、洗浄組成物がより効果的であることを当業者なら容易に理解するであろう。好ましくは、本明細書に記載の組成物を使用して、残留物/汚染物の少なくとも75%がマイクロ電子デバイスから除去され、より好ましくは残留物/汚染物の少なくとも90%、さらにより好ましくは少なくとも95%、最も好ましくは少なくとも99%が除去される。
−CMPスラリーを使用してマイクロ電子デバイスを研磨することと、
−CMP後残留物及び汚染物をマイクロ電子デバイスから除去するのに十分な時間、マイクロ電子デバイスを本明細書に記載の洗浄組成物と接触させて、CMP後残留物含有組成物を生成することと、
−マイクロ電子デバイスを実質的に洗浄するのに十分な時間の間、マイクロ電子デバイスを洗浄組成物と連続的に接触させることと
を含み、洗浄組成物が、少なくとも一種の有機アミン、水、少なくとも一種のpH調整剤、少なくとも一種の有機添加剤、少なくとも一種の腐食抑制剤、任意選択的に少なくとも一種の緩衝剤及び任意選択的に少なくとも一種の還元剤を含み、それらからなり、又はそれらから実質的になる、方法が記載される。
表1に示す以下の溶液を調製し、実験前に脱イオン水で60:1に希釈した。配合物Aは、0.05重量%システイン、0.16重量%水酸化コリン、4.5重量%MEA、残部の水を含んでいた。配合物B〜Lは、0.2重量%シュウ酸、0.1重量%システイン、4.950重量%MEA、配合物中で13.2のpHを得るための水酸化コリン及びKOHの混合物、並びに表1に一覧にした残りの成分を含んでいた。溶液を試験して、BTA除去効率(パーセント)及び銅エッチ速度(Å/min)を決定した。その結果も表1に示す。BTA除去効率実験は、その上で成長させたBTA層を有する銅基板を使用して実施した。BTAを含む基板を室温の表1の溶液に浸漬した。エリプソメトリーを使用して、溶液との接触前後にBTA膜厚を決定した。銅エッチ速度実験も銅基板を使用して室温で実施した。
表2に示す以下の溶液を調製し、実験前に脱イオン水で60:1に希釈した。配合物AA〜KKは、0.2重量%シュウ酸、0.075重量%システイン、4.95重量%MEA、配合物中で13.2のpHを得るための水酸化コリン及びKOHの混合物(配合物CCを除く)、並びに表2に一覧にした残りの成分を含んでいた。注目すべきことに、配合物CCは、約13.7のpHを生じる水酸化コリン及びKOHの混合物を含んでいた。溶液を試験して、BTA除去効率(パーセント)、銅エッチ速度(Å/min)及び低誘電率エッチ速度(Å/min)を決定した。その結果も表2に示す。BTA除去効率実験は、その上で成長させたBTA層を有する銅基板を使用して実施した。BTAを含む基板を室温の表2の溶液に浸漬した。エリプソメトリーを使用して、溶液との接触前後にBTA膜厚を決定した。銅エッチ速度実験及び低誘電率エッチ速度実験もそれぞれ低誘電率及び銅基板を使用して室温で実施した。
表3に示す以下の溶液を調製し、実験前に脱イオン水で60:1に希釈した。配合物LL〜OOは、0.2重量%シュウ酸、0.1重量%システイン、4.95重量%MEA、配合物中で13.2のpHを得るための水酸化コリン及びKOHの混合物、並びに表3に一覧にした残りの成分を含んでいた。濃縮物のpHは約13.2であった。溶液を試験して、BTA除去効率(パーセント)及び銅エッチ速度(Å/min)を決定した。その結果も表3に示す。BTA除去効率実験は、その上で成長させたBTA層を有する銅基板を使用して実施した。BTAを含む基板を室温の表3の溶液に浸漬した。エリプソメトリーを使用して、溶液との接触前後にBTA膜厚を決定した。銅エッチ速度実験も銅基板を使用して室温で実施した。
Claims (11)
- 少なくとも一種の有機アミン、水、少なくとも一種のpH調整剤、少なくとも一種の有機添加剤及び少なくとも一種の腐食抑制剤を含む洗浄組成物であって、
腐食抑制剤が、酢酸、アセトンオキシム、アクリル酸、アジピン酸、アラニン、アルギニン、アスパラギン、アスパラギン酸、ベタイン、ジメチルグリオキシム、ギ酸、フマル酸、グルコン酸、グルタミン酸、グルタミン、グルタル酸、グリセリン酸、グリセロール、グリコール酸、グリオキシル酸、ヒスチジン、イミノ二酢酸、イソフタル酸、イタコン酸、乳酸、ロイシン、リジン、マレイン酸、無水マレイン酸、リンゴ酸、マロン酸、マンデル酸、2,4−ペンタンジオン、フェニル酢酸、フェニルアラニン、フタル酸、プロリン、プロピオン酸、ピロカテコール、ピロメリト酸、キナ酸、セリン、ソルビトール、コハク酸、酒石酸、テレフタル酸、トリメリット酸、トリメシン酸、チロシン、バリン、キシリトール、シュウ酸、タンニン酸、ピコリン酸、1,3−シクロペンタンジオン、カテコール、ピロガロール、レゾルシノール、ヒドロキノン、シアヌル酸、バルビツル酸、1,2−ジメチルバルビツル酸、ピルビン酸、プロパンチオール、ベンゾヒドロキサム酸類、2,5−ジカルボキシピリジン、4−(2−ヒドロキシエチル)モルホリン(HEM)、N−アミノエチルピペラジン(N−AEP)、エチレンジアミン四酢酸(EDTA)、1,2−シクロヘキサンジアミン−N,N,N’,N’−四酢酸(CDTA)、N−(ヒドロキシエチル)−エチレンジアミン三酢酸(HEdTA)、イミノ二酢酸(IDA)、2−(ヒドロキシエチル)イミノ二酢酸(HIDA)、ニトリロ三酢酸、チオウレア、1,1,3,3−テトラメチル尿素、尿素、尿素誘導体、グリシン、システイン、グルタミン酸、イソロイシン、メチオニン、ピペラジン、N−(2−アミノエチル)ピペラジン、ピロリジン、スレオニン、トリプトファン、サリチル酸、p−トルエンスルホン酸、サリチルヒドロキサム酸、5−スルホサリチル酸及びそれらの組合せからなる群から選択され、腐食抑制剤に対する有機アミンの重量パーセント比が1から100の範囲であり、腐食抑制剤に対するpH調整剤の重量パーセント比が0.1から50の範囲であり、腐食抑制剤に対する有機添加剤の重量パーセント比が0.01から50の範囲である、洗浄組成物。 - 少なくとも一種の有機アミンが、一般式NR1R2R3(式中、R1、R2及びR3は、互いに同じでも、異なっていてもよく、水素、直鎖又は分岐鎖のC1−C6アルキル、直鎖又は分岐鎖のC1−C6アルコール、及び直鎖又は分岐鎖のエーテルからなる群から選択される。)を有する化学種を含む、請求項1に記載の洗浄組成物。
- 少なくとも一種の有機アミンがモノエタノールアミンを含む、請求項1に記載の洗浄組成物。
- 少なくとも一種のpH調整剤が式NR1R2R3R4OH又はPR1R2R3R4OH(式中、R1、R2、R3及びR4は、互いに同じでも、異なっていてもよく、水素、直鎖又は分岐鎖のC2−C6アルキル、C1−C6アルコキシ、及び置換又は非置換のC6−C10アリールからなる群から選択される。)を有する、請求項1に記載の洗浄組成物。
- 少なくとも一種のpH調整剤が水酸化コリンを含む、請求項1に記載の洗浄組成物。
- 少なくとも一種の腐食抑制剤が、システイン、シュウ酸、ヒスチジン又はそれらの任意の組合せを含む、請求項1に記載の洗浄組成物。
- 有機添加剤が、トリエチレングリコールモノブチルエーテル、プロピレングリコールn−ブチルエーテル、プロピレングリコールフェニルエーテル、HEDP、HEC又はそれらの任意の組合せを含む、請求項1に記載の洗浄組成物。
- アスコルビン酸、L(+)−アスコルビン酸、イソアスコルビン酸、アスコルビン酸誘導体、没食子酸、ホルムアミジンスルフィン酸、尿酸、酒石酸、システイン、D−グルコン酸カリウム、ヒドロキシルアミン、亜硝酸カリウム、炭酸グアニジン、8−ヒドロキシ−5−キノリンスルホン酸水和物及びそれらの任意の組合せからなる群から選択される化学種を含む少なくとも一種の還元剤をさらに含む、請求項1に記載の洗浄組成物。
- リン酸、リン酸二カリウム、炭酸カリウム、ホウ酸、リジン、プロリン、β−アラニン、エチレンジアミン四酢酸(EDTA)、ジエチレントリアミン五酢酸(DTPA)、ジメチルグリオキシム、(NH4)2HPO4、K2HPO4、(NH4)3PO4、K3PO4、K2HPO4/K3PO4、K2CO3/KHCO3、ヒドロキシエチリデンジホスホン酸(HEDP)及びそれらの組合せからなる群から選択される化学種を含む少なくとも一種の緩衝剤をさらに含む、請求項1に記載の洗浄組成物。
- 少なくとも一種の酸化剤;フッ化物含有源;研削材料;テトラメチルアンモニウム水酸化物;アゾール含有腐食抑制剤;没食子酸;スルホニウム化合物;アミドキシム化合物;及びそれらの組合せがない、請求項1に記載の洗浄組成物。
- 腐食抑制剤に対する有機アミンの重量パーセント比が5から50の範囲であり、腐食抑制剤に対するpH調整剤の重量パーセント比が1から30の範囲であり、腐食抑制剤に対する有機添加剤の重量パーセント比が0.1から25の範囲である、請求項1に記載の洗浄組成物。
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