TWI651396B - 選擇性蝕刻氮化鈦之組成物及方法 - Google Patents

選擇性蝕刻氮化鈦之組成物及方法 Download PDF

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Publication number
TWI651396B
TWI651396B TW103119699A TW103119699A TWI651396B TW I651396 B TWI651396 B TW I651396B TW 103119699 A TW103119699 A TW 103119699A TW 103119699 A TW103119699 A TW 103119699A TW I651396 B TWI651396 B TW I651396B
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Taiwan
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acid
composition
ammonium
ether
hydroxide
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TW103119699A
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English (en)
Chinese (zh)
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TW201504397A (zh
Inventor
陳立民
史帝芬 里皮
艾曼紐 庫帕
宋靈巖
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美商恩特葛瑞斯股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3942—Inorganic per-compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/395—Bleaching agents
    • C11D3/3956—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20—Other heavy metals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
TW103119699A 2013-06-06 2014-06-06 選擇性蝕刻氮化鈦之組成物及方法 TWI651396B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361831928P 2013-06-06 2013-06-06
US61/831,928 2013-06-06

Publications (2)

Publication Number Publication Date
TW201504397A TW201504397A (zh) 2015-02-01
TWI651396B true TWI651396B (zh) 2019-02-21

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Country Status (8)

Country Link
US (1) US10920141B2 (enExample)
EP (1) EP3004287B1 (enExample)
JP (2) JP6723152B2 (enExample)
KR (1) KR102338550B1 (enExample)
CN (2) CN111394100A (enExample)
SG (2) SG11201509933QA (enExample)
TW (1) TWI651396B (enExample)
WO (1) WO2014197808A1 (enExample)

Families Citing this family (135)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102118964B1 (ko) * 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
EP3004287B1 (en) 2013-06-06 2021-08-18 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
CN105431506A (zh) 2013-07-31 2016-03-23 高级技术材料公司 用于去除金属硬掩模和蚀刻后残余物的具有Cu/W相容性的水性制剂
KR102340516B1 (ko) 2013-08-30 2021-12-21 엔테그리스, 아이엔씨. 티타늄 니트라이드를 선택적으로 에칭하기 위한 조성물 및 방법
EP3077129B1 (en) 2013-12-06 2020-11-11 FujiFilm Electronic Materials USA, Inc. Cleaning formulation for removing residues on surfaces
TWI654340B (zh) 2013-12-16 2019-03-21 美商恩特葛瑞斯股份有限公司 Ｎｉ：ＮｉＧｅ：Ｇｅ選擇性蝕刻配方及其使用方法
WO2015095726A1 (en) 2013-12-20 2015-06-25 Entegris, Inc. Use of non-oxidizing strong acids for the removal of ion-implanted resist
KR102290209B1 (ko) 2013-12-31 2021-08-20 엔테그리스, 아이엔씨. 규소 및 게르마늄을 선택적으로 에칭하기 위한 배합물
EP3099839A4 (en) 2014-01-29 2017-10-11 Entegris, Inc. Post chemical mechanical polishing formulations and method of use
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
US9297081B2 (en) * 2014-02-21 2016-03-29 Ecolab Usa Inc. Use of neutralizing agent in olefin or styrene production
US9803162B2 (en) * 2014-04-10 2017-10-31 Mitsubishi Gas Chemical Company, Inc. Liquid composition for cleaning semiconductor device, and method for cleaning semiconductor device
CN107155367B (zh) * 2014-06-30 2021-12-21 恩特格里斯公司 利用钨及钴兼容性移除蚀刻后残余物的含水及半含水清洁剂
KR102255577B1 (ko) * 2014-08-25 2021-05-25 엘지디스플레이 주식회사 식각액 조성물
WO2016076033A1 (ja) * 2014-11-13 2016-05-19 三菱瓦斯化学株式会社 コバルトのダメージを抑制した半導体素子の洗浄液、およびこれを用いた半導体素子の洗浄方法
TWI639730B (zh) * 2015-02-13 2018-11-01 關東鑫林科技股份有限公司 Etching liquid composition and etching method using the same
US9976111B2 (en) 2015-05-01 2018-05-22 Versum Materials Us, Llc TiN hard mask and etch residual removal
JP6761166B2 (ja) * 2015-07-23 2020-09-23 セントラル硝子株式会社 ウェットエッチング方法及びエッチング液
EP3328969B1 (en) 2015-07-29 2020-04-01 Ecolab USA Inc. Heavy amine neutralizing agents for olefin or styrene production
TWI705132B (zh) * 2015-10-08 2020-09-21 日商三菱瓦斯化學股份有限公司 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法
TWI816635B (zh) * 2015-10-15 2023-10-01 日商三菱瓦斯化學股份有限公司 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法
EP3436621B1 (en) * 2016-03-29 2020-02-12 Technic France Solution and method for etching titanium based materials
US10982129B2 (en) * 2016-08-05 2021-04-20 NuGeneration Technologies, LLC Composition and method for making converter-dissolver composition for dissolving metal sulfate scales from surfaces
JP6860276B2 (ja) * 2016-09-09 2021-04-14 花王株式会社 樹脂マスク剥離用洗浄剤組成物
EP3299323B1 (en) 2016-09-23 2020-04-01 Otis Elevator Company Secondary car operating panel for elevator cars
JP6970675B2 (ja) * 2016-09-29 2021-11-24 富士フイルム株式会社 処理液および積層体の処理方法
KR101966808B1 (ko) 2016-09-30 2019-04-08 세메스 주식회사 기판 세정 조성물, 기판 처리 방법 및 기판 처리 장치
CN109790028A (zh) 2016-10-06 2019-05-21 富士胶片电子材料美国有限公司 用于移除半导体基材上残余物的清洁制剂
KR102770063B1 (ko) * 2016-11-29 2025-02-21 솔브레인 주식회사 식각용 조성물 및 식각용 조성물을 이용한 반도체 소자의 식각 방법
KR102740456B1 (ko) * 2016-11-29 2024-12-06 삼성전자주식회사 식각용 조성물 및 이를 이용한 반도체 장치 제조 방법
KR102710507B1 (ko) * 2016-12-14 2024-09-25 삼성전자주식회사 식각용 조성물 및 이를 이용한 반도체 장치 제조 방법
JP6893562B2 (ja) * 2017-01-17 2021-06-23 インテグリス・インコーポレーテッド 進歩したノードｂｅｏｌ処理のためのエッチング後残留物除去
EP3580321B1 (en) * 2017-02-10 2024-12-25 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulations
CN110475845B (zh) * 2017-03-24 2022-02-25 富士胶片电子材料美国有限公司 用于移除半导体基板上的残余物的清洁组合物
CN110462799B (zh) * 2017-03-31 2023-12-26 关东化学株式会社 钛层或含钛层的蚀刻液组合物及蚀刻方法
TWI703210B (zh) * 2017-04-11 2020-09-01 美商恩特葛瑞斯股份有限公司 化學機械研磨後調配物及使用方法
US10676646B2 (en) 2017-05-25 2020-06-09 Fujifilm Electronic Materials U.S.A., Inc. Chemical mechanical polishing slurry for cobalt applications
CN107229193B (zh) * 2017-07-25 2019-04-23 上海新阳半导体材料股份有限公司 一种清洗剂、其制备方法和应用
SG11202001057VA (en) * 2017-08-22 2020-03-30 Fujifilm Electronic Materials Usa Inc Cleaning compositions
WO2019044463A1 (ja) * 2017-08-31 2019-03-07 富士フイルム株式会社 処理液、キット、基板の洗浄方法
KR101967157B1 (ko) 2017-11-06 2019-04-09 한국원자력연구원 전극-반도체간 쇼트키 접촉 구조를 가진 방사선 센서
EP3720938A1 (en) 2017-12-08 2020-10-14 Basf Se Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process
KR102609044B1 (ko) * 2017-12-08 2023-12-01 바스프 에스이 저-k 물질, 구리 및/또는 코발트의 층의 존재하에서 알루미늄 화합물을 포함하는 층을 선택적으로 에칭하기 위한 조성물 및 방법
WO2019126155A1 (en) 2017-12-18 2019-06-27 Entegris, Inc. Chemical resistant multi-layer coatings applied by atomic layer deposition
JP6798045B2 (ja) 2018-01-16 2020-12-09 株式会社トクヤマ 次亜塩素酸イオンを含む半導体ウェハの処理液
US11365379B2 (en) * 2018-01-25 2022-06-21 Merck Patent Gmbh Photoresist remover compositions
CN111565870B (zh) * 2018-01-26 2023-04-04 日清工程株式会社 铜微粒子
WO2019151141A1 (ja) * 2018-02-05 2019-08-08 富士フイルム株式会社 処理液、及び、処理方法
US10934484B2 (en) * 2018-03-09 2021-03-02 Versum Materials Us, Llc Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ germanium stack during manufacture of a semiconductor device
US11499236B2 (en) * 2018-03-16 2022-11-15 Versum Materials Us, Llc Etching solution for tungsten word line recess
KR102487940B1 (ko) * 2018-03-19 2023-01-16 삼성디스플레이 주식회사 식각액 조성물 및 이를 이용한 금속 패턴과 어레이 기판의 제조 방법
WO2019181045A1 (ja) * 2018-03-23 2019-09-26 株式会社 東芝 処理液及び処理方法
SG11202008828VA (en) 2018-03-28 2020-10-29 Fujifilm Electronic Materials Usa Inc Cleaning compositions
JP7105084B2 (ja) * 2018-03-30 2022-07-22 ナガセケムテックス株式会社 エッチング液組成物
SG11202008782WA (en) 2018-04-04 2020-10-29 Basf Se IMIDAZOLIDINETHIONE-CONTAINING COMPOSITIONS FOR POST-ASH RESIDUE REMOVAL AND/OR FOR OXIDATIVE ETCHING OF A LAYER OR MASK COMPRISING TiN
WO2019208685A1 (ja) * 2018-04-27 2019-10-31 三菱瓦斯化学株式会社 水性組成物及びこれを用いた洗浄方法
EP3787010B1 (en) * 2018-04-27 2024-04-10 Mitsubishi Gas Chemical Company, Inc. Aqueous cleaning composition and cleaning method using same
TWI808161B (zh) * 2018-04-27 2023-07-11 日商三菱瓦斯化學股份有限公司 水性組成物及使用此組成物之清洗方法
JP7144532B2 (ja) * 2018-05-01 2022-09-29 アプライド マテリアルズ インコーポレイテッド 選択的エッチングプロセスの選択性を高める方法
CN110484919A (zh) * 2018-05-14 2019-11-22 深圳市裕展精密科技有限公司 退镀液及其退除含钛膜层的方法、及表面形成有含钛膜层的基材的退镀方法
KR102346832B1 (ko) * 2018-05-23 2022-01-03 삼성에스디아이 주식회사 실리콘 질화막 식각용 조성물 및 이를 이용한 식각 방법
CN112384597A (zh) * 2018-07-06 2021-02-19 恩特格里斯公司 选择性蚀刻材料的改进
KR20240167944A (ko) 2018-07-20 2024-11-28 엔테그리스, 아이엔씨. 부식 억제제를 갖는 세정 조성물
CN109161358A (zh) * 2018-07-25 2019-01-08 佛山腾鲤新能源科技有限公司 一种导电胶的制备方法
US11017995B2 (en) * 2018-07-26 2021-05-25 Versum Materials Us, Llc Composition for TiN hard mask removal and etch residue cleaning
US11085011B2 (en) * 2018-08-28 2021-08-10 Entegris, Inc. Post CMP cleaning compositions for ceria particles
US12112959B2 (en) 2018-09-04 2024-10-08 Tokyo Electron Limited Processing systems and platforms for roughness reduction of materials using illuminated etch solutions
US10896824B2 (en) * 2018-12-14 2021-01-19 Tokyo Electron Limited Roughness reduction methods for materials using illuminated etch solutions
JP7269348B2 (ja) * 2018-12-14 2023-05-08 インテグリス・インコーポレーテッド ルテニウムエッチング組成物及び方法
WO2020123518A2 (en) * 2018-12-14 2020-06-18 Tokyo Electron Limited Processing systems and platforms for roughness reduction of materials using illuminated etch solutions
CN109594088A (zh) * 2018-12-29 2019-04-09 陕西宝成航空仪表有限责任公司 氮化钛或氮化铝钛膜层的退除液及制备方法和退除方法
CN113287187B (zh) * 2019-01-11 2024-12-03 弗萨姆材料美国有限责任公司 氧化铪腐蚀抑制剂
CN113454267A (zh) * 2019-01-31 2021-09-28 富士胶片电子材料美国有限公司 蚀刻组合物
KR20210125997A (ko) * 2019-02-13 2021-10-19 가부시끼가이샤 도꾸야마 차아염소산 이온, 및 pH 완충제를 함유하는 반도체 웨이퍼의 처리액
WO2020185762A1 (en) * 2019-03-11 2020-09-17 Versum Materials Us, Llc Etching solution and method for selectively removing silicon nitride during manufacture of a semiconductor device
US11929257B2 (en) 2019-03-11 2024-03-12 Versum Materials Us, Llc Etching solution and method for aluminum nitride
KR102930191B1 (ko) * 2019-03-14 2026-02-25 닛산 가가쿠 가부시키가이샤 세정제 조성물 및 세정 방법
MX2021012399A (es) 2019-04-12 2021-12-10 Ecolab Usa Inc Limpiador antimicrobiano multiuso y métodos de fabricación y uso de este.
JP7635158B2 (ja) 2019-05-23 2025-02-25 ビーエーエスエフ ソシエタス・ヨーロピア 低ｋ値の材料、銅、コバルト、および／またはタングステンの層が存在する状態で、ハードマスクおよび／またはエッチング停止層を選択的にエッチングするための組成物および方法
TWI856104B (zh) * 2019-06-03 2024-09-21 美商富士軟片電子材料美國股份有限公司 蝕刻組成物
TWI795572B (zh) * 2019-06-12 2023-03-11 關東鑫林科技股份有限公司 蝕刻組成物
JPWO2021005980A1 (enExample) * 2019-07-05 2021-01-14
KR102803330B1 (ko) * 2019-09-04 2025-05-07 에스케이이노베이션 주식회사 식각 조성물, 이를 이용한 절연막의 식각방법 및 반도체 소자의 제조방법
KR102869325B1 (ko) * 2019-09-10 2025-10-14 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 에칭 조성물
US11932590B2 (en) 2019-09-27 2024-03-19 Tokuyama Corporation Inhibitor for RuO4 gas generation and method for inhibiting RuO4 gas generation
TWI810469B (zh) 2019-09-27 2023-08-01 日商德山股份有限公司 釕的半導體用處理液及其製造方法
KR20210092472A (ko) 2020-01-16 2021-07-26 동우 화인켐 주식회사 몰리브데늄 식각액 조성물 및 이를 이용한 패턴 형성 방법
KR102787836B1 (ko) 2020-02-07 2025-03-31 동우 화인켐 주식회사 금속막 식각액 조성물 및 이를 이용한 패턴 형성 방법
AT16977U3 (de) * 2020-02-20 2021-03-15 4Tex Gmbh Verfahren zum Behandeln von Substraten mit Chemikalien
WO2021176913A1 (ja) * 2020-03-04 2021-09-10 富士フイルム株式会社 処理液、処理液収容体
US20240010915A1 (en) * 2020-03-04 2024-01-11 Versum Materials Us, Llc Etching Solution For Titanium Nitride And Molybdenum Conductive Metal Lines
CN113433807B (zh) * 2020-03-23 2024-08-09 上海新阳半导体材料股份有限公司 离子注入光刻胶清洗液、其制备方法及应用
CN113430066B (zh) * 2020-03-23 2024-04-19 上海新阳半导体材料股份有限公司 用于选择性移除硬遮罩的清洗组合物、其制备方法及应用
CN113430072B (zh) * 2020-03-23 2024-05-07 上海新阳半导体材料股份有限公司 移除硬遮罩的钴兼容性半水基清洗液、其制备方法及应用
KR102339685B1 (ko) * 2020-03-25 2021-12-16 주식회사 이엔에프테크놀로지 실리콘 질화막 식각 조성물
WO2021210458A1 (ja) * 2020-04-14 2021-10-21 三菱瓦斯化学株式会社 チタンおよび／またはチタン合金のエッチング液、該エッチング液を用いたチタンおよび／またはチタン合金のエッチング方法、および該エッチング液を用いた基板の製造方法
CN111430799B (zh) * 2020-04-22 2023-02-14 上海纳米技术及应用国家工程研究中心有限公司 一种用于镍锰酸锂正极材料的高压电解液
CN113667552A (zh) * 2020-05-15 2021-11-19 安集微电子科技（上海）股份有限公司 一种用于铜大马士革工艺的清洗液
CN111850564A (zh) * 2020-07-16 2020-10-30 桂林理工大学 一种钛化物膜层退镀液及退镀方法
US12195658B2 (en) 2020-08-07 2025-01-14 Tokuyama Corporation Treatment liquid for semiconductor wafers
TWI851915B (zh) * 2020-08-13 2024-08-11 美商恩特葛瑞斯股份有限公司 氮化物蝕刻劑組合物及方法
JP7739305B2 (ja) * 2020-09-04 2025-09-16 花王株式会社 基板の洗浄方法
KR102862941B1 (ko) * 2020-09-22 2025-09-22 동우 화인켐 주식회사 실리콘 식각액 조성물 및 이를 사용한 패턴 형성 방법
TWI824299B (zh) * 2020-09-22 2023-12-01 美商恩特葛瑞斯股份有限公司 蝕刻劑組合物
KR20230075433A (ko) * 2020-09-29 2023-05-31 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 반도체기판 세정용 조성물 및 세정방법
CN112540515B (zh) * 2020-12-16 2023-11-21 江苏艾森半导体材料股份有限公司 一种光刻胶去胶液及其制备方法和应用
KR20230171453A (ko) * 2021-04-16 2023-12-20 엔테그리스, 아이엔씨. 세정 조성물
CN113150884B (zh) * 2021-04-27 2022-12-30 上海新阳半导体材料股份有限公司 一种含氟清洗液组合物的制备方法
CN113186043B (zh) * 2021-04-27 2023-05-30 上海新阳半导体材料股份有限公司 一种含氟清洗液组合物及其应用
CN113161234B (zh) * 2021-04-27 2023-02-17 上海新阳半导体材料股份有限公司 一种含氟清洗液组合物的应用
KR20240006642A (ko) * 2021-05-12 2024-01-15 엔테그리스, 아이엔씨. 선택적 에칭제 조성물 및 방법
CN113549462A (zh) * 2021-06-16 2021-10-26 江阴润玛电子材料股份有限公司 一种微电子用超纯氟化铵蚀刻液及其制备方法
JP7744188B2 (ja) * 2021-09-16 2025-09-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7729988B2 (ja) * 2021-10-20 2025-08-26 インテグリス・インコーポレーテッド 選択的ウェットエッチング組成物および方法
CN114369462A (zh) * 2021-12-16 2022-04-19 湖北兴福电子材料有限公司 一种选择性蚀刻氮化钛及钨的蚀刻液
JP2025507176A (ja) * 2022-03-10 2025-03-13 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド エッチング組成物
TWI903068B (zh) 2022-04-20 2025-11-01 日商東京應化工業股份有限公司 蝕刻用組成物、使用其之蝕刻方法及電子零件之製造方法
CN115044376B (zh) * 2022-06-30 2023-12-29 湖北兴福电子材料股份有限公司 一种掺钪氮化铝蚀刻液及其应用
CN114989825B (zh) * 2022-06-30 2023-07-11 湖北兴福电子材料股份有限公司 一种掺钪氮化铝和钨的选择性蚀刻液
CN115011347B (zh) * 2022-06-30 2023-12-29 湖北兴福电子材料股份有限公司 一种氮化铝和钨的选择性蚀刻液
EP4550387A1 (en) 2022-07-01 2025-05-07 Mitsubishi Gas Chemical Company, Inc. Semiconductor substrate cleaning composition, method for cleaning semiconductor substrates, and method for producing semiconductor substrates
CN115710536B (zh) * 2022-11-11 2024-03-08 上海新阳半导体材料股份有限公司 一种清洗液的制备方法
CN115763494B (zh) * 2022-11-16 2025-02-14 Tcl华星光电技术有限公司 显示面板及其制作方法、蚀刻液组合物
CN116103657A (zh) * 2023-01-17 2023-05-12 中国科学院上海微系统与信息技术研究所 一种用于锗硒及其掺杂合金的化学机械抛光组合物
US20240271062A1 (en) * 2023-02-14 2024-08-15 Tokyo Ohka Kogyo Co., Ltd. Aqueous cleaning liquid
CN116948647B (zh) * 2023-06-29 2026-01-23 浙江奥首材料科技有限公司 一种氮化物半导体蚀刻液、其制备方法与用途
TW202534155A (zh) * 2023-09-21 2025-09-01 日商三菱瓦斯化學股份有限公司 組成物及套組、以及使用其之阻劑去除方法及電子基板之製造方法
CN119913513A (zh) * 2023-10-23 2025-05-02 安集微电子科技（上海）股份有限公司 一种蚀刻组合物及其用途
TW202546205A (zh) * 2023-12-13 2025-12-01 日商三菱瓦斯化學股份有限公司 半導體基板清洗用組成物、半導體基板之清洗方法、及半導體基板之製造方法
CN118185711A (zh) * 2024-02-28 2024-06-14 湖北兴福电子材料股份有限公司 一种铜钴钨兼容性好的TiN去除组合物
WO2025220432A1 (ja) * 2024-04-15 2025-10-23 東京応化工業株式会社 処理液、半導体基板の処理方法、及び半導体デバイスの製造方法
CN118814167A (zh) * 2024-06-24 2024-10-22 四川和晟达电子科技有限公司 一种用于铜钼结构的长寿命蚀刻液及其制备方法和蚀刻方法
CN118931541A (zh) * 2024-06-26 2024-11-12 湖北兴福电子材料股份有限公司 一种避免金属间电化学腐蚀效应的钨/氮化钛蚀刻液
CN119331621A (zh) * 2024-08-30 2025-01-21 湖北兴福电子材料股份有限公司 易于清洗的高选择性TiN清洗液
CN119614203B (zh) * 2024-11-25 2026-05-12 湖北兴福电子材料股份有限公司 一种选择性蚀刻氮化硅及氧化硅和氮化钛的蚀刻液

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201022148A (en) * 2008-10-02 2010-06-16 Advanced Tech Materials Use of surfactant/defoamer mixtures for enhanced metals loading and surface passivation of silicon substrates
WO2012048079A2 (en) * 2010-10-06 2012-04-12 Advanced Technology Materials, Inc. Composition and process for selectively etching metal nitrides

Family Cites Families (160)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE457647B (sv) 1987-06-24 1989-01-16 Eka Nobel Ab Saett vid blekning av material med ditionitloesning
US5209858A (en) 1991-02-06 1993-05-11 E. I. Du Pont De Nemours And Company Stabilization of choline and its derivatives against discoloration
US5320709A (en) 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
JPH11510219A (ja) 1995-12-19 1999-09-07 エフエスアイ インターナショナル インコーポレイテッド スプレー・プロセッサを用いる金属膜の無電解めっき
US5702075A (en) 1996-01-31 1997-12-30 David Lehrman Automatically collapsible support for an electrical cord for use with an ironing board
EP0810302B1 (en) * 1996-05-30 2001-08-01 Nalco Chemical Company Use of a mixture of surfactants for corrosion inhibiting
US7534752B2 (en) 1996-07-03 2009-05-19 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US6323168B1 (en) 1996-07-03 2001-11-27 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US6224785B1 (en) 1997-08-29 2001-05-01 Advanced Technology Materials, Inc. Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates
US6755989B2 (en) 1997-01-09 2004-06-29 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6896826B2 (en) 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US5993685A (en) 1997-04-02 1999-11-30 Advanced Technology Materials Planarization composition for removing metal films
US6322600B1 (en) 1997-04-23 2001-11-27 Advanced Technology Materials, Inc. Planarization compositions and methods for removing interlayer dielectric films
US5976928A (en) 1997-11-20 1999-11-02 Advanced Technology Materials, Inc. Chemical mechanical polishing of FeRAM capacitors
US6346741B1 (en) 1997-11-20 2002-02-12 Advanced Technology Materials, Inc. Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same
US6280651B1 (en) 1998-12-16 2001-08-28 Advanced Technology Materials, Inc. Selective silicon oxide etchant formulation including fluoride salt, chelating agent, and glycol solvent
US6211126B1 (en) 1997-12-23 2001-04-03 Advanced Technology Materials, Inc. Formulations including a 1, 3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates
CA2332390A1 (en) 1998-05-18 1999-11-25 Advanced Technology Materials, Inc. Stripping compositions for semiconductor substrates
US6875733B1 (en) 1998-10-14 2005-04-05 Advanced Technology Materials, Inc. Ammonium borate containing compositions for stripping residues from semiconductor substrates
US6395194B1 (en) 1998-12-18 2002-05-28 Intersurface Dynamics Inc. Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same
US6419554B2 (en) * 1999-06-24 2002-07-16 Micron Technology, Inc. Fixed abrasive chemical-mechanical planarization of titanium nitride
US6344432B1 (en) 1999-08-20 2002-02-05 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
US6439986B1 (en) 1999-10-12 2002-08-27 Hunatech Co., Ltd. Conditioner for polishing pad and method for manufacturing the same
JP2001135601A (ja) 1999-11-09 2001-05-18 Speedfam Co Ltd 半導体デバイス平坦化の研磨方法
US6723691B2 (en) 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6194366B1 (en) 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6492308B1 (en) 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
JP3515041B2 (ja) 2000-03-13 2004-04-05 沖電気工業株式会社 半導体素子の製造方法
US6409781B1 (en) 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
US6566315B2 (en) 2000-12-08 2003-05-20 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
JP2002231666A (ja) 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US6627587B2 (en) 2001-04-19 2003-09-30 Esc Inc. Cleaning compositions
US7029373B2 (en) 2001-08-14 2006-04-18 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6800218B2 (en) 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
US6802983B2 (en) 2001-09-17 2004-10-12 Advanced Technology Materials, Inc. Preparation of high performance silica slurry using a centrifuge
US7119418B2 (en) 2001-12-31 2006-10-10 Advanced Technology Materials, Inc. Supercritical fluid-assisted deposition of materials on semiconductor substrates
US7326673B2 (en) 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
US7030168B2 (en) 2001-12-31 2006-04-18 Advanced Technology Materials, Inc. Supercritical fluid-assisted deposition of materials on semiconductor substrates
US7557073B2 (en) 2001-12-31 2009-07-07 Advanced Technology Materials, Inc. Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist
US6773873B2 (en) 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
US7188644B2 (en) 2002-05-03 2007-03-13 Advanced Technology Materials, Inc. Apparatus and method for minimizing the generation of particles in ultrapure liquids
US6698619B2 (en) 2002-05-03 2004-03-02 Advanced Technology Materials, Inc. Returnable and reusable, bag-in-drum fluid storage and dispensing container system
US6849200B2 (en) 2002-07-23 2005-02-01 Advanced Technology Materials, Inc. Composition and process for wet stripping removal of sacrificial anti-reflective material
US6989358B2 (en) 2002-10-31 2006-01-24 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for removal of photoresists
US20060019850A1 (en) 2002-10-31 2006-01-26 Korzenski Michael B Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations
US7011716B2 (en) 2003-04-29 2006-03-14 Advanced Technology Materials, Inc. Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products
US7223352B2 (en) 2002-10-31 2007-05-29 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal
US7485611B2 (en) 2002-10-31 2009-02-03 Advanced Technology Materials, Inc. Supercritical fluid-based cleaning compositions and methods
US6943139B2 (en) 2002-10-31 2005-09-13 Advanced Technology Materials, Inc. Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations
US7300601B2 (en) 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US8236485B2 (en) 2002-12-20 2012-08-07 Advanced Technology Materials, Inc. Photoresist removal
US6735978B1 (en) 2003-02-11 2004-05-18 Advanced Technology Materials, Inc. Treatment of supercritical fluid utilized in semiconductor manufacturing applications
WO2004101222A2 (en) * 2003-05-12 2004-11-25 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for step-ii copper liner and other associated materials and method of using same
US7736405B2 (en) 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US7119052B2 (en) 2003-06-24 2006-10-10 Advanced Technology Materials, Inc. Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers
US20050025973A1 (en) 2003-07-25 2005-02-03 Slutz David E. CVD diamond-coated composite substrate containing a carbide-forming material and ceramic phases and method for making same
US7335239B2 (en) 2003-11-17 2008-02-26 Advanced Technology Materials, Inc. Chemical mechanical planarization pad
US20050118832A1 (en) 2003-12-01 2005-06-02 Korzenski Michael B. Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
CA2590325A1 (en) 2003-12-02 2005-06-23 Advanced Technology Materials, Inc. Resist, barc and gap fill material stripping chemical and method
US20050145311A1 (en) 2003-12-30 2005-07-07 Walker Elizabeth L. Method for monitoring surface treatment of copper containing devices
BRPI0418529A (pt) * 2004-02-11 2007-05-15 Mallinckrodt Baker Inc composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos
US7553803B2 (en) 2004-03-01 2009-06-30 Advanced Technology Materials, Inc. Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions
US8338087B2 (en) 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
US20050227482A1 (en) 2004-03-24 2005-10-13 Korzenski Michael B Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers
RU2007104939A (ru) 2004-07-09 2008-08-20 Акцо Нобель Н.В. (NL) Композиция, включающая гидроксид холина, и способ ее получения
JP4145273B2 (ja) 2004-07-14 2008-09-03 株式会社ノリタケスーパーアブレーシブ Ｃｍｐパッドコンディショナー
US20060063687A1 (en) 2004-09-17 2006-03-23 Minsek David W Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate
US20060148666A1 (en) 2004-12-30 2006-07-06 Advanced Technology Materials Inc. Aqueous cleaner with low metal etch rate
US20060154186A1 (en) 2005-01-07 2006-07-13 Advanced Technology Materials, Inc. Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
US7923423B2 (en) 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7365045B2 (en) 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
EP1866957A1 (en) * 2005-04-08 2007-12-19 Sachem, Inc. Selective wet etching of metal nitrides
WO2006110645A2 (en) 2005-04-11 2006-10-19 Advanced Technology Materials, Inc. Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices
WO2006113573A1 (en) 2005-04-15 2006-10-26 Advanced Technology Materials, Inc. Apparatus and method for supercritical fluid removal or deposition processes
US20070251551A1 (en) 2005-04-15 2007-11-01 Korzenski Michael B Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems
JP2008537343A (ja) 2005-04-15 2008-09-11 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド マイクロエレクトロニクスデバイスからイオン注入フォトレジスト層をクリーニングするための配合物
JP2008543060A (ja) 2005-05-26 2008-11-27 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅不活性化化学機械研磨後洗浄組成物及び使用方法
US20090215269A1 (en) 2005-06-06 2009-08-27 Advanced Technology Materials Inc. Integrated chemical mechanical polishing composition and process for single platen processing
CN101233456B (zh) 2005-06-07 2013-01-02 高级技术材料公司 金属和电介质相容的牺牲性抗反射涂层清洗及去除组合物
US20090212021A1 (en) 2005-06-13 2009-08-27 Advanced Technology Materials, Inc. Compositions and methods for selective removal of metal or metal alloy after metal silicide formation
TW200710205A (en) 2005-06-16 2007-03-16 Advanced Tech Materials Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers
WO2007019342A2 (en) 2005-08-05 2007-02-15 Advanced Technology Materials, Inc. High throughput chemical mechanical polishing composition for metal film planarization
KR100685738B1 (ko) 2005-08-08 2007-02-26 삼성전자주식회사 절연 물질 제거용 조성물, 이를 이용한 절연막의 제거 방법및 기판의 재생 방법
WO2007027522A2 (en) 2005-08-29 2007-03-08 Advanced Technology Materials, Inc. Composition and method for removing thick film photoresist
CN101496146A (zh) 2005-10-05 2009-07-29 高级技术材料公司 选择性蚀刻栅极隔片氧化物材料的组合物和方法
WO2007044446A1 (en) 2005-10-05 2007-04-19 Advanced Technology Materials, Inc. Oxidizing aqueous cleaner for the removal of post-etch residues
JP2009516360A (ja) 2005-10-13 2009-04-16 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 金属適合フォトレジスト及び／又は犠牲反射防止コーティング除去組成物
WO2007120259A2 (en) 2005-11-08 2007-10-25 Advanced Technology Materials, Inc. Formulations for removing copper-containing post-etch residue from microelectronic devices
CN101356629B (zh) 2005-11-09 2012-06-06 高级技术材料公司 用于将其上具有低k介电材料的半导体晶片再循环的组合物和方法
TW200734448A (en) 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
US20070225186A1 (en) 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
US20080076688A1 (en) 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
WO2008036823A2 (en) 2006-09-21 2008-03-27 Advanced Technology Materials, Inc. Uric acid additive for cleaning formulations
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
EP2082024A4 (en) 2006-09-25 2010-11-17 Advanced Tech Materials COMPOSITIONS AND METHODS FOR REMOVING A PHOTORESISTANT AGENT FOR RECYCLING A SILICON GALETTE
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
KR101449774B1 (ko) * 2006-12-21 2014-10-14 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 에칭 후 잔류물의 제거를 위한 액체 세정제
WO2008080096A2 (en) 2006-12-21 2008-07-03 Advanced Technology Materials, Inc. Compositions and methods for the selective removal of silicon nitride
JP2008177180A (ja) * 2007-01-16 2008-07-31 Ebara Corp 配線基板研磨用前処理液、研磨方法、配線基板製造方法及び配線基板製造装置
TW200916564A (en) 2007-01-31 2009-04-16 Advanced Tech Materials Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
KR101344541B1 (ko) * 2007-02-02 2013-12-26 동우 화인켐 주식회사 실리콘 산화막에 대한 선택적 에칭액 조성물
TWI516573B (zh) 2007-02-06 2016-01-11 安堤格里斯公司 選擇性移除ＴｉＳｉＮ之組成物及方法
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
TW200916183A (en) 2007-05-09 2009-04-16 Advanced Tech Materials Systems and methods for material blending and distribution
WO2008157345A2 (en) * 2007-06-13 2008-12-24 Advanced Technology Materials, Inc. Wafer reclamation compositions and methods
TW200916571A (en) 2007-08-02 2009-04-16 Advanced Tech Materials Non-fluoride containing composition for the removal of residue from a microelectronic device
EP2190967A4 (en) 2007-08-20 2010-10-13 Advanced Tech Materials COMPOSITION AND METHOD FOR REMOVING ION-IMPLANTED PHOTOLACK
JP2009075285A (ja) * 2007-09-20 2009-04-09 Fujifilm Corp 半導体デバイスの剥離液、及び、剥離方法
EP2227319A2 (en) 2007-11-14 2010-09-15 Advanced Technology Materials, Inc. Solvent-free synthesis of soluble nanocrystals
TW200934865A (en) 2007-11-30 2009-08-16 Advanced Tech Materials Formulations for cleaning memory device structures
JP2011517328A (ja) 2008-03-07 2011-06-02 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 非選択性酸化物エッチング湿式洗浄組成物および使用方法
US20090253072A1 (en) 2008-04-01 2009-10-08 Petruska Melissa A Nanoparticle reversible contrast enhancement material and method
US8026200B2 (en) 2008-05-01 2011-09-27 Advanced Technology Materials, Inc. Low pH mixtures for the removal of high density implanted resist
CN102216854A (zh) 2008-08-04 2011-10-12 高级技术材料公司 环境友好型聚合物剥离组合物
KR101752684B1 (ko) * 2008-10-21 2017-07-04 엔테그리스, 아이엔씨. 구리 세척 및 보호 조성물
SG2014005136A (en) 2009-01-28 2014-03-28 Advanced Tech Materials Lithographic tool in situ clean formulations
WO2010086745A1 (en) 2009-02-02 2010-08-05 Atmi Taiwan Co., Ltd. Method of etching lanthanum-containing oxide layers
WO2010091045A2 (en) 2009-02-05 2010-08-12 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of polymers and other organic material from a surface
US8754021B2 (en) 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
US8367555B2 (en) 2009-12-11 2013-02-05 International Business Machines Corporation Removal of masking material
SG182789A1 (en) 2010-01-29 2012-09-27 Advanced Tech Materials Cleaning agent for semiconductor provided with metal wiring
JP5858597B2 (ja) 2010-01-29 2016-02-10 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド タングステン配線半導体用洗浄剤
EP2558605A1 (en) 2010-04-15 2013-02-20 Advanced Technology Materials, Inc. Method for recycling of obsolete printed circuit boards
JP2012021151A (ja) 2010-06-16 2012-02-02 Sanyo Chem Ind Ltd 銅配線半導体用洗浄剤
CN103003923A (zh) * 2010-07-16 2013-03-27 高级技术材料公司 用于移除蚀刻后残余物的水性清洁剂
JP6101421B2 (ja) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
EP2606158A4 (en) 2010-08-20 2017-04-26 Entegris Inc. Sustainable process for reclaiming precious metals and base metals from e-waste
CN103081072A (zh) 2010-08-27 2013-05-01 高级技术材料公司 预防干燥期间高纵横比结构崩塌的方法
WO2012051380A2 (en) 2010-10-13 2012-04-19 Advanced Technology Materials, Inc. Composition for and method of suppressing titanium nitride corrosion
WO2012097143A2 (en) 2011-01-13 2012-07-19 Advanced Technology Materials, Inc. Formulations for the removal of particles generated by cerium- containing solutions
JP2012186470A (ja) 2011-02-18 2012-09-27 Sanyo Chem Ind Ltd 銅配線半導体用洗浄剤
WO2012154498A2 (en) 2011-05-06 2012-11-15 Advanced Technology Materials, Inc. Removal of metal impurities from silicon surfaces for solar cell and semiconductor applications
JP2012251026A (ja) 2011-05-31 2012-12-20 Sanyo Chem Ind Ltd 半導体用洗浄剤
TW201311869A (zh) 2011-06-16 2013-03-16 尖端科技材料公司 選擇性蝕刻氮化矽之組成物及方法
CN103620861B (zh) 2011-06-21 2017-02-15 恩特格里斯公司 从锂离子电池回收锂钴氧化物的方法
KR101776923B1 (ko) 2011-08-05 2017-09-11 삼성디스플레이 주식회사 식각액 조성물, 이를 이용한 금속 패턴의 형성 방법 및 표시 기판의 제조 방법
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅または銅合金用エッチング液
CN105869997A (zh) 2011-10-21 2016-08-17 安格斯公司 无胺cmp后组合物及其使用方法
US8618036B2 (en) 2011-11-14 2013-12-31 International Business Machines Corporation Aqueous cerium-containing solution having an extended bath lifetime for removing mask material
CN104024214A (zh) 2011-11-22 2014-09-03 塔明克公司 稳定的胆碱溶液及其制备方法
KR20140139131A (ko) 2011-12-15 2014-12-04 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 폐 전기 및 전자 장비의 재활용 동안 땜납 금속의 스트리핑을 위한 장치 및 방법
SG10201605172RA (en) 2011-12-28 2016-08-30 Entegris Inc Compositions and methods for selectively etching titanium nitride
SG11201404930SA (en) 2012-02-15 2014-09-26 Advanced Tech Materials Post-cmp removal using compositions and method of use
TWI592468B (zh) 2012-03-12 2017-07-21 恩特葛瑞斯股份有限公司 選擇性移除灰化旋塗玻璃之方法
WO2013138278A1 (en) 2012-03-12 2013-09-19 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
SG11201405737VA (en) 2012-03-18 2014-10-30 Entegris Inc Post-cmp formulation having improved barrier layer compatibility and cleaning performance
WO2013152260A1 (en) 2012-04-06 2013-10-10 Advanced Technology Materials, Inc. Removal of lead from solid materials
CN107325009B (zh) 2012-04-13 2022-03-18 亨斯迈石油化学有限责任公司 使用新颖的胺来稳定化季三烷基烷醇胺
US20130295712A1 (en) 2012-05-03 2013-11-07 Advanced Technology Materials, Inc. Methods of texturing surfaces for controlled reflection
KR102100254B1 (ko) 2012-05-11 2020-04-13 엔테그리스, 아이엔씨. 규소화물 제작 중의 NiPt 습식 에칭을 위한 배합물
WO2013173738A1 (en) 2012-05-18 2013-11-21 Advanced Technology Materials, Inc. Composition and process for stripping photoresist from a surface including titanium nitride
TW201404877A (zh) 2012-05-18 2014-02-01 尖端科技材料公司 用於改善有機殘餘物移除之具有低銅蝕刻速率之清潔水溶液
JP6063206B2 (ja) 2012-10-22 2017-01-18 富士フイルム株式会社 エッチング液、これを用いたエッチング方法及び半導体素子の製造方法
KR102118964B1 (ko) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
SG10201706443QA (en) 2013-03-04 2017-09-28 Entegris Inc Compositions and methods for selectively etching titanium nitride
EP2778158A1 (en) 2013-03-14 2014-09-17 Advanced Technology Materials, Inc. Sulfolane mixtures as ambient aprotic polar solvents
TW201500542A (zh) 2013-04-22 2015-01-01 先進科技材料公司 銅清洗及保護配方
US20160122696A1 (en) 2013-05-17 2016-05-05 Advanced Technology Materials, Inc. Compositions and methods for removing ceria particles from a surface
EP3004287B1 (en) 2013-06-06 2021-08-18 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
US20160362804A1 (en) 2014-02-25 2016-12-15 Entegris, Inc. Wet based formulations for the selective removal of noble metals

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201022148A (en) * 2008-10-02 2010-06-16 Advanced Tech Materials Use of surfactant/defoamer mixtures for enhanced metals loading and surface passivation of silicon substrates
WO2012048079A2 (en) * 2010-10-06 2012-04-12 Advanced Technology Materials, Inc. Composition and process for selectively etching metal nitrides

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